TWI874370B - 電漿蝕刻裝置及電漿蝕刻方法 - Google Patents

電漿蝕刻裝置及電漿蝕刻方法 Download PDF

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Publication number
TWI874370B
TWI874370B TW109108730A TW109108730A TWI874370B TW I874370 B TWI874370 B TW I874370B TW 109108730 A TW109108730 A TW 109108730A TW 109108730 A TW109108730 A TW 109108730A TW I874370 B TWI874370 B TW I874370B
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TW
Taiwan
Prior art keywords
frequency power
supply
pulse signal
plasma etching
processing container
Prior art date
Application number
TW109108730A
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English (en)
Chinese (zh)
Other versions
TW202040690A (zh
Inventor
田中聡志
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202040690A publication Critical patent/TW202040690A/zh
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Publication of TWI874370B publication Critical patent/TWI874370B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW109108730A 2019-03-28 2020-03-17 電漿蝕刻裝置及電漿蝕刻方法 TWI874370B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019063648A JP7061981B2 (ja) 2019-03-28 2019-03-28 プラズマエッチング装置およびプラズマエッチング方法
JP2019-063648 2019-03-28

Publications (2)

Publication Number Publication Date
TW202040690A TW202040690A (zh) 2020-11-01
TWI874370B true TWI874370B (zh) 2025-03-01

Family

ID=72603657

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109108730A TWI874370B (zh) 2019-03-28 2020-03-17 電漿蝕刻裝置及電漿蝕刻方法

Country Status (5)

Country Link
US (2) US11145493B2 (https=)
JP (1) JP7061981B2 (https=)
KR (1) KR102905689B1 (https=)
CN (1) CN111755357B (https=)
TW (1) TWI874370B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7433095B2 (ja) * 2020-03-18 2024-02-19 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7576484B2 (ja) * 2021-02-16 2024-10-31 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7667060B2 (ja) * 2021-10-22 2025-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
US20230343554A1 (en) * 2022-04-20 2023-10-26 Tokyo Electron Limited Methods To Provide Anisotropic Etching Of Metal Hard Masks Using A Radio Frequency Modulated Pulsed Plasma Scheme
KR20240031042A (ko) * 2022-08-30 2024-03-07 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845903A (ja) * 1994-07-27 1996-02-16 Hitachi Ltd プラズマエッチング方法
JP2016157735A (ja) * 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017069542A (ja) * 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2017098323A (ja) * 2015-11-19 2017-06-01 東京エレクトロン株式会社 プラズマエッチング方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224796A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
KR100317915B1 (ko) 1999-03-22 2001-12-22 윤종용 플라즈마 식각 장치
JP2001168086A (ja) * 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US8974684B2 (en) * 2011-10-28 2015-03-10 Applied Materials, Inc. Synchronous embedded radio frequency pulsing for plasma etching
JP6408903B2 (ja) * 2014-12-25 2018-10-17 東京エレクトロン株式会社 エッチング処理方法及びエッチング処理装置
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
KR102145815B1 (ko) * 2016-01-18 2020-08-19 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
US10720313B2 (en) * 2017-08-23 2020-07-21 Tokyo Electron Limited Measuring device, measurement method, and plasma processing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845903A (ja) * 1994-07-27 1996-02-16 Hitachi Ltd プラズマエッチング方法
JP2016157735A (ja) * 2015-02-23 2016-09-01 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2017069542A (ja) * 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2017098323A (ja) * 2015-11-19 2017-06-01 東京エレクトロン株式会社 プラズマエッチング方法

Also Published As

Publication number Publication date
CN111755357A (zh) 2020-10-09
KR20200116055A (ko) 2020-10-08
JP2020167186A (ja) 2020-10-08
TW202040690A (zh) 2020-11-01
US11996271B2 (en) 2024-05-28
KR102905689B1 (ko) 2025-12-31
US11145493B2 (en) 2021-10-12
US20210407767A1 (en) 2021-12-30
US20200312622A1 (en) 2020-10-01
CN111755357B (zh) 2025-08-22
JP7061981B2 (ja) 2022-05-02

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