CN114945648B - 抛光组合物及其使用方法 - Google Patents

抛光组合物及其使用方法 Download PDF

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Publication number
CN114945648B
CN114945648B CN202180009070.1A CN202180009070A CN114945648B CN 114945648 B CN114945648 B CN 114945648B CN 202180009070 A CN202180009070 A CN 202180009070A CN 114945648 B CN114945648 B CN 114945648B
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China
Prior art keywords
acid
composition
amount
removal rate
hydroxide
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CN202180009070.1A
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English (en)
Chinese (zh)
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CN114945648A (zh
Inventor
黄亭凯
林大为
胡斌
温立清
梁燕南
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Fujifilm Electronic Materials USA Inc
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Fujifilm Electronic Materials USA Inc
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Publication of CN114945648A publication Critical patent/CN114945648A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN202180009070.1A 2020-02-13 2021-02-08 抛光组合物及其使用方法 Active CN114945648B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062975829P 2020-02-13 2020-02-13
US62/975,829 2020-02-13
PCT/US2021/017049 WO2021162978A1 (en) 2020-02-13 2021-02-08 Polishing compositions and methods of use thereof

Publications (2)

Publication Number Publication Date
CN114945648A CN114945648A (zh) 2022-08-26
CN114945648B true CN114945648B (zh) 2025-06-20

Family

ID=77273440

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180009070.1A Active CN114945648B (zh) 2020-02-13 2021-02-08 抛光组合物及其使用方法

Country Status (7)

Country Link
US (2) US12371589B2 (https=)
EP (1) EP4103662A4 (https=)
JP (2) JP7715720B2 (https=)
KR (1) KR20220137754A (https=)
CN (1) CN114945648B (https=)
TW (1) TWI912280B (https=)
WO (1) WO2021162978A1 (https=)

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US11508585B2 (en) * 2020-06-15 2022-11-22 Taiwan Semiconductor Manufacturing Company Ltd. Methods for chemical mechanical polishing and forming interconnect structure
TWI880128B (zh) * 2020-07-20 2025-04-11 美商Ｃｍｃ材料有限責任公司 矽晶圓拋光組合物及方法
JP2024529032A (ja) * 2021-08-05 2024-08-01 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 組成物及びその使用方法
US11820919B2 (en) * 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation
WO2023076112A1 (en) * 2021-10-28 2023-05-04 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
WO2023192248A1 (en) * 2022-03-31 2023-10-05 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
EP4562104A4 (en) * 2022-07-26 2025-11-19 Fujifilm Electronic Mat Usa Inc COMPOSITIONS AND THEIR METHODS OF USE
TW202428806A (zh) * 2022-11-29 2024-07-16 美商富士軟片電子材料美國股份有限公司 拋光組成物及其使用方法
WO2024173029A1 (en) * 2023-02-17 2024-08-22 Versum Materials Us, Llc Chemical mechanical planarization for shallow trench isolation
CN120041101B (zh) * 2025-02-20 2025-09-23 中国矿业大学(北京) 一种用于芯片高k介质金属栅钌栅平坦化的抛光液及其制备方法与应用

Citations (1)

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CN101535442A (zh) * 2006-11-02 2009-09-16 卡伯特微电子公司 铜/钌/钽基材的化学机械抛光

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US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US20080148649A1 (en) 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
US20100096584A1 (en) 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
CN102893376A (zh) 2010-06-01 2013-01-23 应用材料公司 铜晶圆研磨的化学平坦化
JP6050934B2 (ja) 2011-11-08 2016-12-21 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
US8545715B1 (en) 2012-10-09 2013-10-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method
SG11201502768UA (en) * 2012-11-02 2015-05-28 Fujimi Inc Polishing composition
JPWO2014175393A1 (ja) 2013-04-25 2017-02-23 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
US20160086819A1 (en) 2013-04-25 2016-03-24 Hitachi Chemical Company, Ltd. Cmp polishing solution and polishing method using same
US9735030B2 (en) * 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
US9481811B2 (en) * 2015-02-20 2016-11-01 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced edge roll-off
US11046869B2 (en) * 2015-09-09 2021-06-29 Showa Denko Materials Co., Ltd. Polishing liquid, polishing liquid set, and substrate polishing method
JP6978933B2 (ja) * 2017-12-27 2021-12-08 ニッタ・デュポン株式会社 研磨用組成物
JP6962247B2 (ja) 2018-03-14 2021-11-05 Jsr株式会社 半導体表面処理用組成物および半導体表面処理方法
EP3774647A4 (en) * 2018-03-28 2022-04-06 FUJIFILM Electronic Materials U.S.A, Inc. CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR RUTHENIUM MATERIALS
EP3775076A4 (en) * 2018-03-28 2021-12-22 FUJIFILM Electronic Materials U.S.A, Inc. CHEMICAL-MECHANICAL BARRIER POLISHING MUD FOR RUTHENIUM
US10847410B2 (en) * 2018-09-13 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Ruthenium-containing semiconductor structure and method of manufacturing the same
US20200102476A1 (en) * 2018-09-28 2020-04-02 Versum Materials Us, Llc Barrier Slurry Removal Rate Improvement
KR102952447B1 (ko) 2019-09-24 2026-04-13 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 연마 조성물 및 이의 사용 방법
WO2021076352A1 (en) 2019-10-15 2021-04-22 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
EP4103663A4 (en) * 2020-02-13 2023-08-23 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
TW202138505A (zh) * 2020-03-31 2021-10-16 美商富士軟片電子材料美國股份有限公司 研磨組成物及其使用方法
WO2023076112A1 (en) * 2021-10-28 2023-05-04 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
WO2023192248A1 (en) * 2022-03-31 2023-10-05 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
TW202428806A (zh) 2022-11-29 2024-07-16 美商富士軟片電子材料美國股份有限公司 拋光組成物及其使用方法

Patent Citations (1)

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CN101535442A (zh) * 2006-11-02 2009-09-16 卡伯特微电子公司 铜/钌/钽基材的化学机械抛光

Also Published As

Publication number Publication date
US20250333622A1 (en) 2025-10-30
JP7715720B2 (ja) 2025-07-30
WO2021162978A1 (en) 2021-08-19
US20210253904A1 (en) 2021-08-19
JP2025143522A (ja) 2025-10-01
EP4103662A1 (en) 2022-12-21
JP2023514586A (ja) 2023-04-06
CN114945648A (zh) 2022-08-26
TW202138502A (zh) 2021-10-16
TWI912280B (zh) 2026-01-21
US12371589B2 (en) 2025-07-29
EP4103662A4 (en) 2023-08-16
KR20220137754A (ko) 2022-10-12

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