TWI912280B - 研磨組成物及其使用之方法 - Google Patents

研磨組成物及其使用之方法

Info

Publication number
TWI912280B
TWI912280B TW110105350A TW110105350A TWI912280B TW I912280 B TWI912280 B TW I912280B TW 110105350 A TW110105350 A TW 110105350A TW 110105350 A TW110105350 A TW 110105350A TW I912280 B TWI912280 B TW I912280B
Authority
TW
Taiwan
Prior art keywords
acid
composition
weight
amount
ammonium
Prior art date
Application number
TW110105350A
Other languages
English (en)
Chinese (zh)
Other versions
TW202138502A (zh
Inventor
黃亭凱
大爲 林
斌 胡
立清 温
燕南 梁
Original Assignee
美商富士軟片電子材料美國股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商富士軟片電子材料美國股份有限公司 filed Critical 美商富士軟片電子材料美國股份有限公司
Publication of TW202138502A publication Critical patent/TW202138502A/zh
Application granted granted Critical
Publication of TWI912280B publication Critical patent/TWI912280B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW110105350A 2020-02-13 2021-02-17 研磨組成物及其使用之方法 TWI912280B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062975829P 2020-02-13 2020-02-13
US62/975,829 2020-02-13

Publications (2)

Publication Number Publication Date
TW202138502A TW202138502A (zh) 2021-10-16
TWI912280B true TWI912280B (zh) 2026-01-21

Family

ID=77273440

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110105350A TWI912280B (zh) 2020-02-13 2021-02-17 研磨組成物及其使用之方法

Country Status (7)

Country Link
US (2) US12371589B2 (https=)
EP (1) EP4103662A4 (https=)
JP (2) JP7715720B2 (https=)
KR (1) KR20220137754A (https=)
CN (1) CN114945648B (https=)
TW (1) TWI912280B (https=)
WO (1) WO2021162978A1 (https=)

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* Cited by examiner, † Cited by third party
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US11508585B2 (en) * 2020-06-15 2022-11-22 Taiwan Semiconductor Manufacturing Company Ltd. Methods for chemical mechanical polishing and forming interconnect structure
TWI880128B (zh) * 2020-07-20 2025-04-11 美商Ｃｍｃ材料有限責任公司 矽晶圓拋光組合物及方法
JP2024529032A (ja) * 2021-08-05 2024-08-01 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 組成物及びその使用方法
US11820919B2 (en) * 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation
WO2023076112A1 (en) * 2021-10-28 2023-05-04 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
WO2023192248A1 (en) * 2022-03-31 2023-10-05 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
EP4562104A4 (en) * 2022-07-26 2025-11-19 Fujifilm Electronic Mat Usa Inc COMPOSITIONS AND THEIR METHODS OF USE
TW202428806A (zh) * 2022-11-29 2024-07-16 美商富士軟片電子材料美國股份有限公司 拋光組成物及其使用方法
WO2024173029A1 (en) * 2023-02-17 2024-08-22 Versum Materials Us, Llc Chemical mechanical planarization for shallow trench isolation
CN120041101B (zh) * 2025-02-20 2025-09-23 中国矿业大学(北京) 一种用于芯片高k介质金属栅钌栅平坦化的抛光液及其制备方法与应用

Citations (5)

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TW200833826A (en) * 2006-11-02 2008-08-16 Cabot Microelectronics Corp CMP of copper/ruthenium/tantalum substrates
US20100096584A1 (en) * 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
TW201506099A (zh) * 2013-04-25 2015-02-16 日立化成股份有限公司 Ｃｍｐ用硏磨液及使用此硏磨液之硏磨方法（一）
TW201942275A (zh) * 2018-03-28 2019-11-01 美商富士軟片平面解決方案有限責任公司 障壁釕之化學機械研磨漿料
TW202014487A (zh) * 2018-09-28 2020-04-16 美商慧盛材料美國責任有限公司 阻絕物漿移除速率改良

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US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US20080148649A1 (en) 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
CN102893376A (zh) 2010-06-01 2013-01-23 应用材料公司 铜晶圆研磨的化学平坦化
JP6050934B2 (ja) 2011-11-08 2016-12-21 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
US8545715B1 (en) 2012-10-09 2013-10-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method
SG11201502768UA (en) * 2012-11-02 2015-05-28 Fujimi Inc Polishing composition
JPWO2014175393A1 (ja) 2013-04-25 2017-02-23 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
US9735030B2 (en) * 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
US9481811B2 (en) * 2015-02-20 2016-11-01 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced edge roll-off
US11046869B2 (en) * 2015-09-09 2021-06-29 Showa Denko Materials Co., Ltd. Polishing liquid, polishing liquid set, and substrate polishing method
JP6978933B2 (ja) * 2017-12-27 2021-12-08 ニッタ・デュポン株式会社 研磨用組成物
JP6962247B2 (ja) 2018-03-14 2021-11-05 Jsr株式会社 半導体表面処理用組成物および半導体表面処理方法
EP3774647A4 (en) * 2018-03-28 2022-04-06 FUJIFILM Electronic Materials U.S.A, Inc. CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR RUTHENIUM MATERIALS
US10847410B2 (en) * 2018-09-13 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Ruthenium-containing semiconductor structure and method of manufacturing the same
KR102952447B1 (ko) 2019-09-24 2026-04-13 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 연마 조성물 및 이의 사용 방법
WO2021076352A1 (en) 2019-10-15 2021-04-22 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
EP4103663A4 (en) * 2020-02-13 2023-08-23 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
TW202138505A (zh) * 2020-03-31 2021-10-16 美商富士軟片電子材料美國股份有限公司 研磨組成物及其使用方法
WO2023076112A1 (en) * 2021-10-28 2023-05-04 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
WO2023192248A1 (en) * 2022-03-31 2023-10-05 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
TW202428806A (zh) 2022-11-29 2024-07-16 美商富士軟片電子材料美國股份有限公司 拋光組成物及其使用方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200833826A (en) * 2006-11-02 2008-08-16 Cabot Microelectronics Corp CMP of copper/ruthenium/tantalum substrates
US20100096584A1 (en) * 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
TW201506099A (zh) * 2013-04-25 2015-02-16 日立化成股份有限公司 Ｃｍｐ用硏磨液及使用此硏磨液之硏磨方法（一）
TW201942275A (zh) * 2018-03-28 2019-11-01 美商富士軟片平面解決方案有限責任公司 障壁釕之化學機械研磨漿料
TW202014487A (zh) * 2018-09-28 2020-04-16 美商慧盛材料美國責任有限公司 阻絕物漿移除速率改良

Also Published As

Publication number Publication date
US20250333622A1 (en) 2025-10-30
JP7715720B2 (ja) 2025-07-30
WO2021162978A1 (en) 2021-08-19
US20210253904A1 (en) 2021-08-19
JP2025143522A (ja) 2025-10-01
EP4103662A1 (en) 2022-12-21
JP2023514586A (ja) 2023-04-06
CN114945648A (zh) 2022-08-26
TW202138502A (zh) 2021-10-16
CN114945648B (zh) 2025-06-20
US12371589B2 (en) 2025-07-29
EP4103662A4 (en) 2023-08-16
KR20220137754A (ko) 2022-10-12

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