M307625 八、新型說明： 【新型所屬之技術領域】 · :用長關一種長晶爐之_蓋結構改良，旨在解決習 市j u難因而不易控制拉晶品質之課題。 【先前技術】 按，一般晶圓種類可以分為氧化物晶圓（如uTa〇3、 § L刪3、Ll2B4〇3、La3Ga5S‘、則” Zn〇 等）、化合物晶圓（如 GaAs AIN、InAs等）與矽晶圓。其中除了矽晶圓由於容易取 知—廣為應用在半導體IC製造上，為社會大眾所耳熟能詳外， 匕應用於，私、光纖通訊、無線通訊等產業所需的關鍵元件 -2如·表面箄波器、通訊IC、光纖連接器、高密度波長功分波 -為、叙光一極體與雷射二極體等），需要高品質的氧化物或化 合物晶圓’做為7C件製造所需的基板材料。目前超高亮度白/ 監光LED的品質取決於氮化鎵磊晶（GaN)的材料品質，而氮化 籲鎵磊晶品質則與使用的藍寶石基板表面加工品質息息相關，藍 寶石（AhO3)由於晶體結構與GaN近似，同時符合GaN磊晶製程 中耐咼溫的要求，使得藍寶石晶圓成為製作白光/藍LED的關 鍵材料。 如第一圖所示即為一般利用柴氏長晶法（Cz〇chralski Method)形成藍寶石晶體之結構示意圖，該長晶爐丄〇設備當 中’係在掛禍11外圍設有提供對内部原料保溫效果之保溫層 1 6，且其保溫層1 6之高度係相對於坩堝1 1内晶體2 〇拉 起之高度，以及於坩堝1 1的週邊設有對坩堝丄丄内部的原料 M307625 進$加熱的加熱器i 2，另外在加熱器工2以及坩鍋1 i的外 圍叹有絕緣層1 3，將氧化紹溶，液置放於掛禍工工+，然後把 欲長晶之晶種（seed)插入氧化銘的液面，之後再將該晶種緩慢 1出形成晶體；惟該長晶爐1中並無熱遮蔽裝置之設置，使加 川、器1 2之熱源容易自1上方之開口溢出，使掛禍1 1 θ區域，皿度梯度不稳定而不利氧化物晶圓長晶環境。 立r Γ如第一圖所不’亦即於長晶爐1中裝設有熱遮蔽裝置， :係為㈣蓋14之結構蓋設於i上方之開口處，並設 敎尸们tr棒2 0通過的開口141，藉以構成長晶爐10的 熱场，、減少熱源的流失藉以降低晶棒的製造成本。 ]1夕L自用賴Ή之開σ 141處底部係僅貼於掛鋼 與門口 二且坩堝盖14相對應於開口141外側之内徑 二广尺寸差距太大’不具有調節溫度之作用，導致 :::二41内外側的溫差過大，當晶棒20脫離原 溫产差里.ίΓ呂液面）之瞬間即與外部的冷空氣接觸， 度差異太大，因而不易控制拉晶品質。 【新型内容】 =於此’本創作即針對_蓋結構 度梯度調節作用與熱帷幕效 良 坩堝蓋結構。 和以獲致較佳拉晶品質之 該二=:;fr禍反方向延伸-適當距離，或者 型或等徑 呵度5周整與逐漸改變的内 M307625 徑 而凋整熱場之咼度範圍，以及調節坩堝内溫度之作用，使 長晶時容易控制拉晶品質。 ， 【實施方式】 本創作「長晶爐之_蓋結構改良」，其㈣蓋係設於長 曰曰爐之掛_ 口處，主要具有溫度梯度調節作 用；如第三圖所示，整個長晶爐10基本上，係在㈣^外 圍設妓供對㈣原料保溫效果之保溫層16，且其保溫層工 6之高度係相對於㈣i i内晶體2 Q拉起之高度，以及於掛 1韵週邊設有對掛則i内部的原料進行加熱的加熱器 2相鋼1 1之材質可以為純度高於9 5 %之金屬錶、钥 ’鎢材g、，且其賴丨丨之外型可以為圓形桶狀或圓柱桶身， 而底部可為錐狀、弧形或平坦之結構體，另加孰 及掛禍u的外圍設有絕緣層13，並且在上= ❶有―個掛禍蓋1 5，其㈣蓋1 5之材質可以為純度高於9 5 2金屬鈒、錮或鎢之材質，或由耐熱陶莞材（抓或八_ :成’該坩堝蓋i 5並設有一供晶棒2 〇通過的開口工5工， =構成長晶爐1〇的熱場，減少熱源的流失藉以降低晶棒的 j成本；另外，其用以將加熱器丄2以及賴工丄外圍的絕 :上1 3下方係設有通氣孔丄3丄，用以產生通過長晶爐熱場 一，以將容易形成的雜質排出；而晶體成長時一般以氬氣、 =氣14 3里5/。以下之氧氣為保護氣氛，或用真空裝置保 長晶環境。 _ H其重點在於：_蓋！ 5係為如第三圖及第四圖所示之其 :σ 1 5 1處朝_ i 2反方向延伸一適當距離Η，以形成一 保溫區段八’而該掛禍蓋1 5之外型亦可如第五圖及第六圖所 7 哪撒！ 51之内徑M307625 VIII. New description: [New technical field] · : The use of Changguan, a type of crystal growth furnace, is designed to solve the problem that it is difficult to control the quality of crystal pulling. [Prior Art] According to the general wafer type, it can be divided into oxide wafers (such as uTa〇3, §L3, Ll2B4〇3, La3Ga5S', then Zn〇, etc.), compound wafers (such as GaAs AIN, InAs, etc.) and germanium wafers, which are easy to know except for germanium wafers, are widely used in semiconductor IC manufacturing, and are familiar to the public, and are used in industries such as private, optical fiber communication, and wireless communication. Key components - 2 such as surface choppers, communication ICs, fiber optic connectors, high-density wavelength power splitting - for Spiegels and laser diodes, etc.) require high quality oxide or compound wafers 'As the substrate material required for the manufacture of 7C parts. The quality of ultra-high brightness white/light-emitting LEDs currently depends on the material quality of gallium nitride epitaxial (GaN), while the nitriding quality of gallium-emitting and sapphire is used. The surface processing quality of the substrate is closely related. The sapphire (AhO3) is similar to GaN in crystal structure, and meets the requirements of GaN temperature resistance in the GaN epitaxial process, making the sapphire wafer a key material for making white/blue LEDs. Is general A schematic diagram of the structure of the sapphire crystal formed by the Cz〇chralski method, in which the insulating layer of the crystal growth furnace is provided with an insulating layer for providing insulation effect on the internal raw materials, and The height of the insulating layer 16 is relative to the height of the crystal 2 〇 in the 坩埚1 1 , and the heater i 2 for the inner material M307625 is heated around the 坩埚1 1 , and heated The outer part of the pottery 2 and the crucible 1 i sighs the insulating layer 13 , which is oxidized and dissolved, and the liquid is placed in the workmanship +, and then the seed crystal of the crystal is inserted into the liquid surface of the oxidized body. Then, the seed crystal is slowly removed to form a crystal; however, there is no heat shielding device in the crystal growth furnace 1, so that the heat source of Kagawa and the device 1 is easily overflowed from the opening above the first one, so that the 1 1 θ region is suspended. The gradient of the gradient is not favorable for the oxide wafer growth environment. The vertical r is not as shown in the first figure, that is, the heat shield is installed in the crystal growth furnace 1, and the structure cover is (4) cover 14. It is located at the opening above i, and is provided with an opening 141 through which the scorpion tr rod 20 passes, thereby forming a crystal growth furnace. 10 thermal field, reduce the loss of heat source to reduce the manufacturing cost of the ingot.] 1 L L self-use Lai Ή open σ 141 at the bottom is only attached to the hanging steel and door 2 and the cover 14 corresponds to the outside of the opening 141 The inner diameter of the inner and outer dimensions is too large to have a function of adjusting the temperature, resulting in the::: the temperature difference between the inner and outer sides of the second 41 is too large, when the crystal rod 20 is separated from the original temperature difference, the moment is the external The cold air contact, the degree difference is too large, so it is difficult to control the pull crystal quality. [New content] = This 'this creation is aimed at the _ cover structure gradient adjustment function and the thermal curtain effect good cover structure. The two of the crystallized quality =:; fr fring the opposite direction - the appropriate distance, or the type or equal diameter of the 5 weeks and gradually changing the inner M307625 diameter and the temperature range of the full thermal field, and adjusting the temperature inside the crucible Its role is to make it easy to control the crystal pulling quality when crystal growth. [Embodiment] The creation of the "Crystal Furnace _ Cover Structure Improvement", the (4) cover is located at the hang of the long kiln, mainly with temperature gradient adjustment; as shown in the third figure, the entire length The crystal furnace 10 is basically provided with a thermal insulation layer 16 for the thermal insulation effect of the (four) raw materials in the periphery of (4), and the height of the thermal insulation layer 6 is relative to the height of the crystal 2 Q in the (iv) i i, and the hanging height 1 Around the rhyme, there is a heater for heating the material inside the hanging i. The material of the phase 2 steel 1 1 can be a metal watch with a purity higher than 9.5 %, a key 'tungsten material g, and its appearance. It can be a circular barrel or a cylindrical barrel, and the bottom can be a tapered, curved or flat structure. The outer layer of the cymbal and the cymbal u is provided with an insulating layer 13, and there is a hang on the top = ❶ The cover of the cover 1 5, the material of the (4) cover 1 5 may be a material with a purity higher than 9 5 2 metal tantalum, niobium or tungsten, or a heat-resistant pottery material (grab or eight _: into the lid i 5 and one for The opening of the ingot 2 〇 through the work, = constitutes the thermal field of the crystal growth furnace 1 减少, reducing the loss of heat source to reduce the cost of the ingot; The utility model is characterized in that the heater 丄2 and the periphery of the 丄 丄 : 上 上 上 上 上 上 上 上 上 上 上 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄When growing, it is generally argon gas, = gas 14 3 liters 5 /. below the oxygen as a protective atmosphere, or use a vacuum device to maintain the crystal environment. _ H its focus is: _ cover! 5 series as the third and fourth The figure shows: σ 1 5 1 extends in the opposite direction of _ i 2 by an appropriate distance Η to form a heat-insulating section VIII and the shackle cover 1 5 can also be as shown in the fifth and sixth Figure 7 where to sprinkle! 51 inner diameter
型結體4是如第七圖及第 爐1㈣南度逐漸擴張的V 長晶爐10的高度逐漸縮減v =開^51之内徑隨著 或者隨著高度逐漸改變的内 ^了料利用該保溫區段 調節溫度之作用。 工L長熱场之高度範圍，以及達到 據以，當使晶棒2 〇脫離原料液 〇之熱場保溫作用’避免瞬 二長晶爐1 品質，可適用之晶棒2 〇材料包較谷易控制拉晶 物（如：砰化鎵）、半導體M氧化物（如：氧化銘）、化合 (如：AglnSbTe).再去二 、、者）、金屬（如：銅）與合金 ，再者，可進_ 一 的區段處設置若干通氣孔上 二⑩5内徑逐漸變化 孔152形成分流作用，能夠有效排 部氣體的流動更為順幅·少甘 ，、 使長日日爐1 〇内 m , 杨，尤其，能夠有效降低晶棒2。用鬥沾 乱饥里，減少氣體對固液界面之影響。 周圍的 ::σ亥坩堝盍工5之結構可由複數個内 〇的廣張的ν型結體所組成 不，或者如第十二圖所示，i =及弟十—圖所 徑隨著長晶爐1 0的古库、/、:皿1 5 構可由複數個内 敫坩堝苗]=、间又、漸縮減的V型結體所組成 ::禍1 5與_ i i開口處之距離，以及 二 1之口徑大小。 《 Π现開口1 5 如上所述，本創作提供長晶爐另一較佳 構，麦依法提呈新型專利之申請；惟，以上之實施結 係本創作較佳實施例者，並非以此偈 ^式 舉凡與本創作之構造、以、特徵等近似、f同者， 創作之創設目的及申請專利範圍之内。 纟應屬本 M307625 【圖式簡單說明】 第一圖係為一種習用長晶爐之結立 ::圖係為另一種習用長晶爐之結：：：图。 第三圖係為本創作第—實施例之：：：： 第四圖係為本創作第—實關之轉考圖' 第五圖係為本創作第二實施例之^==The shaped body 4 is such that the height of the V crystal growth furnace 10 gradually expanding as shown in the seventh figure and the first furnace (fourth) is gradually reduced by v = the inner diameter of the opening 51 is changed with or gradually with the height. The heat preservation zone adjusts the temperature. The height range of the long thermal field of the worker L, and the thermal field insulation effect of the crystal rod 2 〇 when the crystal rod 2 〇 is removed from the raw material liquid ' 'avoid the quality of the instant crystal furnace 1 , the applicable crystal rod 2 〇 material package Easy to control crystallographic (such as: gallium antimonide), semiconductor M oxide (such as: oxidation), compound (such as: AglnSbTe). Then go to two, and), metal (such as: copper) and alloy, and then , a plurality of vent holes may be provided in the section of the first section, and the inner diameter of the inner diameter of the first and second inner diameters of the first and second inner diameters are 152, and the flow of the gas is more effective, and the flow of the gas is more smooth and less. m , Yang, in particular, can effectively reduce the ingot 2 . Use the bucket to smother the hunger and reduce the effect of gas on the solid-liquid interface. The structure of the surrounding:: 坩埚盍海坩埚盍工5 can be composed of a plurality of ν-shaped ν-shaped knots of the inner 不, or as shown in the twelfth figure, i = and the younger The ancient library of the crystal furnace 10, /,: the dish 1 5 structure can be composed of a plurality of inner seedlings =, and the V-shaped knots which are tapered and reduced: the distance between the openings 1 and _ ii, And the size of the two 1 size. Π 开口 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 ^ The formula is similar to the structure, the purpose, the characteristics, etc. of the creation, the same purpose, the creation purpose of the creation and the scope of patent application.纟 should belong to this M307625 [Simple description of the diagram] The first picture is a combination of a conventional crystal furnace: The picture is the junction of another conventional crystal furnace:::Fig. The third picture is the first embodiment of the creation:::: The fourth picture is the transfer test of the first-reality of the creation. The fifth picture is the second embodiment of the creation. ^==
弟七圖係為本創作第三實施例之卜S體圖。 〜圖係為本創作第三實施例之。 ^九圖係為本創作第四實施例之_蓋立二。 第十圖係為本創作第五實施例之掛 =圖。 第十-圖係為本創作第五實施例之心用，考圖。 第十二圖係為本創作第五實施例之‘使 【主要元件代表符號說明】 1 —長晶爐 1 1 ——坩鍋 1 2〜一加熱器 13 —一隔熱層 1 4——坩堝蓋 1 4 1 一開口 1 5——坩堝蓋 1 5 1 -開口 1 5 2 —通氣孔 1 6——保溫層 2 〇 晶棒The seventh figure is the S body diagram of the third embodiment of the creation. The figure is the third embodiment of the creation. ^ Nine diagrams are the fourth embodiment of the creation of the creation of the second. The tenth figure is the hanging map of the fifth embodiment of the present creation. The tenth-picture is the heart of the fifth embodiment of the creation. The twelfth figure is the fifth embodiment of the present invention. [Making the main component representative symbol description] 1 - The crystal growth furnace 1 1 - the crucible 1 2 ~ a heater 13 - a thermal insulation layer 1 4 - 坩埚Cover 1 4 1 Open 1 5 - Cover 1 5 1 - Opening 1 5 2 - Vent 1 6 - Insulation 2 Twine