JPWO2023157819A1 - - Google Patents
Info
- Publication number
- JPWO2023157819A1 JPWO2023157819A1 JP2023535881A JP2023535881A JPWO2023157819A1 JP WO2023157819 A1 JPWO2023157819 A1 JP WO2023157819A1 JP 2023535881 A JP2023535881 A JP 2023535881A JP 2023535881 A JP2023535881 A JP 2023535881A JP WO2023157819 A1 JPWO2023157819 A1 JP WO2023157819A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023172956A JP7589310B2 (ja) | 2022-02-15 | 2023-10-04 | 光検出装置および電子機器 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263310267P | 2022-02-15 | 2022-02-15 | |
| US63/310267 | 2022-02-15 | ||
| PCT/JP2023/004902 WO2023157819A1 (ja) | 2022-02-15 | 2023-02-14 | 光検出装置および電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023172956A Division JP7589310B2 (ja) | 2022-02-15 | 2023-10-04 | 光検出装置および電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023157819A1 true JPWO2023157819A1 (https=) | 2023-08-24 |
| JP7364826B1 JP7364826B1 (ja) | 2023-10-18 |
| JPWO2023157819A5 JPWO2023157819A5 (https=) | 2024-01-24 |
Family
ID=87578239
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023535881A Active JP7364826B1 (ja) | 2022-02-15 | 2023-02-14 | 光検出装置および電子機器 |
| JP2023172956A Active JP7589310B2 (ja) | 2022-02-15 | 2023-10-04 | 光検出装置および電子機器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023172956A Active JP7589310B2 (ja) | 2022-02-15 | 2023-10-04 | 光検出装置および電子機器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250133845A1 (https=) |
| EP (1) | EP4481827A4 (https=) |
| JP (2) | JP7364826B1 (https=) |
| KR (1) | KR20240148835A (https=) |
| CN (1) | CN118302861A (https=) |
| TW (1) | TWI882374B (https=) |
| WO (1) | WO2023157819A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025204812A1 (ja) * | 2024-03-29 | 2025-10-02 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5564874B2 (ja) | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
| JP5581698B2 (ja) * | 2010-01-06 | 2014-09-03 | 株式会社ニコン | 固体撮像素子 |
| JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| JPWO2012160802A1 (ja) * | 2011-05-24 | 2014-07-31 | パナソニック株式会社 | 固体撮像装置 |
| JP2015153772A (ja) * | 2014-02-10 | 2015-08-24 | 株式会社東芝 | 固体撮像装置 |
| JP2016039315A (ja) * | 2014-08-08 | 2016-03-22 | 株式会社東芝 | 固体撮像素子 |
| JP7117110B2 (ja) | 2018-01-31 | 2022-08-12 | ソニーグループ株式会社 | 光電変換素子および撮像装置 |
| JP2019145544A (ja) * | 2018-02-16 | 2019-08-29 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子 |
| DE112019002463T5 (de) * | 2018-05-16 | 2021-04-22 | Sony Semiconductor Solutions Corporation | Festkörperbildgebungselement und festkörperbildgebungsvorrichtung |
| TWI834644B (zh) | 2018-05-18 | 2024-03-11 | 日商索尼半導體解決方案公司 | 攝像元件及電子機器 |
| CN109166873B (zh) * | 2018-08-31 | 2021-05-25 | 上海华力微电子有限公司 | 一种像素结构及其制造方法 |
| US12136639B2 (en) | 2018-11-06 | 2024-11-05 | Sony Semiconductor Solutions Corporation | Imaging element and electronic equipment |
| CN113614932B (zh) * | 2019-03-28 | 2024-01-09 | 松下知识产权经营株式会社 | 光检测器 |
| CN115380381A (zh) * | 2020-04-20 | 2022-11-22 | 索尼半导体解决方案公司 | 固态摄像元件 |
| US11450700B2 (en) | 2020-07-29 | 2022-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor image sensor pixel isolation structure for reducing crosstalk |
-
2023
- 2023-02-14 KR KR1020247026705A patent/KR20240148835A/ko active Pending
- 2023-02-14 US US18/836,261 patent/US20250133845A1/en active Pending
- 2023-02-14 JP JP2023535881A patent/JP7364826B1/ja active Active
- 2023-02-14 EP EP23756344.0A patent/EP4481827A4/en active Pending
- 2023-02-14 WO PCT/JP2023/004902 patent/WO2023157819A1/ja not_active Ceased
- 2023-02-14 CN CN202380014048.5A patent/CN118302861A/zh active Pending
- 2023-07-03 TW TW112124740A patent/TWI882374B/zh active
- 2023-10-04 JP JP2023172956A patent/JP7589310B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP4481827A1 (en) | 2024-12-25 |
| JP2023179619A (ja) | 2023-12-19 |
| TW202433950A (zh) | 2024-08-16 |
| CN118302861A (zh) | 2024-07-05 |
| EP4481827A4 (en) | 2025-10-08 |
| WO2023157819A1 (ja) | 2023-08-24 |
| TWI882374B (zh) | 2025-05-01 |
| KR20240148835A (ko) | 2024-10-11 |
| JP7364826B1 (ja) | 2023-10-18 |
| JP7589310B2 (ja) | 2024-11-25 |
| US20250133845A1 (en) | 2025-04-24 |
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