TWI854868B - 帶電粒子線裝置及推定試料的特性之方法 - Google Patents

帶電粒子線裝置及推定試料的特性之方法 Download PDF

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Publication number
TWI854868B
TWI854868B TW112140991A TW112140991A TWI854868B TW I854868 B TWI854868 B TW I854868B TW 112140991 A TW112140991 A TW 112140991A TW 112140991 A TW112140991 A TW 112140991A TW I854868 B TWI854868 B TW I854868B
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TW
Taiwan
Prior art keywords
charged particle
particle beam
sample
characteristic
different
Prior art date
Application number
TW112140991A
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English (en)
Chinese (zh)
Other versions
TW202427531A (zh
Inventor
白崎保宏
津野夏規
內保美南
榊原慎
谷內一史
Original Assignee
日商日立全球先端科技股份有限公司
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Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202427531A publication Critical patent/TW202427531A/zh
Application granted granted Critical
Publication of TWI854868B publication Critical patent/TWI854868B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW112140991A 2022-12-15 2023-10-26 帶電粒子線裝置及推定試料的特性之方法 TWI854868B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2022/046201 2022-12-15
PCT/JP2022/046201 WO2024127586A1 (ja) 2022-12-15 2022-12-15 荷電粒子線装置及び試料の特性を推定する方法

Publications (2)

Publication Number Publication Date
TW202427531A TW202427531A (zh) 2024-07-01
TWI854868B true TWI854868B (zh) 2024-09-01

Family

ID=91484646

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112140991A TWI854868B (zh) 2022-12-15 2023-10-26 帶電粒子線裝置及推定試料的特性之方法

Country Status (4)

Country Link
JP (1) JPWO2024127586A1 (https=)
KR (1) KR20250090315A (https=)
TW (1) TWI854868B (https=)
WO (1) WO2024127586A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202041854A (zh) * 2019-05-13 2020-11-16 日商日立全球先端科技股份有限公司 圖案評估系統及圖案評估方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
JP2000314710A (ja) * 1999-04-28 2000-11-14 Hitachi Ltd 回路パターンの検査方法及び検査装置
KR100499160B1 (ko) * 2003-01-15 2005-07-01 삼성전자주식회사 웨이퍼의 검사 방법 및 웨이퍼의 검사 장치
JP2004266069A (ja) * 2003-02-28 2004-09-24 Sharp Corp 半導体集積回路の不良箇所特定用試料の作成方法及び不良箇所特定方法
JP4248382B2 (ja) * 2003-12-04 2009-04-02 株式会社日立ハイテクノロジーズ 荷電粒子ビームによる検査方法および検査装置
JP4828162B2 (ja) * 2005-05-31 2011-11-30 株式会社日立ハイテクノロジーズ 電子顕微鏡応用装置および試料検査方法
JP4728361B2 (ja) * 2008-03-06 2011-07-20 株式会社日立製作所 荷電粒子線を用いた基板検査装置および基板検査方法
JP4745380B2 (ja) * 2008-12-26 2011-08-10 株式会社日立製作所 レビューｓｅｍ
US10649026B2 (en) * 2017-03-30 2020-05-12 Globalfoundries Inc. Apparatus for and method of net trace prior level subtraction
JP7285728B2 (ja) * 2019-08-07 2023-06-02 株式会社日立ハイテク 電気特性を導出するシステム及び非一時的コンピューター可読媒体
JP7493047B2 (ja) 2020-09-18 2024-05-30 株式会社日立ハイテク 検査システム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202041854A (zh) * 2019-05-13 2020-11-16 日商日立全球先端科技股份有限公司 圖案評估系統及圖案評估方法

Also Published As

Publication number Publication date
WO2024127586A1 (ja) 2024-06-20
TW202427531A (zh) 2024-07-01
KR20250090315A (ko) 2025-06-19
JPWO2024127586A1 (https=) 2024-06-20

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