TWI911279B - 感放射線性樹脂組成物及圖案形成方法 - Google Patents

感放射線性樹脂組成物及圖案形成方法

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Publication number
TWI911279B
TWI911279B TW110134682A TW110134682A TWI911279B TW I911279 B TWI911279 B TW I911279B TW 110134682 A TW110134682 A TW 110134682A TW 110134682 A TW110134682 A TW 110134682A TW I911279 B TWI911279 B TW I911279B
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TW
Taiwan
Prior art keywords
radiosensitive
acid
group
carbon atoms
resin
Prior art date
Application number
TW110134682A
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English (en)
Chinese (zh)
Other versions
TW202219633A (zh
Inventor
丸山研
Original Assignee
日商Ｊｓｒ股份有限公司
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Publication of TW202219633A publication Critical patent/TW202219633A/zh
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW110134682A 2020-11-12 2021-09-16 感放射線性樹脂組成物及圖案形成方法 TWI911279B (zh)

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US20230384677A1 (en) * 2022-05-24 2023-11-30 Shin-Etsu Chemical Co., Ltd. Onium salt compound, polymer, resist composition, and patterning process
KR20250152562A (ko) * 2023-02-22 2025-10-23 제이에스알 가부시키가이샤 감방사선성 조성물 및 패턴 형성 방법

Citations (3)

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Publication number Priority date Publication date Assignee Title
TW201719287A (zh) * 2015-09-10 2017-06-01 Jsr Corp 化學增幅型抗蝕劑材料及抗蝕劑圖案的形成方法
TW202019862A (zh) * 2018-09-28 2020-06-01 日商信越化學工業股份有限公司 鎓鹽、光阻組成物及圖案形成方法
TW202033577A (zh) * 2019-01-08 2020-09-16 日商信越化學工業股份有限公司 光阻組成物及圖案形成方法

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Publication number Priority date Publication date Assignee Title
JP5856991B2 (ja) 2012-05-21 2016-02-10 富士フイルム株式会社 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法
JP5803872B2 (ja) * 2012-10-17 2015-11-04 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
JP7079591B2 (ja) * 2016-12-14 2022-06-02 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP7183757B2 (ja) * 2017-12-22 2022-12-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US11820735B2 (en) * 2018-04-12 2023-11-21 Sumitomo Chemical Company, Limited Salt, acid generator, resist composition and method for producing resist pattern
JP7111047B2 (ja) * 2019-04-05 2022-08-02 信越化学工業株式会社 スルホニウム化合物、化学増幅レジスト組成物、及びパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201719287A (zh) * 2015-09-10 2017-06-01 Jsr Corp 化學增幅型抗蝕劑材料及抗蝕劑圖案的形成方法
TW202019862A (zh) * 2018-09-28 2020-06-01 日商信越化學工業股份有限公司 鎓鹽、光阻組成物及圖案形成方法
TW202033577A (zh) * 2019-01-08 2020-09-16 日商信越化學工業股份有限公司 光阻組成物及圖案形成方法

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