TWM311888U - Peak voltage detector having PMOS current source with dual charging paths - Google Patents

Peak voltage detector having PMOS current source with dual charging paths Download PDF

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TWM311888U
TWM311888U TW95218683U TW95218683U TWM311888U TW M311888 U TWM311888 U TW M311888U TW 95218683 U TW95218683 U TW 95218683U TW 95218683 U TW95218683 U TW 95218683U TW M311888 U TWM311888 U TW M311888U
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Taiwan
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transistor
voltage
source
current
drain
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TW95218683U
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Chinese (zh)
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Ming-Chuen Shiau
Chun-Ming Huang
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Hsiuping Inst Technology
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M311888 八、新型說明: 【新型所屬之技術領域】 電壓峰值檢知器,尤指利 本創作係蝴-種具PMQS電麵之雙充電路搜 用差動放大器、一電流鏡、一二極I#、LV孩一φ^ w 壓峰值且編功娜之互補式金氧半求獲得精確電 【先前技術】 …電㈣值檢知器係一種電子電路,能夠測得一電壓波形之最大值 § 亥電路之輸入為一變動之電壓信號,而1輪 、σ 从 阳具輸出則疋该輸入電壓波形之最大值。 在终夕應用中’輸入電壓信號之峰值必馳測出,然後將之以直 呆留=以便後續分析、使用。-個脈衝串之尖峰值常比它的平均值要更有用了 破壞性職時’财必要追尋出並保鱗值信號,而·_伸 在傳輸媒"上之衰減量、_至紐轉換器(趟_咖)、最大近似解碼^ ΪΓΓ h00d decoding system)以及用以檢測核輻射之脈 專也需要用到電壓峰值檢知器。 先前技藝(prior art)中,電壓峰值檢知器之最簡單作法係令輸人電壓信號通過 二極體,而對電容充電,以便取得該輸入電壓波形之峰值。 如第一圖所示,當輸入電壓V(IN)大於電容器c之電壓時,二極體〇導通, 春遂行充電作用,直到輸入電壓V(IN)到達其最大值,電容器C不能再繼續充 電,此時輸出電壓ν(ουτ)即表示輸入電壓V(IN)之峰值。 由於輸出端與輸入端之間存在二極體D,此電路無法精確地檢得輸入電壓 V(IN)之真正峰值。換言之,輸出電壓ν(〇υτ)與輸入電壓V(IN)之峰值之間永遠 存在二極體導通電壓Vd之誤差。亦即,MAx(V(0UT))=MAX(v(IN))_Vd,如第 二圖所示(該圖係OrCADPSpice之暫態分析模擬結果)。 對於許多應用而言,上述二極體導通電壓Vd之誤差係不欲見到的,並且該 電壓差會因為使用不同之二極體而有所差異,可能導致不良之影響或不可預測 之後果。 為了能夠精確地檢測輸入之峰值電壓,另一種常用之先前技藝係使用了由二 個運算放大器OP1和OP2、二個二極體D1和D2、二個電阻器R1和幻、以及一 M311888 構成Γ電壓峰值檢知器’如第三圖所示’其OrCADPSpiee之暫態 第四圖所示。其中,0P1是—個精確的半波整流器,當輸入 曰替4電壓V(C)時’二輔D1將傳送偏壓對電容SCI進行充電, 也與輸人電壓¥歐峰細相繼,所檢測出的輸出 V(IN)之峰值機目當接近,不會再細二圖所示 之間存在—"極體導通電壓W之誤差。而當輸入電壓 電容% ϋ ^ ¥(〇時,、>二極體m將會導通,二極體di將會截止而不再對 電之動作,這使得所檢測出的輸出電壓耶叩會等於輸入電壓 's。雖5兒第二圖之電壓峰值檢知器能精確地檢測出,值電壓,但 其電路結構、佔關“ _A,實不觀频電路之要求。 迄今,有許多電壓峰值檢知器之技術被提出 於 ,_9、5502746、觸27、5969545、嶋98、^ t =民^專利案公告案號第476418號中所揭露者均是,該等技術均能精確地 :測輸入信號之峰值電壓’但由於該等電壓峰值檢知器均使用到—個以上之運 ^放大器’因此存在有電路結構複雜、侧的晶片面積大等缺失;此外,該等 電壓峰值檢知ϋ並未考慮到如何節省功率消耗之問題。 最近,有幾種不需使用到運算放大器之精密電壓峰值檢知器之技術被提 出,例如中華民國專利案公告案號第爪⑹?虎、第523592號(其主要代表圖如 弟五圖所示)、第122細號、第1223〇79號、第1223_號和第ΐ22麵號中所 揭露者即是,該等技術係由本巾請人提出,其係以—差動放大器和—電流鏡所 組成^路來取代運算放大器,由於並不使_運算放大器,因此,具備電路 ,構簡單、佔用的晶片面積小以及有利於裝置之小型化等多重功效。然而,該 等技術亦未考慮到如何減少功率雜之問題,因此仍有改良空間存在。 有鑑於此,本創作之主要目的係提出一種新穎架構之電壓峰值檢知器,其不 但能精確且快速地制A輸人健之峰值電壓,並且可較先狀賴 器具有更低之功率消耗。 【新型内容】 本創作提出一種具PM0S電流源之雙充電路徑電壓峰值檢知器,其係由一差 M311888 動放大器⑴、一電流鏡⑵、一二極體(3)以及-電容n⑹所組成, 其中,該差動放大器⑴係做為比較器使用,其兩輸入端係分別接受輸入信號 • V(IN)及檢知ϋ之輸出電壓回授信號ν_),並提供適#之充電電流給電流鏡 •⑵,以便取得輸入信號V(IN)之峰值做為輸出電壓信號,而該電流鏡(2)係 作為充電器使用,用以提供電容器⑹所需之第一充電電流,該差動放大器⑴ 係由第一 PMOS電晶體(MP1)、第二pm〇S電晶體(MP2)、第一 NM〇s電晶體(MN1)、 第二NMOS電晶體(MN2)以及臓電流源(IP)所組成,其中,該第一 _s 電晶體匪和第二_s電晶體臟係做為驅動器(driver)使用,該第一臓 電晶體MP1和第:PM〇S電晶體MP2係做為主動負載(active 1〇ad)使用,而該 BIOS電流源(IP)則作為-電流源使用且設計成二極體形式,以便提供一電流 籲給該差動放大器⑴使用。本創作中之該電流鏡⑵係作為第一充電器使用, 用以提供電容器所需之第一充電電流,而該二極體⑶則作為第二充電器使用, 以提供電容器所需之第二充電電流,俾藉此種雙充電路徑之結構,以精確且快 速地取知輸入電壓波形之峰值電壓。本創作所提出之電壓峰值檢知器,不但能 精確地檢測出輸入信號之峰值電壓,並且也能有效地減少功率消耗。 【實施方式】M311888 VIII, new description: [New technology field] Voltage peak detector, especially Liben creative system butterfly - a dual charging circuit with PMQS electric surface search differential amplifier, a current mirror, a diode II #,LV 孩一 φ^ w The peak value and the complement of the gold and oxygen to obtain accurate electric [previous technology] ... electric (four) value detector is an electronic circuit, can measure the maximum value of a voltage waveform § The input of the circuit is a varying voltage signal, and the 1st round, σ slave output is the maximum value of the input voltage waveform. In the end of the day application, the peak value of the input voltage signal must be measured and then left to be left for subsequent analysis and use. - The peak value of a burst is often more useful than its average. The destructive job time is necessary to trace and protect the scale value signal, and the extension of the transmission medium & _ to the new conversion The voltage peak detector is also required for the device (趟_咖), the maximum approximate decoding ^ ΪΓΓ h00d decoding system, and the pulse for detecting nuclear radiation. In the prior art, the simplest method of the voltage peak detector is to pass the input voltage signal through the diode and charge the capacitor to obtain the peak value of the input voltage waveform. As shown in the first figure, when the input voltage V(IN) is greater than the voltage of the capacitor c, the diode is turned on, and the charging is performed until the input voltage V(IN) reaches its maximum value, and the capacitor C can no longer continue charging. At this time, the output voltage ν(ουτ) represents the peak value of the input voltage V(IN). Due to the presence of diode D between the output and the input, this circuit cannot accurately detect the true peak value of the input voltage V(IN). In other words, there is always an error in the diode turn-on voltage Vd between the output voltage ν(〇υτ) and the peak value of the input voltage V(IN). That is, MAx(V(0UT))=MAX(v(IN))_Vd, as shown in the second figure (this figure is a transient analysis simulation result of OrCADPSpice). For many applications, the above-mentioned error in the diode turn-on voltage Vd is undesired, and the voltage difference may vary due to the use of different diodes, which may cause adverse effects or unpredictable consequences. In order to accurately detect the peak voltage of the input, another commonly used prior art technique consists of two operational amplifiers OP1 and OP2, two diodes D1 and D2, two resistors R1 and phantom, and a M311888. The voltage peak detector is shown in the fourth diagram of the OrCADPSpiee transient as shown in the third figure. Among them, 0P1 is an accurate half-wave rectifier. When the input voltage is 4 voltage V(C), the second auxiliary D1 will transmit the bias voltage to charge the capacitor SCI, and also the input voltage and the peak of the output. When the peak value of the output V(IN) is close, there will be no error between the polarity of the electrode (W). When the input voltage capacitance % ϋ ^ ¥ (〇, , > diode m will be turned on, the diode di will be cut off and no longer operate on electricity, which makes the detected output voltage yeah It is equal to the input voltage 's. Although the voltage peak detector of the second picture of 5 can accurately detect the value voltage, but its circuit structure, it takes up the requirement of "_A, the actual non-observing circuit. So far, there are many voltage peaks. The technology of the detector is proposed in _9, 5502746, touch 27, 5969545, 嶋98, ^ t = Min ^ Patent Case No. 476418, all of which are capable of accurately measuring: The peak voltage of the input signal 'but because the voltage peak detectors use more than one of the amplifiers', there is a lack of circuit structure, large wafer area on the side, etc.; in addition, the voltage peak detection ϋ There is no consideration of how to save power consumption. Recently, several techniques have been proposed that do not require the use of precision voltage peak detectors for operational amplifiers, such as the Republic of China Patent Case No. Claw (6)? Tiger, No. 523592 Number (the main representative As disclosed in the fifth picture of the younger brother, the 122nd serial number, the 1223rd 79th, the 1223_th and the 22nd surface code, these techniques are proposed by the person in charge of the towel, which is The combination of a dynamic amplifier and a current mirror replaces the operational amplifier, and since it does not make an operational amplifier, it has a circuit, a simple structure, a small wafer area, and a small effect of miniaturization of the device. The technology does not consider how to reduce the power miscellaneous problem, so there is still room for improvement. In view of this, the main purpose of this creation is to propose a novel architecture voltage peak detector, which can not only accurately and quickly make A The peak voltage of the input is lower, and it can have lower power consumption than the first device. [New content] This creation proposes a dual charging path voltage peak detector with PM0S current source, which is driven by a difference M311888. The amplifier (1), a current mirror (2), a diode (3) and a capacitor n (6) are used. The differential amplifier (1) is used as a comparator, and the two input terminals respectively receive input signals. V(IN) and the detection output voltage feedback signal ν_), and provide the charging current to the current mirror (2), so as to obtain the peak value of the input signal V(IN) as the output voltage signal, and the current mirror (2) is used as a charger to provide a first charging current required for the capacitor (6), the differential amplifier (1) is composed of a first PMOS transistor (MP1), a second pm 〇S transistor (MP2), An NM〇s transistor (MN1), a second NMOS transistor (MN2), and a 臓 current source (IP), wherein the first _s transistor 匪 and the second _s transistor are used as drivers (driver) is used, the first germanium transistor MP1 and the first: PM〇S transistor MP2 are used as an active load, and the BIOS current source (IP) is used as a current source and is designed. In the form of a diode, a current is supplied to the differential amplifier (1) for use. The current mirror (2) in this creation is used as a first charger to provide a first charging current required for the capacitor, and the diode (3) is used as a second charger to provide a second required capacitor. The charging current, by virtue of the structure of the dual charging path, accurately and quickly knows the peak voltage of the input voltage waveform. The voltage peak detector proposed by the present invention not only accurately detects the peak voltage of the input signal, but also effectively reduces power consumption. [Embodiment]

根據上述之目的,本創作提出一種具PM〇s電流源之峰值檢知器,如第六圖 所示,其係由一差動放大器卜一電流鏡2、、一二極體3以及一電容器c所組成。 Φ 該差動放大器1係由第一pMOS電晶體MP卜第:PMOS電晶體MP2、第一NMOS 電晶體MN1、第二NMOS電晶體_2以及PMOS電流源IP所組成,其中,該第一 NMOS電晶體丽1和第二麵〇8電晶體MN2係做為驅動器(driver)使用,該第一 PMOS電晶體MP1和弟一PMOS電晶體MP2係做為主動負載(active load)使用,而 该PMOS電流源IP係由一PMOS電晶體所組成且設計成二極體形式,以便提供一 電流給該差動放大器1使用。 該第一NMOS電晶體MN1和第二顧〇8電晶體MN2之閘極(gate)係分別接受 輸入信號V(IN)及檢知器之輸出電壓回授信號V(〇UT),源極(source)連接在一 起’並連接至PMOS電流源IP之源極(source),而其沒極則分別與第一PMOS電晶 體MP1和第二PMOS電晶體MP2之汲極相連接;該PMOS電流源IP係由一PM〇s M311888 電晶體所組成,其閘極與汲極連接在一起以形成一二極體,並連接至接地,而 源極則連接至該第一 NM〇s電晶體·^和該第二雇〇8電晶體麵2之源極丨該 第一PMOS電晶體MP1和第二PMOS電晶體MP2之源極均連接至電源電壓Vdd, 而閘極則連接在一起,且該第二削〇8電晶體Mp2之閘極與汲極係連接在一起, 以形成一電流鏡組態。 请再參考第六圖,該電流鏡2係由第sPM0s電晶體和第wpM〇s電晶體 MP4所組成。其中,該第三刚⑺電晶體则和第四pM〇s電晶體刪之源極均 連接至電源電壓Vdd,而閘極則連接在一起,並連接至第一麵〇8電晶體顧 之汲極,且該第三PMOS電晶體MP3之閘極與汲極係連接在一起,以形成一電流 鏡組態;再者,PM0S電晶體MP4之汲極係與電容器c之一端連接,並形成該電 攀壓峰值檢知器之輸出端,而該電容器€之另一端則接地。該電流鏡係做為第一充 電器使用,以提供電容器所需之第一充電電流。 至於二極體3則係由NM〇S電晶體麵3所組成。其中,該應〇8電晶體_3 ^汲極及閘極連接在-起,並與輸人電歡㈣連接,源極則連接至輸出端。該 二極體係做為第二充電ϋ使用,以提供電容騎需之第二充電電流。 ί 說明起見,以下之推導過程,均將金氧半電晶體獻CAD PSpice 中之最簡單模型來描述,且不考慮通道長度調變(血福⑽此論η)效 應。但於後續之模擬驗證時,則考慮了PSpice中之所有電晶體參數(當然包括通 道長度調變效應)。 _ 纟第/、®所示電路得知’電容II之充電過程可分成二個階段,第—階段係將 輸出電壓ν(ουτ)拉升至輸入電壓V㈣之聲值扣減Vt之電壓準位(其中vt代表 NMOS電晶體MN3之臨限電壓)’第二階段係將輸出電Μν(〇υτ)由輸^電壓卿) 之峰值扣減壓準位勒^升至輸人冑齡㈣峰值之準位。在該第一階 段中’係具有雙充電路徑之結構,亦即,同時以第一及第二充電電流來對電容 器進行充電作業,因此,可有效縮短該第一階段所需之時間。而在該第二階段 中則因二極體3已截止,因此僅以第一充電電流來對電容器進行後續之充電作 業。於此,為了快速完成電容器之充電作業,將第一充電電流設計成大於第二 充電電流。 在"亥第Ps#又中,就第-充電電流來看,因輸入電壓零^)大於電容電麼 哪’因此,電細(MN!)會大於_Id (MP2),其中,流入電晶體之電流取 M311888 正號,而流出電晶體之電流則取負號,亦即,電流I(i(MNl)代表流入第一nm〇S 電晶體MN1之汲極電流,而-Id (MP2)則代表流出第二PMOS電晶體MP2之汲極 電流。又 ⑴ ⑵ (3) -Id (MP1) = _Id (MP2) -Id (MP3) = Id (MN1) -[-Id (MP1)] 所以 -Id (MP3) > 〇 而PMOS電晶體MP3、MP4也係為一由pm〇S電晶體所組成的電流鏡組態, 當-Id (MP3) >〇時,電流(MP4)會等於_id (MP3),因而可對電容器c 進行充電作業(該電流-Id(MP3)即為上述之第一充電電流)。 口 再者,就第二充電電流來看,因輸入電壓V(IN)之峰值扣減vt之電壓準位係 大於電容電壓v(c),@此’電流Id_3)也會對電容c進行充電作業(該電流 Id(MN3)即為上述之第二充電電流)。 在該第二階段中’因輸入電壓V㈣之峰值扣減vt之電壓準位係小於電容電 壓V(C) ’因此’二極體3呈截止賴,亦即第二充電電流 I d (MN3) = 〇 ⑷ 差動達:出電壓有於輪入信號聊的峰讎時,由於 ⑸ -Id (MP1) =4d (MP2) = id (MN〇 所以電流 (6) -Id (MP3) =-id (MP4) =〇 於輸入信號v⑽的峰^^充電動作,所以所檢·的輸出輕ν(〇υτ)將會等 截止入信侧)小於輪_職,第三咖S電晶細將處於 M311888 -Id (MP3) =-Id (MP4) =q 所以也將不會對電容H進行充電動作,因此所 會維持在輸人信職IN)之峰值·。 ㈣_ MV(OUT)仍 本創作所提出之電壓峰值檢知器之q· pSpice暫態分析模擬 七圖所示,由該模擬結果可对,本創作所提出之電壓 自 測出輸入信號之峰值電壓。 衫心b精確地4欢 接下來說明本創作如何減少功率消耗,首先比較第五圖所示之 案號第523·號補案之霞峰值檢知器鄉六_示之本創作較 :According to the above purpose, the present invention proposes a peak detector with a current source of PM〇s, as shown in the sixth figure, which is composed of a differential amplifier, a current mirror 2, a diode 3 and a capacitor. The composition of c. Φ The differential amplifier 1 is composed of a first pMOS transistor MP: a PMOS transistor MP2, a first NMOS transistor MN1, a second NMOS transistor_2, and a PMOS current source IP, wherein the first NMOS The transistor MN1 and the second area 〇8 transistor MN2 are used as drivers, and the first PMOS transistor MP1 and the PMOS transistor MP2 are used as active loads, and the PMOS is used. The current source IP is composed of a PMOS transistor and is designed in the form of a diode to provide a current for the differential amplifier 1. The gates of the first NMOS transistor MN1 and the second NMOS transistor MN2 respectively receive the input signal V(IN) and the output voltage feedback signal V(〇UT) of the detector, and the source ( Source) connected together and connected to the source of the PMOS current source IP, and the poles thereof are respectively connected to the drains of the first PMOS transistor MP1 and the second PMOS transistor MP2; the PMOS current source The IP system consists of a PM〇s M311888 transistor whose gate is connected to the drain to form a diode and is connected to ground, and the source is connected to the first NM〇s transistor. And the source of the second die 8 transistor face 2, the sources of the first PMOS transistor MP1 and the second PMOS transistor MP2 are both connected to the power supply voltage Vdd, and the gates are connected together, and the first The gate of the second transistor 8 transistor Mp2 is connected to the drain line to form a current mirror configuration. Referring again to the sixth figure, the current mirror 2 is composed of a sPM0s transistor and a wpM〇s transistor MP4. Wherein, the third rigid (7) transistor and the source of the fourth pM〇s transistor are connected to the power supply voltage Vdd, and the gates are connected together and connected to the first surface 电8 transistor. a pole, and the gate of the third PMOS transistor MP3 is connected to the drain line to form a current mirror configuration; further, the drain of the PM0S transistor MP4 is connected to one end of the capacitor c, and the The electric climber presses the output of the peak detector, and the other end of the capacitor is grounded. The current mirror is used as a first charger to provide the first charging current required by the capacitor. As for the diode 3, it is composed of the NM〇S crystal face 3. Wherein, the 〇8 transistor _3 ^ 汲 and the gate are connected at - and connected to the input power (four), and the source is connected to the output. The two-pole system is used as a second charging port to provide a second charging current for the capacitor ride. For the sake of explanation, the following derivation process describes the simplest model of CAD PSpice, and does not consider the channel length modulation (Blood (10) η) effect. However, in the subsequent simulation verification, all the transistor parameters in PSpice (including, of course, the channel length modulation effect) are considered. _ 纟 / / ® circuit shows that 'capacitor II charging process can be divided into two stages, the first stage is to pull the output voltage ν (ο υ τ) to the input voltage V (four) of the sound value deduction Vt voltage level (where vt represents the threshold voltage of the NMOS transistor MN3) 'The second stage is to increase the output voltage Μν(〇υτ) from the peak decompression level of the output voltage to the input age (four) peak value Level. In the first stage, the structure has a dual charging path, i.e., the charging operation is performed with the first and second charging currents at the same time, so that the time required for the first stage can be effectively shortened. In the second phase, since the diode 3 is turned off, the capacitor is subsequently charged only with the first charging current. Here, in order to quickly complete the charging operation of the capacitor, the first charging current is designed to be larger than the second charging current. In the "Hai Ps# again, in terms of the first charging current, since the input voltage is zero ^) is greater than the capacitance, so the electric thin (MN!) will be greater than _Id (MP2), where the inflow The current of the crystal takes the positive sign of M311888, while the current flowing out of the transistor takes a negative sign, that is, the current I(i(MNl) represents the drain current flowing into the first nm〇S transistor MN1, and -Id (MP2) Then represents the drain current flowing out of the second PMOS transistor MP2. Again (1) (2) (3) - Id (MP1) = _Id (MP2) - Id (MP3) = Id (MN1) - [-Id (MP1)] So - Id (MP3) > PMOS PMOS transistor MP3, MP4 is also a current mirror configuration composed of pm 〇 S transistor, when -Id (MP3) > ,, current (MP4) will be equal to _ Id (MP3), so the capacitor c can be charged (the current -Id (MP3) is the first charging current mentioned above). Again, in terms of the second charging current, the input voltage V(IN) The voltage level of the peak deduction vt is greater than the capacitor voltage v(c), and the current 'current Id_3' also charges the capacitor c (the current Id (MN3) is the second charging current described above). In this second phase, 'the voltage level of the deducted vt due to the peak value of the input voltage V(4) is less than the capacitance voltage V(C) 'so the diode 3 is turned off, that is, the second charging current I d (MN3) = 〇(4) Differential: When the output voltage is at the peak of the turn-in signal, since (5) -Id (MP1) = 4d (MP2) = id (MN〇, current (6) - Id (MP3) = -id (MP4) = 〇 峰 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入-Id (MP3) = -Id (MP4) = q Therefore, the capacitor H will not be charged, so it will remain at the peak of the input signal IN). (4) _ MV (OUT) is still shown in the q-pSpice transient analysis simulation of the voltage peak detector proposed by the author. The simulation result can be used. The voltage proposed by the author self-tests the peak voltage of the input signal. . The shirt heart b is exactly 4 Huan. Next, how to reduce the power consumption of this creation. First, compare the case number No. 523· of the case number shown in the fifth figure to the peak value of the detector.

由於在第五圖所示之先前技藝巾,㈣提供_電流給差紐大器1使用之 NMOS電晶體_3之剛雖連接至電源電壓,因此,該第三丽電^ 體刪賴源極電壓恒等於電源電壓蘭,反觀本創作用以提供一電·差^ 放大器1使用之PMOS電流源㈣、由一 p腦電晶體所組成且設計成^極體形 式,亦即將作為PMOS電流源IP使用之該PM〇s電晶體的閘極與汲極連接在一 起,並連接至接地,因此,本創作作為PM〇s電流源Ip使用之該pM〇s電晶體 閘源極電壓Vc^的絕對值恆小於第五圖所示之該第三刪⑽電晶體丽]的問 源極電壓;騎,本創侧讀m給差滅大器丨使狀pM〇s電流源 IP係由-PMOS電晶體所組成’㈣五圖所示先前技_以提供—電流給差動 放大器1使用之第三NMOS電晶體MN3係由一 _〇8電晶體所組成,由於Because of the prior art towel shown in FIG. 5, (4) the NMOS transistor _3 used to supply the _ current to the differential illuminator 1 is connected to the power supply voltage, and therefore, the third ray is deleted from the source. The voltage is always equal to the power supply voltage blue. In contrast, the PMOS current source (4) used by the generator to provide an electric/difference amplifier 1 is composed of a p-brain crystal and is designed in the form of a polar body, which is also to be used as a PMOS current source IP. The gate of the PM〇s transistor is connected to the drain and connected to the ground. Therefore, the absolute value of the pM〇s transistor gate voltage Vc^ used as the PM〇s current source Ip is used. The value is constant less than the source voltage of the third (10) transistor shown in the fifth figure; riding, the invasive side reads the m to the difference, and the pM〇s current source IP is made of -PMOS. The crystal consists of the '(4) and the fifth figure shown in the previous figure. The third NMOS transistor MN3 used for the differential amplifier 1 is composed of a _8 transistor.

⑺ PMOS電日日體之互導參數KP(transconductance parameter)通常小於njvjos電晶體 之互導參數(互導參數KP表示OrCAD Pspice中之-金氧半電晶體模型參數), 因此在用以提供電流給差動放大器丨使用之電晶體具有相同的有效通道寬度/長 度比值的情況下,本創作恆較第五圖所示之先前技藝具有更低之功率消耗。 第八圖所示為中華民國公告案號第523592號專利案之電壓峰值檢知器(先前 技藝)與本創作電壓峰值檢知器之〇rCADPSpice暫態分析模擬結果,由該模擬結 果可証貫,本創作之電壓峰值檢知器可較先前技藝具有更低之電流消耗。第八 圖係以level 3模型且使用〇·25微米CMOS製程參數加以模擬(其PM0S電晶體和 NMOS電晶體之零基底偏壓臨限電壓值ντο分別為-〇.5V和〇.5V),其中,PMOS 電晶體ΜΡ1、ΜΡ2、MP3、MP4之通道寬長比均為(W/L)=(2 · 0.25μηι/0.25μηι), NMOS電晶體ΜΝ卜ΜΝ2和ΜΝ3之通道寬長比均為(w/L)=(0.25pm/0.25Mm), NMOS電晶體MN3之通道寬長比為(W/L)=(〇.25pm/8 · 0·25μιη),作為提供一電 10 M311888 流給差動放大器1使用之PM〇Sf:流源_pM〇s電晶體之通道寬長比為 (W/L)=(0.25pm/8 · 〇.25μιη),至於電容器C之電容值則為_。 本創作之電壓峰值檢知!|在使用時可於電容器c兩端並聯連接_開關,該 開關係㈣提供-放電路徑,⑽將餘紅叙電荷放電 輸入電壓信號之峰值檢測。 、下一入 【創作功效】 ,創作所提出之電壓峰值檢知器,具有如下功效: ⑴之小型化:由於本創作所提出之電壓峰值檢知器僅使 構新賴、簡鄭及1個電容11,因此不但電路架 電*因=:器經模擬結果証實’確細確地 降低差動放大器之電壓峰值檢知11經模擬結果讀,確實能有效 耗。 電机/肖耗,因此可有效降低電壓峰值檢知器之功率消 雖然本本創作特为丨j恭、 人士可明瞭任何形式^路f描述了所選之最佳實施例,但舉凡熟悉本技術之 此,所有相關技術範4 = 上可能的變化均未脫離本創作的精神與範圍。因 &π内之改變都包括在本創作之申請專利範圍内。 M311888 【圖式簡單說明】 第一圖係顯示第一先前技藝中電壓峰值檢知器之電路圖; 第二圖係顯示第一圖電壓峰值檢知器之輸入電壓信號及輸出電壓信號之暫態分 析時序圖; 第三圖係顯示第二先前技藝中電壓峰值檢知器之電路圖; 第四圖係顯示第三圖電壓峰值檢知器之輸入電壓信號及輸出電壓信號之暫態分 析時序圖; 第五圖係顯示中華民國公告案號第523592號專利案電壓峰值檢知器之電路圖; 第六圖係顯不本創作較佳實施例之電壓峰值檢知器之電路圖; 第七圖係顯示本創作較佳實施例之輸入電壓信號及輸出電壓信號之暫態分析時 序圖; 第八圖係比較本創作電壓峰值檢知器與中華民國公告案號第523592號專利案電 壓峰值檢知器之暫態電流分析時序圖。 【主要元件符號說明】 1 差動放大器 2 電流鏡 3 二極體 C 電容器 D 二極體 D1 二極體 D2 二極體 Id(MN3) NMOS電晶體MN3之汲極電流 0P1 運算放大器 OP2 運算放大器 MP1 第一 PMOS電晶體 MP2 第二PMOS電晶體 MP3 第三PMOS電晶體 MP4 第四PMOS電晶體 MN1 第一 NMOS電晶體 MN2 第二NMOS電晶體 IP PMOS電流源 Vdd 電源電壓 R1 電阻器 R2 電阻器 V(IN) 輸入電壓信號 V(OUT) 輸出電壓信號(7) The transconductance parameter of the PMOS electric solar field is usually smaller than the mutual conductance parameter of the njvjos transistor (the mutual conductance parameter KP represents the parameter of the gold-oxygen semi-transistor model in OrCAD Pspice), so it is used to supply current. In the case where the transistor used for the differential amplifier has the same effective channel width/length ratio, the present writing has a lower power consumption than the prior art shown in the fifth figure. The eighth figure shows the 峰值rCADPSpice transient analysis simulation result of the voltage peak detector (previous skill) of the Republic of China Bulletin No. 523592 and the artificial voltage peak detector, which can be proved by the simulation result. The voltage peak detector of the present invention has a lower current consumption than the prior art. The eighth figure is simulated with the level 3 model and using the 〇·25 micron CMOS process parameters (the zero-substrate bias voltage values ντο of the PM0S transistor and the NMOS transistor are -〇.5V and 〇.5V, respectively). Among them, the channel width to length ratio of PMOS transistors ΜΡ1, ΜΡ2, MP3, and MP4 are (W/L)=(2 · 0.25μηι/0.25μηι), and the channel width to length ratio of NMOS transistors ΜΝbΜΝ2 and ΜΝ3 are both (w/L)=(0.25pm/0.25Mm), the channel width to length ratio of NMOS transistor MN3 is (W/L)=(〇.25pm/8 · 0·25μιη), as a power supply 10 M311888 flow is provided PM〇Sf used by the differential amplifier 1: the channel width-to-length ratio of the current source_pM〇s transistor is (W/L)=(0.25pm/8 · 〇.25μιη), and the capacitance value of the capacitor C is _ . The peak voltage detection of this creation! In use, the _ switch can be connected in parallel across the capacitor c. The open relationship (4) provides a -discharge path, and (10) detects the peak value of the residual red charge input voltage signal. Next, [Creation Function], the voltage peak detector proposed by the author has the following effects: (1) Miniaturization: Since the voltage peak detector proposed by this creation only makes Xinlai Lai, Jian Zheng and 1 Capacitor 11, therefore, not only the circuit frame power * because =: the device confirmed by the simulation results 'definitely reduce the voltage peak value of the differential amplifier. 11 read by the simulation result, it can be effectively consumed. Motor / Xiao consumption, so it can effectively reduce the power consumption of the voltage peak detector. Although this book is specially designed for the public, anyone can understand any form of the way to describe the best embodiment selected, but familiar with the technology. Therefore, all relevant technical norms 4 = possible changes are not divorced from the spirit and scope of this creation. Changes in & π are included in the scope of the patent application of this creation. M311888 [Simple diagram of the diagram] The first diagram shows the circuit diagram of the voltage peak detector in the first prior art; the second diagram shows the transient analysis of the input voltage signal and the output voltage signal of the voltage peak detector of the first diagram. a timing diagram; a third diagram showing a circuit diagram of a voltage peak detector in a second prior art; and a fourth diagram showing a transient analysis timing diagram of an input voltage signal and an output voltage signal of the voltage peak detector of the third diagram; The fifth figure shows the circuit diagram of the voltage peak detector of the Patent No. 523592 of the Republic of China; the sixth figure shows the circuit diagram of the voltage peak detector of the preferred embodiment; the seventh figure shows the creation The transient analysis timing diagram of the input voltage signal and the output voltage signal of the preferred embodiment; the eighth figure compares the transient state of the peak voltage detector of the present invention with the voltage peak detector of the Patent No. 523592 of the Republic of China Current analysis timing diagram. [Main component symbol description] 1 Differential amplifier 2 Current mirror 3 Diode C Capacitor D Diode D1 Diode D2 Diode Id (MN3) NMOS transistor MN3 drain current 0P1 Operational amplifier OP2 Operational amplifier MP1 First PMOS transistor MP2 second PMOS transistor MP3 third PMOS transistor MP4 fourth PMOS transistor MN1 first NMOS transistor MN2 second NMOS transistor IP PMOS current source Vdd power supply voltage R1 resistor R2 resistor V ( IN) Input voltage signal V (OUT) Output voltage signal

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Claims (1)

M311888 九、申請專利範園: 1· 一種具雙充電路徑之電壓峰值檢知器,其包括: 一輸入端’用以提供一輸入電壓信號; 一輸出端,用以輸出該輸入電壓信號之峰值電壓; -電源供應賴,用以提供電壓峰值檢知器所需之電源電壓和參考接地; -差動放大H,肋較該輸人電壓健及輸㈣之輸 一充電電流錢給電流鏡,且該絲放大器具有1以提供—電祕差動獻 器使用之PMOS電流源(IP),該PM0S電流源(Ip)係由一連接成二極體形式之 PMOS電晶體所組成’亦即將該pM〇s電晶體之閘極與沒極連接在一起; •—電親’贱雜該聽放大麟提供之該充電電流錢,而提供第-充電電 流給電容器; -極體,極體之-端連接至輸人端,而另—端連至電容器,用以提供一第 二充電電流給該電容器;以及 電谷器’該電容器之-端連接至參考接地,而另一端連接至該電流鏡與該二極 體,以接受該電流鏡與該二極體所供應之該第一與該第二充電電流。 2·如申請專利範圍第1項所述之具雙充電路徑之電壓峰值檢知器,其更包括: 開關,δ亥開關係與該電容器並聯連接,用以提供一放電路徑,以便將電容器上 所儲存之電荷放電,俾利於下次輸入電壓信號之峰值檢測。 • 3·如申請專利範圍第2項所述之具雙充電路徑之電壓峰值檢知器,其中該開關係由 一金氧半電晶體所組成。 4·如申請專利範圍第1項所述之具雙充電路徑之電壓峰值檢知器,其中該差動放大 器包括: 一第一PMOS電晶體(ΜΡ1),其源極連接至電源電壓(Vdd),閘極與第:PM0S, 曰曰體(MP2)之閘極相連接,而汲極則與該電流鏡以及第—NM〇s電晶體(_丨)之汲 極相連接; 一第二PMOS電晶體(MP2),其源極連接至電源電壓(Vdd),閘極與汲極連接在一 起’並連接至第一PMOS電晶體(MP1)之閘極,而汲極則與第二丽08電晶體(麵2) 之汲極連接; 一第一NMOS電晶體(MN1),其源極與第:NM〇S電晶體(MN2)之源極以及作為 13 M311888 PMOS電流源(IP)使用之該PMOS電晶體的源極相連接,閘極用以接受該輸入電 壓信號,而汲極則與該電流鏡以及第一PMOS電晶體(MP1)i汲極相連接; 一第二NMOS電晶體(MN2),其源極與第一NMOS電晶體(MN1)之源極以及作為 PMOS電流源(IP)使用之該PMOS電晶體的源極相連接,閘極用以接受輸出端之 輸出電壓回授信號,而汲極則與該第二PMOS電晶體(MP2)之汲極相連接;以及 一PMOS電流源(IP),係由一連接成二極體形式之pM〇s電晶體所組成,亦即 將該PMOS電晶體之閘極與汲極連接在一起並連接至參考接地,而源極則與該 第一以及該第二NMOS電晶體(_1和_2)之源極相連接,該作為!>^!〇8電流源 (IP)使用之該PMOS電晶體係用以提供一電流給該差動放大器使用。 5·如申請專利範圍第4項所述之具雙充電路徑之電壓峰值檢知器,其中該電流鏡包 括: 一第三PMOS電晶體(MP3),其源極連接至電源電壓(vdd),閘極與汲極連接在一 起,並連接至第一NMOS電晶體讀丨之汲極;以及 一第izgPMOS電晶體(MP4),其源極連接至電源電壓(vdd),閘極與第三pM〇s電 晶體(MP3)之閘極連接,而汲極則與該電容器(c)以及第二丽〇8電晶體(丽幻之 閘極相連接。 6·如申請專利範圍第1項所述之具雙充電路徑之電壓峰值檢知器,其中該二極體係 由一金氧半電晶體所組成。M311888 IX. Application for Patent Park: 1. A voltage peak detector with dual charging paths, comprising: an input terminal for providing an input voltage signal; and an output terminal for outputting a peak value of the input voltage signal Voltage; - power supply, used to provide the voltage and reference ground required by the voltage peak detector; - differential amplification H, the rib is more than the input voltage and the input (four) is a charging current to the current mirror, And the wire amplifier has a PMOS current source (IP) for providing an electric differential, and the PM0 current source (Ip) is composed of a PMOS transistor connected in the form of a diode. The gate of the pM〇s transistor is connected with the immersion pole; • The electric keeper 'noisy listens to the charging current provided by the magnifying lining, and provides the first charging current to the capacitor; - the polar body, the polar body - The end is connected to the input end, and the other end is connected to the capacitor for providing a second charging current to the capacitor; and the electric grid is connected to the reference ground and the other end is connected to the current mirror With the diode, Receiving the current mirror and the first and second charging currents supplied by the diode. 2. The voltage peak detector having a dual charging path as described in claim 1 further comprising: a switch, a delta-open relationship connected in parallel with the capacitor for providing a discharge path for the capacitor to be mounted The stored charge is discharged, which is beneficial to the peak detection of the next input voltage signal. • 3. A voltage peak detector having a dual charging path as described in claim 2, wherein the open relationship consists of a MOS transistor. 4. The voltage peak detector having a dual charging path as described in claim 1, wherein the differential amplifier comprises: a first PMOS transistor (ΜΡ1) whose source is connected to a power supply voltage (Vdd) The gate is connected to the gate of the PM0S, the body (MP2), and the drain is connected to the current mirror and the drain of the first NM〇s transistor (_丨); a second PMOS The transistor (MP2) has a source connected to the supply voltage (Vdd), a gate connected to the drain and connected to the gate of the first PMOS transistor (MP1), and the drain is connected to the second MN 08. a drain connection of the transistor (face 2); a first NMOS transistor (MN1) whose source is the source of the :NM〇S transistor (MN2) and is used as a 13 M311888 PMOS current source (IP) The source of the PMOS transistor is connected, the gate is for receiving the input voltage signal, and the drain is connected to the current mirror and the first PMOS transistor (MP1) i; a second NMOS transistor ( MN2), the source is connected to the source of the first NMOS transistor (MN1) and the source of the PMOS transistor used as the PMOS current source (IP), and the gate is used for connection The output voltage of the output terminal is fed back, and the drain is connected to the drain of the second PMOS transistor (MP2); and a PMOS current source (IP) is connected by a pM connected in the form of a diode. The s transistor is composed of a gate of the PMOS transistor connected to the drain and connected to the reference ground, and the source is connected to the source of the first and the second NMOS transistors (_1 and _2) The pole phase is connected to the PMOS transistor system used by the current source (IP) to provide a current for the differential amplifier. 5. The voltage peak detector having a dual charging path according to claim 4, wherein the current mirror comprises: a third PMOS transistor (MP3) whose source is connected to a power supply voltage (vdd), The gate is connected to the drain and connected to the drain of the first NMOS transistor read ;; and an izg PMOS transistor (MP4) whose source is connected to the power supply voltage (vdd), the gate and the third pM The gate of the 〇s transistor (MP3) is connected, and the drain is connected to the capacitor (c) and the second 〇8 transistor (the phantom gate). 6. As described in claim 1 A voltage peak detector having a dual charging path, wherein the two-pole system is composed of a MOS transistor.
TW95218683U 2006-10-23 2006-10-23 Peak voltage detector having PMOS current source with dual charging paths TWM311888U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI706616B (en) * 2020-02-12 2020-10-01 新唐科技股份有限公司 Glitch detection circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI706616B (en) * 2020-02-12 2020-10-01 新唐科技股份有限公司 Glitch detection circuit
CN113252967A (en) * 2020-02-12 2021-08-13 新唐科技股份有限公司 Power supply surge monitoring circuit
CN113252967B (en) * 2020-02-12 2023-09-01 新唐科技股份有限公司 Power supply surge monitoring circuit

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