TWM265760U - Structure for wafer inspection apparatus - Google Patents

Structure for wafer inspection apparatus Download PDF

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Publication number
TWM265760U
TWM265760U TW93215268U TW93215268U TWM265760U TW M265760 U TWM265760 U TW M265760U TW 93215268 U TW93215268 U TW 93215268U TW 93215268 U TW93215268 U TW 93215268U TW M265760 U TWM265760 U TW M265760U
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Taiwan
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wafer
light
light source
patent application
data
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TW93215268U
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Chinese (zh)
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Jung-Hsiang Hsu
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Gainner Technological Co Ltd
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Publication of TWM265760U publication Critical patent/TWM265760U/en

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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Description

M265760 創作說明(1) 圓 新型所屬之技術領域】 本創作係有關一種檢測器,特 上不良晶片數量及區域之晶片檢 別是有關一種可檢測 測裝置結構。 晶 【先前技術】 按’隨著微 製造過程及方法 整體的仍有3%的 光區」、「沉積 區」及「測試區 述製程的任何一 完全等特點,所 或經由測試區所 前只能利用人工 圓中挑出剃除, 沒有效率的,因 少不良晶片或是 在製程成本上不 如何得知不良晶 待解決的問題。 有鑑於此 檢測裝置結構 利時代的來 ,使產品的 不良率,在 區」、「擴 」等各流程 區,而這些 以在色澤上 檢測出不符 目視的方式 這挑出不良 為業者本身 那些是不良 少的浪費, 片的數目及 臨’電子產業皆 不良率降低及產 電子晶片製造上 散區 j 植入 ’這些不良率可 不良晶片可能有 會與良好的晶片 客戶規格而點上 ’將那些不良的 晶片的工作係非 無法精確控制一 晶片的區域,這 所以在改善產品 不良晶片的區域 係不斷 量提高 大致會 區」、 能係來 刮傷或 有少許 墨水, 晶片從 常浪費 晶圓上 些缺點 良率的 是現在 t創作係針對上述之問題 ^有效解決上述之問題。 提出 種晶片 M265760M265760 Creative Instructions (1) The new type of technical field] This creative is related to a detector, especially the number of defective wafers and the area of the wafer inspection is a structure of a detectable detection device. Crystal [Previous technology] According to 'there is still 3% of the light area as a whole along with the microfabrication process and method', "deposition area" and "test area, any one of the process described in the process is complete, etc. Can use the artificial circle to pick out the shave, there is no efficiency, because there are few defective wafers or the problem of how to know the defective crystals in the cost of the process to be solved. In view of the advantages of the structure of this detection device, the product is defective. Rate, in the district "," expansion "and other process areas, and these are based on the detection of non-visual ways on the color and this is to choose the bad as the industry itself, which is a waste of less bad, the number of films and the electronics industry are bad Decreasing the rate and implanting of electronic wafers on the manufacturing area. 'These defective rates may cause defective wafers to meet the specifications of good wafer customers.' The work of those defective wafers is not to control the area of a wafer. Therefore, in the area where the defective wafer is improved, the volume is continuously increased and the general area is increased. "It can be scratched or there is a little ink. Some of the shortcomings on the wafer are the yield rate. At present, the author is tackling the above problems ^ effectively solving the above problems. Proposed seed chip M265760

【新型内容】 本創作之主要目的,係在提供一種晶片檢測裝置結 構’藉由感光裝置接收來自於晶圓之反射光線,利用$ 計算出不良晶片的數量及區域,進而使移除不良曰 程更為方便。 日日乃的裝 本創2之另一目的,係在提供一種晶片檢測裝置結 構,藉由得知晶圓上不良晶片的數量及區域,使業者 造晶片過程中更能掌握造成不良晶片的原因,而 良率增加。 之日日片 根據本創作,一種晶片檢測 圓上不良晶片 一腔室,在此 係由複數晶片 之數量 腔室内 所構成 裝置結 及位置,此種晶片 設有一平台,用以放置晶 ,在腔室内且在此平台一 構’用以檢測一 檢測裝 曰曰 第一光源,此第一光源可調整一角度發射一第 圓上,此晶圓 線光線反射出 裝置,用以接 數據資料傳輪 收此數據資料 底下藉由 容易瞭解本創 效0 之每一晶片接收第一光線 去’而在腔室内且位於晶 收每一晶片所反射 出去,將感光裝置 並且將其處理轉換 具體實施例配合所附的圖 作之目的、技術内容、特 之第二 連接一 成一不 後轉換 圓上方 光線並 計算裝 良晶片 式詳加 點及其 置結構包括 圓,此晶圓 端上樞接一 一光線至晶 為一第二光 設置一感光 且轉換為一 置,用以接 數據。 說明,當更 所達成之功[New content] The main purpose of this creation is to provide a wafer inspection device structure 'receive the reflected light from the wafer by a photosensitive device, use $ to calculate the number and area of defective wafers, and then remove the defective process. More convenient. Another purpose of Rinnai's installation of the Gen2 is to provide a wafer inspection device structure. By knowing the number and area of defective wafers on the wafer, the industry can better understand the causes of defective wafers during the wafer manufacturing process. , And the yield increases. According to the author of this article, a wafer is a cavity for detecting defective wafers on a circle. Here, it is a device junction and position composed of a plurality of wafers in the cavity. This wafer is provided with a platform for placing crystals in the cavity. Indoor and on this platform, a structure is used to detect a detection device. The first light source can be adjusted at an angle to emit on a first circle. The wafer line light reflects out of the device and is used to access the data transmission wheel. After receiving this data, it is easy to understand that each wafer of this effect 0 receives the first light to be reflected by each wafer in the cavity and located in the crystal harvester. The photosensitive device and its processing are converted into specific embodiments. The purpose of the attached drawing, the technical content, and the special second connection are to convert the light above the circle and calculate the detailed addition point of the wafer and its structure including the circle. The wafer end is pivotally connected to the light to The crystal sets a light for a second light and converts it into a light for receiving data. Explain that when more

M265760M265760

四、創作說明(3) 【實施方式】 本創作係一種晶片檢測裝置結構’睛參閱第一圖所 示,提供一晶圓1 0放置入此種晶片檢測裝置結構内,此晶 圓1 0具有複數晶片12,而此種晶片檢測裝置結構可檢測此 晶圓1 0上不良晶片之數量及位置,此晶片檢測裝置結構包 括一腔室13,此腔室13中設有一透光材質之平台14,在平 台14的一端樞接一第一光源16,此第一光源16係為冷陰極 管(Cold Cathode Fluorescent Lamp,CCFL)、發光 體(Light Emitting Diode,LED)或光纖導引之冷光源 (Luminescent Optical Fiber)其中之一者;此第一光源 16可調整1〇度至80度之間的角度,用以發射一第一光線至 此晶圓1 0上,此晶圓1 〇接收第一光線後轉換為一第二光線 反射出去,另外在平台14下且位於此腔室13内設置一第二 光源1 8,而此第二光源1 8發出之光線可穿過每一晶片J 2之 間的空隙,使晶圓1 〇上的每一晶片丨2相互區隔,其中第二 光源1 8係為冷陰極管、發光二極體或光纖導引之冷光源所 構成;而在腔室13内且位於晶圓ι〇上方設置一感光裝置 2 0 ’用以接收晶圓丨〇上每一晶片丨2反射之第二光線,並且 將其轉換為一數據資料傳輪出去,此感光裝置2〇係由電荷 耦口元件(Charge-Coupled Device,CCD )及互補式金屬 氡^半導體感應器(CMOS Sensor)其中之一者所構成, 接著將此感光裝置20利用線路連接位於腔室13外的一計算 =置22 ’此計算裝置22係為一電腦,用以接收此數據資 "並且將其處理轉換成一不良晶片數據顯示在電腦螢幕4. Creation Description (3) [Embodiment] This creation is a structure of a wafer inspection device. Referring to the first figure, a wafer 10 is provided to be placed in this wafer inspection device structure. This wafer 10 has Multiple wafers 12, and this wafer inspection device structure can detect the number and location of defective wafers on the wafer 10, the wafer inspection device structure includes a chamber 13, and a cavity 14 is provided in the chamber 13 A first light source 16 is pivotally connected to one end of the platform 14. The first light source 16 is a Cold Cathode Fluorescent Lamp (CCFL), a Light Emitting Diode (LED), or an optical fiber guided cold light source ( Luminescent Optical Fiber); the first light source 16 can adjust the angle between 10 degrees and 80 degrees, for emitting a first light onto the wafer 10, the wafer 10 receives the first light It is converted into a second light and reflected out, and a second light source 18 is set under the platform 14 and located in the cavity 13, and the light emitted by the second light source 18 can pass between each wafer J 2 Gaps so that each of the wafers The wafers 2 are separated from each other, and the second light source 18 is composed of a cold cathode tube, a light emitting diode, or a fiber-guided cold light source; and a photosensitive device is provided in the chamber 13 and above the wafer ι. 2 0 'is used to receive the second light reflected from each wafer on the wafer, and convert it into a data data transmission wheel. The photosensitive device 20 is a charge-coupled device , CCD) and a complementary metal semiconductor sensor (CMOS Sensor), and then this photo-sensitive device 20 is connected to a calculation located outside the chamber 13 by means of a line = set 22 'this computing device 22 is A computer to receive this data " and process it into a bad chip data to display on the computer screen

M265760 四、創作說明(4) 24上,此不良晶 晶片之區域。 本創作使用 14上, 調整第 上每一 良晶片 不良晶 而感光 光線強 出不良 區域。 強度差 良晶片 更能掌 惟 實施例 解本創 範圍。 特徵及 請專利 將第一光 一光源1 6 晶片1 2反 表面因製 片與良好 裝置20接 度的差異 晶片數據 所以本創 異,計算 的製程更 握造成不 以上所述 說明本創 作之内容 舉凡運用 精神所為 之範圍内 時先將一具有 源1 6及第二光 的照射角度, 射之第二光線 造時受到到傷 晶片在反射第 收晶片1 2反射 轉換成一數據 包括不良晶片 作藉由不良晶 出不良晶片的 為方便,而且 良晶片的原因 之實施例僅為 作之特點,其 並據以實施, 本創作申請專 之均等變化及 片數據包括不良晶片數量及此晶圓上不良 複數晶片的晶圓放置在平台 源1 8開?並調整亮度,再將 使感光裝置20能接收晶圓10 ’其中在複數晶片12中的不 或擴散不完全的影響,造成 二光線時會有強度的差異, 之第二光線時,將這些第二 資料’再由計算裝置22計算 數量及此晶圓上不良晶片之 片與良好晶片反射第二光線 數量及區域,進而使移除不 可使業者在製造晶片過程中 ’進而使晶片良率增加。 本創作之較佳實施例,藉由 目的在使熟習該技術者能暸 並非用以局限本創作實施之 利範園所述之構造、形狀、 修飾’皆應包括於本創作申M265760 Fourth, the creation description (4) 24, the area of this bad wafer. In this work, I used 14 adjustments to adjust the bad crystals on each of the good wafers and the sensitive light was out of the bad area. The difference in strength is good and the chip can better control the scope of the invention. Features and patents: The first light-light source 16 wafers 12 and the reverse surface of the wafer are different due to the difference between the wafer and the good device 20 wafer data. Therefore, the original process is different. The calculation process is more difficult to explain than the above description. When using the range of the spirit, firstly, a source with an irradiation angle of 16 and the second light, the second light that is emitted is damaged when the wafer is reflected, and the reflection of the received wafer is converted into a data including a bad wafer. It is convenient for the bad crystals to form bad wafers, and the examples of the reasons for good wafers are only for the purpose of implementation, and they are implemented based on this. The creative application specifically changes and the piece data includes the number of bad wafers and the number of bad wafers on this wafer. Wafer placement of wafers on the platform source 1 8? And adjust the brightness, so that the photosensitive device 20 can receive the influence of the incomplete or diffused in the plurality of wafers 12, which causes a difference in the intensity of the two light rays, and the second light, the first light The second data 'is calculated by the computing device 22 and the number and area of the second light reflected by the bad wafer and the good wafer on the wafer, so that the removal cannot make the industry in the wafer manufacturing process' and thus the wafer yield is increased. The preferred embodiment of this creation is intended to enable those skilled in the art to use it. The structure, shape, and modification described in Li Fan Yuan, which is not intended to limit the implementation of this creation, should be included in this creation application.

M265760 圖式簡單說明 【圖式簡單說明】 第一圖為本創作之立體示意圖。 第二圖為本創作之剖面示意圖。 【主要元件符號說明】M265760 Schematic description [Schematic description] The first image is a three-dimensional schematic drawing of the creation. The second picture is a schematic cross-section of the creation. [Description of main component symbols]

10 晶圓 12 晶片 13 腔室 14 平台 16 第一光源 18 第二光源 20 感光裝置 22 計算裝置10 wafer 12 wafer 13 chamber 14 platform 16 first light source 18 second light source 20 light sensing device 22 computing device

Claims (1)

M265760 五、申請專利範圍 1、 一種晶片檢測裝置結構,用以檢測一晶圓上不良晶片 之數量及位置,該晶片檢測裝置結構包括: 一腔至’其係設有一平台’用以放置該晶圓,該晶圓 由複數晶片所構成; 一第一光源,其係設置在該腔室内,該第一光源係拖 接在該平台一端上,該第一光源可調整一角度發射一第— 光線至該晶圓上,該晶圓之每一晶片接收該第一光線後轉 換為一第二光線光線反射出去; 一感光裝置’其係設置在該腔室内且位於該晶圓上 方,用以接收每一該晶片所反射之該第二光線,並且轉換 為一數據資料傳輸出去;以及 一計算裝置,其係與該感光裝置連接,用以接收該數 據資料,並且將該數據資料處理轉換成一不良晶片數據。 2、 如申請專利範圍第1項所述之晶片檢測裝置結構,其 中,該腔室内且位於該平台下更設置一第二光源,用以使 每一該晶片區隔。 3、 如申請專利範圍第2項所述之晶片檢測裝置結構,其 中,該平台下設置該第二光源時,該平台係可透光之材 質。 4、 如申請專利範圍第2項所述之晶片檢測裝置結構,其 中,該第二光源係為冷陰極管、發光二極體或光纖導弓丨之 冷光源。 5、 如申請專利範圍第1項所述之晶片檢測裝置結構,其 中,該第一光源係為冷陰極管、發光二極體或光纖導弓丨之M265760 5. Scope of patent application 1. A wafer inspection device structure for detecting the number and location of defective wafers on a wafer. The wafer inspection device structure includes: a cavity to 'it is provided with a platform' for placing the wafer The wafer is composed of a plurality of wafers. A first light source is disposed in the chamber, and the first light source is dragged on one end of the platform. The first light source can be adjusted to emit an first light. On the wafer, each wafer of the wafer receives the first light and converts it into a second light. The light is reflected out; a photosensitive device is disposed in the chamber and above the wafer for receiving. The second light reflected by each of the chips is converted into a data file for transmission; and a computing device connected to the light sensing device for receiving the data data and converting the data data into a bad one Wafer data. 2. The wafer inspection device structure described in item 1 of the scope of the patent application, wherein a second light source is further provided in the chamber and under the platform to separate each of the wafers. 3. The wafer inspection device structure described in item 2 of the scope of patent application, wherein when the second light source is set under the platform, the platform is a light-transmissive material. 4. The structure of the wafer detection device as described in item 2 of the scope of the patent application, wherein the second light source is a cold light source of a cold cathode tube, a light emitting diode, or a fiber optic bow. 5. The structure of the wafer inspection device as described in item 1 of the scope of the patent application, wherein the first light source is a cold cathode tube, a light emitting diode, or a fiber optic bow. 第10頁 M265760 五、申請專利範圍 冷光源 6 如申請專利範圍第1項所述之晶片檢測裝置結 中,該第一光源之調整角度為1〇度至8〇度。 〜’其 半 導體感應器其中之一者。 曰 、如申請專利範圍第1項所述之曰曰曰片檢^测襄置結構,其 ,該不良晶片數據係包栝系 < 日日 里及該晶圓上不良 7、如申請專利範圍第1項所述之晶片檢测裝置結構,其 中,該感光裝置係選自電荷耦合元件及互補式金屬氧化^ 中 區域 晶片之Page 10 M265760 V. Patent application scope Cold light source 6 According to the wafer inspection device described in item 1 of the patent application scope, the adjustment angle of the first light source is 10 degrees to 80 degrees. ~ ’One of its semiconductor inductors. As described in item 1 of the scope of the patent application, the wafer inspection structure is described, and the defective wafer data is the data of the < day-to-day and on-wafer defective 7. The wafer inspection device structure according to item 1, wherein the photosensitive device is selected from the group consisting of a charge-coupled element and a complementary metal oxide wafer.
TW93215268U 2004-09-24 2004-09-24 Structure for wafer inspection apparatus TWM265760U (en)

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