TWI856815B - 記憶體元件及其形成方法 - Google Patents

記憶體元件及其形成方法 Download PDF

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Publication number
TWI856815B
TWI856815B TW112134989A TW112134989A TWI856815B TW I856815 B TWI856815 B TW I856815B TW 112134989 A TW112134989 A TW 112134989A TW 112134989 A TW112134989 A TW 112134989A TW I856815 B TWI856815 B TW I856815B
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TW
Taiwan
Prior art keywords
forming
same
memory device
memory
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TW112134989A
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English (en)
Inventor
廖廷豐
翁茂元
劉光文
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旺宏電子股份有限公司
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Publication of TWI856815B publication Critical patent/TWI856815B/zh

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TW112134989A 2023-09-14 記憶體元件及其形成方法 TWI856815B (zh)

Publications (1)

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TWI856815B true TWI856815B (zh) 2024-09-21

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210305270A1 (en) 2020-03-31 2021-09-30 Samsung Electronics Co., Ltd. Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210305270A1 (en) 2020-03-31 2021-09-30 Samsung Electronics Co., Ltd. Semiconductor device

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