TWI836911B - Measuring method, device and computer storage medium for silicon wafer diameter - Google Patents
Measuring method, device and computer storage medium for silicon wafer diameter Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 170
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 170
- 239000010703 silicon Substances 0.000 title claims abstract description 170
- 238000000034 method Methods 0.000 title claims abstract description 16
- 235000012431 wafers Nutrition 0.000 claims description 149
- 238000005259 measurement Methods 0.000 claims description 33
- 238000000691 measurement method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
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Abstract
本發明公開了一種矽片直徑的測量方法、裝置及電腦存儲介質；矽片直徑的測量裝置包括：光源模組，用於向待測矽片的邊沿發射光束以在設定的基準板上形成第一投影；設置於待測矽片邊沿且能夠旋轉的支撐模組，用於支撐待測矽片；其中，在光源模組向待測矽片的邊沿發射光束後，支撐模組旋轉設定的角度，且光源模組再次向待測矽片的邊沿發射光束以在設定的基準板形成第二投影；數據處理模組，經配置為分別獲取第一投影的直徑數據及第二投影的直徑數據，並根據第一投影的直徑數據與第二投影的直徑數據確定待測矽片完整周向的直徑數據。 The present invention discloses a method, device and computer storage medium for measuring the diameter of a silicon wafer. The device for measuring the diameter of a silicon wafer comprises: a light source module for emitting a light beam toward the edge of a silicon wafer to be measured to form a first projection on a set reference plate; a support module disposed at the edge of the silicon wafer to be measured and capable of rotation, for supporting the silicon wafer to be measured; wherein, when the light source module emits a light beam toward the edge of the silicon wafer to be measured, the light beam is projected onto the edge of the silicon wafer to be measured; After the beam is transmitted, the support module rotates the set angle, and the light source module emits a light beam to the edge of the silicon wafer to be tested again to form a second projection on the set reference plate; the data processing module is configured to obtain the diameter data of the first projection and the diameter data of the second projection respectively, and determine the diameter data of the complete circumference of the silicon wafer to be tested based on the diameter data of the first projection and the diameter data of the second projection.
Description
本發明屬於矽片測量技術領域，尤指一種矽片直徑的測量方法、裝置及電腦存儲介質。 The invention belongs to the technical field of silicon wafer measurement, and in particular refers to a method, device and computer storage medium for measuring the diameter of a silicon wafer.
在矽片加工技術流程中，滾磨的單晶矽棒經切片後，需要對切片所獲得的矽片邊緣進行滾圓加工，使其邊緣能夠形成一定的輪廓形狀，以提高矽片的機械強度和可加工性，同時將矽片的直徑打磨到一定的尺寸，以滿足客戶的要求；因此，矽片經倒角後需檢測其直徑是否滿足客戶規定的要求。此外，矽片在經過拋光步驟之後，通常只需要再經過一到兩個步驟，例如清洗步驟和磊晶步驟(如有必要)，就能夠向客戶交付矽片產品；因此，拋光後的矽片同樣也需要對其直徑進行測量以檢查是否滿足客戶需求。另一方面，在實際操作中，根據客戶的需求，有時也需要向客戶提供承載矽片(carrier wafer)，也就是將兩片拋光矽片進行疊片處理，在疊片處理時要求上述兩片拋光矽片的直徑誤差為±5μm。 In the silicon wafer processing technology process, after the rolled single crystal silicon rod is sliced, the edge of the sliced silicon wafer needs to be rolled to form a certain contour shape to improve the mechanical strength and machinability of the silicon wafer, and at the same time, the diameter of the silicon wafer is polished to a certain size to meet the customer's requirements; therefore, after the silicon wafer is chamfered, its diameter needs to be tested to see if it meets the customer's requirements. In addition, after the polishing step, the silicon wafer usually only needs to go through one or two more steps, such as cleaning and epitaxial steps (if necessary), before the silicon wafer product can be delivered to the customer; therefore, the polished silicon wafer also needs to be measured for its diameter to check whether it meets the customer's requirements. On the other hand, in actual operation, according to customer needs, sometimes it is also necessary to provide customers with carrier wafers, that is, to stack two polished silicon wafers. During the stacking process, the diameter error of the two polished silicon wafers is required to be ±5μm.
為了測量矽片直徑，目前常規方案是藉助測微器或者光學投影的方式通過測量人員進行測量操作。但是依靠人工的手動測量，不僅容易受到人為干擾，而且測量結果還容易受到測量人員素質、工作經驗和測量步驟等人為因素的影響，從而導致測量精度低、偏差大，且耗時費力。此外，為了提高測量精度， 在執行依靠人工的手動測量方案的過程中，需要同時在測量矽片直徑時針對矽片的不同部位多次採樣測量，進一步地導致人工測量的效率低下。 In order to measure the diameter of the silicon wafer, the current conventional solution is to use a micrometer or optical projection to conduct the measurement operation by a measuring personnel. However, relying on manual measurement is not only susceptible to human interference, but the measurement results are also easily affected by human factors such as the quality of the measurement personnel, work experience, and measurement steps, resulting in low measurement accuracy, large deviations, and time and effort. In addition, in order to improve the measurement accuracy, In the process of implementing a manual measurement solution that relies on manual labor, it is necessary to measure the diameter of the silicon wafer multiple times at different parts of the silicon wafer, further leading to inefficiency in manual measurement.
有鑒於此，本發明提供一種矽片直徑的測量方法、裝置及電腦存儲介質；能夠獲得矽片完整周向的直徑資訊，以準確評估矽片的直徑。 In view of this, the present invention provides a silicon wafer diameter measurement method, device and computer storage medium; the diameter information of the entire circumference of the silicon wafer can be obtained to accurately evaluate the diameter of the silicon wafer.
本發明的技術方案是這樣實現的：第一方面，本發明提供了一種矽片直徑的測量裝置，矽片直徑的測量裝置包括：光源模組，用於向待測矽片的邊沿發射光束以在設定的基準板上形成第一投影；設置於待測矽片邊沿且能夠旋轉的支撐模組，用於支撐待測矽片；其中，在光源模組向待測矽片的邊沿發射光束後，支撐模組旋轉設定的角度，且光源模組再次向待測矽片的邊沿發射光束以在設定的基準板形成第二投影；數據處理模組，經配置為分別獲取第一投影的直徑數據及第二投影的直徑數據，並根據第一投影的直徑數據與第二投影的直徑數據確定待測矽片完整周向的直徑數據。 The technical solution of the present invention is implemented as follows: In a first aspect, the present invention provides a device for measuring the diameter of a silicon wafer, the device comprising: a light source module, used to emit a light beam to the edge of the silicon wafer to be measured to form a first projection on a set reference plate; a support module disposed at the edge of the silicon wafer to be measured and capable of rotation, used to support the silicon wafer to be measured; wherein, when the light source module emits a light beam to the edge of the silicon wafer to be measured, ... After the edge emits the light beam, the support module rotates the set angle, and the light source module emits the light beam to the edge of the silicon wafer to be tested again to form a second projection on the set reference plate; the data processing module is configured to obtain the diameter data of the first projection and the diameter data of the second projection respectively, and determine the diameter data of the entire circumference of the silicon wafer to be tested based on the diameter data of the first projection and the diameter data of the second projection.
第二方面，本發明提供了一種矽片直徑的測量方法，矽片直徑的測量方法能夠應用於第一方面所述之矽片直徑的測量裝置，其步驟包括：利用光源模組向待測矽片的邊沿發射光束以在設定的基準板上形成第一投影；旋轉用於支撐待測矽片的支撐模組，利用光源模組再次向待測矽片的邊沿發射光束以在設定的基準板形成第二投影；分別獲取第一投影的直徑數據以及第二投影的直徑數據；根據第一投影的直徑數據及第二投影的直徑數據，確定待測矽片完整周向的直徑數據。 In a second aspect, the present invention provides a method for measuring the diameter of a silicon wafer. The method for measuring the diameter of a silicon wafer can be applied to the measuring device for the diameter of a silicon wafer described in the first aspect. The steps include: using a light source module to direct the silicon wafer to be measured. The edge of the silicon wafer is emitted to form a first projection on the set reference plate; the support module used to support the silicon wafer to be measured is rotated, and the light source module is used to emit light beams to the edge of the silicon wafer to be measured again to form a first projection on the set reference plate. Form a second projection; obtain the diameter data of the first projection and the diameter data of the second projection respectively; and determine the complete circumferential diameter data of the silicon wafer to be measured based on the diameter data of the first projection and the diameter data of the second projection.
第三方面，本發明提供了一種電腦存儲介質，電腦存儲介質存儲有矽片直徑的測量程式，矽片直徑的測量程式被至少一個處理器執行時實現第一方面所述之矽片直徑的測量方法之步驟。 In a third aspect, the present invention provides a computer storage medium. The computer storage medium stores a measurement program for the diameter of the silicon wafer. When the measurement program for the diameter of the silicon wafer is executed by at least one processor, the measurement of the diameter of the silicon wafer described in the first aspect is realized. Method steps.
本發明提供了一種矽片直徑的測量方法、裝置及電腦存儲介質；通過光源模組向待測矽片的邊沿發射光束以在設定的基準板上形成第一投影；將用於支撐待測矽片的支撐模組旋轉設定的角度後，光源模組再次向待測矽片的邊沿發射光束以在設定的基準板形成第二投影，最後根據第一投影的直徑數據與第二投影的直徑數據確定待測矽片完整周向的直徑數據。通過本發明提供之矽片直徑的測量裝置，對矽片直徑的無接觸測量的同時，能夠獲得矽片完整周向的直徑資訊，以準確評估矽片的直徑。 The present invention provides a method, device and computer storage medium for measuring the diameter of a silicon wafer; a light source module is used to emit a light beam to the edge of the silicon wafer to be measured to form a first projection on a set reference plate; after the support module used to support the silicon wafer to be measured is rotated by a set angle, the light source module again emits a light beam to the edge of the silicon wafer to be measured to form a second projection on the set reference plate, and finally the diameter data of the silicon wafer to be measured in the complete circumference is determined according to the diameter data of the first projection and the diameter data of the second projection. The silicon wafer diameter measuring device provided by the present invention can obtain the diameter information of the silicon wafer in the complete circumference while measuring the silicon wafer diameter without contact, so as to accurately evaluate the diameter of the silicon wafer.
1:矽片直徑的測量裝置 1: Silicon wafer diameter measurement device
10:光源模組 10: Light source module
20:基準板 20: Benchmark board
30:支撐模組 30:Support module
40:數據處理模組 40: Data processing module
50:控制模組 50: Control module
d:在基準板上的所形成的投影的直徑 d: The diameter of the projection formed on the reference plate
D:待測矽片的直徑 D: Diameter of silicon wafer to be tested
L1:第一投影與光源模組之間的距離 L1: The distance between the first projection and the light source module
L2:待測矽片與光源模組之間的距離 L2: The distance between the silicon wafer to be tested and the light source module
W:待測矽片 W: Silicon chip to be tested
S601~S604:步驟流程 S601~S604: Step flow
圖1為本發明實施例提供的一種矽片直徑的測量裝置的組成示意圖；圖2為本發明實施例提供的另一種矽片直徑的測量裝置的組成示意圖；圖3為本發明實施例提供的支撐模組旋轉後的位置示意圖；圖4為本發明實施例提供的第一投影上測量點的選取示意圖；圖5為本發明實施例提供的第二投影上測量點的選取示意圖；圖6為本發明實施例提供的一種矽片直徑的測量方法流程示意圖。 FIG1 is a schematic diagram of the composition of a silicon wafer diameter measuring device provided in an embodiment of the present invention; FIG2 is a schematic diagram of the composition of another silicon wafer diameter measuring device provided in an embodiment of the present invention; FIG3 is a schematic diagram of the position of the support module provided in an embodiment of the present invention after rotation; FIG4 is a schematic diagram of the selection of measurement points on the first projection provided in an embodiment of the present invention; FIG5 is a schematic diagram of the selection of measurement points on the second projection provided in an embodiment of the present invention; FIG6 is a schematic diagram of the process of a silicon wafer diameter measurement method provided in an embodiment of the present invention.
下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述。 The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
在本發明實施例中，術語“第一”、“第二”等字樣用於對作用和功能基本相同的相同項或相似項進行區分，應理解，“第一”、“第二”、“第n”之間不具有邏輯或時序上的依賴關係，也不對數量和執行順序進行限定。 In the embodiment of the present invention, the terms "first", "second" and other words are used to distinguish the same or similar items with basically the same functions and functions. It should be understood that "first", "second", " There is no logical or sequential dependency between nth" items, and there is no limit on the number or execution order.
參見圖1和圖2，其示出了本發明實施例提供了一種矽片直徑的測量裝置1的組成，矽片直徑的測量裝置1包括：光源模組10，用於向待測矽片W的邊沿發射光束以在設定的基準板20上形成第一投影(圖中粗黑實線所示)；設置於待測矽片W邊沿且能夠旋轉的支撐模組30，用於支撐待測矽片W；其中，在光源模組10向待測矽片W的邊沿發射光束後，支撐模組30旋轉設定的角度，且光源模組10再次向待測矽片W的邊沿發射光束以在設定的基準板20形成第二投影；數據處理模組40，經配置為分別獲取第一投影的直徑數據及第二投影的直徑數據，並根據第一投影的直徑數據與第二投影的直徑數據確定待測矽片W完整周向的直徑數據。 Referring to FIG. 1 and FIG. 2, it is shown that an embodiment of the present invention provides a composition of a silicon wafer diameter measuring device 1, the silicon wafer diameter measuring device 1 comprises: a light source module 10, used to emit a light beam to the edge of the silicon wafer W to be measured to form a first projection on a predetermined reference plate 20 (shown by a thick black solid line in the figure); a support module 30 disposed at the edge of the silicon wafer W to be measured and capable of rotation, used to support the silicon wafer W to be measured; wherein, when the light source module 10 is rotatable toward the edge of the silicon wafer W to be measured, the support module 30 is rotatable toward the edge of the silicon wafer W to be measured, and ... After the edge of the silicon wafer W to be tested emits a light beam, the support module 30 rotates a set angle, and the light source module 10 emits a light beam to the edge of the silicon wafer W to be tested again to form a second projection on the set reference plate 20; the data processing module 40 is configured to obtain the diameter data of the first projection and the diameter data of the second projection respectively, and determine the diameter data of the entire circumference of the silicon wafer W to be tested according to the diameter data of the first projection and the diameter data of the second projection.
對於本發明實施例提供之矽片直徑的測量裝置1，通過光源模組10向待測矽片W的邊沿發射光束以在設定的基準板20上形成第一投影；將用於支撐待測矽片W的支撐模組30旋轉設定的角度後，光源模組10再次向待測矽片W的邊沿發射光束以在設定的基準板20形成第二投影，最後根據第一投影的直徑數據與第二投影的直徑數據確定待測矽片完整周向的直徑數據。通過本發明實施例提供之矽片直徑的測量裝置1，對待測矽片W直徑的無接觸測量的同時，能夠獲得待測矽片W完整周向的直徑資訊，以準確評估待測矽片W的直徑。 In the silicon wafer diameter measuring device 1 provided in the embodiment of the present invention, a light beam is emitted toward the edge of the silicon wafer W to be measured by the light source module 10 to form a first projection on the set reference plate 20; after the support module 30 used to support the silicon wafer W to be measured is rotated by a set angle, the light source module 10 again emits a light beam toward the edge of the silicon wafer W to be measured to form a second projection on the set reference plate 20, and finally the diameter data of the complete circumference of the silicon wafer to be measured is determined according to the diameter data of the first projection and the diameter data of the second projection. By using the silicon wafer diameter measuring device 1 provided in the embodiment of the present invention, the diameter of the silicon wafer W to be tested can be measured contactlessly while obtaining the diameter information of the silicon wafer W to be tested in the entire circumference, so as to accurately evaluate the diameter of the silicon wafer W to be tested.
對於本發明實施例提供之矽片直徑的測量裝置1，在一些可能的實現方式中，當支撐模組30旋轉設定的角度後，待測矽片W上被支撐模組30遮擋的部分能夠露出。具體來說，當支撐模組30位於圖2中的位置來支撐待測矽片W時，獲得的圓形的第一投影中被支撐模組30遮擋的圓弧部分是沒有顯示處理的，因此為了獲得完整的待測矽片W的直徑資訊，如圖3所示，將支撐模組30旋轉設定的角度後，待測矽片W被支撐模組30遮擋的部分能夠暴露出，因此，當光源模組10再次向待測矽片W發射光束以形成第二投影時，在第二投影上能夠顯示出待測矽片W在第一投影上沒有露出的部分。 For the silicon wafer diameter measuring device 1 provided by the embodiment of the present invention, in some possible implementations, when the support module 30 rotates a set angle, the portion of the silicon wafer W to be measured that is blocked by the support module 30 can be exposed. . Specifically, when the support module 30 is located in the position shown in FIG. 2 to support the silicon wafer W to be tested, the arc part blocked by the support module 30 in the first projection of the circle is not displayed. Therefore, In order to obtain complete diameter information of the silicon wafer W to be tested, as shown in Figure 3, after the support module 30 is rotated by a set angle, the part of the silicon wafer W to be tested that is blocked by the support module 30 can be exposed. Therefore, when When the light source module 10 emits light beams to the silicon chip W to be tested again to form a second projection, the portion of the silicon chip W to be tested that is not exposed in the first projection can be displayed on the second projection.
對於本發明實施例提供之矽片直徑的測量裝置1，在一些可能的實現方式中，如圖2所示，矽片直徑的測量裝置1還包括控制模組50，控制模組50用於控制支撐模組30旋轉設定的角度。 For the silicon wafer diameter measuring device 1 provided by the embodiment of the present invention, in some possible implementations, as shown in FIG. 2 , the silicon wafer diameter measuring device 1 further includes a control module 50 , and the control module 50 is used to control The support module 30 rotates at a set angle.
需要說明的是，在本發明實施例中對於支撐模組30旋轉的設定的角度不作具體的限定，只要能夠經旋轉後，待測矽片W上被支撐模組30遮擋的部分能夠露出即可。 It should be noted that in the embodiment of the present invention, there is no specific limitation on the setting angle of the rotation of the support module 30, as long as the part of the silicon wafer W to be tested that is blocked by the support module 30 can be exposed after rotation.
此外，在本發明實施例中對於支撐模組30的數量不作具體限定，能夠支撐待測矽片W實施本發明實施例提供的技術方案即可。 In addition, in the embodiment of the present invention, there is no specific limitation on the number of supporting modules 30, and it is sufficient to support the silicon wafer W to be tested to implement the technical solution provided by the embodiment of the present invention.
對於本發明實施例提供之矽片直徑的測量裝置1，在一些可能的實現方式中，數據處理模組40，經配置為：在第一投影的周向上選取多組第一測量點，並根據多組第一測量點之間的距離，獲取多組第一投影的直徑數據；在第二投影的周向上選取多組第二測量點，並根據多組第二測量點之間的距離，獲取多組第二投影的直徑數據。 For the silicon wafer diameter measuring device 1 provided by the embodiment of the present invention, in some possible implementations, the data processing module 40 is configured to: select multiple sets of first measurement points in the circumferential direction of the first projection, and obtain multiple sets of diameter data of the first projection according to the distances between the multiple sets of first measurement points; select multiple sets of second measurement points in the circumferential direction of the second projection, and obtain multiple sets of diameter data of the second projection according to the distances between the multiple sets of second measurement points.
可以理解地，為了獲得待測矽片W的準確直徑資訊，如圖4和圖5所示，在第一投影和第二投影上可以選取多個測量點(圖中的黑色圓形所示)，並根據多組測量點之間的距離(圖中的虛線所示)，獲取第一投影和第二投影的直徑數據。 Understandably, in order to obtain accurate diameter information of the silicon wafer W to be measured, as shown in Figures 4 and 5, multiple measurement points can be selected on the first projection and the second projection (shown as black circles in the figure) , and obtain the diameter data of the first projection and the second projection based on the distance between multiple sets of measurement points (shown by the dotted lines in the figure).
對於本發明實施例提供之矽片直徑的測量裝置1，在一些可能的實現方式中，數據處理模組40，還經配置為：根據多組第一投影的直徑數據，根據式(1)獲得待測矽片的第一直徑數據；D 1i =(d 1i ×L 2 )/L 1 (1) For the silicon wafer diameter measuring device 1 provided in the embodiment of the present invention, in some possible implementations, the data processing module 40 is further configured to: obtain the first diameter data of the silicon wafer to be measured according to the formula (1) based on the diameter data of the plurality of first projections; D 1 i = (d 1 i × L 2 ) / L 1 (1)
其中，D 1i 表示第i組待測矽片的第一直徑；d 1i 表示第i組第一投影的直徑；L 2表示待測矽片與光源模組之間的距離；L 1表示第一投影與光源模組之間的距離；根據多組第二投影的直徑數據，根據式(2)獲得多組待測矽片的第二直徑數據；D 2j =(d 2j ×L 2 )/L 1 (2) Wherein, D 1 i represents the first diameter of the i-th group of silicon wafers to be tested; d 1 i represents the diameter of the i-th group of first projections; L 2 represents the distance between the silicon wafer to be tested and the light source module; L 1 represents the distance between the first projection and the light source module; Based on the diameter data of multiple groups of second projections, the second diameter data of multiple groups of silicon wafers to be tested are obtained according to formula (2); D 2 j = (d 2 j × L 2 ) / L 1 (2)
其中，D 2j 表示待測矽片的第j組直徑；d 2j 表示第二投影的第j組直徑；L 2表示待測矽片與光源模組之間的距離；L 1表示第二投影與光源模組之間的距離；根據待測矽片的多組第一直徑數據和多組第二直徑數據，確定待測矽片的完整周向的直徑數據。 Among them, D 2 j represents the j-th group diameter of the silicon chip to be tested; d 2 j represents the j-th group diameter of the second projection; L 2 represents the distance between the silicon chip to be tested and the light source module; L 1 represents the second The distance between the projection and the light source module; determine the complete circumferential diameter data of the silicon wafer to be measured based on multiple sets of first diameter data and multiple sets of second diameter data of the silicon wafer to be measured.
由圖1可以看出，在基準板20上的所形成的投影的直徑d與待測矽片的直徑D之間存在幾何比例關係，即D=(d×L 2 )/L 1，由此可根據第一投影的多組直徑數據能夠獲得待測矽片W的第一直徑數據，根據第二投影的多組直徑數據能夠獲得待測矽片W的第二直徑數據，可以理解地，在待測矽片W的第二直徑數據中包含了待測矽片W的第一直徑數據中沒有獲得的直徑數據，由此，結 合待測矽片W的第一直徑數據和第二直徑數據能夠獲得待測矽片W完整周向的直徑數據。 It can be seen from Figure 1 that there is a geometric proportional relationship between the diameter d of the projection formed on the reference plate 20 and the diameter D of the silicon wafer to be measured, that is, D = (d × L 2 ) / L 1 , thus The first diameter data of the silicon wafer W to be measured can be obtained according to the plurality of sets of diameter data of the first projection, and the second diameter data of the silicon wafer W to be measured can be obtained according to the plurality of sets of diameter data of the second projection. Understandably, in The second diameter data of the silicon wafer W to be tested includes diameter data that is not obtained in the first diameter data of the silicon wafer W to be tested. Therefore, combining the first diameter data and the second diameter data of the silicon wafer W to be tested can Obtain the complete circumferential diameter data of the silicon wafer W to be tested.
可以理解地，根據待測矽片完整周向的直徑數據可以獲取待測矽片的平均直徑，直徑的最大值以及判斷待測矽片W的直徑一致性與標準值之間的差異，進而能夠準確評估待測矽片的直徑。 It can be understood that the average diameter of the silicon wafer to be tested, the maximum diameter, and the difference between the diameter consistency of the silicon wafer to be tested and the standard value can be obtained based on the diameter data of the silicon wafer to be tested along the entire circumference, so as to accurately evaluate the diameter of the silicon wafer to be tested.
參見圖6，其示出了本發明實施例提供的一種矽片直徑的測量方法，主要能夠應用於前述技術方案所述之矽片直徑的測量裝置1，其步驟包括：S601、利用光源模組向待測矽片的邊沿發射光束以在設定的基準板上形成第一投影；S602、旋轉用於支撐待測矽片的支撐模組，利用光源模組再次向待測矽片的邊沿發射光束以在設定的基準板形成第二投影；S603、分別獲取第一投影的直徑數據以及第二投影的直徑數據；S604、根據第一投影的直徑數據及第二投影的直徑數據，確定待測矽片完整周向的直徑數據。 Referring to Figure 6, a method for measuring the diameter of a silicon wafer provided by an embodiment of the present invention is shown, which can be mainly applied to the measuring device 1 for the diameter of a silicon wafer described in the aforementioned technical solution. The steps include: S601, using a light source module Emit a light beam to the edge of the silicon wafer to be tested to form a first projection on the set reference plate; S602. Rotate the support module used to support the silicon wafer to be tested, and use the light source module to emit a light beam to the edge of the silicon wafer to be measured again. Form a second projection on the set reference plate; S603, obtain the diameter data of the first projection and the diameter data of the second projection respectively; S604, determine the silicon to be measured based on the diameter data of the first projection and the diameter data of the second projection. The complete circumferential diameter data of the piece.
可選地，在一些示例中，分別獲取第一投影的直徑數據以及第二投影的直徑數據，包括：在第一投影的周向上選取多組第一測量點，並根據多組第一測量點之間的距離，獲取多組第一投影的直徑數據；在第二投影的周向上選取多組第二測量點，並根據多組第二測量點之間的距離，獲取多組第二投影的直徑數據。 Optionally, in some examples, obtaining the diameter data of the first projection and the diameter data of the second projection respectively includes: selecting multiple sets of first measurement points in the circumferential direction of the first projection, and based on the multiple sets of first measurement points. to obtain multiple sets of diameter data of the first projection; select multiple sets of second measurement points in the circumferential direction of the second projection, and obtain multiple sets of second projection diameter data based on the distance between the multiple sets of second measurement points. diameter data.
可選地，在一些示例中，根據第一投影的直徑數據及第二投影的直徑數據，確定待測矽片完整周向的直徑數據，包括：根據多組第一投影的直徑數據，根據式(1)獲得待測矽片的第一直徑數據；根據多組第二投影的直徑數據，根據式(2)獲得多組待測矽片的第二直徑數據；根據待測矽片的多組第一直徑數據和多組第二直徑數據，確定待測矽片的完整周向的直徑數據。 Optionally, in some examples, the diameter data of the entire circumference of the silicon wafer to be tested is determined according to the diameter data of the first projection and the diameter data of the second projection, including: obtaining the first diameter data of the silicon wafer to be tested according to formula (1) according to multiple sets of diameter data of the first projection; obtaining multiple sets of second diameter data of the silicon wafer to be tested according to formula (2) according to multiple sets of diameter data of the second projection; determining the diameter data of the entire circumference of the silicon wafer to be tested according to multiple sets of first diameter data and multiple sets of second diameter data of the silicon wafer to be tested.
對於上述矽片直徑的測量方法，其具體方案可以以軟體產品的形式體現出來，該軟體產品存儲在一個存儲介質中，包括若干指令用以使得一台電腦設備(可以是個人電腦，伺服器，或者網路設備等)或處理器(processor)執行本實施例所述之矽片直徑的測量方法的全部或部分步驟。而前述的存儲介質包括：USB碟、行動硬碟、唯讀記憶體(Read Only Memory，ROM)、隨機存取記憶體(Random Access Memory，RAM)、磁碟或者光碟等各種可以儲存程式代碼的介質。 For the above-mentioned silicon wafer diameter measurement method, the specific solution can be embodied in the form of a software product. The software product is stored in a storage medium and includes a number of instructions to enable a computer device (which can be a personal computer, a server, or network equipment, etc.) or a processor (processor) to execute all or part of the steps of the silicon wafer diameter measuring method described in this embodiment. The aforementioned storage media include: USB disk, mobile hard disk, read only memory (ROM), random access memory (Random Access Memory, RAM), magnetic disk or optical disk, etc. that can store program codes. medium.
因此，本實施例提供了一種電腦存儲介質，電腦存儲介質存儲有矽片直徑的測量程式，矽片直徑的測量程式被至少一個處理器執行時實現前述技術方案所述之矽片直徑的測量方法之步驟。 Therefore, this embodiment provides a computer storage medium, which stores a silicon wafer diameter measurement program. When the silicon wafer diameter measurement program is executed by at least one processor, the steps of the silicon wafer diameter measurement method described in the aforementioned technical solution are implemented.
需要說明的是：本發明實施例所記載的技術方案之間，在不衝突的情況下，可以任意組合。 It should be noted that the technical solutions described in the embodiments of the present invention can be combined arbitrarily without conflict.
以上所述，僅為本發明的具體實施方式，但本發明的保護範圍並不局限於此，任何熟悉本技術領域具通常知識者在本發明揭露的技術範圍內，可輕易想到變化或替換，都應涵蓋在本發明的保護範圍之內。因此，本發明的保護範圍應以申請專利範圍的保護範圍為準。 The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person familiar with the technical field and having ordinary knowledge can easily think of changes or substitutions within the technical scope disclosed in the present invention. All are covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the patent application.
1:矽片直徑的測量裝置 1: Silicon wafer diameter measurement device
10:光源模組 10:Light source module
20:基準板 20: Benchmark board
d:在基準板上的所形成的投影的直徑 d: Diameter of the projection formed on the reference plate
D:待測矽片的直徑 D: Diameter of the silicon wafer to be tested
L1:第一投影與光源模組之間的距離 L1: The distance between the first projection and the light source module
L2:待測矽片與光源模組之間的距離 L2: The distance between the silicon chip to be tested and the light source module
W:待測矽片 W: Silicon chip to be tested
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| US4887904A (en) * | 1985-08-23 | 1989-12-19 | Canon Kabushiki Kaisha | Device for positioning a semi-conductor wafer |
| EP0665576A2 (en) * | 1994-01-27 | 1995-08-02 | Tokyo Seimitsu Co.,Ltd. | Wafer diameter/sectional shape measuring machine |
| US6342705B1 (en) * | 1999-09-10 | 2002-01-29 | Chapman Instruments | System for locating and measuring an index mark on an edge of a wafer |
| US20130139950A1 (en) * | 2011-12-02 | 2013-06-06 | Kobelco Research Institute, Inc. | Rotational misalignment measuring device of bonded substrate, rotational misalignment measuring method of bonded substrate, and method of manufacturing bonded substrate |
| TW201538926A (en) * | 2014-02-25 | 2015-10-16 | Kla Tencor Corp | Automated inline inspection and metrology using SHADOW-GRAM images |
| TW202138756A (en) * | 2020-02-20 | 2021-10-16 | 美商科磊股份有限公司 | Measurement and control of wafer tilt for x-ray based metrology |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4887904A (en) * | 1985-08-23 | 1989-12-19 | Canon Kabushiki Kaisha | Device for positioning a semi-conductor wafer |
| EP0665576A2 (en) * | 1994-01-27 | 1995-08-02 | Tokyo Seimitsu Co.,Ltd. | Wafer diameter/sectional shape measuring machine |
| US6342705B1 (en) * | 1999-09-10 | 2002-01-29 | Chapman Instruments | System for locating and measuring an index mark on an edge of a wafer |
| US20130139950A1 (en) * | 2011-12-02 | 2013-06-06 | Kobelco Research Institute, Inc. | Rotational misalignment measuring device of bonded substrate, rotational misalignment measuring method of bonded substrate, and method of manufacturing bonded substrate |
| TW201538926A (en) * | 2014-02-25 | 2015-10-16 | Kla Tencor Corp | Automated inline inspection and metrology using SHADOW-GRAM images |
| US9734568B2 (en) * | 2014-02-25 | 2017-08-15 | Kla-Tencor Corporation | Automated inline inspection and metrology using shadow-gram images |
| TW202138756A (en) * | 2020-02-20 | 2021-10-16 | 美商科磊股份有限公司 | Measurement and control of wafer tilt for x-ray based metrology |
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