TWI882374B - 光檢測裝置及電子機器 - Google Patents

光檢測裝置及電子機器 Download PDF

Info

Publication number
TWI882374B
TWI882374B TW112124740A TW112124740A TWI882374B TW I882374 B TWI882374 B TW I882374B TW 112124740 A TW112124740 A TW 112124740A TW 112124740 A TW112124740 A TW 112124740A TW I882374 B TWI882374 B TW I882374B
Authority
TW
Taiwan
Prior art keywords
transistor
pixel
region
semiconductor region
semiconductor
Prior art date
Application number
TW112124740A
Other languages
English (en)
Chinese (zh)
Other versions
TW202433950A (zh
Inventor
米田和弘
大長央
福永寛
大竹悠介
遠藤表徳
中澤圭一
大石秀俊
Original Assignee
日商索尼半導體解決方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202433950A publication Critical patent/TW202433950A/zh
Application granted granted Critical
Publication of TWI882374B publication Critical patent/TWI882374B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW112124740A 2022-02-15 2023-07-03 光檢測裝置及電子機器 TWI882374B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263310267P 2022-02-15 2022-02-15
WOPCT/JP2023/004902 2023-02-14
PCT/JP2023/004902 WO2023157819A1 (ja) 2022-02-15 2023-02-14 光検出装置および電子機器

Publications (2)

Publication Number Publication Date
TW202433950A TW202433950A (zh) 2024-08-16
TWI882374B true TWI882374B (zh) 2025-05-01

Family

ID=87578239

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112124740A TWI882374B (zh) 2022-02-15 2023-07-03 光檢測裝置及電子機器

Country Status (7)

Country Link
US (1) US20250133845A1 (https=)
EP (1) EP4481827A4 (https=)
JP (2) JP7364826B1 (https=)
KR (1) KR20240148835A (https=)
CN (1) CN118302861A (https=)
TW (1) TWI882374B (https=)
WO (1) WO2023157819A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025204812A1 (ja) * 2024-03-29 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140077067A1 (en) * 2011-05-24 2014-03-20 Panasonic Corporation Solid-state imaging device
US20200075647A1 (en) * 2018-08-31 2020-03-05 Shanghai Huali Microelectronics Corporation Pixel structure and manufacturing method therefor
WO2020195781A1 (ja) * 2019-03-28 2020-10-01 パナソニックＩｐマネジメント株式会社 光検出器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5564874B2 (ja) 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP5581698B2 (ja) * 2010-01-06 2014-09-03 株式会社ニコン 固体撮像素子
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2015153772A (ja) * 2014-02-10 2015-08-24 株式会社東芝 固体撮像装置
JP2016039315A (ja) * 2014-08-08 2016-03-22 株式会社東芝 固体撮像素子
JP7117110B2 (ja) 2018-01-31 2022-08-12 ソニーグループ株式会社 光電変換素子および撮像装置
JP2019145544A (ja) * 2018-02-16 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子
DE112019002463T5 (de) * 2018-05-16 2021-04-22 Sony Semiconductor Solutions Corporation Festkörperbildgebungselement und festkörperbildgebungsvorrichtung
TWI834644B (zh) 2018-05-18 2024-03-11 日商索尼半導體解決方案公司 攝像元件及電子機器
US12136639B2 (en) 2018-11-06 2024-11-05 Sony Semiconductor Solutions Corporation Imaging element and electronic equipment
CN115380381A (zh) * 2020-04-20 2022-11-22 索尼半导体解决方案公司 固态摄像元件
US11450700B2 (en) 2020-07-29 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor image sensor pixel isolation structure for reducing crosstalk

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140077067A1 (en) * 2011-05-24 2014-03-20 Panasonic Corporation Solid-state imaging device
US20200075647A1 (en) * 2018-08-31 2020-03-05 Shanghai Huali Microelectronics Corporation Pixel structure and manufacturing method therefor
WO2020195781A1 (ja) * 2019-03-28 2020-10-01 パナソニックＩｐマネジメント株式会社 光検出器

Also Published As

Publication number Publication date
JPWO2023157819A1 (https=) 2023-08-24
EP4481827A1 (en) 2024-12-25
JP2023179619A (ja) 2023-12-19
TW202433950A (zh) 2024-08-16
CN118302861A (zh) 2024-07-05
EP4481827A4 (en) 2025-10-08
WO2023157819A1 (ja) 2023-08-24
KR20240148835A (ko) 2024-10-11
JP7364826B1 (ja) 2023-10-18
JP7589310B2 (ja) 2024-11-25
US20250133845A1 (en) 2025-04-24

Similar Documents

Publication Publication Date Title
TWI860337B (zh) 攝像元件及半導體元件
WO2021100332A1 (ja) 半導体装置、固体撮像装置及び電子機器
TWI882374B (zh) 光檢測裝置及電子機器
WO2024142627A1 (en) Photodetector and electronic apparatus
WO2024111280A1 (ja) 光検出装置および電子機器
WO2024166741A1 (ja) 光検出装置および電子機器
WO2025033198A2 (en) Photodetector and electronic apparatus
EP4693405A1 (en) Light detection device and electronic device
KR20260044961A (ko) 광 검출 장치 및 전자 기기
WO2025142160A1 (ja) 光検出装置および電子機器
JP2025043667A (ja) 光検出装置および電子機器
WO2024202672A1 (ja) 光検出装置および電子機器
WO2025169620A1 (ja) 光検出装置および電子機器
WO2026053610A1 (ja) 光検出装置
WO2025169621A1 (ja) 光検出装置
TW202520924A (zh) 光檢測裝置及電子機器
WO2026079076A1 (ja) 光検出装置および電子機器
WO2025134554A1 (ja) 固体撮像装置
TW202433668A (zh) 固態成像元件
TW202433097A (zh) 光學元件，光偵測器及電子裝置
WO2024127853A1 (ja) 光検出装置及び電子機器
KR20250136838A (ko) 반도체 장치
CN119817193A (zh) 光检测装置和电子设备