TWI855105B - 密封用樹脂片材 - Google Patents
密封用樹脂片材 Download PDFInfo
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- TWI855105B TWI855105B TW109123359A TW109123359A TWI855105B TW I855105 B TWI855105 B TW I855105B TW 109123359 A TW109123359 A TW 109123359A TW 109123359 A TW109123359 A TW 109123359A TW I855105 B TWI855105 B TW I855105B
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- Taiwan
- Prior art keywords
- resin sheet
- sealing resin
- mass
- sealing
- layered silicate
- Prior art date
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- 238000007789 sealing Methods 0.000 title claims abstract description 192
- 229920005989 resin Polymers 0.000 title claims abstract description 176
- 239000011347 resin Substances 0.000 title claims abstract description 176
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 51
- -1 silicate compound Chemical class 0.000 claims abstract description 47
- 239000011256 inorganic filler Substances 0.000 claims description 29
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 29
- 239000000440 bentonite Substances 0.000 claims description 13
- 229910000278 bentonite Inorganic materials 0.000 claims description 13
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 description 44
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- 239000002245 particle Substances 0.000 description 15
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 13
- 239000010410 layer Substances 0.000 description 13
- 239000004848 polyfunctional curative Substances 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
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- 239000000049 pigment Substances 0.000 description 9
- 150000004760 silicates Chemical class 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
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- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- OGQYPPBGSLZBEG-UHFFFAOYSA-N dimethyl(dioctadecyl)azanium Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CCCCCCCCCCCCCCCCCC OGQYPPBGSLZBEG-UHFFFAOYSA-N 0.000 description 4
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- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 3
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- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 3
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- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 2
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- AMKUSFIBHAUBIJ-UHFFFAOYSA-N 1-hexylpyridin-1-ium Chemical compound CCCCCC[N+]1=CC=CC=C1 AMKUSFIBHAUBIJ-UHFFFAOYSA-N 0.000 description 1
- HIWVFNVUJDPDKS-UHFFFAOYSA-N 1-octadecylpyridin-1-ium Chemical compound CCCCCCCCCCCCCCCCCC[N+]1=CC=CC=C1 HIWVFNVUJDPDKS-UHFFFAOYSA-N 0.000 description 1
- XDEQOBPALZZTCA-UHFFFAOYSA-N 1-octylpyridin-1-ium Chemical compound CCCCCCCC[N+]1=CC=CC=C1 XDEQOBPALZZTCA-UHFFFAOYSA-N 0.000 description 1
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- PYOVYRAEANOJDK-UHFFFAOYSA-O 2,3-didodecyl-1h-imidazol-3-ium Chemical compound CCCCCCCCCCCCC=1NC=C[N+]=1CCCCCCCCCCCC PYOVYRAEANOJDK-UHFFFAOYSA-O 0.000 description 1
- OCGYYXGMWIETIH-UHFFFAOYSA-O 2,3-dihexyl-1h-imidazol-3-ium Chemical compound CCCCCCC=1NC=C[N+]=1CCCCCC OCGYYXGMWIETIH-UHFFFAOYSA-O 0.000 description 1
- GFVBIUIUYOEJTA-UHFFFAOYSA-O 2,3-dioctadecyl-1h-imidazol-3-ium Chemical compound CCCCCCCCCCCCCCCCCCC=1NC=C[N+]=1CCCCCCCCCCCCCCCCCC GFVBIUIUYOEJTA-UHFFFAOYSA-O 0.000 description 1
- YYQIIXAUOQHVEF-UHFFFAOYSA-O 2,3-dioctyl-1h-imidazol-3-ium Chemical compound CCCCCCCCC=1NC=C[N+]=1CCCCCCCC YYQIIXAUOQHVEF-UHFFFAOYSA-O 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
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- OWOSSTCHCATHMM-UHFFFAOYSA-O 2-methyl-3-octyl-1h-imidazol-3-ium Chemical compound CCCCCCCCN1C=C[NH+]=C1C OWOSSTCHCATHMM-UHFFFAOYSA-O 0.000 description 1
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- CYUZOYPRAQASLN-UHFFFAOYSA-N 3-prop-2-enoyloxypropanoic acid Chemical compound OC(=O)CCOC(=O)C=C CYUZOYPRAQASLN-UHFFFAOYSA-N 0.000 description 1
- HDPBBNNDDQOWPJ-UHFFFAOYSA-N 4-[1,2,2-tris(4-hydroxyphenyl)ethyl]phenol Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 HDPBBNNDDQOWPJ-UHFFFAOYSA-N 0.000 description 1
- JSZCJJRQCFZXCI-UHFFFAOYSA-N 6-prop-2-enoyloxyhexanoic acid Chemical compound OC(=O)CCCCCOC(=O)C=C JSZCJJRQCFZXCI-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
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- 238000007865 diluting Methods 0.000 description 1
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- JKODDBUWSNWKJZ-UHFFFAOYSA-N dimethyl(dioctadecyl)phosphanium Chemical compound CCCCCCCCCCCCCCCCCC[P+](C)(C)CCCCCCCCCCCCCCCCCC JKODDBUWSNWKJZ-UHFFFAOYSA-N 0.000 description 1
- DHBOXTOKYLNYNM-UHFFFAOYSA-N dioctadecylphosphane Chemical compound CCCCCCCCCCCCCCCCCCPCCCCCCCCCCCCCCCCCC DHBOXTOKYLNYNM-UHFFFAOYSA-N 0.000 description 1
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- 238000001035 drying Methods 0.000 description 1
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 229920006132 styrene block copolymer Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229920006259 thermoplastic polyimide Polymers 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- XTAZYLNFDRKIHJ-UHFFFAOYSA-O trioctylazanium Chemical compound CCCCCCCC[NH+](CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-O 0.000 description 1
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
- C08J2363/02—Polyglycidyl ethers of bis-phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2433/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
- C08K7/18—Solid spheres inorganic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (4)
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JP2019-130201 | 2019-07-12 | ||
JP2019130201 | 2019-07-12 | ||
WOPCT/JP2020/026419 | 2020-07-06 | ||
PCT/JP2020/026419 WO2021010207A1 (ja) | 2019-07-12 | 2020-07-06 | 封止用樹脂シート |
Publications (2)
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TW202111074A TW202111074A (zh) | 2021-03-16 |
TWI855105B true TWI855105B (zh) | 2024-09-11 |
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TW109123359A TWI855105B (zh) | 2019-07-12 | 2020-07-10 | 密封用樹脂片材 |
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JP (1) | JPWO2021010207A1 (enrdf_load_stackoverflow) |
KR (1) | KR20220035094A (enrdf_load_stackoverflow) |
CN (1) | CN114174424B (enrdf_load_stackoverflow) |
TW (1) | TWI855105B (enrdf_load_stackoverflow) |
WO (1) | WO2021010207A1 (enrdf_load_stackoverflow) |
Citations (2)
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JP2005133055A (ja) * | 2003-02-03 | 2005-05-26 | Sekisui Chem Co Ltd | 樹脂組成物、基板用材料及び基板用フィルム |
TW201925336A (zh) * | 2017-10-27 | 2019-07-01 | 日商積水化學工業股份有限公司 | 硬化性樹脂組成物、硬化物、接著劑、及接著膜 |
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JP2008189858A (ja) * | 2007-02-07 | 2008-08-21 | Nitto Denko Corp | 感圧性粘着テープ |
CN102159616B (zh) * | 2008-09-24 | 2014-08-06 | 积水化学工业株式会社 | 树脂组合物、固化体及层叠体 |
WO2015025701A1 (ja) * | 2013-08-20 | 2015-02-26 | 株式会社Adeka | 難燃性合成樹脂組成物 |
CN105917462B (zh) * | 2013-11-28 | 2019-10-15 | 日东电工株式会社 | 密封用热固化性树脂片及中空封装体的制造方法 |
JP6422370B2 (ja) | 2015-03-03 | 2018-11-14 | 日東電工株式会社 | 中空型電子デバイス封止用シート、及び、中空型電子デバイスパッケージの製造方法 |
JP6903992B2 (ja) * | 2017-03-27 | 2021-07-14 | 味の素株式会社 | 封止用樹脂組成物および封止用シート |
JP7171365B2 (ja) * | 2017-10-27 | 2022-11-15 | 積水化学工業株式会社 | 硬化性樹脂組成物、硬化物、接着剤、及び、接着フィルム |
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2020
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- 2020-07-06 CN CN202080050017.1A patent/CN114174424B/zh active Active
- 2020-07-06 JP JP2021532795A patent/JPWO2021010207A1/ja active Pending
- 2020-07-06 KR KR1020227000270A patent/KR20220035094A/ko active Pending
- 2020-07-10 TW TW109123359A patent/TWI855105B/zh active
Patent Citations (2)
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JP2005133055A (ja) * | 2003-02-03 | 2005-05-26 | Sekisui Chem Co Ltd | 樹脂組成物、基板用材料及び基板用フィルム |
TW201925336A (zh) * | 2017-10-27 | 2019-07-01 | 日商積水化學工業股份有限公司 | 硬化性樹脂組成物、硬化物、接著劑、及接著膜 |
Also Published As
Publication number | Publication date |
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KR20220035094A (ko) | 2022-03-21 |
CN114174424B (zh) | 2024-12-24 |
JPWO2021010207A1 (enrdf_load_stackoverflow) | 2021-01-21 |
WO2021010207A1 (ja) | 2021-01-21 |
TW202111074A (zh) | 2021-03-16 |
CN114174424A (zh) | 2022-03-11 |
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