KR20240032713A - Rf 임피던스 매칭 네트워크 - Google Patents

Rf 임피던스 매칭 네트워크 Download PDF

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Publication number
KR20240032713A
KR20240032713A KR1020237037551A KR20237037551A KR20240032713A KR 20240032713 A KR20240032713 A KR 20240032713A KR 1020237037551 A KR1020237037551 A KR 1020237037551A KR 20237037551 A KR20237037551 A KR 20237037551A KR 20240032713 A KR20240032713 A KR 20240032713A
Authority
KR
South Korea
Prior art keywords
series
evc
input
capacitor
variable capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237037551A
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English (en)
Korean (ko)
Inventor
임란 아메드 부타
Original Assignee
에이에스엠 아이피 홀딩 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠 아이피 홀딩 비.브이. filed Critical 에이에스엠 아이피 홀딩 비.브이.
Publication of KR20240032713A publication Critical patent/KR20240032713A/ko
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020237037551A 2021-04-05 2022-04-05 Rf 임피던스 매칭 네트워크 Pending KR20240032713A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163170768P 2021-04-05 2021-04-05
US63/170,768 2021-04-05
PCT/US2022/023395 WO2022216649A1 (en) 2021-04-05 2022-04-05 Rf impedance matching network

Publications (1)

Publication Number Publication Date
KR20240032713A true KR20240032713A (ko) 2024-03-12

Family

ID=81384653

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237037551A Pending KR20240032713A (ko) 2021-04-05 2022-04-05 Rf 임피던스 매칭 네트워크

Country Status (5)

Country Link
US (1) US20240194449A1 (https=)
JP (1) JP2024514551A (https=)
KR (1) KR20240032713A (https=)
TW (1) TWI851988B (https=)
WO (1) WO2022216649A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118740089A (zh) * 2024-07-09 2024-10-01 深圳捷迅通射频技术有限公司 一种射频匹配器、匹配方法、装置、设备及介质
WO2026054971A1 (en) * 2024-09-09 2026-03-12 Applied Materials, Inc. High bandgap switched shunt capacitor architecture

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10431428B2 (en) * 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
WO2024110007A1 (en) * 2022-11-21 2024-05-30 Hitachi Energy Ltd Modular multi-level converter for dc transmission
CN117459023B (zh) * 2023-11-17 2024-07-16 深圳市恒运昌真空技术股份有限公司 阻抗匹配阵列、匹配方法、射频电源及等离子体射频系统
US20250316453A1 (en) * 2024-04-05 2025-10-09 Applied Materials, Inc. Solid state variable capacitors for rf matches

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US6677828B1 (en) * 2000-08-17 2004-01-13 Eni Technology, Inc. Method of hot switching a plasma tuner
EP1891650A4 (en) 2005-03-05 2012-03-28 Innovation Engineering Llc ELECTRONICALLY VARIABLE CAPACITOR ARRAY
JP2012060104A (ja) * 2010-08-11 2012-03-22 Toshiba Corp 電源制御装置、プラズマ処理装置、及びプラズマ処理方法
EP3048741B1 (en) * 2013-10-25 2018-09-12 Huawei Technologies Co., Ltd. Copper wire interface circuit
US9844127B2 (en) 2014-01-10 2017-12-12 Reno Technologies, Inc. High voltage switching circuit
US10679824B2 (en) 2015-06-29 2020-06-09 Reno Technologies, Inc. Capacitance variation
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US10340879B2 (en) 2015-02-18 2019-07-02 Reno Technologies, Inc. Switching circuit
US10984986B2 (en) * 2015-06-29 2021-04-20 Reno Technologies, Inc. Impedance matching network and method
US10692699B2 (en) 2015-06-29 2020-06-23 Reno Technologies, Inc. Impedance matching with restricted capacitor switching
US10229816B2 (en) * 2016-05-24 2019-03-12 Mks Instruments, Inc. Solid-state impedance matching systems including a hybrid tuning network with a switchable coarse tuning network and a varactor fine tuning network
US10148231B2 (en) * 2016-06-14 2018-12-04 Analogic Corporation RF power amplifier with dynamic impedance matching through discrete presets and/or a variable power supply
US20180175819A1 (en) * 2016-12-16 2018-06-21 Lam Research Corporation Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor
US11521833B2 (en) 2017-07-10 2022-12-06 Reno Technologies, Inc. Combined RF generator and RF solid-state matching network
US12272522B2 (en) * 2017-07-10 2025-04-08 Asm America, Inc. Resonant filter for solid state RF impedance matching network
US10269540B1 (en) * 2018-01-25 2019-04-23 Advanced Energy Industries, Inc. Impedance matching system and method of operating the same
JP7211806B2 (ja) * 2018-12-26 2023-01-24 株式会社ダイヘン インピーダンス整合装置及びインピーダンス整合方法
JP7105184B2 (ja) * 2018-12-27 2022-07-22 株式会社ダイヘン インピーダンス整合装置及びインピーダンス整合方法
US12355418B2 (en) * 2021-11-01 2025-07-08 Advanced Energy Industries, Inc. Two stage pin diode driver with energy recovery
US12537483B2 (en) * 2022-11-15 2026-01-27 Nxp Usa, Inc. Amplifier device with low frequency resonance decoupling circuitry

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118740089A (zh) * 2024-07-09 2024-10-01 深圳捷迅通射频技术有限公司 一种射频匹配器、匹配方法、装置、设备及介质
WO2026054971A1 (en) * 2024-09-09 2026-03-12 Applied Materials, Inc. High bandgap switched shunt capacitor architecture

Also Published As

Publication number Publication date
TW202301466A (zh) 2023-01-01
US20240194449A1 (en) 2024-06-13
WO2022216649A1 (en) 2022-10-13
JP2024514551A (ja) 2024-04-02
TWI851988B (zh) 2024-08-11

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