M317594 八、新型説明: 【新型所屬之技術領域 本新型是有關於一種曝光系統與光罩裝置，特別是指 種半導體微影曝光系統與光罩裝置。 【先前技術】 為降低生產成本與提高晶片反應速度，許多晶圓廠都 致力於在一晶片中設置最多之電晶體，而其中影響晶片之 電曰日體數量夕养的便疋光微影術（〇ptieal lith〇gmphy)。但 近年來光微影術已逐漸遇到頻頸，隨著半導體元件尺寸的 不斷微縮，用以進行電路圖形之投影的光罩（ph〇t〇 mask) 上的孔隙寬度與孔隙間之間距亦需相對縮小，以便於晶圓 ^ =之光阻劑層_L曝光形成具有奈米、線寬的電路圖形，但 疋當孔隙寬度與兩孔隙之間距過小時，光線穿透光罩時所 產生干涉與繞射現象，會嚴重影響曝光之成相品質，因此 可提升光U衫術之解析度已成為各晶圓廠極力發展的目 標。 【新型内容】 公制此本新型之目的，即在提供一種用於半導體光微 中，可職光㈣位不準及降低干涉與繞射等干擾 光罩f置可於I15上精確曝光形成細小線寬之電路圖形的 光來成^ ^ ^另目的’在於提供—種可於晶圓上精確曝 先W小線寬之電路圖形的微影曝光系統。 於是，本新型光罩裳置，可用以^ M317594 ^相配合構成-預定微影㈣至晶圓之圖樣。該等遮光板 ^τ^λt^^^^#^^^#H f ^ t # ^ ^ 5! Jt € ^ f ^ ^ f f ^ ^ ^ ^ ^ ia -Γ ^ ^ ^ 圓的第-曝光區，而第二遮光板具有多數相間隔並僅使穿 透該等第二微影區之光線可射向晶圓的第二曝光區。 I ,於疋本新型k影曝光系統，適用於設置在一半導體 '製私％纟兄中’而可對一頂面塗覆有光阻劑之晶圓進行微影 曝光，並包含一設置於晶圓上方並可產生射向晶圓之光線 的曝光光源、一設置於曝光光源與晶圓間且可使往下穿透 之光線聚焦射向晶圓頂面之預定曝光區域的透鏡裝置，及 一設置於曝光光源與透鏡裝置間之光罩裝置。該光罩裝置 &括-光罩，及局部部位可遮光之__第—與_第二遮光板 ，該光罩具有多數相間隔並可分別使光線往下穿透，且袓 配合構成一欲微影至晶圓之圖樣的第一與第二微影區，該 等遮光板是可彼此替換地單獨與該光罩縱向排列，且第一 遮光板具有多數相間隔並僅使穿透該#第_微影區之光線 可射向透鏡裝置的第一曝光區，而^ 間隔亚僅使穿透該等第二微影區之光線可射向透鏡裝置的 第二曝光區。 【實施方式】 有關本新型之前述及其他技術内容、特點與功效，在 M317594 • 以下配合參考圖式之二個較佳實施例的詳細説明中，將可 . 清楚的呈現。 在本新型被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 如圖1〜4所示，本新型微影曝光系統之第一較佳實施 例’可以設置於半導體製程環境中，而用以對一頂面被覆 有光阻劑（圖未示）之晶圓100進行微影曝光，而構成具 有細小線寬之電路圖樣（圖未示）。該微影曝光系統包含一 > 間隔設置於晶圓100上方之並可產生曝光所需之光的曝光 光源3、一間隔設置於曝光光源3與晶圓1〇〇間並可使光線 穿透之透鏡裝置4,及一間隔設置於曝光光源3與晶圓1〇〇 間之光罩裝置5。 在本實施例中，該透鏡裝置4具有二上、下間隔地設 置於曝光光源3下方，且分別位於光罩裝置5上、下方之 透鏡單元41，但實施時，該透鏡裝置4可不設置光罩裝置 5上方的透鏡單元41，僅於光罩裝置」與晶圓間設置 透鏡單元41 ’但貫施時不以此為限。由於該曝光光源3 與透鏡裝置4皆為習知構件，且非本新型之封作重點，因 此不再詳述。 該光罩裝置5是設置於該等透鏡單元41間，並包括一 光罩51、一第一遮光板52，及一第二遮先板53。該光罩 Η具有多數彼此緊密間隔排列且可分別使光往下穿透之第 微影區5Π與第二微影區512，且該等微影區5ii、m 相配合構成一預定微影複製到晶圓1〇〇上的電路圖樣51〇。M317594 VIII. New description: [New technology field] The present invention relates to an exposure system and a reticle device, in particular to a semiconductor lithography exposure system and a reticle device. [Prior Art] In order to reduce the production cost and increase the speed of wafer reaction, many fabs are working on setting up the largest number of transistors in a wafer, and the number of cells that affect the number of cells in the wafer is (〇ptieal lith〇gmphy). However, in recent years, photolithography has gradually encountered a frequency neck. As the size of semiconductor components continues to shrink, the gap between the aperture width and the aperture on the reticle (mask) used to project the circuit pattern is also It needs to be relatively narrowed so that the photoresist layer _L of the wafer can be exposed to form a circuit pattern having a nanometer and a line width, but when the pore width is too small between the two pores, the light is generated when the light is passed through the mask. Interference and diffraction phenomenon will seriously affect the quality of the exposure phase. Therefore, the resolution of the optical U-shirt has become the goal of the development of various fabs. [New content] Metrics The purpose of this new type is to provide a kind of thin film for semiconductor light micro-distribution, which can be used for precise exposure of I15 on the I15. The light of the wide circuit pattern is ^^^the other purpose is to provide a lithography exposure system that can accurately expose the circuit pattern of W small line width on the wafer. Therefore, the novel reticle is placed, and can be formed by the combination of ^ M317594 ^ - predetermined lithography (four) to the pattern of the wafer. The visor ^τ^λt^^^^#^^^#H f ^ t # ^ ^ 5! Jt € ^ f ^ ^ ff ^ ^ ^ ^ ^ ia -Γ ^ ^ ^ The first exposure area of the circle And the second visor has a plurality of spaced intervals and only allows light that penetrates the second lithography regions to be directed toward the second exposure region of the wafer. I. In this new k-ray exposure system, it is suitable for setting in a semiconductor 'customer' and can perform lithographic exposure on a top surface of a wafer coated with a photoresist, and includes a An exposure light source above the wafer and capable of generating light directed at the wafer, a lens device disposed between the exposure light source and the wafer and capable of focusing the light penetrating downward toward a predetermined exposure area of the top surface of the wafer, and A reticle device disposed between the exposure source and the lens device. The reticle device & includes a reticle, and a partial opaque __first-and _second visor, the reticle having a plurality of spaced intervals and respectively allowing light to pass downward, and the 袓 fit constitutes a The first and second lithography regions to be lithographically patterned to the wafer, the visors are separately and longitudinally arranged separately from the reticle, and the first visor has a plurality of intervals and only penetrates The light of the #第_ lithography zone can be directed to the first exposure zone of the lens device, and the spacers can only direct light that penetrates the second lithography zone to the second exposure zone of the lens device. [Embodiment] The foregoing and other technical contents, features, and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. As shown in FIGS. 1 to 4, the first preferred embodiment of the novel lithography exposure system can be disposed in a semiconductor processing environment for wafers coated with a photoresist (not shown) on a top surface. 100 is subjected to lithography exposure to form a circuit pattern having a small line width (not shown). The lithography exposure system includes an exposure light source 3 disposed above the wafer 100 and capable of generating light required for exposure, and an interval between the exposure light source 3 and the wafer 1 and allowing light to penetrate. The lens device 4 and a mask device 5 are disposed between the exposure light source 3 and the wafer 1 . In the present embodiment, the lens device 4 has two lens units 41 disposed above and below the exposure light source 3 and located above and below the mask unit 5, but in practice, the lens unit 4 may not be provided with light. The lens unit 41 above the cover device 5 is only provided with the lens unit 41' between the photomask device and the wafer, but is not limited thereto. Since the exposure light source 3 and the lens device 4 are both conventional members and are not the focus of the present invention, they will not be described in detail. The reticle device 5 is disposed between the lens units 41 and includes a reticle 51, a first visor 52, and a second louver 53. The reticle has a plurality of lithographic regions 5 Π and a second lithography region 512 which are closely spaced from each other and can respectively penetrate the light downward, and the lithographic regions 5ii, m cooperate to form a predetermined lithography copy. The circuit pattern on the wafer 1 is 51〇.
龜 M317594 該光罩5 1是由一可透光材料製成之片狀光罩本體513，及 一被覆固定於光罩本體5 13底面之不透光第一遮先體514 組合而成，且該第一遮光體5 14於光罩本體5丨3上圍繞界 定出該等微影區 511、512 /^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 、 該第一遮光板52具有多數相間隔且可分別使光線往下 穿透之第一曝光區521，第二遮光板53則具有多數相間隔 且可使光線往下穿透之第二曝光區531。該等遮光板52、 53疋分別由一可供光線往下穿透之平板狀板本體522、53 ，及一被覆固定於板本體522、532頂面之不透光第二遮兴 體523、533組合而成，且該第二遮光體523、533會於相 對應板本體522、532上圍繞界定出該等曝光區521、531。 在本實施例中，該等遮光體514、523、533皆為金屬 鉻（Cr)，但實施時，該等透光體514、523、533材質皆不 以此為限，只要可阻止曝光光源3產生的光穿透即可。 該等遮光板52、53是能夠彼此替換地單獨與該光罩51 , f 52 ^ 53 51 , 521、531會分別對應位於該等微影區5ii、们2正下方。亦 第^光板52縱向平行㈣ ^ 52 ^ # ^ ^ ^ ^ 523 ^ ^ ^ T f ^ ^ f ^ ^ 微影區512之光键择/士 ϋ + ^ 尤線祜住，僅讓穿透第一微影區5Γ1之井坡 ^ T f it It - ^ ^ ^ 521 ^ ^ ^ 41 〇 ^ ^ ^ ^ 53 533 T f it It # f M317594 區512之光線稽住，僅讓穿透該等第二微薇 可往^透該等第二曝光區531而射向透鏡界^ f猎f衫遮光板52、53分職能使穿透該等第一微影 第二微影區512的光線射向透料 =提同牙透光罩裝置5並往下射向透鏡單元❿之光線間的 間距’而降低干涉與繞射千擾的現象。 、，圖2 5所不’當要以上述微影曝光系統對被覆 有光阻劑之晶圓·頂面進行微影曝光時，其步驟如下： 、步驟(-):將該微影曝光系統設置於一製程環境中， 並對應位於晶圓100上方，且將晶圓100與光罩裝置5之 光罩Η相互對位於曝光光源3與上方透鏡單元41的下方 ，使曝光光源3產生之光線可經由透鏡單元41往下穿透咳 等微影區511、512。 步驟（二）:將第一遮光板52設置定位於光罩51下方 ，並驅使曝光光源3發光，藉由該第-遮光板52之第二遮 光體523將穿透該等第二微影區512之光線播住，僅讓穿 透該等第-微影區511之光線往下穿透該等第一曝光區521 ，並被透鏡單元4!聚焦而對晶圓】〇〇頂面預定區域之光阻 劑進行微影曝光，而產生一與該等第一微影區511外型相對 應之微小圖樣（圖未示）^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 、 # ^ ( ^ ) V ^ 3 yii # ^ ^ 52 ^ ^ 光罩51下方，再將第二遮先板53設置定位於光罩51下方 。然後，驅使曝光光源3發光，藉由第二遮光板Μ之第二 遮光體533將穿透光罩51之該專第一微影區η〗之光線擋 M317594 年讓穿透該等第二微影區η2之光線往下穿透，並被 單元41聚焦而對晶圓1〇〇^ 4衫曝光，而產生與該等第二微影區512之外型相對應的 另一微小圖樣（圖未示）。 ^ t此日守:、步驟（二）與步驟（三）所得之微小圖樣的組 ^ 51 ^ t ^ # 510 ^ a κ 10 0各部位。The mask M 1 519 is composed of a sheet-shaped reticle body 513 made of a light-transmissive material, and a opaque first masking body 514 which is fixed to the bottom surface of the reticle body 513 and is combined with The first light-shielding body 514 defines the lithographic regions 511, 512 /^ - ^ - ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ on the mask body 5丨3 The first visor 52 has a first exposure area 521 which is spaced apart and can respectively penetrate the light downward. The second visor 53 has a second exposure which is spaced apart and can penetrate the light downward. Area 531. The visors 52, 53 疋 are respectively provided by a flat plate body 522, 53 for allowing light to pass downward, and an opaque second cover 523 which is fixed to the top surface of the plate bodies 522, 532, The 533 is combined, and the second light blocking bodies 523 and 533 define the exposed areas 521 and 531 around the corresponding board bodies 522 and 532. In this embodiment, the light-shielding bodies 514, 523, and 533 are all metallic chromium (Cr). However, the materials of the transparent materials 514, 523, and 533 are not limited thereto, as long as the exposure light source can be blocked. 3 The generated light can be penetrated. The visors 52, 53 are replaceable with the reticle 51, and f 52 ^ 53 51 , 521, 531 are respectively located directly below the lithographic regions 5ii, 2, respectively. Also, the light plate 52 is longitudinally parallel (4) ^ 52 ^ # ^ ^ ^ ^ 523 ^ ^ ^ T f ^ ^ f ^ ^ The lithography area 512 light key selection / gentry + ^ especially line, only let the penetration A lithography area 5Γ1 of the well slope ^ T f it It - ^ ^ ^ 521 ^ ^ ^ 41 〇 ^ ^ ^ ^ 53 533 T f it It # f M317594 Area 512 light stalking, only let the penetration of the first The two micro-wei can pass through the second exposure zone 531 and shoot toward the lens boundary, and the sub-functions 52, 53 function to direct the light passing through the first lithography second lithography area 512 Transmissive material = the distance between the light passing through the lens unit 5 and directed downward toward the lens unit ' to reduce interference and diffraction. Figure 2 5 does not 'when the lithography exposure system is used to lithographically expose the top surface of the wafer coated with photoresist, the steps are as follows: Step (-): The lithography exposure system It is disposed in a process environment and correspondingly located above the wafer 100, and the wafer 100 and the mask Η of the reticle device 5 are positioned opposite to each other under the exposure light source 3 and the upper lens unit 41, so that the light generated by the exposure light source 3 is generated. The lithographic regions 511, 512 such as cough can be penetrated downward through the lens unit 41. Step (2): positioning the first visor 52 under the reticle 51, and driving the exposure light source 3 to emit light, wherein the second opaque body 523 of the first visor 52 will penetrate the second lithography area The light of 512 is broadcasted, and only the light penetrating the first lithography area 511 is penetrated downward through the first exposure areas 521, and is focused by the lens unit 4! The photoresist is subjected to lithography exposure to produce a small pattern corresponding to the appearance of the first lithography regions 511 (not shown) ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ , # ^ ( ^ ) V ^ 3 yii # ^ ^ 52 ^ ^ Below the mask 51, the second mask 53 is placed under the mask 51. Then, the exposure light source 3 is driven to emit light, and the second light shielding body 533 of the second light shielding plate 将 passes the light ray blocking M317594 of the specific first lithography area η of the reticle 51 to penetrate the second micro ray The light of the shadow area η2 penetrates downward and is focused by the unit 41 to expose the wafer 1 to form another tiny pattern corresponding to the outer shape of the second lithography area 512 (Fig. Not shown). ^ t this day:, step (b) and step (c) of the tiny pattern of the group ^ 51 ^ t ^ # 510 ^ a κ 10 0 parts.
藉由上述该等遮光板52、53之曝光區521、531結構 口又j ’可增加往下穿透光罩51與遮光板52、53而射向透 鏡早以1之光線的間距（pitch)，進而降低光干涉與繞射 影區511、512構成的電路圖樣51〇分區曝光呈像於晶圓 微上’藉此提高微影曝光品質與微影曝光所構成之圖樣線 寬解間隔。同時，因為僅抽換該等遮光板52、53，光罩5 並無移動而與晶圓100的相對位置固定，所以可避免第一 微广區511、512呈像在晶圓1〇〇上之相對位置不準的 問題產生。 …在本實施例中，共設置有兩片遮光板52、53，並藉由 '等遮光板52、53之該等曝光區521、531的分佈設計， 來將穿透光罩5丨之光線區分成兩部分，而可刻於晶圓 ⑽上曝光形成不同之圖樣。但實施時，遮光板數量可依光 罩51之該等微影區密度與數量而增加，例如可採用五片遮 光板來將料51之微影區區分成五個獨立部分，並藉由五 10 M317594 51〇 a w 1〇〇 , ::.上。 . . 另外，本實施例之光罩51是設置於該尊遮光板5^ 上方，且光罩51的該等第一遮光體514是被覆於光罩本體 513底面’而該等遮光板52、53之^ 分別被覆於該等板本體522、532頂面，但實施時，光罩Η 設置於遮光板52、53上方之態樣可以有下列其它類型，以 弟一遮光板52為例進行說明： . 如圖6所不之態樣：第一遮光體514被覆於光罩本體 513底面，該等第二遮光體523被覆於該板本體522底面。 如圖7所不之態樣：第一遮光體514被覆於光罩本體 513頂面，该等第二遮光體523被覆於板本體522頂面。 如爵8所不之態樣：第一遮光體514被覆於光罩本體 513頂面’该等第二遮光體523被覆於該板本體乃^底面。 上述光罩51設置於該等遮先板52、53上方的方式， 卜 使得曝光光源3的光可先穿透該等微影區511、512後，再 被下方之第一或第二遮光板52、53分區擋住。但實施時， ’、可將該等遮光板52、53縱向排列地分別設置於光罩51 上方’以第一遮光板52為例，第一遮光板52可先將往下 射向光罩51之該等第二微影區512光線預先擋住，僅使穿 =第一遮光板52之該等第一曝光區521的光線能往下繼續 二透4等第一微影區511，而射向透鏡單元41，所以同樣可 #由4等遮光板52、53之二次分區曝光步驟來提升微影曝 光之品質。 M317594 且實施時，光罩51之第一遮光體514，及該等遮光板 52、53之第二遮光體523、533的設置方式，亦具有多種態 樣’以該光罩51和第-遮光板52之排列為例 ^，所示，不再詳述。另外綠 第二遮光板53之縱向排列方式可依需要而改變，不以上述 型態為限。 ^ 如圖13、14所示，本新型微影曝光系統第二較佳實施 例與第一實施例差異處僅在於：該光罩裝置5之結構設計 。為方便說明，在以下說明中將僅針對本實施例與第^實 施例差異處進行說明。^ ^ ^ ^ ' 在本實施例中，同樣是以光罩5 i設置於該等遮光板Μ 、53上方為例進行說日^該光罩51是由光罩本體⑴及多 數間隔被覆於光罩本體5i3底面之不透光第一遮光體5i4 組=成’且該等第一遮光體514於光罩本體5i3上界定 出S亥等相間隔’並可使光線往下穿透射向該等遮光板52 53之第-與第二微影區511、512。在本實施例中，該等第 ；'遮光f 514是以長條狀為例進行說明，且該等微影區511 耸=疋为別位於二相鄰第一遮光體叫間，但實施 4第一遮光體川外型不以此為限。 該等遮光板52、53日八“丄1公 a^^疋刀別由可透光板本體522、532， 體二，於板本體522、532頂面且彻^ 擎成。其中，第-遮光板_ ^體523疋對應位於該等第二微影區512正下方4 將彺下穿透該等第二以广^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 了 一铽衫區512的光線擋住，並與板本體 12 M317594 522相配合界定出該等相 #认4 5n iEm ㈣等第—微影屆 下方，而可使光線往下穿透射向透鏡單元4 i之第 曝光區 521。^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 弟 _ 511 ^ V11 ^Τ；" ? 511的先下擔住，並與板本體切相配合界定出該等相間隔 雜應位於該等第二微影區512正下方，而可使 牙透射向透鏡單元4丨之第二曝光區531。 51 ? 同樣可透過上述微影光方法，分縣光罩5 i之該等第一與 第U〜區511 512所構成之圖樣微縮複製至晶圓⑽上 。同樣的，該等光罩51與該等遮光板52、53亦可依照第 一實施例所述之各種組合方式進行組合排列，不再賢述。 歸納上述，藉由該光罩裝置5之該等遮光板52、53可分別 用以擋住穿透光罩51之該等第二與第一微影區512、51丨的 光線，或預先將射向該等第二或第一微影區512、511之光 線分別擋住的分次分區曝光設計，可增加每次曝先時，往 下牙透该光罩裝置5並射向透鏡單元41之光線間距丨沖化 )’所以穿透該等第一微影區51丨或穿透該等第二微影區 5 12之光線所產生的干涉與繞射現象會大幅降低，進而可提 高曝光光線對晶圓100微影曝光之呈像品質，相對提升晶 圓1〇〇曝光顯影後所產生之微縮電路圖樣的線寬間隔，使 得該微影曝光系統可應用於更小線寬圖樣之微影曝光，進 而可在晶圓100上形成更多且線寬更小之電晶體，而相對 13 M317594 • 提升產能與降低成本。因此，確實可達到本新型之目的。 ， 处惟以上所述者，僅為本新型之一較佳實施例而已，當 不此以此限疋本新型實施之範圍，即大凡依本新型申請專 利範圍及新型說明内容所作之簡單的等效變化與修飾，皆 仍屬本新型專利涵蓋之範圍内。 【圖式簡單說明】 圖1是本新型微影曝光系統之第一較佳實施例與一晶 圓搭配使用時的立體示意圖，說明以一光罩裝置之一第一 _ 迫光板進行微影曝光時的情況； 圖2是類似圖丨之視圖，說明以光罩裝置之一第二遮 光板進行微影曝光時的情況； 圖3是該光罩裝置之一光罩對應設置於第一遮光板上 方時的側視示意圖； 圖4是該光罩裝置之光罩對應設置於第二遮光板上方 時的側視示意圖； 圖5是以該較佳貫施例進行微影曝光的步驟流程圖； ^ 圖6是類似圖3之視圓，說明光罩與第一遮光板之不 同排列組合方式； 圖7是類似圖3之視圖，說明光罩與第一遮光板之不 同排列組合方式； 圖8是類似圖3之視圖，說明光罩與第一遮光板之不 同排列組合方式; 圖9是該光罩裝置之光罩對應設置於第一遮光板下方 時的侧視示意圖; 14 M317594 圖10是類似圖9之視圖，說明光罩與第一遮光板之不 同排列組合方式； 圖11是類似圖9之視圖，說明光罩與第一遮光板之不 同排歹組合方式； 圖12是類似圖9之視圖，說明光罩鱼 兴第一遮光板之不 同排列組合方式卜 ^ ^ ^ ^ ^ ^ ^ 圖13是本新型微影曝光系統之第二棱於κ 圓搭配使用時的立體示意圖，說明以一.发、％例與一晶 九罩巢置之一馀 遮光板進行微影曝光時的情況;及^ ^ ^ 弟一 圖14是類似圖13之視圖，說明以光罩 遮光板進行微影曝光時的情況。 置之一第二 15 M317594 - 【主要元件符號說明】 100.... …晶圓 514···· …第一遮光體 3 ....... ...曝光光源 52...... ...第一遮光板 4....... ...透鏡裝置 521 .... ...第一曝光區 41...... …透鏡單元 522.... ...板本體 5 ....... …光罩裝置 523 .... …第二遮光體 51...... …光罩 53.··.·· …第二遮光板 510···· ...電路圖樣 531 .... …第二曝光區 511 .... …第一微影區 532.... 512.... …第二微影區 533 .... …第二遮光體 513.... ...光罩本體The structure of the exposure regions 521, 531 of the visors 52, 53 can increase the pitch of the light that passes through the reticle 51 and the visor 52, 53 and is directed toward the lens. Further, the optical interference and the circuit pattern formed by the diffraction shadow regions 511 and 512 are reduced, and the partial exposure is displayed on the wafer micro-by the image line width interval of the lithographic exposure quality and the lithography exposure. At the same time, since only the visors 52, 53 are replaced, the reticle 5 is not moved and the relative position to the wafer 100 is fixed, so that the first micro-wide areas 511, 512 can be prevented from being imaged on the wafer 1 The problem of relative positional inaccuracy arises. In the present embodiment, two visors 52, 53 are provided in total, and the light passing through the reticle 5 is transmitted by the distribution design of the exposure regions 521, 531 of the unequal visors 52, 53. The area is divided into two parts and can be exposed on the wafer (10) to form a different pattern. However, the number of visors can be increased according to the density and quantity of the lithographic regions of the reticle 51. For example, five visors can be used to divide the lithography area of the material 51 into five independent parts, and by five 10 M317594 51〇aw 1〇〇, ::. In addition, the photomask 51 of the present embodiment is disposed above the opaque mask 5^, and the first opaque bodies 514 of the reticle 51 are covered on the bottom surface ′ of the reticle body 513, and the visors 52, The slabs of the slabs 522 and 532 are respectively disposed on the top surface of the hulls 522 and 532. However, in the implementation, the shovel yokes may be disposed on the louvers 52 and 53. As shown in FIG. 6 , the first light blocking body 514 is covered on the bottom surface of the mask body 513 , and the second light blocking bodies 523 are covered on the bottom surface of the board body 522 . As shown in FIG. 7, the first light blocking body 514 is covered on the top surface of the mask body 513, and the second light blocking bodies 523 are coated on the top surface of the board body 522. The first light-shielding body 514 is covered on the top surface of the mask body 513. The second light-shielding bodies 523 are coated on the bottom surface of the board body. The reticle 51 is disposed above the slabs 52, 53 so that the light of the exposure light source 3 can pass through the lithography regions 511 and 512 before being used by the first or second visor below. 52, 53 partition block. However, in the implementation, 'the visors 52, 53 may be arranged vertically above the reticle 51.' Taking the first visor 52 as an example, the first visor 52 may first be directed downward toward the reticle 51. The second lithographic regions 512 are pre-blocked, and only the light passing through the first exposure regions 521 of the first visor 52 can continue to pass through the first lithography region 511, etc. Since the lens unit 41 is used, it is also possible to improve the quality of the lithographic exposure by the secondary division exposure step of the visors 52 and 53 of the fourth. When the M317594 is implemented, the first light blocking body 514 of the mask 51 and the second light blocking bodies 523 and 533 of the light shielding plates 52 and 53 are disposed in various manners. The arrangement of the plates 52 is taken as an example and is not described in detail. In addition, the longitudinal arrangement of the green second visor 53 can be changed as needed, and is not limited to the above type. As shown in Figures 13 and 14, the second preferred embodiment of the novel lithography exposure system differs from the first embodiment only in the structural design of the reticle device 5. For convenience of explanation, only differences between the present embodiment and the second embodiment will be described in the following description. ^ ^ ^ ^ ' In the present embodiment, the photomask 51 is also covered by the mask body (1) and the majority of the spacers. The opaque first light-shielding body 5i4 of the bottom surface of the cover body 5i3 is set to 'and the first light-shielding body 514 defines an S-equal interval on the reticle body 5i3 and transmits the light downwards to the The first and second lithography regions 511, 512 of the visor 52 53. In the present embodiment, the first portion of the 'shading f 514 is described as an example of a strip shape, and the lithographic regions 511 are arbitrarily located between two adjacent first light-shielding bodies, but the implementation is 4 The first shading body is not limited to this. The visors 52, 53 日 丄 公 公 公 公 ^ ^ ^ 别 公 公 公 可 可 可 可 可 可 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 522 The visor _ ^ body 523 疋 is located directly below the second lithography area 512 4 will penetrate the second 以 广 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The light of 512 is blocked, and cooperates with the plate body 12 M317594 522 to define the phase of the phase 4 n 4 5n iEm (4), the lithography, and the light can be passed down to the first exposure of the lens unit 4 i Area 521. ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ _ 511 ^ V11 ^ Τ; " 511 first to bear, and with the plate body to define the phase spacing should be located Waiting for the second lithography area 512 directly below, the teeth can be transmitted to the second exposure area 531 of the lens unit 4 。 51. Similarly, the first photographic mask 5 i can be transmitted through the lithography method. The pattern formed by the U-region 511 512 is micro-copied onto the wafer (10). Similarly, the masks 51 and the visors 52, 53 may be arranged in combination according to various combinations described in the first embodiment. , In summary, the visors 52, 53 of the reticle device 5 can respectively block the light passing through the second and first lithographic regions 512, 51 of the reticle 51. Or a partial partitioning exposure design that blocks the light rays that are respectively directed to the second or first lithographic regions 512, 511, and can increase the exposure of the reticle device 5 to each of the exposures at each exposure. The ray spacing of the lens unit 41 is buffered) 'so that the interference and diffraction caused by the light passing through the first lithography regions 51 or penetrating the second lithography regions 5 12 are greatly reduced, and further The image quality of the lithographic exposure of the wafer 100 can be improved, and the line width interval of the miniature circuit pattern generated after the exposure of the wafer is increased, so that the lithography exposure system can be applied to a smaller line width. The lithography of the pattern exposes more crystals with smaller line widths on the wafer 100, while the relative 13 M317594 • increases productivity and lowers costs. Therefore, the purpose of this new model can be achieved. The above is only one preferred embodiment of the present invention, when This is not limited to the scope of this new implementation, that is, the simple equivalent changes and modifications made by the new patent application scope and the new description content are still within the scope of this new patent. 1 is a perspective view of a first preferred embodiment of the lithographic exposure system of the present invention when used in conjunction with a wafer, illustrating a case where lithography exposure is performed by a first ray plate of a reticle device; 2 is a view similar to the figure, illustrating the case when the lithography is performed by the second visor of the reticle device; FIG. 3 is a side view of the reticle device when the reticle is correspondingly disposed above the first visor Figure 4 is a side elevational view of the reticle of the reticle device corresponding to the second visor; Figure 5 is a flow chart of the lithography exposure of the preferred embodiment; ^ Figure 6 is similar Figure 3 is a perspective circle illustrating a different arrangement of the reticle and the first visor; Figure 7 is a view similar to Figure 3, illustrating a different arrangement of the reticle and the first visor; Figure 8 is similar to Figure 3 View, illustrated mask Figure 9 is a side view showing the reticle of the reticle device correspondingly disposed under the first visor; 14 M317594 Figure 10 is a view similar to Figure 9, illustrating the reticle and FIG. 11 is a view similar to FIG. 9 , illustrating a different arrangement of the reticle and the first visor; FIG. 12 is a view similar to FIG. 9 illustrating the first hood of the hood Different arrangement and combination of visors ^ ^ ^ ^ ^ ^ ^ Figure 13 is a three-dimensional diagram of the second edge of the new lithography exposure system used in combination with κ circle, illustrating one, one, and one crystal The case where the cover is placed in a lithography for lithography exposure; and ^^^, Figure 14 is a view similar to Fig. 13, illustrating the case when the reticle is subjected to lithography exposure. One of the second 15 M317594 - [Main component symbol description] 100.... wafer 514····...first light-shielding body 3............exposure light source 52.... .. ...first visor 4.. . . . lens device 521 ..... first exposure zone 41 ... ... lens unit 522.... .. plate body 5 . . . reticle device 523 .... ... second light blocking body 51 ... ... reticle 53 ........ second visor 510 · ··· ...circuit pattern 531 .... ... second exposure area 511 .... ... first lithography area 532.... 512.... second lithography area 533 .... ...the second light shield 513....the mask body
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