TWI851988B - 射頻阻抗匹配電路、匹配阻抗的方法、用於製造半導體的方法、以及半導體處理工具 - Google Patents
射頻阻抗匹配電路、匹配阻抗的方法、用於製造半導體的方法、以及半導體處理工具 Download PDFInfo
- Publication number
- TWI851988B TWI851988B TW111113028A TW111113028A TWI851988B TW I851988 B TWI851988 B TW I851988B TW 111113028 A TW111113028 A TW 111113028A TW 111113028 A TW111113028 A TW 111113028A TW I851988 B TWI851988 B TW I851988B
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- Prior art keywords
- series
- evc
- input
- capacitor
- impedance
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Links
- 238000000034 method Methods 0.000 title claims description 76
- 238000012545 processing Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000003990 capacitor Substances 0.000 claims abstract description 280
- 230000008859 change Effects 0.000 claims description 45
- 230000000903 blocking effect Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 9
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- 238000005530 etching Methods 0.000 claims description 5
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- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- 238000012360 testing method Methods 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163170768P | 2021-04-05 | 2021-04-05 | |
| US63/170,768 | 2021-04-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202301466A TW202301466A (zh) | 2023-01-01 |
| TWI851988B true TWI851988B (zh) | 2024-08-11 |
Family
ID=81384653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111113028A TWI851988B (zh) | 2021-04-05 | 2022-04-06 | 射頻阻抗匹配電路、匹配阻抗的方法、用於製造半導體的方法、以及半導體處理工具 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240194449A1 (https=) |
| JP (1) | JP2024514551A (https=) |
| KR (1) | KR20240032713A (https=) |
| TW (1) | TWI851988B (https=) |
| WO (1) | WO2022216649A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10431428B2 (en) * | 2014-01-10 | 2019-10-01 | Reno Technologies, Inc. | System for providing variable capacitance |
| WO2024110007A1 (en) * | 2022-11-21 | 2024-05-30 | Hitachi Energy Ltd | Modular multi-level converter for dc transmission |
| CN117459023B (zh) * | 2023-11-17 | 2024-07-16 | 深圳市恒运昌真空技术股份有限公司 | 阻抗匹配阵列、匹配方法、射频电源及等离子体射频系统 |
| US20250316453A1 (en) * | 2024-04-05 | 2025-10-09 | Applied Materials, Inc. | Solid state variable capacitors for rf matches |
| CN118740089A (zh) * | 2024-07-09 | 2024-10-01 | 深圳捷迅通射频技术有限公司 | 一种射频匹配器、匹配方法、装置、设备及介质 |
| US20260074693A1 (en) * | 2024-09-09 | 2026-03-12 | Applied Materials, Inc. | High bandgap switched shunt capacitor architecture |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10269540B1 (en) * | 2018-01-25 | 2019-04-23 | Advanced Energy Industries, Inc. | Impedance matching system and method of operating the same |
| US20200051788A1 (en) * | 2015-06-29 | 2020-02-13 | Reno Technologies, Inc. | Impedance matching network and method |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6677828B1 (en) * | 2000-08-17 | 2004-01-13 | Eni Technology, Inc. | Method of hot switching a plasma tuner |
| EP1891650A4 (en) | 2005-03-05 | 2012-03-28 | Innovation Engineering Llc | ELECTRONICALLY VARIABLE CAPACITOR ARRAY |
| JP2012060104A (ja) * | 2010-08-11 | 2012-03-22 | Toshiba Corp | 電源制御装置、プラズマ処理装置、及びプラズマ処理方法 |
| EP3048741B1 (en) * | 2013-10-25 | 2018-09-12 | Huawei Technologies Co., Ltd. | Copper wire interface circuit |
| US9844127B2 (en) | 2014-01-10 | 2017-12-12 | Reno Technologies, Inc. | High voltage switching circuit |
| US10679824B2 (en) | 2015-06-29 | 2020-06-09 | Reno Technologies, Inc. | Capacitance variation |
| US10431428B2 (en) | 2014-01-10 | 2019-10-01 | Reno Technologies, Inc. | System for providing variable capacitance |
| US10340879B2 (en) | 2015-02-18 | 2019-07-02 | Reno Technologies, Inc. | Switching circuit |
| US10692699B2 (en) | 2015-06-29 | 2020-06-23 | Reno Technologies, Inc. | Impedance matching with restricted capacitor switching |
| US10229816B2 (en) * | 2016-05-24 | 2019-03-12 | Mks Instruments, Inc. | Solid-state impedance matching systems including a hybrid tuning network with a switchable coarse tuning network and a varactor fine tuning network |
| US10148231B2 (en) * | 2016-06-14 | 2018-12-04 | Analogic Corporation | RF power amplifier with dynamic impedance matching through discrete presets and/or a variable power supply |
| US20180175819A1 (en) * | 2016-12-16 | 2018-06-21 | Lam Research Corporation | Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor |
| US11521833B2 (en) | 2017-07-10 | 2022-12-06 | Reno Technologies, Inc. | Combined RF generator and RF solid-state matching network |
| US12272522B2 (en) * | 2017-07-10 | 2025-04-08 | Asm America, Inc. | Resonant filter for solid state RF impedance matching network |
| JP7211806B2 (ja) * | 2018-12-26 | 2023-01-24 | 株式会社ダイヘン | インピーダンス整合装置及びインピーダンス整合方法 |
| JP7105184B2 (ja) * | 2018-12-27 | 2022-07-22 | 株式会社ダイヘン | インピーダンス整合装置及びインピーダンス整合方法 |
| US12355418B2 (en) * | 2021-11-01 | 2025-07-08 | Advanced Energy Industries, Inc. | Two stage pin diode driver with energy recovery |
| US12537483B2 (en) * | 2022-11-15 | 2026-01-27 | Nxp Usa, Inc. | Amplifier device with low frequency resonance decoupling circuitry |
-
2022
- 2022-04-05 US US18/553,890 patent/US20240194449A1/en active Pending
- 2022-04-05 JP JP2023561031A patent/JP2024514551A/ja active Pending
- 2022-04-05 KR KR1020237037551A patent/KR20240032713A/ko active Pending
- 2022-04-05 WO PCT/US2022/023395 patent/WO2022216649A1/en not_active Ceased
- 2022-04-06 TW TW111113028A patent/TWI851988B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200051788A1 (en) * | 2015-06-29 | 2020-02-13 | Reno Technologies, Inc. | Impedance matching network and method |
| US10269540B1 (en) * | 2018-01-25 | 2019-04-23 | Advanced Energy Industries, Inc. | Impedance matching system and method of operating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202301466A (zh) | 2023-01-01 |
| US20240194449A1 (en) | 2024-06-13 |
| KR20240032713A (ko) | 2024-03-12 |
| WO2022216649A1 (en) | 2022-10-13 |
| JP2024514551A (ja) | 2024-04-02 |
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