TWI912618B - 檢測裝置、微影蝕刻設備及物品製造方法 - Google Patents

檢測裝置、微影蝕刻設備及物品製造方法

Info

Publication number
TWI912618B
TWI912618B TW112125384A TW112125384A TWI912618B TW I912618 B TWI912618 B TW I912618B TW 112125384 A TW112125384 A TW 112125384A TW 112125384 A TW112125384 A TW 112125384A TW I912618 B TWI912618 B TW I912618B
Authority
TW
Taiwan
Prior art keywords
light
mark
detection system
substrate
illumination
Prior art date
Application number
TW112125384A
Other languages
English (en)
Chinese (zh)
Other versions
TW202411769A (zh
Inventor
岩井俊樹
藤田雄一
戸田竣
吽野靖行
Original Assignee
日商佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商佳能股份有限公司 filed Critical 日商佳能股份有限公司
Publication of TW202411769A publication Critical patent/TW202411769A/zh
Application granted granted Critical
Publication of TWI912618B publication Critical patent/TWI912618B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW112125384A 2022-07-21 2023-07-07 檢測裝置、微影蝕刻設備及物品製造方法 TWI912618B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-116574 2022-07-21
JP2022116574A JP2024014030A (ja) 2022-07-21 2022-07-21 検出装置、リソグラフィー装置および物品製造方法

Publications (2)

Publication Number Publication Date
TW202411769A TW202411769A (zh) 2024-03-16
TWI912618B true TWI912618B (zh) 2026-01-21

Family

ID=89577325

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112125384A TWI912618B (zh) 2022-07-21 2023-07-07 檢測裝置、微影蝕刻設備及物品製造方法

Country Status (4)

Country Link
US (1) US20240027921A1 (https=)
JP (1) JP2024014030A (https=)
KR (1) KR20240013060A (https=)
TW (1) TWI912618B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024014031A (ja) * 2022-07-21 2024-02-01 キヤノン株式会社 検出装置、リソグラフィー装置および物品製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI654422B (zh) * 2016-04-25 2019-03-21 日商佳能股份有限公司 測量裝置、壓印設備、製造產品的方法、光量確定方法及光量調整方法
TW201916999A (zh) * 2017-05-25 2019-05-01 美商麥吉克利普公司 雙面壓印
US20210372776A1 (en) * 2020-06-02 2021-12-02 Canon Kabushiki Kaisha Detector, imprint apparatus, and method of manufacturing article

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Publication number Priority date Publication date Assignee Title
JP2003092246A (ja) * 2001-09-17 2003-03-28 Canon Inc アライメントマーク及びアライメント装置とその方法、及び露光装置、デバイスの製造方法
JP2006023221A (ja) * 2004-07-09 2006-01-26 Tokyo Seimitsu Co Ltd 外観検査装置及び投影方法
US8842294B2 (en) * 2011-06-21 2014-09-23 Canon Kabushiki Kaisha Position detection apparatus, imprint apparatus, and position detection method
JP5706861B2 (ja) * 2011-10-21 2015-04-22 キヤノン株式会社 検出器、検出方法、インプリント装置及び物品製造方法
IL304744B2 (en) * 2017-11-07 2024-09-01 Asml Netherlands Bv Metrology system and method for determining a characteristic of an area of interest
JP7500258B2 (ja) * 2020-04-10 2024-06-17 キヤノン株式会社 検出装置、リソグラフィ装置、物品の製造方法、及び検出方法
US11604149B2 (en) * 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
US11346657B2 (en) * 2020-05-22 2022-05-31 Kla Corporation Measurement modes for overlay

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI654422B (zh) * 2016-04-25 2019-03-21 日商佳能股份有限公司 測量裝置、壓印設備、製造產品的方法、光量確定方法及光量調整方法
TW201916999A (zh) * 2017-05-25 2019-05-01 美商麥吉克利普公司 雙面壓印
US20210372776A1 (en) * 2020-06-02 2021-12-02 Canon Kabushiki Kaisha Detector, imprint apparatus, and method of manufacturing article

Also Published As

Publication number Publication date
TW202411769A (zh) 2024-03-16
US20240027921A1 (en) 2024-01-25
KR20240013060A (ko) 2024-01-30
JP2024014030A (ja) 2024-02-01

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