TWM387373U - Pixel structure - Google Patents

Pixel structure

Info

Publication number
TWM387373U
TWM387373U TW099200888U TW99200888U TWM387373U TW M387373 U TWM387373 U TW M387373U TW 099200888 U TW099200888 U TW 099200888U TW 99200888 U TW99200888 U TW 99200888U TW M387373 U TWM387373 U TW M387373U
Authority
TW
Taiwan
Prior art keywords
disposed
line
common
electrode
passivation layer
Prior art date
Application number
TW099200888U
Other languages
English (en)
Inventor
Meng-Chi Liou
Li-Hsuan Chen
Original Assignee
Chunghwa Picture Tubes Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chunghwa Picture Tubes Co filed Critical Chunghwa Picture Tubes Co
Priority to TW099200888U priority Critical patent/TWM387373U/zh
Priority to US12/732,183 priority patent/US8164094B2/en
Publication of TWM387373U publication Critical patent/TWM387373U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW099200888U 2010-01-15 2010-01-15 Pixel structure TWM387373U (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW099200888U TWM387373U (en) 2010-01-15 2010-01-15 Pixel structure
US12/732,183 US8164094B2 (en) 2010-01-15 2010-03-25 Pixel structure and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099200888U TWM387373U (en) 2010-01-15 2010-01-15 Pixel structure

Publications (1)

Publication Number Publication Date
TWM387373U true TWM387373U (en) 2010-08-21

Family

ID=44276924

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099200888U TWM387373U (en) 2010-01-15 2010-01-15 Pixel structure

Country Status (2)

Country Link
US (1) US8164094B2 (zh)
TW (1) TWM387373U (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417966B (zh) * 2011-05-19 2013-12-01 Chunghwa Picture Tubes Ltd 畫素結構的製作方法
TWI447495B (zh) * 2010-02-12 2014-08-01 Japan Display West Inc 具有減少撓曲電效應的液晶顯示器
TWI449004B (zh) * 2010-08-30 2014-08-11 Au Optronics Corp 畫素結構及其製造方法
TWI505004B (zh) * 2013-09-12 2015-10-21 Au Optronics Corp 畫素結構
TWI575577B (zh) * 2011-11-15 2017-03-21 友達光電股份有限公司 畫素結構及畫素結構的製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014021449A (ja) * 2012-07-23 2014-02-03 Panasonic Liquid Crystal Display Co Ltd 液晶表示装置、および液晶表示装置の製造方法
KR20140094880A (ko) 2013-01-23 2014-07-31 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
TWM462429U (zh) 2013-03-26 2013-09-21 Chunghwa Picture Tubes Ltd 面板整合掃描驅動電路的電容結構
CN104157613B (zh) 2014-07-31 2017-03-08 京东方科技集团股份有限公司 一种阵列基板的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3683463B2 (ja) * 1999-03-11 2005-08-17 シャープ株式会社 アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447495B (zh) * 2010-02-12 2014-08-01 Japan Display West Inc 具有減少撓曲電效應的液晶顯示器
TWI449004B (zh) * 2010-08-30 2014-08-11 Au Optronics Corp 畫素結構及其製造方法
TWI417966B (zh) * 2011-05-19 2013-12-01 Chunghwa Picture Tubes Ltd 畫素結構的製作方法
TWI575577B (zh) * 2011-11-15 2017-03-21 友達光電股份有限公司 畫素結構及畫素結構的製造方法
TWI505004B (zh) * 2013-09-12 2015-10-21 Au Optronics Corp 畫素結構
US9329440B2 (en) 2013-09-12 2016-05-03 Au Optronics Corporation Pixel structure

Also Published As

Publication number Publication date
US8164094B2 (en) 2012-04-24
US20110175093A1 (en) 2011-07-21

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Legal Events

Date Code Title Description
MK4K Expiration of patent term of a granted utility model