KR102891971B1 - 감방사선성 수지 조성물 및 패턴 형성 방법 - Google Patents

감방사선성 수지 조성물 및 패턴 형성 방법

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Publication number
KR102891971B1
KR102891971B1 KR1020237006239A KR20237006239A KR102891971B1 KR 102891971 B1 KR102891971 B1 KR 102891971B1 KR 1020237006239 A KR1020237006239 A KR 1020237006239A KR 20237006239 A KR20237006239 A KR 20237006239A KR 102891971 B1 KR102891971 B1 KR 102891971B1
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group
radiation
carbon atoms
acid
sensitive
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Korean (ko)
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KR20230098776A (ko
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겐 마루야마
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제이에스알 가부시키가이샤
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01Sulfonic acids
    • C07C309/02Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/12Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
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    • C08F220/16Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/16Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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    • C08F220/283Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020237006239A 2020-11-12 2021-08-17 감방사선성 수지 조성물 및 패턴 형성 방법 Active KR102891971B1 (ko)

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JP2020188515 2020-11-12
JPJP-P-2020-188515 2020-11-12
JPJP-P-2021-020781 2021-02-12
JP2021020781 2021-02-12
PCT/JP2021/029984 WO2022102190A1 (ja) 2020-11-12 2021-08-17 感放射線性樹脂組成物及びパターン形成方法

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KR20230098776A KR20230098776A (ko) 2023-07-04
KR102891971B1 true KR102891971B1 (ko) 2025-12-01

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US (1) US20230273519A1 (https=)
JP (1) JPWO2022102190A1 (https=)
KR (1) KR102891971B1 (https=)
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WO (1) WO2022102190A1 (https=)

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Publication number Priority date Publication date Assignee Title
US20230384677A1 (en) * 2022-05-24 2023-11-30 Shin-Etsu Chemical Co., Ltd. Onium salt compound, polymer, resist composition, and patterning process
KR20250152562A (ko) * 2023-02-22 2025-10-23 제이에스알 가부시키가이샤 감방사선성 조성물 및 패턴 형성 방법

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2014081502A (ja) * 2012-10-17 2014-05-08 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びこれを用いたパターン形成方法
JP2019112395A (ja) * 2017-12-22 2019-07-11 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2020112784A (ja) * 2019-01-08 2020-07-27 信越化学工業株式会社 レジスト組成物、及びパターン形成方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5856991B2 (ja) 2012-05-21 2016-02-10 富士フイルム株式会社 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法
JP6507958B2 (ja) * 2015-09-10 2019-05-08 Jsr株式会社 化学増幅型レジスト材料及びレジストパターン形成方法
JP7079591B2 (ja) * 2016-12-14 2022-06-02 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
US11820735B2 (en) * 2018-04-12 2023-11-21 Sumitomo Chemical Company, Limited Salt, acid generator, resist composition and method for producing resist pattern
JP7205419B2 (ja) * 2018-09-28 2023-01-17 信越化学工業株式会社 オニウム塩、レジスト組成物及びパターン形成方法
JP7111047B2 (ja) * 2019-04-05 2022-08-02 信越化学工業株式会社 スルホニウム化合物、化学増幅レジスト組成物、及びパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014081502A (ja) * 2012-10-17 2014-05-08 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びこれを用いたパターン形成方法
JP2019112395A (ja) * 2017-12-22 2019-07-11 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2020112784A (ja) * 2019-01-08 2020-07-27 信越化学工業株式会社 レジスト組成物、及びパターン形成方法

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