TWM310450U - SMD diode support structure and packaging structure with improved brightness - Google Patents

SMD diode support structure and packaging structure with improved brightness Download PDF

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Publication number
TWM310450U
TWM310450U TW095219509U TW95219509U TWM310450U TW M310450 U TWM310450 U TW M310450U TW 095219509 U TW095219509 U TW 095219509U TW 95219509 U TW95219509 U TW 95219509U TW M310450 U TWM310450 U TW M310450U
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TW
Taiwan
Prior art keywords
colloid
smd
base
metal
wafer
Prior art date
Application number
TW095219509U
Other languages
Chinese (zh)
Inventor
Yi-Ming Huang
Hsiang-Cheng Hsieh
Original Assignee
Lighthouse Technology Co Ltd
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Application filed by Lighthouse Technology Co Ltd filed Critical Lighthouse Technology Co Ltd
Priority to TW095219509U priority Critical patent/TWM310450U/en
Publication of TWM310450U publication Critical patent/TWM310450U/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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  • Led Device Packages (AREA)

Description

M310450 八、新型說明: 【新型所屬之技術領域】 本創作係有關於一種發光二極體之 種有關於具改善亮度之 構及封t構造,以提供製作料件)二極體支架結 【先前技術】 細易具有各易大量化製造者。 M〇 = 一圖所示,為目前市面上所販售之SMD(Suriace “ni: Dev! ce,表面黏著元件)二極 1 金㈣11上利用射出成型等之技術方式:: ::壬内凹的膠體丄2,並於膠體丄2内的其中一金屬 严ΐ i!上固設LED晶片13,在LED晶片1 3及二金 ^ : 1上連接有二導線1 4。同時,為確保LED晶 片1 3具有防靜電破壞之功效,在另一金屬支架工工上 固接靜電防護晶片i 5 ’其連接有另—導線i 4,至相 2的孟屬支木1 1上°最後’在膠體丄2内覆蓋環氧樹 脂1 6,俾以在二金屬支架工工分別施加正、負極之電 f,即可使LED晶片χ 3釋放其光線,並藉由靜電防護 曰日片1 5可防止LED晶片1 3受靜電之破壞。 惟,上述之SMD二極體封裝構造,LED晶片丄3及靜 電防護晶片1 5皆具有一定的高度存在,LED晶片丄3向 四周所釋放之光線,在膠以2内之壁緣及金屬支架工 之間反射率高,但光線經過靜電防護晶片1 5時,易 雙靜電防護晶片1 5高度之影#,產生遮光及吸光之效 應,造成反射率不佳,使二極體亮度有不均勻之攀象。 因此,為改善上述之缺失,如第二圖及第二A圖所 5 M310450 示,係為公告於西元2005年4月11日之中華民國新型 專利證書號M261831,所揭示一種「發光二極體防靜電封 裝結構」,其包含有一支架2 1,其中一面具有一凹陷2 1 1 ; 一保護元件2 2,以黏合材料2 3固定於該凹陷 2 1 1中,且連接有導線2 4至支架2 1 ; —模塑構件 2 5,封裝該凹陷2丄丄,並在該凹陷2 1丄的另一面 形成一圓弧狀凹杯2 5 i ;及一發光二極體晶片2 6, 以黏合材料23,固定於該圓弧狀凹杯251内,且連 接有一導線2 4至支架2 1上。藉以當支架2 1分別 粑加正、負極之電壓,即可使發光二極體晶片2 6釋放 光線,同¥藉由保護元件2 2與發光二極體晶片2 6相 對的岐於支架2 i中,以避免保護元件22有遮光及 吸光之效應,從而防止上述之缺失。 上述之「發光二極體防靜電封裝結構I,其膏際之盤M310450 VIII. New Description: [New Technology Field] This creation is about a type of light-emitting diode with improved brightness and sealing structure to provide the material of the diode. Technology] It is easy to have a large number of manufacturers. M〇= As shown in the figure, the SMD (Suriace “ni: Dev! ce”, surface mount component), which is currently on the market, is manufactured by means of injection molding, etc.: :: 壬 concave The colloidal crucible 2, and the LED wafer 13 is fixed on one of the metal crucibles in the colloidal crucible 2, and two wires 14 are connected to the LED chip 13 and the two gold ^: 1. At the same time, to ensure the LED The wafer 13 has the effect of anti-static damage, and the electrostatic protection chip i 5 ' is attached to another metal bracket worker, and the other wire i 4 is connected to the monarch branch of the phase 2, and finally The colloidal crucible 2 is covered with an epoxy resin 16 俾 to apply the positive and negative electric charges f to the two metal scaffolding workers respectively, so that the LED chip χ 3 can release its light, and the electrostatic protection can be used for the solar film. The LED chip 13 is prevented from being damaged by static electricity. However, the above-mentioned SMD diode package structure, the LED chip cassette 3 and the static electricity protection chip 15 have a certain height, and the light emitted by the LED chip 丄3 to the periphery is The glue has a high reflectivity between the wall edge of the inner wall and the metal support, but when the light passes through the electrostatic protection wafer 15 The double electrostatic protection chip 1 5 height shadow #, produces the effect of shading and light absorption, resulting in poor reflectivity, resulting in uneven brightness of the diode. Therefore, in order to improve the above-mentioned lack, such as the second figure and M310450, shown in Figure 5, is a "Light Emitting Diode Anti-Static Package Structure" disclosed in the Republic of China New Patent No. M261831, published on April 11, 2005, which includes a bracket 2 1 One side has a recess 2 1 1 ; a protective element 2 2 is fixed in the recess 21 1 with an adhesive material 2 3 and is connected with a wire 24 to the bracket 2 1; a molded member 25, and the recess 2 is encapsulated丄丄, and forming an arc-shaped concave cup 2 5 i on the other side of the recess 2 1 ;; and a light-emitting diode wafer 2 6 to be bonded to the arc-shaped concave cup 251 by the adhesive material 23 And a wire 24 is connected to the bracket 2 1 . Therefore, when the brackets 2 1 respectively add the voltages of the positive and negative electrodes, the light-emitting diode wafers 26 can be released with light, and the protective member 2 2 and the light-emitting diode wafers 26 are opposite to the brackets 2 i. In order to avoid the effect of light shielding and light absorption of the protective element 22, the above-mentioned deficiency is prevented. The above-mentioned "light-emitting diode anti-static package structure I, its paste plate

^卜列之缺失: 、以支架21而言, 必先利用沖壓或蝕刻等之技術 M310450 方式,才可形成所述之凹陷2 i i,當連接導線2 4之 打線製造過程中,易造成支架21有板材震1與推拉力 不足的情況,從而造成產品可靠度上之疑慮。 一、凹陷2 1 1之設計大致呈一内凹的杯狀(如第二 A圖)’ f保護元件2 2固接的銀膠,其使用量過多時^ 將產生溢膠之現象,會經由凹陷2丄丄的壁面而再 於保護元件22側邊’而產生漏電之情 短路之狀況。 生 成V:模塑構件2 5而言,不論其係何種材料所組 :之溫熔融呈液態之狀態,而加以成型封裝部 2 . ^ 、凹陷2 1 1、保護元件2 2及黏合材料 過程中,高溫易直接使黏合材料2 3產生劣 的Λ上。所述,顯見此種結構設計,是無法達到實際生產 究並::=人有感上述缺失之可改善,乃特潛… 上述缺失^本創終於提出—種設計合理且有效改4 【新型内容】 支架、ί:作其之可目 體封裝構造,I有偻古声:片及靜電防護晶片以形成二相 簡易具有更可大、冗:广到均勾化的目的’及提供製竹 Θ尺」穴1化生產 中,因溢膠之情形而發生短路因=避免於生產過程 成第二封膠的劣化。 或口回溫成型時之製程造 M310450^The missing column: In the case of the bracket 21, the recessed surface 2 ii can be formed by the technique of stamping or etching M310450, and the bracket 21 is easily formed during the manufacturing process of the connecting wire 24 There is a plate shock 1 and insufficient push-pull force, which leads to doubts about product reliability. 1. The design of the recess 2 1 1 is roughly in the shape of a concave cup (such as the second A picture). The protective glue 2 2 is fixed by the silver glue. When the amount of use is too large, the phenomenon of overflowing the glue will occur. The wall surface of the recess 2 而 and the side of the protective element 22 'has a short circuit of leakage. Form V: Molded member 2 5, no matter what kind of material is set: the temperature is melted in a liquid state, and the package part 2 is formed, ^, recess 2 1 1 , protective element 2 2 and bonding material process In the middle, the high temperature is easy to directly cause the adhesive material 23 to be inferior. As described above, it is obvious that this kind of structural design can not achieve the actual production and::= People feel that the above-mentioned missing can be improved, but the special potential... The above-mentioned missing ^ Benchuang finally proposed - a reasonable design and effective change 4 [New content 】 bracket, ί: for its eye-catching package structure, I have an ancient sound: tablets and electrostatic protection wafers to form a two-phase simple and more large, redundant: wide to the purpose of the purpose of the 'to provide bamboo rafts In the production of the ruler, the short circuit occurs due to the overflow of the rubber; the deterioration of the second sealant during the production process is avoided. Or the process of reheating the molding process M310450

Hit之目的, =體支架結構,包括m種^^善亮度之_ 的功能區,及另_ 凹而内π具有-内凹 金屬支架,係分別固接於膠;中内 的基部,及一由其 口具有一位於膠體内 基部之頂面係夂:'/I向外延伸出膠體外部的接腳部,每- 露於凹槽,且每^f功能㊣’而每-基部之底面係各顯 一金屬支架基負:之間形成有間隔區塊,以區隔出每 以及上述另一』:二:¥線,並覆蓋有-層第-封膠; 護晶片,及固n 接靜電防護晶片,且靜電防 線,並覆蓋-層第:基部之底面連接有第二導 裝構造。曰乐—封.,猎此,以構成一 SMD二極體封 本創作具有之效益: 係相蚪认藉由LED晶片固接於功能區内,而靜電防護晶片 ,二上固接於凹槽内’以避免LED晶片釋放出之光線受 以提升亮度均句化之效果。 1也反射猎 曰—、膠體與金屬支架結合後,再進行後續製程之led 曰曰片及#電防護晶片等之作業,以避免因膠 ;,,二封膠劣化,以及降低生產製造過程中之 卞’降低檢驗成本及生產製造成本等之目的,以及提供製 作簡易具有更容易大量化生產之效果。 二、藉由先形成SMD二極體支架結構,其金屬支架與 M310450 膠體之結構設計,可避免後續製 及連接第二導線之打線作業過程中,使口 防護晶片, :震盈與推拉力不足的情況, 生板The purpose of Hit, = body support structure, including m kinds of ^ ^ good brightness of the functional area, and another _ concave and inner π with - concave metal bracket, respectively fixed to the glue; the base in the middle, and a The mouth has a top surface system located at the base of the gel body: '/I extends outwardly from the outer portion of the colloid, each exposed to the groove, and each function is positive and the bottom surface of each base is Each of the apparent metal support bases is negatively formed with a spacer block therebetween to separate each of the above and the other ": two: ¥ line, and is covered with a - layer of the first sealant; the protective wafer, and the solid n connected to the static electricity The protective wafer and the static electricity proof line, and the cover layer: the bottom surface of the base is connected with the second guide structure.曰乐—封., hunting this to form an SMD diode package with the benefits of the creation: the phase is fixed by the LED chip fixed in the functional area, and the electrostatic protection chip, the second is fixed in the groove Inside 'to avoid the light emitted by the LED chip is to improve the brightness of the sentence. 1 also reflects the hunting 曰 -, after the combination of the colloid and the metal bracket, the subsequent processing of the led cymbal and the #Electrical protective wafer, etc., to avoid the degradation of the glue;, the second sealant, and reduce the manufacturing process After that, it reduces the cost of inspection and manufacturing costs, and provides the effect of making it easier to mass-produce. Second, by first forming the SMD diode support structure, the metal bracket and the M310450 colloid structure design can avoid the subsequent process and the connection of the second wire during the wire-wiring operation, so that the mouth protection wafer, : the shock and the push-pull force are insufficient Situation, raw board

慮。 紙座σ口可罪度之疑 t干四、藉由金屬支架與膠體的凹槽之間的H A #琶防護晶片使用銀料,若有溢膠之狀^冓二十: 再黏著於靜電防謹S #摘、真益 、 可1i免銀膠 考H又曰曰片側邊,错以避免有短路之情形。 為使能更進-步瞭解本創作之特徵及技術内容乂 閱以下有關本創作之詳細說明與附圖,然而所附圖式僅接 供麥考與說明用,並非用來對本創作加以限制者。 【實施方式】 請參閱第三圖及第四圖所示,係為本創作「具改善 度之SMD(表面黏著元件)二極體支架結構」,其包括有二^ 體3 0及複數個金屬支架4 〇。 夕 該膠體30外型大致呈長方型體,也可呈四方型體、 多邊型體或圓型體等,本創作並不加以限制其外型。該膠 體3 ◦—端内部形成一内凹且呈斜面設計的功"能區"$ 1,以及另一端内部形成一内凹的凹槽3 2,且該凹槽3 2尺寸可小於該功能區3 1。其中,該膠體3 〇係為不導 電性材料件,可係為聚碳酸酯(P〇lycarbonate,pc)、聚 鄰苯二曱醯胺(Polyphthalamide,PPA)、聚對苯二甲酸 丁二醇(Polybutylene Terephthal te,PBT)、聚曱其丙 烯酸曱酯(P〇lymethyl Methacrylate,PMMA),或其它已 知熱塑性樹脂等。 該等金屬支架4 0係由具導電性之材料所製成,如 M310450 銅、鐵等之金屬材料,每 -膠體3 〇中,於本創作之0 ^ U f刀別固接於該 =,然而可依實際之需求設有以 支架40。膠體30乃係利用射出成型二二金屬 製造成本。木4〇’错以可大量化地生產,從而節省 屬支架4 〇係各具有一位於膠體3 〇的功能 &31底面的基部4 υ旳功此 3 0外部的接腳…9 由基1向外延伸出膠體 1之頂面4?=::做為後續之接點。每-基部4 Τ夕广^ / 1 頦蕗於功能區3 1中,而每一美邻4 :=4 12係各顯露於凹槽3 2中。此外,每:: 之間以=間隔相鄰’藉由膠體3 〇可在每一基部4工 ”成有間隔區塊3 3,用以區隔出每 = 之極性(正、負極);經母孟屬支架40 _二極體支架結構。叙㈣,以構成本創作之 電鍍::層==架4 ◦之表面(頂、底面)可進-步 率金屬,夢以:力】圖略),如銀、金或”之高反射 二错以增加金屬支架40之光反射效率。consider. The suffocation of the paper seat σ mouth is dry. The HA #琶 protection wafer between the metal bracket and the groove of the colloid uses silver material. If there is a gel-like shape, it is adhered to the static electricity. S S pick, Zhenyi, can be 1i free silver glue test H and the side of the slap, wrong to avoid a short circuit. To enable a more in-depth understanding of the features and technical content of this creation, please refer to the following detailed description and drawings of this creation. However, the drawings are only for the purpose of the McCaw and the description, and are not intended to limit the creation. . [Embodiment] Please refer to the third and fourth figures, which is the "SMD (Surface Adhesive Element) Diode Support Structure with Improved Degree", which includes two bodies and a plurality of metals. Bracket 4 〇. The colloid 30 has a rectangular shape, and can also be a square shape, a polygonal body or a round body. This creation does not limit its appearance. The inside of the colloid 3 has a concave and beveled design of the energy " energy zone"$1, and the other end forms a concave groove 3 2, and the groove 3 2 can be smaller than the size Ribbon 3 1. Wherein, the colloid 3 is a non-conductive material, and may be polycarbonate (P), polyphthalamide (PPA), polybutylene terephthalate (polybutylene terephthalate). Polybutylene Terephthal te, PBT), P〇lymethyl Methacrylate (PMMA), or other known thermoplastic resins. The metal brackets 40 are made of a conductive material, such as M310450 copper, iron, etc., in each of the 3 colloids, the 0 ^ U f knife in the creation is fixed to the =, However, the bracket 40 can be provided according to actual needs. The colloid 30 is manufactured by using injection molding a bimetal. Wood 4〇' is erroneously produced in a large amount, thereby saving the support of the brackets 4, each having a function of the colloidal body 3 & the bottom surface of the base 31. Extending outwardly from the top surface of the colloid 1 4? =:: as a subsequent contact. Each of the bases 4 Τ 广 ^ ^ / 1 颏蕗 in the functional area 3 1 , and each beautiful 4 : = 4 12 series are exposed in the groove 3 2 . In addition, each:: is adjacent to each other at intervals of '= by colloidal 3 〇 can be worked at each base 4" to form a spacer block 3 3 for distinguishing the polarity of each = (positive, negative); The mother of the genus bracket 40 _ diode support structure. Syria (four), to form the plating of this creation:: layer == frame 4 ◦ surface (top, bottom) can advance-step rate metal, dream to: force] ), such as silver, gold or "high reflection two errors" to increase the light reflection efficiency of the metal stent 40.

明芬閱第五圖,進—H 構造。其中_其邻41 月本創作之SMD二極體封裝 ,_ 土邛4 1之頂面4 1 1上,以脒妯的闵—古 式可固接有LED晶片 场材的固疋方Mingfen read the fifth picture, into the -H structure. Among them, the adjacent SMD diode package of the 41st month, _ 邛 邛 4 1 on the top surface of the 4 1 1 , the 闵 古 古 古 古 古 古 古 古 古 古 古 古 古 古 古 古 古

晶片5 0之盤旦总叮U( P業界所%之固晶作業),LED 於同—全屬支力H =金屬支架4〇之數量而增設,也可 ,n 、,支木4 〇的基部4 1上設有多數個iFD日H 50,如固接R、G、fi三色ueds百夕數個LED曰曰片 之效果。每—LED曰片 日日片5 0,以形成白光 母咖曰曰片5〇上係連接有二第—導線η, M310450 ^分別連接至二相對且不同電極的基部 ' 1上(即打線作幻。並於,膠體3 0的功能區^面4 1 一層可透光性之第—封膠6 G 4 1内覆蓋The wafer 50 has a total of 叮U (P solid industry operation in the industry), and the LED is added in the same way as the total support H = metal bracket 4〇, or n, the branch is 4 〇 The base portion 4 1 is provided with a plurality of iFD day H 50s, such as the effect of fixing three LED slabs of R, G, and fi. Each LED 日 日 日 5 5 以 以 以 以 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰Fantasy. And, the functional area of the colloid 30, the face 4 1 layer of light transmissive - sealant 6 G 4 1 covered

晶片5 0及第一導線5 2 :業),以封裝LED 影響而損壞。避免⑽晶片50受水氣等之 其中,與固接有LED晶片5 ◦相對 底ΐ412上,可電連接(如使用銀膠)的1之 防痩晶片7 0 ’且靜電防護晶有-靜電 二晴广片5。的基部^ 冷線7 1之數量係依金屬 2弟一 支架40僅需連接-第二以= 中—金屬支架4 0固接有LED晶片5 〇,另_ : 4 〇 :其 〇固接靜電防護晶片7 〇,盆㊉ & _、盃奪支架4 別連接至相對的-全屬古加二而妾—弟二導線7 1而分 覆蓋-第二封It Λ 4〇上。之後,凹槽32内並 绫7 1 以復盍靜電防護晶片7 〇及第-婁 ==電:;::,水氣等之影^ 所述之第 本創作之SMD二極體封裝構造。 樹脂等之封=Γ〇可為環氧樹脂,膠或其它已知 進-步混合^種内係可經選擇性的 式封裝膠材件。第二封7色)等可改變顏色之混合 OH _ ^ , 不一珂月 V “、、加有擴散劑或反* y飞夂射叔子寻之混合式封裝膠材件。 另’在本創作之圖式Φ — Lrv α式中,母一接腳部4 2係各由基部 同材質的封裝膠材件,:可為:;=第二封膠6〇相 並不加以_。盆巾1 f透純或非透紐,本創作 步添加有摭……封膠8 0内可經選擇性的進- M310450 4 1向外延伸至膠體3 〇外部,而分別位於 ί开二2 W f折而貼合於膠體3 〇的底部(圖略: 以心成正向發光(T〇pVlew)型之遍二極體。或 = 接腳部4 2可各由基部4 1向外延伸至膠體/〇外部母而 '_ 3 乂开乂成侧向舍光⑻和Vlew)型之SMD二極體。 經由上述,俾以在每一接腳部4 2分別施加正、 认料至母-基部4 1並藉由第一導線5 即可使LED晶片50釋放其光線。同時,藉由二 =邊日日片7 0及第二導線7 1和相對的金屬芊 基部41連接,令LED晶片50具有靜電防護支= 避免LED晶片50受靜電之破壞而失效。 文果以 總結的說,本創作之具改善亮度之SMD二極體支 構及封裝構造,提供具有可使亮度均勾化的目的,同時^ 避免LED晶片5 〇受靜電破壞,及提供具有更容易大量化 生產之效果’以及避免在生產過程中,因膠體3 ◦成型之 ^溫^第二封膠8〇發生劣化以至於產品的可靠度有疑 問。經整理本創作具有下列之特點: 一、/本創作乃係藉由LED晶片5 〇固接於功能區3工 内’而靜電防護晶片7 0係相對的固接於凹槽3 2内,以 避免led晶片5〇釋放出之光線受靜電防護晶片7〇影 響’使光線能在功能區3 i内均句地反射,藉以提升亮度 均勻化之效果。 一、本創作之膠體3 〇與金屬支架4 〇先結合後,以 先形成SMD二極體支架結構,再進行後續製程之led晶片 12 M310450 5 0及靜電防護晶片7 〇等之作業,以避免因膠體3 〇高 溫成型時,第二封膠劣化,以及降低生產製造過程中之不 良+卩1)1低松驗成本及生產製造成本等之目的,並且提供 製作簡易更具有容易大量化之效果。 八 二、本創作藉由先形成SMD二極體支架結構,其金屬 支架4 ϋ與膠體3 ◦之結構設計,可避免後續製程之固接 靜電防護晶片7 〇,及連接第二導線7丄之打線作業過程 中’使金屬支架4 〇有產生板材震盪與推拉力不足 況’從而造成產品可靠度之疑慮。 四、本創作藉由金屬支架4 0與膠體3 〇的凹槽3 2 :間的結構設計,凹槽32的空間範圍大,及 :面^,當靜電防護晶片7◦使用銀膠時,若有狀 勒惟以上所述僅為本創作之較佳可行實施例,非因此即 内二專利範圍,故舉凡運用本創作說明書及圖式 内,合付日 1效結構變化,均同理皆包含於本創作之範圍 【圖式簡單說明】 圖為習知SMD二極體封裝構造之示意圖。 :二圖為習知S M D二極體封裝構造之另一示意 第一Λ圖為第二圖Α部份之詳圖。 回 第二圖為本創作之立體圖。 集四圖為本創作另一角度之立體圖。 13 M310450 晶片及靜電防護晶片之平面剖The wafer 50 and the first wire 5 2 are damaged by the influence of the package LED. It is avoided that (10) the wafer 50 is subjected to water vapor or the like, and is fixed to the LED wafer 5 ◦ opposite to the bottom 412, and can be electrically connected (for example, using silver glue) of the tamper-proof wafer 70' and the electrostatic protection crystal has a static electricity Qing Guang Tablets 5. The base ^ The number of cold wires 7 1 is only required to be connected by the metal 2 brother one bracket 40 - the second to = the metal bracket 40 is fixed with the LED chip 5 〇, another _ : 4 〇: its tamping electrostatic The protective wafer 7 〇, the basin 10 & _, the cup robbing bracket 4 are not connected to the opposite - all belong to the Gujia two and the 弟 two brothers wire 7 1 and the coverage - the second It Λ 4 〇. Thereafter, the groove 32 is further 绫 7 1 to reproduce the SMD diode package structure of the first created electrostatic protection wafer 7 and the first 娄 == electric:;::, water vapor, etc. The sealing of the resin or the like can be an epoxy resin, a glue or other known in-line mixing type, which can be selectively encapsulated. The second 7 colors) can change the color of the mixture OH _ ^, not a month V ", with a diffusing agent or anti-y y fly 夂 夂 叔 寻 寻 寻 寻 寻 寻 混合 混合 混合 。 。 。 。 。. The pattern Φ - Lrv α type, the mother-pin portion 4 2 is a package material of the same material from the base, which can be:; = the second seal 6 〇 phase is not added _. f pure or non-transparent, this creation step adds a flaw... The sealant 80 can be selectively extended - M310450 4 1 extends outward to the outside of the colloid 3 ,, and is located at ί 开二 2 W f fold It is attached to the bottom of the colloid 3 ( (figure: the dioxin in the form of a forward illuminating (T〇pVlew) type. Or the pin 4 4 can extend outward from the base 4 1 to the colloid/〇 The external mother and the '_ 3 乂 乂 侧 舍 舍 舍 舍 舍 舍 舍 舍 舍 舍 舍 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 经由 。 经由 经由 经由 经由 经由 经由 经由 经由The LED chip 50 can be released from the light by the first wire 5. At the same time, the LED chip 50 is electrostatically connected by the two-side solar cell 70 and the second wire 71 connected to the opposite metal base 41. Protective branch = avoid LED The film 50 is disabled by the destruction of static electricity. In summary, the SMD diode structure and package structure of the present invention with improved brightness provide the purpose of making the brightness uniform, and avoiding the LED chip 5 〇 It is damaged by static electricity, and it provides the effect of being more easily mass-produced' and avoids the deterioration of the second sealant 8 which is formed by the colloidal 3 在 in the production process, so that the reliability of the product is questionable. The finishing of the creation has the following characteristics: 1. The creation is fixed by the LED chip 5 in the functional area 3, and the electrostatic protection wafer 70 is relatively fixed in the recess 3 2 to avoid The light emitted by the LED chip 5〇 is affected by the static electricity protection chip 7〇' so that the light can be uniformly reflected in the functional area 3i, thereby improving the effect of uniformizing the brightness. 1. The colloidal 3 〇 and the metal bracket 4 of the present creation After the first combination, the SMD diode support structure is formed first, and then the subsequent processing of the led wafer 12 M310450 50 and the electrostatic protection wafer 7 〇 are performed to avoid the second sealant when the gel 3 is formed at a high temperature. Deterioration, And to reduce the badness in the manufacturing process + 卩 1) 1 low cost of inspection and manufacturing costs, etc., and provide easy to make and more easily produced. 82, this creation by first forming SMD diode The structure of the bracket, the structure of the metal bracket 4 ϋ and the colloid 3 ◦ can avoid the fixation of the static protection chip 7 后续 in the subsequent process, and the connection of the second wire 7 ' during the wire-making operation The shock and the push-pull force are insufficient, which leads to doubts about the reliability of the product. 4. The design is designed by the structure of the metal bracket 40 and the groove 3 2 of the colloid 3 ,, the space of the groove 32 is large, and: When the electrostatic protection wafer 7 is used with silver glue, if it is only the above-mentioned preferred embodiment of the creation, it is not the scope of the second patent. Therefore, the application of this creation specification and schema is used. Within the scope of this creation, all the similarities are included in the scope of this creation [Simplified illustration] The diagram shows the schematic structure of the conventional SMD diode package. The second figure is another schematic diagram of the conventional S M D diode package structure. The first figure is a detailed view of the second figure. Back to the second picture is a perspective view of the creation. The four pictures are a perspective view of another angle of the creation. 13 M310450 wafer and electrostatic protection wafer plane

第五圖為本創作固接LED 視圖。 【主要元件符號說明】 [習知] 金屬支架 11 LED晶片 13 靜電防護晶片 15 支架 2 1 保護元件 22 導線 2 4、2 4 ’ 圓弧狀凹杯 251 [本創作] 膠體 3 0 功能區 3 1 間隔區塊 33 金屬支架 40 基部 4 1 底面 4 12 膠體 12 導線 1 4、1 4 ’ 環氧樹脂 16 凹陷 2 11 黏合材料2 3、2 3 ’ 模塑構件 25 發光二極體晶片 26 凹槽 3 2 頂面 4 11 接腳部 4 2 LED晶片 5 0 第一導線 5 1 第一封膠 60 靜電防護晶片 70 第二導線 71 第二封膠 80 14The fifth picture is a fixed view of the LED. [Main component symbol description] [General] Metal bracket 11 LED chip 13 Electrostatic protection wafer 15 Bracket 2 1 Protective element 22 Conductor 2 4, 2 4 ' Arc-shaped concave cup 251 [This creation] Colloid 3 0 Functional area 3 1 Spacer block 33 metal bracket 40 base 4 1 bottom surface 4 12 colloid 12 wire 1 4, 1 4 'epoxy resin 16 recess 2 11 adhesive material 2 3, 2 3 'mold member 25 light-emitting diode wafer 26 groove 3 2 Top surface 4 11 Pin 4 2 LED wafer 5 0 First wire 5 1 First adhesive 60 Electrostatic protective wafer 70 Second wire 71 Second seal 80 14

Claims (1)

M310450 九、申請專利範圍: 1、一種具改善亮度之SMD二極體支架結構,包括: 一月爹體,其一端内部具有一内凹的功能區,及另一端 内部具有一内凹的凹槽;以及 裣數個金屬支架,係分別固接於該膠體中,且各具有 位狖4膠體内的基部,及一由該基部向外延伸出該膠體 ,j的接腳部’該等基部之頂面係各顯露於該功能區,而 =等基邛之底面係各顯露於該凹槽,且該等基部之間形成 有間隔區塊,以區隔出該等金屬支架之極性。 二極二支:σ::專利範圍第1項所述之具改善亮度之SMD 丑支木,、、口構,其中該膠體係為一不導電性材料件。 -^ Μ !;^ ^ ^ ^ ^ SMD 層。 ,、中^亥寺至屬支架表面具有金屬反射 4、如申請專利範圍第丄項所述之且改盖宾 —極體支架結構,1 ,、。儿又之SMD ,、中°亥間隔區塊係由該膠體所形成。 如申凊專利範圍第1 ^ 二極體支架結構,1 、斤I之/、改善壳度之SMD 緣。 、^寺接腳邛係位於該膠體的同一側 二極體支架沾:專::圍弟1項所述之具改善亮度之SMD 體的二側緣了構’其中該等接腳部係相對的分別位於該膠 種具改善亮度之SMD二_咖造,包名 具 一 ☆甴 βη ^ , 7 一膠體,1 一 # & * 月丑可身 及另 内部且# : 而内邛具有一内凹的功能區 門丨具有一内凹的凹槽; 肊^ 15 M310450 複數個金屬支架,係分別固接於該膠體中,且夂且 -位於該膠體内的基部’及一由該基部延伸出該膠二部 的接腳部,该寻基部之頂面係各顯露於該功能區,而該等 基部之底面係各顯露於該凹槽,且該等基部之間 隔區塊,以區隔出該等金屬支架之極性; v 曰 曰="~LEI)晶片,係固接於其中—該基部之頂面上, 且5亥LED晶片及該等基部之頂面連接有第—導線; L E D I:「封膠’係結合於該膠體的功能區内,以覆蓋該 兮美;=Γ?晶片,係與該LED晶片相對的固接於另一 且該靜電防護晶片,及固接有該⑽晶 片的基口P之底面連接有第二導線;以及 電防=^封膠’係、结合於該膠體的凹槽内,以覆蓋該靜 二極:二1!專利範圍第7項所述之具改善亮度之漏 妝、衣化,其中該膠體係為一不導電性材料件。 二極1封請專利範圍第7項所述之具改善亮度之SMD 層,冓造,其中該等金屬支架表面具有金屬反射 咖二1極^體封 =1專=圍第7項所述之具改善亮度之 1 衣構w,其中該間隔區塊係由該膠體所形成。 SMD二極1體專=圍第/項所述之具改善亮度之 一側緣。 以/、中该等接腳部係位於該膠體的同 1 2如申請專利範圍第7項所述之具改善亮度之 16 ]V1310450 _ ’ ^顚義峨分別位於 •娜二1極3體第/項所述之具改善亮度之 膠之封切材件Λ,、膠料環氧樹脂或石夕 -二1極4體:以 有1粉之混合式封裝踢材Γ。一封朦内經選擇性的混合 ,二二封7項所述之具改善亮度之 有擴散劑或反射粒子之混合選擇性的添加 17M310450 IX. Patent application scope: 1. An SMD diode support structure with improved brightness, comprising: a January body having a concave functional area at one end and a concave groove at the other end And a plurality of metal brackets respectively fixed in the colloid, and each having a base in the colloid 4, and a colloid extending outward from the base, the pin portion of the j' The top surfaces are each exposed in the functional area, and the bottom surfaces of the bases are exposed to the grooves, and spacers are formed between the bases to distinguish the polarity of the metal supports. Two poles and two poles: σ:: SMD ugly branching wood with improved brightness as described in Item 1 of the patent scope, wherein the glue system is a non-conductive material. -^ Μ !;^ ^ ^ ^ ^ SMD layer. , ^ ^ Hai Temple to the surface of the stent has a metal reflection 4, as described in the scope of the patent application, and modified the guest-pole body structure, 1, . In addition, the SMD, and the middle interval block are formed by the colloid. For example, the application of the patent range 1 ^ diode support structure, 1, jin I /, improve the SMD edge of the shell. , ^ 寺 接 邛 位于 位于 同一 同一 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The SMD two coffee makers with improved brightness in the rubber type, the package name has a ☆ 甴βη ^ , 7 a colloid, 1 a # & * month ugly and another internal and # : and the inner 邛 has a The recessed functional area threshold has a concave recess; 肊^15 M310450 a plurality of metal brackets respectively fixed in the colloid, and - a base portion in the gel body and a portion extending from the base And the top surface of the base portion is exposed in the functional area, and the bottom surfaces of the base portions are respectively exposed in the groove, and the partitioning blocks of the base portions are separated by The polarity of the metal holders; v 曰曰 = " ~ LEI) wafers are fixed therein - on the top surface of the base, and the 5th LED chip and the top surface of the base are connected with a first wire; LEDI: "sealing" is incorporated into the functional area of the gel to cover the beauty; = Γ? wafer, with the LE The D wafer is oppositely fixed to the other and the static protection wafer, and the bottom surface of the base P to which the (10) wafer is fixed is connected with the second wire; and the electrical protection is sealed, and the concave is bonded to the gel. In the tank, to cover the static two poles: the heat leakage coating and the clothing according to the seventh item of the patent scope, wherein the rubber system is a non-conductive material. The SMD layer with improved brightness according to Item 7 is manufactured, wherein the surface of the metal support has a metal reflective surface, and the surface of the metal frame is improved. w, wherein the spacer block is formed by the colloid. SMD dipole 1 body special = one of the side edges of the improved brightness is one side of the edge of the colloid. With the improvement of brightness as described in Item No. 7 of the Patent Application No. 7, V1310450 _ ' ^ 顚 峨 位于 位于 • 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜 娜Λ,, rubber epoxy resin or Shi Xi - two 1 pole 4 body: in a mixed package with a powder of 踢 Γ. Mixing of the twenty-two 7 having improved brightness with a diffusing agent or a mixture of selective reflection particles 17 added
TW095219509U 2006-11-03 2006-11-03 SMD diode support structure and packaging structure with improved brightness TWM310450U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI403006B (en) * 2009-01-15 2013-07-21 Everlight Electronics Co Ltd Light emitting diode and method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI403006B (en) * 2009-01-15 2013-07-21 Everlight Electronics Co Ltd Light emitting diode and method for fabricating the same

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