KR20250090315A - 하전 입자선 장치 및 시료의 특성을 추정하는 방법 - Google Patents

하전 입자선 장치 및 시료의 특성을 추정하는 방법 Download PDF

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Publication number
KR20250090315A
KR20250090315A KR1020257015794A KR20257015794A KR20250090315A KR 20250090315 A KR20250090315 A KR 20250090315A KR 1020257015794 A KR1020257015794 A KR 1020257015794A KR 20257015794 A KR20257015794 A KR 20257015794A KR 20250090315 A KR20250090315 A KR 20250090315A
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KR
South Korea
Prior art keywords
charged particle
sample
particle beam
characteristic
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257015794A
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English (en)
Korean (ko)
Inventor
야스히로 시라사끼
나쯔끼 즈노
미나미 우찌호
마꼬또 사까끼바라
가즈후미 야찌
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20250090315A publication Critical patent/KR20250090315A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020257015794A 2022-12-15 2022-12-15 하전 입자선 장치 및 시료의 특성을 추정하는 방법 Pending KR20250090315A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/046201 WO2024127586A1 (ja) 2022-12-15 2022-12-15 荷電粒子線装置及び試料の特性を推定する方法

Publications (1)

Publication Number Publication Date
KR20250090315A true KR20250090315A (ko) 2025-06-19

Family

ID=91484646

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257015794A Pending KR20250090315A (ko) 2022-12-15 2022-12-15 하전 입자선 장치 및 시료의 특성을 추정하는 방법

Country Status (4)

Country Link
JP (1) JPWO2024127586A1 (https=)
KR (1) KR20250090315A (https=)
TW (1) TWI854868B (https=)
WO (1) WO2024127586A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022059202A1 (ja) 2020-09-18 2022-03-24 株式会社日立ハイテク 検査システム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
JP2000314710A (ja) * 1999-04-28 2000-11-14 Hitachi Ltd 回路パターンの検査方法及び検査装置
KR100499160B1 (ko) * 2003-01-15 2005-07-01 삼성전자주식회사 웨이퍼의 검사 방법 및 웨이퍼의 검사 장치
JP2004266069A (ja) * 2003-02-28 2004-09-24 Sharp Corp 半導体集積回路の不良箇所特定用試料の作成方法及び不良箇所特定方法
JP4248382B2 (ja) * 2003-12-04 2009-04-02 株式会社日立ハイテクノロジーズ 荷電粒子ビームによる検査方法および検査装置
JP4828162B2 (ja) * 2005-05-31 2011-11-30 株式会社日立ハイテクノロジーズ 電子顕微鏡応用装置および試料検査方法
JP4728361B2 (ja) * 2008-03-06 2011-07-20 株式会社日立製作所 荷電粒子線を用いた基板検査装置および基板検査方法
JP4745380B2 (ja) * 2008-12-26 2011-08-10 株式会社日立製作所 レビューｓｅｍ
US10649026B2 (en) * 2017-03-30 2020-05-12 Globalfoundries Inc. Apparatus for and method of net trace prior level subtraction
JP7305422B2 (ja) * 2019-05-13 2023-07-10 株式会社日立ハイテク パターン評価システム及びパターン評価方法
JP7285728B2 (ja) * 2019-08-07 2023-06-02 株式会社日立ハイテク 電気特性を導出するシステム及び非一時的コンピューター可読媒体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022059202A1 (ja) 2020-09-18 2022-03-24 株式会社日立ハイテク 検査システム

Also Published As

Publication number Publication date
WO2024127586A1 (ja) 2024-06-20
TW202427531A (zh) 2024-07-01
JPWO2024127586A1 (https=) 2024-06-20
TWI854868B (zh) 2024-09-01

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