TWI795807B - Gas flow adjustment device and adjustment method, and plasma processing device - Google Patents

Abstract

A gas flow regulating device, a regulating method, and a plasma processing device. The gas flow regulating device includes a gas baffle and a plurality of liftable isolation components arranged on the gas baffle. The area of the gas distribution area and the annular gas distribution area is dynamically adjusted, so that the plasma processing rate of the circular gas distribution area and/or the area corresponding to the annular gas distribution area is consistent with other areas. The present invention can be applied to different chemical gas environments and different gas ratios, so that different gas distribution area areas correspond to different chemical gas environments and different gas ratios, greatly improving the flexibility and sensitivity of adjusting the plasma processing rate And accuracy, improve the uniformity of plasma processing rate, and simple operation, improve the applicability of equipment, shorten the process adjustment test cycle.

Description

Gas flow adjustment device, adjustment method, and plasma processing device

The invention relates to the field of semiconductor manufacturing, in particular to a gas flow regulating device, a gas flow regulating method, and a plasma processing device using the gas flow regulating device.

With the increasing update of the chip industry and the improvement of technology nodes, there are also higher and higher requirements for the refinement of the process and technology, especially below 3nm, the refined process is becoming more and more prominent, such as the uniformity of the process, That is, any film deposition, etching, polishing and other processes require high uniformity with the improvement of nano-nodes.

During the current process research and development process, many difficulties are often encountered in new chemical environments or further optimization of existing chemical environments, one of which is the adjustment of uniformity. At present, there are many methods to adjust the uniformity. One of the methods is to adjust the gas flow into the gas shower head through the gas buffer. Above the showerhead, the gas baffle is connected to the external reaction gas. The gas baffle can generally be divided into multiple areas, and each area is isolated from each other. By adjusting the proportion of gas entering each area, different areas can be obtained. The gas content, and then change the gas content from the installation base to the different areas of the gas shower head and finally to the process chamber (chamber), so as to improve the effect of uniform etching or deposition. Because the position and area size of each zone in the existing gas baffle are all fixed, the gas partition in a certain gas baffle may only be applicable to a certain reaction chemical gas, and Different processes require the use of different chemical reaction gases, and different chemical gases have different densities. The same gas baffle cannot meet the uniformity adjustment requirements in different chemical gas environments at the same time, reducing the gas baffle in different gases. , different gas ratios, and sensitivity in different chemical environments are not conducive to the progress of the process and reduce the yield of the product.

The statements herein merely provide background art related to the present invention and do not necessarily constitute prior art.

The invention provides a gas flow regulating device, a regulating method, and a plasma processing device, which can dynamically adjust the area of the circular gas distribution area and the annular gas distribution area between the gas baffle and the mounting substrate according to the change of the plasma processing rate. Adjustment, so as to dynamically adjust the distribution of gas chambers in the gas baffle in the plasma processing device to obtain a uniform plasma processing rate.

In order to achieve the above object, the present invention provides a gas flow regulating device, which is arranged in a vacuum reaction chamber of a plasma processing device, the gas flow regulating device is connected with an external gas supply device, and the gas flow regulating device is installed by The base plate realizes the adjustment of the area of different regions of the gas shower head, and the gas flow adjustment device includes: a gas baffle, including a top plate and a bottom plate arranged oppositely, and the bottom plate cooperates with the installation base plate to form a concentric circular gas distribution area and at least one annular gas distribution area; an isolation assembly, which can be lifted and arranged between the gas baffle and the installation substrate, and is used to carry out the area of the circular gas distribution area and/or the annular gas distribution area adjust.

The isolation assembly comprises at least two concentric annular isolation layers, and different annular isolation layers can be raised and lowered to change the circular gas distribution area and/or the area of the annular gas distribution area.

On the one hand, the annular isolation layer includes an annular partition, and the annular partition is movable and connected up and down.

The annular isolation layer also includes a lifting and fixing component arranged on the top plate of the gas baffle, and the lifting and fixing component is connected to the annular partition to realize the lifting of the annular partition.

A first sealing ring is provided at the end of the ring-shaped partition in contact with the installation substrate, for realizing the sealing between the ring-shaped partition and the installation substrate.

The annular partition is provided with a second sealing ring, the second sealing ring is located above the bottom plate of the gas baffle, and the second sealing ring is used to realize the sealing between the annular partition and the gas baffle. The seal between the base plate of the board.

A through hole is formed on the bottom plate of the gas baffle, and the annular partition passes through the through hole to contact the installation substrate when lowered.

The shape of the through hole fits with the shape of the second sealing ring, and as the annular partition descends, the second sealing ring can be completely matched with the through hole and sealed together, avoiding the The gas in the gas baffle enters the adjacent area through the through hole.

The gas baffle also includes a connection component, one end of the connection component is connected to the top plate of the gas baffle, and the other end of the connection component is connected to the bottom plate of the gas baffle to support the gas baffle. bottom plate and maintain the shape of the through hole.

On the other hand, the annular isolation layer includes at least two columnar partitions arranged at intervals along the circumferential line, and fan-shaped annular partitions arranged between adjacent columnar partitions, and the columnar partitions It can be lifted and connected flexibly, and the fan ring partition is fixedly arranged.

The annular isolation layer also includes a lifting and fixing component arranged on the top plate of the gas baffle, and the lifting and fixing component is connected to the columnar partition to realize the lifting of the columnar partition.

A first sealing ring is provided at the end of the columnar spacer in contact with the installation substrate for sealing between the columnar spacer and the installation substrate.

A second sealing ring is arranged on the columnar partition, the second sealing ring is located above the bottom plate of the gas baffle, and the second sealing ring is used to realize the connection between the columnar partition and the gas baffle. The seal between the base plate of the board.

A third sealing ring is arranged on the columnar partition to realize the sealing between the columnar partition and the fan-shaped annular partition.

A through hole is formed on the bottom plate of the gas baffle, and the columnar spacer passes through the through hole and contacts with the installation substrate.

The shape of the through hole fits with the shape of the second sealing ring, and as the columnar partition descends, the second sealing ring can be completely matched with the through hole and sealed together, avoiding the The gas in the gas baffle enters the adjacent area through the through hole.

The lifting and fixing assembly includes a threaded screw and a nut, the screw is fixedly connected to the annular partition or columnar partition, and the rotation of the nut realizes the lifting of the screw, thereby realizing the annular partition or columnar partition up and down.

A bellows is provided on the screw to realize the sealing between the lifting and fixing assembly and the top plate of the gas baffle.

A plurality of gas through holes are arranged on the bottom plate of the gas baffle for realizing gas delivery to the circular gas distribution area and the annular gas distribution area.

A plurality of gas through holes are arranged on the mounting substrate, and the gas through holes correspond to the gas through holes on the gas shower head.

The present invention also provides a plasma processing device, comprising a vacuum reaction chamber, a base for supporting a substrate is arranged in the vacuum reaction chamber, a gas shower head is arranged in the vacuum reaction chamber, and the gas The shower head is arranged on the installation substrate, and the installation substrate cooperates with the gas flow regulating device to realize the adjustment of the areas of different regions of the gas shower head.

The present invention also provides a gas flow adjustment method in a plasma processing device realized by using the gas flow adjustment device, wherein the range of a circular gas distribution area and/or an annular gas distribution area corresponding to an uneven plasma processing rate area is selected , by adjusting the lifting of the annular partition, or by adjusting the lifting of the columnar partition, the circular gas distribution area and/or the area of the annular gas distribution area can be dynamically adjusted, so that The plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is consistent with other areas.

The plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is higher than that of other areas, then by adjusting the rise of the annular baffle or columnar baffle to increase the The area of the shaped gas distribution area and/or the annular gas distribution area.

The plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is lower than that of other areas, then by adjusting the descending of the annular partition or columnar partition to reduce the The area of the shaped gas distribution area and/or the annular gas distribution area.

The present invention realizes the dynamic adjustment of the area of the circular gas distribution area and the annular gas distribution area between the gas baffle and the installation substrate according to the change of the plasma processing rate by setting up and down the isolation component, thereby dynamically adjusting the plasma The distribution of gas chambers in the gas baffle in the body processing device can be applied to different chemical gas environments and different gas ratios, so that different gas distribution area areas correspond to different chemical gas environments and different gas ratios, which greatly improves the control of chemical gases. The flexibility, sensitivity and accuracy of adjusting the plasma processing rate improve the uniformity of the plasma processing rate, the operation is simple, the applicability of the equipment is improved, and the process adjustment test cycle is shortened.

1: Vacuum reaction chamber

2: External air supply device

3: Gas flow adjustment device

301:Circular gas distribution area

302: Annular gas distribution area

31: Gas baffle

32: top plate

33: Bottom plate

3301: Through hole

3302: gas through hole

3303: ring structure

34: Isolation components

35: ring isolation layer

3501: ring partition

3502: Lifting and fixing components

3503: the first sealing ring

3504: Second sealing ring

3505: Bellows

3506: screw

3507: Nut

3508: columnar partition

3509: fan ring partition

36: Connection components

4: Install the substrate

41: gas through hole

5: Gas sprinkler head

51: gas through hole

6: Plasma

7: Base

8: Electrostatic chuck

9: Substrate

FIG. 1 is a schematic structural diagram of a plasma processing device provided with a gas flow regulating device provided by the present invention.

Fig. 2 is a schematic structural diagram of the gas flow regulating device.

Fig. 3 is a top view of the gas flow regulating device.

Fig. 4 is a schematic structural diagram of an isolation assembly in an embodiment of the present invention.

Fig. 5 is a top view of an annular isolation layer in an embodiment of the present invention.

Fig. 6 is a bottom view of an annular isolation layer in an embodiment of the present invention.

7 and 8 are schematic diagrams of dynamically adjusting the area of the gas distribution area in the gas baffle in an embodiment of the present invention.

Fig. 9 is a schematic structural diagram of an isolation assembly in another embodiment of the present invention.

Fig. 10 is a top view of an annular isolation layer in another embodiment of the present invention.

Fig. 11 is a bottom view of an annular isolation layer in another embodiment of the present invention.

12 and 13 are schematic diagrams of dynamically adjusting the area of the gas distribution area in the gas baffle in another embodiment of the present invention.

The preferred embodiment of the present invention will be described in detail below according to FIG. 1 to FIG. 13 .

As shown in Fig. 1, the present invention provides a kind of plasma processing device, comprises a vacuum reaction chamber 1, and a base 7 as the lower electrode is arranged in the said vacuum reaction chamber 1, and the electrostatic chuck 8 is arranged on the base 7, and the base The sheet 9 is disposed on the electrostatic chuck 8 . A gas shower head 5 as an upper electrode is also arranged in the vacuum reaction chamber 1, the gas shower head 5 is arranged on the mounting substrate 4, and a plurality of gas through holes 41 are arranged on the mounting substrate 4, the The gas through holes 41 on the mounting substrate 4 correspond to the gas through holes 51 on the gas shower head 5 . A gas flow regulating device 3 is also provided in the vacuum reaction chamber 1, the gas flow regulating device 3 is connected to the gas shower head 5 through the mounting substrate 4, and the gas flow regulating device 3 is connected to an external supply Gas device 2 is connected. The reaction gas enters the gas flow regulating device 3 from the external gas supply device 2, and the mounting substrate 4 cooperates with the gas flow regulating device 3 to realize the control of the gas shower head. The area of different regions of 5 is adjusted, so as to adjust the gas flow rate of different regions of the gas shower head 5, the reaction gas entering the vacuum reaction chamber 1 is ionized to generate plasma 6, and the substrate 9 is processed.

In one embodiment of the present invention, as shown in FIG. 2 and FIG. 3 , the gas baffle 31 includes a top plate 32 and a bottom plate 33 oppositely arranged, and a fixed ring is set between the bottom plate 33 and the installation substrate 4 The shape structure 3303 is used to separate the air intake surface of the mounting substrate 4 to form a concentric circular gas distribution area 301 and at least one annular gas distribution area 302 . Since the annular structure 3303 is a fixed structure, the areas of the circular gas distribution area 301 and the annular gas distribution area 302 are relatively fixed. In order to adjust the gas flow in different gas distribution areas of the gas shower head more flexibly, the present invention The gas flow regulating device 3 provided includes a gas baffle 31 and a plurality of isolation components 34 arranged on the gas baffle 31, and the isolation components 34 are liftably arranged between the gas baffle 31 and the installation substrate 4 space, and the isolation assembly 34 can dynamically adjust the area of the circular gas distribution area 301 and/or the annular gas distribution area 302, and the bottom plate 33 is provided with a plurality of gas through holes 3302 for realizing Gas delivery to the circular gas distribution area 301 and the annular gas distribution area 302 .

As shown in Figures 4 to 6, the isolation assembly 34 includes at least two concentrically arranged annular isolation layers 35, and the annular isolation layer 35 includes an annular partition 3501 and at least two lifting and fixing assemblies 3502, The annular partition 3501 is connected to the top plate 32 and the bottom plate 33 in a movable manner. In this embodiment, three layers of annular isolation layers 35 are provided, and six layers of annular isolation layers 35 are arranged on each layer of the annular isolation layer 35. A lifting and fixing assembly 3502 (as shown in Figure 5), the lifting and fixing assembly 3502 includes a threaded screw 3506 and a nut 3507, the screw 3506 is fixedly connected to the annular partition 3501, through the rotation of the nut 3507 Realize the lifting of the screw 3506, thereby realizing the lifting of the annular partition 3501. The screw 3506 is provided with a bellows 3505 for realizing the lifting and fixing assembly 3502 and the top plate 32 of the gas baffle 31 seal between. The end of the annular partition 3501 in contact with the installation substrate 4 is provided with a first sealing ring 3503 for realizing the sealing between the annular partition 3501 and the installation substrate 4 . The annular partition 3501 is provided with a second sealing ring 3504, and the second sealing ring 3504 is located on the gas baffle 31 Above the bottom plate 33 of the gas baffle 31 , the second sealing ring 3504 is used to realize the sealing between the annular partition 3501 and the bottom plate 33 of the gas baffle 31 . Both the first sealing ring 3503 and the second sealing ring 3504 have properties such as high temperature resistance and corrosion resistance.

As shown in Figure 4, in order to match the isolation assembly 34, the bottom plate 33 of the gas baffle 31 is provided with a through hole 3301, and the annular partition 3501 passes through the through hole 3301 and the The mounting substrate 4 is in contact, and the shape of the through hole 3301 matches the shape of the second sealing ring 3504. As the annular partition 3501 descends, the second sealing ring 3504 can be in contact with the through hole 3501. The holes 3301 are completely matched and sealed together, preventing the gas in the gas baffle 31 from passing through the through holes 3301 into adjacent areas. Since the ring-shaped partition 3501 is used in this embodiment, the matching through hole 3301 is also ring-shaped from the top view, and the presence of multiple ring-shaped through holes 3301 on the bottom plate 33 will cause the bottom plate 33 is split into multiple parts, in order to prevent the bottom plate 33 between the adjacent through holes 3301 from falling off, a connection assembly 36 is provided, one end of the connection assembly 36 is connected to the top plate 32 of the gas baffle 31, and the connection The other end of the component 36 is connected to the bottom plate 33 of the gas baffle 31 for supporting the bottom plate 33 of the gas baffle 31 and maintaining the shape of the through hole 3301 .

During the plasma treatment process, due to the different types and proportions of chemical gases participating in the reaction in different processes, the gas flow rate and other parameters that need to be transported in different gas distribution areas on the gas shower head vary, so it is necessary to lift the isolation assembly 34 to dynamically adjust the circular gas distribution area between the gas baffle 31 and the installation substrate 4 and/or the area of the annular gas distribution area, thereby dynamically adjusting the The gas flow rate in different regions of the gas shower head 5 is used to obtain a uniform plasma treatment rate.

In this embodiment, a circular gas distribution area 301 and three annular gas distribution areas 302 are formed concentrically arranged between the bottom plate 33 and the mounting substrate 4 , and the isolation assembly 34 includes three layers of concentrically arranged annular gas distribution areas 302 . Isolation layer 35. During the plasma processing, if the plasma processing rate of the area corresponding to the annular gas distribution area 302 adjacent to the circular gas distribution area 301 is higher than In other areas, it means that the reaction gas density in this area is relatively high, which can be reduced by enlarging the area of the annular gas distribution area 302 corresponding to this area (in the case of constant height, the area expands, and the space volume also expands thereupon). gas density. As shown in FIG. 7 , the annular partitions 3501 in all the annular isolation layers 35 between the selected annular gas distribution area 302 and adjacent annular gas distribution areas 302 can be raised, specifically, Rotating the screw 3506 drives the annular partition 3501 up until there is a gap between the annular partition 3501 and the installation substrate 4 , and uses the nut 3507 to fix the current position of the screw 3506 . The rising position limit of the annular partition 3501 is to ensure that the first sealing ring 3503 is still located in the through hole 3301 on the bottom plate 33. At this time, the first sealing ring 3503 and the through hole 3301 are sealed together to prevent the gas in the gas baffle 31 from entering the adjacent area through the through hole 3301 . When the annular isolation layer 35 is fully raised, the selected annular gas distribution area 302 is fully connected with the adjacent annular gas distribution area 302, and the two adjacent annular gas distribution areas 302 have merged Become an annular gas distribution area 302, that is to say, the area of the selected annular gas distribution area 302 is enlarged, thereby reducing the reaction gas density in the annular gas distribution area 302, and subsequently reducing the The plasma processing rate of the area corresponding to the distribution area 302 is to make the plasma processing rate of the area corresponding to the selected annular gas distribution area 302 consistent with that of other areas, so as to obtain a uniform plasma processing rate.

As the types and proportions of the reacting chemical gases have changed, the plasma processing rate in the area corresponding to the annular gas distribution area 302 next to the circular gas distribution area 301 in FIG. 7 becomes lower than other areas, indicating that this The reaction gas density in the region is low, and the gas density can be increased by reducing the area of the annular gas distribution region 302 corresponding to the region. As shown in Figure 8, if the plasma processing rate of the region corresponding to the selected annular gas distribution region 302 differs greatly from other regions, then the area of the selected annular gas distribution region 302 needs to be reduced more, so Choose to lower the annular partition 3501 in the annular isolation layer 35 closest to the center of the circle, and rotate the screw 3506 to drive the annular partition 3501 down until the first sealing ring 3503 is in contact with the base The plate 4 is compressed and sealed, and the current position of the screw rod 3506 is fixed by the nut 3507. At this time, the second sealing ring 3504 is completely embedded in the through hole 3301, so that the ring-shaped partition 3501 and the The sealing between the bottom plate 33 of the gas baffle plate 31, the area of the selected annular gas distribution area 302 is reduced, thereby improving the reaction gas density in the annular gas distribution area 302, thereby improving the connection with the annular gas distribution area 302 The plasma processing rate of the area corresponding to the gas distribution area 302 is to make the plasma processing rate of the area corresponding to the selected annular gas distribution area 302 consistent with other areas, so as to obtain a uniform plasma processing rate.

By setting a liftable annular partition, the circular gas distribution area between the gas baffle and the installation substrate and the area of the annular gas distribution area can be dynamically adjusted, which can be applied to different chemical gas environments and different gas ratios , so that different gas distribution areas correspond to different chemical gas environments and different gas ratios, greatly improving the flexibility, sensitivity and accuracy of adjusting the plasma processing rate, improving the uniformity of the plasma processing rate, and The operation is simple, the applicability of the equipment is improved, and the test cycle for process adjustment is shortened.

In another embodiment of the present invention, as shown in FIG. 2 and FIG. 3 , the gas flow regulating device 3 includes a gas baffle 31 and a plurality of isolation components 34 arranged on the gas baffle 31 , the The gas baffle 31 includes a top plate 32 and a bottom plate 33 which are arranged oppositely. The isolation assembly 34 is arranged between the gas baffle 31 and the mounting substrate 4 in a liftable manner. The bottom plate 33 and the mounting substrate 4 are separated by the isolation assembly. 34 to separate and form a concentrically arranged circular gas distribution area 301 and at least one annular gas distribution area 302, and the isolation assembly 34 can carry out the area of the circular gas distribution area 301 and/or the annular gas distribution area 302 For dynamic adjustment, a plurality of gas through-holes 3302 are provided on the bottom plate 33 to realize gas delivery to the circular gas distribution area 301 and the annular gas distribution area 302 .

As shown in Figures 9 to 11, the isolation assembly 34 includes at least two concentrically arranged annular isolation layers 35, and the annular isolation layer 35 includes at least two liftable columnar partitions arranged at intervals along the circumferential line. plate 3508, and the fan-shaped ring-shaped partition fixedly arranged between the adjacent columnar partitions 3508 3509, the fan ring-shaped partition 3509 is a fixed structure and cannot be moved, and it is always in a state of being attached to the gas baffle 31 and the installation substrate 4, so as to achieve isolation between different gas distribution areas. The columnar partition 3508 is connected to the top plate 32 and the bottom plate 33 in a liftable manner, so as to realize gas communication between adjacent gas distribution areas. The annular isolation layer 35 also includes at least two lifting and fixing components 3502 arranged on the top plate 32 of the gas baffle 31, and the lifting and fixing components 3502 are connected to the columnar partition 3508 to realize the columnar spacer. Lifting of partition 3508. In this embodiment, three layers of annular isolation layers 35 are provided, and six liftable columnar partitions 3508 are arranged on each annular isolation layer 35, and each columnar partition 3508 is correspondingly connected A lifting and fixing assembly 3502 (as shown in Figure 10 and Figure 11), the lifting and fixing assembly 3502 includes a threaded screw 3506 and a nut 3507, the screw 3506 is fixedly connected to the columnar partition 3508, through the The rotation of the nut 3507 realizes the lifting of the screw rod 3506, thereby realizing the lifting of the columnar partition 3508. The screw rod 3506 is provided with a bellows 3505 for realizing the lifting and fixing assembly 3502 and the gas barrier. The seal between the top plate 32 of the plate 31. The end of the columnar partition 3508 in contact with the installation substrate 4 is provided with a first sealing ring 3503 for realizing the sealing between the columnar partition 3508 and the installation substrate 4 . The columnar partition 3508 is provided with a second sealing ring 3504, the second sealing ring 3504 is located above the bottom plate 33 of the gas baffle 31, and the second sealing ring 3504 is used to realize the The seal between the plate 3508 and the bottom plate 33 of the gas baffle 31 . Both the first sealing ring 3503 and the second sealing ring 3504 have properties such as high temperature resistance and corrosion resistance.

As shown in FIG. 9, in order to match the isolation assembly 34, a through hole 3301 is provided on the bottom plate 33 of the gas baffle 31, and the columnar partition 3508 passes through the through hole 3301 and the through hole 3301 when lowered. The mounting substrate 4 is in contact, and the shape of the through hole 3301 matches the shape of the second sealing ring 3504. As the columnar partition 3508 descends, the second sealing ring 3504 can be in contact with the through hole 3504. The holes 3301 are completely matched and sealed together, preventing the gas in the gas baffle 31 from passing through the through holes 3301 into adjacent areas. Since columnar partitions 3508 are used in this embodiment, correspondingly, the matching through holes 3301 are a plurality of mutually independent hole structures formed on the bottom plate 33, and the through holes 3301 are not The bottom plate 33 will be split, so in this embodiment, there is no need to provide connecting components to support the bottom plate 33 and maintain the shape of the through hole 3301 .

During the plasma treatment process, due to the change of the type and proportion of the chemical gas reacting, the plasma treatment rate is uneven, then according to the real-time change of the plasma treatment rate, all the spacers in the isolation assembly 34 can be raised and lowered. The columnar partition 3508 is used to dynamically adjust the area of the circular gas distribution area and/or the annular gas distribution area between the gas baffle 31 and the mounting substrate 4, thereby dynamically adjusting the gas shower head 5 gas flows in different areas to obtain a uniform plasma treatment rate.

In this embodiment, a circular gas distribution area 301 and three annular gas distribution areas 302 are formed concentrically arranged between the bottom plate 33 and the mounting substrate 4 , and the isolation assembly 34 includes three layers of concentrically arranged annular gas distribution areas 302 . Isolation layer 35. During the plasma treatment process, if the plasma processing rate of the area corresponding to the annular gas distribution area 302 adjacent to the circular gas distribution area 301 is higher than that of other areas, it means that the reaction gas density in this area is relatively high, which can be passed The area of the annular gas distribution area 302 corresponding to this area is enlarged to reduce the gas density. As shown in FIG. 12 , the columnar partitions 3508 in all the annular isolation layers 35 between the selected annular gas distribution area 302 and the adjacent annular gas distribution area 302 can be raised, specifically, The columnar partition 3508 is raised by rotating the screw 3506 until there is a gap between the columnar partition 3508 and the installation substrate 4 , and the current position of the screw 3506 is fixed by the nut 3507 . The rising position limit of the columnar partition 3508 is to ensure that the first sealing ring 3503 is still located in the through hole 3301 on the bottom plate 33. At this time, the first sealing ring 3503 and the through hole 3301 are sealed together to prevent the gas in the gas baffle 31 from entering the adjacent area through the through hole 3301 . When the columnar partition 3508 is fully raised, the selected annular gas distribution area 302 is completely connected to the adjacent annular gas distribution area 302, that is, the selected annular gas distribution area The area of 302 is expanded, thereby reducing the reaction gas density in the annular gas distribution area 302, thereby reducing the area corresponding to the annular gas distribution area 302 The plasma processing rate of the domain, so that the plasma processing rate of the area corresponding to the selected annular gas distribution area 302 is consistent with other areas, so as to obtain a uniform plasma processing rate.

As the types and proportions of the reacting chemical gases change, the plasma processing rate in the area corresponding to the annular gas distribution area 302 next to the circular gas distribution area 301 in Fig. 12 becomes lower than that in other areas, indicating that this The reaction gas density in the region is low, and the gas density can be increased by reducing the area of the annular gas distribution region 302 corresponding to the region. As shown in Figure 13, if the plasma processing rate of the region corresponding to the selected annular gas distribution region 302 is significantly different from other regions, then the area of the selected annular gas distribution region 302 needs to be reduced more, so Choose to lower the columnar partition 3508 in the annular isolation layer 35 closest to the center of the circle, and rotate the screw 3506 to drive the columnar partition 3508 down until the first sealing ring 3503 and the The installation substrate 4 is pressed and sealed, and the current position of the screw 3506 is fixed by the nut 3507. At this time, the second sealing ring 3504 is completely embedded in the through hole 3301 to realize the columnar partition 3508. With the seal between the bottom plate 33 of the gas baffle plate 31, the area of the selected annular gas distribution area 302 is reduced, thereby increasing the reaction gas density in the annular gas distribution area 302, thereby increasing the density of the reaction gas with the selected annular gas distribution area 302. The plasma processing rate of the area corresponding to the annular gas distribution area 302 is determined so that the plasma processing rate of the area corresponding to the selected annular gas distribution area 302 is consistent with other areas, and a uniform plasma processing rate is obtained.

By setting up and down columnar partitions, the area of the circular gas distribution area and the annular gas distribution area between the gas baffle and the installation substrate can be dynamically adjusted, which can be applied to different chemical gas environments and different gas ratios , so that different gas distribution areas correspond to different chemical gas environments and different gas ratios, greatly improving the flexibility, sensitivity and accuracy of adjusting the plasma processing rate, improving the uniformity of the plasma processing rate, and The operation is simple, the applicability of the equipment is improved, and the test cycle for process adjustment is shortened.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alterations to the present invention will become apparent to those having ordinary skill in the art of the present invention after reading the above disclosure. Therefore, the protection scope of the present invention should be limited by the scope of the appended patent application.

301:Circular gas distribution area

302: Annular gas distribution area

31: Gas baffle

32: top plate

33: Bottom plate

3301: Through hole

3302: gas through hole

3303: ring structure

34: Isolation components

4: Install the substrate

Claims (29)

A gas flow regulating device, which is arranged in a vacuum reaction chamber of a plasma processing device, the gas flow regulating device is connected with an external gas supply device, wherein, the gas flow regulating device realizes the control of the gas shower head through a mounting substrate The area of different regions is adjusted. The gas flow regulating device includes: a gas baffle, including a top plate and a bottom plate oppositely arranged, and the bottom plate cooperates with the installation base plate to form a concentrically arranged circular gas distribution area and at least one ring A circular gas distribution area; an isolation component, which can be lifted up and down between the gas baffle and the installation substrate, and is used to adjust the area of the circular gas distribution area and/or the annular gas distribution area. The gas flow regulating device as claimed in item 1, wherein the isolation assembly comprises at least two layers of an annular isolation layer arranged concentrically, and the annular isolation layers with different lifts can change the circular gas distribution area and/or the The area of the annular gas distribution zone. The gas flow regulating device as claimed in claim 2, wherein the annular isolation layer includes an annular partition, and the annular partition is a movable connection that can be moved up and down. The gas flow regulating device according to claim 3, wherein the annular isolation layer further includes a lifting and fixing component arranged on the top plate of the gas baffle, and the lifting and fixing component is connected to the annular partition to realize the The lifting of the ring partition. The gas flow regulating device according to claim 4, wherein a first sealing ring is provided at the end of the ring-shaped partition in contact with the mounting substrate, for realizing the sealing between the ring-shaped partition and the mounting substrate. The gas flow regulating device according to claim 4, wherein a second sealing ring is arranged on the annular partition, the second sealing ring is located above the bottom plate of the gas baffle, and the second sealing ring is used to realize The seal between the annular partition and the bottom plate of the gas baffle. The gas flow regulating device as claimed in claim 6, wherein the bottom plate of the gas baffle has a through hole, and the annular partition passes through the through hole to contact the installation substrate when it is lowered. The gas flow regulating device as claimed in item 7, wherein, the shape of the through hole fits with the shape of the second sealing ring, and as the annular partition descends, the second sealing ring can be completely connected to the through hole. Matching and sealing together, preventing the gas in the gas baffle from entering the adjacent area through the through hole. The gas flow regulating device according to claim 7, wherein the gas baffle further includes a connection component, one end of the connection component is connected to the top plate of the gas baffle, and the other end of the connection component is connected to the gas baffle. The bottom plate is used to support the bottom plate of the gas baffle and maintain the shape of the through hole. The gas flow regulating device according to claim 2, wherein the annular isolation layer includes at least two columnar partitions arranged at intervals along the circumference, and a fan arranged between adjacent columnar partitions An annular partition, the columnar partition can be moved up and down to connect, and the fan annular partition is fixedly arranged. The gas flow regulating device according to claim 10, wherein the annular isolation layer further includes a lifting and fixing component arranged on the top plate of the gas baffle, and the lifting and fixing component is connected to the columnar partition to realize the The lifting of the columnar partition. The gas flow regulating device according to claim 11, wherein a first sealing ring is provided at the end of the columnar partition in contact with the mounting substrate, for realizing the sealing between the columnar partition and the mounting substrate. The gas flow regulating device according to claim 11, wherein a second sealing ring is arranged on the columnar separator, the second sealing ring is located above the bottom plate of the gas baffle, and the second sealing ring is used to realize The seal between the columnar partition and the bottom plate of the gas baffle. The gas flow regulating device as claimed in item 11, wherein a third sealing ring is arranged on the columnar partition to realize the sealing between the columnar partition and the sector-shaped annular partition. The gas flow regulating device according to claim 13, wherein the bottom plate of the gas baffle has a through hole, and the columnar spacer passes through the through hole and contacts the mounting substrate. The gas flow regulating device according to claim 15, wherein, the shape of the through hole fits with the shape of the second sealing ring, and as the columnar partition descends, the second sealing ring can be completely connected to the through hole. Matching and sealing together, preventing the gas in the gas baffle from entering the adjacent area through the through hole. The gas flow regulating device according to claim 4, wherein the lifting and fixing assembly includes a screw and a nut threadedly connected, the screw is fixedly connected to the annular partition, and the screw is lifted by the rotation of the nut, thereby Realize the lifting of the annular partition. The gas flow regulating device as claimed in item 17, wherein a bellows is provided on the screw rod to realize the sealing between the lifting and fixing component and the top plate of the gas baffle. The gas flow regulating device according to claim 11, wherein the lifting and fixing assembly includes a screw and a nut threadedly connected, the screw is fixedly connected to the columnar partition, and the screw can be lifted up and down by the rotation of the nut, thereby Realize the lifting of the columnar partition. The gas flow regulating device as claimed in item 19, wherein the screw is provided with a bellows for realizing the sealing between the lifting and fixing component and the top plate of the gas baffle. The gas flow regulating device according to claim 1, wherein the bottom plate of the gas baffle is provided with a plurality of gas through holes for realizing gas delivery to the circular gas distribution area and the annular gas distribution area. The gas flow regulating device according to claim 1, wherein a plurality of gas through holes are provided on the mounting substrate, and the gas through holes correspond to the gas through holes on the gas shower head. A plasma processing device, which includes a vacuum reaction chamber, a base for supporting a substrate is arranged in the vacuum reaction chamber, a gas shower head is also arranged in the vacuum reaction chamber, and the gas shower head is arranged on On a mounting substrate, the mounting substrate cooperates with a gas flow regulating device described in any one of Claims 1-20 to realize the adjustment of the area of different regions of the gas shower head. A gas flow adjustment method in a plasma processing device realized by using the gas flow adjustment device described in any one of claims 3-9, 17-18, wherein the gas flow adjustment method corresponding to the non-uniform plasma processing rate region is selected The circular gas distribution area and/or the range of the annular gas distribution area can be dynamically adjusted by adjusting the lifting of the annular partition, so that the area of the circular gas distribution area and/or the annular gas distribution area can be dynamically adjusted. The plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is consistent with other areas. The gas flow adjustment method in a plasma processing device as described in claim 24, wherein the plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is higher than that of other areas, then by The rise of the annular partition is adjusted to increase the circular gas distribution area and/or the area of the annular gas distribution area. The gas flow adjustment method in a plasma processing device as described in claim 24, wherein the plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is lower than that of other areas, then by The lowering of the annular partition is adjusted to reduce the circular gas distribution area and/or the area of the annular gas distribution area. A gas flow adjustment method in a plasma processing device realized by using the gas flow adjustment device described in any one of claims 10-16, 19-20, wherein the gas flow adjustment method corresponding to the non-uniform plasma processing rate region is selected The range of the circular gas distribution area and/or the annular gas distribution area can be dynamically adjusted by adjusting the lifting of the columnar partition, so that the area of the circular gas distribution area and/or the annular gas distribution area can be dynamically adjusted. The plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is consistent with other areas. The gas flow adjustment method in a plasma processing device as described in claim 27, wherein the plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is higher than that of other areas, then by The rise of the columnar partition is adjusted to increase the area of the circular gas distribution area and/or the annular gas distribution area. The gas flow adjustment method in a plasma processing device as described in claim 27, wherein the plasma processing rate of the selected circular gas distribution area and/or the area corresponding to the annular gas distribution area is lower than that of other areas, then by The lowering of the columnar partition is adjusted to reduce the area of the circular gas distribution area and/or the annular gas distribution area.

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