TWI839586B - Plasma processing equipment - Google Patents

Abstract

The present invention is applicable to the field of semiconductor etching, and discloses a leveling mechanism for vacuum equipment and a plasma processing device. The leveling mechanism for vacuum equipment includes at least one gap adjusting member and a sealing bellows arranged on the periphery of the gap adjusting member. The gap adjusting member includes a double-layer bolt and a vacuum bellows sleeved on the periphery of the double-layer bolt. The two ends of the double-layer bolt are respectively connected to a first component and a second component. By setting a plurality of gap adjusting parts, specifically by combining a vacuum bellows and a double-layer bolt, the distance between the first component and the second component can be at least partially adjusted by adjusting the corresponding double-layer bolt, thereby achieving partial distance change between the two components by setting a plurality of gap adjusting parts to adjust the corresponding double-layer bolts in the vacuum equipment. In addition, a sealing bellows is set on the periphery of the gap adjusting part to prevent gas leakage in the vacuum equipment, thereby ensuring airtightness.

Description

Plasma processing equipment

The present invention relates to the field of semiconductor etching technology, and in particular to a leveling mechanism and plasma processing device for vacuum equipment.

The production process of semiconductor devices needs to be completed in various semiconductor production equipment, among which semiconductor production equipment includes vacuum processing equipment. Vacuum equipment refers to processing equipment for processing semiconductor substrates in a vacuum or reduced pressure state. Existing devices for adjusting the distance between components are applied to vacuum equipment, such as the semiconductor etching process, to change the distance between the upper and lower electrodes, thereby improving the distribution of plasma. However, it still cannot solve the common phenomenon of uneven distribution and immediate unilateral etching during plasma reaction, and this phenomenon has not been significantly improved or improved.

The first purpose of the present invention is to provide a leveling mechanism for vacuum equipment, which aims to solve the technical problems of adjusting the distance between two parts in vacuum equipment and poor airtightness.

To achieve the above-mentioned purpose, the present invention provides a solution: a leveling mechanism for vacuum equipment, the vacuum equipment includes a first component and a second component arranged at a relative interval, the leveling mechanism includes at least one gap adjusting member arranged between the first component and the second component and a sealing bellows arranged on the periphery of the gap adjusting member, the gap adjusting member is arranged along the circumference of the first component and the second component, the gap adjusting member includes a double-layer bolt and a vacuum bellows sleeved on the periphery of the double-layer bolt, the two ends of the double-layer bolt are respectively connected to the first component and the second component, so that the distance between the first component and the second component can be at least partially adjusted by adjusting the double-layer bolt.

Preferably, at least part of the first component and/or at least part of the second component is placed in a vacuum environment.

The second purpose of the present invention is to provide a plasma processing device, which aims to solve the technical problem of the unilateral phenomenon in the existing semiconductor process etching.

To achieve the above-mentioned purpose, the present invention provides a solution: a plasma processing device, comprising: a vacuum reaction chamber, used for the plasma reaction; a lower electrode component, located at the bottom of the vacuum reaction chamber, used for carrying the substrate to be processed; an upper electrode component, arranged opposite to the lower electrode component, used for transporting process gas into the vacuum reaction chamber; the above-mentioned leveling mechanism, used for at least partially adjusting the distance between the upper electrode component and the lower electrode component.

Preferably, the upper electrode element includes a mounting base and a shower head disposed at the bottom of the mounting base, and the mounting base has an inner extension portion extending into the vacuum reaction chamber and an outer extension portion extending outside the vacuum reaction chamber.

Preferably, the plasma processing device further includes a cover plate disposed relatively below the extension portion and a grounding ring disposed on the periphery of the shower head.

Furthermore, the first component includes the mounting base; and/or, the second component includes the cover plate, the grounding ring and the shower head.

Preferably, the double-layer bolt includes a screw having one end extending through the bottom of the cover plate and the other end extending through the top of the extension, a fixing nut provided under the cover plate and connected to the screw, and an adjusting nut provided above the extension and connected to the screw. Both ends of the vacuum bellows and the sealing bellows are connected to the extension and the cover plate, respectively.

Furthermore, sealing rings are provided at the connection points between the two ends of the sealing bellows and the extension and the cover plate respectively; and/or, an elastic gasket is provided between the vertical side wall of the extension and the cover plate.

Preferably, the double-layer bolt includes a screw having one end extending through the extension and connected to the shower head through a screw at the other end, and an adjusting nut disposed above the extension and connected to the screw. The two ends of the vacuum bellows are connected to the extension and the shower head respectively, and the two ends of the sealing bellows are connected to the extension and the grounding ring respectively.

Furthermore, sealing rings are provided at the connection points between the two ends of the sealing bellows and the extension and the grounding ring.

The beneficial effects of the present invention are:

The leveling mechanism for vacuum equipment provided by the present invention is provided with at least one gap adjusting member, wherein, through the combination design of vacuum bellows and double-layer bolts, and the two ends of the double-layer bolts are respectively connected to the first component and the second component, so that the distance between the first component and the second component can be at least partially adjusted by controlling the corresponding double-layer bolts, thereby realizing that the partial distance between the two components is changed by adjusting the corresponding double-layer bolts by providing multiple gap adjusting members in the vacuum equipment. In addition, a sealing bellows is provided on the periphery of the gap adjusting member to prevent gas leakage in the vacuum equipment and ensure airtightness.

100: Vacuum reaction chamber

200: Lower electrode element

300: Upper electrode element

310: Installation base

311: Inner extension

312: Extension Department

320: Shower head

400: Leveling mechanism

410: Gap adjustment piece

411: Double bolts

401: Screw

402: Fixing nut

403: Adjusting nut

412: Vacuum bellows

420: Sealed bellows

500: Cover plate

600: Grounding ring

700: Sealing ring

800: Elastic gasket

In order to more clearly explain the technical solutions in the embodiments of the present invention, the following will briefly introduce the diagrams required for use in the embodiments. Obviously, the diagrams described below are only some embodiments of the present invention. For those with ordinary knowledge in this field, other diagrams can be obtained based on these diagrams without creative work.

FIG1 is a schematic diagram of a structure of a leveling mechanism for vacuum equipment provided in Embodiment 1 of the present invention installed on a plasma processing device; FIG2 is a partial enlarged schematic diagram of A in FIG1; FIG3 is a schematic diagram of the distribution of the gap adjustment member and the sealing bellows provided in Embodiment 1 of the present invention on the cover plate; FIG4 is a schematic diagram of a structure of a leveling mechanism for vacuum equipment provided in Embodiment 2 of the present invention installed on a plasma processing device; FIG5 is a partial enlarged schematic diagram of B in FIG4; FIG6 is a schematic diagram of the distribution of the gap adjustment member and the sealing bellows provided in Embodiment 2 of the present invention on the shower head and the grounding ring.

The following will combine the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons with ordinary knowledge in this field without making progressive efforts are within the scope of protection of the present invention.

It should be noted that all directional indications (such as up, down, left, right, front, back...) in the embodiments of the present invention are only used to explain the relative position relationship and movement status of various components under a certain posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

It should also be noted that when a component is said to be "fixed to" or "set on" another component, it can be directly on the other component or there may be a central component at the same time. When an element is said to be "connected to" another element, it can be directly connected to the other element or there may be a central component at the same time.

In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" can explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of those with ordinary knowledge in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

The leveling mechanism for vacuum equipment provided by the embodiment of the present invention includes at least one gap adjusting member and a sealing bellows arranged on the periphery of the gap adjusting member. The gap adjusting member includes a double-layer bolt and a vacuum bellows sleeved on the periphery of the double-layer bolt. The two ends of the double-layer bolt are respectively connected to the first component and the second component, so that the distance between the first component and the second component can be at least partially adjusted by controlling the double-layer bolt. By setting a plurality of gap adjusting members, the corresponding gap adjusting members can be adjusted to change the distance between the first component and the second component, thereby changing the partial distance between the two components. At the same time, by setting a sealing bellows on the periphery of the gap adjusting member, the gap generated by the movement between the first component and the second component caused by adjusting the gap adjusting member is sealed to prevent leakage of the reaction gas in the vacuum equipment and ensure airtightness.

The first component and/or the second component are at least partially in the vacuum environment, so that the gap adjusting member can connect the first component and the second component located outside the vacuum environment, or directly connect the first component and the second component located inside the vacuum environment, so that no matter whether the gap adjusting member connects the two components outside the vacuum environment or the two components inside the vacuum environment, the airtightness of the vacuum device can be further maintained.

Implementation Example 1:

As shown in FIG. 1 , the plasma processing apparatus provided in the first embodiment of the present invention includes a vacuum reaction chamber 100 , a lower electrode component 200 , an upper electrode component 300 , and a leveling mechanism 400 . The vacuum reaction chamber 100 is used for plasma reaction, the lower electrode component 200 is located at the bottom of the vacuum reaction chamber 100 and is used to carry the substrate to be processed, the upper electrode component 300 is arranged opposite to the lower electrode component 200 and is used to transport process gas into the vacuum reaction chamber 100, and the leveling mechanism 400 is used to adjust the distance between the two components located on the plasma processing device, thereby driving the upper electrode component 300 to move up and down relative to the lower electrode component 200, thereby at least partially adjusting the distance between the upper electrode component 300 and the lower electrode component 200.

As shown in FIG. 1 , the upper electrode element 300 includes a mounting base 310 and a shower head 320 disposed at the bottom of the mounting base 310. The mounting base 310 has an inner extension 311 extending into the vacuum reaction chamber 100 and an outer extension 312 extending outside the vacuum reaction chamber 100. Specifically, the process gas is transported from the shower head 320 into the vacuum reaction chamber 100. The design of the shower head 320 allows the gas to be transported to the vacuum reaction chamber 100 over a wide and uniform distribution area.

The plasma processing device also includes a cover plate 500 disposed relatively below the extension portion 312 and a grounding ring 600 disposed on the periphery of the shower head 320. The cover plate 500 and the grounding ring 600 are both fixedly mounted on the plasma processing device.

The first component includes a mounting base 310, and the second component includes a cover plate 500, a grounding ring 600, and a shower head 320.

Specifically, the gap adjustment element is connected between the extension 312 of the mounting base 310 and the cover 500, and the sealing bellows 420 is disposed on the periphery of the gap adjustment element 410 and connected between the extension 312 of the mounting base 310 and the cover 500. In this way, the gap adjustment element 410 can be fixed by connecting the gap adjustment element 410 with the cover 500, and the gap adjustment element 410 can be connected with the extension 312 to control the extension 312 to drive at least part of the shower head 320 to move up and down relative to the lower electrode by adjusting the gap adjustment element 410, so that the distance between at least part of the shower head 320 and the lower electrode can be changed, so as to achieve uniform distribution of plasma during semiconductor etching reaction.

2 , the double-layer bolt 411 includes a screw rod 401 having one end extending through the bottom of the cover plate 500 and the other end extending through the top of the extension portion 312, a fixing nut 402 disposed under the cover plate 500 and connected to the screw rod 401, and an adjusting nut 403 disposed above the extension portion 312 and connected to the screw rod 401. Both ends of the vacuum bellows 412 and the sealing bellows 420 are connected to the extension portion 312 and the cover plate 500, respectively. The gap adjusting member 410 can be fixed on the cover plate 500 through the coordinated use of the screw 401 and the fixing nut 402. The screw 401, the adjusting nut 403 and the vacuum bellows 412 can be used to adjust the movement of the extension 312 of the mounting base 310 through the adjusting nut 403, thereby driving the shower head 320 to move up and down relative to the lower electrode element 200, thereby changing the distance between the shower head 320 and the lower electrode element 200. The setting of the sealing bellows 420 can prevent the leakage of the reaction gas caused by the up and down movement of the shower head 320 relative to the lower electrode element 200 when adjusting the gap adjusting member 410, thereby ensuring the airtightness of the processing device.

The two ends of the vacuum bellows 412 and the sealing bellows 420 are respectively connected to the extension 312 of the mounting base 310 and the cover plate 500 by screws. Thus, the vacuum bellows 412 and the sealing bellows 420 can be detachably connected between the extension 312 and the cover plate 500 by screw connection, so that the vacuum bellows 412 and the sealing bellows 420 can be replaced easily if they are damaged due to long-term use or improper operation.

It should be noted that the connection method between the ends of the vacuum bellows 412 and the sealing bellows 420 and the extension 312 of the mounting base 310 and the cover plate 500 is not limited to screw connection. As long as the ends of the vacuum bellows 412 and the sealing bellows 420 can be fixedly connected between the extension 312 and the cover plate 500, other methods can be replaced.

As a preferred solution of this embodiment, referring to FIG. 3 , three gap adjusting members 410 are equidistantly arranged along the circumferential direction between the extension 312 of the mounting base 310 and the cover plate 500, and a sealing bellows 420 is arranged outside the circumference formed by the three gap adjusting members 410. By equidistantly arranging the three gap adjusting members 410, at least part of the spray structure in multiple directions can be adjusted. The lower electrode element 200 moves up and down to change the distance between the spray structure and the lower electrode element 200, so that the problem of uneven plasma distribution can be solved by adjusting the gap adjustment member 410 at the corresponding position during semiconductor etching. At the same time, a sealing bellows 420 is set around the three gap adjustment members 410 to ensure the airtightness of the entire plasma reactor device.

It should be pointed out that in a specific application, the number of gap adjusting members 410 equidistantly distributed along the circumferential direction is not limited to three, and can be more than three, as long as the corresponding gap adjusting members 410 can be adjusted during the semiconductor etching reaction so that the plasma distribution in the corresponding area can be adjusted uniformly.

In addition, when the plasma distribution is uneven, the corresponding gap adjusting members 410 can be set to adjust the distance between the local position of the shower head 320 and the lower electrode element 200, so as to achieve the leveling effect of the entire device and also achieve the plasma change at a certain local position.

It should be pointed out that in practical applications, the arrangement of multiple gap adjusting members 410 is not limited to being arranged equidistantly in the circumferential direction, and any position that can meet the requirements for regulating the plasma distribution is acceptable.

As shown in FIG. 2 , sealing rings 700 are provided outside the screw connections between the two ends of the sealing bellows 420 and the extension 312 and the cover plate 500. The sealing rings 700 can seal the gap between the extension 312 of the mounting base 310 and the cover plate 500 and the screw connection between the sealing bellows 420, thereby further improving the airtightness of the device.

The sealing ring 700 is an O-ring, which can make the O-ring larger as the pressure increases when the gap adjustment member 410 is adjusted, thereby increasing the sealing effect between the sealing bellows 420 and the extension 312 and the cover plate 500.

As shown in FIG. 2 , an elastic gasket 800 is provided between the vertical side wall of the extension part 312 and the cover plate 500. The provision of the elastic gasket 800 can improve the situation that the distance between the shower head 320 and the lower electrode element 200 cannot be adjusted by adjusting the gap adjusting member 410 due to the excessive contact area between the vertical side wall of the extension part 312 and the cover plate 500 when adjusting the gap adjusting member 410, thereby avoiding damage to the extension part 312 and the cover plate 500 due to contact friction between the side wall of the extension part 312 and the cover plate 500.

The plasma reaction device provided in the first embodiment of the present invention is to arrange a plurality of gap adjusting members 410 equidistantly along the circumferential direction between the extension 312 of the mounting base 310 and the cover plate 500, and to arrange a sealing bellows 420 on the circumference formed by the plurality of gap adjusting members 410. In this way, during the semiconductor etching reaction, if the plasma distribution in a certain part of the vacuum chamber is uneven, the gap adjusting member 420 corresponding to the unevenly distributed part of the plasma can be adjusted. The plasma distribution is improved by using the joint 410. The specific operation is as follows: first, the adjustment nut 403 above the extension 312 is rotated to adjust the extension 312 to drive the local part of the shower head 320 to move up and down relative to the lower electrode element 200. Then, the slight displacement change of the local part of the shower head 320 relative to the lower electrode element 200 can cause the plasma distribution to change, thereby improving the uneven distribution of the plasma. In some processes, in order to obtain uniformity of substrate processing in different regions, the gap between the shower head 320 and the lower electrode element 200 can be changed by adjusting the double-layer bolts 411 at different positions, thereby adjusting the plasma distribution here, as an additional adjustable variable, to adjust the uniformity of substrate processing in different regions, not limited to adjusting only the uniform distribution of plasma. At the same time, a sealing bellows 420 is set on the outer periphery of the circle formed by multiple gap adjusting members 410 to seal the gap generated by the gap adjusting members 410 between the mounting base 310 and the cover plate 500, so as to prevent the gas in the vacuum chamber from leaking out, thereby ensuring the airtightness of the device and achieving a better semiconductor etching reaction effect.

Embodiment 2:

The difference between this embodiment and the first embodiment is that the gap adjustment member 410 and the sealing bellows 420 are arranged at different positions, which is specifically embodied in: as shown in FIG4 , the plasma processing device provided in the second embodiment of the present invention, the adjusting nut 403 includes a screw 401 having one end extending through the top of the extension portion 312 and the other end connected to the shower head 320 by a screw, the adjusting nut 403 being arranged above the extension portion 312 and connected to the screw 401, the two ends of the vacuum bellows 412 being connected to the extension portion 312 and the shower head 320 respectively, and the two ends of the sealing bellows 420 being connected to the extension portion 312 and the grounding ring 600 respectively. The lower end of the screw 401 is screwed into the shower head 320 to fix the gap adjustment member 410 on the shower head 320, so as not to damage the structure of the shower head 320 and thus affect the etching effect. The gap adjustment member 410 can be used to adjust the spray through the coordination of the screw 401, the adjustment nut 403 and the vacuum bellows 412. The head 320 moves up and down relative to the lower electrode element 200, thereby changing the distance between the shower head 320 and the lower electrode element 200. The setting of the sealing bellows 420 can prevent the leakage of the reaction gas caused by the up and down movement of the shower head 320 relative to the lower electrode element 200 when adjusting the gap adjustment member 410, thereby ensuring the airtightness of the device.

The two ends of the vacuum bellows 412 are connected to the extension 312 and the shower head 320 by screws, and the two ends of the sealing bellows 420 are connected to the extension 312 and the grounding ring 600 by screws. In this way, the vacuum bellows 412 can be detachably connected between the extension 312 and the shower head 320 by screws, and the sealing bellows 420 can be detachably connected between the extension 312 and the grounding ring 600 by screws, so that the vacuum bellows 412 and the sealing bellows 420 damaged by long-term use or improper operation can be replaced.

It should be noted that the connection method between the two ends of the vacuum bellows 412 and the sealing bellows 420 and the extension 312 and the shower head 320 or the grounding ring 600 is not limited to screw connection. As long as the two ends of the vacuum bellows 412 and the sealing bellows 420 can be fixedly connected between the extension 312 and the shower head 320 or the grounding ring 600, other methods can be replaced.

As a preferred solution of this embodiment, referring to FIG. 6 , three gap adjusting members 410 are equidistantly arranged along the circumferential direction between the grounding ring 600 and the extension portion 312, and a sealing bellows 420 is arranged outside the circumference formed by the three gap adjusting members 410. By equidistantly arranging the three gap adjusting members 410, it is possible to adjust at least a portion of the shower head 320 in multiple directions relative to the shower head 320. The lower electrode element 200 moves up and down to change the distance between the shower head 320 and the lower electrode element 200, so that the problem of uneven plasma distribution can be solved by adjusting the gap adjustment member 410 at the corresponding position during semiconductor etching. At the same time, a sealing bellows 420 is set around the three gap adjustment members 410 to ensure the airtightness of the entire plasma reactor device. It is easy to understand that the number of gap adjustment members 410 can be one or more. When the number of gap adjustment members 410 is greater than 2, the distances between them can be equal or unequal according to the process requirements.

It should be pointed out that in a specific application, the number of gap adjusting members 410 equidistantly distributed along the circumferential direction is not limited to three, and can be more than three, as long as the corresponding gap adjusting members 410 can adjust the plasma distribution in the corresponding area during the semiconductor etching reaction.

As shown in FIG5 , sealing rings 700 are provided outside the screw connections between the two ends of the sealing bellows 420 and the extension 312 and the grounding ring 600. The sealing rings 700 can seal the gaps between the extension 312 and the grounding ring 600 and the sealing bellows 420, further improving the airtightness of the device.

The sealing ring 700 is an O-ring, which can make the O-ring larger as the pressure increases when the gap adjustment member 410 is adjusted, thereby increasing the sealing effect between the sealing bellows 420 and the extension 312 and the grounding ring 600.

The plasma reaction device provided in the second embodiment of the present invention is to set a plurality of gap adjusting members 410 along the circumferential direction between the shower head 320 and the extension part 312, and to set a sealing bellows 420 between the extension part 312 and the grounding ring 600 on the circumference of the circumference formed by the plurality of gap adjusting members 410. In this way, during the semiconductor etching reaction, if the plasma distribution in a certain part of the vacuum chamber is uneven, the uneven distribution part of the plasma can be adjusted. The gap adjusting member 410 corresponding to the position is used to improve the distribution of plasma. The specific operation is as follows: first, the adjusting nut 403 above the rotating extension 312 is used to adjust the up and down movement of the local part of the shower head 320 relative to the lower electrode element 200. Then, a slight displacement change of the local part of the shower head 320 relative to the lower electrode element 200 can lead to a significant change in the plasma distribution, thereby improving the uneven distribution of plasma. In some processes, in order to obtain uniform substrate processing in different regions, the gap between the shower head 320 and the lower electrode element 200 can be changed by adjusting the double-layer bolts 411 at different positions, thereby adjusting the plasma distribution therein, and adjusting the substrate processing uniformity in different regions as an additional adjustable variable, not limited to adjusting only the uniform distribution of plasma. At the same time, a sealing bellows 420 is provided between the outer extension 312 of the circumference formed by the plurality of gap adjusting members 410 and the grounding ring 600 to seal the gap generated by the gap adjusting members 410 between the shower head 320 and the outer extension 312, thereby preventing the gas in the vacuum reaction chamber 100 from leaking out, thereby ensuring the airtightness of the plasma processing device and achieving a better semiconductor etching reaction effect.

The above is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made using the contents of the present invention's specification and drawings, or direct/indirect application in other related technical fields, are included in the patent protection scope of the present invention.

In summary, this case shows technical features that are different from the known in terms of purpose, means and effect. It is also the first invention that is practical and meets the patent requirements for invention. We sincerely ask the review committee to carefully examine this and grant the patent as soon as possible to benefit the society.

100: Vacuum reaction chamber

200: Lower electrode element

300: Upper electrode element

310: Installation base

311: Inner extension

312: Extension Department

320: Shower head

400: Leveling mechanism

410: Gap adjustment piece

420: Sealed bellows

500: Cover plate

600: Grounding ring

Claims (8)

A plasma processing device comprises: a vacuum reaction chamber for a plasma reaction; a lower electrode element located at the bottom of the vacuum reaction chamber and used to carry a substrate to be processed; an upper electrode element arranged opposite to the lower electrode element, the upper electrode element comprising a first component and a second component arranged opposite to each other and spaced apart, and used to transport a process gas into the vacuum reaction chamber; and a leveling mechanism, the leveling mechanism comprising at least one gap adjusting member arranged between the first component and the second component and a sealing bellows arranged on the periphery of the gap adjusting member, the gap adjusting member being arranged along the periphery of the first component and the second component. The gap adjusting member is arranged in a direction, the gap adjusting member includes a double-layer bolt and a vacuum bellows sleeved on the outer periphery of the double-layer bolt, and the two ends of the double-layer bolt are respectively connected to the first component and the second component, so that the distance between the first component and the second component can be at least partially adjusted by adjusting the double-layer bolt, thereby at least partially adjusting the distance between the upper electrode component and the lower electrode component; wherein the first component of the upper electrode component includes a mounting base, the second component includes a shower head arranged at the bottom of the mounting base, and the mounting base has an inner extension portion extending into the vacuum reaction chamber and an outer extension portion extending outside the vacuum reaction chamber. A plasma processing apparatus as described in claim 1, wherein the first component and/or the second component is at least partially placed in a vacuum environment. The plasma processing device as described in claim 1, wherein the plasma processing device further includes a cover plate disposed relatively below the extension portion and a grounding ring disposed on the periphery of the shower head. The plasma processing device as described in claim 3, wherein the second component further includes the cover plate and the grounding ring. The plasma processing device as described in claim 4, wherein the double-layer bolt includes a screw having one end extending through the bottom of the cover plate and the other end extending through the top of the extension, a fixing nut provided under the cover plate and connected to the screw, and an adjusting nut provided above the extension and connected to the screw, and both ends of the vacuum bellows and the sealing bellows are connected to the extension and the cover plate, respectively. The plasma processing device as described in claim 5, wherein a sealing ring is provided at the connection between the two ends of the sealing bellows and the extension part and the cover plate respectively; and/or, an elastic gasket is provided between the vertical side wall of the extension part and the cover plate. The plasma processing device as described in claim 4, wherein the double-layer bolt includes a screw having one end extending through the extension and connected to the shower head through a screw at the other end, and an adjustment nut disposed above the extension and connected to the screw, the two ends of the vacuum bellows are respectively connected to the extension and the shower head, and the two ends of the sealing bellows are respectively connected to the extension and the grounding ring. A plasma processing device as described in claim 7, wherein a sealing ring is provided at the connection between the two ends of the sealing bellows and the extension and the grounding ring.