TWI843804B - Confirmation method - Google Patents
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- TWI843804B TWI843804B TW109104072A TW109104072A TWI843804B TW I843804 B TWI843804 B TW I843804B TW 109104072 A TW109104072 A TW 109104072A TW 109104072 A TW109104072 A TW 109104072A TW I843804 B TWI843804 B TW I843804B
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- 238000012790 confirmation Methods 0.000 title claims description 87
- 238000000034 method Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000011888 foil Substances 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 230000001678 irradiating effect Effects 0.000 claims abstract description 12
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000005856 abnormality Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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Abstract
[課題]容易地確認因雷射光束的照射所造成之對被加工物的正面的影響。 [解決手段]在確認用晶圓的金屬箔形成2條線形加工痕跡,並藉由對該中間的基準位置照射雷射光束而形成改質層。雖然形成於基材的內部之改質層難以目視辨識,但是因為是將線形加工痕跡明確地形成在金屬箔的正面,所以可容易地目視辨識。從而,可以依據線形加工痕跡,掌握改質層的位置(亦即改質層的形成時的雷射光束的照射位置)。因此,因為使用者可以取得雷射光束的照射位置、與到達基材的正面之因雷射光束而形成之表面損傷的位置關係,所以可以容易地確認由雷射光束的照射所造成之對被加工物的正面之影響。[Topic] Easily confirm the impact of laser beam irradiation on the front surface of the workpiece. [Solution] Two linear processing marks are formed on the metal foil of the wafer, and a modified layer is formed by irradiating the laser beam to the reference position in the middle. Although the modified layer formed inside the substrate is difficult to visually identify, it can be easily visually identified because the linear processing marks are clearly formed on the front surface of the metal foil. Therefore, the position of the modified layer (that is, the irradiation position of the laser beam when the modified layer is formed) can be grasped based on the linear processing marks. Therefore, because the user can obtain the relationship between the irradiation position of the laser beam and the position of the surface damage formed by the laser beam that reaches the front surface of the substrate, it is easy to confirm the impact of the laser beam irradiation on the front surface of the workpiece.
Description
本發明是有關於一種確認因對被加工物的背面之雷射光束的照射所造成的對被加工物的正面之影響的確認方法。The present invention relates to a method for confirming the influence of the laser beam irradiating the back side of the workpiece on the front side of the workpiece.
用於晶片形成之被加工物,是例如在藉由形成於其正面之交叉的複數條切割道(分割預定線)所區隔出的各區域中分別具有元件。可藉由沿著切割道將被加工物斷開而形成晶片。因此,有從被加工物的背面沿著切割道照射雷射光束,而在被加工物的內部形成沿著切割道的改質層的方法。The workpiece used for chip formation has components in each area separated by a plurality of intersecting scribe lines (predetermined dividing lines) formed on the front surface. The chip can be formed by cutting the workpiece along the scribe lines. Therefore, there is a method of irradiating a laser beam along the scribe lines from the back of the workpiece to form a modified layer along the scribe lines inside the workpiece.
在此方法中,有因來自背面之雷射光束的照射,而使正面的元件受到影響之情形。因此,所要求的是確認這種影響之有無或程度。例如,專利文獻1中已揭示有用於確認這種雷射光束的影響的確認用晶圓。藉由對此確認用晶圓從背面照射雷射光束來形成改質層,可以檢測在確認用晶圓之正面所產生的損傷(以下稱為表面損傷)。藉此,可以確認雷射光束對被加工物的正面的影響,而選定適當的加工條件、以及檢測加工裝置的異常。 先前技術文獻 專利文獻In this method, there is a situation where the front element is affected by the irradiation of the laser beam from the back. Therefore, what is required is to confirm the presence or extent of such an influence. For example, Patent Document 1 discloses a confirmation wafer useful for confirming the influence of such a laser beam. By irradiating the confirmation wafer with a laser beam from the back to form a modified layer, damage (hereinafter referred to as surface damage) generated on the front side of the confirmation wafer can be detected. In this way, the influence of the laser beam on the front side of the workpiece can be confirmed, and appropriate processing conditions can be selected, as well as abnormalities of the processing equipment can be detected. Prior Art Documents Patent Documents
專利文獻1:日本專利特開2017-37912號公報Patent document 1: Japanese Patent Publication No. 2017-37912
發明欲解決之課題Invention Problems to be Solved
在改質層的形成時,在雷射光束之照射位置的正後方即切割道內產生表面損傷之情形,因為在切割道並未形成有元件,所以不成問題。於是,重要的是得知在離雷射光束的照射位置多遠的位置產生表面損傷。When the modified layer is formed, surface damage occurs in the scribe line just behind the irradiation position of the laser beam. This is not a problem because no components are formed in the scribe line. Therefore, it is important to know how far away from the irradiation position of the laser beam the surface damage occurs.
但是,因為在專利文獻1之確認用晶圓上並未形成有切割道,所以從其外觀判別雷射光束的照射位置是困難的。又,也可考慮從改質層判別雷射光束的照射位置之作法。但是,因為改質層是形成在確認用晶圓的內部,所以難以從外觀判別。像這樣,在專利文獻1的確認用晶圓上會有以下問題:難以掌握正確的雷射光束的照射位置。However, since there is no dicing road formed on the confirmation wafer of Patent Document 1, it is difficult to judge the irradiation position of the laser beam from its appearance. Alternatively, it is also possible to judge the irradiation position of the laser beam from the modified layer. However, since the modified layer is formed inside the confirmation wafer, it is difficult to judge from the appearance. As such, the confirmation wafer of Patent Document 1 has the following problem: it is difficult to grasp the correct irradiation position of the laser beam.
據此,本發明之目的在於提供一種在對不具有切割道之確認用晶圓從背面照射用於形成改質層之雷射光束時,可以判別雷射光束的照射位置,而容易地確認由雷射光束的照射所造成之對被加工物的正面的影響之確認方法。 用以解決課題之手段Accordingly, the purpose of the present invention is to provide a method for easily confirming the effect of the laser beam irradiation on the front of the workpiece when the laser beam used to form a modified layer is irradiated from the back of a confirmation wafer without a cutting path, by which the irradiation position of the laser beam can be determined. Means for solving the problem
根據本發明,可提供一種確認方法,是確認藉由雷射加工裝置從被加工物的背面側照射對被加工物具有穿透性之波長的雷射光束,而在被加工物的內部形成改質層之時的因雷射光束的照射所造成之對被加工物的正面的影響,前述確認方法具備有以下步驟: 確認用晶圓準備步驟,準備在基材的正面積層有金屬箔之確認用晶圓; 改質層形成步驟,在已將聚光點定位在該確認用晶圓的該基材的內部的狀態下,從該基材的背面側照射對該基材具有穿透性之波長的雷射光束,並且使該聚光點與該確認用晶圓在加工進給方向上相對移動,而在該基材的內部形成改質層; 線形加工痕跡形成步驟,在正交於該加工進給方向的分度進給方向上,在距離該改質層形成步驟中的雷射光束的照射位置預定之距離的位置上,以將聚光點定位在該確認用晶圓的該基材與該金屬箔之界面的狀態,從該基材的背面側照射對該基材具有穿透性之波長的雷射光束,並且使該聚光點與該確認用晶圓在該加工進給方向上相對移動,而在該金屬箔的正面形成線形加工痕跡;及 確認步驟,在實施該改質層形成步驟及該線形加工痕跡形成步驟之後,基於該線形加工痕跡的位置,來確認因在該改質層形成步驟中照射的該雷射光束所造成之對該金屬箔的正面的影響。According to the present invention, a confirmation method can be provided, which is to confirm the influence of the laser beam irradiation on the front side of the processed object when a modified layer is formed inside the processed object by irradiating a laser beam with a wavelength that is penetrating to the processed object from the back side of the processed object by a laser processing device. The above-mentioned confirmation method has the following steps: Confirmation wafer preparation step, preparing a confirmation wafer with a metal foil stacked on the front side of the substrate; Modified layer formation step, in a state where the focal point has been positioned inside the substrate of the confirmation wafer, irradiating a laser beam with a wavelength that is penetrating to the substrate from the back side of the substrate, and causing the focal point and the confirmation wafer to move relative to each other in the processing feed direction, thereby forming a modified layer inside the substrate; a linear processing mark forming step, in which a laser beam having a wavelength penetrating the substrate is irradiated from the back side of the substrate in a state where the focal point is positioned at the interface between the substrate and the metal foil of the confirmation wafer in a predetermined distance from the irradiation position of the laser beam in the modified layer forming step in a direction of indexing orthogonal to the processing feed direction, and the focal point and the confirmation wafer are relatively moved in the processing feed direction to form a linear processing mark on the front side of the metal foil; and a confirmation step, after the modified layer forming step and the linear processing mark forming step are performed, based on the position of the linear processing mark, confirming the influence of the laser beam irradiated in the modified layer forming step on the front side of the metal foil.
較佳的是,該改質層形成步驟是在實施該線形加工痕跡形成步驟之後實施。Preferably, the modified layer forming step is performed after the linear processing mark forming step is performed.
較佳的是,本確認方法更具備有基準位置設定步驟,前述基準位置設定步驟是在實施該確認用晶圓準備步驟後,將該確認用晶圓中的要形成該改質層的位置設定作為基準位置。較佳的是,在該改質層形成步驟中,是對該基準位置照射雷射光束,在該線形加工痕跡形成步驟中,是對自該基準位置朝該分度進給方向分開了相當於該預定之距離的位置照射雷射光束。 發明效果Preferably, the confirmation method further includes a reference position setting step, wherein the position in the confirmation wafer where the modified layer is to be formed is set as the reference position after the confirmation wafer preparation step. Preferably, in the modified layer forming step, the reference position is irradiated with a laser beam, and in the linear processing mark forming step, the position separated from the reference position in the indexing feed direction by a distance equal to the predetermined distance is irradiated with a laser beam. Effect of the invention
根據本發明,雖然形成於確認用晶圓之基材的內部的改質層難以目視辨識,但是因為當藉由雷射光束加工金屬箔之背面時,會讓金屬箔在金屬箔之厚度方向上熔融而在正面側也變色並作為線形加工痕跡而出現在正面側,所以可以讓使用者容易地目視辨識。According to the present invention, although the modified layer formed inside the substrate of the confirmation wafer is difficult to visually identify, when the back side of the metal foil is processed by the laser beam, the metal foil is melted in the thickness direction of the metal foil and the front side is also discolored and appears as a linear processing mark on the front side, so the user can easily visually identify it.
從而,使用者可以依據線形加工痕跡而容易地從確認用晶圓的外觀來掌握改質層的位置(亦即改質層的形成時的雷射光束的照射位置)。因此,因為使用者可以取得在改質層的形成時的雷射光束之照射位置、與雷射光束當中對改質層的形成沒有貢獻的一部分藉由直接到達基材的正面側、或在改質層或形成於改質層周邊的裂隙上反射、散射、折射等而形成於金屬箔之表面損傷的位置關係,所以可以適當地確認表面損傷的產生狀況(亦即雷射光束對基材的正面之影響)。其結果,使用者可以容易地確認因雷射光束的照射所造成之對被加工物的正面的影響。因此,使用者可做到例如選定雷射加工裝置中的恰當的加工條件、以及檢測雷射加工裝置的異常。Therefore, the user can easily grasp the position of the modified layer (i.e., the irradiation position of the laser beam when the modified layer is formed) from the appearance of the confirmation wafer based on the linear processing trace. Therefore, since the user can obtain the irradiation position of the laser beam when the modified layer is formed, and the positional relationship between the portion of the laser beam that does not contribute to the formation of the modified layer directly reaching the front side of the substrate, or reflecting, scattering, refracting, etc. on the cracks formed on the modified layer or the modified layer, the user can appropriately confirm the generation of surface damage (i.e., the influence of the laser beam on the front side of the substrate). As a result, the user can easily confirm the influence on the front side of the processed object caused by the irradiation of the laser beam. Therefore, the user can, for example, select appropriate processing conditions in the laser processing device and detect abnormalities in the laser processing device.
較佳的是,在本確認方法中,是在改質層形成步驟之前實施線形加工痕跡形成步驟。有關於此,依據改質層的形成位置與線形加工痕跡的形成位置之關係,若先形成改質層時,恐有用於形成線形加工痕跡的雷射光束的照射因改質層而受到妨礙之虞。可以藉由先實施線形加工痕跡形成步驟,而防止這樣的事態。Preferably, in the present confirmation method, the linear processing mark forming step is performed before the modified layer forming step. In this regard, due to the relationship between the formation position of the modified layer and the formation position of the linear processing mark, if the modified layer is formed first, there is a risk that the irradiation of the laser beam used to form the linear processing mark will be hindered by the modified layer. Such a situation can be prevented by performing the linear processing mark forming step first.
較佳的是,在本確認方法中,是在線形加工痕跡形成步驟之前實施上述之基準位置設定步驟。藉此,可以將改質層的形成位置設定為基準位置,並依據基準位置來形成線形加工痕跡與改質層。藉此,適當地設定線形加工痕跡與改質層的位置關係即變得較容易。Preferably, in the present confirmation method, the above-mentioned reference position setting step is performed before the linear processing mark forming step. Thus, the formation position of the modified layer can be set as the reference position, and the linear processing mark and the modified layer are formed according to the reference position. Thus, it becomes easier to appropriately set the positional relationship between the linear processing mark and the modified layer.
本發明之一實施形態的確認方法(本確認方法)是藉由雷射加工裝置從被加工物的背面側照射對被加工物具有穿透性之波長的雷射光束,並確認在被加工物的內部形成改質層時之因雷射光束的照射所造成之對被加工物的正面的影響之確認方法。 以下,說明本確認方法之步驟。A confirmation method of one embodiment of the present invention (this confirmation method) is a confirmation method for confirming the effect of the laser beam irradiation on the front side of the workpiece when a modified layer is formed inside the workpiece by irradiating a laser beam of a wavelength that is penetrating to the workpiece from the back side of the workpiece using a laser processing device. The steps of this confirmation method are described below.
(1)確認用晶圓準備步驟 在本確認方法中,是使用與實際上用於製造製品(晶片)之被加工物不同的確認用晶圓,來確認因雷射光束之照射所造成之對被加工物的正面的影響。(1) Confirmation wafer preparation step In this confirmation method, a confirmation wafer different from the workpiece actually used to manufacture the product (chip) is used to confirm the effect of the laser beam irradiation on the front surface of the workpiece.
如圖1及圖2所示,確認用晶圓1具有形成為圓板狀之基材2、以及設置於基材2之正面的金屬箔5。如圖2所示,基材2具備有正面3及背面4。於基材2之正面3形成有金屬箔5。於基材2的外周緣設有顯示確認用晶圓1之結晶方位的凹口9。亦可於基材2的外周緣施行有倒角加工(參照圖6)。As shown in FIG. 1 and FIG. 2, the confirmation wafer 1 has a substrate 2 formed in a disk shape and a metal foil 5 provided on the front surface of the substrate 2. As shown in FIG. 2, the substrate 2 has a front surface 3 and a back surface 4. The metal foil 5 is formed on the front surface 3 of the substrate 2. A notch 9 showing the crystal orientation of the confirmation wafer 1 is provided on the outer periphery of the substrate 2. Chamfering may also be performed on the outer periphery of the substrate 2 (see FIG. 6).
在確認用晶圓準備步驟中,是藉由例如將圓形的原切片晶圓(as-sliced wafer)在去除包含翹曲及膨脹的變形要素後磨削及研磨成預定之厚度,並在外周緣形成凹口9,而獲得基材2。此外,藉由例如蒸鍍來將金屬箔5積層於基材2之正面3上。藉此,準備確認用晶圓1。In the confirmation wafer preparation step, a circular as-sliced wafer is ground and polished to a predetermined thickness after removing deformation elements including warping and expansion, and a notch 9 is formed on the outer periphery to obtain a substrate 2. In addition, a metal foil 5 is deposited on the front surface 3 of the substrate 2 by, for example, evaporation. In this way, a confirmation wafer 1 is prepared.
再者,基材2的材料宜為矽等之和實際上用於製造製品之被加工物同質的材料。金屬箔5是藉由例如成將錫成膜而形成的錫膜,其厚度宜為數百nm左右。Furthermore, the material of the substrate 2 is preferably a material of the same quality as the workpiece actually used to manufacture the product, such as silicon. The metal foil 5 is a tin film formed by, for example, tin film formation, and its thickness is preferably about several hundred nanometers.
(2)基準位置設定步驟、線形加工痕跡形成步驟及改質層形成步驟 接著,實施基準位置設定步驟、線形加工痕跡形成步驟及改質層形成步驟,前述基準位置設定步驟是在確認用晶圓1設定基準位置,前述線形加工痕跡形成步驟是在金屬箔5的正面形成線形加工痕跡,前述改質層形成步驟是在基材2的內部形成改質層。首先,說明用於這些步驟的雷射加工裝置的構成。(2) Reference position setting step, linear processing mark forming step, and modified layer forming step Next, the reference position setting step, linear processing mark forming step, and modified layer forming step are performed. The reference position setting step is to set the reference position of the confirmation wafer 1, the linear processing mark forming step is to form a linear processing mark on the front surface of the metal foil 5, and the modified layer forming step is to form a modified layer inside the substrate 2. First, the structure of the laser processing device used for these steps is described.
如圖3所示,雷射加工裝置10具備有長方體形的基台11、豎立設置於基台11之一端的立壁部13、及控制雷射加工裝置10的各構件的控制組件51。As shown in FIG. 3 , the laser processing device 10 includes a rectangular parallelepiped base 11 , a vertical wall portion 13 vertically provided at one end of the base 11 , and a control unit 51 for controlling the components of the laser processing device 10 .
在基台11的上表面設置有使保持工作台43移動的保持工作台移動機構14。保持工作台移動機構14具備有:具備有保持工作台43的保持工作台部40、使保持工作台43在分度進給方向(Y軸方向)上移動的分度進給部20、及使保持工作台43在加工進給方向(X軸方向)上移動的加工進給部30。A holding table moving mechanism 14 for moving the holding table 43 is provided on the upper surface of the base 11. The holding table moving mechanism 14 includes a holding table portion 40 having the holding table 43, an indexing feed portion 20 for moving the holding table 43 in an indexing feed direction (Y-axis direction), and a processing feed portion 30 for moving the holding table 43 in a processing feed direction (X-axis direction).
分度進給部20包含有在Y軸方向上延伸的一對導軌23、載置於導軌23的Y軸工作台24、與導軌23平行地延伸的滾珠螺桿25、以及使滾珠螺桿25旋轉的驅動馬達26。The indexing feed section 20 includes a pair of guide rails 23 extending in the Y-axis direction, a Y-axis table 24 mounted on the guide rails 23 , a ball screw 25 extending parallel to the guide rails 23 , and a drive motor 26 for rotating the ball screw 25 .
一對導軌23是平行於Y軸方向地配置在基台11的上表面。Y軸工作台24是在一對導軌23上沿著這些導軌23可滑動地設置。於Y軸工作台24上載置有加工進給部30及保持工作台部40。A pair of guide rails 23 are arranged on the upper surface of the base 11 in parallel with the Y-axis direction. The Y-axis table 24 is slidably provided on the pair of guide rails 23 along the guide rails 23. A processing feed unit 30 and a holding table unit 40 are mounted on the Y-axis table 24.
滾珠螺桿25是螺合於設置在Y軸工作台24的下表面側的螺帽部(未圖示)。驅動馬達26是連結於滾珠螺桿25的一端部,並旋轉驅動滾珠螺桿25。藉由旋轉驅動滾珠螺桿25,而使Y軸工作台24、加工進給部30及保持工作台部40沿著導軌23在分度進給方向(Y軸方向)上移動。The ball screw 25 is screwed into a nut portion (not shown) provided on the lower surface side of the Y-axis table 24. The driving motor 26 is connected to one end of the ball screw 25 and rotationally drives the ball screw 25. By rotationally driving the ball screw 25, the Y-axis table 24, the processing feed portion 30, and the holding table portion 40 are moved along the guide rail 23 in the indexing feed direction (Y-axis direction).
加工進給部30具備有在X軸方向上延伸的一對導軌31、載置於導軌31上的X軸工作台32、和導軌31平行地延伸的滾珠螺桿33、以及使滾珠螺桿33旋轉的驅動馬達35。一對導軌31是平行於X軸方向地配置在Y軸工作台24的上表面。X軸工作台32是在一對導軌31上沿著這些導軌31可滑動地設置。於X軸工作台32上載置有保持工作台部40。The processing feed section 30 includes a pair of guide rails 31 extending in the X-axis direction, an X-axis table 32 mounted on the guide rails 31, a ball screw 33 extending parallel to the guide rails 31, and a drive motor 35 for rotating the ball screw 33. The pair of guide rails 31 are arranged on the upper surface of the Y-axis table 24 in parallel to the X-axis direction. The X-axis table 32 is slidably provided on the pair of guide rails 31 along the guide rails 31. A holding table section 40 is mounted on the X-axis table 32.
滾珠螺桿33是螺合於設置在X軸工作台32的下表面側的螺帽部(未圖示)。驅動馬達35是連結於滾珠螺桿33的一端部,並旋轉驅動滾珠螺桿33。藉由旋轉驅動滾珠螺桿33,而使X軸工作台32及保持工作台部40沿著導軌31在加工進給方向(X軸方向)上移動。The ball screw 33 is screwed into a nut portion (not shown) provided on the lower surface side of the X-axis table 32. The drive motor 35 is connected to one end of the ball screw 33 and rotationally drives the ball screw 33. By rotationally driving the ball screw 33, the X-axis table 32 and the holding table portion 40 are moved along the guide rail 31 in the processing feed direction (X-axis direction).
保持工作台部40具有保持工作台43、4個夾具部45及θ工作台47,前述保持工作台43是吸引保持確認用晶圓1或被加工物,前述4個夾具部45是設置在保持工作台43的周圍,前述θ工作台47是支撐保持工作台43。θ工作台47是以可在XY平面內旋轉的方式設置於X軸工作台32的上表面。保持工作台43是形成為圓板狀,並設置於θ工作台47上。The holding table section 40 includes a holding table 43, four clamping parts 45, and a θ table 47. The holding table 43 attracts and holds the wafer 1 for confirmation or the workpiece, the four clamping parts 45 are arranged around the holding table 43, and the θ table 47 supports the holding table 43. The θ table 47 is arranged on the upper surface of the X-axis table 32 in a manner that allows rotation within the XY plane. The holding table 43 is formed in a circular plate shape and is arranged on the θ table 47.
在保持工作台43的上表面,形成有包含多孔陶瓷(porous ceramics)材的保持面。此保持面是連通於吸引源(未圖示)。4個夾具部45是在保持工作台43已將具備有環狀框架的被加工物保持的情況下,從四方將環形框架挾持固定。A holding surface made of porous ceramics is formed on the upper surface of the holding table 43. This holding surface is connected to a suction source (not shown). When the holding table 43 holds the workpiece having the annular frame, the four clamping parts 45 clamp and fix the annular frame from four sides.
在保持工作台移動機構14的後方豎立設置的立壁部13的前表面,設置有用於對被加工物進行雷射加工的雷射加工單元12。雷射加工單元12具有對保持於保持工作台43之確認用晶圓1等照射雷射光束之加工頭18、以及支撐加工頭18之臂部17。A laser processing unit 12 for laser processing a workpiece is provided on the front surface of a vertical wall 13 provided behind the holding table moving mechanism 14. The laser processing unit 12 includes a processing head 18 for irradiating a confirmation wafer 1 or the like held on the holding table 43 with a laser beam, and an arm 17 for supporting the processing head 18.
在臂部17及加工頭18內設置有雷射加工單元12的光學系統。如圖4所示,加工頭18具備有產生雷射的振盪器53、以及將振盪器53所振盪產生之雷射光束聚光的聚光透鏡54。加工頭18是藉由聚光透鏡54將從振盪器53所輸出的雷射光束L聚光,並照射至已保持於保持工作台43之確認用晶圓1等。The optical system of the laser processing unit 12 is provided in the arm 17 and the processing head 18. As shown in FIG4 , the processing head 18 has an oscillator 53 for generating laser light and a focusing lens 54 for focusing the laser beam generated by the oscillation of the oscillator 53. The processing head 18 focuses the laser beam L output from the oscillator 53 through the focusing lens 54 and irradiates the laser beam L onto the confirmation wafer 1 held on the holding table 43.
從加工頭18射出的雷射光束L是例如脈衝雷射光束,並具有對確認用晶圓1具有穿透性之形式的波長。藉由使此雷射光束L聚光而得到的聚光點P,可配置在任意的高度(沿著Z軸方向的位置)上。The laser beam L emitted from the processing head 18 is, for example, a pulse laser beam, and has a wavelength that can penetrate the inspection wafer 1. The focal point P obtained by focusing the laser beam L can be arranged at an arbitrary height (position along the Z-axis direction).
控制組件51是統合控制雷射加工裝置10的各構成要件。控制組件51具備有執行各種處理之處理器。可對控制組件51輸入來自各種檢測器(未圖示)的檢測結果。The control unit 51 is a component that controls the laser processing device 10. The control unit 51 includes a processor that executes various processes. The control unit 51 can receive detection results from various detectors (not shown).
(2-1)基準位置設定步驟 接著,說明使用了此雷射加工裝置10之基準位置設定步驟。此步驟是在確認用晶圓準備步驟之後實施。(2-1) Reference position setting step Next, the reference position setting step using the laser processing device 10 is described. This step is performed after the wafer preparation step for confirmation.
在此步驟中,首先,使用者是將確認用晶圓1以讓圖2所示之基材2為露出的背面4成為向上的方式來載置於保持工作台43。因應於此,控制組件51是控制吸引源,而使確認用晶圓1的金屬箔5吸附保持於保持工作台43。In this step, first, the user places the confirmation wafer 1 on the holding table 43 so that the back surface 4 of the substrate 2 shown in FIG. 2 is exposed and faces upward. Accordingly, the control unit 51 controls the suction source to hold the metal foil 5 of the confirmation wafer 1 on the holding table 43 by suction.
之後,如圖5所示,控制組件51是將確認用晶圓1中的要形成改質層的位置設定為基準位置B。因為在確認用晶圓1中未形成有切割道也未形成有元件,所以可將基準位置B設定在任何地方,而變得不需要利用θ工作台47之確認用晶圓1的角度調整。5, the control unit 51 sets the position of the confirmation wafer 1 where the modified layer is to be formed as the reference position B. Since neither the dicing line nor the element is formed in the confirmation wafer 1, the reference position B can be set anywhere, and the angle adjustment of the confirmation wafer 1 using the θ stage 47 is not required.
例如,控制組件51是控制分度進給部20,而將保持有確認用晶圓1之保持工作台43的分度進給方向(Y軸方向)的位置設定於預先設定之第1位置。並且,此時之自加工頭18對確認用晶圓1的雷射光束L的照射位置即成為基準位置B。For example, the control unit 51 controls the indexing feed unit 20 to set the indexing feed direction (Y-axis direction) of the holding table 43 holding the confirmation wafer 1 to a preset first position. At this time, the irradiation position of the laser beam L from the processing head 18 to the confirmation wafer 1 becomes the reference position B.
(2-2)線形加工痕跡形成步驟 在此步驟中,是將雷射光束L定位到自基準位置B朝正交於加工進給方向之分度進給方向分開了相當於預定之距離的位置上。(2-2) Linear processing mark formation step In this step, the laser beam L is positioned at a position separated from the reference position B by a predetermined distance in the indexing feed direction orthogonal to the processing feed direction.
亦即,控制組件51是藉由控制分度進給部20來使保持有確認用晶圓1的保持工作台43移動,而將自加工頭18之對確認用晶圓1的雷射光束L的照射位置設定到自基準位置B朝分度進給方向中的+側(+Y軸方向)分開了相當於預定之偏移距離d(參照圖7)的位置。That is, the control component 51 controls the indexing feed part 20 to move the holding workbench 43 holding the confirmation wafer 1, and sets the irradiation position of the laser beam L of the self-processing head 18 on the confirmation wafer 1 to a position separated from the reference position B toward the + side (+Y axis direction) in the indexing feed direction by a predetermined offset distance d (see Figure 7).
在此狀態下,如圖6所示,控制組件51是控制加工頭18之光學系統,而將加工頭18之聚光點P的位置定位到確認用晶圓1中的基材2與金屬箔5的界面。然後,控制組件51是從加工頭18朝向確認用晶圓1從背面4側來照射雷射光束L,並且控制加工進給部30而使保持有確認用晶圓1的保持工作台43如箭頭A所示地沿著加工進給方向移動,以使加工頭18沿著加工進給方向相對於確認用晶圓1相對地移動。藉此,可藉由雷射光束加工金屬箔5的背面,而讓金屬箔在金屬箔5的厚度方向上熔融,並如圖7所示,在金屬箔5的正面中的基準位置B的+ Y軸方向側,形成藉由雷射光束L的照射而讓金屬箔5熔融之作為痕跡的第1線形加工痕跡M1。In this state, as shown in FIG6 , the control unit 51 controls the optical system of the processing head 18 to position the focal point P of the processing head 18 at the interface between the substrate 2 and the metal foil 5 in the confirmation wafer 1. Then, the control unit 51 irradiates the laser beam L from the processing head 18 toward the confirmation wafer 1 from the back side 4, and controls the processing feed unit 30 to move the holding table 43 holding the confirmation wafer 1 along the processing feed direction as shown by the arrow A, so that the processing head 18 moves relatively to the confirmation wafer 1 along the processing feed direction. Thus, the back side of the metal foil 5 can be processed by the laser beam so that the metal foil is melted in the thickness direction of the metal foil 5, and as shown in FIG. 7, a first linear processing mark M1 is formed as a mark where the metal foil 5 is melted by the irradiation of the laser beam L on the +Y axis direction side of the reference position B in the front side of the metal foil 5.
接著,控制組件51是將自加工頭18之對確認用晶圓1的雷射光束L的照射位置朝分度進給方向中的-側(-Y軸方向),設定到自基準位置B分開了相當於偏移距離d的位置,且與第1線形加工痕跡M1的形成時同樣地實施雷射光束L的照射及保持工作台43的加工進給。Next, the control component 51 sets the irradiation position of the laser beam L from the processing head 18 to the confirmation wafer 1 to a position separated from the reference position B by an offset distance d toward the - side (-Y-axis direction) in the indexing feed direction, and implements the irradiation of the laser beam L and maintains the processing feed of the workbench 43 in the same manner as when the first linear processing mark M1 is formed.
藉此,即可在金屬箔5的正面中的基準位置B的-Y軸方向側,形成第2線形加工痕跡M2。如此進行,可在線形加工痕跡形成步驟中,在基準位置B的兩側與基準位置B大致平行地形成2條線形加工痕跡M1及M2。線形加工痕跡M1及M2可以藉由雷射光束L的照射而在金屬箔5的厚度方向上熔融金屬箔5並使正面側變色,而從金屬箔5的正面側來確認。 再者,較佳的是,加工痕跡M1與加工痕跡M2的間隔是設為與實際上欲形成改質層之被加工物的切割道的寬度相同。藉此,可以一眼就掌握藉由雷射光束之照射而對被加工物之正面造成的影響的範圍是否落在切割道內。Thus, a second linear processing mark M2 can be formed on the -Y axis side of the reference position B in the front surface of the metal foil 5. In this way, two linear processing marks M1 and M2 can be formed on both sides of the reference position B and roughly parallel to the reference position B in the linear processing mark forming step. The linear processing marks M1 and M2 can be confirmed from the front surface of the metal foil 5 by melting the metal foil 5 in the thickness direction of the metal foil 5 and discoloring the front surface by irradiation with the laser beam L. Furthermore, it is preferred that the interval between the processing mark M1 and the processing mark M2 is set to be the same as the width of the cut path of the workpiece on which the modified layer is actually to be formed. Thus, it can be understood at a glance whether the range of the influence on the front surface of the workpiece caused by the irradiation of the laser beam falls within the cut path.
再者,線形加工痕跡形成步驟中的雷射光束L的波長是例如1064nm,輸出是例如0.2W,且加工進給部30的移動速度是例如500mm/秒。Furthermore, the wavelength of the laser beam L in the linear processing mark forming step is, for example, 1064 nm, the output is, for example, 0.2 W, and the moving speed of the processing feed part 30 is, for example, 500 mm/sec.
(2-3)改質層形成步驟 在此步驟中,控制組件51是沿著基準位置B在確認用晶圓1形成改質層。(2-3) Modified layer formation step In this step, the control unit 51 forms a modified layer on the wafer 1 along the reference position B.
亦即,控制組件51是控制分度進給部20來使保持有確認用晶圓1之保持工作台43移動,並將來自加工頭18之對確認用晶圓1的雷射光束L的照射位置設定於基準位置B。That is, the control unit 51 controls the indexing feed unit 20 to move the holding table 43 holding the confirmation wafer 1, and sets the irradiation position of the laser beam L from the processing head 18 to the confirmation wafer 1 at the reference position B.
在此狀態下,如圖8所示,控制組件51是控制加工頭18之光學系統,而將加工頭18之聚光點P的位置定位到確認用晶圓1中的基材2的內部。然後,控制組件51是將雷射光束L從加工頭18朝向確認用晶圓1而從背面4側來照射,並且控制加工進給部30而使保持工作台43如箭頭A所示地沿著加工進給方向移動,以使加工頭18沿著加工進給方向相對於確認用晶圓1相對地移動。In this state, as shown in FIG8 , the control unit 51 controls the optical system of the processing head 18 to position the focal point P of the processing head 18 inside the substrate 2 in the confirmation wafer 1. Then, the control unit 51 irradiates the laser beam L from the processing head 18 toward the confirmation wafer 1 from the back side 4, and controls the processing feed unit 30 to move the holding table 43 along the processing feed direction as shown by the arrow A, so that the processing head 18 moves relatively to the confirmation wafer 1 along the processing feed direction.
之後,控制組件51是改變加工頭18之聚光點P在基材2內部的高度,而同樣地實施雷射光束L的照射及保持工作台43的加工進給。Afterwards, the control component 51 changes the height of the focal point P of the processing head 18 inside the substrate 2, and similarly implements the irradiation of the laser beam L and maintains the processing feed of the workbench 43.
藉此,如圖9所示,可沿著圖7所示之基準位置B在基材2內形成改質層T。再者,改質層形成步驟中的雷射光束L的波長是例如1064nm,雷射光束L的輸出是例如1.5W,加工進給部30的移動速度是例如700mm/秒。9, a modified layer T can be formed in the substrate 2 along the reference position B shown in FIG7. In addition, the wavelength of the laser beam L in the modified layer forming step is, for example, 1064 nm, the output of the laser beam L is, for example, 1.5 W, and the moving speed of the processing feed unit 30 is, for example, 700 mm/sec.
(3)確認步驟 在此步驟中,是使用者基於線形加工痕跡M1及M2的位置,來確認在改質層形成步驟中因所照射的雷射光束L所造成之對金屬箔5的正面的影響。(3) Confirmation step In this step, the user confirms the influence of the laser beam L irradiated on the front surface of the metal foil 5 in the modified layer forming step based on the positions of the linear processing marks M1 and M2.
亦即,在改質層形成步驟中,是從基材2的背面4側將雷射光束L照射成將聚光點P定位在基材2的內部。此時,對改質層的形成沒有貢獻的雷射光束L的一部分有以下情形:直接到達基材2的正面3側、或者藉由在改質層或生成於改質層的周邊之裂隙來反射、散射、折射而到達基材2的正面3側。像這樣到達基材2的正面側之雷射光束,在實際上用於製造製品的被加工物上,會有對正面的元件帶來不良影響的可能性。並且,在確認用晶圓1中,像這樣到達基材2之正面側的雷射光束,是如圖9所示,於金屬箔5之正面留下表面損傷(雷射損傷)LD。在此步驟中,使用者是觀察這種表面損傷LD。在此確認步驟中,是將確認用晶圓1從保持工作台43取下,並從積層於基材2的正面之金屬箔5的正面側確認表面損傷LD。That is, in the modified layer formation step, the laser beam L is irradiated from the back side 4 of the substrate 2 so that the focal point P is positioned inside the substrate 2. At this time, a part of the laser beam L that does not contribute to the formation of the modified layer has the following situations: directly reaches the front side 3 of the substrate 2, or reaches the front side 3 of the substrate 2 by reflection, scattering, and refraction through cracks in the modified layer or generated around the modified layer. The laser beam that reaches the front side of the substrate 2 in this way may have an adverse effect on the front components when it is actually used for the workpiece to manufacture the product. In addition, in the confirmation wafer 1, the laser beam that reaches the front side of the substrate 2 in this way leaves surface damage (laser damage) LD on the front side of the metal foil 5 as shown in Figure 9. In this step, the user observes the surface damage LD. In this confirmation step, the confirmation wafer 1 is removed from the holding table 43, and the surface damage LD is confirmed from the front side of the metal foil 5 laminated on the front side of the substrate 2.
如以上,在本確認方法中,是藉由在線形加工痕跡形成步驟中,對自基準位置B分開了相當於預定的偏移距離的2個位置照射雷射光束L,而在確認用晶圓1的金屬箔5的正面形成有2條線形加工痕跡M1及M2。此外,藉由沿著基準位置B照射雷射光束L,而在2條線形加工痕跡M1及M2的中間形成有改質層T。As described above, in the present confirmation method, in the linear processing mark forming step, by irradiating the laser beam L to two positions separated by a predetermined offset distance from the reference position B, two linear processing marks M1 and M2 are formed on the front surface of the metal foil 5 of the confirmation wafer 1. In addition, by irradiating the laser beam L along the reference position B, a modified layer T is formed between the two linear processing marks M1 and M2.
在此,雖然形成於基材2內部之改質層T難以目視辨識,但是因為位於其兩側之線形加工痕跡M1及M2是在金屬箔5的正面作為金屬箔5之熔融痕跡而被明確形成,所以能夠讓使用者容易目視辨識。Here, although the modified layer T formed inside the substrate 2 is difficult to visually identify, the linear processing marks M1 and M2 located on both sides thereof are clearly formed on the front surface of the metal foil 5 as melting marks of the metal foil 5, so that the user can easily visually identify them.
從而,使用者能夠依據線形加工痕跡M1及M2,而從確認用晶圓1的外觀容易地掌握改質層T的位置,亦即改質層T的形成時的雷射光束L的照射位置。因此,因為使用者可以取得在改質層T的形成時的雷射光束L的照射位置、與已到達基材2的正面之因雷射光束而形成於金屬箔5之表面損傷LD的位置關係(距離等),所以可以適當地確認表面損傷LD之發生狀況,亦即漏光對基材2的正面3的影響。其結果,使用者可以容易地確認因雷射光束L的照射所造成之對被加工物的正面的影響。 因此,使用者可做到例如選定雷射加工裝置10中的適當的加工條件、以及檢測雷射加工裝置10的異常。在改質層形成步驟時於金屬箔5的正面確認出在一對線形加工痕跡M1、M2的外側形成有雷射損傷LD之情形時,是例如使改質層形成時的雷射光束L的輸出降低,對聚光點的位置、重複頻率、加工進給速度、脈衝寬度等進行變更等來合宜變更加工條件。另一方面,在複數個雷射損傷LD從一對線形加工痕跡M1、M2的中心,亦即從改質層的位置偏向其中一條線形加工痕跡側的情況下,是判斷為例如有光軸偏離的可能性,並對雷射加工裝置10的光學系統等進行檢查。Therefore, the user can easily grasp the position of the modified layer T, that is, the irradiation position of the laser beam L when the modified layer T is formed, from the appearance of the confirmation wafer 1 based on the linear processing marks M1 and M2. Therefore, since the user can obtain the irradiation position of the laser beam L when the modified layer T is formed and the position relationship (distance, etc.) of the surface damage LD formed on the metal foil 5 due to the laser beam that has reached the front surface of the substrate 2, the occurrence of the surface damage LD, that is, the influence of the light leakage on the front surface 3 of the substrate 2 can be properly confirmed. As a result, the user can easily confirm the influence on the front surface of the workpiece caused by the irradiation of the laser beam L. Therefore, the user can select appropriate processing conditions in the laser processing device 10 and detect abnormalities in the laser processing device 10, for example. When laser damage LD is confirmed to be formed on the outer side of a pair of linear processing marks M1 and M2 on the front side of the metal foil 5 during the modified layer formation step, the processing conditions are appropriately changed, for example, by reducing the output of the laser beam L during the modified layer formation, changing the position of the focal point, the repetition frequency, the processing feed speed, the pulse width, etc. On the other hand, when a plurality of laser damage LD deviates from the center of the pair of linear processing marks M1 and M2, that is, from the position of the modified layer to the side of one of the linear processing marks, it is judged that there is a possibility of optical axis deviation, for example, and the optical system of the laser processing device 10 is checked.
又,在本實施形態中,是在改質層形成步驟之前實施線形加工痕跡形成步驟。有關於此,依據改質層T的形成位置(基準位置B)及線形加工痕跡M1及M2的形成位置之關係,若先形成改質層T時,會有用於形成線形加工痕跡M1及M2的雷射光束L的照射因改質層T而受到妨礙之虞,但藉由如本實施形態地先實施線形加工痕跡形成步驟,可以防止這樣的事態。Furthermore, in the present embodiment, the linear processing mark forming step is performed before the modified layer forming step. In this regard, according to the relationship between the formation position (reference position B) of the modified layer T and the formation positions of the linear processing marks M1 and M2, if the modified layer T is formed first, there is a possibility that the irradiation of the laser beam L used to form the linear processing marks M1 and M2 is hindered by the modified layer T. However, by performing the linear processing mark forming step first as in the present embodiment, such a situation can be prevented.
又,在本實施形態中,在線形加工痕跡形成步驟之前,已實施基準位置設定步驟。藉此,可以將改質層T的形成預定位置設定為基準位置B,並依據基準位置B來形成線形加工痕跡M1及M2與改質層T。藉此,在線形加工痕跡M1及M2的中間形成改質層T即變得較容易。Furthermore, in the present embodiment, the reference position setting step is performed before the linear processing mark forming step. Thus, the predetermined position for forming the modified layer T can be set as the reference position B, and the linear processing marks M1 and M2 and the modified layer T can be formed based on the reference position B. Thus, it becomes easier to form the modified layer T in the middle of the linear processing marks M1 and M2.
再者,在本實施形態中,是在從基準位置B朝+Y軸方向及-Y軸方向錯開了相當於偏移距離d的位置上形成有2道(2條)線形加工痕跡M1及M2。此時,亦可藉由將加工進給部30從+X側朝-X側加工進給而形成第1線形加工痕跡M1,之後,藉由將保持工作台43朝-Y軸方向移動,並將加工進給部30從-X側朝+X側加工進給而形成第2線形加工痕跡M2。Furthermore, in the present embodiment, two (two) linear processing marks M1 and M2 are formed at positions offset by the offset distance d in the +Y axis direction and the -Y axis direction from the reference position B. At this time, the first linear processing mark M1 can be formed by processing and feeding the processing feed unit 30 from the +X side to the -X side, and then the second linear processing mark M2 can be formed by moving the holding table 43 in the -Y axis direction and processing and feeding the processing feed unit 30 from the -X side to the +X side.
或者,在將加工頭18構成為可以同時照射2條雷射光束L的情況下,亦可同時形成2條線形加工痕跡M1及M2。Alternatively, when the processing head 18 is configured to irradiate two laser beams L at the same time, two linear processing marks M1 and M2 can be formed at the same time.
又,如圖10所示,亦可僅在基準位置B的分度進給方向的一側形成1條線形加工痕跡M。在此構成中,可依據可目視辨識的線形加工痕跡M、及線形加工痕跡M與基準位置B的位置關係(偏移距離d),而從確認用晶圓1的外觀來掌握改質層T的形成時之雷射光束L的照射位置。10, a linear processing mark M may be formed only on one side of the indexing feed direction of the reference position B. In this configuration, the irradiation position of the laser beam L when the modified layer T is formed can be grasped from the appearance of the confirmation wafer 1 based on the visually recognizable linear processing mark M and the positional relationship (offset distance d) between the linear processing mark M and the reference position B.
在改質層形成步驟中,控制組件51毋須從確認用晶圓1的外周緣的一端涵蓋到另一端來照射雷射光束L。其中,較佳的是,形成與在線形加工痕跡形成步驟中所形成的2條線形加工痕跡M1及M2同等以下的長度的改質層T。In the modified layer forming step, the control unit 51 does not need to irradiate the laser beam L from one end to the other end of the outer periphery of the confirmation wafer 1. It is preferable to form a modified layer T having a length equal to or less than the length of the two linear processing marks M1 and M2 formed in the linear processing mark forming step.
在本實施形態中,雖然是在改質層形成步驟之前實施線形加工痕跡形成步驟,但是亦可在改質層形成步驟之後實施線形加工痕跡形成步驟。In the present embodiment, although the linear processing mark forming step is performed before the modified layer forming step, the linear processing mark forming step may be performed after the modified layer forming step.
又,在本實施形態中所實施的基準位置設定步驟並不一定要實施。例如,亦可對確認用晶圓1中的任意的2個位置實施線形加工痕跡形成步驟而形成2條線形加工痕跡M1及M2,且對成為其等的中間的位置實施改質層形成步驟來形成改質層T。Furthermore, the reference position setting step implemented in the present embodiment is not necessarily implemented. For example, the linear processing mark forming step may be implemented at two arbitrary positions in the confirmation wafer 1 to form two linear processing marks M1 and M2, and the modified layer forming step may be implemented at a position in between to form the modified layer T.
在本實施形態中,是在改質層形成步驟中,改變聚光點P在基材2的內部的高度而實施有2次雷射光束L的照射及保持工作台43的加工進給。取而代之地,在改質層形成步驟中,亦可將雷射光束L的照射及保持工作台43的加工進給僅實施1次,亦可實施3次以上。In this embodiment, in the modified layer forming step, the irradiation of the laser beam L and the processing feeding of the holding table 43 are performed twice while changing the height of the focal point P inside the substrate 2. Alternatively, in the modified layer forming step, the irradiation of the laser beam L and the processing feeding of the holding table 43 may be performed only once, or may be performed three or more times.
1:確認用晶圓 2:基材 3:正面 4:背面 5:金屬箔 9:凹口 10:雷射加工裝置 11:基台 12:雷射加工單元 13:立壁部 14:保持工作台移動機構 17:臂部 18:加工頭 20:分度進給部 23,31:導軌 24:Y軸工作台 25,33:滾珠螺桿 26,35:驅動馬達 30:加工進給部 32:X軸工作台 40:保持工作台部 43:保持工作台 45:夾具部 47:θ工作台 51:控制組件 53:振盪器 54:聚光透鏡 A:箭頭 B:基準位置 L:雷射光束 P:聚光點 M:線形加工痕跡 M1:第1線形加工痕跡 M2:第2線形加工痕跡 LD:表面損傷(雷射損傷) T:改質層 d:偏移距離 X,+X,-X,Y,+Y,-Y,Z:方向1: Confirmation wafer 2: Substrate 3: Front 4: Back 5: Metal foil 9: Notch 10: Laser processing device 11: Base 12: Laser processing unit 13: Wall 14: Mechanism for holding the table moving 17: Arm 18: Processing head 20: Indexing feed section 23,31: Guide rail 24: Y-axis table 25,33: Ball screw 26,35: Drive motor 30: Processing feed section 32: X-axis table 4 0: Holding table 43: Holding table 45: Clamping unit 47: θ table 51: Control unit 53: Oscillator 54: Focusing lens A: Arrow B: Reference position L: Laser beam P: Focusing point M: Linear processing mark M1: 1st linear processing mark M2: 2nd linear processing mark LD: Surface damage (laser damage) T: Modified layer d: Offset distance X, +X, -X, Y, +Y, -Y, Z: Direction
圖1是確認用晶圓的立體圖。 圖2是確認用晶圓的局部放大截面圖。 圖3是顯示雷射加工裝置之構成的立體圖。 圖4是顯示雷射加工裝置之加工頭的構成的概要圖。 圖5是顯示設定於確認用晶圓之基準位置的平面圖。 圖6是顯示在線形加工痕跡形成步驟中的雷射光束的聚光點的截面圖。 圖7是顯示藉由線形加工痕跡形成步驟而形成於確認用晶圓的金屬箔之線形加工痕跡的說明圖。 圖8是顯示在改質層形成步驟中的雷射光束的聚光點的截面圖。 圖9是顯示線形加工痕跡與在改質層形成步驟中形成於金屬箔之表面損傷的說明圖。 圖10是顯示其他形態之藉由線形加工痕跡形成步驟而形成於金屬箔之線形加工痕跡的說明圖。FIG. 1 is a perspective view of a confirmation wafer. FIG. 2 is a partially enlarged cross-sectional view of the confirmation wafer. FIG. 3 is a perspective view showing the structure of a laser processing device. FIG. 4 is a schematic diagram showing the structure of a processing head of the laser processing device. FIG. 5 is a plan view showing a reference position set on the confirmation wafer. FIG. 6 is a cross-sectional view showing the focal point of a laser beam in a linear processing mark forming step. FIG. 7 is an explanatory view showing a linear processing mark of a metal foil formed on the confirmation wafer by the linear processing mark forming step. FIG. 8 is a cross-sectional view showing the focal point of a laser beam in a modified layer forming step. FIG. 9 is an explanatory view showing a linear processing mark and surface damage formed on the metal foil in the modified layer forming step. FIG. 10 is an explanatory diagram showing other forms of linear processing marks formed on a metal foil by the linear processing mark forming step.
M1:第1線形加工痕跡 M1: 1st linear processing mark
M2:第2線形加工痕跡 M2: 2nd linear processing mark
LD:表面損傷 LD: Surface damage
T:改質層 T: modified layer
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