201042755 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種光感測元件之構造、晶圓構造及 其製作方法，尤指一種晶圓級封裝之光感測元件構造、晶 圓構造及其製作方法。 【先前技術】 〇 印參閱第1圖，係習用光感測元件之剖面示意圖。如 圖所不’其主要構造係將一感光晶片12設置於一電路板14 上，感光晶片12之輸入及輸出接點分別以導線121連接至 電路板14上。感光晶片12之外設有一殼體16將感光晶片 12罩於其中，並於感光晶片a上方位置設有一濾光片18, 藉以確保只有光感測元件1Q所設定之頻帶以㈣光波可進 到光感測元件10中而被感測。 此構造之光感測疋件10雖可達到感測設定頻帶内之 〇光波的效果，然其構件繁多，體積較大，組裝所需工序流 程亦較複雜，容易影響生產良率，且製作成本較高。 【發明内容】 本發明之主要目的，在於提供一種晶圓級封裝之光感 =件構造，其主要係將感光單元與渡光層分別製作而可 &局生產良率者。 本發明之次要目的，在於提供一種晶圓級封裝之光感 3 201042755 可大幅縮小成品體積 測元件構造，使用晶圓級封裝製作 者。 本發明之又-目的，在於提供一種晶圓級封裝之 測元件構造’利用直财晶穿孔之方式將銲整設於石夕基二 之背面，可進一步縮小成品體積者。 土 …本發明之又-目的，在於提供—種晶圓級封裝之光 測7L件構造’其感光單元可選擇為光電晶體、光敏二極體、 互補金氧半電晶體及電㈣元件’藉以適用於各種用途。 本發明之又-目的，在於提供—種載有日日日圓級封裝之 光感測s件之晶圓構造，其濾光層係於-玻璃基板上形 成，再與形成感光單元之矽基板結合，可提高生產良率者。 、、本發明之又-目的，在於提供—種載有日日日圓級封裝之 光感測7G件之晶圓構造，可於玻璃基板上開 槽，利於分割為光感測元件。 刀」 t發明之又-目的，在於提供—種晶圓級封裝之光感 :…之製作方法，其主要係分別製作感光單元及濾光 3，可分別檢測而提高生產良率者。 ^發明之又—目的’在於提供—種晶圓級封裂之光感 2之製作方法，利用直通々晶穿孔將銲墊設置於石夕基 反面，可縮小元件體積並利於應用裝配者。 :達成上述目# ’本發明提供—種晶圓級封裝之光感 單構造，包含有：一石夕基板，其上表面形成有-感光 並於對應該感光單元之輸人及輸出位置分別設置一 各穿孔中分別填設有一導體；複數個銲墊，分別設 201042755 置於該矽基板下表面對應於各穿孔之位置；及一玻璃基 板，其上表面設有一濾光層，疊設於該矽基板上，形成該 光感測元件。 本發明尚提供一種載有晶圓級封裝之光感測元件之晶 圓構造，包含有：一矽基板，其上表面形成有複數個感光 單元，並於對應各感光單元之輸入及輸出位置分別設置一 穿孔，各穿孔中分別填設有一導體；複數個銲墊，分別設 置於該矽基板下表面對應於各穿孔之位置；一玻璃基板， 〇其上表面設有一濾光層，疊設於該矽基板上；及複數個分 割槽，開設於該玻璃基板上，藉以分隔各感光單元而分別 成為一光感測元件。 本發明尚提供一種晶圓級封裝之光感測元件之製作 方法，其主要係包含有下列步驟：提供一矽基板，並於該 矽基板之上表面形成複數個感光單元；於該矽基板下表面 對應於各感光單元之輸入及輸出位置分別蝕刻形成複數 個穿孔；於各穿孔中分別填入一導體；於各穿孔外分別形 〇 成一銲墊；提供一玻璃基板，並於該玻璃基板之上表面形 成一濾光層；將該玻璃基板之下表面結合於該矽基板之上 表面；及切割以形成各光感測元件。 【實施方式】 請參閱第2圖至第4圖，係分別為本發明一較佳實施 例之各步驟示意圖。如圖所示，本發明之製作流程主要係 先提供一矽基板22,並於該矽基板22之上表面依需求形成 201042755 複數個感光單元221。之後由矽基板22之下表面對應於各 感光單元221輸入及輸出之位置分別設置一穿孔225,並分 別於各穿孔225中分別填入一導體227。而矽基板22之下 表面對應於各穿孔225之位置再分別形成一銲墊229,如第 2圖之下部所示。 另提供一玻璃基板24,並於玻璃基板24之上表面或下 表面依需求形成一濾光層241，再於玻璃基板24之下表面 塗佈一接合層243’如第2圖之上部所示，圖中係以濾光層 241形成於玻璃基板24上表面為例進行說明。 矽基板22之感光單元221部分及玻璃基板24之濾光 層241分別完成後，即可將玻璃基板24與矽基板22以接 合層243結合，將感光單元221包覆於其中。 疊合完成後，即可進行切割，將各光感測元件加以分 離，亦可先由玻璃基板24上表面形成複數個分割槽32後 再進行切割分離，如第3圖所示。 本發明之光感測元件尚可於各感光單元221完成後， 在矽基板22之上表面形成一保護層223，藉以覆蓋各感光 單元221與矽基板22之上表面。除了具有保護感光單元221 之功能外，尚可達到使表面平整，利於與玻璃基板24結合 的效果，如第2圖所示。 其中，感光單元221可依需求而製作為光電晶體（photo transistor)、光敏二極體（photo diode)、互補金氧半 (complementary metal oxide semiconductor, CMOS)電晶 體、及電荷耗合元件（charge coupled device, CCD)等。 201042755 濾光層241可製作成帶通濾光層（band pass filter)，依 據設定之規格而只令預定頻帶内之光波通過。 根據設定頻帶之不同，可將光感測器製作成色光感測 器（color detector)，用以偵測紅、綠、藍等各色光。亦 可製作成白光感測器，亦即可見光感測器，可用以感測週 圍環境之光線亮度等。另外，亦可依需求製作為紅外光感 測器、紫外光感測器等等。 各穿孔225除了以蝕刻後鍍上金屬或導體製作之外， Ο 亦可使用直通石夕晶穿孔（through silicon via, TSV)之方 式製作，可免除打線接合所需之空間，且具有較佳之電性 表現。 請參閱第4圖，係發明一較佳實施例之剖面示意圖。 如圖所示，本發明之光感測元件40係由第3圖所示晶圓分 割後所得。 其主要構造係包含有一矽基板22,並於矽基板22之上 表面形成一感光單元221。該感光單元221可依需求為一光 〇 電晶體、光敏二極體、互補金氧半電晶體、及電荷耦合元 件之其中之一。 該矽基板22對應於感光單元221之輸入及輸出位置分 別設有一穿孔225，各穿孔225中分別填入一導體227，藉 以與感光單元221之輸入與輸出導通。矽基板22之下表面 對應於各穿孔225之位置則分別形成一銲墊229。 另包含有一玻璃基板24,並於該玻璃基板24之上表面 形成一濾光層241，藉由帶通濾波的形式而可過濾設定頻帶 201042755 以外的光波，防止不需要的干擾。 將玻璃基板24與矽基板22結合後，即可完成光感測 元件40之製作。 本發明藉由矽基板22與玻璃基板24分別製作的方 式，可於感光單元221及濾光層241完成以後分別進行電 性及光學特性的檢測。檢測無誤後再加以結合，可提高產 品的生產良率。若檢測有問題，亦可明確分辨哪一部分的 製程有問題而需修正。另可於感光單元221上覆蓋一保護 層223,可防止感光單元221在製作過程中意外毀損，並可 延長感光單元221之使用壽命。 由於本發明之光感測元件40係為晶圓級封裝構造，元 件之空間利用率極高，而產品之體積極小。且可藉由銲墊 229將光感測元件40與一電路板結合，而與銲墊229相對 的元件表面，即為元件的受光感測面，無需額外設置殼體 與濾光片，其應用層面亦較為廣泛。 以上所述者，僅為本發明之一較佳實施例而已，並非 用來限定本發明實施之範圍，即凡依本發明申請專利範圍 所述之形狀、構造、特徵、方法及精神所為之均等變化與 修飾，均應包括於本發明之申請專利範圍内。 【圖式簡單說明】 第1圖：係習用光感測元件之剖面示意圖。 第2圖至第4圖：係本發明一較佳實施例之各步驟剖面示 意圖。 8 201042755 【主要元件符號說明】 10 光感測元件 12 感光晶片 121 導線 14 電路板 16 殼體 18 濾光片 22 矽基板 221 感光單元 223 保護層 225 穿孔 227 導體 229 銲墊 24 玻璃基板 241 濾光層 243 接合層 32 分割槽 40 光感測元件201042755 VI. Description of the Invention: [Technical Field] The present invention relates to a structure of a light sensing element, a wafer structure, and a method of fabricating the same, and more particularly to a wafer level package optical sensing device structure, wafer Construction and how to make it. [Prior Art] Referring to Fig. 1, a cross-sectional view of a conventional light sensing element is shown. As shown in the figure, the main structure is to mount a photosensitive wafer 12 on a circuit board 14, and the input and output contacts of the photosensitive wafer 12 are connected to the circuit board 14 by wires 121, respectively. A photoreceptor wafer 12 is disposed outside the photosensitive wafer 12 to cover the photosensitive wafer 12, and a filter 18 is disposed above the photosensitive wafer a to ensure that only the frequency band set by the photo sensing element 1Q can be accessed by (4) light waves. The light sensing element 10 is sensed. Although the light sensing element 10 of the structure can achieve the effect of sensing the light wave in the set frequency band, the component has a large number of components and a large volume, and the process flow required for assembly is complicated, which easily affects the production yield and the manufacturing cost. Higher. SUMMARY OF THE INVENTION The main object of the present invention is to provide a photo-sensing structure of a wafer-level package, which is mainly composed of a photosensitive unit and a light-passing layer, and can produce a yield. A secondary object of the present invention is to provide a light perception of a wafer level package. 3 201042755 can significantly reduce the size of the finished bulk component and use wafer level package makers. Still another object of the present invention is to provide a wafer-level package measuring device structure that is formed by direct-cutting through the back of the stone base, thereby further reducing the finished product volume. The invention is also to provide a photo-sensing 7L piece structure of a wafer level package. The photosensitive unit can be selected from a photo-crystal, a photodiode, a complementary MOS transistor and an electric (four) device. Suitable for a variety of uses. A further object of the present invention is to provide a wafer structure carrying a light sensing component of a daily-day package, the filter layer being formed on a glass substrate and then bonded to a germanium substrate forming a photosensitive unit. Can increase production yield. Further, another object of the present invention is to provide a wafer structure of a light sensing 7G device carrying a day-day-day package, which can be grooved on a glass substrate to facilitate division into light sensing elements. The purpose of the invention is to provide a method for fabricating the light perception of a wafer-level package, which is mainly for fabricating a photosensitive unit and a filter 3, respectively, which can be separately detected to improve production yield. The invention again aims to provide a method for fabricating a wafer-level cracking light perception. The use of a through-twisting perforation to place the pad on the opposite side of the stone base can reduce the component volume and facilitate the application of the assembler. The invention provides a light-sensing single structure of a wafer-level package, comprising: a stone substrate, the upper surface of which is formed with a photosensitive light and respectively disposed at a position corresponding to the input and output of the photosensitive unit; Each of the perforations is respectively filled with a conductor; a plurality of pads are respectively disposed at 201042755, and a lower surface of the crucible substrate is disposed corresponding to each of the perforations; and a glass substrate having a filter layer disposed on the upper surface thereof The light sensing element is formed on the substrate. The present invention further provides a wafer structure of a photo-sensing device carrying a wafer-level package, comprising: a substrate having a plurality of photosensitive cells formed on an upper surface thereof and respectively corresponding to input and output positions of the respective photosensitive cells a perforation is provided, wherein each of the perforations is respectively filled with a conductor; a plurality of pads are respectively disposed on the lower surface of the crucible substrate corresponding to the positions of the perforations; a glass substrate having a filter layer disposed on the upper surface thereof The plurality of dividing grooves are formed on the substrate, and the plurality of dividing grooves are formed on the glass substrate to separate the photosensitive cells to form a light sensing element. The invention further provides a method for fabricating a photo-sensing component of a wafer-level package, which mainly comprises the steps of: providing a substrate, and forming a plurality of photosensitive cells on the surface of the substrate; under the substrate The surface is respectively etched to form a plurality of perforations corresponding to the input and output positions of the photosensitive cells; a conductor is respectively filled in each of the perforations; and a pad is formed separately from each of the perforations; a glass substrate is provided, and the glass substrate is provided Forming a filter layer on the upper surface; bonding the lower surface of the glass substrate to the upper surface of the germanium substrate; and cutting to form each of the light sensing elements. [Embodiment] Please refer to Figures 2 to 4, which are schematic views of the steps of a preferred embodiment of the present invention. As shown in the figure, the manufacturing process of the present invention mainly provides a substrate 22, and a plurality of photosensitive cells 221 of 201042755 are formed on the upper surface of the substrate 22 as needed. Then, a through hole 225 is respectively disposed at a position corresponding to the input and output of each photosensitive unit 221 on the lower surface of the substrate 22, and a conductor 227 is respectively filled in each of the through holes 225. The lower surface of the substrate 22 corresponds to the position of each of the through holes 225 to form a pad 229, as shown in the lower portion of Fig. 2. A glass substrate 24 is further provided, and a filter layer 241 is formed on the upper surface or the lower surface of the glass substrate 24 as needed, and a bonding layer 243' is coated on the lower surface of the glass substrate 24 as shown in the upper part of FIG. In the figure, the filter layer 241 is formed on the upper surface of the glass substrate 24 as an example. After the photosensitive unit 221 portion of the ruthenium substrate 22 and the filter layer 241 of the glass substrate 24 are respectively completed, the glass substrate 24 and the ruthenium substrate 22 can be bonded to the bonding layer 243, and the photosensitive unit 221 can be covered therein. After the lamination is completed, the cutting can be performed to separate the respective photo sensing elements, or a plurality of dividing grooves 32 can be formed on the upper surface of the glass substrate 24, and then cut and separated, as shown in Fig. 3. The light sensing element of the present invention can form a protective layer 223 on the upper surface of the germanium substrate 22 after the photosensitive cells 221 are completed, thereby covering the upper surfaces of the photosensitive cells 221 and the germanium substrate 22. In addition to the function of protecting the photosensitive unit 221, the surface is flattened to facilitate the bonding with the glass substrate 24, as shown in Fig. 2. The photosensitive unit 221 can be fabricated as a photo transistor, a photo diode, a complementary metal oxide semiconductor (CMOS) transistor, and a charge coupled component (charge coupled device). Device, CCD), etc. 201042755 The filter layer 241 can be formed as a band pass filter to pass only light waves in a predetermined frequency band according to the set specifications. Depending on the set frequency band, the photo sensor can be made into a color detector to detect red, green, and blue light. It can also be made into a white light sensor, also known as a visible light sensor, which can be used to sense the brightness of the surrounding environment. In addition, it can also be made into an infrared sensor, an ultraviolet sensor, etc. as required. Each of the through holes 225 is made of metal or a conductor after etching, and can also be fabricated by using through silicon via (TSV), which eliminates the space required for wire bonding and has better electric power. Sexual performance. Referring to Figure 4, there is shown a cross-sectional view of a preferred embodiment of the invention. As shown, the light sensing element 40 of the present invention is obtained by dividing the wafer shown in Fig. 3. The main structure comprises a substrate 22, and a photosensitive unit 221 is formed on the upper surface of the substrate 22. The photosensitive unit 221 can be one of a photo transistor, a photodiode, a complementary MOS transistor, and a charge coupled device as needed. The cymbal substrate 22 is provided with a through hole 225 corresponding to the input and output positions of the photosensitive unit 221, and each of the through holes 225 is filled with a conductor 227 to be electrically connected to the input and output of the photosensitive unit 221. A pad 229 is formed on the lower surface of the substrate 22 corresponding to the positions of the respective vias 225. Further, a glass substrate 24 is included, and a filter layer 241 is formed on the upper surface of the glass substrate 24. The band-pass filtered form can filter light waves outside the set frequency band 201042755 to prevent unnecessary interference. After the glass substrate 24 is bonded to the ruthenium substrate 22, the fabrication of the light sensing element 40 can be completed. According to the present invention, the electrical and optical properties can be detected after completion of the photosensitive unit 221 and the filter layer 241 by the method of forming the substrate 22 and the glass substrate 24, respectively. After the detection is correct, it can be combined to improve the production yield of the product. If there is a problem with the test, it is also possible to clearly identify which part of the process has a problem and need to be corrected. Further, a protective layer 223 may be disposed on the photosensitive unit 221 to prevent the photosensitive unit 221 from being accidentally damaged during the manufacturing process, and the life of the photosensitive unit 221 may be prolonged. Since the light sensing element 40 of the present invention is a wafer level package structure, the space utilization of the element is extremely high, and the body of the product is actively small. The photo sensing element 40 can be combined with a circuit board by the solder pad 229, and the surface of the component opposite to the solder pad 229 is the light receiving surface of the component, and no additional housing and filter are needed. The level is also relatively broad. The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention, that is, the shapes, structures, features, methods, and spirits of the present invention are equally Variations and modifications are intended to be included within the scope of the invention. [Simple description of the drawing] Fig. 1 is a schematic cross-sectional view of a conventional light sensing element. 2 to 4 are cross-sectional views showing steps of a preferred embodiment of the present invention. 8 201042755 [Description of main component symbols] 10 Light sensing component 12 Photosensitive wafer 121 Conductor 14 Circuit board 16 Housing 18 Filter 22 矽 Substrate 221 Photosensitive unit 223 Protective layer 225 Perforation 227 Conductor 229 Pad 24 Glass substrate 241 Filter Layer 243 bonding layer 32 dividing groove 40 light sensing element