M337845 -八、新型說明： 【新型所屬之技術領域】 本創作是有關-種發光二極體，特別是指發光二極 體的基板和反射環係陶究材質，以具㈣高溫㈣之含 氧化矽成份結合劑黏結，以因應高功率發光二極體之工 作溫度，而且反射環内部為錐面或玉求面，Μ較佳之反 射特性者。 【先前技術】 ，隨著積體電路製作技術的進步，電子元件的設計與 製作持續朝向細微化的趨勢發展。為了因應j c|ij程技 術微小化，以及電子資訊產品輕薄短小的^向，元 ^連結在印刷電路板上的技術也由插件式演進成表面黏 著式（Surface Mount Device，SMD)。 習見發光二極體結構，如第i圖所示，係以發光二 極體晶片（chip或die)1 i設置於以Βτ樹脂(Bismaieimide • Triazine Resin)製成的基板12上，二極體晶片⑽ip或 _ die)ll的電極以導線（b〇nding抝代）13與基板上預先設 置的對外電氣連結之銅箔14連接，二極體晶片丨丨的周 圍設置反射環15，最後再以樹脂16將二極體晶片U以 及導線13封裝。其優點是生產上能適用於大量發光二極 體晶片的封裝，生產成本低；但其缺點則是樹脂不並是 良好^導熱材料，晶片u所產生的高熱必需仰賴㈣ 14來散發，這種電氣通道和散熱通道合為一體的封裴方 5 -M337845 式並不適用於高功率發光二極體晶片。 為了改善上述之缺失，有業者乃提出了將基板和反 射板當作散熱槽（heat sink)之高功率發光二極體晶片的 封裝結構。 凊參照第2圖所示，其主要是利用一金屬基板21 的表面預先形成可電氣連接之槽道22,金屬基板21的 中央设置二極體晶片23，金屬基板21的上端再設置中 央具有孔道的反射環24，反射環24的中央孔道241上 ⑩方再設置一光學鏡罩25所構成。 上述金屬基板21及反射環24係使用具有高溫傳導 ，但電性絕緣的金屬材料。由於金屬基板21和反射環24 ^都是金屬材質，其間僅能使用低溫樹脂或性質机近的黏 2劑來相互黏結。使得當發光二極體的工作溫度越來越 高時，低溫樹脂等黏結劑即容易因受高熱而變質，黏結 性相對降低，導致基板和反射環的分離，造成晶片的損 壞0 、 • • 此外，如圖所示，習見反射環24，其内部中央孔道 .241為直立筒狀，直立反射面的反射效果差，亦阻礙了 光折射及散熱。 【新型内容】 創作人有鑑於如述先前技術之缺點，乃依其從事電解電 容器之製造經驗和技術累積，針對上述缺失悉心研究各=二 決的方法，在經過不斷的研究、實驗與改良後，終於開發設 6 M337845 *計出本創作。 :此’本創作旨在提供一種發光二極體反射環以及 =土板之結合構造’係使基板和反射環之間得使用耐 2溫之含有氧化矽成份的結合劑（如高溫玻璃膠）來結 合0 本創作之次一目的在提供一種發光二極體反射環以 及其與基板之結合構造，係使用由氧化鋁等陶瓷材料之 射晨反射板除了其底面與金屬基板的結合部位外， 馨其他表面可被覆銀、金等金屬層。 本創作之再一目的在提供一種發光二極體反射環以 *及其與基板之結合構造，係使反射環的内表面，可以是 - 球面或錐面，以增加發光二極體之反射功能。 本創作之又一目的在提供一種發光二極體反射環以 及其與基板之結合構造，其基板亦得使用氧化鋁或氮化 銘等材料所製成。 φ 為便貴審查委員能對本創作之目的、形狀、構造 .裂置特徵及其功效，做更進一步之認識與瞭解，兹舉實 施例配合圖式，詳細說明如下： 【實施方式】 本創作之發光二極體反射環以及其與基板之結合構 造，如第3圖所示，該發光二極體，包括：一氧化鋁基 板3、一設於氧化鋁基板3上方之反射環4、一設於基板 上端表面之發光二極體晶片5、以及一設於反射環上端 7 M337845 之光學透鏡6。 如圖所示，反射環4係氧化鋁等陶瓷材質，其和氧 化鋁基板3之間係以耐高溫之含有氧化矽成份的結合劑 7(如尚溫玻璃膠）結合，藉此得因應高功率發光二極體之 高溫環境。 如圖所示，反射環4係氧化鋁等陶瓷材質，其和氧 •化紹基板3之間係以财高溫之含有氧切成份的結合劑 • 如高溫玻璃膠）結合，#此得因應高功率發光二極體之 鲁向溫環境。 如圖所示，上述之反射環4，除了底面與基板3的 結合部位外’其他表面係被覆銀、金等金屬層Μ，立内 表面為球面42,可增加發光二極體之反射性能。'、 請參照第4圖所示’該反射環4,其内表面又可以 是錐面43之非直立面者。M337845 - VIII, new description: [New technical field] This creation is related to a kind of light-emitting diode, especially the substrate of the light-emitting diode and the reflective ring system ceramic material, with (4) high temperature (four) oxidation The bismuth component binder is bonded to meet the working temperature of the high-power light-emitting diode, and the inside of the reflection ring is a tapered surface or a jade surface, and the reflection characteristics are better. [Prior Art] With the advancement of integrated circuit fabrication technology, the design and production of electronic components continue to move toward a trend of miniaturization. In order to cope with the miniaturization of j c|ij process technology and the lightness and shortness of electronic information products, the technology of connecting to printed circuit boards has also evolved from plug-in to surface mount device (SMD). The light-emitting diode structure is as shown in FIG. i, and is disposed on a substrate 12 made of ismτ resin (Bismaieimide • Triazine Resin) with a light-emitting diode chip (chip or die) 1 i. (10) The electrode of ip or _ die) 11 is connected to the externally-connected copper foil 14 provided on the substrate by a wire, and a reflection ring 15 is disposed around the diode chip, and finally a resin is used. 16 encapsulates the diode wafer U and the wires 13. The advantage is that the package can be applied to a large number of light-emitting diode chips, and the production cost is low; but the disadvantage is that the resin is not a good heat-conducting material, and the high heat generated by the wafer u must rely on (4) 14 to be distributed. The combination of the electrical and cooling channels is not suitable for high power LEDs. In order to improve the above-mentioned deficiency, the manufacturer has proposed a package structure of a high-power light-emitting diode wafer in which a substrate and a reflector are used as heat sinks. Referring to FIG. 2, it is mainly to form an electrically connectable channel 22 by using a surface of a metal substrate 21, and a diode wafer 23 is disposed at the center of the metal substrate 21, and the upper end of the metal substrate 21 is further provided with a hole at the center. The reflection ring 24 is formed on the central channel 241 of the reflection ring 24 by an optical mirror cover 50. The metal substrate 21 and the reflection ring 24 are made of a metal material having high-temperature conduction but electrical insulation. Since the metal substrate 21 and the reflection ring 24 are both made of a metal material, only a low-temperature resin or a close-knit adhesive can be used for bonding to each other. When the operating temperature of the light-emitting diode is higher and higher, the bonding agent such as a low-temperature resin is easily deteriorated by high heat, and the adhesiveness is relatively lowered, resulting in separation of the substrate and the reflection ring, causing damage to the wafer. As shown in the figure, the reflection ring 24 is seen, and the inner central passage 241 is an upright cylindrical shape, and the reflection effect of the vertical reflection surface is poor, which also hinders light refraction and heat dissipation. [New content] The creators, in view of the shortcomings of the prior art, are engaged in the manufacturing experience and technical accumulation of electrolytic capacitors, and have studied the methods of the above two decisions for the above-mentioned shortcomings. After continuous research, experimentation and improvement, Finally developed 6 M337845 * to count this creation. This 'this creation is intended to provide a combination of a light-emitting diode reflector ring and a soil-sand plate' to use a 2-temperature-resistant bismuth oxide-containing bond between the substrate and the reflection ring (such as high-temperature glass glue). The second objective of the present invention is to provide a light-emitting diode reflection ring and a combination structure thereof with a substrate, which is a combination of a bottom surface of a ceramic material such as alumina and a metal substrate. Other surfaces of the scent can be coated with a metal layer such as silver or gold. A further object of the present invention is to provide a light-emitting diode reflective ring with a combination of a structure and a substrate, such that the inner surface of the reflective ring can be a spherical surface or a tapered surface to increase the reflection function of the light-emitting diode. . Another object of the present invention is to provide a light-emitting diode reflective ring and a combination thereof with a substrate, the substrate of which is also made of a material such as alumina or nitride. φ is a member of the review committee can make a further understanding and understanding of the purpose, shape, structure, cleavage features and effects of the creation, and the following examples are combined with the diagram, which are described in detail as follows: [Embodiment] The light-emitting diode reflective ring and its combined structure with the substrate, as shown in FIG. 3, the light-emitting diode comprises: an aluminum oxide substrate 3, a reflection ring 4 disposed above the alumina substrate 3, and a set A light-emitting diode chip 5 on the upper end surface of the substrate, and an optical lens 6 disposed on the upper end of the reflection ring 7 M337845. As shown in the figure, the reflection ring 4 is made of a ceramic material such as alumina, and is bonded to the alumina substrate 3 with a high-temperature resistant cerium oxide-containing binder 7 (for example, a glass paste). The high temperature environment of the power LED. As shown in the figure, the reflection ring 4 is made of a ceramic material such as alumina, and it is combined with the oxygen-containing substrate 3 with a high-temperature bonding agent containing oxygen-cutting components, such as high-temperature glass glue. Lu light environment of high power light-emitting diodes. As shown in the figure, the reflection ring 4 is covered with a metal layer such as silver or gold except for the joint portion between the bottom surface and the substrate 3. The inner surface of the reflection ring 4 is a spherical surface 42 to increase the reflection performance of the light-emitting diode. 'Refer to the reflection ring 4 shown in Fig. 4, the inner surface of which may be the non-erect surface of the tapered surface 43.
由上述之構成’由於基板3和 陶瓷材質結合，能使用且古#一、田^ 竹虱化鋁 結合劑黏結。 L有耐❸皿特性之高溫玻璃膠等 透過反射環4 光二極體射出之光 昇散熱性。 之内表面改為球面或錐面，能增加發 線的反射效能，減少熱能的積聚，提 凊參照第5圖所示，係本 以及其與基板之^極體反射環 圖所示，由於反射：：、反射裱的另-實施例，如 央通道為直管通道’可直接令其内部中 81直接切割即可黏結於基板上使 8 M337845 用，無需再對反射環内壁進行二次加工 綜合以上所述，本創作之發光二極 與基板之結合構造，確實 反射環以及其 既未見於任何刊物’且市面：：：= 創新構造’其 ’是以，其具有新顆性應無疑慮未==似的產品 之獨特特徵以及功能遠非習用 _ :所具有 之申嘖要株 我國專利法有關創作專利 要件之規疋，乃依法提起專利申嘖。 例，若需^^^上料者乃是切㈣佳具體的實施 仍::出所作之改變，其產生之功能作用 之範固内，合；二…盘之精神時’均應在本新$ M337845 【圖式簡單說明】 第ϊ圖為習見發光二極體之逢、 第2圖為另一習見發封裝結構剖面圖。 ”圖為本創作之封裝：構裝結構剖面圖 第4圖為本創作之另一實施例剖面圖。 第5圖為本創作之反射環之另一實施例圖。 【主要元件符號說明】 :發光二極體晶片 13 :導線 15 :反射環 21 :金屬基板 23 :二極體晶片 241 :中央孔道 3 ·基板 41 :金屬層 43 ·錐面 6 :光學透鏡 8 :反射環 12 :基板 14 :銅箔 16 :樹脂 22 :槽道 24 :反射壤 25 :光學鏡罩 4 :反射環 42 :球面 5 :發光二極體晶片 7 :結合劑 81 :直管通道The composition of the above is due to the combination of the substrate 3 and the ceramic material, and it can be used and bonded with the ancient #一,田^ bamboo aluminum bonding agent. L has a high-temperature glass glue that is resistant to the characteristics of the dish. The light emitted from the photodiode through the reflection ring 4 enhances heat dissipation. The inner surface is changed to a spherical surface or a tapered surface, which can increase the reflection performance of the hairline and reduce the accumulation of thermal energy. Referring to Figure 5, the reflection of the system and its reflection mirror with the substrate is shown by reflection. ::, another embodiment of the reflection 裱, such as the straight channel of the central channel can directly cut the inner 81 of the inner can be bonded to the substrate to make 8 M337845, no need to re-process the inner wall of the reflection ring. As mentioned above, the combination of the light-emitting diode and the substrate of the present invention, the true reflection ring and its neither are seen in any publication 'and the market:::= innovative structure' is ', its new nature should be undoubtedly == The unique features and functions of the products are far from being used _: The application for the patents of the patent law in China is to apply for patents in accordance with the law. For example, if you need to ^^^ the material is cut (four), the specific implementation is still:: the change made, the function of the function is the same, the second; the spirit of the disk should be in this new $ M337845 [Simple description of the figure] The second picture shows the light-emitting diodes, and the second picture shows a sectional view of another package. Fig. 4 is a cross-sectional view showing another embodiment of the creation. Fig. 5 is a view showing another embodiment of the reflection ring of the present invention. Light-emitting diode wafer 13: Conductor 15: Reflecting ring 21: Metal substrate 23: Diode wafer 241: Center hole 3 • Substrate 41: Metal layer 43 • Conical surface 6: Optical lens 8: Reflecting ring 12: Substrate 14: Copper foil 16: Resin 22: Channel 24: Reflective soil 25: Optical mirror cover 4: Reflecting ring 42: Spherical surface 5: Light-emitting diode wafer 7: Bonding agent 81: Straight tube passage