M3 66173 五、新型說明： 【新型所屬之技術領域】 本創作係有關於一種光感測元件之構造及其晶圓構 造，尤指一種晶圓級封裝之光感測元件構造及其晶圓構 造。 ^ 【先前技術】 請參閱第1圖，係習用光感測元件之剖面示意圖。如 _圖所示，其主要構造係將一感光晶片12設置於一電路板 14上，感光晶片12之輸入及輸出接點分別以導線121連 接至電路板14上。感光晶片12之外設有一殼體16將感 光晶片12罩於其中，並於感光晶片12上方位置設有一濾 光片18，藉以確保只有光感測元件10所設定之頻帶以内 的光波可進到光感測元件10中而被感測。 此一構造之光感測元件10雖可達到感測設定頻帶内 之光波的效果，然其構件繁多，體積較大，組裝所需工序 ®流程亦較複雜，容易影響生產良率，且製作成本較高。 - 【新型内容】 . 本創作之主要目的，在於提供一種晶圓級封裝之光感 測元件構造，其主要係將感光單元與濾光層分別製作而可 提高生產良率者。 本創作之次要目的，在於提供一種晶圓級封裝之光感 測元件構造，使用晶圓級封裝製作，可大幅縮小成品體積 3 M366173 者。 本創作之又一目的，在於提供一種晶圓級封裝之光感 測元件構造，利用直通矽晶穿孔之方式將銲墊設於矽基板 之背面，可進一步縮小成品體積者。 本創作之又一目的，在於提供一種晶圓級封裝之光感 測元件構造，其感光單元可選擇為光電晶體、光敏二極 體、互補金氧半電晶體及電荷耦元件，藉以適用於各種用 途。 本創作之又一目的，在於提供一種載有晶圓級封裝之 光感測元件之晶圓構造，其濾光層係於一玻璃基板上形 成，再與形成感光單元之矽基板結合，可提高生產良率者。 本創作之又一目的，在於提供一種載有晶圓級封裝之 光感測元件之晶圓構造，可於玻璃基板上開設複數個分割 槽，利於分割為光感測元件。 為達成上述目的，本創作提供一種晶圓級封裝之光感 測元件構造，包含有：一矽基板，其上表面形成有一感光 單元，並於對應該感光單元之輸入及輸出位置分別設置一 穿孔，各穿孔中分別填設有一導體；複數個銲墊，分別設 置於該矽基板下表面對應於各穿孔之位置；及一玻璃基 板，其上表面設有一濾光層，疊設於該矽基板上，形成該 光感測元件。 本創作尚提供一種載有晶圓級封裝之光感測元件之 晶圓構造，包含有：一矽基板，其上表面形成有複數個感 光單元，並於對應各感光單元之輸入及輸出位置分別設置 M366173 • 一穿孔，各穿孔中分別填設有一導體；複數個銲墊，分別 設置於該矽基板下表面對應於各穿孔之位置；一玻璃基 板，其上表面設有一濾光層，疊設於該矽基板上；及複數 個分割槽，開設於該玻璃基板上，藉以分隔各感光單元而 分別成為一光感測元件。 【實施方式】 請參閱第2圖至第4圖，係分別為本創作一較佳實施 •例之各步驟示意圖。如圖所示，本創作之製作流程主要係 先提供一矽基板22，並於該矽基板22之上表面依需求形 成複數個感光單元221。之後由矽基板22之下表面對應於 各感光單元221輸入及輸出之位置分別設置一穿孔225， 並分別於各穿孔225中分別填入一導體227。而矽基板22 之下表面對應於各穿孔225之位置再分別形成一銲墊 229，如第2圖之下部所示。 另提供一玻璃基板24，並於玻璃基板24之上表面或 馨下表面依需求形成一濾光層241，再於玻璃基板24之下表 面塗佈一接合層243 ’如第2圖之上部所示，圖中係以遽 光層241形成於玻璃基板24上表面為例進行說明。 石夕基板22之感光單元221部分及坡璃基板％之遽光 層241分別完成後，即可將玻璃基板24與梦基板22以接 合層243結合，將感光單元221包覆於其中。 疊合完成後’即可進行切割’將各光感測元件加以分 離’亦可先由玻璃基板24上表面形成複數個分割槽32後 5 M366173 再進行切割分離，如第3圖所示。 本創作之光感測元件尚可於各感光單元221完成後， 在矽基板22之上表面形成一保護層223,藉以覆蓋各感光 單元221與矽基板22之上表面。除了具有保護感光單元 221之功能外，尚可達到使表面平整，利於與玻璃基板24 結合的效果，如第2圖所示。 其中’感光單元221可依需求而製作為光電晶體 (photo transistor)、光敏二極體（photo diode)、互補 金氧半（complementary metal oxide semiconductor, CMOS)電晶體、及電荷耗合元件（charge coupled device， CCD)等。濾光層241可製作成帶通濾光層（band pass f i 1 ter) ’依據设定之規格而只令預定頻帶内之光波通過。 根據設定頻帶之不同，可將光感測器製作成色光感測 器（color detector)，用以偵測紅、綠、藍等各色光。亦 可製作成白光感測器，亦即可見光感测器，可用以感測週 另外’亦可依需求製作為紅外光感 測器、紫外光感測器等等。 各牙孔225除了以钱刻後鑛上金屬或 亦可使用直通碎晶穿孔（thrQUgh silieGn via，Tsy)之方 式製作，可免除打線接合所需之空間，且具有較佳之電性 表現。 請參閱第4圖，係本創作—較佳實施例之剖面示意 圖。如圖所示’本創作之光感測元件4〇係、由第3圖所示 晶圓分割後所得。 M366173 其主要構造係包含有一矽基板22，並於矽基板22之 上表面形成一感光單元221。該感光單元221可依需求為 一光電晶體、光敏二極體、互補金氧半電晶體、及電荷耦 合元件之其中之一。 該矽基板22對應於感光單元221之輸入及輸出位置 分別設有一穿孔225,各穿孔225中分別填入一導體227， 藉以與感光單元221之輸入與輸出導通。矽基板22之下 '表面對應於各穿孔225之位置則分別形成一銲墊229。 _ 另包含有一玻璃基板24，並於該玻璃基板24之上表 面形成一濾光層241，藉由帶通濾波的形式而可過濾設定 頻帶以外的光波，防止不需要的干擾。 將玻璃基板24與矽基板22結合後，即可完成光感測 元件40之製作。 本創作藉由矽基板22與玻璃基板24分別製作的方 式，可於感光單元221及濾光層241完成以後分別進行電 性及光學特性的檢測。檢測無誤後再加以結合，可提高產 •品的生產良率。若檢測有問題，亦可明確分辨哪一部分的 製程有問題而需修正。另可於感光單元221上覆蓋一保護 層223，可防止感光單元221在製作過程中意外毀損，並 可延長感光单元221之使用哥命。 • 由於本創作之光感測元件40係為晶圓級封裝構造， 元件之空間利用率極高，而產品之體積極小。且可藉由銲 墊229將光感測元件40與一電路板結合.，而與銲墊229 相對的元件表面，即為元件的受光感測面，無需額外設置 7 M366173 殼體與濾光片，其應用層面亦較為廣泛。 以上所述者，僅為本創作之一較佳實施例而已，並非 用來限定本創作實施之範圍，即凡依本創作申請專利範圍 所述之形狀、構造、特徵及精神所為之均等變化與修飾， 均應包括於本創作之申請專利範圍内。 【圖式簡單說明】 第1圖：係習用光感測元件之剖面示意圖。 第2圖至第4圖：係本創作一較佳實施例之各步驟剖面示意 圖。 【主要元件符號說明】 10 光感測元件 12 感光晶片 121 導線 14 電路板 16 殼體 18 濾光片 22 矽基板 221 感光單元 223 保護層 225 穿孔 227 導體 229 銲墊 24 玻璃基板 241 濾光層 243 接合層 32 分割槽 40 光感測元件M3 66173 V. New Description: [New Technology Area] This creation is about the structure of a light sensing device and its wafer structure, especially the structure of a light sensing device in a wafer level package and its wafer structure. . ^ [Prior Art] Please refer to Figure 1 for a schematic cross-sectional view of a conventional light sensing device. As shown in the figure, the main structure is to mount a photosensitive wafer 12 on a circuit board 14, and the input and output contacts of the photosensitive wafer 12 are connected to the circuit board 14 by wires 121, respectively. A photoreceptor wafer 12 is disposed outside the photoreceptor wafer 12 to cover the photoreceptor wafer 12, and a filter 18 is disposed above the photoreceptor wafer 12 to ensure that only light waves within the frequency band set by the photo sensing element 10 can enter. The light sensing element 10 is sensed. Although the light sensing element 10 of the structure can achieve the effect of sensing the light wave in the set frequency band, the component is large in size and large in volume, and the process required for assembly is complicated, which easily affects the production yield and the manufacturing cost. Higher. - [New Content] The main purpose of this creation is to provide a light-sensing element structure for wafer-level packaging, which is mainly used to separately produce a photosensitive unit and a filter layer to improve production yield. The second objective of this creation is to provide a wafer-level packaged light sensing device structure that can be fabricated in a wafer-level package to significantly reduce the finished product volume of 3 M366173. Another object of the present invention is to provide a photo-sensing element structure of a wafer-level package, which is provided on the back surface of the ruthenium substrate by means of through-silicone perforation, thereby further reducing the volume of the finished product. Another object of the present invention is to provide a photo-sensing component structure of a wafer-level package, wherein the photosensitive unit can be selected from a photo-crystal, a photodiode, a complementary MOS transistor, and a charge-coupled component, thereby being applicable to various types. use. Another object of the present invention is to provide a wafer structure carrying a wafer-level packaged light sensing element, wherein the filter layer is formed on a glass substrate and combined with a germanium substrate forming a photosensitive unit to improve Produce yield. Another object of the present invention is to provide a wafer structure carrying a wafer-level packaged light sensing device, which can be provided with a plurality of dividing grooves on the glass substrate to facilitate division into light sensing elements. In order to achieve the above object, the present invention provides a wafer level package optical sensing device structure, comprising: a substrate, a photosensitive unit is formed on the upper surface thereof, and a perforation is respectively disposed at the input and output positions corresponding to the photosensitive unit. Each of the perforations is respectively filled with a conductor; a plurality of pads are respectively disposed on the lower surface of the crucible substrate corresponding to the positions of the perforations; and a glass substrate having a filter layer disposed on the upper surface thereof, stacked on the crucible substrate The light sensing element is formed. The present invention also provides a wafer structure carrying a wafer-level packaged light sensing device, comprising: a substrate having a plurality of photosensitive cells formed on an upper surface thereof, and corresponding to input and output positions of the respective photosensitive cells M366173 is provided. A perforation is filled in each of the perforations; a plurality of pads are respectively disposed on the lower surface of the crucible substrate corresponding to the positions of the perforations; and a glass substrate is provided with a filter layer on the upper surface thereof. And the plurality of dividing grooves are formed on the glass substrate, thereby separating the photosensitive cells to form a light sensing element. [Embodiment] Please refer to Fig. 2 to Fig. 4, which are schematic diagrams of the steps of a preferred embodiment of the present invention. As shown in the figure, the manufacturing process of the present invention mainly provides a substrate 22, and a plurality of photosensitive cells 221 are formed on the upper surface of the substrate 22 as required. Then, a through hole 225 is respectively disposed at a position corresponding to the input and output of each photosensitive unit 221 on the lower surface of the substrate 22, and a conductor 227 is respectively filled in each of the through holes 225. The lower surface of the substrate 22 corresponds to the position of each of the through holes 225 to form a pad 229, as shown in the lower portion of Fig. 2. Further, a glass substrate 24 is provided, and a filter layer 241 is formed on the upper surface or the lower surface of the glass substrate 24 as needed, and a bonding layer 243 is applied on the lower surface of the glass substrate 24 as shown in the upper part of FIG. In the figure, the case where the calender layer 241 is formed on the upper surface of the glass substrate 24 will be described as an example. After the photosensitive unit 221 portion of the Shishi substrate 22 and the phosphor layer 241 of the glass substrate % are respectively completed, the glass substrate 24 and the dream substrate 22 can be bonded to the bonding layer 243, and the photosensitive unit 221 can be covered therein. After the lamination is completed, the cutting can be performed to separate the respective photo sensing elements. Alternatively, a plurality of dividing grooves 32 may be formed on the upper surface of the glass substrate 24, and then cut and separated by 5 M366173, as shown in Fig. 3. The light sensing element of the present invention can be formed on the upper surface of the ruthenium substrate 22 after the photosensitive cells 221 are completed, thereby covering the upper surfaces of the photosensitive cells 221 and the ruthenium substrate 22. In addition to the function of protecting the photosensitive unit 221, the surface is flattened to facilitate the bonding with the glass substrate 24, as shown in Fig. 2. The photosensitive unit 221 can be fabricated as a photo transistor, a photo diode, a complementary metal oxide semiconductor (CMOS) transistor, and a charge coupled component (charge coupled device). Device, CCD), etc. The filter layer 241 can be formed as a band pass filter to pass only light waves in a predetermined frequency band according to the set specifications. Depending on the set frequency band, the photo sensor can be made into a color detector to detect red, green, and blue light. It can also be made into a white light sensor, that is, a visible light sensor, which can be used to sense the circumference of the other. It can also be made into an infrared light sensor, an ultraviolet light sensor and the like according to requirements. Each of the dental apertures 225 can be made of a metal or a through-the-hole perforation (TRY), which eliminates the space required for wire bonding and has better electrical performance. Referring to Figure 4, there is shown a schematic cross-sectional view of a preferred embodiment. As shown in the figure, the light sensing element 4 of the present invention is obtained by dividing the wafer shown in Fig. 3. The main structure of the M366173 includes a substrate 22, and a photosensitive unit 221 is formed on the upper surface of the substrate 22. The photosensitive unit 221 can be one of a photoelectric crystal, a photosensitive diode, a complementary MOS transistor, and a charge coupled device as needed. The cymbal substrate 22 is respectively provided with a through hole 225 corresponding to the input and output positions of the photosensitive unit 221, and each of the through holes 225 is filled with a conductor 227 to be electrically connected to the input and output of the photosensitive unit 221. Below the substrate 22, the surface corresponds to the position of each of the through holes 225 to form a pad 229, respectively. Further, a glass substrate 24 is included, and a filter layer 241 is formed on the surface of the glass substrate 24 to filter out light waves outside the set frequency band by band pass filtering to prevent unnecessary interference. After the glass substrate 24 is bonded to the ruthenium substrate 22, the fabrication of the light sensing element 40 can be completed. This creation can be performed by detecting the electrical and optical characteristics of the photosensitive unit 221 and the filter layer 241, respectively, by the method of forming the substrate 22 and the glass substrate 24, respectively. After the test is correct, it can be combined to improve the production yield of the product. If there is a problem with the test, it is also possible to clearly identify which part of the process has a problem and need to be corrected. Further, a protective layer 223 may be disposed on the photosensitive unit 221 to prevent the photosensitive unit 221 from being accidentally damaged during the manufacturing process, and to extend the use of the photosensitive unit 221. • Since the photo-sensing component 40 of the present invention is a wafer-level package structure, the space utilization of the component is extremely high, and the product body is actively small. The photo sensing element 40 can be combined with a circuit board by the solder pad 229. The surface of the component opposite to the solder pad 229 is the light receiving surface of the component, and no additional arrangement is required. 7 M366173 housing and filter Its application level is also extensive. The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the shape, structure, characteristics and spirit described in the scope of the patent application are equally changed. Modifications shall be included in the scope of the patent application of this creation. [Simple description of the drawing] Fig. 1 is a schematic cross-sectional view of a conventional light sensing element. 2 to 4 are schematic cross-sectional views showing the steps of a preferred embodiment of the present invention. [Main component symbol description] 10 Light sensing element 12 Photosensitive wafer 121 Conductor 14 Circuit board 16 Housing 18 Filter 22 矽 Substrate 221 Photosensitive unit 223 Protective layer 225 Perforation 227 Conductor 229 Pad 24 Glass substrate 241 Filter layer 243 Bonding layer 32 dividing groove 40 light sensing element