TW202139320A - Leveling mechanism for vacuum equipment and plasma processing device - Google Patents

Abstract

The invention is suitable for the field of semiconductor etching, and discloses a leveling mechanism for vacuum equipment and a plasma processing device. The leveling mechanism for the vacuum equipment comprises at least one gap adjusting piece and a sealing corrugated pipe arranged on the periphery of the gap adjusting piece, wherein the gap adjusting piece comprises a double-layer bolt and a vacuum corrugated pipe arranged on the periphery of the double-layer bolt in a sleeving mode, and the two ends of the double-layer bolt are connected with the first component and the second component respectively. According to the invention, through the arrangement of a plurality of gap adjusting pieces, specifically through the combined design of vacuum corrugated pipes and double-layer bolts, the distance between the first component and the second component can be at least partially adjusted by adjusting and controlling the corresponding double-layer bolts, so that the partial distance between the two components is changed by arranging the plurality of gap adjusting pieces in the vacuum equipment to adjust the corresponding double-layer bolts; and the sealing corrugated pipes are arranged on the peripheries of the gap adjusting pieces, so that gas leakage in the vacuum equipment is prevented, and gas tightness is guaranteed.

Description

Leveling mechanism and plasma processing device for vacuum equipment

The present invention relates to the technical field of semiconductor etching, in particular to a leveling mechanism and a plasma processing device for vacuum equipment.

The production process of semiconductor devices needs to be completed in a variety of semiconductor production equipment. Among them, semiconductor production equipment includes vacuum processing equipment. Vacuum equipment refers to processing equipment that processes semiconductor substrates under vacuum or reduced pressure. Existing adjustments The distance between components is used in vacuum equipment. For example, in the semiconductor etching process, it is used to change the distance between the upper and lower electrodes to improve the plasma distribution, but it still cannot solve the common plasma reaction. The uneven distribution is the phenomenon of unilateral etching, and this phenomenon has not been significantly improved or improved.

The first object of the present invention is to provide a leveling mechanism for vacuum equipment, which aims to solve the technical problems of adjusting the distance between two parts and poor air tightness in the vacuum equipment.

In order to achieve the above objective, the solution provided by the present invention is:

A leveling mechanism for vacuum equipment. The leveling mechanism includes at least one gap adjusting member and a sealed bellows arranged on the outer circumference of the gap adjusting member. The gap adjusting member includes a double-layer bolt and sleeved on the outer circumference of the double-layer bolt In the vacuum bellows, the two ends of the double-layer bolt are respectively connected to the first part and the second part, so that the distance between the first part and the second part can be adjusted at least partially by adjusting the double-layer bolt.

Preferably, at least part of the first part and/or at least part of the second part is placed in a vacuum environment.

The second object of the present invention is to provide a plasma processing device, which aims to solve the technical problem of unilateral phenomenon in the etching of the existing semiconductor process.

In order to achieve the above objective, the solution provided by the present invention is:

A plasma processing device includes:

A vacuum reaction chamber for the plasma reaction;

The lower electrode assembly is located at the bottom of the vacuum reaction chamber and is used to carry the substrate to be processed;

The upper electrode element is arranged opposite to the lower electrode assembly, and is used for conveying process gas into the vacuum reaction chamber;

The above-mentioned leveling mechanism is used to at least partially adjust the distance between the upper electrode element and the lower electrode element.

Preferably, the upper electrode assembly includes a mounting base and a shower head arranged at the bottom of the mounting base, and the mounting base has an inner extension part extending in the vacuum reaction chamber and an extension part extending outside the vacuum reaction chamber. Extension Department.

Preferably, the plasma processing device further includes a cover plate arranged opposite to the extension part and a grounding ring arranged on the outer periphery of the shower head.

Further, the first component includes the mounting base; and/or,

The second component includes the cover plate, the ground ring and the shower head.

Preferably, the double-layer bolt includes a screw rod with one end extending under the cover plate and the other end extending through the outer extension part, a fixing nut disposed under the cover plate and connected with the screw rod, and provided on the An adjusting nut above the extension part and connected with the screw, both ends of the vacuum bellows and the sealing bellows are respectively connected with the extension part and the cover plate.

Further, sealing rings are provided at the connections between the two ends of the sealing bellows and the extension part and the cover plate; and/or,

An elastic gasket is arranged between the vertical side wall of the extension part and the cover plate.

Preferably, the double-layer bolt includes a screw with one end extending through the extension portion and the other end connected to the shower head through a screw, and an adjusting nut located above the extension portion and connected with the screw. The vacuum corrugated The two ends of the pipe are respectively connected with the extension part and the shower head, and the two ends of the sealing bellows are respectively connected with the extension part and the ground ring.

Further, a sealing ring is provided at the connection between the two ends of the sealing bellows and the extension part and the ground ring.

The beneficial effects of the present invention are:

The leveling mechanism for vacuum equipment provided by the present invention is provided by arranging at least one gap adjusting member, wherein the combined design of the vacuum bellows and the double-layer bolt is adopted, and the two ends of the double-layer bolt are respectively connected to the first part and the second part. The component enables the distance between the first component and the second component to be adjusted at least partially by controlling the corresponding double-layer bolts, so that the two components can be changed by adjusting the corresponding double-layer bolts by setting multiple gap adjusters in the vacuum equipment In addition, a sealing bellows is arranged on the outer circumference of the gap adjusting member to prevent gas leakage in the vacuum equipment and ensure air tightness.

The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary knowledge in the field without making progressive work fall within the protection scope of the present invention.

It should be noted that all directional indicators (such as up, down, left, right, front, back...) in the embodiments of the present invention are only used to explain the relative relationship between the components in a certain posture (as shown in the figure). If the position relationship, movement situation, etc. change, the directional indication will change accordingly.

It should also be noted that when an element is referred to as being "fixed on" or "disposed on" another element, it can be directly on the other element or there may be a centered element at the same time. When an element is said to be "connected" to another element, it can be directly connected to another element or a central element may exist at the same time.

In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the realization of those with ordinary knowledge in the field. When the combination of technical solutions is contradictory or impossible to achieve, it should be considered as a combination of such technical solutions. It does not exist, nor does it fall within the scope of protection claimed by the present invention.

The leveling mechanism for vacuum equipment provided by the embodiment of the present invention includes at least one gap adjusting member and a sealed bellows arranged on the outer circumference of the gap adjusting member. The gap adjusting member includes a double-layer bolt and a vacuum sleeved on the outer circumference of the double-layer bolt. Bellows, the two ends of the double-layer bolt are respectively connected to the first part and the second part, so that the distance between the first part and the second part can be adjusted at least partly by controlling the double-layer bolt, and the distance between the first part and the second part can be adjusted at least partially by controlling the double-layer bolt. Correspondingly adjust the corresponding gap adjuster to change the distance between the first part and the second part, thereby changing part of the distance between the two parts. At the same time, a sealing bellows is set on the outer periphery of the gap adjuster to seal the gap due to adjustment. The adjusting member makes the gap created by the movement between the first part and the second part to prevent the leakage of the reaction gas in the vacuum equipment and ensure the air tightness.

Wherein, the first part and/or the second part are at least partially in a vacuum environment. In this way, the gap adjuster can connect the first part and the second part located outside the vacuum environment, or directly connect the second part located inside the vacuum environment. The first part and the second part make it possible to further maintain the airtightness of the vacuum equipment regardless of whether the gap adjusting member is connected to the two parts in the outer part of the vacuum environment and the two parts in the vacuum environment.

Example one:

As shown in FIG. 1, the plasma processing apparatus provided by the first embodiment of the present invention includes a vacuum reaction chamber 100, a lower electrode element 200, an upper electrode element 300 and a leveling mechanism 400. Wherein, the vacuum reaction chamber 100 is used for plasma reaction, the bottom electrode assembly 200 is located at the bottom of the vacuum reaction chamber 100 and is used to carry the substrate to be processed, and the upper electrode element 300 and the lower electrode element 200 are arranged opposite to each other and are used to face the vacuum reaction chamber. The process gas is transported in 100, and the leveling mechanism 400 is used to adjust the distance between the two components on the plasma processing device, and then drive the upper electrode element 300 to move up and down relative to the lower electrode element 200, so as to achieve at least partial adjustment of the upper electrode The distance between the element 300 and the lower electrode element 200.

1, the upper electrode assembly 300 includes a mounting base 310 and a shower head 320 provided at the bottom of the mounting base 310. The mounting base 310 has an inner extension 311 extending in the vacuum reaction chamber 100 and The extension part 322 outside the vacuum reaction chamber 100. Specifically, the process gas is transported from the shower head 320 into the vacuum reaction chamber 100. The design of the shower head 320 allows the gas to be delivered to the vacuum reaction chamber 100 with a wide distribution area and uniform distribution.

The plasma processing apparatus further includes a cover plate 500 disposed opposite to the extension portion 322 and a ground ring 600 disposed on the outer periphery of the shower head 320. The cover plate 500 and the ground ring 600 are both fixed on the plasma processing device.

Wherein, the first component includes a mounting base 310, and the second component includes a cover plate 500, a ground ring 600 and a shower head 320.

Specifically, the gap adjustment element is connected between the extension portion 322 of the mounting base 310 and the cover plate 500, and the sealing bellows 420 is arranged on the outer periphery of the gap adjustment member 410 and connected to the extension portion 322 and the cover plate 500 of the mounting base 310 In this way, the gap adjusting member 410 can be fixed through the connection between the gap adjusting member 410 and the cover 500, and the gap adjusting member 410 and the extension portion 322 can be connected to control the extension portion 322 to drive the shower head through the gap adjusting member 410. At least part of 320 moves up and down with respect to the lower electrode, so that the distance between at least part of shower head 320 and the lower electrode can be changed to achieve uniform plasma distribution during semiconductor etching reaction.

2, the double-layer bolt 411 includes a screw 401 with one end extending under the cover plate 500 and the other end extending over the extension portion 322, and a fixing nut 402 disposed under the cover plate 500 and connected with the screw 401 , An adjusting nut 403 arranged above the extension part 322 and connected with the screw 401, the two ends of the vacuum bellows 412 and the sealing bellows 420 are respectively connected with the extension part 322 and the cover plate 500. Through the use of the screw 401 and the fixing nut 402, the gap adjusting member 410 can be fixed on the cover plate 500. Through the use of the screw 401, the adjusting nut 403, and the vacuum bellows 412, the installation can be adjusted through the adjusting nut 403. The extension portion 322 of the base 310 moves, thereby driving the shower head 320 to move up and down relative to the lower electrode assembly 200, thereby changing the distance between the shower head 320 and the lower electrode element 200. The arrangement of the sealing bellows 420 can prevent When the gap adjusting member 410 is adjusted, the shower head 320 moves up and down relative to the lower electrode assembly 200 to cause the leakage of the reaction gas, which ensures the airtightness of the processing device.

Wherein, both ends of the vacuum bellows 412 and the sealing bellows 420 are respectively connected to the extension part 322 of the mounting base 310 and the cover plate 500 by means of screws. In this way, the means of connection by means of screws can make the vacuum bellows 412 and sealing The bellows 420 is detachably connected between the extension portion 322 and the cover plate 500 to facilitate the replacement of the vacuum bellows 412 and the sealing bellows 420 that are damaged due to long-term use or improper operation.

It should be pointed out that the connection between both ends of the vacuum bellows 412 and the sealing bellows 420 and the extension part 322 of the mounting base 310 and the cover plate 500 is not limited to screw connection, as long as the vacuum bellows 412 and sealing can be realized. Other ways in which both ends of the corrugated tube 420 can be fixedly connected between the extension portion 322 and the cover plate 500 can be replaced.

As a preferred solution of this embodiment, as shown in FIG. 3, three gap adjustment members 410 are arranged equidistantly in the circumferential direction between the extension portion 322 of the mounting base 310 and the cover plate 500, and the three gap adjustment members 410 A sealed bellows 420 is provided on the outer side of the circumference formed by the member 410, and at least part of the spray structure that adjusts multiple orientations can be adjusted through the equidistant arrangement of the three gap adjusting members 410 to move up and down relative to the lower electrode element 200 to change the spray structure The distance between the lower electrode element 200 and the lower electrode element 200 can solve the problem of uneven plasma distribution by adjusting the gap adjustment member 410 at the corresponding position during semiconductor etching. At the same time, a sealing corrugation can be provided on the outer periphery of the three gap adjustment members 410 The tube 420 ensures the airtightness of the entire plasma reactor device.

It should be pointed out that in specific applications, the number of gap adjusting members 410 equally spaced along the circumferential direction is not limited to three, but can also be more than three, as long as the corresponding gap adjusting members can be adjusted during the semiconductor etching reaction. 410 can adjust the plasma distribution in the corresponding area to be uniform.

In addition, when the plasma is not uniformly distributed, the arrangement of a plurality of gap adjusting members 410 can adjust the corresponding gap adjusting member 410 to adjust the distance between the local position of the shower head 320 and the lower electrode element 200, which can realize the overall device The leveling function can also realize the plasma change of a certain local position.

It should be pointed out that in practical applications, the arrangement of the plurality of gap adjusting members 410 is not limited to being equidistantly arranged in the circumferential direction, and any position that can meet the requirements of adjusting the plasma distribution can be satisfied.

As shown in FIG. 2, a sealing ring 700 is provided at the screw connection between the two ends of the sealing bellows 420 and the extension part 322 and the cover plate 500 respectively, and the extension part 322 of the mounting base 310 can be sealed through the setting of the sealing ring 700 The gap created by the screw connection between the cover plate 500 and the sealing bellows 420 further improves the air tightness of the device.

Among them, the sealing ring 700 is an O-shaped sealing ring, which can make the O-shaped sealing ring larger as the pressure increases when the gap adjuster 410 is adjusted, thereby increasing the sealing bellows 420 and the extension portion 322 and the cover plate. Sealing effect between 500.

Referring to FIG. 2, an elastic gasket 800 is provided between the vertical side wall of the extension part 322 and the cover 500. The arrangement of the elastic gasket 800 can improve the vertical side wall and the cover of the extension part 322 when the gap adjusting member 410 is adjusted. The contact area between the plates 500 is too large, which makes it impossible to adjust the distance between the shower head 320 and the lower electrode element 200 through the gap adjusting member 410, so as to avoid damage to the extension due to contact and friction between the side wall of the extension portion 322 and the cover plate 500部322和盖板500。 Section 322 and cover 500.

The plasma reaction device provided by the first embodiment of the present invention is formed by setting a plurality of gap adjusting members 410 equidistantly in the circumferential direction between the extension portion 322 of the mounting base 310 and the cover plate 500, and forming the plurality of gap adjusting members 410 A sealed bellows 420 is arranged on the outer circumference of the circumference. In this way, if the plasma distribution in a certain part of the vacuum chamber is uneven during the semiconductor etching reaction, the plasma can be improved by adjusting the gap adjusting member 410 corresponding to the uneven plasma distribution part. The specific operation is as follows: First, adjust the extension portion 322 by rotating the adjusting nut 403 above the extension portion 322 to drive the local part of the shower head 320 to move up and down with respect to the lower electrode element 200, and then the local part of the shower head 320 is opposed to each other. A slight change in the displacement of the bottom electrode element 200 can cause a change in the plasma distribution, thereby improving the uneven plasma distribution. In some manufacturing processes, in order to obtain the uniformity of the substrate processing in different regions, the gap between the shower head 320 and the bottom electrode element 200 can be changed by adjusting the double-layer bolts 411 in different positions, thereby adjusting the plasma here. The distribution is used as an additional adjustable variable to adjust the uniformity of the substrate processing in different regions, and is not limited to only adjusting the uniform distribution of the plasma. At the same time, a sealing bellows 420 is provided on the outer circumference of the circumference formed by the plurality of gap adjusting members 410 to seal the gap generated between the installation base 310 and the cover plate 500 of the gap adjusting member 410 to prevent gas leakage in the vacuum chamber. Out, the air tightness of the device is ensured, and the semiconductor etching reaction effect can be better.

Embodiment two:

The difference between this embodiment and the first embodiment lies in the different positions of the gap adjusting member 410 and the sealing bellows 420, which are specifically embodied in:

As shown in FIG. 4, in the plasma processing apparatus provided by the second embodiment of the present invention, the adjusting nut 403 includes a screw 401112 with one end extending through the extension portion 322 and the other end connected to the shower head 320 through a screw. The adjusting nut 403 above the 322 and connected with the screw 401, the two ends of the vacuum bellows 412 are respectively connected with the extension part 322 and the shower head 320, and the two ends of the sealing bellows 420 are connected with the extension part 322 and the grounding ring 600 respectively. The lower end of the screw 401 is embedded in the spray head 320 through screws to fix the gap adjustment member 410 on the spray head 320, so that the structure of the spray head 320 will not be damaged, and the etching effect will be affected. Through the screw 401, the adjustment The combination of the nut 403 and the vacuum bellows 412 can adjust the spray head 320 to move up and down relative to the lower electrode assembly 200 through the gap adjusting member 410, thereby changing the distance between the spray head 320 and the lower electrode element 200 The arrangement of the sealing bellows 420 can prevent the reaction gas from leaking due to the up and down movement of the shower head 320 relative to the lower electrode assembly 200 when the gap adjusting member 410 is adjusted, and the air tightness of the device is ensured.

The two ends of the vacuum bellows 412 are respectively connected to the extension part 322 and the shower head 320 through screws, and the two ends of the sealing bellows 420 are respectively connected to the extension part 322 and the grounding ring 600 through screws. The vacuum bellows 412 can be detachably connected between the extension part 322 and the shower head 320, and the sealing bellows 420 can be detachably connected between the extension part 322 and the grounding ring 600 through the screw connection, which is convenient Replace the vacuum bellows 412 and the sealing bellows 420 that are damaged due to excessive use or improper operation.

It should be pointed out that the connection between both ends of the vacuum bellows 412 and the sealing bellows 420 and the extension part 322 and the sprinkler head 320 or the grounding ring 600 is not limited to screw connection, as long as the vacuum bellows 412 and sealing can be realized. The two ends of the corrugated tube 420 can be fixedly connected between the extension part 322 and the shower head 320 or the grounding ring 600 in other ways, which can be replaced.

As a preferred solution of this embodiment, as shown in FIG. 6, three gap adjustment members 410 are arranged equidistantly in the circumferential direction between the ground ring 600 and the extension portion 322 and the circumference formed by the three gap adjustment members 410 A sealed bellows 420 is provided on the outside, and at least part of the shower head 320 that can adjust multiple orientations can be adjusted up and down relative to the lower electrode element 200 through the equidistant arrangement of the three gap adjusting members 410, thereby changing the shower head 320 and the lower electrode. The distance between the components 200 can solve the problem of uneven plasma distribution by adjusting the gap adjustment member 410 at the corresponding position during semiconductor etching. At the same time, it can be ensured by setting a sealed bellows 420 on the periphery of the three gap adjustment members 410 The airtightness of the entire plasma reactor device is improved. It is easy to understand that the number of the gap adjusting members 410 may be one or more than one. When the number of the gap adjusting members 410 is greater than 2, the distances between each other may be equal, or may be set to be unequal according to process requirements.

It should be pointed out that in specific applications, the number of gap adjusting members 410 equally spaced along the circumferential direction is not limited to three, but can also be more than three, as long as the corresponding gap adjusting members can be adjusted during the semiconductor etching reaction. 410 can adjust the plasma distribution in the corresponding area.

5, the two ends of the sealing bellows 420 are respectively connected with the outer extension portion 322 and the grounding ring 600 at the screw connection location with a sealing ring 700, through the setting of the sealing ring 700 can seal the extension portion 322 and the grounding ring 600 and The gap created by the screw connection of the sealing bellows 420 further improves the air tightness of the device.

Among them, the sealing ring 700 is an O-shaped sealing ring, which can make the O-shaped sealing ring larger as the pressure increases when the gap adjuster 410 is adjusted, thereby increasing the sealing bellows 420 and the extension part 322 and the grounding ring The sealing effect between 600.

In the plasma reaction device provided in the second embodiment of the present invention, a plurality of gap adjustment members 410 are arranged in the circumferential direction between the shower head 320 and the extension portion 322, and the outer circumference extension portion 322 formed by the plurality of gap adjustment members 410 A sealed bellows 420 is provided between the ground ring 600 and the semiconductor etching reaction. If the plasma distribution in a certain part of the vacuum chamber is uneven during the semiconductor etching reaction, the gap adjustment member corresponding to the uneven plasma distribution part can be adjusted. 410 to improve the distribution of plasma, the specific operation is: firstly, by rotating the adjusting nut 403 above the extension part 322, the local part of the shower head 320 is adjusted to move up and down relative to the lower electrode element 200, and then the local part of the shower head 320 is opposite to each other. A slight change in the displacement of the lower electrode element 200 can lead to a large change in the plasma distribution, thereby improving the uneven plasma distribution. In some manufacturing processes, in order to obtain the uniformity of the substrate processing in different regions, the gap between the shower head 320 and the bottom electrode element 200 can be changed by adjusting the double-layer bolts 411 in different positions, thereby adjusting the plasma here. The distribution is used as an additional adjustable variable to adjust the uniformity of the substrate processing in different regions, and is not limited to only adjusting the uniform distribution of the plasma. At the same time, a sealing bellows 420 is provided between the outer circumferential extension portion 322 formed by the plurality of gap adjustment members 410 and the ground ring 600 to seal the gap caused by the gap adjustment member 410 between the shower head 320 and the extension portion 322. The gap prevents the gas in the vacuum reaction chamber 100 from leaking out, ensures the airtightness of the plasma processing device, and can make the semiconductor etching reaction effect better.

The foregoing descriptions are only preferred embodiments of the present invention, and do not limit the scope of the present invention. Any equivalent structural transformations or direct/indirect use of the description and drawings of the present invention are made under the inventive concept of the present invention. Applications in other related technical fields are included in the scope of patent protection of the present invention.

In summary, regardless of the purpose, means, and effects of this case, it is showing its technical characteristics that are very different from conventional knowledge, and its first invention is suitable for practical use, and it is also in line with the patent requirements of the invention. Granting patents as soon as possible will benefit the society and feel the virtues.

100: Vacuum reaction chamber 200: Lower electrode assembly 300: Upper electrode assembly 310: Mounting base 311: Internal Department 312: Extension Department 320: sprinkler head 400: Leveling mechanism 410: Gap adjuster 411: Double Bolt 401: Screw 402: fixed nut 403: Adjusting nut 412: Vacuum bellows 420: Sealed bellows 500: cover 600: Grounding ring 700: sealing ring 800: Elastic gasket

In order to explain the technical solutions in the embodiments of the present invention more clearly, the following will briefly introduce the drawings that need to be used in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those who are generally knowledgeable in this field, they can also obtain other schemas based on these schemas without paying creative work. FIG. 1 is a schematic structural diagram of a leveling mechanism for vacuum equipment installed on a plasma processing apparatus according to the first embodiment of the present invention; Fig. 2 is a partial enlarged schematic diagram of A in Fig. 1; 3 is a schematic diagram of the distribution of the gap adjusting member and the sealing bellows on the cover plate provided by the first embodiment of the present invention; 4 is a schematic structural diagram of a leveling mechanism for vacuum equipment installed on a plasma processing apparatus according to the second embodiment of the present invention; Fig. 5 is a partial enlarged schematic diagram of B in Fig. 4; Fig. 6 is a schematic diagram of the distribution of the gap adjusting member and the sealing bellows on the sprinkler head and the grounding ring provided by the second embodiment of the present invention.

100: Vacuum reaction chamber

200: Lower electrode assembly

300: Upper electrode assembly

310: Mounting base

311: Internal Department

312: Extension Department

320: sprinkler head

400: Leveling mechanism

410: Gap adjuster

420: Sealed bellows

500: cover

600: Grounding ring

Claims (10)

A leveling mechanism for vacuum equipment, which includes: At least one gap adjusting member and a sealed bellows arranged on the outer circumference of the gap adjusting member, the gap adjusting member includes a double-layer bolt and a vacuum bellows sleeved on the outer circumference of the double-layer bolt, both ends of the double-layer bolt A first part and a second part are respectively connected, so that the distance between the first part and the second part can be adjusted at least partially by adjusting the double-layer bolts. The leveling mechanism according to claim 1, wherein the first part and/or the second part are at least partially placed in a vacuum environment. A plasma processing device, which includes: A vacuum reaction chamber, which is used for a plasma reaction; A lower electrode assembly, which is located at the bottom of the vacuum reaction chamber and is used to carry a substrate to be processed; An upper electrode element, which is arranged opposite to the lower electrode assembly, and is used to deliver a process gas into the vacuum reaction chamber; and A leveling mechanism according to claim 1 or 2, which is used to at least partially adjust the distance between the upper electrode element and the lower electrode element. The plasma processing apparatus according to claim 3, wherein the upper electrode assembly includes a mounting base and a shower head arranged at the bottom of the mounting base, and the mounting base has an extension extending in the vacuum reaction chamber. An inner extension part and an outer extension part extending outside the vacuum reaction chamber. The plasma processing device according to claim 3, wherein the plasma processing device further includes a cover plate disposed opposite to the extension part and a ground ring disposed on the outer periphery of the shower head. The plasma processing apparatus according to claim 4 or 5, wherein the first component includes the mounting base; and/or, The second component includes the cover plate, the ground ring and the shower head. The plasma processing device according to claim 6, wherein the double-layer bolt includes a screw with one end extending through below the cover plate and the other end extending through the upper part of the extension part, and is disposed under the cover plate. A fixing nut connected with the screw, an adjusting nut arranged above the extension part and connected with the screw, both ends of the vacuum bellows and the sealing bellows are respectively connected with the extension part and the cover plate. The plasma processing device according to claim 7, wherein a sealing ring is provided at the connection between the two ends of the sealing bellows and the extension part and the cover plate; and/or, An elastic gasket is arranged between the vertical side wall of the extension part and the cover plate. The plasma processing device according to claim 6, wherein the double-layer bolt includes a screw with one end extending through the extension portion and the other end connected to the shower head through a screw, and a screw provided above the extension portion An adjusting nut is connected with the screw, both ends of the vacuum bellows are respectively connected with the extension part and the spray head, and both ends of the sealing bellows are respectively connected with the extension part and the grounding ring. The plasma processing apparatus according to claim 9, wherein a sealing ring is provided at the connection between the two ends of the sealing bellows and the extension part and the ground ring.

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