M339080 八、新型說明： 【新型所屬之技術領域】 本創作係有關於一種發光二極體晶片封裝結構，尤指 一種透過粗糙面以產生高效率側向發光效果之發光二極 體晶片封裝結構。 【先前技術】M339080 VIII. New Description: [New Technology Field] This creation is about a light-emitting diode package structure, especially a light-emitting diode package structure that transmits a rough surface to produce a high-efficiency side-emitting effect. [Prior Art]
請參閱第一圖所示，其係為習知發光二極體之第一種 封裝方法之流程圖。由流程圖中可知，習知發光二極體之 第一種封裝方法，其步驟包括··首先，提供複數個封裝完 成之發光二極體（packaged LED) ( S800);接著，提供— 么卞狀基板本體（stripped substrate body)，其上具有一正極 導電執跡與一負極導電軌跡（S8〇2);最後，依序將每一 個到I完成之發光二極體（packaged LED)設置在該條狀 基板本體上，並將每一個封裝完成之發光二極體 iriagedLED)之正、1極端分別電性連接於該條狀基 板本月豆之正、負極導電執跡（S804) 0 =閱第二圖所示，其係為習知發光二極體之第二種 莖ί: 流程圖。由流程圖中可知’習知發光二極體之 —種封裝方法，其步驟包括·.首先 體(s— Substrate body )，如有紹;V t f 基板本 --—yrj ^ 脚 H 一 、負極端分別電性連接於該條狀基板本體 電軌跡接著，依序有;== :條狀基板本體上，並且將每-個 之 M339080 * 正、負極導電軌跡（S902);最後，將一條狀封裝膠體覆 . 蓋於該條狀基板本體及該等發光二極體晶片上，以形成一 帶有條狀發光區域（stripped light-emitting area)之光棒 (light bar ) ( S904 )。 然而，關於上述習知發光二極體之第一種封裝方法， 由於每一顆封裝完成之發光二極體（packagedLED)必須 先從一整塊發光二極體封裝切割下來，然後再以表面黏著 ❿ 技術（SMT)製程，將每一顆封裝完成之發光二極體 (packagedLED)設置於該條狀基板本體上，因此無法有 效縮短其製程時間，再者，發光時，該等封裝完成之發光 二極體（packagedLED)之間會有暗帶（darkband)現象 存在’對於使用者視線仍然產生不佳效果。 另外，關於上述習知發光二極體之第二種封裝方法， 由於所完成之光棒帶有條狀發光區域，因此第二種封裝方 法將不會產生暗帶（darkband)的問題。然而，因為該條 狀封裝膠體被激發的區域不均，因而使得光棒之光效率不 佳（亦即’靠近發光二極體晶片的封裝膠體區域會產生較 強的激發光源，而遠離發光二極體晶片的封裝膠體區域則 產生較弱的激發光源）。 請參閱第三圖所示，其係為習知發光二極體應用於側 •向發光之示意圖。由圖中可知，當習知之發光二極體晶片 -D應用於侧向發光時（例如：使用於筆記型電腦螢幕之導 光板Μ之側向光源），由於筆記型電腦螢幕之導光板^^非 系：4的關係’该發光二極體晶片D之基座s 1的長度l a M339080 =須相對的縮短。換言之，由於該基座s i的長 散ΪΠ光二極:晶片D將無法得到；效: 形。、產生發光-極體晶片D因過熱而燒壞的情 及扭壯士由上可知，目θ習知之發光二極體的封裝方法 封二、:構，顯然具有不便與缺失存在，而待加以改善者。 來從事：二本創作人有感上述缺失之可改善，且依據多年 理之之相關經驗，悉心觀察且研究之，並配合學 創ί 喊出—紐計合理且有収善上述缺失之本 【新型内容】 ^創作所要解決的技術問題，在於提供 ⑽錢二極體晶片 y之备光一極體結構於發光時，形成—連铐之$ 、=’而無暗帶(dai編)及光衰減(d= 咖）製程並利麵模（die勘⑷的p 付1作可有效地縮短其製程時間，而能進行大旦 再者’本創作之結構設計更適用於各種光源二二 組、裝飾燈條、照明用燈、或是掃描 D月先無 本創作所應用之範圍與產品。 應用’皆為 以創作之封裝膠體透過特殊模具模過程， 使仔本創作之發光二極體晶片封裝結構於直立的情況 9Please refer to the first figure, which is a flow chart of the first packaging method of the conventional light-emitting diode. As can be seen from the flow chart, the first packaging method of the conventional light-emitting diode comprises the steps of: firstly providing a plurality of packaged completed LEDs (S800); and then providing - a stripped substrate body having a positive conductive trace and a negative conductive trace (S8〇2) thereon; finally, each of the completed LEDs is sequentially disposed in the substrate On the strip substrate body, and electrically connecting the positive and the 1 extremes of each packaged light-emitting diode iriaged LED to the strip substrate, the positive and negative conductive traces of the moon bean (S804) 0 = read As shown in the second figure, it is the second type of stem of the conventional light-emitting diode: flow chart. A method of encapsulating a conventional light-emitting diode can be known from the flow chart, and the steps include: s-substrate body, if any; V tf substrate - yrj ^ foot H, negative The poles are electrically connected to the strip substrate body electrical trajectory, and then sequentially; == : strip-shaped substrate body, and each of the M339080 * positive and negative conductive traces (S902); finally, a strip The encapsulant is overlaid on the strip substrate and the LED wafers to form a light bar (S904) with a stripped light-emitting area. However, with regard to the first packaging method of the above-mentioned conventional light-emitting diode, since each packaged LED must be cut from a single LED package and then adhered to the surface. ❿ Technology (SMT) process, each packaged LED is disposed on the strip substrate body, so the process time cannot be effectively shortened, and further, when the light is emitted, the package is completed. There is a darkband between the packaged LEDs, which still has a bad effect on the user's line of sight. Further, with regard to the second packaging method of the above conventional light-emitting diode, since the completed light bar has a strip-shaped light-emitting region, the second packaging method will not cause a problem of a dark band. However, because the strip-shaped encapsulant is not uniformly excited, the light efficiency of the rod is poor (that is, the encapsulating colloid region near the LED chip generates a strong excitation light source, and is far away from the light-emitting diode. The encapsulated colloidal region of the polar body wafer produces a weaker excitation source). Please refer to the third figure, which is a schematic diagram of a conventional light-emitting diode applied to side-to-side illumination. As can be seen from the figure, when the conventional LED chip-D is applied to the lateral illumination (for example, the side light source used for the light guide plate of the notebook computer screen), the light guide plate of the notebook computer screen ^^ Non-system: 4 relationship 'The length of the base s 1 of the light-emitting diode wafer D la M339080 = relatively shortened. In other words, due to the long dimming diode of the susceptor s i: the wafer D will not be available;发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光By. To engage in: The two creators have the feeling that the above-mentioned deficiencies can be improved, and based on the relevant experience of many years, carefully observe and study, and cooperate with the creator of Creativity ί — 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽The new content] ^ The technical problem to be solved in the creation is to provide (10) the money diode structure y light-emitting one-pole structure in the light-emitting, forming - even the $, = ' without dark bands (dai) and light attenuation (d = coffee) process and profit face mold (die survey (4) p pay 1 can effectively shorten the process time, and can carry out the big Dan again's structure design of this creation is more suitable for various light source two groups, decoration Light strips, lighting lights, or scanning D-months have not been applied to the scope and products of this creation. The application 'is all created by the encapsulation colloid through a special mold process, so that the creation of the light-emitting diode chip package structure In the case of erect 9
M339080 下，即可產生側向發光的效果，因此本創作不么 足的情況發生。換言之，本創作不僅可產生侧散熱不 能，更能顧到應用於薄型殼體内之散熱效果Y °投光的功 為了解決上述技術問題，根據本創作之其 案，提供-種透過粗糖面以產生高效率側向^ = 1方 光二極體晶片封裝結構，其包括··—基板單果之發 元、及一封裝膠體單元。 ％ —發光單 其中，該基板單元係具有一基板本體、及分 該基板本體上之一正極導電執跡與一負極導電/形成於 光單元係具有複數個設置於該基板本體上之^跡_。該發 晶片’其中每—個發光二極體晶片係具有分別電體 5亥基板單元的正、負極導電軌跡之一正極端與— ' 欠方； 該封裝膠體單元係具有複數個分別覆蓋於該等發^端。 體晶片上之封裝膠體，其中每一個半封裝膠體之上.極 鈾表面係分別具有一膠體孤面及一粗鏠膠體出光面及 另外，本創作之發光二極體晶片封裝結構，可更谁一 步包括下例兩種結構： ^一 第一種··一框架單元，其係為一層覆蓋於該基板本體 上並包覆母一個半封裝膠體而只露出該等粗糙膠體出光 面之框架層。 第二種：一框架單元，其具有複數個分別覆蓋該等封 裝膠體而只露出每一個半封裝膠體的粗链膠體出光面之 框體，其中該等框體係彼此分離地設置於該基板本體上。 因此，本創作之發光二極體結構於發光時，形成一連 10 M339080 (darkband) B ^ 亚且’本創作係透過晶片直接封裝（Chip〇n J>ai ’ COB)製程並利用遷模（此咖⑷的方式，以 ^創作可有效地驗其餘時間，而能進行大量生產。 由於本辦之發光二極體晶$封裝結構於直立的情 ' 即可產生側向發光的效果。因此，本創作不僅可產 侧向投光的功能，更能顧到應用於薄型殼體内之散埶效 果。 … 為了能更進一步瞭解本創作為達成預定目的所採取 ’技術、手段及功效’請參閱以下有關本創作 ㈣圖，相信本創作之目的、特徵與特點，t可由此= :入且具體之瞭解，然而所附圖式僅提供參考與說明用， 並非用來對本創作加以限制者。 【實施方式】 _本創作之第一實施例係提供一種透過粗糙面以產生 尚效率側向發光效果之發光二極豸晶片封裝結構之封裝 方法，其包括下列步驟： ' 首先，請配合第四a圖及第四A圖所示，提供一基板 單兀1，其具有一基板本體2 〇、及分別形成於該基板本 體1〇上之複數個正極導電軌跡2 i與複數個負極導電 執跡1 2 (s 1 〇〇)。§亥基板本體1 〇係包括一金屬層1 〇 A及一成形在該金屬層i 〇 A上之電木層（bakelit^ayer) 10B(如第四3圖及第四A圖所示）再者，依不同的設 11 M339080 计需求’该基板本體1 〇係可為一印刷電路板（PCB )、 一軟基板（flexible substrate )、一 紹基板（aiuminum substrate)、一陶兗基板（ceramic substrate)、或_銅美板 (copper substrate)。此外，該正、負極導電執跡丄1、 1 2係可採用銘線路（aluminum circuit)或銀線路（S]Qver circuit)，並且該正、負極導電執跡i^ 2之佈局 (layout)係可隨著不同的需要而有所改變。 接著，請配合第四b圖及第四B圖所示，透過矩陣的 方式，分別設置複數個發光二極體晶片2 〇於該基板本體 1 0上，以形成複數排縱向發光二極體晶片排2i : :個=二2◦係具有分別電性連接於該基板 早兀的正、負極導電執跡1 1、1 2之-正極端2 Π Ί : 一負極端202 (S102)。 而201與 此外以本別作之第―實施例而言，每—個發二 體晶片20之正、負極總ρΠΊ Ο (Λ n y ^ 个 之導線wju刺 0 2係透過兩相對應Under the M339080, the effect of lateral illumination can be produced, so this creation is not enough. In other words, the creation can not only produce side heat dissipation, but also can be applied to the heat dissipation effect in the thin casing. Y ° Projection work In order to solve the above technical problems, according to the creation of the present invention, A high-efficiency lateral ^=1 square photodiode chip package structure is produced, which comprises a substrate, a single element, and an encapsulant unit. % - illuminating unit, wherein the substrate unit has a substrate body, and one of the positive electrode conductive traces on the substrate body and one negative electrode conductive/formed on the light unit has a plurality of traces disposed on the substrate body _ . The hair-chip of each of the light-emitting diodes has one positive and negative conductive traces of the positive and negative conductive traces of the electrical substrate, and the lower side; the encapsulated colloid unit has a plurality of covers respectively Wait for the hair end. The encapsulant on the body wafer, wherein each of the semi-encapsulated colloids has a colloidal surface and a rough colloidal surface, and the light-emitting diode package structure of the present invention can be further The first step includes the following two structures: a first type of frame unit, which is a layer of a cover layer covering the substrate body and covering the mother half of the encapsulant colloid to expose only the rough colloidal light exiting surface. The second type: a frame unit having a plurality of frames covering the package colloids and exposing only the thick chain colloidal light-emitting surface of each of the semi-encapsulated colloids, wherein the frame systems are disposed on the substrate body separately from each other . Therefore, the light-emitting diode structure of the present invention forms a series of 10 M339080 (darkband) B ^ ya when the light is emitted, and 'this creation is directly packaged by the chip (Chip 〇 n J > ai ' COB) process and utilizes the migration mode (this The way of coffee (4), the creation of the ^ can effectively test the rest of the time, and can be mass-produced. Because of the light-emitting diode crystal package of the office, the package structure can produce lateral illumination effect. Therefore, this The creation not only produces the function of lateral light projection, but also the divergence effect applied in the thin casing. ... In order to further understand the 'technical, means and efficacy' of the creation for the intended purpose, please refer to the following For the purpose of this creation (4), I believe that the purpose, characteristics and characteristics of this creation can be understood from the following: However, the drawings are only for reference and explanation, and are not intended to limit the creation. The first embodiment of the present invention provides a method for packaging a light-emitting diode package structure that transmits a rough surface to produce an effective lateral light-emitting effect, which includes the following steps. First, as shown in FIG. 4A and FIG. 4A, a substrate unit 1 is provided, which has a substrate body 2 及 and a plurality of positive conductive tracks 2 i respectively formed on the substrate body 1 〇 And a plurality of negative electrode conductive traces 1 2 (s 1 〇〇). The base substrate body 1 includes a metal layer 1 〇A and a bakelite layer formed on the metal layer i 〇A (bakelit^ayer) 10B (as shown in Figure 4 and Figure 4A). In addition, according to the different requirements of 11 M339080, the substrate body 1 can be a printed circuit board (PCB), a flexible substrate. , an aiuminum substrate, a ceramic substrate, or a copper substrate. In addition, the positive and negative conductive traces 丄 1, 1 2 can be used in the aluminum circuit (aluminum circuit) Or silver line (S]Qver circuit), and the layout of the positive and negative conductive traces i^ 2 can be changed according to different needs. Next, please cooperate with the fourth b and fourth In the figure B, a plurality of light-emitting diode chips 2 are respectively disposed through the matrix. The plate body 10 is formed to form a plurality of rows of vertical light emitting diode chips 2i: : one = two ◦ series having positive and negative conductive traces 1 1 , 1 2 electrically connected to the substrate, respectively - Positive extreme 2 Π Ί : a negative terminal 202 (S102), and 201 and, in addition, in the first embodiment, the positive and negative total ρ ΠΊ 每 (Λ ny ^ of each of the two-body wafer 20 The wire wju thorn 0 2 series through the two corresponding
早兀1之正、負極導電執跡 I 者:，-排縱向發光二極體晶片排2二t:列； 式e又置於该基板早兀i之基板本體 =體晶卿係可為一藍㈣^ 當然，上述該等發光二極體晶片2 〇之 t非用以限_作，例如：請參閱第五圖所 舍光-極體晶片透過覆晶的方式達成電性連接之示意 12 M339080 rfI. ,. ,2如透過複數個相對應之錫球Β s 設計需求’該等發光二極體未=據不同的 係可以串聯（paraueu、並，不）之正、負極端 (P-llel/senaO ^ 正、負極導電軌跡產生電性連接。早70 (®未不）之 模且】後：:配合第四C圖及第四C圖所示，透過-第-、：早1，將複數個條狀封裝膠體 在每一排縱向發光二極體晶 =也^別伋盍 =3之上表面係具有複數個相對應:母個 晶片20之膠體弧面3〇s (sl〇4)。 Μ先—通體 /旁參閱第六圖所示，該第—模具單福！係由一第一 上換具Ml ：[及―肖於承載該絲本 之 組成，並且該第-上模具⑴係具;複 相對應δ亥寺縱向發光二極體晶片排2之第一通道 〇：_Μ每—㈣—通道MU ◦係具有複數個凹槽G， ::固:槽G之上表面係具有一個相對應該膠體弧面 d U b 之稹具弧面（moldcamberedsurface) G 1 〇。 /匕外，該等第—通道町1 〇的尺寸係與該等條狀封 衣恥肢3的尺寸相同。再者，每一條個狀封裝膠體3係可 j不同的使用需求’而選擇為：由—石夕膠（siiic〇心與 一螢光粉（flUorescent powder)所混合形成之螢光膠體 13 M339080 (fluorescent resin)、或由一環氧樹脂（epoxy)與一螢光 粉（fluorescent powder )所混合形成之螢光膠體 (fluorescent resin) 〇 緊接者’请配合弟四d圖及第四d圖所示，沿著每兩 個縱向發光二極體晶片2 0之間，横向地切割該等條狀封 裝膠體3，以形成複數個彼此分開地覆蓋於每一個發光二 極體晶片2 0上之封裝膠體3 0，其中每一個半封裝膠體 3 0的上表面係為該膠體弧面3 〇 s ( s 106)。 然後，請配合第四e圖及第四£圖所示，透過一第二 模具單元（second mold unit) Μ 2，將一框架單元4舞: 闕基板本體1 〇及該等封裝膠體3 Q上並且埴充ςς 間(陶。其中，該第二模具單元 〇之'第_ 2 1及—用於承載該基板本體1 C 2所組成，並且該第二上模呈M2 1 U -it、相對應該框架單元4二 1 外該第二通道Μ2丄〇 1 〇，此 高度相同，而該第二通道封裝膠體…^ 4的寬度相同。 丄〇的見度係與該框架單元 最後，請再參閱第四6The positive electrode of the early 兀1, the negative electrode conductive trace I:, - row of vertical light-emitting diode wafer row 2 2 t: column; the formula e is placed on the substrate early substrate i body = body crystal system can be a Blue (4) ^ Of course, the above-mentioned light-emitting diode chips 2 are not limited to use, for example, please refer to the schematic diagram of the fifth embodiment of the light-pole wafer through the flip chip to achieve electrical connection 12 M339080 rfI. , . , 2, if through a number of corresponding solder balls s s design requirements 'The light-emitting diodes are not = according to different systems can be connected in series (paraueu, and not) positive and negative ends (P- Llll/senaO ^ The positive and negative conductive traces are electrically connected. The early 70 (® not) model and the following:: with the fourth C and fourth C, through - -, : early 1, The plurality of strip-shaped encapsulants have a plurality of corresponding surfaces on each row of longitudinally-emitting diode crystals=also: 汲盍=3: the colloidal arc surface of the mother wafer 20 is 3 〇s (sl〇4 Μ先—通体/byside the sixth figure, the first mold-single blessing! is replaced by a first upper M1: [and “Shao’s carrying the silk book, and the first-up The mold (1) is the first channel of the vertical light-emitting diode row 2 of the δhai Temple: Μ Μ per—(four)—the channel MU has a plurality of grooves G, :: solid: the upper surface of the groove G The system has a moldcambered surface G 1 相对 corresponding to the colloidal arc surface d U b. / /, the size of the first channel - 1 〇 and the size of the strip-shaped seal pubic limb 3 In addition, each of the individual encapsulating colloids 3 can be selected from the following: a fluorescent colloid formed by mixing a siiic core and a fluorescent powder. M339080 (fluorescent resin), or a fluorescent resin formed by mixing an epoxy resin with a fluorescent powder. 〇 〇 请 请 请 请 请 请 请 四 四 四 四 四 四 四 第四As shown, the strip-shaped encapsulant 3 is laterally cut along each of the two longitudinal light-emitting diode wafers 20 to form a plurality of separate coverings on each of the light-emitting diode wafers 20. The encapsulant 30, wherein the upper surface of each of the semi-encapsulated colloids 30 The colloidal arc surface is 3 〇s (s 106). Then, as shown in the fourth e diagram and the fourth map, a frame unit 4 is danced through a second mold unit Μ 2: The substrate body 1 is disposed on the encapsulant 3 Q and is filled with a ceramic package. The second mold unit is configured to carry the substrate body 1 C 2 and The second upper mold is M2 1 U -it, and the second channel Μ2丄〇1 外 is opposite to the frame unit 4 1-2, and the height is the same, and the width of the second channel encapsulant ... 4 is the same. The visibility of the frame and the frame unit. Finally, please refer to the fourth 6
圖所示，沿著每兩個縱 =_亚配》弟四f圖及第四F 弧 G G，每-辦封裝膠體3 u (J S及一形成於該半膠體 地切割該框架單元4、二—極體晶片2 0之間，横向 1 0，以形成複數條光^ ^封歧.體3 〇、及該基板本體 0被對切成兩個半封裴^雕^，並且每一個半封裝膠體3 0 0係具有一半膠…，^G 〇 〇，每一個本钳驶hm舰〇 14 M339080 =+〇 〇 S前端之粗糖膠體出光面3 Ο 1 S，該框架單 兀4被切割成複數個只讓每一條光#li上之: 裝膠體3 0 Q的該等粗糖膠體出光 框 if尸4 Vs11。)。其中，該等框架糊係可為= 框木層，例如：白色框架層。 一每此外，第二實施例之步驟S2⑽至s裏係分別與第 等S100至S106相同。亦即，步驟S200係 二=之圖及第四撕 岡'一：矿、寺同於第一貧施例之第四b圖及第四b c圖及鱗同於第—實施例之第四 固及弟四C圖之示意圖說明；步驟 貫施例之第四d圖及第四0圖之示意圖說明。手门方、乐 一第一握呈Λ广閱弟七3圖及第七Α圖所示，透過 f. 具早兀M3，將複數條條狀框架層（stripped 『m) = I蓋於該基板本體1 〇及該等封裝膠體 (S208 )亚縱向地填充於每兩個封裝膠體3 〇之間 二模具單元M3係由—第三上模具M3 1 i 基板本體1 ◦之第三下模具Μ3 2所組 向私 1 ♦二上模具Μ 3 1係具有複數條相對應該等縱 、:，;Α/Γ:極體晶片？ 2之第三通道Μ3 1 〇，並且該第三 1 〇的高度係與該等封裝膠體3 0的高度相 同，而该弟三通道M3 i 〇的寬度係大於每一個半封裝膠 15 M339080 體3 0的寬度。 最後，請再參閱第七a圖，並配合第七b圖及第七Β 圖所示，沿著每兩個縱向發光二極體晶片2 0之間，横向 地切割該等條狀框架層（stripped frame layer) 4 '、該 等封裝膠體3 Ο、及該基板本體1 Ο，以形成複數條光棒 L 2，並且每一個半封裝膠體3 0被對切成兩個半封裝膠 體3 0 0，每一個半封裝膠體3 0 0係具有一半膠體弧面 3 0 0 S及一形成於該半膠體弧面3 0 0 S前端之粗糙 膠體出光面3 0 1 S，該等條狀框架層（stripped frame layer ) 4 /被切割成複數個只讓每一個半封裝膠體3 0 0 的粗糙膠體出光面3 0 1 S露出之框體4 0 / (S210)。 其中’該等框體4 0 係可為不透光框體5例如：白色框 體。 請參閱第八a圖及第八A圖所示。第八a圖係為本創 作封裝結構之第三實施例之部分封裝流程示意圖，第八A 圖係為本創作封裝結構之第三實施例之部分封裝流程剖 面示意圖。由第八圖之流程圖可知，第三實施例與第一、 二實施例的差異在於：第一實施例之步驟S104與第二實 施例之步驟S204於第三實施例中皆更改為：「沿著每兩個 横向（transverse)發光二極體晶片2 0之間，縱向地切 割該等條狀封裝膠體3 /」。 再者，一第四模具單元Μ4係由一第四上模具Μ4 1 及一用於承載該基板本體1 0之第四下模具Μ4 2所組 成。此外，該第四模具單元Μ4與該第一模具單元Ml最 16 M339080 大的不同在於：每一個第四通道从41 〇之上表面及前表 面係分別具有一模具弧面（m〇ld cambered surface) 3 〇 s /。所以，複數個條狀封裝膠體3 /係横向地分別覆蓋 在縱向的（longitudinal)發光二極體晶片2上。 现As shown in the figure, along each of the two vertical = _ sub-distribution, the fourth f-figure and the fourth F-arc GG, each of the encapsulation colloids 3 u (JS and one formed in the semi-colloidal cutting of the frame unit 4, two - between the polar body wafers 20, the lateral direction 10, to form a plurality of optical components, the body 3 〇, and the substrate body 0 are cut into two half-sealings, and each half-package The colloidal 3 0 0 series has half of the glue..., ^G 〇〇, each of the clamps hm ship 〇 14 M339080 = + 〇〇 S front end of the raw sugar colloidal surface 3 Ο 1 S, the frame single 兀 4 is cut into plural Only let each light #li on: Pack the colloids 3 0 Q of these crude sugar colloids out of the light box if the body 4 Vs11.). Wherein, the frame pastes may be = frame wood layers, for example: white frame layers. Further, the steps S2(10) to s of the second embodiment are the same as the firsts S100 to S106, respectively. That is, the step S200 is the second=Fig. and the fourth tearing one's one: the fourth and the bth diagrams of the first and second embodiments of the mine, the same as the fourth embodiment, and the fourth solid of the first embodiment. Schematic diagram of the fourth and fourth diagrams of the fourth embodiment; the fourth and fourth diagrams of the steps are illustrated. The first door of the hand and the first hand of Le Yi are shown in the 7th and 7th pictures of the Λ广阅弟, and the strips of the strip frame (stripped 『m) = I are covered by the f. The substrate body 1 and the encapsulants (S208) are sub-longitudinally filled between each two encapsulants 3 二. The two mold units M3 are composed of a third upper mold M3 1 i a substrate body 1 and a third lower mold Μ 3 2 groups to private 1 ♦ 2 upper mold Μ 3 1 series with a plurality of lines should be equal to vertical, :,; Α / Γ: polar body wafer? The third channel of 23 Μ3 1 〇, and the height of the third one 〇 is the same as the height of the encapsulants 30, and the width of the three-channel M3 i 系 is greater than that of each of the semi-encapsulated glues 15 M339080 The width of 0. Finally, please refer to the seventh diagram a, and in parallel with the seventh b and seventh diagrams, the strip frame layers are laterally cut along each of the two longitudinal LED chips 20 ( Stripped frame layer 4', the encapsulant 3 Ο, and the substrate body 1 Ο to form a plurality of light rods L 2 , and each of the half encapsulants 30 is cut into two half encapsulants 3 0 0 Each of the semi-encapsulated colloids has a half-colloidal arc surface of 3 0 0 S and a rough colloidal light-emitting surface 3 0 1 S formed at the front end of the semi-colloidal arc surface 3 0 0 S, the strip-shaped frame layers ( The stripped frame layer 4 / is cut into a plurality of frames 4 0 / (S210) which are exposed only by the rough colloidal light-emitting surface of each of the semi-encapsulated colloids 300. The frame 40 can be an opaque frame 5 such as a white frame. Please refer to Figures 8a and 8A. The eighth diagram is a schematic diagram of a part of the packaging process of the third embodiment of the creation package structure, and the eighth diagram is a schematic diagram of a part of the packaging process of the third embodiment of the creation package structure. It can be seen from the flowchart of the eighth embodiment that the difference between the third embodiment and the first and second embodiments is that the step S104 of the first embodiment and the step S204 of the second embodiment are changed in the third embodiment to: The strip-shaped encapsulant 3/" is longitudinally cut between each of the two transverse light-emitting diode wafers 20. Further, a fourth mold unit Μ4 is composed of a fourth upper mold Μ4 1 and a fourth lower mold Μ42 for carrying the substrate body 10. In addition, the fourth mold unit Μ4 differs greatly from the first mold unit M1 by a maximum of 16 M339080 in that each of the fourth passages has a mold arc surface from the upper surface of the 41 〇 and the front surface system respectively (m〇ld cambered surface ) 3 〇s /. Therefore, a plurality of strip-shaped encapsulants 3/ are laterally covered on the longitudinal LED 2, respectively. Now
請參閱第九圖所示，其係為本創作發光二極體晶片之 封裝結構應用於侧向發光之示意圖。由圖中可知，當本創 作之發光二極體晶片D應用於侧向發光時（例如：二用<於 筆記型電腦螢幕之導光板敗侧向光源），該發光二極體 晶片D之基座S 2的長度L b可依散熱的f要而加長 像習知-樣受導光板Μ厚度的限制）。換言之，由於钱 座S 2的長度L b可依散熱的需要而加長，因此本創作二 發光二極體晶片D將可得到有效的散熱效果，進而可 發光一極體晶片D因過熱而燒壞的情形。 綜上所述，本創作之發光二極體結構於發光時 一連、..買之發光區域，而無暗帶及光衰減的情況發生』 ^創作係透過晶片直接封裝製程並利用壓模的方式，以 得本創作可有效地縮短其製料間，而能進行大量 再者，由財創作之發光二極體晶片封裝結構於直 ，下，即可產生_發光的效果。因此，本創作不僅可』 =側向投光的功能，更能顧到應用於薄型殼體内之散熱效 惟，以上所述，僅為本創作最佳之—的具體實施例之 坪、、、田說明與惟本解之特徵並不舰於此， 以限制本創作，賴作之所有範圍應以下述之申，專利a M339080 圍為準，凡合於本創作申請專利範圍之精神與其類似變化 之實施例，皆應包含於本創作之範疇中，任何熟悉該項技 藝者在本創作之領域内，可輕易思及之變化或修飾皆可涵 蓋在以下本案之專利範圍。 【圖式簡單說明】 第一圖係為習知發光二極體之第一種封裝方法之流程圖； Φ 第二圖係為習知發光二極體之第二種封裝方法之流程圖； 第三圖係為習知發光二極體應用於側向發光之示意圖； 第四a圖至第四f圖分別為本創作封裝結構之第一實施 例之封裝流程立體不意圖， 第四A圖至第四F圖分別為本創作封裝結構之第一實施 例之封裝流程剖面示意圖； 第五圖係為本創作發光二極體晶片透過覆晶（flip-chip) 的方式達成電性連接之示意圖； 第六圖係為本創作第四C圖未灌入封裝膠體前之示意圖； _ 第七a圖至第七b圖分別為本創作封裝結構之第二實施 例之部分封裝流程立體示意圖； 第七A圖至第七B圖分別為本創作封裝結構之第二實施 例之部分封裝流程剖面示意圖； - 第八a圖係為本創作封裝結構之第三實施例之部分封裝 . 流程立體示意圖； 第八A圖係為本創作封裝結構之第三實施例之部分封裝 流程剖面示意圖；以及 18 M339080 第九圖係為本創作發光二極體晶片之封裝結構應用於侧 向發光之示意圖。 【主要元件符號說明】 [習知] 發光二極體晶片 D 導光板 M 基座 S 長度 L [本創作] 基板單元 1 基板早元 1 縱向發光二極體晶片排2 條狀封裝膠體 基板本體 1 0 金屬層 1 〇 A 電木層 1 0 B 正極導電執跡 1 1 負極導電執跡 1 2 正極導電執跡 1 1 負極導電執跡 1 2 發光二極體晶片 2 0 正極端 2 0 1 負極端 2 0 2 發光二極體晶片 2 0 〆 正極端 2 0 r 負極端 2 0 2 ^ 封裝膠體 3 0 19 M339080Please refer to the ninth figure, which is a schematic diagram of the package structure of the light-emitting diode chip applied to the lateral illumination. As can be seen from the figure, when the light-emitting diode chip D of the present invention is applied to the lateral light-emitting (for example, the light source of the notebook computer screen is lost to the side light source), the light-emitting diode chip D is The length L b of the susceptor S 2 can be lengthened according to the heat dissipation, as is conventionally limited by the thickness of the light guide plate. In other words, since the length L b of the money seat S 2 can be lengthened according to the heat dissipation requirement, the second light-emitting diode wafer D of the present invention can obtain an effective heat dissipation effect, and the light-emitting one-pole wafer D can be burned out due to overheating. The situation. In summary, the light-emitting diode structure of the present invention is connected to the light-emitting area when the light is emitted, and there is no dark band and light attenuation. The creation system directly encapsulates the process through the wafer and uses the stamper. In this way, the creation can effectively shorten the material-making room, and a large number can be carried out. The light-emitting diode package structure created by Cai is directly and downwardly, and the effect of illuminating can be produced. Therefore, this creation can not only be used for the function of lateral projection, but also for the heat dissipation effect applied in the thin casing. As described above, it is only the best embodiment of the present invention. The characteristics of Tiantian and the only solution are not in this case, so as to limit the creation of this work. All the scope of the work should be based on the following application, patent a M339080, and the spirit of the patent application scope is similar. The examples of the changes should be included in the scope of this creation. Anyone who is familiar with the art in this field of creation can easily think of changes or modifications that can be covered in the following patents. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a flow chart of a first package method of a conventional light-emitting diode; Φ The second figure is a flow chart of a second package method of a conventional light-emitting diode; The three figures are schematic diagrams of the conventional light-emitting diodes applied to the lateral light-emitting; the fourth to fourth-fifth views are the three-dimensional non-intention of the packaging process of the first embodiment of the creative package structure, and the fourth figure is to FIG. 4 is a schematic cross-sectional view showing the packaging process of the first embodiment of the present invention; FIG. 5 is a schematic view showing the electrical connection of the light-emitting diode chip through a flip-chip method; The sixth figure is a schematic view of the fourth C picture before the creation of the encapsulation colloid; _ seventh to seventh b are respectively a schematic view of a part of the packaging process of the second embodiment of the creation package structure; FIG. 7B is a schematic cross-sectional view showing a part of the encapsulation process of the second embodiment of the present invention; - the eighth embodiment is a partial encapsulation of the third embodiment of the authoring package structure. Eight A map is based As part of the package flow to a third embodiment of a cross-sectional schematic view of a package structure; and FIG. 18 M339080 ninth package based light emitting diode chip of the light emitting side is applied to the schematic diagram of the present writing. [Explanation of main component symbols] [General] LED Diode Wafer D Light Guide M Base S Length L [This Creation] Substrate Unit 1 Substrate Early 1 Longitudinal Light Emitting Diode Wafer 2 Strip Encapsulated Colloid Substrate Body 1 0 Metal layer 1 〇A Electric wood layer 1 0 B Positive conductive trace 1 1 Negative conductive trace 1 2 Positive conductive trace 1 1 Negative conductive trace 1 2 Light-emitting diode wafer 2 0 Positive pole 2 0 1 Negative terminal 2 0 2 Light-emitting diode chip 2 0 〆 Positive terminal 2 0 r Negative terminal 2 0 2 ^ Package colloid 3 0 19 M339080
半封裝膠體 3 0 0 膠體弧面 3 0 S 半膠體弧面 300S 粗糙膠體出光面 301S 條狀封裝膠體 3 ^ 模具弧面 3 0 S ^ 框架單元 4 框架層 4 0 條狀框架層 4 ^ 框體 4 0 ^ 導線 W 錫球 B 第一模具單元 Μ 1 第一上模具 Mil 第一通道 Ml 1 〇 第一下模具 Μ 1 2 凹槽 G 模具弧面 G 1 0 第二模具單元 M2 第二上模具 M2 1 第二通道 M2 10 第二下模具 M 2 2 第三模具單元 M3 第三上模具 M 3 1 第三通道 M3 1 0 第三下模具 M 3 2 第四模具單元 Μ 4 第四上模具 M4 1 第四通道 M4 1 0 第四下模具 M 4 2 20 M339080 光棒 光棒 發光二極體晶片 導光板 基座 長度Semi-encapsulated colloid 3 0 0 Colloidal curved surface 3 0 S Semi-colloidal curved surface 300S Rough colloidal illuminating surface 301S Strip-shaped encapsulant 3 ^ Mold curved surface 3 0 S ^ Frame unit 4 Frame layer 4 0 Strip frame layer 4 ^ Frame 4 0 ^ Wire W Tin ball B First die unit Μ 1 First upper mold Mil First channel Ml 1 〇 First lower mold Μ 1 2 Groove G Mold curved surface G 1 0 Second mold unit M2 Second upper mold M2 1 second channel M2 10 second lower mold M 2 2 third mold unit M3 third upper mold M 3 1 third passage M3 1 0 third lower mold M 3 2 fourth mold unit Μ 4 fourth upper mold M4 1 fourth channel M4 1 0 fourth lower mold M 4 2 20 M339080 light rod light rod light emitting diode wafer light guide plate base length