M341702 八、新型說明： 【新型所屬之技術領域】 本新型是有關於一種真空濺鍍設備的進氣裝置，特別 是指一種用於一真空濺鍍設備之基材與靶材是呈直立擺置 條件之真空濺鍍設備的進氣裝置。 【先前技術】 真空鍍膜技術中之錢鍍法（Sputtering )，其原理是在一 真空腔體中通入工作氣體（通常為Ar或n2等惰性氣體）， 並以基材為陽極，以靶材為陰極，使得工作氣體在高壓電 場作用下，會被解離呈離子與電子，即形成電漿（plasma)， 而電漿中的正離子於高壓電場中會加速移動並轟擊靶材（ Target)的表面，使靶材原子或團簇（cluster)濺飛出並沉 積、附著在目標基材（Substrate )的表面上，以形成薄膜。 如圖1所示，現有一真空濺鍍設備的進氣裝置1，是能 多組地直立設置於一真空濺鍍設備的一反應腔體3中，用 以將工作氣體（如Ar、N2、A…等）分路地輸送入該反應腔 體3中。每組真空濺鍍設備的進氣裝置1是包含一直立地 容置於該反應腔體3中的矩條狀氣柱11，以及一自該反應 腔體3外部延伸至其内部中並連接該氣柱u的進氣管12。 該氣柱11包括一中空的長柱體13、一設置於該長柱體13 之一表面中心處且用以連接該進氣管12之一端的進氣孔 ，以及多數内外相通地密佈於該長柱體13之相反另一表面 上的出氣孔15。因此，工作氣體會經該進氣管12輸送入該 氣柱11之長柱體13内部，續經該多數出氣孔15而擴散至 M341702 該反應腔體3内部。 然而，由於該氣柱11上只有唯一的由 ^ 推洛：《】八百唯的中心進氣點（即該 進軋孔14處），相當容易造成 ,! ^ . 體過度集中於該氣柱 之中間段部，而該氣柱丨丨之上 A铩嘴 之上下奴部處的氣體量卻較 马稀溥、不均的現象，如此一夾 不僅會連帶影響到該反 應腔體3内部所通入工作氣體的 卞聽的擴政均勻性，還會影響濺 之W質效率’尤其所述不良現象的負面影響，將隨 著真线鍍設備之尺寸規格日漸增大而更趨明顯、嚴重。 【新型内容】 因此，本新型之目的，即在提供一種能使工作氣體（ 如Ar Ν2、〇2…等）均勻地通入一反應腔體中，提昇進氣 均勻性之真空濺鍍設備的進氣裝置。 於是，本新型之真空濺鍍設備的進氣裝置，是能將一 工作氣體輸入該真空濺鍍設備的一反應腔體内，並包含至 =一容置於該反應腔體中的第一氣柱，以及多數第一進氣 管。該m包括-其内部具有多數依序排列之段隔室 的長柱體、夕數设置於該長柱體上且分別對應連通該多數 &隔室的進氣孔’以及多數密佈於該長柱體上且用以使該 多數段隔室與該反應腔體内部互通的出氣孔。該多數第一 進氣管是分別連接設置於該第一氣柱之進氣减，用以將 5亥工作氣體分流輸入該多數段隔室中，再經該多數出氣孔 以均勻擴散入該反應腔體内部。 本新型之功效在於，利用工作氣體能經該多數第一進 氣管而分流、分路地輸進入該第一氣柱之多數段隔室的設 M341702 計’讓工作氣體能均勻地通入該反應腔體内部，整體能達 到進氣均勻性佳的功效。 【實施方式】 有關本新型之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一個較佳實施例的詳細說明中，將可 清楚的呈現。 如圖2與圖3所示，本新型之真空濺鍍設備的進氣裝 置2的該較佳實施例，是直立設置於一真空濺鍍設備的一 反應腔體3中，並用以將一工作氣體（如Ar、A、〇2、Ar + 〇2…等）分流、分路地通入該反應腔體3内部。而有關該 真空濺鍍設備之操作原理與其他功能構件，是屬該技術領 域中具有通常知識者所熟知，也非關本新型之技術特徵， 不予詳述。 該真空濺鍍設備的進氣裝置2是包含一容置於該反應 腔體3中的第一氣柱21、一容置於該反應腔體3中且與該 第一氣柱21相併靠的第二氣柱22、三自該反應腔體3外部 延伸至其内部並連接該第一氣柱21的第一進氣管23〜25， 以及一自該反應腔體3外部延伸至其内部且連接該第二氣 柱22的第二進氣管26。本實施例中，該三第一進氣管 23 25的長度是各不相同，並皆能輸送Ar+ ο]之混合氣體 ’而該第二進氣管26是用以輸送〇2者。 該第一氣柱21包括一其内部具有三上下依序排列之段 隔室213的長柱體211、三上下間隔設置於該長柱體211之 一表面上且分別對應連通該三段隔室213的進氣孔212，以 M341702 及多數密佈於該長柱體211之相反另一表面上且用以使該三 段隔室213與該反應腔體3内部互通的出氣孔214。因此， 該三第一進氣管23〜25的底端部是分別連接該第一氣柱21 的該三進氣孔2丨2,用以將工作氣體之Αγ+〇2等氣體 分路地輸送入該三段隔室213中，使之婷姆 Τ便之續經該多數出氣孔 214而均勻擴散入該反應腔體3内部。 該第二氣柱22具有-併靠該第一氣柱21之長柱體2ΐι 的中空長柱體221、-設置於該長柱體221之—表面中心處 且用以連接該第二進氣管26之底端部的進氣孔222，以及 多數密佈於該長柱體221之相反另—表面上的出氣孔 同樣地，該工作氣體之〇2成分能另經該第二進氣管％輸入 該第二氣柱22之長柱體221中，續經該多數出氣孔223通 入該反應腔體3内部。 因此，當工作氣體經由該真空賤鑛設備的進氣裝置2 以分流、分路地通入該反應腔體3内部時，輔以該第一氣 柱h之該三段隔室213能分別供卫作氣體分流注入的設計 使传D亥第-亂柱21之上、中、下各段處能均句地進行出 氣，該工作氣體便能均句地擴散、通進入該反應腔體3内 部，藉以，整體能達到有效提昇進氣均句性之目的，改盖 ::真空濺鍍設備的進氣裝置i (見圖υ之該氣柱u僅具 早-的進氣孔以致無法均句出氣的問題。 二卜，該真錢鑛設備的進氣裝…然也能有其他 貝她万式’例如，以相同的一 t 丄 —一一 — 23〜25等組合構造，取代 弟一氣柱22與該第 的第—乱柱21與三第一進氣管 進: M341702 官26的結構，藉以，相對能使整體於進氣均勻性上能更加 提昇。 歸納上述，本新型之真空濺鍍設備的進氣裝置2，利用 將工作氣體是分路輸入該第一氣柱21之三段隔室213的設 計’讓該第一氣柱21能均勻地將工作氣體通入該反應腔體 3内部’整體能達到進氣均勻性佳的功效，故確實能達到本 新型的功效。 惟以上所述者，僅為本新型之較佳實施例而已，當不 能以此限定本新型實施之範圍，即大凡依本新型申請專利 範圍及新型說明内容所作之簡單的等效變化與修飾，皆仍 屬本新型專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一立體圖，說明現有一真空濺鍍設備的進氣裝 置之結構； 圖2是一立體分解圖，說明本新型真空濺鍍設備的進 氣裝置的一較佳實施例，是能將一工作氣體分流地通入一 反應腔體中；以及 圖3是該較佳實施例的一後視立體圖。 M341702 【主要元件符號說明】 2 真空濺鍍設備的進氣裝置 21 第一氣柱 211 長柱體 212 進氣孔 213 段隔室 214 出氣孔 22 第二氣柱 221 長柱體 222 進氣孔 223 出氣孔 23 〜25 第一進氣管 26 第二進氣管 3 反應腔體 10M341702 VIII. New description: [New technical field] The present invention relates to an air intake device for a vacuum sputtering device, in particular to a substrate and a target for a vacuum sputtering device being placed upright Intake device for vacuum sputtering equipment. [Prior Art] The vacuum plating method (Sputtering) is based on the principle that a working gas (usually an inert gas such as Ar or n2) is introduced into a vacuum chamber, and the substrate is used as an anode to target The cathode is such that the working gas is dissociated into ions and electrons under the action of a high-voltage electric field, that is, plasma is formed, and the positive ions in the plasma accelerate the movement and bombard the target in the high-voltage electric field. The surface causes the target atoms or clusters to fly out and deposit and adhere to the surface of the target substrate to form a film. As shown in FIG. 1, the air intake device 1 of a conventional vacuum sputtering apparatus can be assembled in a plurality of groups in a reaction chamber 3 of a vacuum sputtering apparatus for using a working gas (such as Ar, N2). A...etc.) is delivered into the reaction chamber 3 in a branched manner. The air intake device 1 of each group of vacuum sputtering devices comprises a rectangular strip-shaped air column 11 that is vertically received in the reaction chamber 3, and a portion extending from the outside of the reaction chamber 3 to the inside thereof and connecting the gas The intake pipe 12 of the column u. The air column 11 includes a hollow long cylinder 13 , an air inlet hole disposed at a center of one surface of the long cylinder 13 and connected to one end of the air inlet pipe 12 , and a plurality of inner and outer portions are closely connected to each other The vent 15 on the opposite surface of the long cylinder 13 is. Therefore, the working gas is sent into the long column 13 of the gas column 11 through the gas inlet pipe 12, and continues to diffuse through the plurality of gas outlet holes 15 to the inside of the reaction chamber 3 of M341702. However, since there is only one single inlet point on the gas column 11: "the eight-centre central inlet point (that is, the inlet and outlet holes 14), it is quite easy to cause, ^. The body is excessively concentrated on the gas column In the middle section, the amount of gas at the upper and lower slaves of the A-nozzle is higher than that of the horse, and such a clip not only affects the interior of the reaction chamber 3 The uniformity of the expansion of the working gas will also affect the efficiency of the splashing. In particular, the negative effects of the undesirable phenomena will become more apparent and severe as the size specifications of the true-line plating equipment increase. . [New content] Therefore, the object of the present invention is to provide a vacuum sputtering apparatus capable of uniformly introducing a working gas (such as Ar Ν 2, 〇 2, etc.) into a reaction chamber to improve the uniformity of intake air. Intake device. Therefore, the air inlet device of the vacuum sputtering apparatus of the present invention is capable of inputting a working gas into a reaction chamber of the vacuum sputtering apparatus, and includes a first gas contained in the reaction chamber. Column, and most of the first intake manifold. The m includes a long cylinder having a plurality of sequentially arranged compartments therein, and a plurality of vacant passages disposed on the long cylinders and corresponding to the inlet holes of the plurality of & compartments, respectively, and most of which are densely attached to the length An air outlet hole on the cylinder for intercommunicating the majority of the compartment with the interior of the reaction chamber. The plurality of first intake pipes are respectively connected to the intake air minus of the first air column, and are used for shunting 5 working gas into the plurality of compartments, and then uniformly diffusing into the reaction through the plurality of air outlets. Inside the cavity. The utility model has the effect that the working gas can be divided into the majority of the compartments of the first gas column through the majority of the first intake pipe, and the M341702 meter allows the working gas to uniformly pass into the reaction. Inside the cavity, the overall efficiency of the intake air is good. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. As shown in FIG. 2 and FIG. 3, the preferred embodiment of the air intake device 2 of the vacuum sputtering apparatus of the present invention is erected in a reaction chamber 3 of a vacuum sputtering apparatus for use in a work. Gas (such as Ar, A, 〇2, Ar + 〇 2, etc.) is introduced into the reaction chamber 3 in a divided manner. The operating principle and other functional components of the vacuum sputtering apparatus are well known to those of ordinary skill in the art, and are not related to the novel technical features and will not be described in detail. The air intake device 2 of the vacuum sputtering apparatus includes a first air column 21 accommodated in the reaction chamber 3, and is accommodated in the reaction chamber 3 and is adjacent to the first air column 21. a second gas column 22, a first gas inlet pipe 23 to 25 extending from the outside of the reaction chamber 3 to the inside thereof and connected to the first gas column 21, and a portion extending from the outside of the reaction chamber 3 to the inside thereof And connecting the second intake pipe 26 of the second air column 22. In this embodiment, the lengths of the three first intake pipes 23 25 are different, and both can deliver the mixed gas 'Ar+ ο' and the second intake pipe 26 is used to transport the 〇2. The first air column 21 includes a long cylinder 211 having three compartments 213 arranged in the upper and lower order, and three upper and lower intervals are disposed on one surface of the long cylinder 211 and respectively corresponding to the three compartments. The air inlet hole 212 of the 213 is provided with M341702 and an air outlet 214 which is densely disposed on the opposite surface of the long cylinder 211 and serves to interconnect the three-stage compartment 213 with the interior of the reaction chamber 3. Therefore, the bottom end portions of the three first intake pipes 23 to 25 are respectively connected to the three air intake holes 2丨2 of the first air column 21 for separately conveying the gas such as Αγ+〇2 of the working gas. The three-stage compartment 213 is inserted into the reaction chamber 3 evenly through the plurality of air outlets 214. The second air column 22 has a hollow long cylinder 221 of the long cylinder 2 ΐ of the first air column 21, and is disposed at the center of the surface of the long cylinder 221 and is connected to the second air inlet. The air inlet hole 222 at the bottom end of the tube 26, and the air outlet holes mostly on the opposite surface of the long cylinder 221, the second component of the working gas can pass through the second air inlet tube. The long cylinder 221 of the second gas column 22 is input into the reaction chamber 3 through the plurality of gas outlets 223. Therefore, when the working gas is introduced into the reaction chamber 3 through the air intake device 2 of the vacuum ore unit, the three-stage compartment 213 supplemented by the first air column h can be separately provided. The design of the gas split injection enables the gas to be uniformly discharged at the upper, middle and lower sections of the Dhai-chaotic column 21, and the working gas can be uniformly diffused into the reaction chamber 3, Therefore, the whole can achieve the purpose of effectively improving the uniformity of the intake air, and the cover:: the air inlet device of the vacuum sputtering equipment i (see the air column of the air column u only has an early air intake hole, so that it cannot be exhausted The problem is two Bu, the air intake of the real money mining equipment ... but also can have other shells of her type 'for example, with the same one t 丄 - one - 23 ~ 25 and other combinations of structures, replacing the brothers a gas column 22 With the structure of the first-stiffing column 21 and the three first intake pipe: M341702, the structure of the M26702 can be further improved in the overall uniformity of the intake air. In summary, the vacuum sputtering device of the present invention is summarized. The air intake device 2 is configured to input the working gas into a three-stage compartment of the first air column 21 The design of 213 'allows the first gas column 21 to uniformly pass the working gas into the interior of the reaction chamber 3' as a whole to achieve the effect of good uniformity of the intake air, so that the efficacy of the novel can be achieved. The present invention is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the novel patent application scope and the novel description contents are still in the present invention. Figure 1 is a perspective view showing the structure of an air intake device of a conventional vacuum sputtering apparatus; Fig. 2 is an exploded perspective view showing the vacuum sputtering apparatus of the present invention. A preferred embodiment of the gas device is capable of splitting a working gas into a reaction chamber; and Figure 3 is a rear perspective view of the preferred embodiment. M341702 [Main component symbol description] 2 Vacuum splash Intake device 21 of the plating equipment First gas column 211 Long cylinder 212 Air inlet hole 213 Segment compartment 214 Air outlet 22 Second gas column 221 Long cylinder 222 Air inlet hole 223 Air outlet 23 ~ 25 An intake pipe 26 a second intake pipe 3 a reaction chamber 10