KR20240018472A - 마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR20240018472A
KR20240018472A KR1020237042219A KR20237042219A KR20240018472A KR 20240018472 A KR20240018472 A KR 20240018472A KR 1020237042219 A KR1020237042219 A KR 1020237042219A KR 20237042219 A KR20237042219 A KR 20237042219A KR 20240018472 A KR20240018472 A KR 20240018472A
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KR
South Korea
Prior art keywords
film
thin film
mask
molybdenum
atomic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237042219A
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English (en)
Korean (ko)
Inventor
다꾸로 오노
요헤이 이께베
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20240018472A publication Critical patent/KR20240018472A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
KR1020237042219A 2021-06-10 2022-05-31 마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법 Pending KR20240018472A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021097311A JP7699970B2 (ja) 2021-06-10 2021-06-10 マスクブランク、反射型マスク及び半導体デバイスの製造方法
JPJP-P-2021-097311 2021-06-10
PCT/JP2022/022121 WO2022259915A1 (ja) 2021-06-10 2022-05-31 マスクブランク、反射型マスク及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
KR20240018472A true KR20240018472A (ko) 2024-02-13

Family

ID=84424882

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237042219A Pending KR20240018472A (ko) 2021-06-10 2022-05-31 마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법

Country Status (5)

Country Link
US (1) US20240231216A1 (https=)
JP (1) JP7699970B2 (https=)
KR (1) KR20240018472A (https=)
TW (1) TWI909059B (https=)
WO (1) WO2022259915A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024089128A (ja) * 2022-12-21 2024-07-03 信越化学工業株式会社 反射型マスクブランク、反射型マスク及びその製造方法
KR20250111513A (ko) * 2024-01-15 2025-07-22 주식회사 에스앤에스텍 위상반전막 패턴이 반사패턴으로 사용되는 리버스 포토마스크 및 이를 제작하기 위한 블랭크마스크

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006798A (ja) 2002-04-11 2004-01-08 Hoya Corp 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP2018146945A (ja) 2017-03-03 2018-09-20 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2742056B2 (ja) * 1988-06-14 1998-04-22 富士通株式会社 Ｘ線マスク
JP2877190B2 (ja) * 1996-01-09 1999-03-31 日本電気株式会社 Ｘ線マスク及びその製造方法
WO2020235612A1 (ja) 2019-05-21 2020-11-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006798A (ja) 2002-04-11 2004-01-08 Hoya Corp 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP2018146945A (ja) 2017-03-03 2018-09-20 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Also Published As

Publication number Publication date
JP2022188992A (ja) 2022-12-22
TW202248741A (zh) 2022-12-16
TWI909059B (zh) 2025-12-21
WO2022259915A1 (ja) 2022-12-15
US20240231216A1 (en) 2024-07-11
JP7699970B2 (ja) 2025-06-30

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