TW202333450A - Temperature sensor-equipped crystal oscillator device - Google Patents

Abstract

A crystal oscillator plate (1) comprises an AT-cut crystal oscillator plate, and as a whole, has a rectangular, plate-like shape. The crystal oscillator plate (1) comprises an oscillating part (11), holding parts (13, 13t) connected to the oscillating part (11), and a frame body section (12) which is connected to the holding parts (13, 13t) and is positioned along the outer periphery of the oscillating part (11). Other than the holding parts (13, 13t), through-holes (14) are formed perimetrically between the oscillating part (11) and the frame body section (12). In addition, a thermistor flat single panel (40) is surface-bonded as a temperature sensor (4) onto a first sealing member (2) via a conductive resin adhesive (R1) and a resin adhesive (R2). The thermal conductivity of the conductive resin adhesive (R1) is greater than the thermal conductivity of the resin adhesive (R2).

Description

Crystal vibration device with temperature sensor

The present invention relates to a crystal vibration device with a temperature sensor in which a temperature sensor is installed in the crystal vibration device.

In recent years, as various electronic devices have become more precise, there has been a need for a temperature-compensated crystal oscillator circuit that compensates for frequency fluctuations caused by changes in ambient temperature. As a crystal oscillation device corresponding to this, among crystal oscillators Crystal oscillators with temperature sensors equipped with temperature sensors such as thermistors are widely used.

Such a crystal oscillator with a temperature sensor is configured such that the crystal oscillator is housed in a package made of ceramic, and a thermistor is mounted on the outside to detect the ambient temperature around the crystal oscillator (see Patent document 1).

In addition, the above-mentioned electronic equipment may need to be miniaturized or thinned depending on its use. In this case, an ultra-miniaturized or ultra-thin crystal oscillation device is required. For example, in mobile devices, wearable devices, etc., ultra-miniaturized or ultra-thin crystal vibration devices are required.

As a crystal oscillation device that meets such needs, there is a crystal oscillation device with a three-layer structure in which a crystal oscillation piece is hermetically sealed from above and below with a sheet sealing member (see Patent Document 2). Patent Document 2 discloses an example in which a thermistor is used as a functional part in a crystal oscillator with a three-layer structure.

Patent Document 1 uses a ceramic package in which a housing portion opened in the vertical direction is formed. Furthermore, a structure is adopted in which the crystal oscillator is accommodated in the upper opening and electrically connected to the package, and the thermistor is accommodated in the lower opening and electrically connected to the package.

This structure uses a ceramic package and has two housing portions, so there is a problem that it is difficult to achieve miniaturization and thinning. In addition, Patent Document 2 has a structure in which a thermistor is formed in a crystal oscillator with a three-layer structure. However, according to the drawings, the junction between the crystal oscillator and the thermistor is in an extremely small area. , so the conducted heat is easily dissipated, sometimes making it difficult to perform temperature detection well, and ultimately the temperature of the crystal oscillator cannot be accurately measured, and appropriate temperature compensation may not be performed. In this case, the electrical characteristics of the crystal oscillation device may become unstable, and the operating conditions of the electronic equipment using the crystal oscillation device may also become unstable, resulting in reduced reliability of the electronic equipment.

[Patent Document] [Patent Document 1]: Japanese Patent No. 5900582 [Patent Document 2]: Japanese Patent No. 5888347

In view of the above circumstances, an object of the present invention is to provide a device with a temperature sensor that can cope with ultra-miniaturization and ultra-thinness, can stably and well measure temperature changes of a crystal oscillation device, and has excellent electrical characteristics. Crystal vibration device.

As a technical solution to the above technical problem, the crystal vibration device with a temperature sensor of the present invention includes a crystal vibration piece, a first sealing member joined to the upper surface of the crystal vibration piece, and a first sealing member joined to the crystal vibration piece. a crystal vibration device composed of a second sealing member on the lower surface of the sheet; and a flat single-plate thermistor as a temperature sensor, wherein: the first sealing member and the flat single-plate thermistor are formed with A plurality of electrode pads, the electrode pads of the first sealing member and the electrode pads of the flat single-plate thermistor are surface-joined through a conductive resin adhesive; and, the first sealing member and the flat single-plate thermal resistor are thermally bonded The resistor is surface-joined through a resin adhesive, and more than half of the joint surface between the flat single-plate thermistor and the first sealing member is surface-joined through the conductive resin adhesive and the resin adhesive; so The thermal conductivity of the conductive resin adhesive is greater than the thermal conductivity of the resin adhesive. Among them, the flat single-plate thermistor refers to a flat-shaped single-layer thermistor plate.

Based on the above structure, since it is a crystal oscillation device with a three-layer structure in which the plate-shaped crystal oscillation piece, the first sealing member, and the second sealing member are joined together, a thin crystal oscillation device structure can be achieved. In addition, since it is a structure in which a flat single-plate thermistor is used as a temperature sensor and joined together, not only stable electrical characteristics can be obtained, but also compared with the case of using a general-purpose multilayer thermistor, it is possible to obtain corresponding Thin and compact crystal vibration device with temperature sensor.

In addition, when a flat single-plate thermistor as a temperature sensor is mounted on a crystal vibration device, more than half (50% to 100%) of the planar area of the flat single-plate thermistor passes through the conductive resin adhesive. The resin adhesive is surface-bonded to the surface of the first sealing member of the crystal oscillation device, so that heat exchange between the crystal oscillation device and the flat single-plate thermistor serving as a temperature sensor can be fully performed, Therefore, the difference between the ambient temperature sensed by the crystal vibration device and the ambient temperature sensed by the flat single-plate thermistor can be eliminated, and good temperature detection can be achieved.

Since only resin adhesive is used for the electromechanical and mechanical joints between the crystal oscillation device and the flat single-plate thermistor, stress and stress acting on the flat single-plate thermistor, which tends to weaken due to thinning, can be absorbed. Impact to avoid cracks or chips in the flat single-board thermistor.

In addition, the first sealing member and the flat single-plate thermistor are formed with electrode pads having high thermal conductivity and are joined by a conductive resin adhesive having a higher thermal conductivity than the resin adhesive, so they can react sensitively. The change in external ambient temperature simultaneously enables the heat exchange between the crystal vibration device and the flat single-plate thermistor to proceed smoothly. Therefore, the temperature of the crystal vibration device can be measured more accurately. As a result, more accurate temperature compensation can be achieved, and a crystal oscillation device with stable electrical characteristics and higher reliability can be obtained.

In particular, in the case of a crystal oscillation device having a three-layer structure composed of a crystal vibrating element, a first sealing member, and a second sealing member, the crystal vibrating element tends to follow changes in ambient temperature. However, by combining the crystal vibrating element of the present invention The structure can realize a better structure that can detect temperature information corresponding to the temperature change of the crystal vibrating piece.

In addition to the above structure, the crystal vibrating piece may include a vibrating part in which a pair of excitation electrodes are formed, a holding part extending from at least one part of the vibrating part, and the vibrating part may be surrounded by the vibrating part. A structure composed of an outer peripheral penetration portion and a frame portion surrounding the outer periphery of the penetration portion and connected to the holding portion; the first sealing member and the second sealing member are plate-shaped structures; and, in the In a state where the vibrating portion of the crystal vibrating piece is not in contact with the first sealing member and the second sealing member, the frame portion of the crystal vibrating piece is mechanically joined to the first sealing member and the second sealing member; In a region including the center of gravity of the first sealing member, a portion of the flat single-plate thermistor that overlaps with the vibrating portion of the crystal vibrating piece when viewed from above is surface-bonded with the resin adhesive, and is bonded to the The overlapping portions of the frame portions of the crystal vibrating element are surface-bonded by the conductive resin adhesive when viewed from above.

Based on the above structure, the vibrating portion of the crystal vibrating piece is connected to the holding portion extending from at least one position and is in a state of being out of contact with the first sealing member and the second sealing member, and the frame portion of the crystal vibrating piece is connected to the first sealing member. Since the sealing member and the second sealing member are mechanically joined, the vibrating portion of the crystal vibrating piece is less susceptible to external stress. In particular, the influence of external stress caused by the conductive resin adhesive and the resin adhesive generated when joining the flat single-plate thermistor is not easily transmitted to the vibrating part, so that the characteristics of the vibrating part are stable.

In addition, in the area including the center of gravity of the first sealing member, the flat single-plate thermistor is surface-bonded with the resin adhesive at the portion that overlaps the vibrating portion of the crystal vibrating piece when viewed from above. Therefore, not only joining the flat single-plate thermistor is The influence of external stress caused by the resin adhesive produced when the thermistor is used is not easily transmitted to the vibrating part, and it is also possible to prevent the external stress from acting strongly on the flat single-plate thermistor itself. In addition, since the heat exchange between the crystal oscillation device and the flat single-plate thermistor can be efficiently performed without waste through the center of gravity of the first sealing member, it is possible to prevent heat from being dissipated in one direction and causing inconsistency with each other in terms of ambient temperature. Easy to produce temperature differences.

In addition, since the flat single-plate thermistor is surface-bonded with a conductive resin adhesive having high thermal conductivity at a portion that overlaps with the frame portion of the crystal vibrating element when viewed from above, it is possible to facilitate the movement of the flat single-plate thermistor from the first sealing member to the crystal vibrating element. By directly transferring heat, heat exchange between the crystal vibration device and the flat single-plate thermistor can be realized that is sensitive to changes in external ambient temperature. Therefore, the temperature of the crystal vibration device can be detected more accurately.

The conductive resin binder adopts a structure in which conductive fillers composed of metal powder, metal flakes, etc. are added to the resin binder. Since these conductive resin binders join the two electrode pad surfaces, the metal material can be used. Good thermal conductivity allows the temperature sensor to detect temperature changes of the crystal vibration device with less delay.

In addition, in addition to the above structure, it is also possible that the flat single-plate thermistor is covered with a resin material. For example, a resin material covering the entire outer surface of the flat single-plate thermistor may be formed. In this structure, since the heat conducted to the temperature sensor is not dissipated in vain, the temperature in the crystal oscillation device can be accurately detected.

Here, the temperature information (such as current value, voltage value, resistance value, etc.) detected by the flat single-board thermistor as a temperature sensor is connected to the outside through independent terminals. Then, by using an external compensation circuit to perform appropriate temperature compensation on the frequency information of the crystal oscillation device, the correct frequency can be obtained.

A plurality of electrode pads are formed on the joint surface between the flat single-plate thermistor and the first sealing member, and the total area of each electrode pad can be 40% to 85% of the top view area of the flat single-plate thermistor. Here, the top view area refers to the projected area, and the area ratio refers to the ratio of the sum of the projected areas of each electrode pad to the projected area of the flat single-plate thermistor.

The larger the contact area between the flat single-plate thermistor and the crystal vibration device, the more accurately the temperature of the crystal vibration device can be detected. Therefore, the larger the plan view area of the electrode pad formed on the flat single-plate thermistor relative to the flat single-plate thermistor, the better. However, if it is too large, it will easily lead to short circuits of adjacent electrode pads or due to conductive resin adhesive. short circuit. If the contact area becomes smaller, the temperature detection accuracy of the crystal oscillation device decreases. Therefore, by setting the total area of each electrode pad to 40% to 85% of the area of the flat single-plate thermistor, stable temperature detection can be achieved.

The flat single-board thermistor as a temperature sensor is made of a plate-shaped flat single-board thermistor (NTC flat single-board thermistor), and is mounted on one main surface of the flat single-board thermistor. A pair of electrode pads is formed, and a common electrode pad is formed on almost the entire surface of the other main surface facing away from the pair of electrode pads. The pair of electrode pads can be used with the first sealing member. The electrode pads are conductively bonded. In this structure, the common electrode pad formed on almost the entire other main surface of the flat single-plate thermistor can overlap with the vibrating portion of the crystal vibrating piece, thereby functioning as a barrier to block unnecessary noise from reaching the The function of the vibrating part.

The flat single-plate thermistor adopts a structure made by thick film forming technology such as screen printing technology or doctor blade technology and sintering technology. Mn (manganese)-Fe (iron)-Ni (nickel) based materials are sintered and molded into a plate-shaped thermal resistor. Sensitive resistor wafer. This plate-shaped thermistor wafer is sputtered to form an electrode film (metal film), and is patterned using photolithography technology. Finally, the plate thermistor wafer is cut into individual pieces to obtain a single flat single-plate thermistor. In addition, the material of the thermistor may be Mn (manganese)-Fe (iron) based materials, etc.

General-purpose thermistors (NTC thermistors) have a structure in which multiple layers are laminated on the thermistor material via electrode (metal) films using lamination technology. However, in the above structure, a single layer is used on the front of a flat single-plate thermistor. and a structure in which an electrode (metal) film is formed on the reverse side. By forming a pair of electrode pads on one main surface of the flat single-plate thermistor, a common electrode pad is formed on almost the entire surface of the other main surface facing away from the pair of electrode pads. structure, an extremely thin flat single-board thermistor can be obtained. These electrode films are formed by PVD film formation technology such as sputtering.

In addition, the crystal vibrating piece may be an AT-cut or SC-cut crystal vibrating piece, or an X-Y-cut crystal vibrating piece, etc.

[Effects of the invention] Based on the present invention, it is possible to obtain a crystal oscillation device with a temperature sensor that can cope with ultra-miniaturization and ultra-thinness, can well detect temperature changes of the crystal oscillation device, and has excellent electrical characteristics.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

The crystal vibration device with a temperature sensor in the embodiment of the present invention is composed of a crystal vibration device Xt1 and a temperature sensor. As shown in FIG. 1 , the crystal vibration device and the second sealing member 3, and adopts a structure in which the first sealing member 2, the crystal vibrating piece 1, and the second sealing member 3 are stacked in this order. In addition, the temperature sensor 4 is conductively bonded to the upper surface of the crystal vibration device Xt1.

The crystal vibrating piece 1 is composed of an AT-cut crystal vibrating piece and is in the shape of a rectangular plate as a whole. The crystal vibrating piece 1 is composed of a vibrating part 11; a holding part 13 and a holding part 13t respectively connected to two corners of the vibrating part 11; The frame part 12 is constituted. In addition, in addition to the holding portion 13 and the holding portion 13t, a through portion 14 is formed in an annular shape between the vibrating portion 11 and the frame portion 12.

The vibrating part 11 is rectangular and has a pair of opposing long sides, a pair of opposing short sides, and four corners. However, the vibrating part 11 may be viewed in a square shape from a plan view. In addition, rectangular excitation electrodes 111 and 112 are respectively formed on one main surface and the other main surface (front and back surfaces) of the vibrating portion 11 in a substantially middle portion. Strip-shaped extraction electrodes 111a and 112a are connected to respective corners of the excitation electrodes 111 and 112 . The extraction electrode 111a and the extraction electrode 112a are each extracted toward both ends of one side (the corner of the vibrating part). In addition, the extraction electrode 111a and the extraction electrode 112a are respectively extracted to the frame part 12 via the holding part 13 and the holding part 13t, and are finally extracted to the terminal electrodes 31 and 32 formed on the second sealing member 3 described later.

Specifically, the extraction electrode 111a passes through the surface of the holding part 13 and is extracted to the other main surface through the metal hole (metal penetration) V1 formed in the frame part 12, and further communicates with a second sealing member to be described later. The metal hole V2 formed on 3 is connected. Furthermore, the metal hole V2 is electrically connected to the terminal electrode 31 formed on the other main surface of the second sealing member 3 . In addition, the extraction electrode 112a passes through the back surface of the holding portion 13t, is extracted to the other surface of the crystal vibrating piece 1, and is electrically connected to the metal hole V3 formed in the opposing second sealing member 3. In addition, the metal hole V3 is electrically connected to the terminal electrode 32 formed on the other main surface of the second sealing member 3 .

These excitation electrodes 111, 112, extraction electrodes 111a, and extraction electrodes 112a are composed of multilayer metal films. For example, a Ti (titanium) film is formed in contact with the crystal vibrating piece 1, and an Au (gold) film is formed on the upper part. multi-layer structure. Specific examples of the thickness of each metal film include 5 nm for the Ti film and 200 nm for the Au film, but they may be changed depending on the desired characteristics.

A thick-walled portion 11 a is formed on one side of the vibrating portion 11 . The thick portion 11a is configured to extend along the Z′-axis direction on one side in the X-axis direction and to extend over the entire side of the side. The thick portion 11 a is configured to be thicker than the thickness of the vibrating portion 11 .

As shown in FIG. 2 , a holding part 13 is provided at one corner C1 of the vibrating part 11 and a holding part 13t is provided at the other corner C2. The holding part 13 and the holding part 13t are connected to the frame part 12 . In this embodiment, photolithography technology and wet etching technology are used to integrate the vibration part 11, the holding part 13, the holding part 13t, and the frame part 12 with a crystal piece. In addition, dry etching technology may be used instead of wet etching.

As shown in FIGS. 1 and 4 , the holding portion 13 is configured to be thicker than the vibrating portion 11 and the thick portion 11 a , and an inclined slope T2 is formed from the thick portion 11 a to the upper surface of the holding portion 13 . Inclined slopes T3 are also formed from the vibrating portion 11 to the holding portion 13 . In addition, the holding part 13 is connected to the frame part 12, and a slope T1 is formed from the holding part 13 to the upper surface of the frame part 12. Based on such a structure, the thickness of each part is set to the following: vibrating part 11<thick part 11a<holding part 13<frame part 12. In addition, the thickness of the thick wall portion 11 a may be equal to the thickness of the holding portion 13 . By forming these slopes, the interface area can be blunted. In addition, when the level difference in the boundary area is small and the risk of line breakage is low, there is no practical problem even if the slope is not formed.

Specific dimensions of the crystal vibrating piece 1 are as follows. The crystal vibrating piece 1 is a rectangular AT-cut crystal piece, and its outer dimensions are: 1.2mm in width and 1.0mm in length; the outer dimensions of vibrating part 11 are: 0.7mm in width and 0.7mm in length; the width of frame part 12 The dimensions are: 0.2 mm in width and 0.1 mm in length; the dimensions of the holding portion 13 are: 0.05 mm in width and 0.15 mm in length. Regarding the thickness of each component part, the thickness of the frame part 12 is 0.04 mm, the thickness of the holding part 13 is 0.03 mm, the thickness of the thick wall part 11 a is 0.017 mm (17 μm), and the thickness of the vibration part 11 is 0.005 mm (5 μm). In addition, it is preferable that the thickness of the thick-walled portion 11a is 10 several μm or more relative to the thickness of the vibrating portion 11, which is beneficial to ensuring mechanical strength.

In addition, in this embodiment, a structure is adopted in which thinning is achieved only from one main surface side of the crystal resonator piece 1. For example, thinning is performed using etching technology to achieve a desired frequency (thickness) from only one main surface side. Wall processing. In this case, since the other main surface side is not etched, it is possible to prevent deterioration in vibration characteristics due to surface roughening due to etching. However, it is also possible to adopt a structure in which thin-wall processing is performed from both main surfaces.

Sealing films S11 and S21 are annularly formed on the outer peripheral ends of the front and back surfaces of the frame portion 12. These sealing films, like the aforementioned electrode films, are Ti films, And a multilayer structure of Au film is formed on its upper part.

In addition, connection electrodes 121 and 122 are formed on the inner peripheral side of the frame portion 12 at a position away from the holding portions 13 and 13t. The connection electrodes 121 and 122 are each composed of a strip-shaped metal film extending from the upper surface of the frame portion 12 through the inner surface to the lower surface of the frame portion 12 . The upper portions of these connection electrodes 121 and 122 are respectively connected to the terminal electrodes 31 and 32 of the first sealing member 2 via metal holes to be described later. The terminal electrodes 31 and 32 are connected to the temperature sensor 4 to be described later. The electrode pads 41 and 42 are electrically connected. In addition, the lower portions of the connection electrodes 121 and 122 are also electrically connected to the terminal electrodes 33 and 34 of the second sealing member 3 via metal holes V4 and metal holes V5 respectively described below.

The first sealing member 2 is composed of a rectangular plate-shaped AT-cut crystal piece, and its outer shape and size are the same as those of the crystal vibrating piece 1 . An annular sealing film S12 corresponding to the sealing film S11 is formed on the other main surface of the first sealing member 2 (the surface facing the crystal vibrating piece 1 ).

In addition, on one main surface of the first sealing member 2, rectangular-shaped electrode pads 21 and 22 having long sides and short sides are arranged in parallel. The electrode pads 21 are led out through metal holes. The other main surface; the electrode pad 22 is led out to the other main surface through the metal hole. The electrode pads 21 and 22 are formed at the center of the short side of the first sealing member 2 and at both ends of the first sealing member 2 in the long side direction (the Z'-axis direction of the AT-cut crystal piece). Alternatively, the electrode pads 21 and 22 may be formed at both ends of the short side (in the X-axis direction of the AT-cut quartz crystal piece) due to the wiring structure of the quartz crystal vibrating piece 1 .

The second sealing member 3 is composed of a rectangular plate-shaped AT-cut crystal piece, and its outer shape and outer dimensions are the same as those of the crystal vibrating piece 1 . An annular sealing film S22 corresponding to the sealing film S21 is formed on the surface of the second sealing member 3 facing the crystal vibrating piece 1 .

In addition, terminal electrodes 31 , terminal electrodes 32 , terminal electrodes 33 and terminal electrodes 34 are formed on the surface of the second sealing member 3 that does not face the crystal vibrating piece 1 . The terminal electrodes 31, 32, 33, and 34 have a rectangular shape and are formed at respective corners of the second sealing member. The terminal electrodes 31 and 32 are electrically connected to the excitation electrodes 111 and 112 respectively; the terminal electrodes 33 and 34 are respectively electrically connected to the electrode pads 41 and 42 of the temperature sensor 4 described below. In addition, the metal film constituting these terminal electrodes adopts a laminated structure of a Ti film, a NiTi film, and an Au film.

In addition, in the second sealing member 3, a metal hole V2 penetrating the front and back surfaces is formed near the area corresponding to the holding portion 13, and is electrically connected to the aforementioned metal hole V1. In addition, a metal hole V3 penetrating the front and back surfaces is formed near the area corresponding to the holding portion 13t. Based on such a structure, the extraction electrode 111a formed on the crystal vibrating piece 1 is connected to the terminal electrode 31 via the metal hole V2, and the extraction electrode 112a is connected to the terminal electrode 32 via the metal hole V3. Furthermore, metal holes V4 and V5 respectively corresponding to the connection electrodes 121 and 122 are also formed. The metal holes V4 and V5 are electrically connected to the terminal electrodes 33 and 34 respectively. Based on such a structure, the terminal electrodes 31 and 32 of the crystal oscillation device Xt1 and the terminal electrodes 33 and 34 of the temperature sensor are arranged on the long side and face each other. In addition, due to a design change of the electrode wiring, the terminal electrode 31 and the terminal electrode 32 of the crystal oscillation device Xt1 and the terminal electrode 33 and the terminal electrode 34 of the temperature sensor may be arranged diagonally.

A temperature sensor 4 described below is mechanically and electrically connected to the electrode pads 21 and 22 of the first sealing member 2 . The temperature sensor 4 is a rectangular NTC flat single-plate thermistor (a flat single-layer thermistor plate), and the rectangular plate-shaped flat single-plate thermistor 40 has a thickness G2. A common electrode 43 is formed on the entire main surface of one side of the flat single plate thermistor 40; an electrode pad 41 and an electrode pad 42 are formed on the other main surface, and the electrode pad 41 and the electrode pad 42 are on the main surface. The faces are separated by a certain distance G1 in the long side direction. The electrode pads 41 and 42 are formed at the center including the short sides of the flat single-plate thermistor 40 and are located at both ends of the flat single-plate thermistor 40 in the longitudinal direction. Alternatively, the electrode pads 41 and 42 may be formed at both ends of the short side due to the wiring structure of the flat single-plate thermistor 40 . In this structure, the common electrode 43 formed on the entire main surface of one of the flat single-plate thermistors 40 is arranged and attached to the vibrating portion 11 of the crystal vibrating piece 1, preferably to the vibrating portion 11. The overlapping position of the front excitation electrode 111 and the back excitation electrode 112 can serve as a barrier to prevent unnecessary noise and the like from reaching the vibrating part 11 .

The temperature sensor 4 has one electrode pad 41 formed on the flat single-plate thermistor 40 and the other electrode pad 42 forming a terminal as a resistor body, and a conductive path passes through the one electrode pad 41 The common electrode 43 reaches the other electrode pad 42 . Based on such a structure, the cross-sectional area of the conductive path is greatly increased, and a path is obtained in which the electrode pad 41, the electrode pad 42 and the common electrode 43 face each other. Therefore, the resistance value can be reduced with a smaller area, making the characteristics easier to stabilize and withstand. Pressure performance is improved.

However, when a structure is adopted in which the electrode pads 41 and 42 are close to each other, the conductive path may be dominated by the flow path from the electrode pad 41 to the electrode pad 42 depending on the applied voltage, and the desired resistance may not be obtained. value. Therefore, in the implementation, the distance G2a between the electrode pad 41 and the common electrode 43, the distance G2b between the electrode pad 42 and the common electrode 43, and the distance G1 between the electrode pad 41 and the electrode pad 42 are set to satisfy G2a+G2b<G1. Based on such settings, a desired resistance value can be obtained, and the accuracy of the temperature sensor 4 can be stabilized.

The larger the contact area between the temperature sensor 4 and the crystal vibration device Xt1, the more accurately the temperature of the crystal vibration device Xt1 can be measured. Therefore, the larger the area of the electrode pads 41 and 42 formed on the temperature sensor 4 relative to the temperature sensor 4 is, the better, but if it is too large, it will easily cause the adjacent electrode pads 41 and 42 to short-circuit. Or a short circuit caused by conductive resin adhesive. If the contact area becomes smaller, the temperature detection accuracy of the crystal oscillation device Xt1 will decrease. Therefore, depending on the desired resistance value, stable temperature detection can be achieved by setting the total area of the electrode pad 41 and the electrode pad 42 to be 40% to 85% of the area of the temperature sensor 4 . If the size is 40% or less, the electrode pads 41 and 42 of the temperature sensor 4 are too small, so that the temperature information of the crystal oscillation device In the case of a sensitive resistor, if its resistance value is too high, the temperature detection capability of the temperature sensor 4 may be reduced. In addition, if the size is 85% or more, the risk of short circuit including the conductive resin adhesive increases, and if a short circuit occurs, the function of the temperature sensor 4 will be disabled.

Specific dimensions are shown below. The external dimensions of the temperature sensor 4 (the external dimensions of the thermistor) are: the long side is 1.2 mm, the short side is 0.6 mm, the thickness is 0.05 mm, and its area is 0.72 mm ² . In addition, the outer dimensions of the electrode pads 41 and 42 formed on the flat single-plate thermistor 40 are: the long side is 0.6 mm (the short side of the flat single-plate thermistor 40), and the short side is 0.4 mm ( The long side of the flat single-plate thermistor 40) has an area of 0.24mm ² . Based on such a structure, the total area of the electrode pad 41 and the electrode pad 42 is set to approximately 66% of the area of the temperature sensor 4, and the distance G2a between the electrode pad 41 and the common electrode 43, the The distance G2b between the pad 42 and the common electrode 43 is respectively set to 0.05 mm, and the distance G1 between the electrode pad 41 and the electrode pad 42 is set to 0.4 mm, so that G2a + G2b < G1 is established.

Other specific examples are shown below. The external dimensions of the temperature sensor 4 (the external dimensions of the thermistor) are: the long side is 0.8 mm, the short side is 0.6 mm, the thickness is 0.05 mm, and its area is 0.48 mm ² . In addition, the outer dimensions of the electrode pads 41 and 42 formed on the flat single-plate thermistor 40 are: the long side is 0.52 mm (the short side of the flat single-plate thermistor 40), and the short side is 0.3 mm ( The long side of the flat single-plate thermistor 40) has an area of 0.156mm ² . Based on such a structure, the total area of the electrode pad 41 and the electrode pad 42 is set to about 65% of the area of the temperature sensor 4, and the distance G2a between the electrode pad 41 and the common electrode, the distance G2a between the electrode pad 41 and the common electrode, The distance G2b between 42 and the common electrode 43 is respectively set to 0.05 mm, and the distance G1 between the electrode pad 41 and the electrode pad 42 is set to 0.12 mm, so that G2a + G2b < G1 is established.

Another other specific example is shown below. The external dimensions of the temperature sensor 4 (the external dimensions of the thermistor) are: the long side is 0.7 mm, the short side is 0.6 mm, the thickness is 0.04 mm, and its area is 0.42 mm ² . In addition, the outer dimensions of the electrode pads 41 and 42 formed on the flat single-plate thermistor 40 are: the long side is 0.58 mm (the short side of the flat single-plate thermistor 40), and the short side is 0.3 mm ( The long side of the flat single-plate thermistor 40) has an area of 0.174mm ² . Based on such a structure, the total area of the electrode pad 41 and the electrode pad 42 is set to about 83% of the area of the temperature sensor 4, and the distance G2a between the electrode pad 41 and the common electrode, the distance G2a between the electrode pad 41 and the common electrode, The distance G2b between 42 and the common electrode 43 is respectively set to 0.04mm, and the distance G1 between the electrode pad 41 and the electrode pad 42 is set to 0.09mm, so that G2a+G2b<G1 is established. In addition, the above-mentioned dimensions can be appropriately designed according to the size and characteristics of the crystal oscillation device and the required specifications of the crystal oscillation device with a temperature sensor.

The flat single-plate thermistor 40 is made, for example, by making a Mn-Fe-Ni material and an adhesive into a slurry, and then using a thick film forming technology such as screen printing technology or doctor blade technology to form a plate-shaped thermistor crystal. The round green embryo is then sintered into a plate-shaped thermistor wafer using sintering technology. In addition, the material is not limited to the Mn-Fe-Ni type material, and Mn (manganese)-Co (cobalt) type material or Fe-Ni type material can also be used.

This plate-shaped thermistor wafer is sputtered to form an electrode film (metal film), and is patterned using photolithography technology. As a specific metal material, like the metal film constituting the terminal electrode, a stacked structure of a Ti film, a NiTi film, and an Au film can be used, or other metal film structures can be used. When the laminated structure of the Ti film, NiTi film, and Au film is used, when the thermistor is finally welded to the mounting substrate, a stable conductive joint that is less prone to soldering corrosion can be achieved. In addition, the metal film structure of the electrode pads 41 and 42 can also be different from the metal film structure of the common electrode 43. For example, the Ti film, NiTi film, and a stacked structure of Au films, and the metal film structure of the common electrode 43 adopts a stacked structure of a Ti film and an Au film.

By forming a metal film on the single-layer flat single-plate thermistor 40 in this way using thin film formation techniques such as sputtering, an extremely thin-walled flat single-plate thermistor 40 can be obtained. In addition, the surface roughness of the flat single-plate thermistor 40 can also be reduced by grinding and polishing the surface when the flat single-plate thermistor 40 is in a plate-shaped thermistor wafer state. Based on such a structure, the electrode film (metal film) can be formed stably and the manufacturing accuracy can be improved. Therefore, the performance of the temperature sensor 4 can be achieved with high accuracy.

As shown in FIG. 4 , the crystal vibration device Xt1 has a structure in which the first sealing member 2 , the crystal vibration piece 1 , and the second sealing member 3 are stacked in this order. As mentioned above, each of these components is composed of a crystal piece, and its surface is mirror-polished into a smooth surface. As a specific example, the average surface roughness Ra is preferably 0.3 to 0.1 nm. By forming the sealing film S11, the sealing film S12, the sealing film S21, and the sealing film S22 on such a smooth surface, the surface of the metal film (the uppermost Au film) on the surface is also in a very smooth state.

The bonding between the first sealing member 2 made of crystal, which is a brittle substance, and the crystal vibrating piece 1, and the bonding between the crystal vibrating piece 1 and the second sealing member 3 made of crystal, which is a brittle substance, are achieved by Au on the metal film. After surface treatment, the two are pressure-bonded (gold-gold diffusion bonding) using the diffusion bonding method. Thereby, the vibrating part 11 of the crystal vibrating piece 1 passes through the sealing part S1 (sealing film S11, sealing film S12), the sealing part S2 (sealing film S21, sealing film S22), and passes through the sealed member 2, the sealing member 3, and the frame. It is airtightly sealed in a state surrounded by part 12. At this time, in a state where the vibrating portion 11 of the crystal vibrating piece 1 is not in contact with the first sealing member 2 and the second sealing member 3, the frame portion 12 of the crystal vibrating piece 1 is in contact with the first sealing member 2 and the second sealing member 3. 3 mechanical joint. In addition, the interior of the airtight seal is a vacuum or inert gas environment.

According to this embodiment, the vibrating portion 11 of the crystal vibrating piece 1 is connected by the holding portion 13 and the holding portion 13t extending at only two locations, and is in a state of not contacting the first sealing member 2 and the second sealing member 3. At the same time, Since the frame portion 12 of the quartz-crystal vibrating piece 1 is mechanically connected to the first sealing member 2 and the second sealing member 3, the vibrating portion 11 of the quartz-crystal vibrating piece 1 is not easily affected by external stress. In particular, the influence of external stress caused by the conductive resin adhesive R1 or the resin adhesive R2 generated when the flat single-plate thermistor 40 is joined is not easily transmitted to the vibrating part, so that the characteristics of the vibrating part 11 are stable.

The temperature sensor 4 is mounted on the upper surface of the crystal oscillation device Xt1 having the above-described structure, that is, on one main surface of the first sealing member 2 . The electrode pads 21 and 22 formed on the upper surface of the crystal vibration device And face joining. At this time, the conductive resin adhesive R1 is surface-bonded to a portion that overlaps the frame portion 12 of the crystal resonator element 1 in a plan view.

The electrode pads 21 and 22 are configured to have an area larger than that of the electrode pads 41 and 42. Therefore, the conductive resin adhesive R1 can connect the crystal vibration device Xt1 and the temperature sensor in a rounded state. The device 4 is electrically connected to each other, so that the joint strength between the two can be improved. The conductive resin adhesive R1 has, for example, a structure in which conductive fillers such as silver powder or silver flakes are added to a paste-like silicone resin adhesive material, so that it has excellent thermal conductivity.

In addition, in the area including the center of gravity O of the first sealing member 2, the temperature sensor 4 overlaps with the vibrating portion 11 of the crystal vibrating piece 1 in a plan view to bond the conductive resin adhesive R1 to the conductive resin. The first sealing member 2 and the temperature sensor 4 are surface-joined through the resin adhesive R2 while the empty area existing between the agents R1 is filled. The resin adhesive R2 is composed of, for example, a paste-like epoxy resin adhesive material. Therefore, the thermal conductivity is lower than that of the conductive resin adhesive R1 and the pencil hardness is lower than that of the conductive resin adhesive R1.

In addition, a soft (low pencil hardness) conductive resin adhesive R1 may be disposed at both end portions in the axial direction of the crystal axis of the crystal where the thermal expansion coefficient becomes large. In the case of AT-cut crystal pieces, the planes are the X-axis and the Z'-axis, but since the thermal expansion coefficient becomes smaller in the Z'-axis direction, it can also be along the Z'-axis direction (both ends in the Z'-axis direction) Configured with softer conductive resin adhesive R1.

In addition, in this embodiment, compared with the first sealing member 2 made of crystal, the flat single-plate thermistor 40 made of Mn-Fe-Ni based material has a smaller thermal expansion coefficient, especially in the longitudinal direction. The resulting thermal expansion difference is large, so by arranging relatively soft conductive resin adhesive R1 at both ends in the longitudinal direction, a structure that can reduce the influence of thermal stress can be obtained.

In this embodiment, more than half of the plan view area of the temperature sensor 4 is surface-bonded to the surface of the first sealing member 2 through the conductive resin adhesive R1 and the resin adhesive R2. Specifically, about 66% of the top view area of the temperature sensor 4 is surface-bonded with the conductive resin adhesive R1, and about 30% of the top-view area of the temperature sensor 4 is surface-bonded with the resin adhesive R2. Overall, , approximately 96% of the top view area of the temperature sensor 4 is surface-bonded.

In this embodiment, the electromechanical bonding and the mechanical bonding between the crystal oscillation device By absorbing stress and impact on the flat single-plate thermistor 40 that is easily weakened due to thinning, it is possible to avoid cracks or chips in the flat single-plate thermistor 40 .

In addition, since the top view area of the conductive resin adhesive R1 is larger than the top view area of the resin adhesive R2, in addition to good heat conduction between the electrode pads, the temperature sensor 4 can vibrate the crystal vibration device with a small delay. Xtl temperature detection with high precision. In addition, it is sufficient that the total plane-view area formed by the two types of resin adhesives is at least 50% or more. By adopting such a structure, heat exchange can be fully carried out between the crystal oscillation device The difference between the ambient temperatures sensed by the thermistor 40 enables good temperature detection.

In addition, in the area including the center of gravity of the first sealing member 2 , the flat single-plate thermistor 40 is surface-bonded by the resin adhesive R2 at the portion overlapping the vibrating portion 11 of the crystal vibrating piece 1 in plan view. Therefore, not only is the bonding The influence of external stress caused by the resin adhesive R2 generated when the flat single-plate thermistor 40 is not easily transmitted to the vibrating part 11, and the external stress can be prevented from being strongly applied to the flat single-plate thermistor 40 itself. In addition, heat exchange between the crystal oscillation device It is not easy to produce a temperature difference with respect to each other's ambient temperature.

In addition, since the portion of the flat single-plate thermistor 40 that overlaps with the frame portion 12 of the crystal resonator element 1 in a plan view is surface-bonded by the conductive resin adhesive R1 with high thermal conductivity, it is directly connected from the first sealing member 2 to The heat transfer by the crystal vibrating piece 1 is promoted, so that sensitive heat exchange between the crystal vibrating device Xt1 and the flat single-plate thermistor 40 can be smoothly performed in response to changes in the external ambient temperature. Therefore, the temperature of the crystal vibration device Xt1 can be detected more accurately.

In addition, the conductive resin adhesive R1 and the resin adhesive R2 are not limited to the exemplified resin materials, and may also adopt an optimal combination structure composed of silicone resin, polyurethane resin, epoxy resin, etc.

In this embodiment, a three-layer crystal oscillation device Xt1 in which the plate-shaped crystal oscillation piece 1, the first sealing member 2, and the second sealing member 3 are joined together is used, so that a thin crystal oscillation device structure can be obtained. In addition, since the flat single-plate thermistor 40 is used as the temperature sensor 4 and joined together, not only stable electrical characteristics can be obtained, but also compared with the case of using a general-purpose multilayer thermistor, it is possible to obtain A crystal oscillation device with a temperature sensor that is suitable for thinning and miniaturization.

In addition, an electrode pad with high thermal conductivity is formed at the end of the first sealing member 2 and the flat single-plate thermistor 40, and they are joined by a conductive resin adhesive R1 that has a greater thermal conductivity than the resin adhesive R2. Therefore, heat exchange between the crystal vibration device Xt1 and the flat single-plate thermistor 40 can be performed while sensitively responding to changes in the external ambient temperature. Therefore, the temperature of the crystal vibration device Xt1 can be detected more accurately.

In addition, in the crystal oscillation device Xt1 with the above structure, the temperature information (such as current value, voltage value, resistance value, etc.) detected by the flat single-plate thermistor 40 as the temperature sensor 4 passes through the independent terminal electrode 33, The terminal electrode 34 is connected to the outside. Furthermore, an external compensation circuit or the like is used to perform appropriate temperature compensation on the frequency information in the crystal oscillation device Xtl, so that the correct frequency can be obtained.

According to this embodiment, a thick-walled portion 11a is formed along almost the entire area of one side of the vibrating portion 11 where the holding portion 13 and the holding portion 13t are formed, while the other side adopts a thin-walled vibration corresponding to high frequency. The thickness of the board. Therefore, the vibration excited in the vibrating part 11 can vibrate in a state that is not easily affected by the boundary conditions caused by the thick-walled part 11a, so that artifacts are less likely to occur, and the CI value (series resonance resistance) can also be maintained. Crystal vibrator piece 1 in good condition. In addition, the mechanical strength of the vibrating part 11 can also be improved by the thick wall part 11a. In addition, the vibration part 11 of this embodiment may have a structure in which the thick-walled part 11a is not formed. In this case, the areas of the excitation electrodes 111 and 112 of the vibration unit 11 can be made larger.

In addition, as mentioned above, the holding portion 13 is thicker than the thick portion 11 a or has the same thickness as the thick portion 11 a, and is formed between the frame portion 12 and the holding portion 13 and between the thick portion 11 a and the vibrating portion 11 Has a beveled surface. As mentioned above, the formation of the bevel can blunt the intersection. Accordingly, the lead electrode 111 a led out from the excitation electrode 111 to one side of the crystal vibrating piece 1 can be formed on the slope portion, thereby forming a structure that does not pass through the acute-angled corner area (step difference portion), and can prevent The conductive performance of the electrode is reduced and the electrode is disconnected. As a result, the crystal vibrating piece 1 with good electrical characteristics can be obtained.

According to this embodiment, although a structure is adopted in which the frame part 12 and the vibrating part 11 are connected by the holding part 13 and the holding part 13t, the thickness of the holding part 13t is smaller than the thickness of the holding part 13. Therefore, by holding with a plurality of holding parts, the mechanical strength can be stabilized, and at the same time, by providing a small (thin) holding part 13t, it is possible to prevent the vibration of the vibrating part 11 from being hindered. Thereby, it is possible to suppress a decrease in the electrical characteristics of the crystal oscillation device Xtl and ensure practical electrical performance. In addition, the structure is not limited to this embodiment, and a structure in which only one part of the holding part 13 is connected to the vibrating part 11 may be adopted.

In addition, the crystal resonator piece 1 may be configured as a thin-walled portion instead of the through portion 14 . In this case, the vibration part 11 is connected to the frame part 12 through the holding part and the thin part.

In addition, in this embodiment, the multilayer structure of Ti and Au is exemplified as the metal film of the excitation electrode and the metal film for sealing, but the structure is not limited to this metal film. For example, a multilayer structure of Ti, NiTi, and Au may be used.

In addition, the diffusion bonding method is used for the bonding between the sealing members 2 and 3 and the crystal vibrating piece 1. However, brazing using AuSn alloy solder, for example, or other solder such as Sn alloy solder may also be used. In the case of brazing, the metal film structure is also different. For example, a structure in which an Ag or Cu film is formed on a Cr base layer or an alloy film with Au may be adopted.

In the above description, crystal flakes are used as the material of the first sealing member 2 and the second sealing member 3. However, a sealing body made of other brittle materials such as glass material or ceramic material may be used instead of the crystal flake. In addition, although the shape of the plate-like structure is exemplified, a recessed portion may be provided at a position facing the crystal vibrating piece 1 . When such a recessed portion is provided, the chance of contact between the vibrating portion 11 and the sealing member can be reduced, and therefore the characteristics of the crystal oscillating device Xt1 can be stabilized.

In addition, the temperature sensor 4 has a structure in which a common electrode 43 is formed on the entire main surface of one side, and an electrode pad 41 and an electrode pad 42 are formed on the other main surface at a distance G1 in the longitudinal direction. , but it is also possible to adopt a structure in which only the separation electrode is formed on the other main surface. In addition, it is not limited to NTC thermistor and can also be replaced with PTC thermistor.

Other embodiment 1 will be described with reference to FIG. 7 . In FIG. 7 , illustration of the detailed structure of the crystal vibration device Xt1 is omitted. A temperature sensor 4 is mounted on the upper surface of the crystal oscillation device Xt1, but the structure of the temperature sensor 4 is different from the above-mentioned embodiment.

Specifically, the temperature sensor 4 has a structure in which electrode pads 44 and 45 are formed on the other main surface of the flat single-plate thermistor 40. Although the inter-electrode gap G3 is formed, An electrode film is not formed on one main surface of the thermistor 40 . Therefore, a conductive path is formed between the electrode pad 44 and the electrode pad 45, and it can function as a thermistor.

By bonding the electrode pads 44 and 45 to the electrode pads 23 and 24 respectively on the upper surface of the first sealing member 2 with the conductive resin adhesive R1, the two electrode pads are electrically bonded. , the two can be joined with good thermal conductivity. In addition, in this embodiment, the resin adhesive R2 with excellent thermal conductivity is filled between the conductive bonding materials. Based on these structures, the entire other main surface of the temperature sensor 4 is in a state of being joined to the surface of the crystal oscillation device Xt1.

In this embodiment, the temperature sensor 4 consisting of the flat single-plate thermistor 40 is covered with the resin material R3. In a structure in which the upper surface of the crystal oscillation device Xtl is covered with the resin material R3, the temperature sensor 4, the electrode pads 23 and 24 provided in the crystal oscillation device Xtl, and the conductive resin adhesives R1 and R2 are covered. . The resin material R3 used here has a structure in which silicon dioxide (SiO ₂ ) filler is added to an epoxy resin, and has a thermal conductivity lower than that of the conductive resin binder R1. In addition, in addition to epoxy resin, the resin material R3 may also be other resin materials such as polyurethane resin and silicone resin. With such a structure, it is possible to obtain the effect of preventing the heat detected by the temperature sensor 4 from escaping to the outside.

Based on the structure of this embodiment, the temperature change of the crystal oscillation device The conductive resin adhesive R1 formed at the end is covered with the resin material R3 having a lower thermal conductivity, so the heat absorbed by the temperature sensor 4 does not leak to the outside. Thereby, the temperature during operation of the crystal oscillation device Xt1 can be accurately detected, and high-precision temperature detection can be performed. In addition, in addition to the temperature sensor 4 mounted on the upper surface of the crystal oscillation device Xtl, an IC component including an oscillation circuit and a temperature compensation circuit may be mounted and electrically connected to the crystal oscillation device Xtl and the temperature sensor 4. Based on such a structure, it is possible to obtain the crystal oscillation device Xtl constituting a temperature-compensated crystal oscillator.

Other embodiment 2 will be described with reference to FIG. 8 . In FIG. 8 , illustration of the detailed structure of the crystal oscillation device Xt1 is omitted. A structure is adopted in which a temperature sensor 4 is mounted on the upper surface of the crystal oscillation device Other implementations are different.

On the upper surface of the first sealing member 2, electrode pads 23 and 24 are formed. The electrode pad 23 and the electrode pad 24 are different from the other first embodiment (see FIG. 7 ) described above in that they are formed to be offset to the left side of the drawing. As a result, a region where no electrode pad is formed can be secured on the upper surface of the first sealing member 2 . This area can be used as adjustment area 25. When the first sealing member 2 is made of a translucent material, the adjustment region 25 can transmit the energy beam B such as a laser beam. Therefore, the frequency of the crystal oscillation device Xt1 can be adjusted by irradiating the metal films formed on the crystal oscillation piece 1 with the energy beam B and removing part of these metal films.

Alternatively, an adjustment metal film may be formed on the inside of the first sealing member 2 in advance, and the adjustment metal film may be irradiated with the energy beam B to vaporize the adjustment metal film and adhere to the metal film formed on the crystal vibrating piece 1 On, the frequency of the crystal oscillation device Xtl can be adjusted.

Furthermore, the resin material R3 is formed to cover the entire upper surface (one main surface) of the first sealing member 2 . As a result, the entire temperature sensor 4 is also covered with the resin material R3. In addition, the resin material R3 may be formed only in the temperature sensor 4 mounting area. In this case, since the adjustment area 25 is not covered by the resin material R3, there is an advantage that the energy beam B can be used for frequency adjustment after the temperature sensor 4 is joined.

Based on this embodiment, almost the entire other main surface of the temperature sensor 4 is bonded to the crystal vibration device Xt1 through the conductive resin adhesive R1 and the resin adhesive R2, so the temperature sensor 4 can reliably and accurately detect to the temperature change of the crystal vibration device Xtl. In addition, by covering it with the resin material R3, heat diffusion can be suppressed. Based on these structures, it is possible to obtain a crystal vibration device with a temperature sensor that can perform high-precision temperature detection. Furthermore, using the adjustment area 25, the frequency of the crystal oscillation device Xt1 can be adjusted after hermetic sealing or after the temperature sensor 4 is installed, so that the electrical characteristics can be improved.

The embodiments disclosed this time are examples of various aspects and do not constitute a basis for restrictive interpretation. Therefore, the technical scope of the present invention cannot be interpreted solely based on the above-described embodiments, but must be defined based on the description of the claims. In addition, all changes within the meaning and scope of the requested items are included.

This application claims priority based on Japanese Patent Application No. 2021-174379 filed in Japan on October 26, 2021. It goes without saying that all its contents are incorporated into this application.

Xtl: crystal vibration device 1: Crystal vibrator 11:Vibration Department 11a: thick wall part 111, 112: Excitation electrode 111a, 112a: Lead electrode 12: Frame part 13, 13t: Holding part 14: Penetrating Department 2: First sealing component 21, 41, 42: Electrode pads 3: Second sealing member 31, 32: Terminal electrode 4:Temperature sensor 40: Flat single board thermistor 43: Common electrode G1, G2a, G2b: distance G2:Thickness S11, S12, S21, S22: sealing film S1, S2: sealing part T1, T2, T3: inclined plane V1, V2, V3, V4, V5: metal holes R1: Conductive resin adhesive R2: Resin binder R3: Resin material

The details of one or more embodiments of the subject matter described in this specification are set forth in the accompanying drawings and the description below. Other features, aspects and advantages of the subject matter of this specification will become apparent from the description, drawings and claims, among which: FIG. 1 is an exploded perspective view showing each component of the crystal oscillation device with a temperature sensor according to this embodiment. FIG. 2 is a plan view of one main surface of the crystal vibrating piece. FIG. 3 is a plan view of the other main surface (bottom surface) of the second sealing member. FIG. 4 is a schematic cross-sectional view of each component in FIG. 1 assembled. FIG. 5 is a top view of one main surface of the flat single-plate thermistor. FIG. 6 is a plan view of the other main surface of the flat single-plate thermistor. 7 is a schematic cross-sectional view of another crystal oscillation device with a temperature sensor according to Embodiment 1. 8 is a schematic cross-sectional view of another crystal oscillation device with a temperature sensor according to Embodiment 2.

Xtl: crystal vibration device

1: Crystal vibrator

11:Vibration Department

11a: thick wall part

13, 13t: Holding part

2: First sealing component

21, 41, 42: Electrode pads

3: Second sealing member

31, 32: Terminal electrode

4:Temperature sensor

43: Common electrode

G1, G2a, G2b: distance

G2:Thickness

S1, S2: sealing part

T1, T2: inclined plane

R1: Conductive resin adhesive

R2: Resin binder

Claims (3)

A crystal vibration device with a temperature sensor, including a crystal vibration piece, a first sealing member joined to the upper surface of the crystal vibration piece, and a second sealing member joined to the lower surface of the crystal vibration piece A crystal vibration device; and a flat single-plate thermistor as a temperature sensor, wherein: A plurality of electrode pads are formed on the first sealing member and the flat single-plate thermistor. The electrode pads of the first sealing member and the electrode pads of the flat single-plate thermistor are connected through a conductive resin adhesive. And face joining; Furthermore, the first sealing member and the flat single-plate thermistor are surface-joined through a resin adhesive, and more than half of the joint surface between the flat single-plate thermistor and the first sealing member is passed through the The conductive resin adhesive and the resin adhesive are surface-joined; The thermal conductivity of the conductive resin adhesive is greater than the thermal conductivity of the resin adhesive. The crystal vibration device with temperature sensor as described in claim 1, wherein: The crystal vibrating piece is composed of a vibrating portion formed with a pair of excitation electrodes, a holding portion extending from at least one portion of the vibrating portion, a through portion surrounding the outer periphery of the vibrating portion, and a penetrating portion surrounding the through portion. The structure is composed of a frame part connected to the outer periphery and the holding part at the same time; The first sealing member and the second sealing member are plate-shaped structures; Furthermore, in a state where the vibrating portion of the crystal vibrating piece is not in contact with the first sealing member and the second sealing member, the frame portion of the crystal vibrating piece is in contact with the first sealing member and the second sealing member. mechanical joining; In a region including the center of gravity of the first sealing member, a portion of the flat single-plate thermistor that overlaps the vibrating portion of the crystal vibrating piece when viewed from above is surface-bonded with the resin adhesive, and is bonded to the The overlapping portions of the frame portions of the crystal vibrating piece when viewed from above are surface-bonded by the conductive resin adhesive. The crystal vibration device with a temperature sensor as claimed in claim 1 or 2, wherein the flat single-plate thermistor is covered with a resin material.