TWI845754B - 計量系統及方法 - Google Patents

計量系統及方法 Download PDF

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Publication number
TWI845754B
TWI845754B TW109130575A TW109130575A TWI845754B TW I845754 B TWI845754 B TW I845754B TW 109130575 A TW109130575 A TW 109130575A TW 109130575 A TW109130575 A TW 109130575A TW I845754 B TWI845754 B TW I845754B
Authority
TW
Taiwan
Prior art keywords
illumination
symmetric
metrology
distribution
target
Prior art date
Application number
TW109130575A
Other languages
English (en)
Chinese (zh)
Other versions
TW202117275A (zh
Inventor
安卓 Ｖ 希爾
阿農 馬那森
Original Assignee
美商科磊股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商科磊股份有限公司 filed Critical 美商科磊股份有限公司
Publication of TW202117275A publication Critical patent/TW202117275A/zh
Application granted granted Critical
Publication of TWI845754B publication Critical patent/TWI845754B/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10141—Special mode during image acquisition
    • G06T2207/10152—Varying illumination
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW109130575A 2019-09-09 2020-09-07 計量系統及方法 TWI845754B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201962897548P 2019-09-09 2019-09-09
US62/897,548 2019-09-09
US202063036760P 2020-06-09 2020-06-09
US63/036,760 2020-06-09
US16/996,328 US11359916B2 (en) 2019-09-09 2020-08-18 Darkfield imaging of grating target structures for overlay measurement
US16/996,328 2020-08-18

Publications (2)

Publication Number Publication Date
TW202117275A TW202117275A (zh) 2021-05-01
TWI845754B true TWI845754B (zh) 2024-06-21

Family

ID=74850983

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109130575A TWI845754B (zh) 2019-09-09 2020-09-07 計量系統及方法

Country Status (7)

Country Link
US (1) US11359916B2 (https=)
EP (1) EP4025901A4 (https=)
JP (1) JP7451687B2 (https=)
KR (2) KR20220054877A (https=)
CN (1) CN114341594B (https=)
TW (1) TWI845754B (https=)
WO (1) WO2021050305A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11309202B2 (en) * 2020-01-30 2022-04-19 Kla Corporation Overlay metrology on bonded wafers
US11526086B2 (en) 2021-03-08 2022-12-13 Kla Corporation Multi-field scanning overlay metrology
DE102021205328B3 (de) 2021-05-26 2022-09-29 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Abbildungsqualität eines optischen Systems bei Beleuchtung mit Beleuchtungslicht innerhalb einer zu vermessenden Pupille und Metrologiesystem dafür
US11688717B2 (en) * 2021-08-26 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanical wafer alignment detection for bonding process
US12032300B2 (en) * 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12253805B2 (en) 2022-08-11 2025-03-18 Kla Corporation Scatterometry overlay metrology with orthogonal fine-pitch segmentation
TW202530674A (zh) * 2023-09-01 2025-08-01 美商應用材料股份有限公司 用於混合式接合缺陷偵測之多向照明
US12506038B2 (en) * 2024-01-11 2025-12-23 Tokyo Electron Limited Wafer bonding overlay measurement system
US12529878B2 (en) * 2024-03-26 2026-01-20 Kla Corporation High contrast imaging in bonded sample metrology using oblique illumination
US20250306477A1 (en) * 2024-03-27 2025-10-02 Kla Corporation Single grab pupil landscape via outside the objective lens broadband illumination

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130278942A1 (en) * 2012-04-24 2013-10-24 Nanometrics Incorporated Dark field diffraction based overlay
US20170184977A1 (en) * 2015-12-23 2017-06-29 Asml Netherlands B.V. Metrology method, target and substrate
TW201734435A (zh) * 2015-12-31 2017-10-01 Asml控股公司 用於在檢測系統中聚焦的方法及裝置
TW201741646A (zh) * 2016-04-25 2017-12-01 佳能股份有限公司 測量裝置、壓印設備、製造產品的方法、光量確定方法及光量調整方法

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US7528953B2 (en) * 2005-03-01 2009-05-05 Kla-Tencor Technologies Corp. Target acquisition and overlay metrology based on two diffracted orders imaging
NL1036245A1 (nl) * 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
US8681413B2 (en) * 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
WO2015124397A1 (en) 2014-02-21 2015-08-27 Asml Netherlands B.V. Optimization of target arrangement and associated target
WO2016005167A1 (en) * 2014-07-09 2016-01-14 Asml Netherlands B.V. Inspection apparatus, inspection method and device manufacturing method
CN107111245B (zh) * 2014-12-19 2019-10-18 Asml荷兰有限公司 测量非对称性的方法、检查设备、光刻系统及器件制造方法
CN106611756A (zh) * 2015-10-26 2017-05-03 联华电子股份有限公司 晶片对晶片对接结构及其制作方法
US10048132B2 (en) * 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
EP3422103A1 (en) 2017-06-26 2019-01-02 ASML Netherlands B.V. Method of determining a performance parameter of a process
US10663633B2 (en) 2017-06-29 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Aperture design and methods thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130278942A1 (en) * 2012-04-24 2013-10-24 Nanometrics Incorporated Dark field diffraction based overlay
US20170184977A1 (en) * 2015-12-23 2017-06-29 Asml Netherlands B.V. Metrology method, target and substrate
TW201734435A (zh) * 2015-12-31 2017-10-01 Asml控股公司 用於在檢測系統中聚焦的方法及裝置
TW201741646A (zh) * 2016-04-25 2017-12-01 佳能股份有限公司 測量裝置、壓印設備、製造產品的方法、光量確定方法及光量調整方法

Also Published As

Publication number Publication date
KR20240097962A (ko) 2024-06-27
EP4025901A1 (en) 2022-07-13
WO2021050305A1 (en) 2021-03-18
KR20220054877A (ko) 2022-05-03
TW202117275A (zh) 2021-05-01
US11359916B2 (en) 2022-06-14
JP7451687B2 (ja) 2024-03-18
JP2022546849A (ja) 2022-11-09
EP4025901A4 (en) 2023-10-04
US20210072021A1 (en) 2021-03-11
CN114341594A (zh) 2022-04-12
CN114341594B (zh) 2023-07-14

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