TWI841322B - Pixel circuit and driving method thereof - Google Patents
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本發明是有關於一種顯示裝置,且特別是有關於一種畫素電路及其驅動方法。 The present invention relates to a display device, and in particular to a pixel circuit and a driving method thereof.
在顯示裝置中,當製程發生變異時,畫素電路中的驅動電晶體的臨界電壓(Threshold Voltage)往往容易發生漂移的現象,使得流經發光元件的電流產生非預期的變化,進而造成顯示面板的發光亮度不穩定,以影響顯示畫面的品質。 In display devices, when the manufacturing process varies, the threshold voltage of the driving transistor in the pixel circuit tends to drift, causing unexpected changes in the current flowing through the light-emitting element, which in turn causes the brightness of the display panel to be unstable, affecting the quality of the display screen.
在另一方面,畫素電路中的驅動電路也容易受到傳遞路徑的線阻影響,導致每一畫素的端點電壓不同,進而使得每一畫素中流經發光元件的電流會發生誤差。 On the other hand, the driver circuit in the pixel circuit is also easily affected by the line resistance of the transmission path, resulting in different terminal voltages for each pixel, which in turn causes errors in the current flowing through the light-emitting element in each pixel.
有鑑於此,如何改善畫素電路發生製程變異時的影響,並且有效地降低畫素電路的功率消耗,以提升顯示畫面的顯示品質,將是本領域相關技術人員重要的課題。 In view of this, how to improve the impact of process variation on pixel circuits and effectively reduce the power consumption of pixel circuits to improve the display quality of the display will be an important topic for relevant technical personnel in this field.
本發明提供一種畫素電路,能夠透過時序控制以對驅動電晶體的臨界電壓進行補償,並有效地降低畫素電路的功率消耗,藉以提升顯示畫面的品質。 The present invention provides a pixel circuit that can compensate for the critical voltage of the driving transistor through timing control and effectively reduce the power consumption of the pixel circuit, thereby improving the quality of the display image.
本發明的畫素電路包括驅動電路、資料寫入電路以及電壓調整器。驅動電路依據發光控制信號以產生驅動電流。資料寫入電路具有輸入端,資料寫入電路耦接至驅動電路,並依據源極驅動信號以提供資料電壓至輸入端。電壓調整器具有第一控制端以及第二控制端,電壓調整器耦接至驅動電路以及資料寫入電路,並依據發光控制信號、源極驅動信號以及前級源極驅動信號以調整第一控制端以及第二控制端的電壓準位。 The pixel circuit of the present invention includes a driving circuit, a data writing circuit and a voltage regulator. The driving circuit generates a driving current according to a light emission control signal. The data writing circuit has an input terminal, the data writing circuit is coupled to the driving circuit, and provides a data voltage to the input terminal according to a source driving signal. The voltage regulator has a first control terminal and a second control terminal, the voltage regulator is coupled to the driving circuit and the data writing circuit, and adjusts the voltage level of the first control terminal and the second control terminal according to the light emission control signal, the source driving signal and the previous source driving signal.
本發明的畫素電路的驅動方法,包括:提供驅動電路依據發光控制信號以產生驅動電流;提供具有輸入端的資料寫入電路,並使資料寫入電路依據源極驅動信號提供資料電壓至輸入端;以及提供具有第一控制端以及第二控制端的電壓調整器,並使電壓調整器依據發光控制信號、源極驅動信號以及前級源極驅動信號以調整第一控制端以及第二控制端的電壓準位。 The driving method of the pixel circuit of the present invention includes: providing a driving circuit to generate a driving current according to a light emission control signal; providing a data writing circuit with an input end, and making the data writing circuit provide a data voltage to the input end according to a source driving signal; and providing a voltage regulator with a first control end and a second control end, and making the voltage regulator adjust the voltage level of the first control end and the second control end according to the light emission control signal, the source driving signal and the previous source driving signal.
基於上述,本發明諸實施例所述畫素電路能夠透過時序控制以對驅動電晶體的臨界電壓進行補償,並使驅動電流的電流大小能夠與驅動電晶體的臨界電壓、系統高電壓以及系統低電壓的電壓值無關。如此一來,本發明的畫素電路可以有效地消除驅動電晶體因製程變異所造成的臨界電壓的偏移量,並且驅動電流也較不容易受到系統高電壓以及系統低電壓的路徑中的線阻影響 而發生誤差。 Based on the above, the pixel circuits described in the embodiments of the present invention can compensate for the critical voltage of the driving transistor through timing control, and make the current size of the driving current independent of the critical voltage of the driving transistor, the system high voltage, and the system low voltage. In this way, the pixel circuit of the present invention can effectively eliminate the offset of the critical voltage of the driving transistor caused by process variation, and the driving current is less likely to be affected by the line resistance in the path of the system high voltage and the system low voltage and cause errors.
100:畫素電路 100: Pixel circuit
110:驅動電路 110:Drive circuit
120:資料寫入電路 120: Data writing circuit
130:電壓調整器 130: Voltage regulator
AT:測試信號 AT: test signal
C1:電容器 C1: Capacitor
CT1、CT2:控制端 CT1, CT2: control terminal
CDP:補償與資料寫入階段 CDP: compensation and data writing phase
EM:發光控制信號 EM: luminous control signal
EP:發光階段 EP: Luminescence phase
ID:驅動電流 ID: driving current
LED:發光元件 LED: light-emitting element
PIN:輸入端 PIN: Input terminal
RP:重置階段 RP: Reset phase
SN:源極驅動信號 SN: Source drive signal
SN-1:前級源極驅動信號 SN-1: Preamplifier source drive signal
S410~S430:步驟 S410~S430: Steps
T1~T9:電晶體 T1~T9: Transistor
TFR:畫素期間 TFR: Pixel Period
VDATA:資料電壓 VDATA: data voltage
VDD:系統高電壓 VDD: system high voltage
VSS:系統低電壓 VSS: System low voltage
VREF1、VREF2:參考電壓 VREF1, VREF2: reference voltage
圖1是依照本發明一實施例的畫素電路的示意圖。 Figure 1 is a schematic diagram of a pixel circuit according to an embodiment of the present invention.
圖2是依照本發明圖1實施例的畫素電路的時序圖。 FIG2 is a timing diagram of the pixel circuit according to the embodiment of FIG1 of the present invention.
圖3A至圖3C是依照本發明圖1實施例的畫素電路操作於各個階段時的等效電路圖。 Figures 3A to 3C are equivalent circuit diagrams of the pixel circuit according to the embodiment of Figure 1 of the present invention when operating at various stages.
圖4是依照本發明一實施例的畫素電路的驅動方法的流程圖。 Figure 4 is a flow chart of a method for driving a pixel circuit according to an embodiment of the present invention.
在本案說明書全文(包括申請專利範圍)中所使用的「耦接(或連接)」一詞可指任何直接或間接的連接手段。舉例而言,若文中描述第一裝置耦接(或連接)於第二裝置,則應該被解釋成該第一裝置可以直接連接於該第二裝置,或者該第一裝置可以透過其他裝置或某種連接手段而間接地連接至該第二裝置。另外,凡可能之處,在圖式及實施方式中使用相同標號的元件/構件/步驟代表相同或類似部分。不同實施例中使用相同標號或使用相同用語的元件/構件/步驟可以相互參照相關說明。 The term "coupled (or connected)" used in the entire specification of this case (including the scope of the patent application) may refer to any direct or indirect means of connection. For example, if the text describes that a first device is coupled (or connected) to a second device, it should be interpreted that the first device can be directly connected to the second device, or the first device can be indirectly connected to the second device through other devices or some connection means. In addition, wherever possible, elements/components/steps with the same number in the drawings and embodiments represent the same or similar parts. Elements/components/steps with the same number or the same terminology in different embodiments can refer to each other for related descriptions.
圖1是依照本發明一實施例的畫素電路的示意圖。請參照圖1,在本實施例中,畫素電路100包括驅動電路110、資料寫
入電路120以及電壓調整器130。其中,驅動電路110包括發光元件LED以及電晶體T1與T2。發光元件LED的陽極端耦接至系統高電壓VDD。電晶體T1的第一端耦接至發光元件LED的陰極端,電晶體T1的第二端耦接至電壓調整器130的控制端CT2,電晶體T1的控制端接收發光控制信號EM。電晶體T2的第一端耦接至資料電壓VDATA,電晶體T2的第二端耦接至發光元件LED的陰極端,電晶體T2的控制端接收測試信號AT。
FIG1 is a schematic diagram of a pixel circuit according to an embodiment of the present invention. Referring to FIG1, in this embodiment, the
具體而言,在本實施例中,當畫素電路100操作於測試階段時(亦即,畫素電路100未設置發光元件LED時),驅動電路110的電晶體T2可以接收被致能(例如,低電壓準位)的測試信號AT,並依據測試信號AT而被導通。在此情況下,畫素電路100可以於測試階段時,透過控制發光控制信號EM、源極驅動信號SN以及前級源極驅動信號SN-1的時序狀態來提供資料電壓VDATA至畫素電路100中,以檢測各路徑的電流狀態,並藉以測試畫素電路100的操作是否正常。
Specifically, in this embodiment, when the
接著,當畫素電路100操作於測試階段之後的操作階段時(亦即,畫素電路100設置有發光元件LED時),驅動電路110的電晶體T2可以接收被禁能(例如,高電壓準位)的測試信號AT,並依據測試信號AT而被斷開。在操作階段中,驅動電路110的電晶體T1可以依據發光控制信號來提供驅動電流ID,並對應地點亮發光元件LED。其中,本實施例的發光元件LED可以例如是有機發光二極體(Organic Light Emitting Diode,OLED)、次毫
米發光二極體(mini LED)或其他微型發光元件,本發明並未特別限制。
Then, when the
資料寫入電路120耦接至驅動電路110。資料寫入電路120具有輸入端PIN。資料寫入電路120可依據源極驅動信號SN以提供資料電壓VDATA至輸入端PIN。在本實施例中,資料寫入電路120包括電容器C1以及電晶體T3與T4。電容器C1耦接於輸入端PIN以及驅動電路110之間。電晶體T3的第一端耦接至系統低電壓VSS,電晶體T3的第二端耦接至輸入端PIN,電晶體T3的控制端接收前級源極驅動信號SN-1。電晶體T4的第一端耦接至資料電壓VDATA,電晶體T4的第二端耦接至輸入端PIN,電晶體T4的控制端接收源極驅動信號SN。
The
在另一方面,電壓調整器130耦接至驅動電路110以及資料寫入電路120。電壓調整器130具有控制端CT1與CT2。電壓調整器130可以依據發光控制信號EM、源極驅動信號SN以及前級源極驅動信號SN-1以調整控制端CT1以及控制端CT2的電壓準位。
On the other hand, the
其中,電壓調整器130包括電晶體T5~T9。電晶體T5的第一端耦接至輸入端PIN,電晶體T5的第二端耦接至控制端CT1,電晶體T5的控制端接收發光控制信號EM。電晶體T6的第一端耦接至參考電壓VREF2,電晶體T6的第二端耦接至控制端CT1,電晶體T6的控制端接收前級源極驅動信號SN-1。電晶體T7的第一端耦接至參考電壓VREF1,電晶體T7的第二端耦接至
控制端CT1,電晶體T7的控制端接收源極驅動信號SN。
The
電晶體T8(例如,驅動電晶體)的第一端耦接至系統低電壓VSS,電晶體T8的第二端耦接至控制端CT2,電晶體T8的控制端耦接至控制端CT1。電晶體T9的第一端耦接至參考電壓VREF2,電晶體T9的第二端耦接至控制端CT2,電晶體T9的控制端接收前級源極驅動信號SN-1。 The first end of transistor T8 (for example, a driving transistor) is coupled to the system low voltage VSS, the second end of transistor T8 is coupled to the control end CT2, and the control end of transistor T8 is coupled to the control end CT1. The first end of transistor T9 is coupled to the reference voltage VREF2, the second end of transistor T9 is coupled to the control end CT2, and the control end of transistor T9 receives the previous source drive signal SN-1.
特別一提的是,在電晶體T1~T9的設計上,本實施例的電晶體T1~T9可以是以P型電晶體為例,但本發明實施例不以此為限。另外,在系統高電壓VDD、系統低電壓VSS、參考電壓VREF1以及參考電壓VREF2的設計上,各個電壓的電壓值由大至小可依序為參考電壓VREF2、系統高電壓VDD、參考電壓VREF1以及系統低電壓VSS。 It is worth mentioning that in the design of transistors T1~T9, the transistors T1~T9 of this embodiment can be P-type transistors, but the embodiments of the present invention are not limited to this. In addition, in the design of system high voltage VDD, system low voltage VSS, reference voltage VREF1 and reference voltage VREF2, the voltage values of each voltage can be reference voltage VREF2, system high voltage VDD, reference voltage VREF1 and system low voltage VSS in descending order.
圖2是依照本發明圖1實施例的畫素電路的時序圖。請參照圖2,在本實施例中,畫素電路100的一個畫素期間TFR可以區分為重置階段RP、補償與資料寫入階段CDP以及發光階段EP。畫素電路100可以依序操作於重置階段RP、補償與資料寫入階段CDP以及發光階段EP。重置階段RP、補償與資料寫入階段CDP以及發光階段EP彼此不相互重疊。
FIG. 2 is a timing diagram of a pixel circuit according to the embodiment of FIG. 1 of the present invention. Referring to FIG. 2, in the present embodiment, a pixel period TFR of the
關於畫素電路100的實施細節,請同時參照圖2以及圖3A至圖3C,圖3A至圖3C是依照本發明圖1實施例的畫素電路100操作於各個階段時的等效電路圖。需注意到的是,為了方便示意,在圖3A至圖3C斷開的電晶體以打叉示意,而導通的電晶體
以未打叉來示意。
For details of the implementation of the
請同時參照圖2以及圖3A,在本實施例中,圖3A為畫素電路100操作在重置階段RP時的等效電路圖。具體而言,在重置階段RP中,源極驅動信號SN以及發光控制信號EM可以被設定為高電壓準位,而前級源極驅動信號SN-1可以被設定為低電壓準位。
Please refer to FIG. 2 and FIG. 3A at the same time. In this embodiment, FIG. 3A is an equivalent circuit diagram of the
詳細來說,在重置階段RP中,資料寫入電路120可依據被拉低的前級源極驅動信號SN-1而透過電晶體T3的導通路徑來提供系統低電壓VSS至輸入端PIN,藉以使輸入端PIN的電壓準位對應地被拉低至等於系統低電壓VSS的電壓值。
Specifically, in the reset phase RP, the data write
接著,電壓調整器130可依據被拉低的前級源極驅動信號SN-1而透過電晶體T6的導通路徑來提供參考電壓VREF2至控制端CT1。並且,電壓調整器130可依據被拉低的前級源極驅動信號SN-1而透過電晶體T9的導通路徑來提供參考電壓VREF2至控制端CT2。在此情況下,電壓調整器130可以使控制端CT1以及控制端CT2的電壓準位對應地被調整至等於參考電壓VREF2的電壓值。
Then, the
在完成各節點的重置動作之後,接著請同時參照圖2以及圖3B,在本實施例中,圖3B為畫素電路100操作在補償與資料寫入階段CDP時的等效電路圖。具體而言,在補償與資料寫入階段CDP中,前級源極驅動信號SN-1以及發光控制信號EM可以被設定為高電壓準位,而源極驅動信號SN可以被設定為低電壓
準位。
After completing the reset operation of each node, please refer to FIG. 2 and FIG. 3B at the same time. In this embodiment, FIG. 3B is an equivalent circuit diagram of the
詳細來說,在補償與資料寫入階段CDP中,資料寫入電路120可依據被拉低的源極驅動信號SN而透過電晶體T4的導通路徑而提供資料電壓VDATA至輸入端PIN,以使輸入端PIN的電壓準位被拉高至資料電壓VDATA的電壓值。
Specifically, in the compensation and data writing phase CDP, the
接著,電壓調整器130可依據被拉低的源極驅動信號SN而透過電晶體T7的導通路經來提供參考電壓VREF1至控制端CT1,使得控制端CT1的電壓準位被拉低至參考電壓VREF1的電壓值。
Then, the
值得一提的是,由於本實施例的參考電壓VREF1被設計為低於參考電壓VREF2至少一個電晶體T8的臨界電壓(Threshold Voltage)VTH8的電壓值,因此,電壓調整器130的電晶體T8可依據控制端CT1的電壓準位而被導通,並使控制端CT2的電壓準位被拉低至參考電壓VREF1的電壓值以及電晶體T8的臨界電壓VTH8的電壓值之間的電壓差值(亦即,VREF1-|VTH8|)。
It is worth mentioning that, since the reference voltage VREF1 of the present embodiment is designed to be lower than the reference voltage VREF2 by at least one threshold voltage VTH8 of the transistor T8, the transistor T8 of the
請同時參照圖2以及圖3C,在本實施例中,圖3C為畫素電路100操作在發光階段EP時的等效電路圖。具體而言,在發光階段EP中,源極驅動信號SN以及前級源極驅動信號SN-1可以被設定為高電壓準位,而發光控制信號EM可以被設定為低電壓準位。
Please refer to FIG. 2 and FIG. 3C at the same time. In this embodiment, FIG. 3C is an equivalent circuit diagram of the
詳細來說,在發光階段EP中,電壓調整器130的電晶體T8(例如,驅動電晶體)可依據控制端CT1的電壓狀態而產生驅
動電流ID,並且驅動電路110可依據被拉低的發光控制信號EM以及驅動電流ID而透過電晶體T1的導通路徑來點亮發光元件LED。在此情況下,電壓調整器130可以使控制端CT2的電壓準位被拉低至系統高電壓VDD的電壓值以及發光元件LED的導通電壓VLED的電壓值之間的電壓差值(亦即,VDD-VLED)。
Specifically, in the light-emitting phase EP, the transistor T8 (e.g., the driving transistor) of the
在另一方面,電壓調整器130可依據被拉低的發光控制信號EM而透過電晶體T5的導通路徑來使輸入端PIN以及控制端CT1相互連接。接著,基於電容器C1的耦合效應以及輸入端PIN與控制端CT1於補償與資料寫入階段CDP時的電壓狀態,電壓調整器130可以將輸入端PIN以及控制端CT1的電壓準位進一步地拉低至VDATA+(VDD-VLED)-(VREF1-VTH8)的電壓值。
On the other hand, the
因此,當畫素電路100操作於發光階段EP,並且電晶體T8操作於飽和區時,電晶體T8可以產生驅動電流ID。此時,流經發光元件LED上的驅動電流ID可以如下列式子所示:ID=K(VDATA-VREF1)^2
Therefore, when the
其中,上述的ID為驅動電流ID的電流值;K為電晶體T8的製程參數;VDATA為資料電壓VDATA的電壓值;VREF1為參考電壓VREF1的電壓值。 Among them, the above ID is the current value of the driving current ID; K is the process parameter of the transistor T8; VDATA is the voltage value of the data voltage VDATA; VREF1 is the voltage value of the reference voltage VREF1.
根據上述的說明內容可以得知,於發光階段EP中,由於畫素電路100所產生的驅動電流ID能夠與電晶體T8的臨界電壓VTH8、系統高電壓VDD以及系統低電壓VSS的電壓值無關,因此,畫素電路100可以有效地消除電晶體T8因製程變異所造成的
臨界電壓的偏移量,並且驅動電流ID也較不容易受到系統高電壓VDD以及系統低電壓VSS的路徑中的線阻影響而發生誤差。
According to the above description, in the light-emitting phase EP, the driving current ID generated by the
除此之外,由於畫素電路100的發光元件LED以及電晶體T8之間設置了受發光控制信號EM所控制的電晶體T1,因此,本實施例的畫素電路100能夠有效地進行多脈衝(Multi Pulse)操作,藉以提升顯示畫面的均勻度。
In addition, since a transistor T1 controlled by the light-emitting control signal EM is provided between the light-emitting element LED and the transistor T8 of the
藉此,本實施例的畫素電路100能夠透過時序控制以對驅動電晶體的臨界電壓進行補償,並有效地降低畫素電路100的功率消耗,藉以提升顯示畫面的品質。
Thus, the
圖4是依照本發明一實施例的畫素電路的驅動方法的流程圖。請同時參照圖1以及圖4,於步驟S410中,畫素電路提供驅動電路依據發光控制信號以產生驅動電流。於步驟S420中,畫素電路提供具有輸入端的資料寫入電路,並使資料寫入電路依據源極驅動信號提供資料電壓至輸入端。於步驟S430中,畫素電路提供具有第一控制端以及第二控制端的電壓調整器,並使電壓調整器依據發光控制信號、源極驅動信號以及前級源極驅動信號以調整第一控制端以及第二控制端的電壓準位。 FIG4 is a flow chart of a driving method of a pixel circuit according to an embodiment of the present invention. Please refer to FIG1 and FIG4 at the same time. In step S410, the pixel circuit provides a driving circuit to generate a driving current according to a light-emitting control signal. In step S420, the pixel circuit provides a data writing circuit with an input terminal, and the data writing circuit provides a data voltage to the input terminal according to a source driving signal. In step S430, the pixel circuit provides a voltage regulator with a first control terminal and a second control terminal, and the voltage regulator adjusts the voltage level of the first control terminal and the second control terminal according to the light-emitting control signal, the source driving signal and the previous source driving signal.
關於各步驟的實施細節在前述的實施例及實施方式都有詳盡的說明,在此恕不多贅述。 The implementation details of each step are fully described in the aforementioned embodiments and implementation methods, so I will not elaborate on them here.
綜上所述,本發明諸實施例所述畫素電路能夠透過時序控制以對驅動電晶體的臨界電壓進行補償,並使驅動電流的電流大小能夠與驅動電晶體的臨界電壓、系統高電壓以及系統低電壓 的電壓值無關。如此一來,本發明的畫素電路可以有效地消除驅動電晶體因製程變異所造成的臨界電壓的偏移量,並且驅動電流也較不容易受到系統高電壓以及系統低電壓的路徑中的線阻影響而發生誤差。 In summary, the pixel circuits of the embodiments of the present invention can compensate for the critical voltage of the driving transistor through timing control, and make the current size of the driving current independent of the critical voltage of the driving transistor, the system high voltage, and the system low voltage. In this way, the pixel circuit of the present invention can effectively eliminate the offset of the critical voltage of the driving transistor caused by process variation, and the driving current is less likely to be affected by the line resistance in the path of the system high voltage and the system low voltage and cause errors.
100:畫素電路 100: Pixel circuit
110:驅動電路 110:Drive circuit
120:資料寫入電路 120: Data writing circuit
130:電壓調整器 130: Voltage regulator
AT:測試信號 AT: test signal
C1:電容器 C1: Capacitor
CT1、CT2:控制端 CT1, CT2: control terminal
EM:發光控制信號 EM: luminous control signal
ID:驅動電流 ID: driving current
LED:發光元件 LED: light-emitting element
PIN:輸入端 PIN: Input terminal
SN:源極驅動信號 SN: Source drive signal
SN-1:前級源極驅動信號 SN-1: Preamplifier source drive signal
T1~T9:電晶體 T1~T9: Transistor
VDATA:資料電壓 VDATA: data voltage
VDD:系統高電壓 VDD: system high voltage
VSS:系統低電壓 VSS: System low voltage
VREF1、VREF2:參考電壓 VREF1, VREF2: reference voltage
Claims (11)
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CN202311171012.6A CN117095630A (en) | 2023-03-25 | 2023-09-12 | Pixel circuit and driving method thereof |
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US20220336554A1 (en) | 2018-03-30 | 2022-10-20 | Samsung Display Co., Ltd. | Organic light emitting diode display device |
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US20220336554A1 (en) | 2018-03-30 | 2022-10-20 | Samsung Display Co., Ltd. | Organic light emitting diode display device |
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