TWM337844U - Large-power LED - Google Patents

Large-power LED Download PDF

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Publication number
TWM337844U
TWM337844U TW96221320U TW96221320U TWM337844U TW M337844 U TWM337844 U TW M337844U TW 96221320 U TW96221320 U TW 96221320U TW 96221320 U TW96221320 U TW 96221320U TW M337844 U TWM337844 U TW M337844U
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TW
Taiwan
Prior art keywords
led
metal
casing
power
window
Prior art date
Application number
TW96221320U
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Chinese (zh)
Inventor
zhi-wen Qiu
Original Assignee
Kingbright Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kingbright Electronic Co Ltd filed Critical Kingbright Electronic Co Ltd
Priority to TW96221320U priority Critical patent/TWM337844U/en
Publication of TWM337844U publication Critical patent/TWM337844U/en

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Description

M337844 八、新型說明: 【新型所屬之技術領域】 、 本創作係關於一種LED之結構,特別是關於一種大功率 L E D之結構。 ‘ 【先前技術】 LED封裝方法、材料和封裝設備的選用主要是由晶 -片的外形、電氣/機械特性、精度和單價等因素決定的。 led產業經過數十年的發展,經過了支架式l仙(^以 led)、音通片式 LED(Chip SMD LED)、功率 L仙(p〇wer L仙) 及大功率LED(High P〇wer LED)等發展過程,支架式LED 和普通片4 LED的額定順向工作電流是小於3〇mA,功率 LED的額定順向工作電流是在3〇〜2〇〇mA之間大功率up 的額定順向工作電流是大於200mA。 以封裝形式而言,大功率LED係屬於表面安裝裝置 (Surface M〇unt Device,SMD)之形式,因為針對大功率 # led的散熱需求,該LED並未採用散熱較差之過孔插件形 式的封裝,而採用散熱較佳之表面安裝裝置的形式封裝。 .為了能更好的運用大功率LED,現今業界皆在研究如何改 .善大功率LED的散熱問題。 ,^圖1為習知大功率LED之外形示意圖,圖2為習知大功 率LED之金屬支架結構示意圖。如圖i、2所示,作為大 功率LED 20之外部電性連接之金屬支架22的導電端μ 係以插件式的形式固焊於金屬基板(未繪示)上,金屬支架 22形成在殼體26之内部處的部分(圖2中虛線圓圈内部) 现總槽鶴313561細35615(改請新型) 5 M337844 二狹二片敎狀’如此之結構’可作為金屬散熱層之金屬支 :2的政熱面積較少,在製成成品後,若通以小電流時, LED 20之内部led晶片(未繪示)處並無溫度過高 J 通以大電流時’大功率LED2°之金屬支架22的 二=f,使得大功率LED 20之内部⑽晶片處的溫 二二同’致使LED晶片與金屬支架22電性連接處斷 果大力率LED 20永久損壞而無法再使用。因此, 白知大功率LED因金屬支牟的椹1 1使的構以而造成溫升的問題,致 土:ίί 密度’也影響了大功率⑽之光通 =亚且’使用焊接方式的焊錫由於質軟、熔點低, L E 高溫且焊錫料從基板上剝離,使得 LED整體抗震性能差。 【新型内容】 盖的在於提供—種大功率⑽之結構,可以改 。放…、問碭,亚且改善焊錫焊接LED的問題。 ,據本創作之大功率LED,其一殼體形成一窗,數個金 S架分別形成在殼體的内部及外部,一 LED晶片在殼體 固的位置電性連接與固定於金屬支架上,金屬支竿 =殼=外部處,其可作為大料led外部的電性連接 :’其特徵為:金屬支架形成在殼體之内部處妾 為殼體内部之散熱層’金屬支架形成在殼體之外 導二=不小於散熱層的面積,以一鉚釘將金屬支架之 ¥屯☆而鉚接於一金屬基板上。 【實施方式】 326\總檔_3135615\93135615(改請新型) 6 M337844 圖3為本創作大功率LED之外形示意圖,目4為本創作 大功率LED之金屬支架結構示意圖。 :創作之大功率LED 40之殼體46形成一窗48,金屬 42分別形成在殼體46的内部及外部,⑽晶片(未 鉍不)殼體46之窗48的位置電性連接與固定於金屬支架 盃屬支杀42开> 成在设體46外部處之導電端44可 大功率LED 40外部的電性連接端,金屬支架42形成 设體46之内部處的部分(圖4中虛線圓圈内部)係呈寬 片狀’以做為殼體46内部之散熱層,金屬支架42之導電 端=的面積不小於散熱層的面積,且鉚接於一金屬基板 I未緣示)上。 之殼體46之窗48的上方可利用高周波 46 ' H一光學透鏡52 ’並以-透光膠填滿殼體 可以二48,在殼體46與透光膠之間可加裝-金屬碗,其 的光反射率,以增加大功率_〇 ^ 2度°*中’殼體46可使用可塑性高溫塑料之材 严透鏡52可使用環氧樹脂之材料,透光膠可使用 銥虱樹脂或矽膠。 【π 圖圖二=Γ率LED組裝在條形金屬基板之俯視 固5B為本創作大功率LED組裴 視圖,圖6為本創作大功率LED έ且;^金屬基板之側 俯視圖,圖7為本創作大=:=形金屬基板之 俯#网丄 刀半纽裝在圓形金屬基板之 ::圖:广圖式所示,金屬支架42之導電端“可反: 一鉚針’圖8所示)鉚接於各種形狀(如條形、圓 326V總檔\93\93135615\93135615(改請新型) ? M337844 弧形、圓形)之金屬基板6〇上,可使大功率LED 4〇固定 且電性連接於金屬基板60上。 本創作之大功率LED因金屬支架的寬片設計,因而增加 其散熱面積,且金屬支架的導電端面積大,與金屬基板鉚 接後更私加了放熱效果,增長了大功率led的使用壽命, 致使可以提高大功率LED的卫作電流密度,而不受大功率 LED之光通1的限制。並且,使用鉚接方式將[仙之金屬 支木牢牢地固定在金屬基板,可抗受高溫,不易使L肋從 基板上剝離,且提高LED整體抗震性能。 藉由上述具體實施例之詳述,係希望更加清楚描述本創 作之特徵與精神’並非用以上述所揭露的較佳具體實施例 ,對本創作之料加以限制,相反的,其目的是希望能涵 蓋各種改變及具有相等性安排於本創作所欲申請之專 範圍的範疇内。 【圖式簡單說明】 圖1為習知大功率LED之外形示意圖; 圖2為習知大功率LED之金屬支架結構示意圖; 圖3為本創作大功率LED之外形示意圖; 圖4為本創作大功率LED之金屬支架結構示意圖; 圖圖5A為本創作大功率LED組裝在條形金屬基板之俯视 圖圖5B為本創作大功率LED組裝在條形金屬基板之側视 圖6為本創作大功率L E D組裝在圓弧形金屬基板之俯视 326«\93\93135615\93135615(5^«) 8 M337844 圖, 圖7為本創作大功率LED組裝在圓形金屬基板之俯視 圖,及 '圖8為本創作大功率LED之金屬支架與金屬基板利用鉚 •釘鉚接之示意圖。 ,【主要元件符號說明】 • 20 :大功率LED 22 :金屬支架 _ 24 :導電端 26 :殼體 40 :大功率LED 42 :金屬支架 44 :導電端 46 :殼體 48 :窗 φ 52 :光學透鏡 60 :金屬基板 68 :鉚釘 326\總檔\93\93135615\93135615(改請新型) 9M337844 VIII. New description: [New technology field] This book is about the structure of an LED, especially about the structure of a high-power L E D. ‘ 【Priority】 The choice of LED packaging methods, materials and packaging equipment is mainly determined by the shape, electrical/mechanical characteristics, precision and unit price of the crystal. After decades of development, the led industry has passed the bracket type l (^ led), the audio chip LED (Chip SMD LED), the power L (p〇wer L Xian) and the high power LED (High P〇 The development process of wer LED), the rated forward working current of the bracket LED and the ordinary 4 LED is less than 3 mA, and the rated forward working current of the power LED is between 3 〇 2 〇〇 mA. The rated forward operating current is greater than 200mA. In terms of package form, high-power LEDs are in the form of Surface Mount Devices (SMD), because the LEDs are not packaged in the form of vias with poor heat dissipation for high-power #led heat dissipation requirements. It is packaged in the form of a surface mount device with better heat dissipation. In order to make better use of high-power LEDs, the industry is now studying how to change the heat dissipation problem of high-power LEDs. Fig. 1 is a schematic diagram showing the external shape of a conventional high-power LED, and Fig. 2 is a schematic view showing the structure of a metal bracket of a conventional high-power LED. As shown in FIG. 2 and FIG. 2, the conductive end μ of the metal bracket 22, which is externally electrically connected to the high-power LED 20, is soldered to a metal substrate (not shown) in a plug-in form, and the metal bracket 22 is formed in the shell. The part inside the body 26 (inside the dotted circle in Figure 2) is now the total slot crane 313561 fine 35615 (renamed new type) 5 M337844 Two narrow two-piece braided 'such a structure' can be used as a metal heat sink metal branch: 2 The area of political heat is small. After the finished product is finished, if there is a small current, the internal LED chip of the LED 20 (not shown) is not overheated. When the current is high, the metal of the high-power LED is 2°. The second=f of the bracket 22 causes the temperature at the inner (10) wafer of the high-power LED 20 to cause the LED chip to be electrically connected to the metal bracket 22 to be permanently damaged. The LED 20 is permanently damaged and can no longer be used. Therefore, the white high-power LED is caused by the structure of the metal support, which causes the temperature rise. The soil: ίί density also affects the high-power (10) light pass = sub- and 'welding solder. Due to its soft texture and low melting point, LE is high temperature and the solder material is peeled off from the substrate, which makes the overall seismic performance of the LED poor. [New content] The cover is to provide a high-power (10) structure that can be changed. Put..., ask, and improve the problem of soldering LEDs. According to the high power LED of the present invention, a casing forms a window, and a plurality of gold S frames are respectively formed inside and outside the casing, and an LED chip is electrically connected and fixed to the metal bracket at a position fixed by the casing. , metal support = shell = external, it can be used as an electrical connection outside the large material led: 'It is characterized in that the metal bracket is formed inside the casing and is the heat dissipation layer inside the casing. The metal bracket is formed in the shell. The outer surface of the body is not less than the area of the heat dissipation layer, and is riveted to a metal substrate by a rivet. [Embodiment] 326\总档_3135615\93135615 (renamed new type) 6 M337844 Figure 3 is a schematic diagram of the external shape of the high-power LED, and the purpose of this is to create a metal bracket structure diagram of the high-power LED. The housing 46 of the high-power LED 40 is formed as a window 48. The metal 42 is formed inside and outside of the housing 46, respectively. (10) The position of the window 48 of the wafer 46 is electrically connected and fixed to the position of the window 48. The metal bracket cup is smashed and opened 42. The conductive end 44 at the outer portion of the body 46 can be electrically connected to the outside of the high-power LED 40, and the metal bracket 42 forms a portion at the inner portion of the body 46 (the dotted line in Fig. 4) The inside of the circle is in a wide sheet shape as the heat dissipation layer inside the casing 46, and the conductive end of the metal bracket 42 has an area not less than the area of the heat dissipation layer, and is riveted to a metal substrate I. The upper portion of the window 48 of the casing 46 can be filled with a high frequency 46 'H-optical lens 52' and filled with a light-transmissive glue. The casing can be installed between the casing 46 and the light-transmitting glue. , its light reflectivity to increase the power _ 〇 ^ 2 degrees ° * in the 'housing 46 can be used plastic high-temperature plastic material lens 52 can use epoxy material, light-transmitting glue can use enamel resin or Silicone. [π 图 图 图 = Γ LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED The creation of the large =: = metal-shaped substrate of the # 丄 半 half of the half-mounted on the circular metal substrate:: Figure: the wide-type display, the conductive end of the metal bracket 42 "reversible: a rivet" Figure 8 Rugged in various shapes (such as strip, circle 326V total file \93\93135615\93135615 (rename new)? M337844 curved, round) metal substrate 6〇, can make high-power LED 4〇 fixed And electrically connected to the metal substrate 60. The high-power LED of the present invention increases the heat dissipation area due to the wide-piece design of the metal bracket, and the conductive end area of the metal bracket is large, and the heat dissipation effect is added after riveting with the metal substrate. The service life of the high-power LED is increased, so that the current density of the high-power LED can be improved without being restricted by the light-passing of the high-power LED. Moreover, the riveting method is used to firmly secure the metal branch of the fairy Fixed on a metal substrate, resistant to high temperatures, not easy to make L ribs from the base The upper part is peeled off and the overall seismic performance of the LED is improved. It is to be understood that the features and spirit of the present invention are more clearly described by the detailed description of the specific embodiments described above. The limitation, on the contrary, is intended to cover various changes and equivalences within the scope of the scope of the application. [Simplified Schematic] FIG. 1 is a schematic diagram of a conventional high-power LED; 2 is a schematic diagram of the metal bracket structure of the conventional high-power LED; Figure 3 is a schematic diagram of the external shape of the high-power LED; Figure 4 is a schematic diagram of the metal bracket structure of the high-power LED; Figure 5A is a high-power LED assembly The top view of the strip-shaped metal substrate is shown in Fig. 5B. The side view of the high-power LED assembled on the strip-shaped metal substrate is 6. The high-power LED is assembled on the circular-shaped metal substrate. 326«\93\93135615\93135615( 5^«) 8 M337844 Figure, Figure 7 is a top view of the high-power LED assembled on a circular metal substrate, and 'Figure 8 is a high-power LED metal bracket and metal substrate Schematic diagram of riveting and nail riveting. , [Description of main components] • 20: High power LED 22: Metal bracket _ 24: Conductive end 26: Housing 40: High power LED 42: Metal bracket 44: Conductive end 46: Housing 48: window φ 52 : optical lens 60 : metal substrate 68 : rivet 326 \ total file \93\93135615\93135615 (renewed new type) 9

Claims (1)

M337844 九、申請專利範圍: 1. 一種大功率led,其一殼體形成一窗,數個金屬支架 、分別形成在該殼體的内部及外部,一 LED晶片在該殼體之 窗的位置電性連接與固定於該些金屬支架上,該些金屬支 架形成在該殼體外部處之導電端可作為該大功率LED外 ,部的電性連接端,其特徵為: '該些金屬支架形成在該殼體之内部處係呈寬片狀,以做 鲁為該殼體内部之散熱層,該些金屬支架之導電端的面積不 小於散熱層的面積,以-鉚釘將該些金屬支架之導電端柳 接於一金屬基板上。 2.如申請專利範圍f μ所述之大功率led,其中,該 ^體之窗的上方可制高周波溶接方式來封裝—光學透 鏡’並以一透光膠填滿該殼體之窗。 3·如中請專利範圍第2項所述之大功率⑽, 设體可使料塑性高溫塑料之材料,該 μ 氧樹脂之材料,該透光膠可使用環氧樹脂或環 326\總檔\93\93135615\93135615(改請新型)M337844 IX. Patent application scope: 1. A high-power LED, a casing forms a window, and a plurality of metal brackets are respectively formed inside and outside the casing, and an LED chip is electrically located at the window of the casing. The metal connection is fixed to the metal brackets, and the conductive ends formed at the outer portion of the metal bracket can be used as the electrical connection ends of the high-power LED, and the characteristics are: 'The metal brackets are formed The inside of the casing is in the form of a wide sheet to make the heat dissipation layer inside the casing, and the conductive end of the metal bracket has an area not less than the area of the heat dissipation layer, and the metal bracket is electrically conductive by the rivet The end will be connected to a metal substrate. 2. The high power LED according to the patent application range f μ, wherein the upper portion of the window can be made into a high-frequency-dissolving manner to encapsulate the optical lens and fill the window of the casing with a light-transmissive glue. 3. The high power (10) as described in item 2 of the patent scope, the material of the plastic high temperature plastic material, the material of the μ oxygen resin, the epoxy resin or the ring 326\ \93\93135615\93135615 (renewed new)
TW96221320U 2004-11-19 2004-11-19 Large-power LED TWM337844U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3184877A1 (en) 2015-12-25 2017-06-28 LongWide Technology Inc. Led illumination apparatus and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3184877A1 (en) 2015-12-25 2017-06-28 LongWide Technology Inc. Led illumination apparatus and manufacturing method thereof

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