TWI837805B - A carrying device and equipment for cleaning silicon wafers and silicon wafers - Google Patents
A carrying device and equipment for cleaning silicon wafers and silicon wafers Download PDFInfo
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- 238000004140 cleaning Methods 0.000 title claims abstract description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 85
- 239000010703 silicon Substances 0.000 title claims abstract description 85
- 235000012431 wafers Nutrition 0.000 title claims abstract description 85
- 239000007788 liquid Substances 0.000 claims abstract description 38
- 238000010586 diagram Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 239000000356 contaminant Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OQSOTSIYXPYTRE-YDOWWZDFSA-N (+)-sesamin dicatechol Chemical compound C1=C(O)C(O)=CC=C1[C@@H]1[C@@H](CO[C@@H]2C=3C=C(O)C(O)=CC=3)[C@@H]2CO1 OQSOTSIYXPYTRE-YDOWWZDFSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本發明實施例公開了一種用於矽片清洗的承載裝置、設備及矽片;該承載裝置包括由多根支撐桿組成的用於承載矽片的承載架;每根支撐桿包括:用於插放矽片的多個插槽;在該插槽的相對側沿周向方向均勻分佈的多個凹槽,該凹槽內允許清洗液流動。The embodiment of the present invention discloses a supporting device, equipment and silicon wafer for cleaning silicon wafers; the supporting device includes a supporting frame composed of multiple supporting rods for supporting silicon wafers; each supporting rod includes: multiple slots for inserting silicon wafers; multiple grooves evenly distributed in the circumferential direction on the opposite sides of the slots, allowing cleaning liquid to flow in the grooves.
Description
本發明實施例屬於半導體技術領域,尤其關於一種用於矽片清洗的承載裝置、設備及矽片。The present invention relates to the field of semiconductor technology, and more particularly to a carrier, equipment and silicon wafer for cleaning silicon wafers.
通常,單晶矽棒經過切割、研磨、拋光,外延生長等一系列生產步驟後,生產得到半導體器件製造所用的矽片。在上述生產步驟過程中,由於矽片本身或外部環境等原因,易產生顆粒汙染物和金屬離子雜質等各種異物,這些顆粒汙染物和金屬離子雜質會使得矽片受到汙染,進而造成半導體器件生產良率降低,因此,為了徹底清除這些異物,需要利用清洗裝置對矽片進行清洗和漂洗。在矽片清洗過程中,矽片承載裝置是清洗裝置的主要工裝之一,承載裝置的結構直接影響著矽片的清洗品質,但是,相關技術中的矽片承載裝置由於結構設計不合理,導致清洗完成後矽片的表面仍然存在上述異物。Usually, after a series of production steps such as cutting, grinding, polishing, and epitaxial growth, single crystal silicon rods are produced to obtain silicon wafers used in the manufacture of semiconductor devices. During the above production steps, various foreign matters such as particulate contaminants and metal ion impurities are easily generated due to reasons such as the silicon wafer itself or the external environment. These particulate contaminants and metal ion impurities will contaminate the silicon wafer, thereby reducing the production yield of semiconductor devices. Therefore, in order to completely remove these foreign matters, it is necessary to use a cleaning device to clean and rinse the silicon wafer. During the silicon wafer cleaning process, the silicon wafer carrier is one of the main tools of the cleaning device. The structure of the carrier directly affects the cleaning quality of the silicon wafer. However, due to the unreasonable structural design of the silicon wafer carrier in the related technology, the above-mentioned foreign matter still exists on the surface of the silicon wafer after cleaning.
有鑑於此,本發明實施例期望提供一種用於矽片清洗的承載裝置、設備及矽片;能夠去除承載裝置中支撐桿上殘留的汙染物,並同時降低顆粒汙染物在承載裝置中的支撐桿上的累積速率,提高承載裝置的使用壽命,降低矽片清洗設備預防性維護(Preventive Maintenance,PM)頻率。In view of this, the embodiments of the present invention are intended to provide a carrier, equipment and silicon wafer for cleaning silicon wafers; the pollutants remaining on the supporting rods in the carrier can be removed, and at the same time, the accumulation rate of particulate pollutants on the supporting rods in the carrier can be reduced, thereby increasing the service life of the carrier and reducing the frequency of preventive maintenance (PM) of the silicon wafer cleaning equipment.
本發明實施例的技術方案是這樣實現的: 第一方面,本發明實施例提供了一種用於矽片清洗的承載裝置,該承載裝置包括由多根支撐桿組成的用於承載矽片的承載架;每根支撐桿包括: 用於插放矽片的多個插槽; 在該插槽的相對側沿周向方向均勻分佈的多個凹槽,該凹槽內允許清洗液流動。 The technical solution of the embodiment of the present invention is implemented as follows: In the first aspect, the embodiment of the present invention provides a carrier for cleaning silicon wafers, the carrier comprising a carrier frame for carrying silicon wafers composed of a plurality of supporting rods; each supporting rod comprises: a plurality of slots for inserting silicon wafers; a plurality of grooves evenly distributed along the circumferential direction on opposite sides of the slots, the grooves allowing the flow of cleaning liquid.
第二方面,本發明實施例提供了一種用於矽片清洗的設備,該設備包括由根據第一方面所述之承載裝置。In a second aspect, an embodiment of the present invention provides an apparatus for cleaning silicon wafers, the apparatus comprising a carrier according to the first aspect.
第三方面,本發明實施例提供了一種矽片,該矽片由根據第二方面所述之設備清洗得到。In a third aspect, an embodiment of the present invention provides a silicon wafer, which is cleaned by the apparatus according to the second aspect.
本發明實施例提供了一種用於矽片清洗的承載裝置、設備及矽片;該承載裝置包括由多根支撐桿組成的用於承載矽片的承載架;同時對於每根支撐桿而言,通過在每個插槽的相對側沿承載裝置的周向方向形成均勻分佈的多個凹槽,以在清洗矽片的過程中,能夠提高清洗液的流動性,減少支撐桿表面殘留的汙染物,進而提升矽片的清洗品質。The embodiment of the present invention provides a support device, equipment and silicon wafer for cleaning silicon wafers; the support device includes a support frame composed of multiple supporting rods for supporting silicon wafers; at the same time, for each supporting rod, multiple grooves evenly distributed along the circumferential direction of the support device are formed on the opposite sides of each slot, so that in the process of cleaning the silicon wafer, the fluidity of the cleaning liquid can be improved, the contaminants remaining on the surface of the supporting rod can be reduced, and the cleaning quality of the silicon wafer can be improved.
為利 貴審查委員了解本發明之技術特徵、內容與優點及其所能達到之功效,茲將本發明配合附圖及附件,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本發明實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的申請範圍,合先敘明。In order to help you understand the technical features, contents and advantages of the present invention and the effects it can achieve, the present invention is described in detail as follows with the accompanying drawings and appendices in the form of embodiments. The drawings used therein are only for illustration and auxiliary description, and may not be the true proportions and precise configurations after the implementation of the present invention. Therefore, the proportions and configurations of the attached drawings should not be interpreted to limit the scope of application of the present invention in actual implementation.
在本發明實施例的描述中,需要理解的是,術語“長度”、“寬度”、“上”、“下”、“前”、“後”、“左”、“右”、“垂直”、“水平”、“頂”、“底”“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明實施例和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.
此外,術語“第一”、“第二”僅用於描述目的,而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此,限定有“第一”、“第二”的特徵可以明示或者隱含地包括一個或者更多個所述特徵。在本發明實施例的描述中,“多個”的含義是兩個或兩個以上,除非另有明確具體的限定。In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
在本發明實施例中,除非另有明確的規定和限定,術語“安裝”、“相連”、“連接”、“固定”等術語應做廣義理解,例如,可以是固定連接,也可以是可拆卸連接,或成一體;可以是機械連接,也可以是電連接;可以是直接相連,也可以通過中間媒介間接相連,可以是兩個元件內部的連通或兩個元件的相互作用關係。對於本領域的具通常知識者而言,可以根據具體情況理解上述術語在本發明實施例中的具體含義。In the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be a connection between two components or an interaction relationship between two components. For those with ordinary knowledge in the field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to the specific circumstances.
目前,常規技術方案中矽片清洗的相關步驟包括清洗步驟和漂洗步驟,其中,清洗步驟主要採用清洗液對矽片進行濕式清洗,具體來說是如圖1所示,將矽片W放置於清洗槽1中,並將標準清洗液1(standard cleaning-1,SC-1)和標準清洗液2(standard cleaning-2,SC-2)依次噴射至清洗槽1中以清洗矽片W;其中,SC-1通常為氨水與雙氧水的混合溶液,SC-2通常為鹽酸與雙氧水的混合溶液。而漂洗步驟是設置在清洗步驟之後的生產步驟,具體來說是如圖1所示,將表面殘留有清洗液的矽片W放置於漂洗槽2中,並使用超純水或臭氧水對矽片W表面進行沖洗。需要說明的是,清洗步驟和漂洗步驟中均會採用超聲波清洗方法以最大程度地清除矽片W表面殘留的顆粒汙染物及金屬離子雜質。At present, the related steps of silicon wafer cleaning in the conventional technical solution include a cleaning step and a rinsing step, wherein the cleaning step mainly adopts a cleaning liquid to wet-clean the silicon wafer. Specifically, as shown in FIG. 1 , a silicon wafer W is placed in a cleaning tank 1, and a standard cleaning liquid 1 (standard cleaning-1, SC-1) and a standard cleaning liquid 2 (standard cleaning-2, SC-2) are sequentially sprayed into the cleaning tank 1 to clean the silicon wafer W; wherein SC-1 is generally a mixed solution of ammonia water and hydrogen peroxide, and SC-2 is generally a mixed solution of hydrochloric acid and hydrogen peroxide. The rinsing step is a production step after the cleaning step. Specifically, as shown in FIG1 , the silicon wafer W with residual cleaning liquid on the surface is placed in a rinsing tank 2, and ultrapure water or ozone water is used to rinse the surface of the silicon wafer W. It should be noted that ultrasonic cleaning methods are used in both the cleaning step and the rinsing step to remove the residual particulate contaminants and metal ion impurities on the surface of the silicon wafer W to the greatest extent.
需要說明的是,在清洗步驟和漂洗步驟中,使用一定次數的清洗液或者漂洗液會分別通過清洗槽1或者漂洗槽2下方的排水管(圖中未示出)排出外部,同時操作人員並再次向清洗槽1和漂洗槽2的內部裝滿無汙染的新清洗液及新漂洗液以清洗下一批矽片W。It should be noted that in the cleaning step and the rinsing step, the cleaning liquid or the rinsing liquid used a certain number of times will be discharged to the outside through the drain pipe (not shown in the figure) under the cleaning tank 1 or the rinsing tank 2 respectively. At the same time, the operator will fill the cleaning tank 1 and the rinsing tank 2 with new pollution-free cleaning liquid and new rinsing liquid again to clean the next batch of silicon wafers W.
但是,參見圖2和圖3,其示出了清洗槽1的正視圖和俯視圖示意圖,其中如圖2和圖3所示,清洗槽1包括槽體21,在槽體21內盛放有清洗液;另一方面,在槽體21上還設置有承載裝置22A,其中承載裝置22A中包括由3根支撐桿311A組成的承載架31A,每根支撐桿311A的結構具體參見圖4和圖5,結合圖4和圖5可知,每根支撐桿311A上開設有多個插槽3111以使得每片矽片W能夠分別通過插槽3111插入至支撐桿311A中以得到固定,且對於一根支撐桿311A而言,其相鄰兩個插槽3111之間的距離相等,同時三根支撐桿311A上的插槽3111均分別一一對應,且插放同一片矽片的三個插槽3111的槽底處於同一弧面上,弧面的半徑與插放的矽片W的半徑相等。但是,可以理解地,常規技術方案中,在通過清洗槽1底部的排出管(圖中未示出)排出清洗液時,清洗液中的汙染物會殘留於支撐桿311A表面,這主要由於在清洗液排出過程中,槽體21中設置的支撐桿311A減緩了清洗液的流動,造成清洗液中的汙染物殘留於支撐桿311A的表面;應注意的是,即使在清洗槽1中盛滿新的清洗液,上述汙染物仍然會殘留在新清洗液中以在後續清洗過程中汙染矽片W。其次,當矽片W通過插槽3111插入支撐桿311A時,在清洗液的衝擊作用下,導致矽片W與支撐桿311A之間的接觸位置處由於摩擦力的影響產生了顆粒物,如圖6和7所示,其分別示出了接觸位置處的局部放大圖,可以理解地,這些接觸位置處由於清洗液無法到達因而難以進行清洗,進而使得這些接觸位置處積累了大量的顆粒物,在後續矽片W的清洗過程中,這些積累在接觸位置處的顆粒物既會影響矽片W的清洗品質,也會影響支撐桿311A的使用壽命,進而影響承載裝置22A的使用壽命。However, referring to FIG. 2 and FIG. 3, which show schematic diagrams of a front view and a top view of the cleaning tank 1, as shown in FIG. 2 and FIG. 3, the cleaning tank 1 includes a tank body 21, in which a cleaning liquid is contained; on the other hand, a supporting device 22A is further provided on the tank body 21, wherein the supporting device 22A includes a supporting frame 31A composed of three supporting rods 311A, and the structure of each supporting rod 311A is specifically shown in FIG. 4 and FIG. 5. In combination with FIG. 4 and FIG. 5, it can be seen that each supporting rod 311A A plurality of slots 3111 are provided on the support rod 311A so that each silicon wafer W can be inserted into the support rod 311A through the slots 3111 to be fixed. For one support rod 311A, the distance between two adjacent slots 3111 is equal. Meanwhile, the slots 3111 on the three support rods 311A correspond to each other one by one. The bottoms of the three slots 3111 for inserting the same silicon wafer are on the same arc surface, and the radius of the arc surface is equal to the radius of the inserted silicon wafer W. However, it is understandable that in the conventional technical solution, when the cleaning liquid is discharged through the discharge pipe (not shown in the figure) at the bottom of the cleaning tank 1, the contaminants in the cleaning liquid will remain on the surface of the support rod 311A. This is mainly because during the cleaning liquid discharge process, the support rod 311A arranged in the tank body 21 slows down the flow of the cleaning liquid, causing the contaminants in the cleaning liquid to remain on the surface of the support rod 311A. It should be noted that even if the cleaning tank 1 is filled with new cleaning liquid, the above-mentioned contaminants will still remain in the new cleaning liquid to contaminate the silicon wafer W in the subsequent cleaning process. Secondly, when the silicon wafer W is inserted into the support rod 311A through the slot 3111, the impact of the cleaning liquid causes particles to be generated at the contact position between the silicon wafer W and the support rod 311A due to the influence of friction, as shown in Figures 6 and 7, which respectively show partial enlarged views of the contact positions. It can be understood that these contact positions are difficult to clean because the cleaning liquid cannot reach them, resulting in a large amount of particles accumulating at these contact positions. In the subsequent cleaning process of the silicon wafer W, these particles accumulated at the contact positions will affect the cleaning quality of the silicon wafer W, as well as the service life of the support rod 311A, and further affect the service life of the carrier 22A.
基於上述闡述,本發明實施例期望對承載裝置22A進行改進,以使得改進後的承載裝置能夠加快清洗液的流動從而減少支撐桿表面殘留的汙染物,同時能夠減少矽片W與支撐桿之間的接觸位置處的顆粒物含量以及累計速率。具體來說,如圖8所示,其示出了本發明實施例提供的一種用於矽片W清洗的承載裝置22,該承載裝置22包括由多根支撐桿311組成的用於承載矽片W的承載架31;每根支撐桿311包括:
用於插放矽片W的多個插槽3111;
在該插槽3111的相對側沿周向方向均勻分佈的多個凹槽3112,該凹槽3112內允許清洗液流動。
Based on the above description, the embodiment of the present invention hopes to improve the supporting device 22A so that the improved supporting device can speed up the flow of the cleaning liquid to reduce the contaminants remaining on the surface of the supporting rod, and at the same time can reduce the particle content and cumulative rate at the contact position between the silicon wafer W and the supporting rod. Specifically, as shown in FIG. 8 , a carrier 22 for cleaning a silicon wafer W provided by an embodiment of the present invention is shown. The carrier 22 includes a carrier frame 31 for supporting a silicon wafer W composed of a plurality of supporting
對於圖8所示的承載裝置22,通過在插槽3111的相對側沿承載裝置22的周向方向均勻開設有多個凹槽3112,以在清洗矽片W的過程中,提高清洗液的流動性,減少支撐桿311表面殘留的汙染物。當然,也可以理解地,支撐桿311中設置的多個凹槽3112在清洗液排出過程中也能夠加快清洗液的流動,以減少支撐桿311表面附著的汙染物。For the support device 22 shown in FIG8 , multiple grooves 3112 are evenly provided along the circumferential direction of the support device 22 on the opposite sides of the slot 3111, so as to improve the fluidity of the cleaning liquid and reduce the contaminants remaining on the surface of the
對於圖8所示的承載裝置22,在一些可能的實施方式中,優選地,該凹槽3112的寬度不大於該插槽3111的寬度,且該凹槽3112的深度不大於該插槽3111的深度。For the supporting device 22 shown in Figure 8, in some possible embodiments, preferably, the width of the groove 3112 is not greater than the width of the slot 3111, and the depth of the groove 3112 is not greater than the depth of the slot 3111.
對於圖8所示的承載裝置22,在一些可能的實施方式中,優選地,該凹槽3112沿周向方向通入至相對側的該插槽3111,以與相對側的該插槽3111相連通。如圖9所示,在本發明實施例中,在具體實施過程中,可以在每個插槽3111的相對側均開設有對應的凹槽3112,同時為了便於凹槽3112的加工,可以沿支撐桿311的周向方向同時加工插槽3111和凹槽3112,以使得凹槽3112與插槽3111連通呈環形分佈,這樣在保證矽片W穩定程度地基礎上,也能夠最大程度地提高清洗液的流動性,以使得每片矽片W的位置處清洗液均能夠以最大的流速進行流動,從而使得每片矽片W的清洗品質均得到提升。For the supporting device 22 shown in FIG. 8 , in some possible implementations, preferably, the groove 3112 is connected to the slot 3111 on the opposite side along the circumferential direction to communicate with the slot 3111 on the opposite side. As shown in FIG9 , in the embodiment of the present invention, in the specific implementation process, corresponding grooves 3112 can be opened on the opposite sides of each slot 3111. At the same time, in order to facilitate the processing of the grooves 3112, the slots 3111 and the grooves 3112 can be processed simultaneously along the circumferential direction of the
另一方面,對於圖8所示的承載裝置22,在一些可能的實施方式中,如圖10所示,在該矽片W與該支撐桿311的接觸位置處沿徑向方向分別開設有導流槽3113,且該導流槽3113內允許該清洗液流動。具體來說,如圖11所示,在每片矽片W與每根支撐桿311的接觸位置處均分別開設有導流槽3113,以便於最大程度提升矽片W與支撐桿311接觸位置處清洗液的流動性,從而能夠對矽片W與支撐桿311的接觸位置處進行清洗,進而降低了矽片W與支撐桿311接觸位置處顆粒物的聚集和累積速率。On the other hand, for the support device 22 shown in FIG8 , in some possible implementations, as shown in FIG10 ,
優選地,對於上述可能的實施方式,在一些示例中,如圖12所示,每條該導流槽3113包括一節直流槽31131和多節分支狀流槽31132,以使得清洗液經該直流槽31131後流經至各節該多節分支狀流槽31132,可以理解地,為了提高清洗液的流動性,在本發明實施例中,對多節分支狀流槽31132的個數不做具體限定,其多節分支狀流槽31132的個數可以如圖12所示為3個,也可以如圖13所示,多節分支狀流槽31132的個數為5個,具體個數根據支撐桿311的具體尺寸確定。Preferably, for the above possible implementation methods, in some examples, as shown in Figure 12, each of the
優選地,對於上述可能的實施方式,在一些示例中,如圖14所示,該導流槽3113包括一節直流槽31131、多節分支狀流槽31132和一節分流槽31133,以使得清洗液經該直流槽31131後達到該分流槽31133並流經至各節該多節分支狀流槽31132,可以理解地,為了提高矽片W與支撐桿311之間的接觸位置處清洗流動性的同時,又保證矽片W在清洗過程中不發生晃動,因此可以在直流槽31131之後增加分流槽31133,以保證流經上述接觸位置處的清洗液具有穩定的流速;同樣地,在上述實施方式中,對多節分支狀流槽31132的個數不做具體限定,其多節分支狀流槽31132的個數可以如圖14所示為3個,也可以如圖15所示,多節分支狀流槽31132的個數為5個,具體個數根據承載裝置的具體尺寸確定。Preferably, for the above possible implementation, in some examples, as shown in FIG. 14 , the
需要說明的是,在本發明實施例中僅對清洗槽1中的承載裝置22A進行改進,但是改進後的承載裝置22同樣也適用於漂洗槽2中以固定矽片W的同時,提高矽片W的漂洗品質。It should be noted that in the embodiment of the present invention, only the supporting device 22A in the cleaning tank 1 is improved, but the improved supporting device 22 is also applicable to the rinsing tank 2 to fix the silicon wafer W while improving the rinsing quality of the silicon wafer W.
其次,在發明實施例中還提供了一種用於矽片清洗的設備,該設備包括由根據前述技術方案所述之承載裝置。Secondly, in the embodiment of the invention, a device for cleaning silicon wafers is also provided, which includes a supporting device according to the above-mentioned technical solution.
最後,在發明實施例中還提供了一種矽片,該矽片由根據前述技術方案所述之設備清洗得到。Finally, a silicon wafer is also provided in an embodiment of the invention, which is cleaned by the equipment described in the aforementioned technical solution.
需要說明的是:本發明實施例所記載的技術方案之間,在不衝突的情況下,可以任意組合。It should be noted that the technical solutions described in the embodiments of the present invention can be combined arbitrarily without conflict.
需要說明的是:本發明實施例所記載的技術方案之間,在不衝突的情況下,可以任意組合。以上僅為本發明之較佳實施例,並非用來限定本發明之實施範圍,如果不脫離本發明之精神和範圍,對本發明進行修改或者等同替換,均應涵蓋在本發明申請專利範圍的保護範圍當中。It should be noted that the technical solutions described in the embodiments of the present invention can be combined arbitrarily without conflict. The above are only preferred embodiments of the present invention and are not intended to limit the scope of implementation of the present invention. If the present invention is modified or replaced by an equivalent method without departing from the spirit and scope of the present invention, it should be covered by the protection scope of the patent application of the present invention.
1:清洗槽 2:漂洗槽 21:槽體 22:承載裝置 22A:承載裝置 31A:承載架 311:支撐桿 311A:支撐桿 3111:插槽 3112:凹槽 3113:導流槽 31131:直流槽 31132:分支狀流槽 W:矽片 1: cleaning tank 2: rinsing tank 21: tank body 22: carrier 22A: carrier 31A: carrier frame 311: support rod 311A: support rod 3111: slot 3112: groove 3113: flow channel 31131: direct current channel 31132: branching flow channel W: silicon wafer
圖1為本發明實施例提供的一種清洗矽片的生產步驟流程示意圖; 圖2為本發明實施例提供的常規技術方案中清洗槽的結構俯視圖示意圖; 圖3為本發明實施例提供的常規技術方案中清洗槽的結構側視圖示意圖; 圖4為本發明實施例提供的常規技術方案中支撐桿的正視圖示意圖; 圖5為本發明實施例提供的常規技術方案中支撐桿的俯視圖示意圖; 圖6為本發明實施例提供的常規技術方案中矽片與支撐桿的接觸位置側視局部放大圖示意圖; 圖7為本發明實施例提供的常規技術方案中矽片與支撐桿的接觸位置俯視局部放大圖示意圖; 圖8為本發明實施例提供的一種用於矽片清洗的承載裝置結構示意圖; 圖9為本發明實施例提供的支撐桿上開設的凹槽結構示意圖; 圖10為本發明實施例提供的支撐桿中開設的導流槽結構示意圖; 圖11為本發明實施例提供的矽片與導流槽的位置關係示意圖; 圖12為本發明實施例提供的一種導流槽結構示意圖; 圖13為本發明實施例提供的另一種導流槽結構示意圖; 圖14為本發明實施例提供的又一種導流槽結構示意圖; 圖15為本發明實施例提供的再一種導流槽結構示意圖。 Figure 1 is a schematic diagram of a production process of cleaning silicon wafers provided in an embodiment of the present invention; Figure 2 is a schematic diagram of a top view of the structure of the cleaning tank in the conventional technical solution provided in an embodiment of the present invention; Figure 3 is a schematic diagram of a side view of the structure of the cleaning tank in the conventional technical solution provided in an embodiment of the present invention; Figure 4 is a schematic diagram of a front view of a support rod in the conventional technical solution provided in an embodiment of the present invention; Figure 5 is a schematic diagram of a top view of a support rod in the conventional technical solution provided in an embodiment of the present invention; Figure 6 is a schematic diagram of a side view of a partial enlarged view of the contact position between the silicon wafer and the support rod in the conventional technical solution provided in an embodiment of the present invention; Figure 7 is a schematic diagram of a top view of a partial enlarged view of the contact position between the silicon wafer and the support rod in the conventional technical solution provided in an embodiment of the present invention; FIG8 is a schematic diagram of a structure of a carrier device for cleaning a silicon wafer provided in an embodiment of the present invention; FIG9 is a schematic diagram of a structure of a groove provided on a support rod provided in an embodiment of the present invention; FIG10 is a schematic diagram of a structure of a guide groove provided in a support rod provided in an embodiment of the present invention; FIG11 is a schematic diagram of the positional relationship between a silicon wafer and a guide groove provided in an embodiment of the present invention; FIG12 is a schematic diagram of a structure of a guide groove provided in an embodiment of the present invention; FIG13 is a schematic diagram of another structure of a guide groove provided in an embodiment of the present invention; FIG14 is a schematic diagram of another structure of a guide groove provided in an embodiment of the present invention; FIG15 is a schematic diagram of another structure of a guide groove provided in an embodiment of the present invention.
1:清洗槽 1: Cleaning tank
2:漂洗槽 2: Rinse tank
W:矽片 W: Silicon wafer
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