TWI909059B - 遮罩基底、反射型遮罩及半導體元件之製造方法 - Google Patents

遮罩基底、反射型遮罩及半導體元件之製造方法

Info

Publication number
TWI909059B
TWI909059B TW111121191A TW111121191A TWI909059B TW I909059 B TWI909059 B TW I909059B TW 111121191 A TW111121191 A TW 111121191A TW 111121191 A TW111121191 A TW 111121191A TW I909059 B TWI909059 B TW I909059B
Authority
TW
Taiwan
Prior art keywords
film
mask
substrate
thin film
molybdenum
Prior art date
Application number
TW111121191A
Other languages
English (en)
Chinese (zh)
Other versions
TW202248741A (zh
Inventor
大野拓郎
池邊洋平
Original Assignee
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202248741A publication Critical patent/TW202248741A/zh
Application granted granted Critical
Publication of TWI909059B publication Critical patent/TWI909059B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
TW111121191A 2021-06-10 2022-06-08 遮罩基底、反射型遮罩及半導體元件之製造方法 TWI909059B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-097311 2021-06-10
JP2021097311A JP7699970B2 (ja) 2021-06-10 2021-06-10 マスクブランク、反射型マスク及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
TW202248741A TW202248741A (zh) 2022-12-16
TWI909059B true TWI909059B (zh) 2025-12-21

Family

ID=84424882

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111121191A TWI909059B (zh) 2021-06-10 2022-06-08 遮罩基底、反射型遮罩及半導體元件之製造方法

Country Status (5)

Country Link
US (1) US20240231216A1 (https=)
JP (1) JP7699970B2 (https=)
KR (1) KR20240018472A (https=)
TW (1) TWI909059B (https=)
WO (1) WO2022259915A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024089128A (ja) * 2022-12-21 2024-07-03 信越化学工業株式会社 反射型マスクブランク、反射型マスク及びその製造方法
KR20250111513A (ko) * 2024-01-15 2025-07-22 주식회사 에스앤에스텍 위상반전막 패턴이 반사패턴으로 사용되는 리버스 포토마스크 및 이를 제작하기 위한 블랭크마스크

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022109A (ja) * 1988-06-14 1990-01-08 Fujitsu Ltd Ｘ線マスク
JP2006228766A (ja) * 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP2018146945A (ja) * 2017-03-03 2018-09-20 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
WO2020235612A1 (ja) * 2019-05-21 2020-11-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2877190B2 (ja) * 1996-01-09 1999-03-31 日本電気株式会社 Ｘ線マスク及びその製造方法
JP3806702B2 (ja) 2002-04-11 2006-08-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022109A (ja) * 1988-06-14 1990-01-08 Fujitsu Ltd Ｘ線マスク
JP2006228766A (ja) * 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP2018146945A (ja) * 2017-03-03 2018-09-20 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
WO2020235612A1 (ja) * 2019-05-21 2020-11-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク

Also Published As

Publication number Publication date
JP2022188992A (ja) 2022-12-22
TW202248741A (zh) 2022-12-16
KR20240018472A (ko) 2024-02-13
WO2022259915A1 (ja) 2022-12-15
US20240231216A1 (en) 2024-07-11
JP7699970B2 (ja) 2025-06-30

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