M328666 八、新型說明： 【新型所屬之技術領域】 本創作公開了-種半導體器件的内引線結構，更具體 的，涉及半導體||件_引線結制橋接結構。 【背景技術】 内引線被歧用於半導體频電路、分立元器件和模 組等半導體器件的封裝中，以完成晶片與引線框架内引腳 的t接，如第1圖所示，晶片1通過内引線3與引線腳的 配線區21連接，形成半導體晶片1向外部交換傳遞電仲 的路徑。 m 目别的㈣線主要有金線、轉料料並借助專用設 備完成晶片和引線框架内引腳的連接。但隨著國際市場音 金價格的持續走高，全绩的士、士； > 、 借浐〜0 ί 越來越高，_線的設 又貝工j*上有很多局限性。於是，近些年來又開發 了用崎或合錢轉代錢和魏的 線能明顯降低成本和提高電性能 餘2mi丨’ lmil=aG()1英寸)在直接焊接的過程中 Γ問題，使得發展直徑4miI、5mii、6mii.·.銅線 二=°困難和停滞不前。具體的，通過銅線靡 成銅球’然後鋼球和晶片表面在一定溫度下，通過 ==施赠力、鱗波議侧，麵焊接目的。 得銅球成過程中，分子再結晶和銅球表面的氧化使 硬的崎31雜麵財料發生脫 圖斤不），或者擠掉被焊接晶片J表面的金屬 M328666 =二第2B圖所示)，甚至將金屬層11和晶片 打碎或㈣’·餘，嫌摘更加 = =?=:往又不能在成品測試中 表*金屬厚依靠增加晶片 ::= 週期和效率等。由於上述銅線直接 知接的工#應用存在 丧 用，無法魏錢。 L也心相大規模應 線作：導=低封裝成本，既需要用其他金屬代替金 此’、、、¥體益件的内引線，同時又要克服利用其他金 =内引線帶來的工藝上的缺陷、提高生產效率及產品可 罪性。 【創作内容】 為實現上述目的，本創作提供一種半導體器件的内引 線，構’包括絲電連線框架與裝載在所述引線框架 上晶片的内引線’其特徵在於：在所述晶片的表面對應與 引線連接的4接區域焊接有橋接結構，所述内引線焊接 在所述橋接結構上。 、所述橋接結構為金屬介質，具體的，為至少一個金球 戈至合金物形成的球狀介質。 士通過本創作所述的橋接結構，在銅材料等作為内引線 日^’銅引線焊接在所述金球上，這樣，金球起到了很好的 緩衝作用，避免了堅硬的銅球直接與晶片表面接觸，既徹 底解決有現有技術細銅線直接焊接在晶片表面的缺陷，也 M328666 :==提供了很好的解決方案，同時細 绩橋接^連接的内引線結構，可以代替金線作為内引 線’大大降低了封裝成本、提高了生產效率及產品可靠性。 以下將結合圖式對本創作的構思、具體結 特 技術效果作進一步說明，以充分地瞭解本創作的目的 徵和效果。 J曰的 f實施方式】 下面結合圖式進-步說明本創作的實施例。 3圖所示為本創作的半導體器件的内引線結構， 泉的配線區域21通過内引線3與晶片！形成電連 古。在對應連接㈣線3的晶片1麵轉顧域，設置 Λ引線框木2與晶片1的電連接。 在實^列中’銅線作為晶片！與引線框架2的配線區 1 U片上之别，利用金線焊接設備在晶片}表面焊接 對鑛鱗上_線3馳置和錄，在相庫位置 =求32。然後，再利用現有的工藝，將二 銅球31 ’在一定溫度下，通設 備施以壓力、超聲波能|的你田于後口又 卜m 將銅球31焊接在金球32 ，k樣至球32作為銅線和晶片表面之間的橋介質，避免 直接接觸到晶片表面，料發生脫焊，更不 、曰^ 打碎或打裂，金屬層11保持完好。因此， U孟球32作為橋接結構的緩衝作用，徹底解決了將銅球M328666 VIII. New description: [New technical field] This invention discloses an inner lead structure of a semiconductor device, and more specifically, a semiconductor||piece-lead junction bridge structure. BACKGROUND OF THE INVENTION Inner leads are used in the packaging of semiconductor devices such as semiconductor frequency circuits, discrete components, and modules to complete the t-connection of the pins in the wafer and the lead frame. As shown in FIG. 1, the wafer 1 passes. The inner lead 3 is connected to the wiring area 21 of the lead leg to form a path in which the semiconductor wafer 1 exchanges electricity to the outside. The m (4) line mainly has gold wires, transfer materials and special equipment to complete the connection of the pins in the wafer and the lead frame. However, as the price of gold in the international market continues to rise, the overall performance of taxis and taxis; >, borrowing ~0 ί is getting higher and higher, and there are many limitations on the _ line and the beijing j*. Therefore, in recent years, the development of the use of the exchange of money and Wei with the use of Qi or money can significantly reduce the cost and improve the electrical performance of the remaining 2mi丨 'lmil = aG () 1 inch) in the process of direct welding, making Development of diameter 4miI, 5mii, 6mii.. copper wire two = ° difficult and stagnant. Specifically, the copper ball is formed by a copper wire. Then the steel ball and the surface of the wafer are subjected to a certain temperature, and the force is applied by the ==, the scale wave is discussed, and the surface is welded. In the process of copper ball formation, the recrystallization of molecules and the oxidation of the surface of the copper ball cause the hard surface of the surface of the soldered wafer J to be removed, or the metal M328666 of the surface of the soldered wafer J is removed. Even breaking the metal layer 11 and the wafer or (4) '·余, swearing more = =?=: can not be in the finished product test * metal thickness depends on increasing the wafer:: = cycle and efficiency. Due to the sinful use of the above-mentioned copper wire directly connected to the application, it is impossible to make money. L also has a large-scale response to the heart: lead = low package cost, it is necessary to replace the inner lead of the ',, and ¥ body parts with other metals, and at the same time overcome the process of using other gold = inner leads. Defects, increased productivity and product guilt. [Creation Contents] In order to achieve the above object, the present invention provides an inner lead of a semiconductor device, which comprises a wire connection frame and an inner lead of a wafer loaded on the lead frame, characterized in that: on the surface of the wafer A bridge structure is soldered to the 4-joint region connected to the lead, and the inner lead is soldered to the bridge structure. The bridging structure is a metal medium, specifically, a spherical medium formed of at least one gold ball to an alloy. Through the bridging structure described in this creation, the copper material is soldered on the gold ball as an inner lead wire, so that the gold ball plays a good buffering role, avoiding the hard copper ball directly The surface contact of the wafer not only completely solves the defect that the prior art thin copper wire is directly soldered on the surface of the wafer, but also the M328666:== provides a good solution, and at the same time, the internal lead structure of the bridged connection can be used instead of the gold wire. The inner lead' greatly reduces the cost of packaging, increases production efficiency and product reliability. In the following, the concept of the creation and the specific technical effects of the creation will be further explained in conjunction with the schema to fully understand the purpose and effect of the creation. The implementation of the f is described below with reference to the drawings. 3 shows the inner lead structure of the semiconductor device of the present invention, and the wiring area 21 of the spring passes through the inner lead 3 and the wafer! Forming electricity. The electrical connection between the lead frame 2 and the wafer 1 is set in the wafer 1 side of the corresponding connection (4) line 3. In the actual column, 'copper wire as a wafer! On the surface of the wiring area 1 U of the lead frame 2, the surface of the wafer is soldered on the surface of the wafer by a gold wire bonding apparatus, and the _ line 3 is mounted and recorded at the position of the phase library = 32. Then, using the existing process, the two copper balls 31 'at a certain temperature, through the device to apply pressure, ultrasonic energy | your field in the back mouth and then m to weld the copper ball 31 to the gold ball 32, k-like to The ball 32 serves as a bridge medium between the copper wire and the surface of the wafer, avoiding direct contact with the surface of the wafer, and the material is desoldered, less, broken or cracked, and the metal layer 11 remains intact. Therefore, U Mengqiu 32 acts as a buffer for the bridge structure and completely solves the copper ball.
在具體實施例中，可以用其他金屬諸如銘替代鋼作為 内引線。還可以麟如金合金物焊接在晶片表面作為橋接 結構。所猶接結構不限於雜，還可為方形或不規二 狀等任意形狀。 乂 一所述的橋接結構可應用在半導體積體電路、半導體八 立7L益件和半導體積體電路模組的㈣線鍵合面上 以用在 MOSFET 系列，JFET、SCR、IGBT、 " 體荨功率器件上。 之内 M328666 31直接丈〒接到晶片上的工藝缺陷。 夕具體的，如第5圖所示，焊接的金球32可以為一個或 多個’以迭域並方式焊接在晶片丨的表面焊接區域 内，内引線3的銅球31焊接在並列或迭加的金球％上， 構成本創作的内引線結構。 第6圖為本創作内引線結構裝配的俯視圖，由圖可見， 在晶片1表面對應銅線3焊接的位置，焊接有金球32，金 球32分佈焊接在晶片！上，銅線3的銅球3ι焊接在所述 金球32上’使晶片1與引線框架2形成電連接。 二極體、電 一 #上所述’本制書中所述的只是本創作的較佳 Π太以上實施例僅用以說明本創作的技術方案而_ 制。凡本肋倾巾觀人貞财_ =通過邏輯分析、推理或者有限的實驗 技術方案’皆應在本_的申請翻細保護範圍 M328666 圖式簡單說明】 第1圖為現有技術的半導體器件 第2A、2B圖為現有的鋼線烊接工藝的 第3圖為本創作的半導體哭 “心圖， 繁4A犯闰W 的内引線結構示意圖； 意圖 弟B ®林創作叫線結構巾橋接結構的放大示 弟5圖為本創作的一個且體In a particular embodiment, other metals, such as Ming, may be used instead of steel as the inner leads. It is also possible to weld a gold alloy such as a gold alloy to the surface of the wafer as a bridge structure. The structure to be connected is not limited to impurities, and may be any shape such as a square or a random shape. The bridge structure described in the first embodiment can be applied to the semiconductor integrated circuit, the semiconductor eight-litre 7L component, and the (four) wire bonding surface of the semiconductor integrated circuit module for use in the MOSFET series, JFET, SCR, IGBT, "荨 Power devices. Within M328666 31, the process defects on the wafer are directly received. Specifically, as shown in FIG. 5, the soldered gold balls 32 may be soldered in the surface soldering area of the wafer cassette by one or more 'sands, and the copper balls 31 of the inner leads 3 are soldered in parallel or stacked. The added gold ball% constitutes the inner lead structure of the creation. Fig. 6 is a plan view showing the assembly of the inner lead structure of the present invention. As can be seen from the figure, at the position where the surface of the wafer 1 is welded to the copper wire 3, the gold ball 32 is welded, and the gold ball 32 is welded to the wafer! Upper, the copper balls 3 of the copper wire 3 are soldered to the gold balls 32 to electrically connect the wafer 1 to the lead frame 2. The above description of the present invention is only a preferred embodiment of the present invention. The above embodiments are only used to illustrate the technical solution of the present invention. Anything that is arbitrarily confusing _ _ _ through logic analysis, reasoning or limited experimental technical solutions 'all should be in this _ application to refine the scope of protection M328666 simple description of the schema] Figure 1 is a prior art semiconductor device 2A, 2B is the third figure of the existing steel wire splicing process, which is a schematic diagram of the inner lead structure of the semiconductor crying "heart map, the genre 4A 闰W; the intentional brother B ® lin is called the line structure towel bridging structure Zoom in to show that the younger brother 5 is a part of the creation
士+立m · 、體貫苑例的内引線結構的放 /V>1; fwj，士+立m · , the inner lead structure of the body court example /V>1; fwj,
第6圖為本創作内引線結構裝配的俯視 【主要元件符號說明】 1 2 3 11 21 31 32 晶片 $ I線框架 内引線 金屬層 配線區域 麵I球 金球 10Figure 6 is a top view of the assembly of the inner lead structure of the creation. [Main component symbol description] 1 2 3 11 21 31 32 Wafer $ I-line frame Inner lead Metal layer Wiring area Surface I ball Golden ball 10