TWI838927B - Crystal Oscillator with Temperature Sensor - Google Patents

Abstract

The crystal oscillator (1) is composed of an AT-cut crystal oscillator and is in the shape of a rectangular plate as a whole. The crystal oscillator (1) is composed of an oscillating portion (11), a retaining portion (13, 13t) connected to the oscillating portion (11), and a frame portion (12) arranged on the periphery of the oscillating portion (11) and connected to the retaining portion (13, 13t). Between the oscillating portion (11) and the frame portion (12), in addition to the retaining portion (13, 13t), a through portion (14) is formed in an annular shape. A flat single-board thermistor (40) serving as a temperature sensor (4) is surface-bonded to a first sealing member (2) via a conductive resin adhesive (R1) and a resin adhesive (R2), wherein the thermal conductivity of the conductive resin adhesive (R1) is greater than the thermal conductivity of the resin adhesive (R2).

Description

Crystal Oscillator with Temperature Sensor

The present invention relates to a crystal oscillator device with a temperature sensor in which a temperature sensor is installed.

In recent years, with the advancement of high precision in various electronic devices, there is a need for a thermal compensation type crystal oscillator circuit that compensates for the frequency fluctuations caused by changes in ambient temperature. As a crystal oscillator device corresponding to this, a crystal oscillator with a temperature sensor, in which a temperature sensor such as a thermistor is installed in the crystal oscillator, has been widely used.

Such a crystal oscillator with a temperature sensor is configured such that the crystal oscillator is housed in a package made of ceramics, and a thermistor is mounted on the outside thereof to detect the ambient temperature around the crystal oscillator (see Patent Document 1).

In addition, the electronic devices described above may need to be miniaturized or thinned due to their uses. In this case, an ultra-miniaturized or ultra-thin crystal oscillator is required. For example, ultra-miniaturized or ultra-thin crystal oscillator is required in mobile devices, wearable devices, etc.

As a crystal oscillator device that meets such needs, there is a three-layer structured crystal oscillator device in which a crystal oscillator plate is hermetically sealed from top to bottom by a sheet packaging member (see Patent Document 2). In addition, Patent Document 2 discloses an example of using a thermistor as a functional part in a three-layer structured crystal oscillator.

Patent Document 1 adopts a ceramic package having a housing portion opened in the upper and lower directions. A crystal oscillator is housed in the upper opening portion and electrically connected to the package, while a thermistor is housed in the lower opening portion and electrically connected to the package.

This structure uses a ceramic package and has two storage parts, so there is a problem that it is difficult to achieve miniaturization and thinning. In addition, in Patent Document 2, a thermistor is formed in a three-layer crystal oscillator. However, according to the attached figure, the junction between the crystal oscillator and the thermistor is a structure in which the junction area is extremely small, so the heat conducted is easily dissipated, and sometimes it is difficult to perform temperature detection well. Ultimately, the temperature of the crystal oscillator cannot be measured correctly, and it may be impossible to perform appropriate temperature compensation. In this case, the electrical characteristics of the crystal oscillator device may become unstable, and the operation of the electronic device using the crystal oscillator device may also become unstable, resulting in reduced reliability of the electronic device.

[Patent document] [Patent document 1]: Japanese Patent No. 5900582 [Patent document 2]: Japanese Patent No. 5888347

In view of the above situation, the object of the present invention is to provide a crystal oscillator device with a temperature sensor that can cope with ultra-miniaturization and ultra-thinness, can stably and well measure the temperature change of the crystal oscillator device, and has excellent electrical characteristics.

As a technical solution to the above technical problems, the crystal oscillator device with a temperature sensor of the present invention comprises a crystal oscillator plate, a first sealing member bonded to the upper surface of the crystal oscillator plate, and a second sealing member bonded to the lower surface of the crystal oscillator plate; and a flat single-plate thermistor as a temperature sensor, wherein: a plurality of electrode pads are formed on the first sealing member and the flat single-plate thermistor, and the first sealing member is connected to the lower surface of the crystal oscillator plate. The electrode pad of the sealing member is surface-joined with the electrode pad of the flat single-board thermistor through a conductive resin adhesive; and the first sealing member is surface-joined with the flat single-board thermistor through a resin adhesive, and more than half of the joint surface between the flat single-board thermistor and the first sealing member is surface-joined with the conductive resin adhesive and the resin adhesive; the thermal conductivity of the conductive resin adhesive is greater than the thermal conductivity of the resin adhesive. The flat single-board thermistor refers to a thermistor board with a flat single-layer structure.

Based on the above structure, since the crystal oscillator device has a three-layer structure in which a plate-shaped crystal oscillator plate, a first sealing member, and a second sealing member are bonded, a thin crystal oscillator device structure can be achieved. In addition, since a flat single-plate thermistor is used and bonded as a temperature sensor, not only stable electrical characteristics can be obtained, but also a crystal oscillator device with a temperature sensor that is thinner and smaller than when a general-purpose stacked thermistor is used can be obtained.

In addition, when the flat single-board thermistor serving as a temperature sensor is mounted on a crystal oscillator device, more than half (50% to 100%) of the top view area of the flat single-board thermistor is surface-bonded to the surface of the first sealing member of the crystal oscillator device via the conductive resin adhesive and the resin adhesive. Therefore, heat exchange between the crystal oscillator device and the flat single-board thermistor serving as a temperature sensor can be fully performed, thereby eliminating the difference in ambient temperature sensed by the crystal oscillator device and the ambient temperature sensed by the flat single-board thermistor, thereby achieving good temperature detection.

Since only the resin adhesive is used to realize the electromechanical and mechanical bonding between the crystal oscillator and the flat single-board thermistor, it is possible to absorb stress and impact acting on the flat single-board thermistor, which tends to be weakened due to thinning, and prevent cracks or gaps from occurring in the flat single-board thermistor.

In addition, the first sealing member and the flat single-plate thermistor are bonded by a conductive resin adhesive having a higher thermal conductivity than the resin adhesive while forming an electrode pad having a high thermal conductivity. Therefore, the heat exchange between the crystal oscillator device and the flat single-plate thermistor can be smoothly performed while sensitively responding to changes in the external environmental temperature. Therefore, the temperature of the crystal oscillator device can be measured more accurately. As a result, more accurate temperature compensation can be achieved, and a crystal oscillator device with stable electrical characteristics and higher reliability can be obtained.

In particular, in the case of a crystal oscillator device having a three-layer structure consisting of a crystal oscillator plate, a first sealing member, and a second sealing member, the crystal oscillator plate tends to easily follow changes in ambient temperature, but by combining the structure of the present invention, a better structure can be achieved that can detect temperature information corresponding to the temperature changes of the crystal oscillator plate.

In addition to the above structure, the crystal oscillator plate may be a structure consisting of a vibrating portion having a pair of excitation electrodes, a holding portion extending from at least one portion of the vibrating portion, a through portion surrounding the periphery of the vibrating portion, and a frame portion surrounding the periphery of the through portion and connected to the holding portion; the first sealing member and the second sealing member are plate-shaped structures; and the vibrating portion of the crystal oscillator plate and the first sealing member are connected to each other. When the sealing member and the second sealing member are not in contact, the frame portion of the crystal oscillator piece is mechanically bonded to the first sealing member and the second sealing member; in an area including the center of gravity of the first sealing member, a portion of the flat single-board thermistor that overlaps with the oscillation portion of the crystal oscillator piece when viewed from above is surface-bonded by the resin adhesive, and a portion of the flat single-board thermistor that overlaps with the frame portion of the crystal oscillator piece when viewed from above is surface-bonded by the conductive resin adhesive.

Based on the above structure, the vibrating portion of the crystal oscillator is connected by the holding portion extending from at least one portion, and is in a state of not contacting the first sealing member and the second sealing member, and the frame portion of the crystal oscillator is mechanically bonded to the first sealing member and the second sealing member, so that the vibrating portion of the crystal oscillator is not easily affected by external stress. In particular, the influence of external stress caused by the conductive resin adhesive and the resin adhesive generated when the flat single-plate thermistor is bonded is not easily transmitted to the vibrating portion, so that the characteristics of the vibrating portion are stable.

In addition, since the flat single-board thermistor is surface-bonded with the vibrating portion of the crystal oscillator in the region including the center of gravity of the first sealing member, the portion overlapping with the vibrating portion of the crystal oscillator in a plan view is bonded by the resin adhesive, not only is the influence of external stress caused by the resin adhesive generated when bonding the flat single-board thermistor difficult to be transmitted to the vibrating portion, but also the external stress can be prevented from strongly acting on the flat single-board thermistor itself. In addition, since heat exchange between the crystal oscillator device and the flat single-board thermistor can be efficiently performed through the center of gravity of the first sealing member without waste, it is possible to prevent heat from being dissipated in one direction, and a temperature difference in ambient temperature is difficult to be generated between the two.

In addition, since the flat single-plate thermistor is surface-bonded with a conductive resin adhesive having high thermal conductivity at a portion overlapping with the frame portion of the crystal oscillator in a plan view, direct heat transfer from the first sealing member to the crystal oscillator can be promoted, thereby achieving sensitive heat exchange between the crystal oscillator device and the flat single-plate thermistor in response to changes in external ambient temperature. Therefore, the temperature of the crystal oscillator device can be detected more accurately.

The conductive resin adhesive has a structure in which conductive fillers composed of metal powder, metal flakes, etc. are added to the resin adhesive. Since these conductive resin adhesives join the two electrode pad surfaces, the good thermal conductivity of the metal material can be utilized to enable the temperature sensor to detect the temperature change of the crystal oscillator with less delay.

In addition to the above structure, the flat single-plate thermistor may be covered with a resin material. For example, the resin material may be formed to cover the entire outer surface of the flat single-plate thermistor. In this structure, since the heat conducted to the temperature sensor is not dissipated in vain, the temperature in the crystal oscillator device can be accurately detected.

Here, the temperature information (such as current value, voltage value, resistance value, etc.) detected by the flat single-board thermistor as a temperature sensor is connected to the outside through an independent terminal. Then, the frequency information of the crystal oscillator device is appropriately compensated for temperature using an external compensation circuit, so that the correct frequency can be obtained.

A plurality of electrode pads are formed on the joint surface between the flat single-board thermistor and the first sealing member, and the sum of the areas of the electrode pads may be 40% to 85% of the top view area of the flat single-board thermistor. Here, the top view area refers to the projected area, and the area ratio refers to the ratio of the sum of the projected areas of the electrode pads to the projected area of the flat single-board thermistor.

The larger the contact area between the flat single-board thermistor and the crystal oscillator device, the more accurately the temperature of the crystal oscillator device can be detected. Therefore, the larger the electrode pad formed on the flat single-board thermistor is relative to the top view area of the flat single-board thermistor, the better. However, if it is too large, it is easy to cause a short circuit between adjacent electrode pads or a short circuit caused by a conductive resin adhesive. If the contact area becomes smaller, the temperature detection accuracy of the crystal oscillator device decreases. Therefore, by making the sum of the areas of each electrode pad 40% to 85% of the area of the flat single-board thermistor, stable temperature detection can be achieved.

The flat single-board thermistor as a temperature sensor adopts a structure composed of a plate-shaped flat single-board thermistor (NTC flat single-board thermistor), a pair of electrode pads formed on one main surface of the flat single-board thermistor, and a common electrode pad formed on almost the entire surface of the other main surface opposite to the pair of electrode pads. The pair of electrode pads can adopt a structure conductively bonded to the electrode pad of the first sealing member. In this structure, the common electrode pad formed on almost the entire surface of the other main surface of the flat single-board thermistor can overlap with the vibration part of the crystal oscillator, thereby playing a role as a barrier to prevent unnecessary noise from reaching the vibration part.

Flat single-plate thermistors are manufactured using thick film forming technologies such as screen printing technology or scraper technology and sintering technology. Mn (manganese)-Fe (iron)-Ni (nickel) materials are sintered into a plate-shaped thermistor wafer. The plate-shaped thermistor wafer is sputtered to form an electrode film (metal film) and patterned using photolithography technology. Finally, the plate-shaped thermistor wafer is cut into single pieces to obtain a single flat single-plate thermistor. In addition, the material of the thermistor can be Mn (manganese)-Fe (iron) materials, etc.

The common thermistor (NTC thermistor) adopts a structure in which multiple layers are stacked on the thermistor material with electrode (metal) films interposed therebetween by using a lamination technique, but the above structure adopts a structure in which electrode (metal) films are formed on the front and back surfaces of a single-layer flat single-plate thermistor. By adopting a structure in which a pair of electrode pads are formed on one main surface of the flat single-plate thermistor and a common electrode pad is formed on almost the entire surface of the other main surface opposite to the pair of electrode pads, an extremely thin flat single-plate thermistor can be obtained. These electrode films are formed by PVD film forming techniques such as sputtering.

In addition, the crystal oscillator plate may be an AT-cut or SC-cut crystal oscillator plate, or an XY-cut crystal oscillator plate, etc.

[Effect of the invention] Based on the present invention, a crystal oscillator device with a temperature sensor can be obtained which can cope with ultra-miniaturization and ultra-thinness, can well detect temperature changes of the crystal oscillator device, and has excellent electrical characteristics.

Hereinafter, the implementation of the present invention will be described in detail with reference to the accompanying drawings.

The crystal oscillator with temperature sensor in the embodiment of the present invention is composed of a crystal oscillator Xtl and a temperature sensor. As shown in FIG1 , the crystal oscillator Xtl is composed of a crystal oscillator plate 1, a first sealing member 2, and a second sealing member 3, and has a structure in which the first sealing member 2, the crystal oscillator plate 1, and the second sealing member 3 are stacked in this order. In addition, the temperature sensor 4 is conductively bonded to the upper surface of the crystal oscillator Xtl.

The crystal oscillator plate 1 is composed of an AT-cut crystal oscillator plate and is in the shape of a rectangular plate as a whole. The crystal oscillator plate 1 is composed of an oscillating portion 11; a holding portion 13 and a holding portion 13t respectively connected to two corners of the oscillating portion 11; and a frame portion 12 arranged on the periphery of the oscillating portion 11 and connected to the holding portion 13 and the holding portion 13t. In addition, a through portion 14 is formed in an annular shape between the oscillating portion 11 and the frame portion 12 in addition to the holding portion 13 and the holding portion 13t.

The vibration portion 11 is rectangular, having a pair of opposing long sides, a pair of opposing short sides, and four corners. However, the vibration portion 11 can also be viewed as a square in a top view. In addition, rectangular excitation electrodes 111 and 112 are respectively formed on one main surface and the other main surface (front and back) in the approximate middle part of the vibration portion 11. Strip-shaped lead electrodes 111a and lead electrodes 112a are connected to the corners of the excitation electrodes 111 and 112 respectively. The lead electrodes 111a and lead electrodes 112a are led out toward the two ends of one side (the corners of the vibration portion), respectively. The lead electrode 111a is led out to the frame portion 12 via the holding portion 13, and the lead electrode 112a is led out to the frame portion 12 via the holding portion 13t, and finally led out to the terminal electrodes 31 and 32 formed on the second sealing member 3 described later.

Specifically, the lead electrode 111a passes through the surface of the holding portion 13, and is led out to the other main surface through the metal hole (through metal) V1 formed on the frame portion 12, and is further connected to the metal hole V2 formed on the second sealing member 3 described later. In addition, the metal hole V2 is electrically connected to the terminal electrode 31 formed on the other main surface of the second sealing member 3. In addition, the lead electrode 112a passes through the reverse surface of the holding portion 13t, is led out to the other surface of the crystal resonator plate 1, and is electrically connected to the metal hole V3 formed on the opposite second sealing member 3. In addition, the metal hole V3 is electrically connected to the terminal electrode 32 formed on the other main surface of the second sealing member 3.

The excitation electrodes 111, 112 and the extraction electrodes 111a, 112a are composed of a multi-layer metal film, for example, a multi-layer structure in which a Ti (titanium) film is formed in contact with the crystal oscillator plate 1 and an Au (gold) film is formed on the top. As examples of specific thicknesses of the metal films, for example, 5 nm for the Ti film and 200 nm for the Au film can be cited, but they can also be changed according to the desired characteristics.

A thick wall portion 11a is formed on one side of the vibration portion 11. The thick wall portion 11a is configured to extend along the Z' axis direction on one side of the X axis direction and to cover the entire side. The thick wall portion 11a is configured to have a thickness greater than that of the vibration portion 11.

As shown in FIG2 , a holding portion 13 is provided at one corner C1 of the vibration portion 11, and a holding portion 13t is provided at another corner C2, and the holding portion 13 and the holding portion 13t are connected to the frame portion 12. In this embodiment, the vibration portion 11, the holding portion 13, the holding portion 13t, and the frame portion 12 are integrated using a crystal sheet by using photolithography technology and wet etching technology. In addition, dry etching technology may be used instead of wet etching.

As shown in FIG. 1 and FIG. 4 , the retaining portion 13 is configured to be thicker than the vibrating portion 11 and the thick-walled portion 11a, and an inclined slope T2 is formed from the thick-walled portion 11a to the upper surface of the retaining portion 13, and an inclined slope T3 is also formed from the vibrating portion 11 to the retaining portion 13. In addition, the retaining portion 13 is connected to the frame portion 12, and an inclined surface T1 is formed from the retaining portion 13 to the upper surface of the frame portion 12. Based on such a structure, the thickness of each part is set to be vibrating portion 11 < thick-walled portion 11a < retaining portion 13 < frame portion 12. In addition, the thickness of the thick-walled portion 11a may be equal to the thickness of the retaining portion 13. By forming these inclined surfaces, the boundary area can be blunted. In addition, if the height difference in the boundary area is small and the risk of a broken line is low, there will be no practical problem even if the slope is not formed.

The specific dimensions of the crystal oscillator plate 1 are shown below. The crystal oscillator plate 1 is a rectangular AT-cut crystal plate, and its outer dimensions are: 1.2 mm in width and 1.0 mm in length; the outer dimensions of the oscillating portion 11 are: 0.7 mm in width and 0.7 mm in length; the width of the frame portion 12 is: 0.2 mm in width and 0.1 mm in length; the dimensions of the holding portion 13 are: 0.05 mm in width and 0.15 mm in length. Regarding the thickness of each component part, the thickness of the frame portion 12 is 0.04 mm, the thickness of the holding portion 13 is 0.03 mm, the thickness of the thick wall portion 11a is 0.017 mm (17 μm), and the thickness of the oscillating portion 11 is 0.005 mm (5 μm). In addition, it is preferable that the thickness of the thick wall portion 11a is more than 10 μm relative to the thickness of the vibration portion 11, which is advantageous in ensuring mechanical strength.

In addition, in the present embodiment, a structure is adopted in which thinning is achieved only from one main surface of the crystal oscillator plate 1. For example, thinning is performed only from one main surface side using etching technology until the desired frequency (thickness) is achieved. In this case, since the other main surface side is not etched, it is possible to prevent the vibration characteristics from being reduced due to surface roughening caused by etching. However, a structure in which thinning is performed from both main surfaces may also be adopted.

Sealing films S11 and S21 are formed in annular shapes at the outer peripheral ends of the front and back surfaces of the frame portion 12. These sealing films, like the aforementioned electrode films, have a multi-layer structure in which a Ti film is formed in contact with the crystal resonator plate 1 and an Au film is formed on top.

In addition, a connecting electrode 121 and a connecting electrode 122 are formed on the inner circumference of the frame portion 12 at a position away from the holding portion 13 and the holding portion 13t. The connecting electrodes 121 and 122 are respectively formed of a strip-shaped metal film formed from the upper surface of the frame portion 12 through the inner side surface and extending to the lower surface of the frame portion 12. The upper portions of these connecting electrodes 121 and 122 are respectively connected to the terminal electrodes 31 and 32 of the first sealing member 2 through the metal holes described later, and the terminal electrodes 31 and 32 are electrically connected to the electrode pads 41 and 42 of the temperature sensor 4 described later. In addition, lower portions of the connection electrodes 121 and 122 are also electrically connected to the terminal electrodes 33 and 34 of the second sealing member 3 via metal holes V4 and V5, respectively, which will be described later.

The first sealing member 2 is made of a rectangular plate-shaped AT-cut crystal piece, and its outer shape and size are the same as those of the crystal resonator plate 1. On the other main surface of the first sealing member 2 (the surface facing the crystal resonator plate 1), an annular sealing film S12 corresponding to the sealing film S11 is formed.

In addition, on one main surface of the first sealing member 2, rectangular electrode pads 21 and 22 having long sides and short sides are arranged in parallel, and the electrode pad 21 is led out to the other main surface through a metal hole; the electrode pad 22 is led out to the other main surface through a metal hole. The electrode pad 21 and the electrode pad 22 are formed at the center of the short side of the first sealing member 2 and are located at the two ends of the long side direction (Z' axis direction of the AT-cut crystal piece) of the first sealing member 2. In addition, a structure in which the electrode pads 21 and the electrode pads 22 are formed at the two ends of the short side (X axis direction of the AT-cut crystal piece) due to the wiring structure of the crystal oscillator piece 1 can also be adopted.

The second sealing member 3 is made of a rectangular plate-shaped AT-cut crystal piece, and its outer shape and outer dimensions are the same as those of the crystal resonator plate 1. On the surface of the second sealing member 3 facing the crystal resonator plate 1, a ring-shaped sealing film S22 corresponding to the sealing film S21 is formed.

In addition, terminal electrodes 31, 32, 33, and 34 are formed on the surface of the second sealing member 3 that is not facing the crystal resonator plate 1. The terminal electrodes 31, 32, 33, and 34 are rectangular in shape and are formed at the corners of the second sealing member. The terminal electrodes 31 and 32 are electrically connected to the excitation electrodes 111 and 112, respectively; the terminal electrodes 33 and 34 are electrically connected to the electrode pads 41 and 42 of the temperature sensor 4 described later, respectively. In addition, the metal film constituting these terminal electrodes adopts a layered structure of Ti film, NiTi film, and Au film.

In addition, in the second sealing member 3, a metal hole V2 is formed near the area corresponding to the holding portion 13, penetrating the front and back surfaces, and is electrically connected to the aforementioned metal hole V1. In addition, a metal hole V3 is formed near the area corresponding to the holding portion 13t, penetrating the front and back surfaces. Based on such a structure, the lead electrode 111a formed on the above-mentioned crystal resonator plate 1 is connected to the terminal electrode 31 via the metal hole V2, and the lead electrode 112a is connected to the terminal electrode 32 via the metal hole V3. In addition, metal holes V4 and V5 are formed corresponding to the connecting electrodes 121 and 122, respectively. The metal holes V4 and V5 are electrically connected to the terminal electrodes 33 and 34, respectively. Based on such a structure, the terminal electrodes 31 and 32 of the crystal oscillator Xtl and the terminal electrodes 33 and 34 of the temperature sensor are arranged on the long sides and face each other. In addition, a structure in which the terminal electrodes 31 and 32 of the crystal oscillator Xtl and the terminal electrodes 33 and 34 of the temperature sensor are arranged diagonally can also be adopted due to a design change of the electrode wiring.

The temperature sensor 4 described later is mechanically and electrically connected to the electrode pads 21 and 22 of the first sealing member 2. The temperature sensor 4 is a rectangular NTC flat single-plate thermistor (a thermistor plate of a flat single-layer structure), and the rectangular plate-shaped flat single-plate thermistor 40 has a thickness G2. A common electrode 43 is formed on the entire main surface of one side of the flat single-plate thermistor 40; an electrode pad 41 and an electrode pad 42 are formed on the other main surface, and the electrode pad 41 and the electrode pad 42 are separated by a certain distance G1 in the long side direction of the main surface. The electrode pad 41 and the electrode pad 42 are formed at the center of the short side of the flat single-board thermistor 40 and are located at both ends of the long side of the flat single-board thermistor 40. In addition, a structure in which the electrode pad 41 and the electrode pad 42 are formed at both ends of the short side due to the wiring structure of the flat single-board thermistor 40 may be adopted. In this structure, by arranging and mounting the common electrode 43 formed on the entire main surface of one side of the flat single-board thermistor 40 at a position overlapping with the vibration part 11 of the crystal resonator 1, preferably, with the front excitation electrode 111 and the back excitation electrode 112 formed on the vibration part 11, it can play a role as a barrier to prevent unnecessary noise from reaching the vibration part 11.

The temperature sensor 4 is a terminal that is a resistor body formed by one electrode pad 41 and the other electrode pad 42 formed on a flat single-plate thermistor 40, and a conductive path is provided from the one electrode pad 41 to the other electrode pad 42 via a common electrode 43. Based on such a structure, the cross-sectional area of the conductive path is greatly increased, and a path is obtained in which the electrode pads 41, the electrode pads 42 and the common electrode 43 face each other, thereby being able to reduce the resistance value with a smaller area, making the characteristics easy to stabilize and improving the withstand voltage performance.

However, when the structure in which the electrode pad 41 and the electrode pad 42 are close to each other is adopted, the conductive path is sometimes dominated by the flow path from the electrode pad 41 to the electrode pad 42, depending on the applied voltage, and the desired resistance value cannot be obtained. Therefore, in practice, the distance G2a between the electrode pad 41 and the common electrode 43, the distance G2b between the electrode pad 42 and the common electrode 43, and the distance G1 between the electrode pad 41 and the electrode pad 42 are set to satisfy G2a+G2b＜G1. Based on such a setting, the desired resistance value can be obtained, thereby stabilizing the accuracy of the temperature sensor 4.

The larger the contact area between the temperature sensor 4 and the crystal oscillator Xtl, the more accurately the temperature of the crystal oscillator Xtl can be measured. Therefore, the larger the electrode pads 41 and 42 formed on the temperature sensor 4 are relative to the area of the temperature sensor 4, the better. However, if they are too large, it is easy to cause the adjacent electrode pads 41 and 42 to short-circuit or cause a short-circuit due to the conductive resin adhesive. If the contact area becomes smaller, the temperature detection accuracy of the crystal oscillator Xtl will decrease. Therefore, depending on the desired resistance value, the total area of the electrode pad 41 and the electrode pad 42 is 40% to 85% of the area of the temperature sensor 4, so that stable temperature detection can be achieved. If the size is less than 40%, the electrode pad 41 and the electrode pad 42 of the temperature sensor 4 are too small, so that the temperature information of the crystal oscillator device Xtl cannot be correctly detected. In addition, when a thermistor is used for the temperature sensor 4, its resistance value is too high, and the temperature detection capability of the temperature sensor 4 may be reduced. In addition, if the size is more than 85%, the risk of short circuit including the conductive resin adhesive increases, and if a short circuit occurs, the function of the temperature sensor 4 will fail.

Specific dimensions are shown below. The outer dimensions of the temperature sensor 4 (outer dimensions of the thermistor) are: long side 1.2 mm, short side 0.6 mm, thickness 0.05 mm, and its area is 0.72 mm ² . In addition, the outer dimensions of the electrode pads 41 and 42 formed on the flat single-board thermistor 40 are: long side 0.6 mm (short side of the flat single-board thermistor 40), short side 0.4 mm (long side of the flat single-board thermistor 40), and its area is 0.24 mm ² . Based on such a structure, the total area of the electrode pad 41 and the electrode pad 42 is set to about 66% of the area of the temperature sensor 4, and the distance G2a between the electrode pad 41 and the common electrode 43 and the distance G2b between the electrode pad 42 and the common electrode 43 are set to 0.05 mm respectively, and the distance G1 between the electrode pad 41 and the electrode pad 42 is set to 0.4 mm, so that G2a+G2b＜G1 holds.

Other specific examples are as follows. The outer dimensions of the temperature sensor 4 (outer dimensions of thermistor) are: long side 0.8 mm, short side 0.6 mm, thickness 0.05 mm, and its area is 0.48 mm ² . In addition, the outer dimensions of the electrode pads 41 and 42 formed on the flat single-board thermistor 40 are: long side 0.52 mm (short side of the flat single-board thermistor 40), short side 0.3 mm (long side of the flat single-board thermistor 40), and its area is 0.156 mm ² . Based on such a structure, the total area of the electrode pad 41 and the electrode pad 42 is set to about 65% of the area of the temperature sensor 4, and the distance G2a between the electrode pad 41 and the common electrode and the distance G2b between the electrode pad 42 and the common electrode 43 are set to 0.05 mm respectively, and the distance G1 between the electrode pad 41 and the electrode pad 42 is set to 0.12 mm, so that G2a+G2b＜G1 holds.

Another specific example is shown below. The outer dimensions of the temperature sensor 4 (outer dimensions of thermistor) are: long side 0.7 mm, short side 0.6 mm, thickness 0.04 mm, and its area is 0.42 mm ² . In addition, the outer dimensions of the electrode pads 41 and 42 formed on the flat single-board thermistor 40 are: long side 0.58 mm (short side of the flat single-board thermistor 40), short side 0.3 mm (long side of the flat single-board thermistor 40), and its area is 0.174 mm ² . Based on such a structure, the total area of the electrode pad 41 and the electrode pad 42 is set to about 83% of the area of the temperature sensor 4, and the distance G2a between the electrode pad 41 and the common electrode, the distance G2b between the electrode pad 42 and the common electrode 43 are set to 0.04 mm, and the distance G1 between the electrode pad 41 and the electrode pad 42 is set to 0.09 mm, so that G2a+G2b<G1 is established. In addition, the above dimensions can be appropriately designed according to the dimensions and characteristics of the crystal oscillator device and the required specifications of the crystal oscillator device with a temperature sensor.

The flat single-plate thermistor 40 is made, for example, by mixing Mn-Fe-Ni materials with an adhesive and the like into a slurry, then using a screen printing technique or a doctor blade technique or other thick film forming technique to make a green sheet of a thermistor wafer, and then using a sintering technique to sinter it into a plate-shaped thermistor wafer. In addition, the material is not limited to Mn-Fe-Ni materials, and Mn (manganese)-Co (cobalt) or Fe-Ni materials may also be used.

The plate-shaped thermistor wafer is sputtered to form an electrode film (metal film), and patterned using photolithography. As a specific metal material, a layered structure of a Ti film, a NiTi film, and an Au film can be used, as with the metal film constituting the terminal electrode, or other metal film structures can be used. When the layered structure of the Ti film, the NiTi film, and the Au film is used, when the thermistor is finally soldered to the mounting substrate, a stable conductive joint that is not prone to solder corrosion can be achieved. In addition, the metal film structure of the electrode pads 41 and 42 may be different from the metal film structure of the common electrode 43. For example, the metal film structure of the electrode pads 41 and 42 may adopt a stacked structure of the Ti film, NiTi film, and Au film, while the metal film structure of the common electrode 43 may adopt a stacked structure of Ti film and Au film.

By forming a metal film on the single-layer flat single-plate thermistor 40 using a thin film forming technique such as sputtering, an extremely thin-walled flat single-plate thermistor 40 can be obtained. In addition, the surface roughness of the flat single-plate thermistor 40 can be reduced by grinding and polishing the surface when the flat single-plate thermistor 40 is in the state of a plate-shaped thermistor wafer. Based on such a structure, the electrode film (metal film) can be stably formed, and the manufacturing accuracy can be improved, so that the performance of the temperature sensor 4 can achieve high accuracy.

As shown in FIG4 , the crystal oscillator device Xtl adopts a structure in which a first sealing member 2, a crystal oscillator plate 1, and a second sealing member 3 are stacked in this order. As mentioned above, these components as each component are composed of a crystal plate, and their surfaces are mirror-polished to be smooth. As a specific example, it is preferred that the average surface roughness Ra = 0.3 to 0.1 nm. By forming the sealing film S11, the sealing film S12, the sealing film S21, and the sealing film S22 on such a smooth surface, the surface of the metal film (the uppermost Au film) on the surface also becomes very smooth.

The first sealing member 2 made of quartz crystal, which is a brittle material, and the crystal resonator plate 1 are bonded together, and the crystal resonator plate 1 and the second sealing member 3 made of quartz crystal, which is a brittle material, are bonded together by applying pressure (gold-gold diffusion bonding) by a diffusion bonding method after surface treatment of Au of the metal film. As a result, the vibrating portion 11 of the crystal resonator plate 1 is hermetically sealed by the sealing portion S1 (sealing film S11, sealing film S12) and the sealing portion S2 (sealing film S21, sealing film S22) while being surrounded by the sealing member 2, the sealing member 3, and the frame portion 12. At this time, the frame portion 12 of the crystal resonator plate 1 is mechanically bonded to the first sealing member 2 and the second sealing member 3 while the vibrating portion 11 of the crystal resonator plate 1 is not in contact with the first sealing member 2 and the second sealing member 3. In addition, the hermetically sealed interior is a vacuum or inert gas environment.

According to the present embodiment, the vibrating portion 11 of the crystal vibrating plate 1 is connected by the holding portion 13 and the holding portion 13t extending only at two locations, and is in a state of not contacting the first sealing member 2 and the second sealing member 3. At the same time, the frame portion 12 of the crystal vibrating plate 1 is mechanically bonded to the first sealing member 2 and the second sealing member 3, so that the vibrating portion 11 of the crystal vibrating plate 1 is not easily affected by external stress. In particular, the influence of external stress caused by the conductive resin adhesive R1 or the resin adhesive R2 generated when the flat single-plate thermistor 40 is bonded is not easily transmitted to the vibrating portion, so that the characteristics of the vibrating portion 11 are stable.

The temperature sensor 4 is mounted on the upper surface of the crystal oscillator Xt1 having the above structure, that is, on one main surface of the first sealing member 2. The electrode pads 21 and 22 formed on the upper surface of the crystal oscillator Xt1 and the electrode pads 41 and 42 formed on the temperature sensor 4 composed of the flat single-plate thermistor 40 are surface-bonded by the conductive resin adhesive R1. At this time, the conductive resin adhesive R1 is surface-bonded to the portion overlapping with the frame portion 12 of the crystal oscillator plate 1 in a plan view.

The electrode pads 21 and 22 are configured to have a larger area than the electrode pads 41 and 42, so that the conductive resin adhesive R1 can conductively bond the crystal oscillator Xtl and the temperature sensor 4 in a rounded state, thereby improving the bonding strength between the two. The conductive resin adhesive R1 adopts a structure in which conductive fillers such as silver powder or silver flakes are added to a paste-like silicone resin adhesive material, and thus has excellent thermal conductivity.

In addition, in the area including the center of gravity O of the first sealing member 2, the temperature sensor 4 overlaps with the vibration portion 11 of the crystal resonator 1 in a plan view, and the first sealing member 2 and the temperature sensor 4 are surface-bonded by the resin adhesive R2 in a state where the blank area between the conductive resin adhesive R1 and the conductive resin adhesive R1 is filled. The resin adhesive R2 is composed of, for example, a paste-like epoxy resin adhesive material, and thus has a structure in which the thermal conductivity is lower than the thermal conductivity of the conductive resin adhesive R1 and the pencil hardness is lower than the pencil hardness of the conductive resin adhesive R1.

Alternatively, a soft (low pencil hardness) conductive resin adhesive R1 may be placed at both ends of the axial direction where the thermal expansion coefficient of the crystal axis becomes larger. In the case of AT-cut crystal pieces, the planes are the X-axis and the Z'-axis, but since the thermal expansion coefficient decreases in the Z'-axis direction, a relatively soft conductive resin adhesive R1 may be placed along the Z'-axis direction (at both ends in the Z'-axis direction).

In addition, in the present embodiment, the flat single-plate thermistor 40 made of Mn-Fe-Ni material has a smaller thermal expansion coefficient than the first sealing member 2 made of crystal, and in particular, the thermal expansion difference produced in the long side direction is larger. Therefore, by configuring a relatively soft conductive resin adhesive R1 at both ends in the long side direction, a structure that can reduce the influence of thermal stress can be obtained.

In the present embodiment, more than half of the top view area of the temperature sensor 4 is surface-bonded to the surface of the first sealing member 2 via the conductive resin adhesive R1 and the resin adhesive R2. Specifically, about 66% of the top view area of the temperature sensor 4 is surface-bonded via the conductive resin adhesive R1, and about 30% of the top view area of the temperature sensor 4 is surface-bonded via the resin adhesive R2, so that overall, about 96% of the top view area of the temperature sensor 4 is surface-bonded.

In the present embodiment, the electromechanical bonding and mechanical bonding between the crystal oscillator Xtl and the flat single-board thermistor 40 are achieved only by surface bonding through the resin adhesives (conductive resin adhesive R1 and resin adhesive R2), thereby being able to absorb the stress and impact borne by the flat single-board thermistor 40, which is easily weakened due to thinning, thereby being able to avoid the formation of cracks or gaps in the flat single-board thermistor 40.

In addition, since the top view area of the conductive resin adhesive R1 is larger than the top view area of the resin adhesive R2, in addition to good thermal conductivity between the electrode pads, the temperature sensor 4 can detect the temperature of the crystal oscillator Xtl with high accuracy in a state with a small delay. In addition, the top view area formed by the total surface bonding achieved by the two types of resin adhesives is at least 50%. By adopting such a structure, sufficient heat exchange can be carried out between the crystal oscillator device Xtl and the flat single-board thermistor 40 serving as the temperature sensor 4, thereby eliminating the difference between the ambient temperature sensed by the crystal oscillator device Xtl and the ambient temperature sensed by the flat single-board thermistor 40, thereby achieving good temperature detection.

In addition, since the flat single-board thermistor 40 is surface-bonded with the vibrating portion 11 of the crystal resonator 1 in the region including the center of gravity of the first sealing member 2, the portion overlapping the vibrating portion 11 in a plan view is surface-bonded by the resin adhesive R2, not only is the influence of external stress caused by the resin adhesive R2 generated when the flat single-board thermistor 40 is bonded, but also the external stress can be prevented from being strongly applied to the flat single-board thermistor 40 itself. In addition, heat exchange between the crystal resonator device Xtl and the flat single-board thermistor 40 can be efficiently performed without waste via the center of gravity O of the first sealing member 2, so that heat dissipation in one direction can be prevented, and a temperature difference with respect to the mutual ambient temperature is less likely to occur.

In addition, since the flat single-board thermistor 40 is surface-bonded with the frame portion 12 of the crystal oscillator piece 1 at a portion overlapping the frame portion 12 in a plan view, via the conductive resin adhesive R1 having high thermal conductivity, heat transfer from the first sealing member 2 directly to the crystal oscillator piece 1 is promoted, so that sensitive heat exchange can be smoothly performed between the crystal oscillator device Xtl and the flat single-board thermistor 40 in response to changes in the external ambient temperature. Therefore, the temperature of the crystal oscillator device Xtl can be detected more accurately.

In addition, the conductive resin adhesive R1 and the resin adhesive R2 are not limited to the exemplified resin materials, and may also adopt an optimal combination structure of silicone resin, polyurethane resin, epoxy resin, etc.

In this embodiment, a three-layer crystal oscillator device Xtl is adopted, which is formed by bonding a plate-shaped crystal oscillator plate 1, a first sealing member 2, and a second sealing member 3, so that a thin crystal oscillator device structure can be obtained. In addition, a structure in which a flat single-plate thermistor 40 is used and bonded as a temperature sensor 4 is adopted, so that not only stable electrical characteristics can be obtained, but also a crystal oscillator device with a temperature sensor that is thinner and smaller than the case of using a general-purpose stacked thermistor can be obtained.

In addition, electrode pads with high thermal conductivity are formed at the ends of the first sealing member 2 and the flat single-board thermistor 40, and they are bonded by the conductive resin adhesive R1 having higher thermal conductivity than the resin adhesive R2, so that heat exchange can be performed between the crystal oscillator device Xtl and the flat single-board thermistor 40 while sensitively responding to changes in the external environmental temperature. Therefore, the temperature of the crystal oscillator device Xtl can be detected more accurately.

In the crystal oscillator Xtl of the above structure, the temperature information (e.g., current value, voltage value, resistance value, etc.) detected by the flat single-plate thermistor 40 as the temperature sensor 4 is connected to the outside via the independent terminal electrodes 33 and 34. In addition, the frequency information in the crystal oscillator Xtl is appropriately temperature compensated by an external compensation circuit, etc., so that the correct frequency can be obtained.

According to the present embodiment, a thick-walled portion 11a is formed along almost the entire area of the side of the vibration portion 11 where the retaining portion 13 and the retaining portion 13t are formed, while the other side has a thickness corresponding to a thin-walled vibration plate of a high frequency. Therefore, the vibration excited in the vibration portion 11 can vibrate in a state where it is not easily affected by the boundary conditions caused by the thick-walled portion 11a, so that it is not easy to cause distortion, and a crystal vibration plate 1 that can maintain the CI value (series resonance resistance) in a good state can be obtained. In addition, the mechanical strength of the vibration portion 11 can also be improved by the thick-walled portion 11a. In addition, the vibration portion 11 of the present embodiment can also adopt a structure in which the thick-walled portion 11a is not formed. In this case, the areas of the excitation electrodes 111 and 112 of the vibration portion 11 can be made larger.

In addition, as described above, the holding portion 13 is thicker than the thick wall portion 11a, or has the same thickness as the thick wall portion 11a, and a sloped portion is formed between the frame portion 12 and the holding portion 13, and between the thick wall portion 11a and the vibration portion 11. As described above, the formation of the sloped portion can blunt the boundary. As a result, the lead electrode 111a that is led out from the excitation electrode 111 to the side of the crystal oscillator plate 1 can be formed on the sloped portion, thereby forming a structure that does not pass through the sharp corner area (height difference portion), and can prevent the conduction performance of the electrode from being reduced and the electrode from being disconnected. As a result, a crystal oscillator plate 1 with good electrical characteristics can be obtained.

According to the present embodiment, although a structure is adopted in which the frame portion 12 and the vibration portion 11 are connected by the holding portion 13 and the holding portion 13t, the thickness of the holding portion 13t is smaller than the thickness of the holding portion 13. Therefore, by holding with a plurality of holding portions, the mechanical strength can be stabilized; at the same time, by providing a holding portion 13t with a small (thin) thickness, the vibration of the vibration portion 11 can be prevented from being obstructed. Thus, the reduction in the electrical characteristics of the crystal vibration device Xtl can be suppressed, and practical electrical performance can be ensured. In addition, without being limited to the present embodiment, a structure in which the vibration portion 11 is connected to only one portion of the holding portion 13 can also be adopted.

In addition, in the crystal resonator piece 1, the through portion 14 may be replaced with a thin-walled portion. In this case, the resonator portion 11 is connected to the frame portion 12 via the holding portion and the thin-walled portion.

In addition, in this embodiment, a multilayer structure of Ti and Au is exemplified as an example of the metal film of the driving electrode and the metal film for sealing, but the present invention is not limited to this metal film. For example, a multilayer structure of Ti, NiTi, and Au may also be used.

In addition, the sealing members 2 and 3 are bonded to the crystal resonator plate 1 by diffusion bonding, but brazing using, for example, AuSn alloy solder may be used, or other solders, such as Sn alloy solder, may be used. In the case of brazing, the metal film structure is also different, for example, a structure in which an Ag or Cu film is formed on a Cr base layer, or a structure in which an alloy film with Au is formed may be used.

In the above description, a crystal piece is used as the material of the first sealing member 2 and the second sealing member 3, but a sealing body made of other brittle materials such as a glass material or a ceramic material may be used instead of the crystal piece. In addition, a plate-like structure is exemplified as the shape thereof, but a recess may be provided at a position facing the crystal oscillator plate 1. When such a recess is provided, the chance of the oscillating portion 11 contacting the sealing member can be reduced, thereby stabilizing the characteristics of the crystal oscillator device Xtl.

In addition, the temperature sensor 4 has a structure in which a common electrode 43 is formed on the entire main surface of one side, and an electrode pad 41 and an electrode pad 42 are formed on the main surface of the other side at a certain distance G1 in the long side direction, but a structure in which only separate electrodes are formed on the main surface of the other side may also be adopted. In addition, it is not limited to NTC thermistors, and PTC thermistors may also be replaced.

Another embodiment 1 is described with reference to Fig. 7. The detailed structure of the crystal oscillator Xtl is omitted in Fig. 7. A temperature sensor 4 is mounted on the upper surface of the crystal oscillator Xtl, but the structure of the temperature sensor 4 is different from that of the above-mentioned embodiment.

Specifically, the temperature sensor 4 has a structure in which an electrode pad 44 and an electrode pad 45 are formed on the other main surface of the flat single-board thermistor 40, and although an inter-electrode gap G3 is formed, an electrode film is not formed on the main surface of one side of the flat single-board thermistor 40. Therefore, a conductive path is formed between the electrode pad 44 and the electrode pad 45, and the temperature sensor 4 can function as a thermistor.

By bonding the electrode pads 44 and 45 to the electrode pads 23 and 24 on the upper surface of the first sealing member 2, respectively, using the conductive resin adhesive R1, the two electrode pads are conductively bonded, thereby enabling the two to be bonded in a state of good thermal conductivity. In addition, in this embodiment, the resin adhesive R2 with good thermal conductivity is filled between the conductive bonding materials. Based on these structures, the main surface of the other side of the temperature sensor 4 is in a state of being bonded to the crystal oscillator Xtl surface in its entirety.

In this embodiment, a structure is adopted in which a temperature sensor 4 composed of a flat single-plate thermistor 40 is covered with a resin material R3. In the structure in which the resin material R3 covers the upper surface of the crystal oscillator Xtl, the temperature sensor 4, the electrode pad 23 and the electrode pad 24 provided in the crystal oscillator Xtl, and the conductive resin adhesive R1 and the resin adhesive R2 are covered. The resin material R3 used here adopts a structure in which a silicon dioxide ( _SiO2 ) filler is added to an epoxy resin, and has a thermal conductivity lower than the thermal conductivity of the conductive resin adhesive R1. In addition, in addition to epoxy resin, the resin material R3 may also be other resin materials such as polyurethane resin, silicone resin, etc. Based on such a structure, it is possible to obtain an effect of preventing the heat detected by the temperature sensor 4 from escaping to the outside.

Based on the structure of this embodiment, the temperature change of the crystal oscillator Xtl can be detected by the temperature sensor 4 with less delay via the conductive resin adhesive R1 and the resin adhesive R2; in addition, since the temperature sensor 4 is covered with the resin material R3 having a lower thermal conductivity than the conductive resin adhesive R1 formed at the end, the heat absorbed by the temperature sensor 4 will not leak to the outside. Therefore, the temperature of the crystal oscillator Xtl during operation can be accurately detected, thereby enabling high-precision temperature detection. In addition, in addition to the temperature sensor 4, an IC component having an oscillation circuit and a temperature compensation circuit can be mounted on the upper surface of the crystal oscillator Xtl, and electrically connected to the crystal oscillator Xtl and the temperature sensor 4. Based on such a structure, a crystal oscillator Xtl constituting a temperature compensation type crystal oscillator can be obtained.

In conjunction with FIG8 , the other embodiment 2 is described. The detailed structure of the crystal oscillator Xtl is omitted in FIG8 . A structure in which a temperature sensor 4 is mounted on the upper surface of the crystal oscillator Xtl is adopted. The structure of the temperature sensor 4 is the same as that of the other embodiment 1 (refer to FIG7 ), but the configuration of the temperature sensor 4 is different from that of the other embodiment 1.

An electrode pad 23 and an electrode pad 24 are formed on the upper surface of the first sealing member 2. Unlike the other embodiment 1 described above (see FIG. 7 ), the electrode pad 23 and the electrode pad 24 are formed to be biased to the left side of the drawing. As a result, an area where no electrode pad is formed can be ensured on the upper surface of the first sealing member 2. This area can be used as an adjustment area 25. In the case where the first sealing member 2 is made of a light-transmitting material, the adjustment area 25 can allow an energy beam B such as a laser beam to penetrate. Therefore, by irradiating the metal film formed on the crystal oscillator plate 1 with the energy beam B and removing a portion of these metal films, the frequency of the crystal oscillator device Xtl can be adjusted.

Alternatively, a metal film for adjustment may be formed in advance on the inner side of the first sealing member 2, and the metal film for adjustment may be irradiated with the energy beam B to vaporize the metal film for adjustment and adhere to the metal film formed on the crystal resonator plate 1, thereby adjusting the frequency of the crystal resonator device X0.

Furthermore, the resin material R3 is formed to cover the entire upper surface (one main surface) of the first sealing member 2. Thus, the temperature sensor 4 is also entirely covered by the resin material R3. Alternatively, the resin material R3 may be formed only in the mounting area of the temperature sensor 4. In this case, since the adjustment area 25 is not covered by the resin material R3, there is an advantage that the frequency can be adjusted using the energy beam B after the temperature sensor 4 is bonded.

Based on this embodiment, almost the entire surface of the other main surface of the temperature sensor 4 is bonded to the crystal oscillator Xtl through the conductive resin adhesive R1 and the resin adhesive R2, so that the temperature sensor 4 can reliably and accurately detect the temperature change of the crystal oscillator Xtl. In addition, by covering with the resin material R3, heat diffusion can be suppressed. Based on these structures, a crystal oscillator with a temperature sensor that can perform high-precision temperature detection can be obtained. Furthermore, by using the adjustment area 25, the frequency of the crystal oscillator Xtl can be adjusted after airtight sealing or after the temperature sensor 4 is installed, thereby improving the electrical characteristics.

The embodiments disclosed herein are examples of various aspects and do not constitute a basis for restrictive interpretation. Therefore, the technical scope of the present invention cannot be interpreted solely based on the above embodiments, but must be defined based on the description of the claims. In addition, all changes within the same meaning and scope as the claims are included.

This application claims priority based on Japanese Patent Application No. 2021-174379 filed in Japan on October 26, 2021. It goes without saying that all the contents of that application are incorporated into this application.

Xtl: Crystal oscillator 1: Crystal oscillator 11: Oscillating portion 11a: Thick wall portion 111, 112: Excitation electrode 111a, 112a: Lead electrode 12: Frame portion 13, 13t: Holding portion 14: Penetration portion 2: First sealing member 21, 41, 42: Electrode pad 3: Second sealing member 31, 32: Terminal electrode 4: Temperature sensor 40: Flat single-board thermistor 43: Common electrode G1, G2a, G2b: Distance G2: Thickness S11, S12, S21, S22: Sealing film S1, S2: Sealing portion T1, T2, T3: Inclined surface V1, V2, V3, V4, V5: metal holes R1: conductive resin adhesive R2: resin adhesive R3: resin material

The details of one or more embodiments of the subject matter described in this specification are explained in the following figures and descriptions. Other features, aspects and advantages of the subject matter of this specification will become apparent from the description, figures and scope of the patent application, including: Figure 1 is an exploded perspective view of the components of the crystal oscillator device with a temperature sensor of this embodiment. Figure 2 is a top view of the main surface of one side of the crystal oscillator plate. Figure 3 is a top view of the main surface (bottom surface) of the other side of the second sealing member. Figure 4 is a schematic cross-sectional view of the components in Figure 1 after assembly. Figure 5 is a top view of the main surface of one side of the flat single-board thermistor. Figure 6 is a top view of the main surface of the other side of the flat single-board thermistor. Figure 7 is a schematic cross-sectional view of the crystal oscillator device with a temperature sensor of another embodiment 1. Figure 8 is a schematic cross-sectional view of a crystal oscillator device with a temperature sensor according to another embodiment 2.

Xtl: Crystal oscillator device

1: Crystal oscillator

11: Vibration part

11a: Thick wall part

13, 13t: Holding part

2: First sealing component

21, 41, 42: Electrode pads

3: Second sealing member

31, 32: Terminal electrode

4: Temperature sensor

43: Common electrode

G1, G2a, G2b: distance

G2:Thickness

S1, S2: Sealing part

T1, T2: Inclined surface

R1: Conductive resin adhesive

R2: Resin adhesive

Claims (3)

A crystal oscillator with a temperature sensor comprises a crystal oscillator plate, a first sealing member bonded to the upper surface of the crystal oscillator plate, and a second sealing member bonded to the lower surface of the crystal oscillator plate; and a flat single-board thermistor as the temperature sensor, wherein: a plurality of electrode pads are formed on the first sealing member and the flat single-board thermistor, and the electrode pads of the first sealing member and the electrode pads of the flat single-board thermistor are electrically connected to each other. The first sealing member and the flat single-board thermistor are surface-bonded through the resin adhesive; and the flat single-board thermistor and the crystal oscillator are located on opposite sides of the first sealing member; more than half of the bonding surface between the flat single-board thermistor and the first sealing member is surface-bonded through the conductive resin adhesive and the resin adhesive; the thermal conductivity of the conductive resin adhesive is greater than the thermal conductivity of the resin adhesive. A crystal oscillator device with a temperature sensor as described in claim 1, wherein: the crystal oscillator is a structure consisting of an oscillating portion having a pair of excitation electrodes, a retaining portion extending from at least one portion of the oscillating portion, a through portion surrounding the periphery of the oscillating portion, and a frame portion surrounding the periphery of the through portion and connected to the retaining portion; the first sealing member and the second sealing member are plate-shaped structures; and, between the oscillating portion of the crystal oscillator and the When the first sealing member and the second sealing member are not in contact, the frame of the crystal oscillator is mechanically bonded to the first sealing member and the second sealing member; In the area including the center of gravity of the first sealing member, the portion of the flat single-plate thermistor that overlaps with the oscillating portion of the crystal oscillator when viewed from above is bonded to the surface by the resin adhesive, and the portion of the flat single-plate thermistor that overlaps with the frame of the crystal oscillator when viewed from above is bonded to the surface by the conductive resin adhesive. A crystal oscillator device with a temperature sensor as described in claim 1 or 2, wherein: the flat single-board thermistor is covered with a resin material.