CN114341594B - 用于叠对测量的光栅目标结构的暗场成像 - Google Patents

用于叠对测量的光栅目标结构的暗场成像 Download PDF

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Publication number
CN114341594B
CN114341594B CN202080061806.5A CN202080061806A CN114341594B CN 114341594 B CN114341594 B CN 114341594B CN 202080061806 A CN202080061806 A CN 202080061806A CN 114341594 B CN114341594 B CN 114341594B
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China
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illumination
symmetric
metrology
layer
target
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CN202080061806.5A
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Chinese (zh)
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CN114341594A (zh
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A·希尔
A·玛纳森
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10141—Special mode during image acquisition
    • G06T2207/10152—Varying illumination
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN202080061806.5A 2019-09-09 2020-08-31 用于叠对测量的光栅目标结构的暗场成像 Active CN114341594B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201962897548P 2019-09-09 2019-09-09
US62/897,548 2019-09-09
US202063036760P 2020-06-09 2020-06-09
US63/036,760 2020-06-09
US16/996,328 US11359916B2 (en) 2019-09-09 2020-08-18 Darkfield imaging of grating target structures for overlay measurement
US16/996,328 2020-08-18
PCT/US2020/048668 WO2021050305A1 (en) 2019-09-09 2020-08-31 Darkfield imaging of grating target structures for overlay measurement

Publications (2)

Publication Number Publication Date
CN114341594A CN114341594A (zh) 2022-04-12
CN114341594B true CN114341594B (zh) 2023-07-14

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CN202080061806.5A Active CN114341594B (zh) 2019-09-09 2020-08-31 用于叠对测量的光栅目标结构的暗场成像

Country Status (7)

Country Link
US (1) US11359916B2 (https=)
EP (1) EP4025901A4 (https=)
JP (1) JP7451687B2 (https=)
KR (2) KR20220054877A (https=)
CN (1) CN114341594B (https=)
TW (1) TWI845754B (https=)
WO (1) WO2021050305A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11309202B2 (en) * 2020-01-30 2022-04-19 Kla Corporation Overlay metrology on bonded wafers
US11526086B2 (en) 2021-03-08 2022-12-13 Kla Corporation Multi-field scanning overlay metrology
DE102021205328B3 (de) 2021-05-26 2022-09-29 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Abbildungsqualität eines optischen Systems bei Beleuchtung mit Beleuchtungslicht innerhalb einer zu vermessenden Pupille und Metrologiesystem dafür
US11688717B2 (en) * 2021-08-26 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanical wafer alignment detection for bonding process
US12032300B2 (en) * 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12253805B2 (en) 2022-08-11 2025-03-18 Kla Corporation Scatterometry overlay metrology with orthogonal fine-pitch segmentation
TW202530674A (zh) * 2023-09-01 2025-08-01 美商應用材料股份有限公司 用於混合式接合缺陷偵測之多向照明
US12506038B2 (en) * 2024-01-11 2025-12-23 Tokyo Electron Limited Wafer bonding overlay measurement system
US12529878B2 (en) * 2024-03-26 2026-01-20 Kla Corporation High contrast imaging in bonded sample metrology using oblique illumination
US20250306477A1 (en) * 2024-03-27 2025-10-02 Kla Corporation Single grab pupil landscape via outside the objective lens broadband illumination

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7528953B2 (en) * 2005-03-01 2009-05-05 Kla-Tencor Technologies Corp. Target acquisition and overlay metrology based on two diffracted orders imaging
NL1036245A1 (nl) * 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
US8681413B2 (en) * 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
US8817273B2 (en) 2012-04-24 2014-08-26 Nanometrics Incorporated Dark field diffraction based overlay
WO2015124397A1 (en) 2014-02-21 2015-08-27 Asml Netherlands B.V. Optimization of target arrangement and associated target
WO2016005167A1 (en) * 2014-07-09 2016-01-14 Asml Netherlands B.V. Inspection apparatus, inspection method and device manufacturing method
CN107111245B (zh) * 2014-12-19 2019-10-18 Asml荷兰有限公司 测量非对称性的方法、检查设备、光刻系统及器件制造方法
CN106611756A (zh) * 2015-10-26 2017-05-03 联华电子股份有限公司 晶片对晶片对接结构及其制作方法
KR20180095932A (ko) 2015-12-23 2018-08-28 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치
WO2017114641A1 (en) * 2015-12-31 2017-07-06 Asml Holding N.V. Method and device for focusing in an inspection system
JP6685821B2 (ja) * 2016-04-25 2020-04-22 キヤノン株式会社 計測装置、インプリント装置、物品の製造方法、光量決定方法、及び、光量調整方法
US10048132B2 (en) * 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
EP3422103A1 (en) 2017-06-26 2019-01-02 ASML Netherlands B.V. Method of determining a performance parameter of a process
US10663633B2 (en) 2017-06-29 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Aperture design and methods thereof

Also Published As

Publication number Publication date
KR20240097962A (ko) 2024-06-27
EP4025901A1 (en) 2022-07-13
WO2021050305A1 (en) 2021-03-18
KR20220054877A (ko) 2022-05-03
TW202117275A (zh) 2021-05-01
US11359916B2 (en) 2022-06-14
JP7451687B2 (ja) 2024-03-18
JP2022546849A (ja) 2022-11-09
EP4025901A4 (en) 2023-10-04
US20210072021A1 (en) 2021-03-11
CN114341594A (zh) 2022-04-12
TWI845754B (zh) 2024-06-21

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