TWM243778U - Clearance cleaning machine for overlapped chips - Google Patents
Clearance cleaning machine for overlapped chips Download PDFInfo
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- TWM243778U TWM243778U TW92215376U TW92215376U TWM243778U TW M243778 U TWM243778 U TW M243778U TW 92215376 U TW92215376 U TW 92215376U TW 92215376 U TW92215376 U TW 92215376U TW M243778 U TWM243778 U TW M243778U
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M243778 五、創作說明(1) <新型所屬之技術領域> 本創作係有關一種複晶片縫隙清洗機設計,惟指一種 可針對複晶片之縫隙充分加以清洗並吹乾之複晶片縫隙清 洗機結構設計。 <先前技術> 按,習見的晶片清洗機(w a f e r c 1 e a n e r )係具有多 種不同原理及設備型式,例如乾式清洗機、濕式清洗機、 封密式容器洗淨機或高壓化學容器清洗設備等,其清洗晶 片之原理、方式及機器型態,均有若大的差異。而最常見 的為一般所稱之濕式清洗機,此種機器模組通常包括有: 中央控制系統及晶圓輸入端、串聯式化學酸槽及洗濯槽、 機器手臂或輸送帶、偵測系統(包含流量偵測、溫度偵側 、酸槽化學濃度校準)及旋乾或風乾設備等。 惟,傳統的濕式清洗機,其結構規劃僅針對一般單晶 片之表面進行清洗,因此對於具有縫隙之複晶片,即無法 達成充分的清洗縫隙之效果,尤其是使用高水量、低壓力 之控制模組,並不能有效的進入縫隙中,故整體清洗效果 不彰。其次,傳統的濕式清洗機係使用旋乾或烘乾設備, 使液體脫離晶片,其中旋乾模式係屬被動式型態,必須批 次進行,因此造成作業程序經常暫停;而烘乾模式,係於 晶片清洗後,再使用烘乾之設備予以烘乾,因此除了無法 烘乾複晶片之縫隙外,其烘燥速度緩慢,即須不時的暫停 作業程序,故影響其自動化應有之效率,且烘乾速度減緩 時,因無法迅速的將液體及雜質帶走,往往會在晶片表面M243778 V. Creative Instructions (1) < Technical Field of New Type > This creation is related to the design of a multi-wafer gap cleaning machine, but refers to a multi-wafer gap cleaning machine which can fully clean and blow dry the gap of the multi-wafer. Structural design. < Previous technology > According to the conventional wafer cleaning machine (waferc 1 eaner) has a variety of different principles and equipment types, such as dry cleaning machines, wet cleaning machines, sealed container cleaning machines or high pressure chemical container cleaning equipment And so on, the principle, method and machine type of wafer cleaning are all different. The most common type is the so-called wet cleaning machine. Such machine modules usually include: central control system and wafer input terminal, tandem chemical acid tank and washing tank, robot arm or conveyor belt, detection system (Including flow detection, temperature detection side, acid tank chemical concentration calibration) and spin-drying or air-drying equipment. However, the traditional wet cleaning machine has a structural plan that only cleans the surface of a general single wafer. Therefore, for complex wafers with gaps, the effect of cleaning the gaps cannot be achieved, especially using high water and low pressure control. The module cannot effectively enter the gap, so the overall cleaning effect is not good. Secondly, the traditional wet cleaning machine uses spin-drying or drying equipment to separate the liquid from the wafer. The spin-drying mode is a passive type and must be performed in batches, which often causes the operation process to be suspended. After the wafer is cleaned, the drying equipment is used to dry it. Therefore, in addition to being unable to dry the gaps between the wafers, the drying speed is slow, which means that the operation procedure must be suspended from time to time, which affects the efficiency of its automation. And when the drying speed is slowed down, liquids and impurities can't be taken away quickly, often on the wafer surface.
第5頁 M243778 五、創作說明(2) 殘留水痕及雜質,因而影響晶片到品質。 緣此,本案創作人乃以其設計、製造電子產業相關設 備之技術及經驗,提出一種複晶片縫隙清洗機設計,期藉 此改善上述之濕式清洗機之缺憾。 <新型内容> 本創作主要目的,乃在於提供一種複晶片縫隙清洗機 設計,惟係藉以清洗機構及行程之巧妙規劃、設置,以達 成適於清洗複晶片或單晶片之功能,惟特別具有複晶片縫 隙之清洗及高速吹乾效果,俾使自動化作業程序快速、順 暢,並充分的清洗及吹乾複晶片各部位者。 依上述目的,本創作主要係為於一機檯之網狀輸送帶 行程起始端,依序規劃有一清洗區、一風切區以及一吹乾 區,其中該清洗區係為複數個水刀及至少一個之液切清潔 機構所形成,並令其排列呈清洗複晶片表面及縫隙之形態 ,而風切區係為至少一個風切機構所構成,並令其設置為 吹乾複晶片縫隙之形態,藉此構築組成高壓、低量之複晶 片縫隙清洗機,以充分的清潔並迅速吹乾複晶片各部位。 本創作次一目的,乃在於提供一種複晶片縫隙清洗機 設計,其中,該液切清潔機構及風切機構,係可為一中空 高壓筒於一側設有一縫隙所構成;亦可為中空高壓筒於一 側排列設有複數個管狀出口所構成,以提供高壓低量之清 洗及吹乾效果。 <實施方式> 為使 貴審查委員瞭解本創作之目的、特徵及功效,Page 5 M243778 V. Creative Instructions (2) Residual water marks and impurities, which affect the quality of the wafer. For this reason, the creator of this case, based on his technology and experience in designing and manufacturing related equipment for the electronics industry, proposed a multi-wafer gap cleaning machine design in order to improve the shortcomings of the above wet cleaning machine. < New content > The main purpose of this creation is to provide a design of a multi-wafer gap cleaning machine, but by clever planning and setting of the cleaning mechanism and stroke, to achieve functions suitable for cleaning multi-wafers or single wafers, but special It has the effect of cleaning and blow drying of the gap of the compound wafer, which can make the automatic operation procedure fast and smooth, and fully clean and blow dry all parts of the compound wafer. According to the above purpose, this creation is mainly at the beginning of the travel of the mesh conveyor belt of a machine, and a cleaning area, a wind-cut area, and a blow-drying area are planned in order. The cleaning area is a plurality of waterjets and At least one liquid-cut cleaning mechanism is formed and arranged to clean the surface and gaps of the multi-wafer, and the wind-cut area is composed of at least one air-cut mechanism and set to blow-dry the multi-wafer gap. In this way, a high-pressure, low-volume compound wafer gap cleaning machine is constructed to sufficiently clean and quickly dry all parts of the compound wafer. The purpose of this creation is to provide a multi-wafer gap cleaning machine design. The liquid cutting cleaning mechanism and air cutting mechanism can be a hollow high pressure cylinder with a gap on one side; it can also be a hollow high pressure. The tube is formed by a plurality of tubular outlets arranged on one side to provide high pressure and low volume cleaning and drying effects. < Embodiment > In order for your review committee to understand the purpose, features, and effects of this creation,
第6頁 M243778 五、創作說明(3) 茲藉由下述具體之實施例,並配合所附之圖式,對本創作 做一詳細說明,說明如后: 如第一圖所示,本創作所為之『複晶片縫隙清洗機』 設計,該缝隙清洗機係包含一機檯1 、一輸送設備2及其 他控制系統及裝置等所組成,其中: 機檯1 ,(參考第一圖所示)其係提供設置輸送設備 2於上面之結構座體,並於選定處設有中央控制系統、化 學槽、洗濯槽、偵測系統等裝置設備,惟機檯1之結構形 態及所屬設備係為習知技術原理之應用,故不另贅; 輸送設備2 ,(參考第一圖所示)係設置於所述機檯 1上用以輸送複晶片之裝置,乃包括一上輸送帶2 1及一 下輸送帶22所構成,其中該上、下輸送帶21 、22係 為網狀環帶,並以複數個滾輪2 3撐持成形者,且利用其 中選定之滾輪2 3與驅動設備連結,藉此構成可於該上、 下輸送帶2 1 、2 2間夾持複晶片輸送之結構功能; 惟本創作主要係選定於輸送設備2行程起始,依序規 劃有一清洗區3 、一風切區4及一吹乾區5 ,藉此組成複 晶片縫隙清洗機,以進一步達成複晶片縫隙之清洗及高速 吹乾效果,並獲致自動化作業程序快速、順暢,且充分的 清洗及吹乾複晶片各部位之效益,其中: 一清洗區3 ,(如第一圖所示)係複數個裝設於輸送 設備2行程起段而可喷射液體之水刀3 1及至少一個之液 切清潔機構3 2所組成,俾用以高壓喷射特定液體或純水 而清洗複晶片者;該液切清潔機構3 2可為一種中空高壓Page 6 M243778 V. Creation Instructions (3) The following specific examples and the accompanying drawings are used to explain this creation in detail, as explained below: As shown in the first figure, this creation is "Multi-wafer gap cleaning machine" design, the gap cleaning machine is composed of a machine 1, a conveying equipment 2 and other control systems and devices, among which: machine 1 (refer to the first picture) It is provided with a structure base on which the conveying equipment 2 is arranged, and a central control system, a chemical tank, a washing tank, a detection system and the like are provided at the selected place. However, the structure and equipment of the machine 1 are conventional. The application of technical principles is not redundant; the conveying equipment 2 (refer to the first figure) is a device for conveying multiple wafers on the machine 1 and includes an upper conveying belt 21 and a lower conveying device. The belt 22 is formed, wherein the upper and lower conveyor belts 21 and 22 are mesh-shaped endless belts, and the shaper is supported by a plurality of rollers 23, and the selected rollers 23 are connected to the driving equipment, thereby constituting On the upper and lower conveyor belt 2 1 The structure and function of the conveyance of 2 clamped multiple wafers; however, this creation is mainly selected at the beginning of the 2 stroke of the conveying equipment, and a cleaning zone 3, a wind cutting zone 4 and a blow drying zone 5 are planned in order to form a complex Wafer gap cleaning machine, to further achieve the effect of cleaning and drying the gaps of the multiple wafers, and obtain the fast, smooth, and fully automatic cleaning process of the various parts of the multiple wafers, including: a cleaning zone 3, ( (As shown in the first figure) is composed of a plurality of water jets 3 1 and at least one liquid cutting cleaning mechanism 3 2 installed at the beginning of the stroke of the conveying equipment 2 and used for high-pressure spraying of specific liquids or pure liquids. Those cleaning the wafers with water; the liquid-cut cleaning mechanism 32 may be a hollow high pressure
第7頁 M243778 五、創作說明(4) 筒於側邊設有一縫隙出口 3 1 1 (如第二圖所示),或中 空高壓筒於一側排列設有複數個管狀出口 3 1 2構成;藉 此,選用數個水刀3 1分別設置於該上、下輸送帶2 1 、 2 2間之選定處,使其對準複晶片輸送行程處;又,於所 述該上、下輸送帶2 1 、2 2行程側邊選定處,乃設有至 少一個液切清潔機構3 2 (如第四圖及第五圖所示),並 令其縫隙出口 3 1 1或管狀出口 3 1 2恰對準輸送行程中 之複晶片1 0縫隙位置;若此,並令數個水刀3 1及至少 一個液切清潔機構3 2與液體供應設備接通,即組成可同 步沖洗位於輸送設備2移動之複晶片其表面及縫隙之清洗 區3結構; 一風切區4 ,係設有可喷射風壓之風切機構4 1位於 輸送設備2行程中段側邊或其他適當處,俾利用高壓風速 吹乾複晶片縫隙之裝置,該風切機構4 1係相同於前述之 液切清潔機構3 2形態,(如第二圖及第三圖所示)可為 一中空高壓筒於側邊設有一縫隙出口 4 1 1或管狀出口 4 1 2所構成;藉此,選用至少一個液切機構4 1設置於上 或下輸送帶2 1 、2 2之行程側邊選定處(如第四圖及第 五圖所示),令其縫隙出口411或管狀出口412對準 輸送行程中之複晶片1 0縫隙位置,並與提供高風壓、低 風量之風壓設備相接通,即組成可吹乾位於輸送設備2移 動中複晶片其縫隙之風切區4結構; 一吹乾區5 ,乃設置於所述輸送設備2行程末段,用 以低壓高風量吹乾複晶片表面之裝置,其主要係選用數個Page 7 M243778 V. Creation instructions (4) The tube is provided with a slit outlet 3 1 1 (as shown in the second figure) on the side, or a hollow high-pressure tube is provided with a plurality of tubular outlets 3 1 2 arranged on one side; Therefore, a plurality of water jets 31 are selected and arranged at selected positions between the upper and lower conveyor belts 2 1 and 22, respectively, so that they are aligned with the multi-wafer conveying stroke; and on the upper and lower conveyor belts, 2 1 、 2 2 At the selected side of the stroke, there is at least one liquid cutting cleaning mechanism 3 2 (as shown in the fourth and fifth figures), and the gap exit 3 1 1 or the tubular exit 3 1 2 is exactly Align the gap position of the multiple wafers 10 during the conveying stroke; if so, connect several waterjets 31 and at least one liquid cutting cleaning mechanism 32 to the liquid supply equipment, which can be synchronized to be flushed and moved at the conveying equipment 2 The structure of the cleaning area 3 on the surface and the gap of the complex wafer; a wind cutting area 4, which is provided with a wind cutting mechanism capable of spraying wind pressure 41. It is located at the side of the middle of the stroke of the conveying equipment 2 or other appropriate places. Dry-recovering device for wafer gap, the air cutting mechanism 41 is the same as the liquid cutting cleaning Structure 3 2 (as shown in the second and third figures) can be a hollow high-pressure cylinder provided with a slit outlet 4 1 1 or a tubular outlet 4 1 2 on the side; thereby, at least one liquid cut is selected. The mechanism 41 is set at the selected side of the stroke of the upper or lower conveyor belt 2 1 and 2 2 (as shown in the fourth and fifth figures), so that the gap exit 411 or the tubular exit 412 is aligned with the rest of the conveying stroke. The chip 10 has a gap position, and is connected to the wind pressure equipment that provides high wind pressure and low air volume, that is, a wind cutting area 4 structure that can be dried and located in the gap of the wafer while the conveying device 2 is moving; It is a device set at the end of the 2 stroke of the conveying equipment to dry the surface of the complex wafer with low pressure and high air volume. It mainly uses several
M243778 五、創作說明(5) 出風管5 1分別設置於該上、下輸送帶2 1 、2 2間之選 定處,使其出風口對準複晶片輸送行程處,並與風壓設備 相接通所構成, 本創作藉以上述輸送設備2行程中,依序規劃有一清 洗區3 、一風切區4及一吹乾區5之結構及組合關係形態 設計,並設定所述之液體供應設備及風壓設備,形成高液 壓(風壓)、低液量(低風量)之清洗、吹乾模式,即組 成一種複晶片縫隙清洗機,以進一步達成複晶片縫隙之清 洗及高速吹乾效果。 其次,(如第六圖及第七圖所示)本創作用以高壓清 洗或吹乾複晶片1 0縫隙之液切清潔機構3 2及風切機構 4 1 ,亦可實施分別設置於輸送設備2上或下輸送帶2 1 、2 2兩側(故有兩個液切清潔機構或風切機構),使其 一側縫隙出口 3 1 1 、4 1 1或管狀出口 3 1 2 、4 1 2 對準輸送行程中之複晶片縫隙位置,藉此,增進複晶片縫 隙之高壓清洗及高壓吹乾效果;又,(如第八圖及第九圖 所示)該液切清潔機構3 2及風切機構4 1 ,亦可實施分 別設置於輸送設備2其上及下輸送帶2 1 、2 2兩側(故 一共有四個液切清潔機構或風切機構),使其一側縫隙出 口 3 1 1 、41 1或管狀出口 312 、412對準輸送行 程中之複晶片1 0縫隙位置,俾更加增進複晶片縫隙之高 壓清洗及高壓吹乾效果;由此可見,本創作所述對準複晶 片1 0缝隙之液切清潔機構3 2及風切機構4 1 ,並不限 制裝設於一側或二側,即使依實際需求,亦可選擇性的設M243778 V. Creation instructions (5) The air duct 51 is set at the selected place between the upper and lower conveyor belts 2 1 and 22, respectively, so that its air outlet is aligned with the multi-wafer conveying stroke and is related to the wind pressure equipment. The connection is constituted. Based on the above-mentioned conveying equipment 2, it is planned that the structure and the combination relationship design of a cleaning area 3, a wind cutting area 4 and a blow drying area 5 are sequentially planned, and the liquid supply equipment and The wind pressure equipment forms a high-hydraulic (wind pressure), low-liquid (low-air volume) cleaning and blow drying mode, that is, a multi-wafer gap cleaning machine is formed to further achieve the multi-wafer gap cleaning and high-speed blow drying effects. Secondly, (as shown in Figures 6 and 7), the liquid cutting cleaning mechanism 3 2 and air cutting mechanism 4 1 used for high pressure cleaning or drying of the gap 10 of the wafer can be implemented separately in the conveying equipment. 2 Both sides of the upper or lower conveyor belt 2 1, 2 2 (so there are two liquid cutting cleaning mechanisms or air cutting mechanisms), so that one side of the gap exit 3 1 1, 4 1 1 or tubular exit 3 1 2, 4 1 2 Align the position of the wafer gap during the conveying stroke to improve the high-pressure cleaning and high-pressure blow drying effect of the wafer gap; and (as shown in Figures 8 and 9) the liquid cutting cleaning mechanism 3 2 and The wind cutting mechanism 4 1 can also be provided on both sides of the upper and lower conveyor belts 2 1, 2 2 of the conveying equipment 2 (so there are a total of four liquid cutting cleaning mechanisms or air cutting mechanisms), so that there is a slit exit on one side 3 1 1, 41 1 or tubular outlets 312, 412 are aligned with the position of the gap 10 of the multiple wafer in the conveying stroke, which further enhances the high-pressure cleaning and high-pressure blow-drying effect of the multiple wafer gap; thus, the alignment described in this creation Liquid cutting cleaning mechanism 3 2 and air cutting mechanism 4 1 with a gap of 10 wafers are not limited to installation One or two sides, even according to the actual needs, also selectively provided
M243778 五、創作說明(6) 置為縫隙出 方向,相同 洗及吹乾功 一圖 移動 3 1 洗模 有充 複晶 南風 以吹 管5 面力口 計, 及雜 迅速 送帶 運用本 所示) 時,係 及至少 式,即 分清洗 片輸送 壓、低 出;又 1之低 以吹乾 即能充 質之殘 的吹乾 之缺點 π 3 1 於或逆 能。 創作複 當複晶 可先經 一個之 可同步 該複晶 至風切 風量之 當複晶 風壓、 ;是以 分的將 留,以 複晶片 ,以使 1、411 或管狀出口 312、412 於輸送設備2之方向,而同具有上述清 晶片 片依 過所 液切 針對 片各 區4 吹乾 片輸 南風 ,藉 清洗 維護 各部 本創 縫隙 序被 述之 清潔 複晶 部位 ,即 模式 送至 量吹 該風 液吹 複晶 位, 作獲 清洗機 上及下 清洗區 機構3 片表面 ,以及 能自動 ,針對 最後的 乾模式 切區4 離,除 片品質 故避免 致完全 之設 輸送 3, 2之 及縫 節約 控制 複晶 吹乾 ,再 配合 了能 外, 習見 無需 計, 帶2 利用 高水 隙進 用水 風切 片其 區5 針對 吹乾 有效 亦可 烘乾 暫停 (請 1、 其複 壓、 行清 之效 機構 缝隙 ,則 複晶 區5 避免 因高 程序 之自 再參 2 2 數個 低水 洗, 果; 4 1 之殘 係以 片其 之規 習見 風壓 須暫 動化 考第 夾持 水刀 量清 故具 而當 使用 水加 出風 它表 劃設 水痕 模式 停輸 效益 綜上所述,本創作所為之『複晶片縫隙清洗機』結構 設計,已確具實用性與創作性,其手段之運用亦出於新穎 無疑,且功效與設計目的誠然符合,已稱合理進步至明。 為此,依法提出新型專利申請,惟懇請 鈞局惠予詳審, 並賜准專利為禱,至感德便。M243778 V. Creation instructions (6) Set the direction of the gap, the same washing and blow drying work, a picture moves 3 1 The mold washing is filled with compound crystals, the south wind is blown by a 5-face force meter, and the miscellaneous materials are quickly sent to the application. ), It is at least the formula, that is, the conveying pressure of the cleaning tablets is lowered, and the low of 1 is that the dryness that can be filled with the remaining dryness can be π 3 1 or reverse energy. The creation of a compound crystal can first pass a compound crystal wind pressure that can synchronize the compound crystal to the wind-cut air volume; the minute will be left to compound the wafer so that 1,411 or the tubular outlets 312,412 are in The direction of the conveying device 2 is the same as that with the above-mentioned clear wafers. According to the liquid cutting, the wafers are blown dry and transported to the south wind. By cleaning and maintaining the cleaned polycrystalline parts described in the original gap sequence, the pattern is sent to Measure the wind and blow the compound crystal position to obtain 3 pieces of surface on the upper and lower washing area of the washing machine, and can automatically cut off the final dry-mode cutting area 4 away. In addition to the quality of the piece, avoid the complete set of conveying 3, 2 and the seam saving control complex crystal blow-drying, combined with the extra energy, no need to count in practice, with 2 using high water gap to enter the water wind to slice its area 5 effective for blow-drying can also be drying pause (please 1, its re-pressurization If the mechanism gap is clear, the compound area 5 can avoid re-referring due to high procedures. 2 2 Several low-water washing results. The residue of 4 1 is based on the rules. See the wind pressure must be temporarily changed. Hold The water knife is clear and clear, and when water is used to add air, the water mark mode is set to stop the loss. To sum up, the structural design of the "multi-wafer gap cleaning machine" for this creation has been practical and creative. The use of its means is also novel and undoubted, and the efficacy and design purpose are indeed in line with it. It has been said that reasonable progress has been made. To this end, a new patent application has been submitted in accordance with the law. To the sense of virtue.
第10頁 )t) ίι) ' ) / M243778 圖式簡單說明 第一圖為本創作總體組成狀態之示意圖。 第二圖為本創作設有縫隙出口之液切清潔機構及風切機構 之實施例立體圖。 第三圖為本創作設有管狀出口之液切清潔機構及風切機構 之另一實施例立體圖。 第四圖為本創作設有至少一液切清潔機構或風切機構之實 施例斷面圖。 第五圖為本創作設有至少一液切清潔機構或風切機構之實 施例局部俯視圖。 第六圖為本創作設有二個液切清潔機構或風切機構之實施 例斷面圖。 第七圖為本創作設有二個液切清潔機構或風切機構之實施 例局部俯視圖。 第八圖為本創作設有四個液切清潔機構或風切機構之實施 例斷面圖。 第九圖為本創作設有四個液切清潔機構或風切機構之實施 例局部俯視圖。 <圖號簡單說明> 1———— —— ·斗幾 楼 > 2———— • β · 送 設 備 2 1··· • · · Jl 送 帶 2 2··· 於 送 帶 2 3··· 輪 , 3 · · · · • · •、凊 洗 區 9Page 10) t) ίι '') / M243778 Schematic illustration The first picture is a schematic diagram of the overall composition of the creation. The second figure is a perspective view of the embodiment of the liquid-cutting cleaning mechanism and the wind-cutting mechanism provided with a slot outlet. The third figure is a perspective view of another embodiment of a liquid-cutting cleaning mechanism and a wind-cutting mechanism provided with a tubular outlet. The fourth figure is a sectional view of an embodiment in which at least one liquid-cut cleaning mechanism or air-cut mechanism is provided. The fifth figure is a partial plan view of an embodiment in which at least one liquid-cut cleaning mechanism or air-cut mechanism is provided. The sixth figure is a cross-sectional view of an embodiment in which two liquid-cutting cleaning mechanisms or air-cutting mechanisms are provided in the creation. The seventh figure is a partial top view of an embodiment in which two liquid-cutting cleaning mechanisms or air-cutting mechanisms are provided in the creation. The eighth figure is a cross-sectional view of an embodiment in which four liquid-cutting cleaning mechanisms or air-cutting mechanisms are provided. The ninth figure is a partial plan view of an embodiment in which four liquid-cutting cleaning mechanisms or air-cutting mechanisms are provided. < Simplified description of drawing number > 1 ———— —— · Doujilou > 2 ———— • β · Feeding device 2 1 ··· • · · Jl feed 2 2 ··· 2 3 ··· Wheels, 3 ··· · • · • • Washing area 9
第11頁 M243778 圖式簡單說明Page 11 M243778 Schematic description
3 12 4 · · 4 1 · 4 11 4 123 12 4 · 4 1 · 4 11 4 12
水刀 液切清潔機構, 縫隙出口; 管狀出口; 風切區, 風切機構; 縫隙出口; 管狀出口; 吹乾區; 出風管; 複晶片;Waterjet Liquid-cut cleaning mechanism, slit exit; tubular exit; wind-cut zone, air-cut mechanism; slit exit; tubular exit; blow-drying zone; air duct; compound wafer;
第12頁Page 12
Claims (1)
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TW92215376U TWM243778U (en) | 2003-08-25 | 2003-08-25 | Clearance cleaning machine for overlapped chips |
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TW92215376U TWM243778U (en) | 2003-08-25 | 2003-08-25 | Clearance cleaning machine for overlapped chips |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8685203B2 (en) | 2006-07-31 | 2014-04-01 | Semens Co., Ltd. | Dry etcher including etching device and cleaning device |
CN110302997A (en) * | 2019-05-29 | 2019-10-08 | 无锡鼎亚电子材料有限公司 | One kind cutting dryer by formula pure water high pressure cleaning showers wind |
-
2003
- 2003-08-25 TW TW92215376U patent/TWM243778U/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8685203B2 (en) | 2006-07-31 | 2014-04-01 | Semens Co., Ltd. | Dry etcher including etching device and cleaning device |
CN110302997A (en) * | 2019-05-29 | 2019-10-08 | 无锡鼎亚电子材料有限公司 | One kind cutting dryer by formula pure water high pressure cleaning showers wind |
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