TW202343816A - Detection device and manufacturing method thereof - Google Patents

Abstract

A detection device including a substrate, a conductive pad, a conductive line, a photoelectric element, and an insulating layer is provided. The substrate includes a first region and a second region surrounding the first region. The conductive pad is disposed on the substrate and is located in the second region. The conductive line is disposed on the substrate and extend from the first region to the second region. The conductive line is coupled with the conductive pad. The photoelectric element is disposed on the substrate and is located in the first region. The photoelectric element is coupled to the conductive line. The insulating layer is disposed on the photoelectric element and extends from the first region to the second region. The insulating layer has a groove, and the groove is located in the second region. A manufacturing method of a detection device is also provided.

Description

Detection device and manufacturing method thereof

The present invention relates to an electronic device and a manufacturing method thereof, and in particular, to a detection device and a manufacturing method thereof.

Electrostatic discharge (ESD) is one of the main factors causing malfunction or damage to most electronic devices. Therefore, the protection of electrostatic discharge has always been an important issue in the production and use of electronic devices. In order to reduce the damage caused by electrostatic discharge to the electronic components in the electronic device during the manufacturing process, the electronic components in the work area will be coupled with external protection components as early as possible. However, if metal wires are used to couple electronic components and protective components, when the substrate of the electronic device is cut, the metal wires will be cut, which may easily cause problems such as blade slip, consumption of production capacity, and/or corrosion due to exposed metal. . On the other hand, if a transparent conductive layer is used at the later stage of the process to couple the electronic components and the protective components, although it will help to improve problems such as tool slip, consumption of production capacity, and/or corrosion caused by exposed metal, the electronic components will not be exposed during the manufacturing process. The electrostatic discharge protection is poor.

The present disclosure provides a detection device and a manufacturing method thereof, which can help to improve problems such as blade slip, consumption of production capacity, and/or corrosion caused by exposed metal during cutting, and/or improve the electrostatic discharge protection effect.

According to embodiments of the present disclosure, the detection device includes a substrate, a conductive pad, a wire, an optoelectronic element and an insulating layer. The substrate includes a first area and a second area surrounding the first area. The conductive pad is disposed on the substrate and located in the second area. Conductive lines are disposed on the substrate and extend from the first area to the second area. The wires are coupled to the conductive pads. The photovoltaic element is disposed on the substrate and located in the first area. The optoelectronic element is coupled to the wire. The insulating layer is disposed on the photovoltaic element and extends from the first area to the second area. The insulating layer has grooves, and the grooves are located in the second region.

According to an embodiment of the present disclosure, a manufacturing method of a detection device includes: providing a substrate including a first region and a second region surrounding the first region; forming a conductive pad on the substrate, the conductive pad being located in the second region; A conductor is formed on the substrate, and the conductor extends from the first area to the second area, and the conductor is coupled to the conductive pad; an optoelectronic element is formed on the substrate, and the optoelectronic element is located in the first area and coupled to the conductor; an insulation is formed on the optoelectronic element layer, the insulating layer extending from the first region to the second region; and patterning the insulating layer located in the second region to form grooves.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or similar parts.

Throughout this disclosure and the appended claims, certain words are used to refer to specific elements. One of ordinary skill in the art will appreciate that manufacturers of electronic devices may refer to the same component by different names. This article is not intended to differentiate between components that have the same function but have different names. In the following description and patent application, the words "including" and "include" are open-ended words, so they should be interpreted to mean "including but not limited to...".

The directional terms mentioned in this article, such as: "up", "down", "front", "back", "left", "right", etc., are only for reference to the directions in the drawings. Accordingly, the directional terms used are illustrative and not limiting of the disclosure. In the drawings, each figure illustrates the general features of methods, structures, and/or materials used in particular embodiments. However, these drawings should not be interpreted as defining or limiting the scope or nature encompassed by these embodiments. For example, the relative sizes, thicknesses, and locations of various layers, regions, and/or structures may be reduced or exaggerated for clarity.

When one structure (or layer, component, or substrate) described in this disclosure is on/above another structure (or layer, component, or substrate), it may mean that the two structures are adjacent and directly connected, or it may mean that the two structures are adjacent and directly connected. Refers to the fact that two structures are adjacent rather than directly connected. Indirect connection means that there is at least one intermediary structure (or intermediary layer, intermediary component, intermediary substrate, or intermediary spacer) between two structures. The lower surface of one structure is adjacent to or directly connected to the upper surface of the intermediary structure, and the other is The upper surface of a structure is adjacent to or directly connected to the lower surface of the intermediate structure. The intermediary structure can be composed of a single-layer or multi-layer physical structure or a non-physical structure, and there is no limit. In this disclosure, when a structure is disposed "on" another structure, it may mean that the structure is "directly" on the other structure, or that the structure is "indirectly" on the other structure, that is, between the structure and the other structure. At least one structure is also sandwiched.

The ordinal numbers used in the specification and the scope of the patent application, such as "first", "second", etc., are used to modify elements. They themselves do not imply or represent that the element (or elements) have any previous ordinal numbers, nor do they mean that the element(s) have any previous ordinal numbers. It does not represent the order of one element with another element, or the order of the manufacturing method. The use of these numbers is only used to clearly distinguish an element with a certain name from another element with the same name. The same words may not be used in the patent application scope and the description. Accordingly, the first component in the description may be the second component in the patent application scope.

The coupling described in this disclosure can refer to direct electrical connection or indirect electrical connection. In the case of direct electrical connection, the end points of the components on the two circuits are directly connected or connected to each other with a conductor line segment, and in the case of direct electrical connection, In the case of indirect electrical connection, there are switches, diodes, capacitors, inductors, resistors, other suitable components, or combinations of the above components between the end points of the components on the two circuits, but are not limited thereto.

In this disclosure, the thickness, length and width can be measured by using an optical microscope (OM), and the thickness or width can be measured by cross-sectional images in an electron microscope, but not by This is the limit. In addition, any two values or directions used for comparison may have certain errors. In addition, the terms "about", "equal to", "equal" or "the same", "substantially" or "substantially" are generally interpreted to mean within 20% of a given value or range, or to mean within a given value or range. Within 10%, 5%, 3%, 2%, 1% or 0.5% of a specified value or range. In addition, the terms "the given range is the first value to the second value" and "the given range falls within the range of the first value to the second value" mean that the given range includes the first value, the second value and their other values in between. If the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees. The angle between directions can be between 0 and 10 degrees.

It should be noted that the following embodiments can be replaced, reorganized, and mixed with features of several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. Features in various embodiments may be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted to have a meaning consistent with the relevant technology and the background or context of the present disclosure, and should not be interpreted in an idealized or overly formal manner. Unless otherwise defined in the embodiments of this disclosure.

In the present disclosure, the electronic device may include a display device, a backlight device, an antenna device, a sensing/detection device or a splicing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The display device may be a non-self-luminous display device or a self-luminous display device. The antenna device may be a liquid crystal type antenna device or a non-liquid crystal type antenna device, and the sensing/detection device may be a device that senses capacitance, light, heat energy or ultrasonic waves, but is not limited thereto. In the present disclosure, the electronic device may include electronic components, and the electronic components may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. Diodes may include light emitting diodes or photodiodes. The light emitting diode may include, for example, an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro light emitting diode (micro LED) or a quantum dot light emitting diode (quantum LED). dot LED), but not limited to this. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device can be any combination of the above, but is not limited thereto. In the following description, the detection device will be used as an electronic device or a splicing device to illustrate the disclosure, but the disclosure is not limited thereto.

FIG. 1 is a partial top view of a detection device according to an embodiment of the present disclosure. FIG. 2 is an enlarged schematic diagram of area R in FIG. 1 . FIG. 3 is a schematic diagram of part of the manufacturing process of a detection device according to an embodiment of the present disclosure. 4A to 4E are partial cross-sectional schematic diagrams of a partial manufacturing process of the second region of the detection device according to an embodiment of the present disclosure. FIG. 5 is a partial cross-sectional view of the second region of the detection device according to an embodiment of the present disclosure. FIG. 6 is a schematic diagram of part of the manufacturing process of a detection device according to another embodiment of the present disclosure. 7A to 7F are partial cross-sectional schematic diagrams of a partial manufacturing process of the second region of the detection device according to another embodiment of the present disclosure. The cross-sections shown in Figs. 4A to 4E, Fig. 5 and Figs. 7A to 7F are, for example, the cross-sections corresponding to the cross-section line A-A' in Fig. 2. In the embodiments shown in FIGS. 1 to 7F , technical solutions provided by different embodiments can be replaced, combined or mixed with each other to form another embodiment without violating the spirit of the present disclosure.

Please refer to FIG. 1 and FIG. 2 , the detection device 1 may include a substrate 10 , a conductive pad 11 , a wire 12 , a photoelectric element 13 and an insulating layer 14 . The substrate 10 includes a first region R1 and a second region R2 surrounding the first region R1. The conductive pad 11 is provided on the substrate 10 and located in the second region R2. The wire 12 is provided on the substrate 10 and extends from the first region R1 to the second region R2. The wire 12 is coupled to the conductive pad 11 . The photovoltaic element 13 is provided on the substrate 10 and located in the first region R1. The photoelectric element 13 is coupled to the wire 12 . The insulating layer 14 is provided on the photovoltaic element 13 and extends from the first region R1 to the second region R2. The insulating layer 14 has a groove G, and the groove G is located in the second region R2.

In detail, the substrate 10 may be a rigid substrate or a flexible substrate. When the substrate 10 is a hard substrate, the material may include, for example, glass, quartz, ceramic, sapphire, other suitable hard materials, or a combination of the foregoing materials, but is not limited thereto. In some embodiments, the substrate 10 may be a flexible substrate, and the material of the substrate 10 may include polycarbonate (PC), polyimide (PI), polypropylene (PP), polyp Polyethylene terephthalate (PET), other suitable flexible materials, or a combination of the aforementioned materials, but is not limited to this. In addition, the light transmittance of the substrate 10 is not limited, that is to say, the substrate 10 can be a light-transmissive substrate, a semi-light-transmitting substrate or an opaque substrate.

The first area R1 of the substrate 10 may also be called a working area. In addition to the wires 12, the optoelectronic components 13 and the insulating layer 14, active components (not shown), passive components (not shown) or other circuits (not shown) may also be provided in the working area, but this is not the case. is limited.

The second area R2 of the substrate 10 may also be called a peripheral area. The peripheral area is, for example, an area outside the work area. The boundary between the first region R1 and the second region R2 is marked with a thin dotted line IF in FIGS. 1 and 2 . In addition to the conductive pads 11, wires 12 and insulating layer 14, other circuits (not shown) or components (not shown) may also be provided in the peripheral area.

Taking FIG. 2 as an example, before forming the substrate 10, the upper area of the cutting line CT and the lower area of the cutting line CT (for example, the substrate 10) are connected together. Under this structure, electronic components in the work area can be electrically tested through test pads (not shown) to confirm in advance that substrates that meet product specifications can improve the yield rate of electronic devices. After the electrical test, the substrate 10 can be cut along the cutting line CT between the conductive pad 11 and the electrostatic protection circuit 15 , and the frame width of the detection device 1 can also be reduced. When the substrate 10 is formed by cutting, for example, using a wheel cutter, the upper and lower regions are separated, and the cutting line CT is the edge of the substrate 10 . After the substrate 10 is formed, the lower area in FIG. 2 can be coupled with a circuit board or other electronic components (not shown) and can be assembled with other components not shown to form the detection device 1 . The manufacturing method disclosed in the present disclosure is, for example, a step before the substrate is assembled into a detection device, but is not limited thereto.

In addition, when the upper area of the cutting line CT and the lower area of the cutting line CT (for example, the substrate 10 ) are connected together, an electrostatic protection circuit 15 and a transparent conductive layer 16 may also be provided outside the working area R1 , but this is not used as an example. limit. The electrostatic protection circuit 15 may include an electrostatic protection component 150 and a ground wire 151, but is not limited thereto. Although not shown, the electrostatic protection component 150 may include a test pad (not shown) and a protection component (not shown). The protection component may include, for example, a back-to-back diode, but this is not intended to be used as an example. limit. The test pad may be, for example, disposed between the conductive pad 11 and the protective element. The protective element may be disposed, for example, between the test pad and the ground line 151 . The conductive pad 11 , the test pad, the protective element and the ground line 151 may be connected, for example, through the transparent conductive layer 16 coupling. The electrostatic discharge during the manufacturing process can be output to the ground wire 151 through the wire 12, the conductive pad 11, the transparent conductive layer 16, the test pad and the protection element, thereby achieving the purpose of electrostatic discharge protection. In addition, optoelectronic elements (not shown) may also be disposed in the peripheral area, but the optoelectronic elements are not coupled to at least one of the conductors extending along the second direction D2 and the conductors extending along the first direction D1.

After cutting to form the substrate 10, the conductive pad 11 can be used to connect with an external circuit (not shown, such as a gate drive circuit, a source drive circuit or a flexible circuit board, etc.) to achieve control of the electrons in the first region R1. Control of components (such as active components), but not limited to this. The material of the conductive pad 11 may include metal, metal alloy, metal oxide, any conductor or a combination of the above, but is not limited thereto. The metal may include aluminum, copper, molybdenum, titanium, other suitable materials or combinations thereof, but is not limited thereto. The metal oxide may include indium tin oxide, zinc aluminum oxide, zinc tin oxide, indium gallium oxide or indium tin zinc oxide, but is not limited thereto. The active component may include a gate and a semiconductor. The semiconductor may include a drain region, a source region and a channel region. The channel region is located between the drain region and the source region. In addition, a drain electrode and a source electrode may also be included, and the drain electrode and the source electrode are respectively coupled to the drain region and the source region of the semiconductor.

For example, although not shown, the conductive pad 11 can be a single-layer structure of a transparent conductive layer (such as a metal oxide layer), or a multi-layer stack structure of a transparent conductive layer and a metal layer. The transparent conductive layer may cover the metal layer, that is, the metal layer is disposed between the transparent conductive layer and the substrate 10 to protect the metal layer and/or reduce the probability of oxidation of the metal layer. In some embodiments, the metal layer of the conductive pad 11 may be the same layer as the source electrode and/or the drain electrode disposed on the substrate 10 (such as the second conductive layer) or the same layer as the gate electrode in the active device ( Such as the first conductive layer), and the transparent conductive layer of the conductive pad 11 can be the topmost transparent conductive layer disposed on the substrate 10, but is not limited to this.

The detection device 1 may include a plurality of conductive pads 11 . A plurality of conductive pads 11 may be arranged along the edge of the substrate 10 . As shown in FIGS. 1 and 2 , the plurality of conductive pads 11 disposed in the second region R2 adjacent to the upper edge of the first region R1 are arranged, for example, along the first direction D1, and the plurality of conductive pads 11 are arranged along the second direction D2. The extending wires 12 are respectively coupled. The metal layers of these conductive pads 11 may be the same layer (such as the second conductive layer) as the source electrode and/or the drain electrode provided on the substrate 10, but this is not the case. is limited. On the other hand, the plurality of conductive pads 11 disposed in the second region R2 adjacent to the left edge of the first region R1 are arranged, for example, along the second direction D2, and the plurality of conductive pads 11 and the plurality of conductive lines extending along the first direction D1 12 are respectively coupled, and the metal layer of these conductive pads 11 may be, for example, the same layer (such as the first conductive layer) as the gate electrode in the active component disposed on the substrate 10 , but is not limited to this. The first direction D1 and the second direction D2 are different and intersect each other, for example, perpendicular to each other, but are not limited to this.

The wire 12 can be used to transmit electrical signals and/or lead static electricity out of the first region R1. For example, the conductor 12 can be a gate line or a data line, but is not limited thereto. The material of the conductor 12 may include metal, metal alloy, metal oxide, other suitable materials or combinations thereof, but is not limited thereto. In some embodiments, the wires 12 may be made of highly conductive materials such as metals or metal alloys to reduce impedance and/or facilitate signal transmission. In some embodiments, the wire 12 and the metal layer of the conductive pad 11 may be in the same layer (such as the first conductive layer or the second conductive layer), but this is not a limitation.

In some embodiments, the wires 12 and the transparent conductive layer 16 may be formed of different materials and different processes. For example, the wires 12 may be formed together with the gate in the active device or together with the source electrode and/or the drain electrode, and the transparent conductive layer 16 may be formed after the wires 12 , for example, the transparent conductive layer 16 may be formed with the conductive The transparent conductive layer of the pad 11 is formed together, and the transparent conductive layer 16 may also be formed before the transparent conductive layer of the conductive pad 11 . Transparent conductive layer 16 contains a transparent conductive material. The transparent conductive material may include metal oxides (such as indium tin oxide), carbon nanotubes, graphene, other suitable materials, or combinations thereof, but is not limited thereto.

By using a transparent conductive material to make the transparent conductive layer 16 connecting the conductive pad 11 and the electrostatic protection circuit 15, the number of metal wires passing through when cutting along the cutting line CT to form the substrate 10 can be reduced, thus helping to improve slippage. problems such as corrosion caused by knives, consumption of production capacity or exposed metal, and/or improve the protective effect of electrostatic discharge.

The optoelectronic element 13 can be used to convert optical signals into electrical signals or electrical signals into optical signals. For example, the detection device 1 may be an X-ray device, and the detection device 1 may further include a scintillator layer (not shown). A scintillator layer is provided on the substrate 10 and converts X-rays into visible light. The material of the scintillator layer may include cesium iodide (CsI), other types of inorganic scintillator materials, or organic scintillator materials. The optoelectronic element 13 can receive visible light from the scintillator layer and convert the visible light into electrical signals and transmit them through the wires 12 .

Although not shown, the optoelectronic element 13 may include a bottom electrode, a photoelectric conversion layer and a top electrode sequentially stacked on the substrate 10, but is not limited thereto. The bottom electrode can be coupled to the corresponding wire 12 through the corresponding active component. For example, the bottom electrode belongs to the third conductive layer, where one or more insulating layers may exist between the third conductive layer and the second conductive layer, and the bottom electrode may be connected through a via hole penetrating the one or more insulating layers. It is coupled to the active component and then coupled to the wire 12, but is not limited to this. The photoelectric conversion layer is disposed on the bottom electrode and is adapted to receive visible light and generate corresponding electrical signals. For example, the photoelectric conversion layer may include a stacked layer structure of a P-type semiconductor layer and an N-type semiconductor layer, but is not limited thereto. In some embodiments, the photoelectric conversion layer may further include an intrinsic semiconductor layer (intrinsic semiconductor layer) or a low-doped P-type semiconductor layer, and the intrinsic semiconductor layer or the low-doped P-type semiconductor layer may be disposed in the P-type between the semiconductor layer and the N-type semiconductor layer. The top electrode is provided on the photoelectric conversion layer and belongs to the fourth conductive layer, for example. The top electrode of the photovoltaic element 13 and the bottom electrode of the photovoltaic element 13 are arranged correspondingly, which means that the top electrode and the bottom electrode at least partially overlap in the normal direction of the substrate 10 (such as the third direction D3).

Viewed from the direction of looking down at the electronic device (such as the third direction D3), the top electrode is disposed on the front side of the photoelectric conversion layer. Therefore, the material of the top electrode (the material of the fourth conductive layer) is made of transparent conductive material to facilitate the reception of the photoelectric conversion layer. visible light. For example, the material of the fourth conductive layer may include indium tin oxide, other metal oxides, other suitable light-transmitting conductive materials, or combinations thereof, but is not limited thereto.

Viewed from the direction of looking down at the electronic device (such as the third direction D3), the bottom electrode is disposed on the back of the photoelectric conversion layer. Therefore, the material of the bottom electrode (the material of the third conductive layer) can be a transparent conductive material or an opaque conductive material. . For example, the material of the third conductive layer may include metal oxide (such as indium tin oxide), metal, metal alloy, other suitable materials, or a combination of at least two of the above, but is not limited thereto. When the material of the third conductive layer includes an opaque conductive material, for example, when the bottom electrode includes a metal electrode, the bottom electrode can reflect the visible light transmitted toward the substrate 10 , thereby helping to increase the absorption of visible light by the photoelectric conversion layer.

In addition to being disposed on the optoelectronic element 13, the insulating layer 14 can also be disposed on the electronic components (such as active components, passive components or other circuits, etc.) in the first region R1. The material of the insulating layer 14 may include inorganic insulating materials, organic insulating materials or combinations thereof, but is not limited thereto.

In some embodiments, as shown in Figure 3, the manufacturing method of the detection device 1 may include: providing a substrate 10, the substrate 10 including a first region R1 and a second region R2 surrounding the first region R1 (step S2); Conductive pads 11 are formed on the substrate 10, and the conductive pads 11 are located in the second area R2 (step S4); conductive wires 12 are formed on the substrate 10, and the conductive wires 12 extend from the first area R1 to the second area R2, and the conductive wires 12 and the conductive pads 11 phase coupling (step S6); form an optoelectronic element 13 on the substrate 10, which is located in the first region R1 and coupled to the wire 12 (step S8); form an insulating layer 14 on the optoelectronic element 13, and the insulating layer 14 extends from the first region R1 to the second region R2 (step S14); and patterning the insulating layer 14 located in the second region R2 to form a groove G (step S16), but is not limited thereto.

As shown in FIG. 3 and FIG. 4A , forming the photovoltaic element 13 may further include forming an electrode layer M3 (step S10 ). The electrode layer M3 is, for example, a patterned conductive layer to which the bottom electrode of the photovoltaic element 13 belongs, such as a third conductive layer. The electrode layer M3 includes a first part (not shown, such as the bottom electrode of the photovoltaic element 13) and a second part P2.

The first part is located in the first region R1 and is coupled to the wire 12 (refer to the photoelectric element 13 in FIG. 2 ). For example, the first part may be formed after the conductor 12 , and there may be one or more insulating layers between the first part and the conductor 12 , wherein the first part may first communicate with the active component through a via hole penetrating the one or more insulating layers. After coupling, it is coupled with the wire 12.

The second part P2 is located in the second region R2 and is coupled to the conductive pad 11 (the conductive pad 11 is not shown in FIG. 4A, please refer to FIG. 2). For example, the second part P2 may be formed after the conductive pad 11 , and one or more insulating layers may exist between the second part P2 and the conductive pad 11 , wherein the second part P2 may penetrate through the one or more insulating layers. via holes to couple with the conductive pad 11 .

In some embodiments, before the substrate 10 is formed, the upper area of the cutting line CT and the lower area of the cutting line CT (for example, the substrate 10 ) are connected together. For example, the second part P2 can couple the conductive pad 11 to the electrostatic protection element 150 first, and then couple it to the ground wire 151, and can couple the conductive pad 11, the electrostatic protection element 150 and the ground wire 151. After the electrode layer M3 is formed, the wire 12 coupled between the active component/photovoltaic component 13 and the conductive pad 11 and the second part P2 coupled between the conductive pad 11 and the electrostatic protection circuit 15 can be used to improve electrostatic discharge. The ability to protect.

It should also be understood that although not shown in FIGS. 4A to 4E , one or more insulating layers may exist between the second part P2 and the substrate 10 , but it is not limited thereto.

Forming the photoelectric element 13 may further include forming a photoelectric conversion layer and another electrode layer (step S12). The other electrode layer refers to a conductive layer that can be used to form the top electrode of the photovoltaic element 13, such as the fourth conductive layer. Specifically, a photoelectric conversion layer and a top electrode can be formed sequentially on the bottom electrode in the first region R1.

Next, the insulating layer 14 is formed (step S14) and the insulating layer 14 located in the second region R2 is patterned to form a groove G (step S16), that is, the groove G is formed after the second portion P2 of the electrode layer M3. As shown in FIGS. 4B and 4C , after the aforementioned patterning step, the groove G of the insulating layer 14 exposes the second portion P2 of the electrode layer M3 . In other words, the second portion P2 of the electrode layer M3 is exposed during the aforementioned patterning step. After the step, it is not shielded by the insulating layer 14 .

Then, another wire is formed (step S18). The other wire (not shown) is coupled to the optoelectronic element 13 . For example, the other wire is a wire coupled to the top electrode of the photovoltaic element 13 . In some embodiments, the other wire can be coupled to a fixed level so that the top electrode of the photovoltaic element 13 is maintained at a fixed level, but is not limited thereto. In some embodiments, the other wire belongs to the fifth conductive layer, for example, and one or more insulating layers (including the insulating layer 14 ) may exist between the other wire and the top electrode of the optoelectronic element 13 , and the Another wire can be coupled to the top electrode of the optoelectronic element 13 through a via hole penetrating the one or more insulating layers. In some embodiments, the fifth conductive layer may be formed of metal or metal alloy, but is not limited thereto. Forming the other conductive line may include first forming a fifth conductive layer (not shown), and then patterning the fifth conductive layer to form the other conductive line. In addition, when patterning the fifth conductive layer, a plurality of pattern blocks (not shown) can also be formed, and the plurality of pattern blocks can be arranged corresponding to a plurality of active components. For example, a plurality of pattern blocks and a plurality of active components are arranged in the third The three directions overlap on D3 to reduce the interference of external beams to active components.

As shown in FIG. 4D , while the fifth conductive layer is patterned to form the other conductive line, the second portion P2 of the electrode layer M3 may be removed. Specifically, since the groove G of the insulating layer 14 exposes the second part P2 of the electrode layer M3 before patterning the fifth conductive layer, the second part P2 may also be formed together during the step of patterning the fifth conductive layer. Remove.

In some embodiments, as shown in FIG. 4E , an insulating layer 17 may also be formed on the substrate 10 , wherein the insulating layer 17 is disposed on the insulating layer 14 and fills the groove G. Next, a transparent conductive layer 16 may also be formed on the insulating layer 17 . After the transparent conductive layer 16 is formed, the transparent conductive layer 16 couples the conductive pad 11 and the electrostatic protection circuit 15 to reduce the impact of electrostatic discharge on the detection device.

In some embodiments, as shown in FIG. 4E , the transparent conductive layer 16 is disposed on the insulating layer 14 and the insulating layer 17 and is adjacent to the groove G. The transparent conductive layer 16 may not overlap the groove G in the third direction D3. It should be understood that the relative arrangement relationship between the transparent conductive layer 16 and other film layers can be changed according to needs, but is not limited thereto. For example, as shown in FIG. 5 , the transparent conductive layer 16 can also be disposed between the insulating layer 14 and the insulating layer 17 , but is not limited thereto.

In other embodiments, as shown in FIG. 6, FIG. 7A and FIG. 7B, the step S8' of forming the optoelectronic element may include step S10-1, step S10-2 and step S12. In detail, forming the electrode layer M3 may include sequentially forming the transparent conductive layer T and the metal layer M (step S10-1) and patterning the transparent conductive layer T and the metal layer M (step S10-2). In other words, the electrode layer M3 (the third conductive layer) is a stacked structure of the transparent conductive layer T and the metal layer M, and each of the first part and the second part P2 of the electrode layer M3 includes the transparent conductive layer T and the metal layer Layer M. Next, as shown in FIG. 7C and FIG. 7D , steps S12 to S16 are performed to form the groove G.

Then, another wire is formed (step S18). As shown in FIG. 7E , while forming the other conductive line, the metal layer M of the second part P2 may be removed (eg, etched) and the transparent conductive layer T of the second part P2 may be retained. Next, the insulating layer 17 can be formed on the insulating layer 14 . The insulating layer 17 fills the groove G and covers the transparent conductive layer T disposed in the groove G.

Before removing the metal layer M of the second part P2, the transparent conductive layer T and the metal layer M of the second part P2 are coupled between the conductive pad 11 and the electrostatic protection circuit 15 to reduce the impact of electrostatic discharge. After the metal layer M of the second part P2 is removed, since the transparent conductive layer T of the second part P2 is still coupled between the conductive pad 11 and the electrostatic protection circuit 15 , the impact of electrostatic discharge can still be reduced.

Under this architecture, the transparent conductive layer T of the second part P2 can be used to continuously reduce the impact of electrostatic discharge. Since the transparent conductive layer T of the second part P2 can be used as the transparent conductive layer coupling the conductive pad 11 and the electrostatic protection circuit 15 in FIG. 2 , there is no need to form an additional transparent conductive layer 16 as shown in FIG. 4E and FIG. 5 . Under this architecture, the transparent conductive layer can be regarded as being disposed in the groove G, that is, the transparent conductive layer overlaps the groove G in the normal direction of the substrate 10 (or the top view direction, such as the third direction D3). In another embodiment, as shown in FIG. 4E and FIG. 5 , an additional transparent conductive layer can be formed to improve the electrostatic discharge protection effect.

To sum up, in the embodiments of the present disclosure, problems such as sliding blades, capacity consumption, or corrosion caused by exposed metal can be improved by removing metal wires located on the cutting line, and/or special wiring designs can be used. To take into account the electrostatic discharge protection effect.

The above embodiments are only used to illustrate the technical solutions of the present disclosure, but not to limit them. Although the present disclosure has been described in detail with reference to the foregoing embodiments, those with ordinary knowledge in the art should understand that they can still implement the foregoing implementations. The technical solutions described in the examples are modified, or some or all of the technical features are equivalently replaced; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to depart from the scope of the technical solutions of the embodiments of the present disclosure.

Although the embodiments and advantages of the present disclosure have been disclosed above, it should be understood that anyone with ordinary skill in the art can make changes, substitutions and modifications without departing from the spirit and scope of the disclosure, and Features between the embodiments can be mixed and replaced at will to form other new embodiments. In addition, the protection scope of the present disclosure is not limited to the processes, machines, manufacturing, material compositions, devices, methods and steps in the specific embodiments described in the specification. Anyone with ordinary knowledge in the relevant technical field can learn from the disclosure It is understood that processes, machines, manufacturing, material compositions, devices, methods and steps currently or developed in the future can be used according to the present disclosure as long as they can perform substantially the same functions or obtain substantially the same results in the embodiments described herein. Therefore, the protection scope of the present disclosure includes the above-mentioned processes, machines, manufacturing, material compositions, devices, methods and steps. In addition, each claim constitutes an individual embodiment, and the protection scope of the present disclosure also includes combinations of each claim and embodiment. The scope of protection of this disclosure shall be determined by the scope of the accompanying patent application.

1:Detection device 10:Substrate 11:Conductive pad 12:Wire 13: Optoelectronic components 14, 17: Insulation layer 15:Electrostatic protection circuit 16. T: Transparent conductive layer 150:Electrostatic protection components 151: Ground wire CT: cutting line D1: first direction D2: second direction D3: Third direction G: Groove IF: The boundary between the first area and the second area M: metal layer M3: electrode layer P2:Part Two R1: The first area R2:Second area S2, S4, S6, S8, S8’, S10, S10-1, S10-2, S12, S14, S16, S18: Steps

FIG. 1 is a partial top view of a detection device according to an embodiment of the present disclosure. FIG. 2 is an enlarged schematic diagram of area R in FIG. 1 . FIG. 3 is a schematic diagram of part of the manufacturing process of a detection device according to an embodiment of the present disclosure. 4A to 4E are partial cross-sectional schematic diagrams of a partial manufacturing process of the second region of the detection device according to an embodiment of the present disclosure. FIG. 5 is a partial cross-sectional view of the second region of the detection device according to an embodiment of the present disclosure. FIG. 6 is a schematic diagram of part of the manufacturing process of a detection device according to another embodiment of the present disclosure. 7A to 7F are partial cross-sectional schematic diagrams of a partial manufacturing process of the second region of the detection device according to another embodiment of the present disclosure.

10:Substrate

14, 17: Insulation layer

16:Transparent conductive layer

D1: first direction

D2: second direction

D3: Third direction

G: Groove

Claims (10)

A detection device including: A substrate including a first region and a second region surrounding the first region; A conductive pad disposed on the substrate and located in the second region; Conductive lines disposed on the substrate and extending from the first region to the second region, wherein the conductive lines are coupled to the conductive pads; An optoelectronic element is disposed on the substrate and located in the first region, wherein the optoelectronic element is coupled to the wire; and An insulating layer is disposed on the photovoltaic element and extends from the first region to the second region, wherein the insulating layer has grooves, and the grooves are located in the second region. The detection device as described in claim 1 also includes: A transparent conductive layer coupled to the conductive pad. The detection device according to claim 2, wherein the transparent conductive layer is disposed in the groove. The detection device of claim 2, wherein the transparent conductive layer is disposed on the insulating layer and adjacent to the groove. The detection device according to claim 2, wherein the material of the transparent conductive layer includes indium tin oxide. A method of manufacturing a detection device, including: providing a substrate including a first region and a second region surrounding the first region; forming conductive pads on the substrate, the conductive pads being located in the second region; Forming conductive lines on the substrate, the conductive lines extending from the first region to the second region, and the conductive lines being coupled to the conductive pads; Forming an optoelectronic element on the substrate, the optoelectronic element being located in the first region and coupled to the wire; forming an insulating layer on the photovoltaic element, the insulating layer extending from the first region to the second region; and The insulating layer in the second region is patterned to form grooves. The manufacturing method of a detection device according to claim 6, wherein forming the photoelectric element includes forming an electrode layer, the electrode layer includes a first part and a second part, the first part is located in the first region and coupled Connected to the wire, the second portion is located in the second region and coupled to the conductive pad. The manufacturing method of a detection device according to claim 7, wherein the groove is formed after the second part of the electrode layer. The manufacturing method of the detection device as described in claim 7 also includes: forming another conductive line on the optoelectronic element, the other conductive line being coupled to the optoelectronic element; and While the other conductive line is formed, the second portion of the electrode layer is removed. The manufacturing method of a detection device as claimed in claim 7, wherein each of the first part and the second part includes a metal layer and a transparent conductive layer, and the manufacturing method of a detection device further includes: forming another conductive line on the optoelectronic element, the other conductive line being coupled to the optoelectronic element; and While the other conductive line is formed, the metal layer of the second portion is removed.

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