TWI839764B - Electronic device and electronic element soldering method and led display manufacturing method - Google Patents

Abstract

The present disclosure provides an electronic device including an electronic element, a heating element and a parallel-connected circuit. The heating element is disposed on the electronic element, and the parallel-connected circuit connects the electronic element and the heating element in parallel. Therefore, an extra wire is not necessary and the cost can be reduced.

Description

Electronic device, method for welding electronic components, and method for manufacturing LED display

The present invention relates to an electronic device, a method for welding electronic components and a method for manufacturing an LED display, and more particularly to an electronic device for heating by electricity, a method for welding electronic components and a method for manufacturing an LED display.

Generally speaking, electronic components such as LEDs contain electrodes that correspond to metal contacts on a circuit board, and the two are fixed together by welding. The commonly known welding method is reflow soldering, which uses a reflow oven to heat and melt the solder on the circuit board, so that the electronic components can be connected to the circuit board. However, the reflow oven can easily cause the circuit board to warp and deform, so this welding method has high requirements on the quality of the circuit board and has its disadvantages.

Some companies install heating elements and heating metal in the circuit board. The heating metal is electrically connected to the heating element and corresponds to the metal contact. The heating element is energized to generate heat to melt the solder. However, since the heating element and heating metal must be installed in the circuit board, a multi-layer board must be used, which makes the manufacturing process more complicated and the cost higher.

In view of this, how to improve the welding method and structure of electronic components and circuit substrates has become a problem that relevant industries want to solve.

According to an embodiment of the present invention, an electronic device is provided, which includes an electronic element, a heating element and a parallel circuit. The heating element is arranged on the electronic element, and the parallel circuit connects the electronic element and the heating element in parallel.

In the electronic device according to the aforementioned embodiment, the material of the heating element can be indium tin oxide (ITO), zinc oxide (ZnO), tungsten, tantalum nitride or tantalum oxide.

In the electronic device according to the aforementioned implementation, the electronic element may be a light emitting diode (LED).

According to another embodiment of the present invention, a method for soldering electronic components is provided, which includes providing a substrate having a desired soldering position thereon; placing an electronic device as described above at the desired soldering position of the substrate; applying a solder between the electronic component in the electronic device and the desired soldering position of the substrate; passing a heating current through a parallel circuit in the electronic device so that a heating element in the parallel circuit generates heat to melt the solder, and the electronic component is soldered to the desired soldering position of the substrate by the molten solder; passing a fusing current that is larger than the heating current through the parallel circuit so that the parallel circuit forms an open circuit at the heating element; and stopping the passing of the fusing current.

According to another embodiment of the present invention, a method for soldering electronic components is provided, which includes providing a substrate having a desired soldering position thereon, and further providing a heating element on the substrate, the heating element being arranged corresponding to the desired soldering position; placing an electronic component at the desired soldering position of the substrate, and connecting the electronic component and the heating element in parallel to form a parallel circuit; applying a solder between the electronic component and the desired soldering position of the substrate; passing a heating current through the parallel circuit, so that the heating element on the parallel circuit generates heat to melt the solder, and the electronic component is soldered to the desired soldering position of the substrate by the molten solder; passing a fusing current larger than the heating current through the parallel circuit, so that the parallel circuit forms an open circuit at the heating element; and stopping the passing of the fusing current.

In the method for soldering electronic components according to the aforementioned embodiment, the heating current can be a forward current relative to the electronic components on the parallel circuit.

In the method for soldering electronic components according to the aforementioned embodiment, the heating current can be a reverse current relative to the electronic components on the parallel circuit.

In the method for welding electronic components according to the aforementioned implementation, the melting current can be a forward current relative to the electronic components on the parallel circuit.

In the method for welding electronic components according to the aforementioned implementation, the fusing current can be a reverse current relative to the electronic components on the parallel circuit.

According to the method for welding electronic components in the above-mentioned embodiment, the substrate may be a thin film transistor (TFT) substrate.

According to the method for welding electronic components of the aforementioned implementation mode, the electronic components can be light emitting diodes (LEDs).

According to the method of soldering electronic components of the aforementioned embodiment, solder can be applied to the P pole and N pole of the light-emitting diode respectively.

According to another embodiment of the present invention, a method for manufacturing an LED display is provided, which includes welding LEDs using the aforementioned method for welding electronic components.

The following will describe the embodiments of the present invention with reference to the drawings. For the purpose of clarity, many practical details will be described together in the following description. However, the reader should understand that these practical details should not be used to limit the present invention. That is, in some embodiments of the present invention, these practical details are not necessary. In addition, in order to simplify the drawings, some commonly used structures and components will be shown in the drawings in a simple schematic manner; and repeated components may be represented by the same number or similar number.

In addition, the terms "first", "second", "third" and the like in this article are only used to describe different elements or components, and do not limit the elements/components themselves. Therefore, the first element/component can also be renamed as the second element/component. Moreover, the combination of elements/components/mechanisms/modules in this article is not a generally known, conventional or familiar combination in this field. Whether the elements/components/mechanisms/modules themselves are familiar cannot be used to determine whether their combination relationship is easy to be completed by a person of ordinary skill in the technical field.

Referring to FIG. 1 and FIG. 2 , the electronic device 100 includes an electronic component 110 , a heating element 120 , and a parallel circuit 130 . The heating element 120 is disposed on the electronic component 110 , and the parallel circuit 130 connects the electronic component 110 and the heating element 120 in parallel.

Specifically, the electronic element 110 may be a light-emitting diode, which includes an element substrate 111, a first type semiconductor layer 112, an active layer 113, a second type semiconductor layer 114, an indium tin oxide (ITO) layer 115, a P pole 116, an N pole 117, and a protective layer 118. The element substrate 111 may be made of, for example, sapphire material, and the first type semiconductor layer 112 may be, for example, an N-type nitride semiconductor stacking layer, such as N-type doped gallium nitride (GaN), aluminum gallium nitride (AlGaN), aluminum indium gallium nitride (AlInGaN), or indium gallium nitride (InGaN). The active layer 113 may be a quantum well, such as multiple quantum wells. The second type semiconductor layer 114 may be a P-type nitride semiconductor stacked layer, such as P-type doped gallium nitride, aluminum gallium nitride, aluminum indium gallium nitride or indium gallium nitride. The materials used in the present invention are the same as above but not limited thereto, and the structure is also not limited thereto.

The P-pole 116 may be, for example, a multi-layer conductor structure and sequentially include a first titanium layer 1161, an aluminum layer 1162, and a second titanium layer 1163. The N-pole 117 may also be a multi-layer structure (multi-layers are not shown in the figure) and have the same composition as the P-pole 116. In other embodiments, the P-pole and the N-pole may be a single-layer conductor structure and include only a metal.

The heating element 120 can be disposed on the electronic element 110 and includes a first connection area 121, a second connection area 122 and a heating area 123. The first connection area 121 can be disposed above the P pole 116 and electrically connected to the P pole 116, and the second connection area 122 is disposed above the N pole 117 and electrically connected to the N pole 117. The heating area 123 is connected between the first connection area 121 and the second connection area 122. The material of the first connection area 121, the second connection area 122 and the heating area 123 can all be indium tin oxide, and the heating area 123, the first connection area 121 and the second connection area 122 can be connected to form a current channel, so that current can flow through. In other embodiments, the material of the heating element may be zinc oxide, tungsten, tantalum nitride or tantalum oxide, including but not limited to these.

Since the first connection area 121, the second connection area 122 and the heating area 123 of the heating element 120 are connected to form a current channel, the P pole 116, the indium tin oxide layer 115, the second type semiconductor layer 114, the active layer 113, the first type semiconductor layer 112, and the N pole 117 can form a current channel. These two current channels share nodes at two ends and can be regarded as a parallel circuit 130.

In the first embodiment, the first solder bump 141 and the second solder bump 142 can be manufactured together when the electronic component 110 and the heating element 120 are manufactured. In other words, the electronic component 110, the heating element 120, the first solder bump 141 and the second solder bump 142 can be manufactured as one body.

As shown in FIG. 2 , a width W1 of the first connecting area 121 and the second connecting area 122 on a Y axis is shorter than a width W2 of the heating area 123 on the Y axis, and a length L1 of the first connecting area 121 and the second connecting area 122 on an X axis is longer than a length L2 of the heating area 123 on the X axis.

Please refer to FIG. 3, FIG. 4 and FIG. 5, and refer to FIG. 1 and FIG. 2 together. The electronic device 100 can be placed on a substrate S1. The substrate S1 includes a first substrate solder joint S11 and a second substrate solder joint S12. The first substrate solder joint S11 is used to electrically connect to the P pole 116 of the electronic device 100, and the second substrate solder joint S12 is used to electrically connect to the N pole 117 of the electronic device 100. In this way, the driving circuit on the substrate S1 can control the opening and closing of the electronic element 110. The substrate S1 can be a thin film transistor (TFT) substrate. In other embodiments, the substrate can be other types of circuit boards including active components, but is not limited thereto.

As shown in FIG3, FIG4 and FIG5, solder S2 can be disposed between the first substrate solder joint S11 and the first tin bump 141, and solder S2 can also be disposed between the second substrate solder joint S12 and the second tin bump 142. When a heating current I1 is initially applied, its forward bias is higher than the starting voltage of the electronic component 110, so the current channel of the first substrate solder joint S11, the first tin bump 141, the P pole 116, the indium oxide tin layer 115, the second type semiconductor layer 114, the active layer 113, the first type semiconductor layer 112, and the N pole 117 in the parallel circuit 130 will also flow into a part of the heating current I1; The current channels of the first substrate solder joint S11, the first solder bump 141, the first connection area 121, the heating area 123, the second connection area 122 and the second solder bump 142 in the parallel circuit 130 are available for the flow of another part of the heating current I1. The heating current I1 is in the same direction as the forward current. The heating current I1 is about 30 mA and lasts for 20 milliseconds. At this time, the heating area 123 can be raised to about 260 ^° C, and the first solder bump 141, the solder S2 and the second solder bump 142 can be melted, and the electronic component 110 and the substrate S1 can be completely welded. In other embodiments, when the heating current is initially applied, the forward bias voltage can be lower than the starting voltage of the electronic component, so that the current channel of the first substrate solder joint, the first tin bump, the P pole, the indium oxide tin layer, the second type semiconductor layer, the active layer, the first type semiconductor layer, and the N pole in the parallel circuit cannot flow into the heating current, and the heating current flows entirely into the heating element. In other embodiments, the first tin bump and the second tin bump can also be used as solder, and no additional solder is required.

Afterwards, the current can be increased, that is, a melting current I2 is introduced, the melting current I2 is about 200 mA and lasts for 1 millisecond. At this time, the heating zone 123 can be raised to about 400 ^o C and cracks will occur. In this way, the current can no longer flow through the current channels of the first connecting zone 121, the heating zone 123 and the second connecting zone 122 in the parallel circuit 130.

In other words, the first embodiment achieves a two-stage temperature rise by adjusting the current size. The first stage of temperature rise can melt the solder S2, and the second stage of temperature rise can disable the current channels of the first connection area 121, the heating area 123 and the second connection area 122 in the parallel circuit 130. In this way, the original first substrate solder point S11, the second substrate solder point S12 and the driving circuit on the substrate S1 can be directly used to achieve the welding effect without the need to design other additional heating elements.

Please refer to FIG. 6 and FIG. 1 to FIG. 3 together. In addition to passing a forward current relative to the electronic component 110 into the parallel circuit 130 as shown in FIG. 4, a reverse current relative to the electronic component 110 may also be passed into the parallel circuit 130 as shown in FIG. 6 (i.e., a current flowing in from the second substrate solder point S12 and the second solder bump 142 and then flowing out from the first solder bump 141 and the first substrate solder point S11), and during soldering, the substrate S1 is given a reverse bias, but this is not limited to the above disclosure.

Please refer to FIG. 7 . The structure and welding process of the electronic device of the second embodiment are similar to those of the first embodiment. The difference is that the heating element 220 includes two hollow spaces 224 located in the heating zone 223 . Each hollow space 224 is rectangular. Thus, the resistance of the heating element 220 is 55.8 Ω, which is different from the resistance of the heating element 120 .

Please refer to FIG8 . The structure and welding process of the electronic device of the third embodiment are similar to those of the first embodiment, except that the heating element 320 includes a plurality of hollows 324 located in the heating zone 323, and each hollow 324 is square, so that the resistance of the heating element 320 can be 44 Ω, which is different from the resistance of the heating element 120 and also different from the resistance of the heating element 220. In other embodiments, the desired resistance of the heating element can also be set through the configuration on the structure, which is not limited to the above disclosure.

Please refer to FIG. 9 and FIG. 10 , a heating element 420 and an electronic element 410 are disposed on the substrate S1 .

Specifically, the electronic component 410 may be a light-emitting diode, which includes a component substrate, a first type semiconductor layer, an active layer, a second type semiconductor layer, an indium oxide tin layer, a P pole and an N pole, and a first tin bump 441 and a second tin bump 442 may be provided to connect the P pole and the N pole respectively. The difference from the first embodiment is that the heating element 420 is provided on the substrate S1, rather than being provided on the electronic component 410 to be formed integrally with the electronic component 410. More specifically, the heating element 420 may include a first connection area 421, a second connection area 422 and a heating area 423. The first connection area 421 is located between the surface of the substrate S1 and the first substrate solder point S11, the second connection area 422 is located between the surface of the substrate S1 and the second substrate solder point S12, and the heating area 423 is located on the surface of the substrate S1 and connects the first connection area 421 and the second connection area 422. The materials of the first connection area 421, the second connection area 422 and the heating area 423 can all be indium tin oxide, so that the first connection area 421, the second connection area 422 and the heating area 423 can be connected to form a current channel. Since the first substrate solder point S11 corresponds to the P pole and the second substrate solder point S12 corresponds to the N pole, a parallel circuit 430 can be formed with another current channel formed by the P pole, the indium tin oxide layer, the second type semiconductor layer, the active layer, the first type semiconductor layer, and the N pole.

As shown in FIG9 and FIG10, the wire Wr1 can be connected to the first substrate soldering point S11, and the wire Wr2 can be connected to the second substrate soldering point S12, and the power supply is controlled by the LED driver D1. The first connection area 421 and the second connection area 422 have the same shape as the first substrate soldering point S11 and the second substrate soldering point S12, so the first connection area 421 and the second connection area 422 are not visible in the top view of FIG10. Therefore, during welding, the LED driver D1 controls the heating current to be supplied first, and the heating current flows through the first connection area 421, the heating area 423 and the second connection area 422, so as to melt the solder S2. Afterwards, the melting current can be supplied, and the heating area 423 generates cracks to disconnect the current channels of the first connection area 421, the heating area 423 and the second connection area 422 in the parallel circuit 430. In other embodiments, the first solder bump and the second solder bump disposed on the electronic component may also be used as solder, and no additional solder is required.

11 , the method 500 for soldering electronic components includes a substrate providing step 510 , an electronic component providing step 520 , a conductive soldering step 530 , and a conductive disconnecting step 540 .

In the substrate providing step 510, a substrate is provided, wherein the substrate includes a first substrate soldering point and a second substrate soldering point.

In the electronic component providing step 520, an electronic component is provided, which has a first component solder joint and a second component solder joint, so that the first component solder joint contacts the first substrate solder joint through a solder, and the second component solder joint contacts the second substrate solder joint through another solder.

In the conductive soldering step 530, a first current is provided to a conductive heating structure through the first substrate soldering point and the second substrate soldering point. The conductive heating structure is located on the electronic component to form a current channel between the first component soldering point and the second component soldering point, or is located on the substrate to form a current channel between the first substrate soldering point and the second substrate soldering point. The first current passes through the current channel to heat the conductive heating structure to melt the aforementioned solder and connect the first substrate soldering point and the first component soldering point, and to melt the aforementioned other solder and connect the second substrate soldering point and the second component soldering point.

In the conductive disconnection step 540, a second current is provided to the conductive heating structure through the first substrate solder joint and the second substrate solder joint to disconnect the current channel.

In conjunction with the first embodiment of FIG. 1 , the first solder bump 141 can be defined as a first component solder joint, the second solder bump 142 can be defined as a second component solder joint, and the heating element 120 can be a conductive heating structure located on the electronic element 110; or, when the first solder bump 141 and the second solder bump 142 are used as solder, the P pole 116 can be defined as a first component solder joint, and the N pole 117 can be defined as a second component solder joint. In conjunction with the fourth embodiment of FIG. 9 , the heating element 420 can be a conductive heating structure located on the substrate S1. Accordingly, the first substrate solder joint and the second substrate solder joint on the substrate can directly provide the first current to the conductive heating structure. After the conductive heating structure is energized, it will generate heat energy and melt the solder. Finally, by increasing the current, cracks can be generated in the heating area, thereby disconnecting the current channel. When powered on, the LED driver can control the heating current to be generated between the first substrate solder joint and the second substrate solder joint, and the portion of the heating current that flows into the conductive heating structure can be defined as the first current. In one embodiment, the heating current can completely flow into the conductive heating structure and be equal to the first current, but it is not limited to this. Similarly, the LED driver can control the melting current to be generated between the first substrate solder joint and the second substrate solder joint, and the portion of the melting current that flows into the conductive heating structure can be defined as the second current. The heating current is smaller than the melting current, so the first current is also smaller than the second current.

Please refer to FIG. 12. In one embodiment, step 501 may be performed to provide a substrate having a desired welding position thereon. As shown in FIG. 3, the substrate S1 may include a first substrate welding point S11 and a second substrate welding point S12.

Perform step 502 to place an electronic device at the desired soldering position of the substrate. As shown in Figures 1 and 3, the electronic device 100 is placed on the substrate S1, and the first solder bump 141 corresponds to the first substrate solder point S11, and the second solder bump 142 corresponds to the second substrate solder point S12.

Perform step 503 to apply a solder between the electronic component in the electronic device and the desired soldering position of the substrate. As shown in FIG3 , solder S2 can be applied between the first substrate solder joint S11 and the first solder bump 141, and solder S2 can be applied between the second substrate solder joint S12 and the second solder bump 142. In other embodiments, solder can be applied to the P pole and N pole of the electronic component respectively, that is, the first solder bump and the second solder bump are equivalent to solder, and no additional solder needs to be applied.

Step 504 is executed to pass a heating current through the parallel circuit in the electronic device, so that the heating element in the parallel circuit generates heat to melt the solder, and the electronic element is soldered to the desired soldering position of the substrate by the molten solder. The heating current can be a forward current relative to the electronic element in the parallel circuit. As shown in Figures 3 to 5, the heating current I1 can flow from the first substrate solder point S11 and the first solder bump 141 into the first connection area 121, the heating area 123 and the second connection area 122, and then flow out from the second solder bump 142 and the second substrate solder point S12 (the current flowing through the above-mentioned elements is also the first current). In this way, the heating zone 123 can be powered on to increase the temperature, and the first solder bump 141, the solder S2 and the second solder bump 142 can be melted to solder the electronic component 110 to the substrate S1. In other embodiments, the heating current can be a reverse current relative to the electronic components on the parallel circuit.

Afterwards, step 505 may be performed to pass a melting current greater than the heating current into the electronic device, so that the parallel circuit is broken at the heating element, and the melting current may be a forward current relative to the electronic element on the electronic device. As shown in FIGS. 3 to 5 , when the solder S2 is melted and the welding is completed, the current channels of the first connecting area 121, the second connecting area 122 and the heating area 123 are no longer necessary. Therefore, by passing a melting current I2 (e.g., 200 mA), all or at least a portion of the melting current I2 (the current flowing through the first connection area 121, the heating area 123, and the second connection area 122 is the second current) can be passed to cause cracks in the heating area 123, so that the current channels of the first connection area 121, the second connection area 122, and the heating area 123 are disconnected, and the first connection area 121 and the second connection area 122 cannot be electrically connected through the heating area 123. Finally, step 506 can be executed to stop passing the melting current. Please note that in this article, two implementation modes may be included: "turning off the heating current and then passing the melting current" and "not stopping the heating current but increasing the current so that the heating current becomes the melting current".

Please refer to FIG. 13 , in another embodiment, step 511 is performed, which includes providing a substrate having a desired welding position thereon, and further providing a heating element on the substrate, the heating element being arranged corresponding to the desired welding position. As shown in FIG. 9 , the substrate S1 includes a first substrate welding point S11 and a second substrate welding point S12, and the first connection area 421, the second connection area 422 and the heating area 423 of the heating element 420 are all located on the surface of the substrate S1.

Execute step 512, place an electronic component at the desired soldering position of the substrate, and connect the electronic component and the heating element in parallel to form a parallel circuit. As shown in FIG. 9, place the electronic component 410 on the substrate S1, and the first solder bump 441 corresponds to the first substrate solder point S11 and the first connection area 421, and the second solder bump 442 corresponds to the second substrate solder point S12 and the second connection area 422, so as to form a parallel circuit 430.

Step 513 is performed to apply a solder between the electronic component and the desired soldering position of the substrate. As shown in FIG9 , the solder S2 may be applied between the first substrate solder joint S11 and the first solder bump 441, and the solder S2 may be applied between the second substrate solder joint S12 and the second solder bump 442. In other embodiments, the solder may be applied to the P pole and the N pole of the electronic component, respectively, that is, the first solder bump and the second solder bump are equivalent to the solder, and no additional solder is applied.

Step 514 is executed to pass a heating current through the parallel circuit, so that the heating element in the parallel circuit generates heat to melt the solder, and the electronic component is soldered to the desired soldering position of the substrate by the molten solder. As shown in FIG. 9 , the heating current I1 can flow from the first substrate soldering point S11 and the first solder bump 441 into the first connecting area 421, the heating area 423 and the second connecting area 422 (the current flowing through the above-mentioned elements is also the first current), and then flow out from the second solder bump 442 and the second substrate soldering point S12. In this way, the heating area 423 can be powered on to increase the temperature, and the first solder bump 441, the solder S2 and the second solder bump 442 can be melted to solder the electronic component 410 to the substrate S1. In other embodiments, a reverse current can also be passed.

Afterwards, a melting current greater than the heating current may be introduced into the parallel circuit in step 515, so that the parallel circuit is broken at the heating element. As shown in FIG9 , when the solder S2 is melted and the welding is completed, the current paths of the first connection area 421, the second connection area 422 and the heating area 423 are no longer necessary. Therefore, by passing a fusing current I2 (e.g., 200 mA), all or at least a portion of the fusing current I2 (the current flowing through the first connection area 421, the heating area 423, and the second connection area 422 is the second current) is passed to cause cracks in the heating area 423, so that the current channels of the first connection area 421, the second connection area 422, and the heating area 423 are disconnected, and the first connection area 421 and the second connection area 422 cannot be electrically connected through the heating area 423. Finally, step 516 can be executed to stop passing the fusing current.

The present invention may further include a method for manufacturing an LED display, which includes welding LEDs according to the method 500 of welding electronic components as shown in FIG. 11 , FIG. 12 and FIG. 13 .

Although the present invention has been disclosed as above by way of embodiments, it is not intended to limit the present invention. Anyone skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined in the attached patent application.

100: electronic device 110,410: electronic component 111: component substrate 112: first type semiconductor layer 113: active layer 114: second type semiconductor layer 115: indium tin oxide layer 116: P pole 1161: first titanium layer 1162: aluminum layer 1163: second titanium layer 117: N pole 118: protective layer 120,220,320,420: heating element 121,421: first connection area 122,422: second connection area 123,223,323,423: heating area 130,430: parallel line 141,441: first solder bump 142,442: second solder bump 224,324: hollow space 500: method for soldering electronic components 510: substrate providing step 520: electronic component providing step 530: conductive soldering step 540: conductive disconnecting step 501,502,503,504,505,506,511,512,513,514,515,516: steps D1: LED driver I1: heating current I2: melting current L1,L2: length S1: substrate S11: first substrate solder joint S12: second substrate solder joint S2: solder W1,W2: width Wr1, Wr2: wire X, Y: axis

FIG. 1 is a schematic diagram of an electronic device according to the first embodiment of the present invention; FIG. 2 is a schematic diagram of a top view of a heating element of the electronic device of the first embodiment of FIG. 1; FIG. 3 is a schematic diagram of a welding process of welding an electronic device of the first embodiment of the present invention to a substrate; FIG. 4 is a schematic diagram of a welding process of an equivalent circuit of the electronic device of the first embodiment of the present invention; FIG. 5 is a current-time diagram of a heating current and a melting current of the electronic device of the first embodiment of the present invention; FIG. 6 is a schematic diagram of a welding process of another equivalent circuit of the electronic device of the first embodiment of the present invention; FIG. 7 is a schematic diagram of a top view of a heating element of an electronic device of the second embodiment of the present invention; FIG. 8 is a schematic diagram of a top view of a heating element of an electronic device of the third embodiment of the present invention; FIG9 is a schematic diagram of an electronic component, a heating element and a substrate according to the fourth embodiment of the present invention; FIG10 is a schematic diagram of a top view of the heating element and the substrate of the fourth embodiment of FIG9; FIG11 is a block flow chart of a method for welding electronic components according to the fifth embodiment of the present invention; FIG12 is a step flow chart of the method for welding electronic components of the fifth embodiment of FIG11; and FIG13 is another step flow chart of the method for welding electronic components of the fifth embodiment of FIG11.

100: Electronic devices

110: Electronic components

111: Component substrate

112: Type I semiconductor layer

113: Active layer

114: Type II semiconductor layer

115: Indium tin oxide layer

116:P Extreme

1161: First Titanium Layer

1162: Aluminum layer

1163: Second titanium layer

117: N pole

118: Protective layer

121: First connection area

122: Second connection area

123: Heating zone

130: Parallel circuit

141: First solder bump

142: Second solder bump

Claims (13)

An electronic device comprises: an electronic component, comprising a component substrate; a heating element, which is arranged on the component substrate; and a parallel circuit, which connects the electronic component and the heating element in parallel; wherein, after the parallel circuit is heated, the parallel circuit forms an open circuit at the heating element. An electronic device as described in claim 1, wherein the material of the heating element is indium tin oxide (ITO), zinc oxide (ZnO), tungsten, tantalum nitride or tantalum oxide. An electronic device as described in claim 1, wherein the electronic component is a light emitting diode (LED). A method for soldering electronic components, comprising: providing a substrate having a desired soldering position on it; placing an electronic device as claimed in claim 1 at the desired soldering position of the substrate; applying a solder between the electronic component in the electronic device and the desired soldering position of the substrate; passing a heating current through the parallel circuit in the electronic device so that the heating element on the parallel circuit generates heat to melt the solder, and the electronic component is soldered to the desired soldering position of the substrate by the molten solder; passing a fusing current larger than the heating current through the parallel circuit so that the parallel circuit forms an open circuit at the heating element; and stopping the passing of the fusing current. A method for soldering electronic components comprises: providing a substrate having a desired soldering position on the substrate, and further providing a heating element on the substrate, the heating element being provided corresponding to the desired soldering position; placing an electronic component at the desired soldering position of the substrate, and connecting the electronic component and the heating element in parallel to form a parallel circuit; applying a solder between the electronic component and the desired soldering position of the substrate; passing a heating current through the parallel circuit, so that the heating element on the parallel circuit generates heat to melt the solder, and the electronic component is soldered to the desired soldering position of the substrate by the molten solder; passing a fusing current larger than the heating current through the parallel circuit, so that the parallel circuit forms an open circuit at the heating element; and stopping the fusing current. A method for soldering electronic components as described in claim 4 or 5, wherein the heating current is a forward current relative to the electronic component on the parallel circuit. A method for soldering electronic components as described in claim 4 or 5, wherein the heating current is a reverse current relative to the electronic component on the parallel circuit. A method for welding electronic components as described in claim 4 or 5, wherein the melting current is a forward current relative to the electronic component on the parallel circuit. A method for welding electronic components as described in claim 4 or 5, wherein the fusing current is a reverse current relative to the electronic component on the parallel circuit. A method for welding electronic components as described in claim 4 or 5, wherein the substrate is a thin film transistor (TFT) substrate. A method for welding electronic components as described in claim 4 or 5, wherein the electronic component is a light emitting diode (LED). A method for soldering electronic components as described in claim 11, wherein the solder is applied to the P pole and N pole of the light-emitting diode respectively. A method for manufacturing an LED display, comprising soldering an LED using the method for soldering electronic components as described in claim 11.

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