TWI841951B - Detection device and manufacturing method thereof - Google Patents

Abstract

A detection device including a substrate, a conductive pad, a conductive line, a photoelectric element, and an insulating layer is provided. The substrate includes a first region and a second region surrounding the first region. The conductive pad is disposed on the substrate and is located in the second region. The conductive line is disposed on the substrate and extend from the first region to the second region. The conductive line is coupled with the conductive pad. The photoelectric element is disposed on the substrate and is located in the first region. The photoelectric element is coupled to the conductive line. The insulating layer is disposed on the photoelectric element and extends from the first region to the second region. The insulating layer has a groove, and the groove is located in the second region. A manufacturing method of a detection device is also provided.

Description

Detection device and manufacturing method thereof

The present invention relates to an electronic device and a manufacturing method thereof, and in particular to a detection device and a manufacturing method thereof.

Electrostatic discharge (ESD) is one of the main factors that cause most electronic devices to fail or break down, so ESD protection has always been an important issue in the production and use of electronic devices. In order to reduce the damage caused by ESD to the electronic components in the electronic device during the manufacturing process, the electronic components in the working area will be coupled with the external protection components as early as possible. However, if the electronic components and the protection components are coupled with metal wires, when the substrate of the electronic device is cut, the metal wires will be cut, which may cause problems such as knife slippage, loss of production capacity and/or corrosion caused by metal exposure. On the other hand, if a transparent conductive layer is used at a later stage of the manufacturing process to couple the electronic components and the protective components, although it helps to improve problems such as slippage, loss of production capacity and/or corrosion caused by metal exposure, the electronic components are not well protected against electrostatic discharge during the manufacturing process.

The present disclosure provides a detection device and a manufacturing method thereof, which are helpful to improve the problems of knife slippage, energy consumption and/or corrosion caused by metal exposure during cutting, and/or improve the electrostatic discharge protection effect.

According to an embodiment of the present disclosure, a detection device includes a substrate, a conductive pad, a wire, a photoelectric element, and an insulating layer. The substrate includes a first region and a second region surrounding the first region. The conductive pad is disposed on the substrate and is located in the second region. The wire is disposed on the substrate and extends from the first region to the second region. The wire is coupled to the conductive pad. The photoelectric element is disposed on the substrate and is located in the first region. The photoelectric element is coupled to the wire. The insulating layer is disposed on the photoelectric element and extends from the first region to the second region. The insulating layer has a groove, and the groove is located in the second region.

According to an embodiment of the present disclosure, a method for manufacturing a detection device includes: providing a substrate, the substrate including a first region and a second region surrounding the first region; forming a conductive pad on the substrate, the conductive pad being located in the second region; forming a conductive wire on the substrate, the conductive wire extending from the first region to the second region, and the conductive wire being coupled to the conductive pad; forming a photoelectric element on the substrate, the photoelectric element being located in the first region and coupled to the conductive wire; forming an insulating layer on the photoelectric element, the insulating layer extending from the first region to the second region; and patterning the insulating layer located in the second region to form a groove.

In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings.

Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and description to represent the same or similar parts.

Certain terms are used throughout this disclosure and in the attached patent claims to refer to specific components. A person of ordinary skill in the art will understand that electronic device manufacturers may refer to the same component by different names. This document does not intend to distinguish between components that have the same function but different names. In the following description and patent claims, the words "including" and "comprising" are open-ended words and should be interpreted as "including but not limited to..."

Directional terms such as "up", "down", "front", "back", "left", "right", etc., mentioned herein are only with reference to the directions of the accompanying drawings. Therefore, the directional terms used are used to illustrate, but not to limit the present disclosure. In the accompanying drawings, each diagram depicts the general characteristics of the methods, structures and/or materials used in a particular embodiment. However, these diagrams should not be interpreted as defining or limiting the scope or nature covered by these embodiments. For example, for the sake of clarity, the relative size, thickness and position of each film layer, region and/or structure may be reduced or exaggerated.

A structure (or layer, element, substrate) described in the present disclosure is located on/above another structure (or layer, element, substrate), which may mean that the two structures are adjacent and directly connected, or may mean that the two structures are adjacent but not directly connected. Indirect connection means that there is at least one intermediate structure (or intermediate layer, intermediate element, intermediate substrate, intermediate spacer) between the two structures, the lower surface of one structure is adjacent to or directly connected to the upper surface of the intermediate structure, and the upper surface of the other structure is adjacent to or directly connected to the lower surface of the intermediate structure. The intermediate structure can be a single-layer or multi-layer physical structure or a non-physical structure, without limitation. In the present disclosure, when a certain structure is disposed "on" another structure, it may mean that the certain structure is "directly" on the other structure, or it may mean that the certain structure is "indirectly" on the other structure, that is, at least one structure is sandwiched between the certain structure and the other structure.

The ordinal numbers used in the specification and patent application, such as "first", "second", etc., are used to modify the components. They do not imply or represent any previous ordinal number of the component (or components), nor do they represent the order of one component to another component, or the order of the manufacturing method. The use of these ordinal numbers is only used to make a component with a certain name clearly distinguishable from another component with the same name. The patent application and the specification may not use the same terms. Accordingly, the first component in the specification may be the second component in the patent application.

The coupling described in the present disclosure may refer to direct electrical connection or indirect electrical connection. In the case of direct electrical connection, the endpoints of the components on the two circuits are directly connected or connected to each other by a conductor segment, and in the case of indirect electrical connection, there are switches, diodes, capacitors, inductors, resistors, other suitable components, or combinations of the above components between the endpoints of the components on the two circuits, but not limited to these.

In the present disclosure, the thickness, length and width can be measured by an optical microscope (OM), and the thickness or width can be measured by a cross-sectional image in an electron microscope, but it is not limited to this. In addition, any two values or directions used for comparison may have a certain error. In addition, the terms "approximately", "equal to", "equal" or "same", "substantially" or "roughly" are generally interpreted as within 20% of a given value or range, or as within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range. In addition, the terms "a given range is from a first value to a second value", "a given range falls within the range from a first value to a second value" indicate that the given range includes the first value, the second value and other values therebetween. If the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

It should be noted that the following embodiments can replace, reorganize, and mix the features of several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. The features of each embodiment can be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meanings as those commonly understood by those of ordinary skill in the art to which the present disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present disclosure.

In the present disclosure, the electronic device may include a display device, a backlight device, an antenna device, a sensing/detection device or a splicing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The display device may be a non-self-luminous display device or a self-luminous display device. The antenna device may be a liquid crystal antenna device or a non-liquid crystal antenna device, and the sensing/detection device may be a device for sensing capacitance, light, heat energy or ultrasound, but is not limited thereto. In the present disclosure, the electronic device may include electronic components, and the electronic components may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may include a light-emitting diode or a photodiode. The light emitting diode may include, for example, an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED, or a quantum dot LED, but is not limited thereto. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any combination of the aforementioned arrangements, but is not limited thereto. The following description will use a detection device as an electronic device or a splicing device to illustrate the present disclosure, but the present disclosure is not limited thereto.

FIG. 1 is a partial top view schematic diagram of a detection device according to an embodiment of the present disclosure. FIG. 2 is an enlarged schematic diagram of region R in FIG. 1. FIG. 3 is a schematic diagram of a partial manufacturing process of a detection device according to an embodiment of the present disclosure. FIG. 4A to FIG. 4E are partial cross-sectional schematic diagrams of a partial manufacturing process of a second zone of a detection device according to an embodiment of the present disclosure. FIG. 5 is a partial cross-sectional schematic diagram of a second zone of a detection device according to an embodiment of the present disclosure. FIG. 6 is a schematic diagram of a partial manufacturing process of a detection device according to another embodiment of the present disclosure. FIG. 7A to FIG. 7F are partial cross-sectional schematic diagrams of a partial manufacturing process of a second zone of a detection device according to another embodiment of the present disclosure. The sections shown in FIG. 4A to FIG. 4E, FIG. 5, and FIG. 7A to FIG. 7F are, for example, sections corresponding to the section line A-A’ in FIG. 2. In the embodiments shown in FIG. 1 to FIG. 7F , the technical solutions provided by different embodiments may be replaced, combined or mixed with each other to form another embodiment without violating the spirit of the present disclosure.

1 and 2 , the detection device 1 may include a substrate 10, a conductive pad 11, a wire 12, a photoelectric element 13, and an insulating layer 14. The substrate 10 includes a first region R1 and a second region R2 surrounding the first region R1. The conductive pad 11 is disposed on the substrate 10 and is located in the second region R2. The wire 12 is disposed on the substrate 10 and extends from the first region R1 to the second region R2. The wire 12 is coupled to the conductive pad 11. The photoelectric element 13 is disposed on the substrate 10 and is located in the first region R1. The photoelectric element 13 is coupled to the wire 12. The insulating layer 14 is disposed on the photoelectric element 13 and extends from the first region R1 to the second region R2. The insulating layer 14 has a groove G, and the groove G is located in the second region R2.

In detail, the substrate 10 may be a hard substrate or a flexible substrate. When the substrate 10 is a hard substrate, the material may include, for example, glass, quartz, ceramic, sapphire, other suitable hard materials, or a combination of the aforementioned materials, but is not limited thereto. In some embodiments, the substrate 10 may be a flexible substrate, and the material of the substrate 10 may include polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), other suitable flexible materials, or a combination of the aforementioned materials, but is not limited thereto. In addition, the light transmittance of the substrate 10 is not limited, that is, the substrate 10 may be a light-transmitting substrate, a semi-transmitting substrate, or an opaque substrate.

The first region R1 of the substrate 10 may also be referred to as a working region. In addition to the wires 12, the photoelectric elements 13 and the insulating layer 14, the working region may also be provided with active elements (not shown), passive elements (not shown) or other circuits (not shown), but the present invention is not limited thereto.

The second region R2 of the substrate 10 may also be referred to as a peripheral region. The peripheral region is, for example, a region outside the working region. The boundary between the first region R1 and the second region R2 is indicated by a thin dotted line IF in FIG. 1 and FIG. 2 . In addition to the conductive pad 11 , the conductive line 12 and the insulating layer 14 , other circuits (not shown) or components (not shown) may also be disposed in the peripheral region.

Taking FIG. 2 as an example, before forming the substrate 10, the area above the cutting line CT is connected to the area below the cutting line CT (for example, the substrate 10). Under this structure, the electronic components in the working area can be electrically tested through a test pad (not shown) to pre-confirm the substrate that meets the product specifications and improve the yield of the electronic device. After the electrical test, cutting can be performed along the cutting line CT between the conductive pad 11 and the electrostatic protection circuit 15 to form the substrate 10, and at the same time, the frame width of the detection device 1 can be reduced. When cutting to form the substrate 10 using a wheel cutter, for example, the upper and lower areas are separated, and the cutting line CT is the edge of the substrate 10. After forming the substrate 10, the lower area in FIG. 2 can be coupled to a circuit board or other electronic components (not shown) and can be assembled with other unshown components into a detection device 1. The process method disclosed in the present disclosure is, for example, a step before the substrate is assembled into a detection device, but is not limited thereto.

In addition, when the area above the cutting line CT is connected to the area below the cutting line CT (for example, the substrate 10), an electrostatic protection circuit 15 and a transparent conductive layer 16 may be provided outside the working area R1, but the present invention is not limited thereto. The electrostatic protection circuit 15 may include an electrostatic protection element 150 and a grounding line 151, but the present invention is not limited thereto. Although not shown, the electrostatic protection element 150 may include a test pad (not shown) and a protection element (not shown), and the protection element may include, for example, a back-to-back diode, but the present invention is not limited thereto. The test pad can be, for example, disposed between the conductive pad 11 and the protective element, the protective element can be, for example, disposed between the test pad and the grounding wire 151, and the conductive pad 11, the test pad, the protective element and the grounding wire 151 can be coupled, for example, through the transparent conductive layer 16. Electrostatic discharge in the process can be output to the grounding wire 151 through the conductive wire 12, the conductive pad 11, the transparent conductive layer 16, the test pad and the protective element, thereby achieving the purpose of electrostatic discharge protection. In addition, a photoelectric element (not shown) can also be disposed in the peripheral area, but the photoelectric element is not coupled to at least one of the conductive wire extending along the second direction D2 and the conductive wire extending along the first direction D1.

After cutting to form the substrate 10, the conductive pad 11 can be used to connect with an external circuit (not shown, such as a gate drive circuit, a source drive circuit or a flexible circuit board, etc.) to achieve control of electronic components (such as active components) in the first region R1, but not limited thereto. The material of the conductive pad 11 may include metal, metal alloy, metal oxide, any conductor or a combination thereof, but not limited thereto. The metal may include aluminum, copper, molybdenum, titanium, other suitable materials or a combination thereof, but not limited thereto. The metal oxide may include indium tin oxide, aluminum zinc oxide, tin zinc oxide, indium gallium oxide or indium tin zinc oxide, but not limited thereto. The active element may include a gate and a semiconductor, the semiconductor may include a drain region, a source region and a channel region, the channel region is located between the drain region and the source region, and may also include a drain electrode and a source electrode, the drain electrode and the source electrode are coupled to the drain region and the source region of the semiconductor respectively.

For example, although not shown, the conductive pad 11 may be a single-layer structure of a transparent conductive layer (e.g., a metal oxide layer), or a multi-layer stacked structure of a transparent conductive layer and a metal layer. The transparent conductive layer may cover the metal layer, that is, the metal layer is disposed between the transparent conductive layer and the substrate 10 to protect the metal layer and/or reduce the probability of oxidation of the metal layer. In some embodiments, the metal layer of the conductive pad 11 may be the same layer as the source electrode and/or the drain electrode disposed on the substrate 10 (such as the second conductive layer) or the same layer as the gate in the active element (such as the first conductive layer), and the transparent conductive layer of the conductive pad 11 may be the topmost transparent conductive layer disposed on the substrate 10, but is not limited thereto.

The detection device 1 may include a plurality of conductive pads 11. The plurality of conductive pads 11 may be arranged along the edge of the substrate 10. As shown in FIG. 1 and FIG. 2, the plurality of conductive pads 11 disposed in the second region R2 adjacent to the upper edge of the first region R1 are, for example, arranged along the first direction D1, and the plurality of conductive pads 11 are respectively coupled to the plurality of conductive wires 12 extending along the second direction D2, and the metal layer of these conductive pads 11 may, for example, be the same layer (such as the second conductive layer) as the source electrode and/or the drain electrode disposed on the substrate 10, but is not limited thereto. On the other hand, the plurality of conductive pads 11 disposed in the second region R2 adjacent to the left edge of the first region R1 are arranged, for example, along the second direction D2, and the plurality of conductive pads 11 are respectively coupled to the plurality of conductive wires 12 extending along the first direction D1, and the metal layer of these conductive pads 11 can be, for example, the same layer (such as the first conductive layer) as the gate of the active element disposed on the substrate 10, but not limited thereto. The first direction D1 and the second direction D2 are different and intersect each other, for example, perpendicular to each other, but not limited thereto.

The wire 12 can be used to transmit electrical signals and/or conduct static electricity out of the first region R1. For example, the wire 12 can be a gate line or a data line, but is not limited thereto. The material of the wire 12 can include metal, metal alloy, metal oxide, other suitable materials or a combination thereof, but is not limited thereto. In some embodiments, the wire 12 can be formed of a material with high conductivity such as metal or metal alloy to reduce impedance and/or facilitate signal transmission. In some embodiments, the wire 12 can be the same layer as the metal layer of the conductive pad 11 (such as the first conductive layer or the second conductive layer), but is not limited thereto.

In some embodiments, the wire 12 and the transparent conductive layer 16 may be formed of different materials and different processes. For example, the wire 12 may be formed together with the gate electrode in the active element or formed together with the source electrode and/or the drain electrode, and the transparent conductive layer 16 may be formed after the wire 12, for example, the transparent conductive layer 16 may be formed together with the transparent conductive layer of the conductive pad 11, or the transparent conductive layer 16 may be formed before the transparent conductive layer of the conductive pad 11. The transparent conductive layer 16 includes a transparent conductive material. The transparent conductive material may include metal oxides (such as indium tin oxide), carbon nanotubes, graphene, other suitable materials, or combinations thereof, but is not limited thereto.

By making the transparent conductive layer 16 connecting the conductive pad 11 and the electrostatic protection circuit 15 with a transparent conductive material, the number of metal wires passed when cutting along the cutting line CT to form the substrate 10 can be reduced, thereby helping to improve problems such as slippage, consumption of production capacity or corrosion caused by metal exposure, and/or improving the electrostatic discharge protection effect.

The photoelectric element 13 can be used to convert an optical signal into an electrical signal or convert an electrical signal into an optical signal. For example, the detection device 1 can be an X-ray device, and the detection device 1 can further include a scintillator layer (not shown). The scintillator layer is disposed on the substrate 10 and can convert X-rays into visible light. The material of the scintillator layer can include cobalt iodide (CsI), other types of inorganic scintillator materials or organic scintillator materials. The photoelectric element 13 can receive visible light from the scintillator layer and convert the visible light into an electrical signal and transmit it through the wire 12.

Although not shown, the photoelectric element 13 may include a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the substrate 10, but not limited thereto. The bottom electrode may be coupled to the corresponding wire 12 through the corresponding active element. For example, the bottom electrode may be a third conductive layer, wherein one or more insulating layers may exist between the third conductive layer and the second conductive layer, and the bottom electrode may be coupled to the active element through a conductive hole penetrating the one or more insulating layers, and then coupled to the wire 12, but not limited thereto. The photoelectric conversion layer is disposed on the bottom electrode and is suitable for receiving visible light and generating a corresponding electrical signal. For example, the photoelectric conversion layer may include a stacked layer structure of a P-type semiconductor layer and an N-type semiconductor layer, but is not limited thereto. In some embodiments, the photoelectric conversion layer may also include an intrinsic semiconductor layer or a low-doped P-type semiconductor layer, and the intrinsic semiconductor layer or the low-doped P-type semiconductor layer may be disposed between the P-type semiconductor layer and the N-type semiconductor layer. The top electrode is disposed on the photoelectric conversion layer and, for example, belongs to the fourth conductive layer. The top electrode of the photoelectric element 13 is disposed corresponding to the bottom electrode of the photoelectric element 13, which means that the top electrode and the bottom electrode at least partially overlap in the normal direction of the substrate 10 (such as the third direction D3).

From the direction of looking down at the electronic device (such as the third direction D3), the top electrode is disposed on the front side of the photoelectric conversion layer, so the material of the top electrode (the material of the fourth conductive layer) adopts a transparent conductive material to facilitate the photoelectric conversion layer to receive visible light. For example, the material of the fourth conductive layer may include indium tin oxide, other metal oxides, other suitable light-transmitting conductive materials, or a combination thereof, but is not limited thereto.

From the direction of looking down at the electronic device (such as the third direction D3), the bottom electrode is disposed on the back of the photoelectric conversion layer, so the material of the bottom electrode (the material of the third conductive layer) can be a transparent conductive material or an opaque conductive material. For example, the material of the third conductive layer can include metal oxides (such as indium tin oxide), metals, metal alloys, other suitable materials, or a combination of at least two of the above, but is not limited thereto. When the material of the third conductive layer includes an opaque conductive material, for example, when the bottom electrode includes a metal electrode, the bottom electrode can reflect visible light transmitted toward the substrate 10, thereby helping to increase the absorption of visible light by the photoelectric conversion layer.

In addition to being disposed on the optoelectronic element 13, the insulating layer 14 may also be disposed on the electronic element (such as an active element, a passive element or other circuits) in the first region R1. The material of the insulating layer 14 may include an inorganic insulating material, an organic insulating material or a combination thereof, but is not limited thereto.

In some embodiments, as shown in FIG. 3 , a method for manufacturing the detection device 1 may include: providing a substrate 10, the substrate 10 including a first region R1 and a second region R2 surrounding the first region R1 (step S2); forming a conductive pad 11 on the substrate 10, the conductive pad 11 being located in the second region R2 (step S4); forming a conductive wire 12 on the substrate 10, the conductive wire 12 extending from the first region R1 to the second region R2, and the conductive wire 12 and the conductive wire 12 are connected to each other. The first region R1 and the second region R2 are connected to the conductive wire 12 (step S6); a photoelectric element 13 is formed on the substrate 10, the photoelectric element 13 is located in the first region R1 and is coupled to the conductive wire 12 (step S8); an insulating layer 14 is formed on the photoelectric element 13, the insulating layer 14 extends from the first region R1 to the second region R2 (step S14); and the insulating layer 14 located in the second region R2 is patterned to form a groove G (step S16), but not limited thereto.

As shown in FIG. 3 and FIG. 4A , forming the optoelectronic element 13 may further include forming an electrode layer M3 (step S10 ). The electrode layer M3 is, for example, a patterned conductive layer to which the bottom electrode of the optoelectronic element 13 belongs, such as a third conductive layer. The electrode layer M3 includes a first portion (not shown, for example, the bottom electrode of the optoelectronic element 13 ) and a second portion P2 .

The first portion is located in the first region R1 and coupled to the wire 12 (refer to the optoelectronic element 13 in FIG. 2 ). For example, the first portion may be formed after the wire 12, and one or more insulating layers may exist between the first portion and the wire 12, wherein the first portion may be coupled to the active element first and then to the wire 12 through a conductive hole penetrating the one or more insulating layers.

The second portion P2 is located in the second region R2 and coupled to the conductive pad 11 (the conductive pad 11 is not shown in FIG. 4A , please refer to FIG. 2 ). For example, the second portion P2 may be formed after the conductive pad 11, and one or more insulating layers may exist between the second portion P2 and the conductive pad 11, wherein the second portion P2 may be coupled to the conductive pad 11 through a conductive hole penetrating the one or more insulating layers.

In some embodiments, before forming the substrate 10, the area above the cutting line CT is connected to the area below the cutting line CT (for example, the substrate 10). The second portion P2 can, for example, first couple the conductive pad 11 to the electrostatic protection element 150 and then to the ground line 151, thereby coupling the conductive pad 11, the electrostatic protection element 150, and the ground line 151. After forming the electrode layer M3, the conductive wire 12 coupled between the active element/photoelectric element 13 and the conductive pad 11 and the second portion P2 coupled between the conductive pad 11 and the electrostatic protection circuit 15 can be used to improve the electrostatic discharge protection capability.

It should also be understood that, although not shown in FIGS. 4A to 4E , one or more insulating layers may exist between the second portion P2 and the substrate 10 , but the present invention is not limited thereto.

Forming the optoelectronic element 13 may further include forming a photoelectric conversion layer and another electrode layer (step S12). Another electrode layer refers to a conductive layer that can be used to form a top electrode of the optoelectronic element 13, such as a fourth conductive layer. Specifically, the photoelectric conversion layer and the top electrode may be sequentially formed on the bottom electrode in the first region R1.

Next, an insulating layer 14 is formed (step S14) and the insulating layer 14 in the second region R2 is patterned to form a groove G (step S16), that is, the groove G is formed after the second portion P2 of the electrode layer M3. As shown in FIG. 4B and FIG. 4C, after the aforementioned patterning step, the groove G of the insulating layer 14 exposes the second portion P2 of the electrode layer M3. In other words, the second portion P2 of the electrode layer M3 is not shielded by the insulating layer 14 after the aforementioned patterning step.

Then, another conductive line is formed (step S18). The other conductive line (not shown) is coupled to the photoelectric element 13. For example, the other conductive line is a conductive line coupled to the top electrode of the photoelectric element 13. In some embodiments, the other conductive line may be coupled to a fixed level so that the top electrode of the photoelectric element 13 is maintained at a fixed level, but is not limited thereto. In some embodiments, the other conductive line, for example, belongs to the fifth conductive layer, and there may be one or more insulating layers (including the insulating layer 14) between the other conductive line and the top electrode of the photoelectric element 13, and the other conductive line may be coupled to the top electrode of the photoelectric element 13 through a conductive hole penetrating the one or more insulating layers. In some embodiments, the fifth conductive layer may be formed of metal or metal alloy, but is not limited thereto. Forming the other conductive line may include first forming a fifth conductive layer (not shown), and then patterning the fifth conductive layer to form the other conductive line. In addition, when patterning the fifth conductive layer, a plurality of pattern blocks (not shown) may be formed, and the plurality of pattern blocks may correspond to a plurality of active elements. For example, a plurality of pattern blocks and a plurality of active elements overlap in the third direction D3 to reduce interference of external light beams on the active elements.

As shown in FIG4D , the second portion P2 of the electrode layer M3 may be removed while the fifth conductive layer is patterned to form the other conductive line. Specifically, since the groove G of the insulating layer 14 exposes the second portion P2 of the electrode layer M3 before the fifth conductive layer is patterned, the second portion P2 may also be removed together in the step of patterning the fifth conductive layer.

In some embodiments, as shown in FIG. 4E , an insulating layer 17 may be further formed on the substrate 10, wherein the insulating layer 17 is disposed on the insulating layer 14 and fills the groove G. Then, a transparent conductive layer 16 may be further formed on the insulating layer 17. After the transparent conductive layer 16 is formed, the transparent conductive layer 16 couples the conductive pad 11 and the electrostatic protection circuit 15, thereby reducing the influence of electrostatic discharge on the detection device.

In some embodiments, as shown in FIG. 4E , the transparent conductive layer 16 is disposed on the insulating layer 14 and the insulating layer 17 and adjacent to the groove G, and the transparent conductive layer 16 may not overlap with the groove G in the third direction D3. It should be understood that the relative arrangement relationship between the transparent conductive layer 16 and other film layers may be changed according to needs, but is not limited thereto. For example, as shown in FIG. 5 , the transparent conductive layer 16 may also be disposed between the insulating layer 14 and the insulating layer 17, but is not limited thereto.

In other embodiments, as shown in FIG. 6 , FIG. 7A and FIG. 7B , step S8 'of forming a photoelectric element may include step S10-1, step S10-2 and step S12. In detail, forming the electrode layer M3 may include sequentially forming a transparent conductive layer T and a metal layer M (step S10-1) and patterning the transparent conductive layer T and the metal layer M (step S10-2). In other words, the electrode layer M3 (third conductive layer) is a stacked structure of a transparent conductive layer T and a metal layer M, and each of the first portion and the second portion P2 of the electrode layer M3 includes a transparent conductive layer T and a metal layer M. Next, as shown in FIG. 7C and FIG. 7D , steps S12 to S16 are performed to form a groove G.

Then, another conductive line is formed (step S18). As shown in FIG. 7E , while forming the another conductive line, the metal layer M of the second portion P2 may be removed (e.g., etched) and the transparent conductive layer T of the second portion P2 may be retained. Then, an insulating layer 17 may be formed on the insulating layer 14. The insulating layer 17 fills the groove G and covers the transparent conductive layer T disposed in the groove G.

Before removing the metal layer M of the second portion P2, the transparent conductive layer T of the second portion P2 and the metal layer M couple the conductive pad 11 and the electrostatic protection circuit 15 to reduce the influence of electrostatic discharge. After removing the metal layer M of the second portion P2, since the transparent conductive layer T of the second portion P2 is still coupled between the conductive pad 11 and the electrostatic protection circuit 15, the influence of electrostatic discharge can still be reduced.

Under this structure, the transparent conductive layer T of the second part P2 can be used to continuously reduce the impact of electrostatic discharge. Since the transparent conductive layer T of the second part P2 can be used as a transparent conductive layer that couples the conductive pad 11 with the electrostatic protection circuit 15 in FIG. 2, it is not necessary to additionally form a transparent conductive layer 16 as shown in FIG. 4E and FIG. 5. Under this structure, it can be regarded that the transparent conductive layer is disposed in the groove G, that is, the transparent conductive layer overlaps with the groove G in the normal direction (or the top view direction, such as the third direction D3) of the substrate 10. In another embodiment, as shown in FIG. 4E and FIG. 5, an additional transparent conductive layer can be formed to improve the electrostatic discharge protection effect.

In summary, in the embodiments of the present disclosure, the problems of knife slippage, loss of production capacity or corrosion caused by metal exposure can be improved by removing the metal wire on the cutting line, and/or the electrostatic discharge protection effect can be taken into account through a special wiring design.

The above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure is described in detail with reference to the above embodiments, a person skilled in the art should understand that the technical solutions described in the above embodiments can still be modified, or some or all of the technical features can be replaced by equivalent ones. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present disclosure.

Although the embodiments and advantages of the present disclosure have been disclosed as above, it should be understood that any person with ordinary knowledge in the relevant technical field can make changes, substitutions and modifications without departing from the spirit and scope of the present disclosure, and the features between the embodiments can be arbitrarily mixed and replaced with each other to form other new embodiments. In addition, the protection scope of the present disclosure is not limited to the processes, machines, manufacturing, material compositions, devices, methods and steps in the specific embodiments described in the specification. Any person with ordinary knowledge in the relevant technical field can understand the current or future developed processes, machines, manufacturing, material compositions, devices, methods and steps from the content of the present disclosure, as long as they can implement substantially the same functions or obtain substantially the same results in the embodiments described here, they can be used according to the present disclosure. Therefore, the scope of protection of the present disclosure includes the above-mentioned processes, machines, manufactures, material compositions, devices, methods and steps. In addition, each claim item constitutes a separate embodiment, and the scope of protection of the present disclosure also includes the combination of each claim item and embodiment. The scope of protection of the present disclosure shall be determined by the scope of the attached patent application.

1: Detection device 10: Substrate 11: Conductive pad 12: Conductor 13: Photoelectric element 14, 17: Insulation layer 15: ESD protection circuit 16, T: Transparent conductive layer 150: ESD protection element 151: Grounding wire CT: Cutting line D1: First direction D2: Second direction D3: Third direction G: Groove IF: Boundary between the first and second regions M: Metal layer M3: Electrode layer P2: Second part R1: First region R2: Second region S2, S4, S6, S8, S8’, S10, S10-1, S10-2, S12, S14, S16, S18: Steps

FIG. 1 is a partial top view schematic diagram of a detection device according to an embodiment of the present disclosure. FIG. 2 is an enlarged schematic diagram of region R in FIG. 1. FIG. 3 is a schematic diagram of a partial manufacturing process of a detection device according to an embodiment of the present disclosure. FIG. 4A to FIG. 4E are partial cross-sectional schematic diagrams of a partial manufacturing process of the second zone of the detection device according to an embodiment of the present disclosure. FIG. 5 is a partial cross-sectional schematic diagram of the second zone of the detection device according to an embodiment of the present disclosure. FIG. 6 is a schematic diagram of a partial manufacturing process of a detection device according to another embodiment of the present disclosure. FIG. 7A to FIG. 7F are partial cross-sectional schematic diagrams of a partial manufacturing process of the second zone of the detection device according to another embodiment of the present disclosure.

10: Substrate

14, 17: Insulation layer

16: Transparent conductive layer

D1: First direction

D2: Second direction

D3: Third direction

G: Groove

Claims (10)

A detection device includes: a substrate including a first region and a second region surrounding the first region; a conductive pad disposed on the substrate and located in the second region; a wire disposed on the substrate and extending from the first region to the second region, wherein the wire is coupled to the conductive pad; a photoelectric element disposed on the substrate and located in the first region, wherein the photoelectric element is coupled to the wire; and an insulating layer disposed on the photoelectric element and extending from the first region to the second region, wherein the insulating layer has a groove, and the groove is located in the second region. The detection device as described in claim 1 further includes: A transparent conductive layer coupled to the conductive pad. The detection device as described in claim 2, wherein the transparent conductive layer is disposed in the groove. The detection device as described in claim 2, wherein the transparent conductive layer is disposed on the insulating layer and adjacent to the groove. The detection device as described in claim 2, wherein the material of the transparent conductive layer includes indium tin oxide. A method for manufacturing a detection device, comprising: Providing a substrate, the substrate comprising a first region and a second region surrounding the first region; Forming a conductive pad on the substrate, the conductive pad being located in the second region; Forming a wire on the substrate, the wire extending from the first region to the second region, and the wire being coupled to the conductive pad; Forming a photoelectric element on the substrate, the photoelectric element being located in the first region and coupled to the wire; Forming an insulating layer on the photoelectric element, the insulating layer extending from the first region to the second region; and Patterning the insulating layer located in the second region to form a groove. A method for manufacturing a detection device as described in claim 6, wherein forming the photoelectric element includes forming an electrode layer, the electrode layer includes a first part and a second part, the first part is located in the first region and coupled to the wire, and the second part is located in the second region and coupled to the conductive pad. A method for manufacturing a detection device as described in claim 7, wherein the groove is formed after the second portion of the electrode layer. The manufacturing method of the detection device as described in claim 7 further includes: forming another conductive line on the photoelectric element, wherein the other conductive line is coupled to the photoelectric element; and removing the second portion of the electrode layer while forming the other conductive line. The manufacturing method of the detection device as described in claim 7, wherein each of the first part and the second part includes a metal layer and a transparent conductive layer, and the manufacturing method of the detection device further includes: forming another wire on the photoelectric element, the other wire coupled to the photoelectric element; and while forming the other wire, removing the metal layer of the second part.

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