TWI836247B - 基板貼合裝置及半導體裝置之製造方法 - Google Patents
基板貼合裝置及半導體裝置之製造方法 Download PDFInfo
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- TWI836247B TWI836247B TW110128106A TW110128106A TWI836247B TW I836247 B TWI836247 B TW I836247B TW 110128106 A TW110128106 A TW 110128106A TW 110128106 A TW110128106 A TW 110128106A TW I836247 B TWI836247 B TW I836247B
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Abstract
本實施方式係關於一種基板貼合裝置及半導體裝置之製造方法。
根據一實施方式,提供一種具有第1吸附平台與第2吸附平台之基板貼合裝置。第1吸附平台具有第1電磁力產生部。第1吸附平台能吸附第1基板。第2吸附平台具有第2電磁力產生部。第2電磁力產生部與第1電磁力產生部對向。第2吸附平台能吸附第2基板。
Description
本實施方式係關於一種基板貼合裝置及半導體裝置之製造方法。
基板貼合裝置藉由使2片基板吸附於2個吸附平台上,並使2個吸附平台相互接近,來使2片基板貼合。此時,希望將2片基板適當地貼合。
一實施方式提供一種能將2片基板適當地貼合之基板貼合裝置及半導體裝置之製造方法。
根據本實施方式,提供一種具有第1吸附平台與第2吸附平台之基板貼合裝置。第1吸附平台具有第1電磁力產生部。第1吸附平台能吸附第1基板。第2吸附平台具有第2電磁力產生部。第2電磁力產生部與第1電磁力產生部對向。第2吸附平台能吸附第2基板。
以下,參照隨附圖式,對實施方式之基板貼合裝置詳細地進行說明。再者,本發明並不由該實施方式來限定。
(實施方式)
實施方式之基板貼合裝置使2片基板(例如,2片晶圓)吸附於2個吸附平台上,來使2片基板貼合。例如,藉由將2片基板之電極彼此接合而構成半導體積體電路,能使半導體積體電路高密度化、高功能化。即,於成對之2片基板各自之表面形成接合電極,使2片基板重疊並將電極彼此接合,而完成基板之積層。於積層基板中,若於其貼合界面處存在空隙(空腔),則有可能會難以實現積層基板所要求之功能(例如,電極彼此之電接合)。
於使2片基板貼合之貼合技術中,有時會利用撞擊器(striker)等按壓構件將第1基板壓抵於第2基板側而使2片基板貼合。此時,第1基板之端部有可能會因自重而接觸於第2基板。雖然於基板之中心部,被按壓構件施加了壓力之部分會被壓接,但存在基板之外周部因基板之自重而遭受意外壓力之情況。藉此,若基板之緣部接合,則無法徹底排出基板內側之空氣(導致空隙缺陷之根源)之可能性較大。即,若基板之外周部較比外周部靠內側之部分先壓接,則空氣將無法徹底排出而成為導致空隙缺陷之根源。因此,希望基板貼合裝置執行能抑制界面處產生空隙(空腔)之貼合動作。
對此,考慮於下側之吸附平台內配置複數個電磁鐵,於上側之吸附平台內配置磁性盤,而構成基板貼合裝置。於該情形時,基板貼合裝置於使2片基板吸附於2個吸附平台上之狀態下,對複數個電磁鐵相互獨立地加以控制,使之產生磁力,而將磁性盤作為磁軛發揮功能。藉此,亦考慮能對2片基板間作用二維分佈之加壓力。
然而,於該基板貼合裝置中,有上側之吸附平台之磁性盤上產生意外之殘留磁性,而導致磁性灰塵吸附於磁性盤上並如此維持之風險。基板貼合裝置中,若一直為磁性灰塵吸附於上側之吸附平台上之狀態,則有上側之吸附平台之表面平坦性惡化,從而無法再利用上側之吸附平台吸附基板之可能性。或者,即便能利用上側之吸附平台吸附基板,基板貼合裝置將2片基板貼合時,亦有可能會於貼合界面處產生空隙(空腔)或導致基板破損。
又,關於基板級別之積體化,係藉由將以三維記憶體(例如,三維快閃記憶體)為代表之三維電路圖案積層而進行高積體化,以此代替二維之微細化。其結果,由於高積層化所導致之各向異性應力應變,有時會發生基板級別之較大翹曲,而使基板之表面形狀成為複雜之構形(topography)。於該情形時,基板貼合裝置若利用平坦且剛性較高之磁性盤自上側對基板作用加壓力,則有可能會無法追隨基板表面之複雜構形,而導致基板破損。
因此,於本實施方式中,基板貼合裝置中,將能二維調整磁力之電磁力產生部分別設置於上下之吸附平台,藉此能實現減少磁性灰塵且追隨基板表面之構形之貼合。
具體而言,基板貼合裝置使上下之吸附平台分別吸附基板,並使上下之電磁力產生部之特定部位(例如,中央部)選擇性地產生電磁力。藉此,基板貼合裝置於上下之電磁力產生部之特定部位對上下之基板作用加壓力,使上下之基板於特定部位相互接觸。基板貼合裝置使上下之電磁力產生部中以特定部位為起點於平面方向依次產生電磁力之區域擴大,而使上下之基板之接觸端於平面方向推進。此時,基板貼合裝置藉由調整電流之大小等操作能任意地調整電磁力之大小,從而能以追隨基板表面之構形之方式一面調整加壓力之大小一面對基板作用該加壓力。藉此,能追隨基板表面之構形且抑制貼合界面處產生空隙(空腔)地使上下之基板貼合。基板貼合裝置於使上下之基板貼合之後,使上下之電磁力產生部停止產生電磁力。基板貼合裝置亦可於將貼合後之積層基板搬出之後,使上下之電磁力產生部產生極性與貼合時相反之電磁力。藉此,於上下之吸附平台存在磁化部分之情形時,能將該部分消磁,從而能容易地將磁性灰塵去除。因此,能實現減少磁性灰塵且追隨基板表面之構形之貼合。
更具體而言,應用基板貼合裝置1之製造系統100可如圖1所示構成。圖1係表示應用基板貼合裝置1之製造系統100之構成之圖。製造系統100具有複數個基板貼合裝置1-1~1-4、搬送系統2及搬入搬出部3。各基板貼合裝置1可同樣地構成。各基板貼合裝置1具有用以吸附上側之基板之吸附平台、及用以吸附下側之基板之吸附平台。以下,將與吸附平台之主面垂直之方向設為Z方向,將於與Z方向垂直之平面內相互正交之2個方向設為X方向及Y方向。複數個基板貼合裝置1-1~1-4分別由密閉容器(未圖示)等密閉而能減壓,且具有於基板搬入後能將基板貼合裝置1內減壓之構成。
搬送系統2以將各基板貼合裝置1-1~1-4橫斷之方式配置。例如,搬送系統2具有:搬送軌道2b,其沿著X方向延伸;搬送機器人2a,其能沿著搬送軌道2b於X方向移動;搬送軌道2d,其沿著Y方向延伸;以及搬送機器人2c,其能沿著搬送軌道2d於Y方向移動。基板貼合裝置1-1~1-4配置於搬送系統2之+Y側,並且沿著搬送軌道2b排列於X方向。基板貼合裝置1-1~1-2配置於搬送軌道2b之-Y側,並且沿著搬送軌道2b排列於X方向。基板貼合裝置1-3~1-4配置於搬送軌道2b之+Y側,並且沿著搬送軌道2b排列於X方向。
搬入搬出部3與搬送系統2相鄰配置。搬入搬出部3具有複數個載置台(複數個FOUP(front opening unified pod,前開式晶圓盒))3a~3d。複數個載置台3a~3d配置於搬送系統2之-X側,並且沿著搬送軌道2d排列於Y方向。各載置台3a~3d分別供載置收容複數片(例如,25片)基板之匣盒。
搬送系統2能於各載置台3a~3d與各基板貼合裝置1-1~1-4之間搬送貼合前之基板或貼合後之積層基板。藉此,能使複數個基板貼合裝置1-1~1-4相互並行地進行貼合動作,從而能有效率地進行複數組基板之貼合動作。
又,各基板貼合裝置1可如圖2所示構成。圖2係表示基板貼合裝置1之構成之圖。
基板貼合裝置1具有吸附平台10、吸附平台20及控制器60。再者,吸附平台10、吸附平台20、及吸附平台10與吸附平台20間之空間由密閉容器(未圖示)等密閉而能減壓,且具有於基板搬入後能將基板貼合裝置1內減壓之構成。
吸附平台10及吸附平台20以於使用時相互對向之方式配置。吸附平台10具有平台基座11,該平台基座11具有大致平板狀之外形,吸附平台20具有平台基座21,該平台基座21具有大致平板狀之外形。平台基座11於與平台基座21對向之一側具有主面11a,平台基座21於與平台基座11對向之一側具有主面21a。主面11a及主面21a分別與Z方向大致垂直。
吸附平台10除了平台基座11以外,進而具有電磁力產生部12、吸附部13、驅動機構14及拍攝部15。
平台基座11為沿著XY方向延伸之平板狀之構件,且具有自-Z側向+Z方向凹陷之凹陷部。
電磁力產生部12收容於平台基座11之凹陷部。電磁力產生部12根據控制器60之控制,能產生二維分佈之電磁力。電磁力產生部12具有複數個電磁元件12a-1~12a-n。複數個電磁元件12a-1~12a-n排列於XY方向,並且各自以能於Z方向位移之方式構成。各電磁元件12a-1~12a-n亦可為電磁鐵。
例如,複數個電磁元件12a-1~12a-n如圖3所示,呈放射狀配置於平台基座11之主面11a。圖3係表示吸附平台10之構成之俯視圖。作為於Z方向透視吸附平台10之平面構成,圖3例示出複數個電磁元件12a-1~12a-n之排列為XY方向之十字狀排列與使該十字狀排列圍繞Z軸旋轉而形成之傾斜十字狀排列之組合之情況。十字狀排列之中心與傾斜十字狀排列之中心分別配置於平台基座11之中心附近。
吸附部13配置於複數個電磁元件12a-1~12a-n之間。吸附部13為真空吸盤機構或靜電吸盤機構。於吸附部13為真空吸盤機構之情形時,如圖2所示,具有複數個吸附孔13a-1~13a-k、真空配管13b及真空泵13c。各吸附孔13a經由真空配管13b與真空泵13c連通。真空泵13c根據控制器60之控制,可經由真空配管13b將吸附孔13a真空排氣。藉此,吸附部13能吸附基板。
驅動機構14根據控制器60之控制,於XYZ方向驅動平台基座11,而使複數個電磁元件12a-1~12a-n一起全域移動。複數個電磁元件12a-1~12a-n根據控制器60之控制,能個別產生電磁力。各電磁元件12a-1~12a-n之主要部分以能於+Z方向及-Z方向位移之方式由平台基座11予以支持。
例如,各電磁元件12a如圖4A、圖4B所示,具有殼體12a1、線圈12a2、緩衝構件12a3、導線12a4、導線12a5及彈性構件12a8。殼體12a1之-Z側開放,具有以Z方向為長度方向之大致長方體形狀。線圈12a2收容於殼體12a1內,且捲繞有能於Z方向產生電磁力之導線。線圈12a2之一端經由導線12a4電性連接於控制器60,另一端經由導線12a5電性連接於控制器60。緩衝構件12a3具有沿著XY方向延伸之大致平板形狀,且自-Z側將殼體12a1封閉。緩衝構件12a3於電磁元件12a對基板加壓時緩衝施加於基板背面之力,並且吸收加壓面12a6與基板背面之平行度偏差,而使施加於基板背面之力均勻化。緩衝構件12a3例如可由橡膠等彈性體形成。彈性構件12a8如圖4B所示,將殼體12a1之與加壓面12a6為相反側之面12a7連接於平台基座11之內壁面11b,能彈性變形地支持殼體12a1。彈性構件12a8例如可由橡膠等彈性體形成。藉此,如圖4B中虛線箭頭所示,殼體12a1及緩衝構件12a3能向+Z方向及-Z方向位移。
圖4A所示之導線12a4及導線12a5電性連接於線圈12a2與控制器60之間,朝與線圈12a2中所應產生之電磁力對應之方向流通電流。如圖4A中兩點鏈線所示,若按控制器60→導線12a4→線圈12a2→導線12a5→控制器60之方向流通電流,則電磁元件12a作為以加壓面12a6為N極、以面12a7為S極之磁鐵發揮功能。如圖4A中單點鏈線所示,若按控制器60→導線12a5→線圈12a2→導線12a4→控制器60之方向流通電流,則電磁元件12a作為以加壓面12a6為S極、以面12a7為N極之磁鐵發揮功能。
圖2所示之拍攝部15配置於複數個電磁元件12a-1~12a-n之間(參照圖3)。拍攝部15具有複數個拍攝元件15a-1~15a-k。複數個拍攝元件15a-1~15a-k根據控制器60之控制,於對準時接收可見光或紅外光而拍攝基板上之基準標記。各拍攝元件15a-1~15a-k亦可包含CCD(Charge Coupled Device,電荷耦合器件)圖像感測器或CMOS(complementary metal oxide semiconductor,互補金屬氧化物半導體)圖像感測器等相機。
吸附平台20除了平台基座21以外,進而具有電磁力產生部22、吸附部23、驅動機構24及拍攝部25。
平台基座21為沿著XY方向延伸之平板狀之構件,且具有自-Z側向+Z方向凹陷之凹陷部。
電磁力產生部22收容於平台基座21之凹陷部。電磁力產生部22根據控制器60之控制,能產生二維分佈之電磁力。電磁力產生部22具有複數個電磁元件22a-1~22a-n。複數個電磁元件12a-1~12a-n排列於XY方向,並且分別以能於Z方向位移之方式構成。各電磁元件22a-1~22a-n亦可為電磁鐵。
例如,複數個電磁元件22a-1~22a-n如圖3所示,呈放射狀配置於平台基座21之主面21a。圖3係表示吸附平台20之構成之俯視圖。作為於Z方向透視吸附平台20所看到之平面構成,圖3例示了複數個電磁元件22a-1~22a-n之排列為XY方向之十字狀排列與使該十字狀排列圍繞Z軸旋轉而形成之傾斜十字狀排列之組合之情況。十字狀排列之中心與傾斜十字狀排列之中心分別配置於平台基座21之中心附近。
吸附部23配置於複數個電磁元件22a-1~22a-n之間。吸附部23為真空吸盤機構或靜電吸盤機構。於吸附部23為真空吸盤機構之情形時,如圖2所示,具有複數個吸附孔23a-1~23a-k、真空配管23b及真空泵23c。各吸附孔23a經由真空配管23b與真空泵23c連通。真空泵23c根據控制器60之控制,可經由真空配管23b將吸附孔23a真空排氣。藉此,吸附部23能吸附基板。
驅動機構24根據控制器60之控制,於XYZ方向驅動平台基座21,藉此使複數個電磁元件22a-1~22a-n一起全域移動。複數個電磁元件22a-1~22a-n根據控制器60之控制,能分別產生電磁力。各電磁元件22a-1~22a-n之主要部分以能向+Z方向及-Z方向位移之方式由平台基座21支持。
例如,各電磁元件22a具有使圖4A、圖4B所示之構成上下反轉而形成之構成。於各電磁元件22a中,連接於線圈之一端之導線與連接於另一端之導線電性連接於線圈與控制器60之間,向與線圈中所應產生之電磁力對應之方向流通電流。於使圖4A上下反轉而形成之構成中,若按兩點鏈線所示之方向流通電流,則電磁元件22a作為以+Z側之加壓面為N極、以-Z側之面為S極之磁鐵發揮功能。於使圖4A上下反轉而形成之構成中,若按單點鏈線所示之方向流通電流,則電磁元件22a作為以+Z側之加壓面為S極、以-Z側之面為N極之磁鐵發揮功能。
此時,相互對向之電磁元件12a及22a若加壓面之磁極為不同極,則如圖4C中虛線箭頭所示,互受彼此吸引之電磁力作用,而可分別向-Z方向及+Z方向位移。電磁元件12a及22a若加壓面之磁極為同極,則如圖4D中虛線箭頭所示,互受彼此排斥之電磁力作用,而可分別向+Z方向及-Z方向位移。
圖2所示之拍攝部25配置於複數個電磁元件22a-1~22a-n之間(參照圖3)。拍攝部25具有複數個拍攝元件25a-1~25a-k。複數個拍攝元件25a-1~25a-k根據控制器60之控制,於對準時接受可見光或紅外光,拍攝基板上之基準標記。各拍攝元件25a-1~25a-k亦可包含CCD圖像感測器或CMOS圖像感測器等相機。
控制器60以使吸附平台10吸附基板W1,使吸附平台20吸附基板W2之方式進行控制。控制器60於使吸附平台10吸附基板W1,使吸附平台20吸附基板W2之狀態下,使吸附平台10與吸附平台20相對接近,形成基板W1之表面與基板W2之表面相互接近之狀態。控制器60於基板W1之表面與基板W2之表面接近之狀態下,對電磁力產生部12與電磁力產生部22相互獨立地加以控制。又,控制器60於基板W1之表面與基板W2之表面接近之狀態下,對複數個電磁元件12a-1~12a-n相互獨立地加以控制,且對複數個電磁元件22a-1~22a-n相互獨立地加以控制。
控制器60以分別包含相互對向之電磁元件12a與電磁元件22a之複數個組產生二維分佈之電磁力,而對上側之基板W1與下側之基板W2之間作用二維分佈之加壓力。藉此,控制器60使上側之基板W1與下側之基板W2相互接觸,並使上側之基板W1與下側之基板W2之接觸端於平面方向推進。例如,控制器60隨著時間之經過,使複數個電磁元件12a-1~12a-n、22a-1~22a-n中產生電磁力之電磁元件12a、22a之個數自中央部之電磁元件開始呈同心圓狀逐漸增加。即,控制器60隨著時間之經過,使產生電磁力之電磁元件12a、22a之區域按圖3所示之區域R1→區域R2→區域R3→區域R4→區域R5→區域R6逐漸擴展。藉此,控制器60使上側之基板W1與下側之基板W2相互以中央部接觸,並使上側之基板W1與下側之基板W2之接觸端自中央部向外側推進。其結果,能抑制貼合界面處產生空隙(空腔)地使上側之基板W1與下側之基板W2貼合。即,能以自基板W1、W2之中心部擠出空氣之方式施加磁場、負載而將基板W1、W2接合。
再者,只要能抑制空隙之產生,上側之基板W1與下側之基板W2之接觸端亦可為中央部以外之特定部位。於該情形時,控制器60使複數個電磁元件12a-1~12a-n、22a-1~22a-n中產生電磁力之電磁元件之個數自特定部位之電磁元件開始呈同心圓狀逐漸增加。藉此,控制器60使上側之基板W1與下側之基板W2之接觸端於平面方向推進,從而能以自基板W1、W2之接觸端擠出空氣之方式施加磁場、負載而將基板W1、W2接合。
接下來,使用圖5~圖13B對基板貼合裝置1之動作進行說明。圖5係表示基板貼合裝置1之動作之流程圖。圖6A~圖13B係表示基板貼合裝置1之動作之剖視圖。
基板貼合裝置1進行基板W1及基板W2之搬入(Wafer loading)(S1)。例如,如圖6A所示,基板貼合裝置1使吸附平台10與吸附平台20相互於Z方向分隔開來。此時,控制器60要使吸附部13及吸附部23解除吸附動作,並使電磁力產生部12及電磁力產生部22停止產生電磁力。搬送機器人2c自搬入搬出部3取出基板W1及基板W2。搬送機器人2c使基板W1吸附於臂之+Z側之面上,使基板W2吸附於臂之-Z側之面上,並將基板W1及基板W2向搬送機器人2a遞交。搬送機器人2a使基板W1吸附於臂之+Z側之面上,使基板W2吸附於臂之-Z側之面上,並將基板W1及基板W2向吸附平台10及吸附平台20搬送。搬送機器人2a使臂向+Y方向移動,如圖6B所示,使基板W1及基板W2位於Z方向上之吸附平台10與吸附平台20之間。
基板貼合裝置1進行基板W1及基板W2向吸附平台10及吸附平台20上之吸附(Wafer Chucking)(S2)。例如,搬送機器人2a使臂向-Z方向移動,如圖7A所示,將基板W2載置於吸附平台20之主面21a上。控制器60控制吸附部23(參照圖2),利用吸附部23將基板W2吸附於主面21a上。隨之,搬送機器人2a解除基板W2吸附於臂之-Z側之面上之狀態。又,搬送機器人2a使臂向+Z方向移動,如圖7A所示,將基板W1載置於吸附平台10之主面11a上。控制器60控制吸附部13(參照圖2),利用吸附部13將基板W1吸附於主面11a上。隨之,搬送機器人2a解除基板W1吸附於臂之+Z側之面上之狀態。搬送機器人2a使臂向-Y方向移動,如圖7B所示,使臂自Z方向上之吸附平台10與吸附平台20之間退避。
基板貼合裝置1對基板W1及基板W2進行預對準(Pre-Alignment)(S3)。預對準係使基板W1與基板W2之相對XY位置大致吻合之對準。例如,如圖8A所示,基板貼合裝置1利用吸附平台10中之N1
個拍攝元件拍攝基板W2上之N1
個基準標記,根據基板W2之XY位置之目標位置算出大概之偏移ΔP12
,並利用驅動機構24於XY方向驅動吸附平台20以修正偏移ΔP12
。基板貼合裝置1利用吸附平台20中之N1
個拍攝元件拍攝基板W1上之N1
個基準標記,根據基板W1之XY位置之目標位置算出大概之偏移ΔP11
,並利用驅動機構14於XY方向驅動吸附平台10以修正偏移ΔP11
。
再者,基板貼合裝置1亦可藉由相互拍攝吸附平台10、20上之基準標記並使位置對準來進行預對準。
基板貼合裝置1對基板W1及基板W2進行精細對準(Fine-Alignment)(S4)。精細對準係以藉由預對準得以吻合之位置為基礎,使基板W1與基板W2之相對XY位置精密吻合之對準。例如,如圖8A所示,基板貼合裝置1利用吸附平台10中之N2
(>N1
)個拍攝元件拍攝基板W2上之N2
個基準標記,根據基板W2之XY位置之目標位置算出精密之偏移ΔP22
,並利用驅動機構24於XY方向驅動吸附平台20以修正偏移ΔP22
。基板貼合裝置1利用吸附平台20中之N2
個拍攝元件拍攝基板W1上之N2
個基準標記,根據基板W1之XY位置之目標位置算出精密之偏移ΔP21
,並利用驅動機構14於XY方向驅動吸附平台10以修正偏移ΔP21
。
再者,基板貼合裝置1亦可藉由相互拍攝吸附平台10、20上之基準標記並使位置對準來進行精細對準。又,於基板W1及基板W2之偏移量超過能加以精細對準之量之情形時,可返回處理S3,自預對準重新開始,亦可返回處理S1,自基板W1及基板W2之搬入重新開始。
基板貼合裝置1使上下之吸附平台10、20相對接近。例如,基板貼合裝置1進行上側之吸附平台10之下降(Upper-Stage move)(S5)。如圖8B所示,基板貼合裝置1於將平台基座21之位置固定之狀態下,利用驅動機構14使平台基座11向-Z方向移動。藉此,基板貼合裝置1於Z方向上使吸附平台10向吸附平台20接近。基板貼合裝置1於上下之基板W1、W2即將接觸之前,控制驅動機構14,使平台基座11之下降減速。於確認上下之基板W1、W2已較輕接觸於上下之電磁力產生部12、22(利用壓力感測器進行確認,或自側面藉由相機等進行確認)之後,將上側之吸附平台10之下降鎖解除。藉此,如圖9A所示,形成上側之吸附平台10之自重對上下之基板W1、W2僅施加了相對較小之壓力之狀態。此處,要將基板貼合裝置1之內部減壓。藉由將基板貼合裝置1之內部減壓,能將基板W1、W2間之多餘氣體預先去除。即,藉由進行基板貼合裝置1內之減壓處理,能最大程度地抑制基板W1、W2間夾帶空氣(空隙不良、貼附不良)。
基板貼合裝置1使上下之電磁力產生部12、22之中央部選擇性地產生電磁力(Electromagnet-ON)(S6)。如圖9B所示,基板貼合裝置1對屬於中央附近之區域R1(參照圖3)之電磁元件12a、22a選擇性地供給控制電流。此時,基板貼合裝置1以使相互對向之電磁元件12a、22a之加壓面側成為不同極之方式,控制各控制電流之方向。又,基板貼合裝置1以使對於上下之基板W1、W2之加壓力成為適當大小之方式,控制各自之控制電流之大小。藉此,基板貼合裝置1於區域R1中,自電磁元件12a、22a對上下之基板W1、W2作用加壓力,而使上下之基板W1、W2相互接觸。
基板貼合裝置1使上下之電磁力產生部12、22中產生電磁力之區域逐漸擴大(Expansion)(S7)。基板貼合裝置1使複數個電磁元件12a-1~12a-n、22a-1~22a-n中產生電磁力之電磁元件12a、22a之個數自中央部之電磁元件起呈同心圓狀逐漸增加。
如圖10A所示,基板貼合裝置1對屬於區域R2(參照圖3)之電磁元件12a、22a選擇性地供給控制電流。藉此,基板貼合裝置1使上側之基板W1與下側之基板W2之接觸端從與區域R1對應之位置向與區域R2對應之位置推進。且,基板貼合裝置1對屬於區域R3(參照圖3)之電磁元件12a、22a選擇性地供給控制電流。藉此,基板貼合裝置1使上側之基板W1與下側之基板W2之接觸端從與區域R2對應之位置向與區域R3對應之位置推進。
如圖10B所示,基板貼合裝置1對屬於區域R4(參照圖3)之電磁元件12a、22a選擇性地供給控制電流。藉此,基板貼合裝置1使上側之基板W1與下側之基板W2之接觸端從與區域R3對應之位置向與區域R4對應之位置推進。然後,基板貼合裝置1對屬於區域R5(參照圖3)之電磁元件12a、22a選擇性地供給控制電流。藉此,基板貼合裝置1使上側之基板W1與下側之基板W2之接觸端從與區域R4對應之位置向與區域R5對應之位置推進。
如圖11A所示,基板貼合裝置1對屬於區域R6(參照圖3)之電磁元件12a、22a選擇性地供給控制電流。藉此,基板貼合裝置1使上側之基板W1與下側之基板W2之接觸端從與區域R5對應之位置向與區域R6對應之位置推進。藉此,形成基板W1與基板W2貼合之積層基板SW。
基板貼合裝置1於達到指定壓力之後,使上下之電磁力產生部12、22產生電磁力之動作解除(Electromagnet-Off)(S8)。如圖11B所示,基板貼合裝置1停止對所有的電磁元件12a、22a供給控制電流。藉此,使上下之電磁力產生部12、22停止產生電磁力。
基板貼合裝置1進行積層基板SW對吸附平台10之解除吸附(Upper-Stage wafer Unchucking)(S9)。如圖11B所示,控制器60控制吸附部13(參照圖2),解除吸附部13將積層基板SW對主面11a之吸附。
基板貼合裝置1使上下之吸附平台10、20相對遠離。例如,基板貼合裝置1進行上側之吸附平台10之上升(Upper-Stage move)(S10)。如圖11B所示,基板貼合裝置1於將平台基座21之位置固定之狀態下,利用驅動機構14使平台基座11向+Z方向移動。藉此,基板貼合裝置1於Z方向上使吸附平台10自吸附平台20遠離。
基板貼合裝置1進行積層基板SW對吸附平台20之解除吸附(Lower-Stage wafer Unchucking)(S11)。如圖12A所示,控制器60控制吸附部23(參照圖2),解除吸附部23將積層基板SW對主面21a之吸附。
基板貼合裝置1進行積層基板SW之搬出(Wafer Unload)(S12)。例如,如圖12A所示,搬送機器人2a使臂於+Y方向移動,使臂位於Z方向上之吸附平台10與吸附平台20之間。搬送機器人2a使臂向-Z方向移動,並將積層基板SW吸附於臂之-Z側之面上。
如圖12B所示,搬送機器人2a使臂向+Z方向稍微移動之後,使臂向-Y方向移動,而使積層基板SW自Z方向上之吸附平台10與吸附平台20之間之位置退避。搬送機器人2a將積層基板SW向搬送機器人2c遞交。搬送機器人2c將積層基板SW向搬入搬出部3收納。積層基板SW會被其他搬送系統向下一工序之裝置搬送。
基板貼合裝置1對吸附平台10、20進行清潔及消磁(Stage Cleaning Degaussing)(S13)。例如,如圖13A所示,基板貼合裝置1對電磁元件12a供給方向與貼合時相反之控制電流,使電磁元件12a以與貼合時(參照圖11A)相反之極性產生磁力。藉此,於吸附平台10存在磁化部分之情形時,能將該部分消磁。同樣地,基板貼合裝置1對電磁元件22a供給方向與貼合時相反之控制電流,使電磁元件22a以與貼合時(參照圖11A)相反之極性產生磁力。藉此,於吸附平台20存在磁化部分之情形時,能將該部分消磁。
如圖13B所示,基板貼合裝置1停止所有對電磁元件12a、22a之控制電流供給。藉此,使各電磁元件12a、22a停止產生電磁力。此時,由於吸附平台10及吸附平台20已被消磁,故而能容易地將磁性灰塵MD去除。
然後,基板貼合裝置1搬入下一組基板W1'、W2',對基板W1'、W2'進行S1以後之處理。
如上上述,於本實施方式中,基板貼合裝置1中,將能二維調整磁力之電磁力產生部12、22分別設置於上下之吸附平台10、20。藉此,能實現減少磁性灰塵且追隨基板表面之構形之貼合。
再者,電磁力產生部12、22之複數個電磁元件12a、22a只要二維排列於吸附平台10、20之平台基座11、21之主面11a、21a即可,其等之排列並不限定為放射狀之排列。例如,電磁力產生部12i、22i之複數個電磁元件12ai、22ai亦可如圖14所示,為呈同心圓狀排列於吸附平台10、20之平台基座11、21之主面11a、21a之構成。圖14係表示實施方式之第1變化例中之吸附平台10、20之構成之圖。電磁元件12ai-1、22ai-1可視為與實施方式之區域R1(參照圖3)對應,由複數個電磁元件一體化而成之元件。電磁元件12ai-1、22ai-1於XY俯視下,具有大致圓形。電磁元件12ai-2、22ai-2可視為以與電磁元件12ai-1、22ai-1分隔開來且呈圓環狀包圍電磁元件12ai-1、22ai-1之方式配置,與實施方式之區域R2(參照圖3)對應,由複數個電磁元件一體化而成之元件。電磁元件12ai-6、22ai-6可視為以與電磁元件12ai-5、22ai-5分隔開來且呈圓環狀包圍電磁元件12ai-5、22ai-5之方式配置,與實施方式之區域R6(參照圖3)對應,由複數個電磁元件一體化而成之元件。
如此,根據複數個電磁元件12ai、22ai呈同心圓狀排列於平台基座11、21之主面11a、21a之構成,控制器60容易使上下之基板相互以中央部接觸且使上下之基板之接觸端自中央部向外側推進。
或者,基板貼合裝置1j亦可如圖15所示,彈性構件16j、26j覆蓋電磁力產生部12、22之複數個電磁元件12a、22a。圖15係表示實施方式之第2變化例之基板貼合裝置1j之構成之圖。
就要點而言,彈性構件16j沿著XY方向延伸而收容於平台基座11之凹陷部,並且以平面方式覆蓋電磁力產生部12之複數個電磁元件12a-1~12a-n。彈性構件16j亦可進而覆蓋複數個電磁元件12a-1~12a-n中最外側之電磁元件12a之側面之一部分。彈性構件16j例如可由橡膠等彈性體形成。彈性構件16j之表面構成吸附平台10之表面。複數個電磁元件12a-1~12a-n亦可分別將緩衝構件12a3及彈性構件12a8(參照圖4A)省略,而將殼體12a1之加壓面12a6固定於彈性構件16j之背面。藉此,控制器60對各電磁元件12a-1~12a-n之Z位移相互獨立地加以控制,從而能使吸附平台10j之表面形狀任意地變化。
就要點而言,彈性構件26j沿著XY方向延伸而收容於平台基座21之凹陷部,並且以平面方式覆蓋電磁力產生部22之複數個電磁元件22a-1~22a-n。彈性構件26j亦可進而覆蓋複數個電磁元件22a-1~22a-n中最外側之電磁元件22a之側面之一部分。彈性構件26j例如可由橡膠等彈性體形成。彈性構件26j亦可一體設置,而以平面方式覆蓋複數個電磁元件22a-1~22a-n。彈性構件26j之表面構成吸附平台20之表面。複數個電磁元件22a-1~22a-n亦可分別將緩衝構件22a3及彈性構件22a8(參照圖4A)省略,而將殼體22a1之加壓面22a6固定於彈性構件26j之背面。藉此,控制器60對各電磁元件22a-1~22a-n之Z位移相互獨立地加以控制,從而能使吸附平台20j之表面形狀任意地變化。
控制器60亦可隨著時間之經過,使複數個電磁元件12a-1~12a-n、22a-1~22a-n中產生電磁力之電磁元件12a、22a之個數自中央部之電磁元件開始呈同心圓狀逐漸增加,並且二維改變向電磁元件12a、22a供給之控制電流量。
例如,控制器60使產生電磁力之電磁元件12a、22a之區域按圖16所示之區域R1→區域R21、R22、R23、R24→區域R31、R32、R33、R34→區域R41、R42、R43、R44逐漸擴展。圖16係表示實施方式之第2變化例中之吸附平台10j、20j之構成之圖,示出了將彈性構件16j、26j卸除後之狀態之平面構成。此時,可於區域R21、R22、R23、R24之間改變向電磁元件12a、22a供給之控制電流量,亦可於區域R31、R32、R33、R34之間改變向電磁元件12a、22a供給之控制電流量,亦可於區域R41、R42、R43、R44之間改變向電磁元件12a、22a供給之控制電流量。
例如,基板貼合裝置1j亦可如圖17A~圖19B所示,進行使吸附平台10j、20j之表面形狀根據基板之背面形狀而變化之動作。圖17A~圖19B係表示基板貼合裝置1j之動作之圖。
基板貼合裝置1j利用吸附平台10吸附基板W1,利用吸附平台20吸附積層基板SW'。積層基板SW’係由複數個基板W6~W2依次積層而構成。基板貼合裝置1j使上側之吸附平台10下降,於確認上下之基板W1、積層基板SW'已較輕接觸於上下之彈性構件16j、26j之後,將上側之吸附平台10之下降鎖解除。藉此,如圖17A所示,形成上側之吸附平台10j之自重對上下之基板W1、積層基板SW'僅施加了相對較小之壓力之狀態。
如圖17B所示,基板貼合裝置1j對屬於中央附近之區域R1(參照圖16)之電磁元件12a、22a選擇性地供給控制電流。此時,基板貼合裝置1j以使相互對向之電磁元件12a、22a之加壓面側成為不同極之方式,控制各控制電流之方向。又,基板貼合裝置1j以使對上下之基板W1、積層基板SW'作用之加壓力成為適當大小之方式,控制各控制電流之大小。藉此,基板貼合裝置1j於區域R1中,自電磁元件12a、22a經由彈性構件16j、26j對上下之基板W1、積層基板SW'作用加壓力,而使上下之基板W1、積層基板SW'相互接觸。
此時,彈性構件16j、26j於區域R1中,以追隨基板W1、積層基板SW'之背面形狀之方式變形。藉此,基板貼合裝置1j中,上下之吸附平台10j、20j能容易地增加加壓時基板W1、積層基板SW'之接觸面積,從而能實現加壓時背面形狀內之應力分散。
如圖18A所示,基板貼合裝置1j對屬於區域R21、R22、R23、R24(參照圖16)之電磁元件12a、22a選擇性地供給控制電流。
此時,基板貼合裝置1j亦可根據基板W1、積層基板SW'之背面形狀,於區域R21、R22、R23、R24之間改變向電磁元件12a、22a供給之控制電流量。藉此,彈性構件16j、26j於區域R21、R22、R23、R24中,以追隨基板W1、積層基板SW'之背面形狀之方式變形。藉此,基板貼合裝置1j能一面使上側之基板W1與下側之積層基板SW'之接觸端自與區域R1對應之位置向與區域R21~R24對應之位置推進,一面容易地增加加壓時基板W1、積層基板SW'之接觸面積,從而能實現加壓時背面形狀內之應力分散。
如圖18B所示,基板貼合裝置1j對屬於區域R31、R32、R33、R34(參照圖16)之電磁元件12a、22a選擇性地供給控制電流。
此時,基板貼合裝置1j亦可根據基板W1、積層基板SW'之背面形狀,於區域R31、R32、R33、R34之間改變向電磁元件12a、22a供給之控制電流量。藉此,彈性構件16j、26j於區域R31、R32、R33、R34中,以追隨基板W1、積層基板SW'之背面形狀之方式變形。藉此,基板貼合裝置1j能一面使上側之基板W1與下側之積層基板SW'之接觸端自與區域R21~R24對應之位置向與區域R31~R34對應之位置推進,一面容易地增加加壓時上下之基板W1、積層基板SW'之接觸面積,從而能實現加壓時背面形狀內之應力分散。
如圖19A所示,基板貼合裝置1j對屬於區域R41、R42、R43、R44(參照圖16)之電磁元件12a、22a選擇性地供給控制電流。
此時,基板貼合裝置1j亦可根據基板W1、積層基板SW'之背面形狀,於區域R41、R42、R43、R44之間改變向電磁元件12a、22a供給之控制電流量。藉此,彈性構件16j、26j於區域R41、R42、R43、R44中,以追隨基板W1、積層基板SW'之背面形狀之方式變形。藉此,基板貼合裝置1j能一面使上側之基板W1與下側之積層基板SW'之接觸端自與區域R31~R34對應之位置向與區域R41~R44對應之位置推進,一面容易地增加加壓時基板W1、積層基板SW'之接觸面積,從而能實現加壓部位處之應力分散。藉此,形成基板W1與積層基板SW'貼合之積層基板SW''。
如圖19B所示,控制器60控制吸附部13(參照圖2),解除吸附部13將積層基板SW''吸附於主面上之狀態。基板貼合裝置1j於將平台基座21之位置固定之狀態下,利用驅動機構14使平台基座11向+Z方向移動。藉此,基板貼合裝置1j於Z方向上使吸附平台10j自吸附平台20j遠離。
如此,根據彈性構件16j、26j覆蓋電磁力產生部12、22之複數個電磁元件12a、22a之構成,能自上下之電磁力產生部12、22經由彈性構件16j、26j對應予以貼合之基板間作用加壓力。藉此,能實現更追隨基板表面之構形之貼合,且能實現貼合時加壓部位處之應力分散,從而能防止應予以貼合之基板破損。
或者,電磁力產生部12k、22k之複數個電磁元件12ai、22ai亦可如圖20所示,為呈同心圓狀排列於吸附平台10k、20k之主面11a、21a且經二維分割之構成。圖20係表示實施方式之第3變化例中之吸附平台10k、20k之構成之圖,示出了將彈性構件16j、26j卸除後之狀態之平面構成。電磁元件12ak-1、22ak-1可視為與第2變化例之區域R1(參照圖16)對應,由複數個電磁元件一體化而成之元件。電磁元件12ak-1、22ak-1於XY俯視下,具有大致圓形。電磁元件12ak-21~12ak-28、22ak-21~22ak-28可視為以與電磁元件12ak-1、22ak-1分隔開來且呈圓環狀包圍電磁元件12ak-1、22ak-1之方式配置,與第2變化例之區域R21~R24(參照圖16)對應,由複數個電磁元件一體化而成之元件。電磁元件12ak-21、12ak-25、22ak-21、22ak-25與區域R21對應,電磁元件12ak-22、12ak-26、22ak-22、22ak-26與區域R22對應,電磁元件12ak-23、12ak-27、22ak-23、22ak-27與區域R23對應,電磁元件12ak-24、12ak-28、22ak-24、22ak-28與區域R24對應。…電磁元件12ak-41~12ak-44、22ak-41~22ak-44可視為以與電磁元件12ak-31~12ak-38、22ak-31~22ak-38分隔開來且呈圓環狀包圍電磁元件12ak-31~12ak-38、22ak-31~22ak-38之方式配置,與第2變化例之區域R41~R44(參照圖16)對應,由複數個電磁元件一體化而成之元件。電磁元件12ak-41、22ak-41與區域R41對應,電磁元件12ak-42、22ak-42與區域R42對應,電磁元件12ak-43、22ak-43與區域R43對應,電磁元件12ak-44、22ak-44與區域R44對應。
如此,根據複數個電磁元件12ak、22ak呈同心圓狀排列於平台基座11、21之主面11a、21a且經二維分割之構成,控制器60能一面使上下之基板相互以中央部接觸並使上下之基板之接觸端自中央部向外側推進,一面容易地增加加壓時上下之基板之接觸面積,從而能容易地實現加壓部位處之應力分散。
或者,於基板貼合裝置1j中,控制器60亦可如圖21所示,控制電磁力產生部12、22,使上下對向之電磁元件12a、22a成為不同極之區域與成為同極之區域混合存在。圖21係表示實施方式之第4變化例之基板貼合裝置1j之動作之圖。
例如,於上下之基板W21、W22之背面形狀呈碗狀翹曲,從而高低差較大之情形時,控制器60於內側之區域Rin中以使上下對向之電磁元件12a、22a成為不同極之方式進行控制,於外側之區域Rin中以使上下對向之電磁元件12a、22a成為同極之方式進行控制。藉此,於內側之區域Rin中,對向之電磁元件12a、22a相互吸引,相對於此,於外側之區域Rout中,對向之電磁元件12a、22a相互排斥,故而能使彈性構件16j、26j追隨碗狀之翹曲形狀,以較大之高低差變形。因此,於上下之基板之背面形狀為高低差較大之形狀之情形時,能實現追隨上下之基板之背面形狀之貼合動作。
(附記1)
一種半導體裝置之製造方法,其包含如下步驟:
於吸附有第1半導體基板之第1吸附平台中對第1電磁力產生部供給電流而產生電磁力,並且於吸附有第2半導體基板之第2吸附平台中對第2電磁力產生部供給電流而產生電磁力;以及
使上述第1吸附平台中對上述第1電磁力產生部供給電流而產生電磁力之區域擴大,且使上述第2平台中對上述第2電磁力產生部供給電流而產生電磁力之區域擴大;
進而包含如下步驟:
將上述第1半導體基板及上述第2半導體基板搬入基板貼合裝置;
使上述第1吸附平台吸附上述第1半導體基板,使上述第2吸附平台吸附上述第2半導體基板;
使用第1拍攝元件拍攝上述第1半導體基板之基準標記,使用第2拍攝元件拍攝上述第2半導體基板之基準標記,並進行上述第1半導體基板與上述第2半導體基板之位置對準;
於使上述第1半導體基板與上述第2半導體基板相互接近之後,使上述第1吸附平台中產生電磁力之區域擴大,且使上述第2吸附平台中產生電磁力之區域擴大,將上述第1半導體基板與上述第2半導體基板貼合而形成積層基板;
將上述積層基板自上述基板貼合裝置搬出;以及
於將上述積層基板搬出之後,使上述第1吸附平台及上述第2吸附平台消磁。
(附記2)
一種半導體裝置之製造方法,其包含如下步驟:
於吸附有第1半導體基板之第1吸附平台中對第1電磁力產生部供給電流而產生電磁力,並且於吸附有第2半導體基板之第2吸附平台中對第2電磁力產生部供給電流而產生電磁力;以及
使上述第1吸附平台中對上述第1電磁力產生部供給電流而產生電磁力之區域擴大,且使上述第2平台中對上述第2電磁力產生部供給電流而產生電磁力之區域擴大;
進而包含如下步驟:
將上述第1半導體基板及上述第2半導體基板搬入基板貼合裝置;
使上述第1吸附平台吸附上述第1半導體基板,使上述第2吸附平台吸附上述第2半導體基板;
使用第1拍攝元件拍攝上述第1半導體基板之基準標記,使用第2拍攝元件拍攝上述第2半導體基板之基準標記,並進行上述第1半導體基板與上述第2半導體基板之位置對準;
於使上述第1半導體基板與上述第2半導體基板相互接近之後,將上述基板貼合裝置內減壓;
使上述第1吸附平台中產生電磁力之區域擴大,且使上述第2吸附平台中產生電磁力之區域擴大,將上述第1半導體基板與上述第2半導體基板貼合而形成積層基板;以及
將上述積層基板自上述基板貼合裝置搬出。
對本發明之幾個實施方式進行了說明,但這些實施方式係作為示例而提出者,並不欲限定發明之範圍。這些新穎之實施方式能以其他各種方式實施,於不脫離發明主旨之範圍內,能進行各種省略、置換、變更。這些實施方式及其變化包含於發明之範圍及主旨中,並且包含於申請專利範圍所記載之發明及其等同之範圍中。
[相關申請案]
本申請案享有2020年9月8日申請之日本專利申請案2020-150678號之優先權之利益,該日本專利申請案之所有內容被引用於本申請案中。
1:基板貼合裝置
1-1~1-4:基板貼合裝置
1j:基板貼合裝置
2:搬送系統
2a:搬送機器人
2b:搬送軌道
2c:搬送機器人
2d:搬送軌道
3:搬入搬出部
3a~3d:載置台
10:吸附平台
10j:吸附平台
10k:吸附平台
11:平台基座
11a:主面
11b:內壁面
12:電磁力產生部
12a:電磁元件
12a-1~12a-n:電磁元件
12a1:殼體
12a2:線圈
12a3:緩衝構件
12a4:導線
12a5:導線
12a6:加壓面
12a7:與加壓面12a6為相反側之面
12a8:彈性構件
12i:電磁力產生部
12ai-1:電磁元件
12ai-2:電磁元件
12ai-5:電磁元件
12ai-6:電磁元件
12ak-1:電磁元件
12ak-21~12ak-28:電磁元件
12ak-31~12ak-38:電磁元件
12ak-41~12ak-44:電磁元件
12k:電磁力產生部
13:吸附部
13a-1~13a-k:吸附孔
13b:真空配管
13c:真空泵
14:驅動機構
15:拍攝部
15a-1~15a-k:拍攝元件
16j:彈性構件
20:吸附平台
20k:吸附平台
20j:吸附平台
21:平台基座
21a:主面
22:電磁力產生部
22a:電磁元件
22a-1~22a-n:電磁元件
22ak-1:電磁元件
22ak-21~22ak-28:電磁元件
22ak-31~22ak-38:電磁元件
22ak-41~22ak-44:電磁元件
22i:電磁力產生部
22ai-1:電磁元件
22ai-2:電磁元件
22ai-5:電磁元件
22ai-6:電磁元件
22k:電磁力產生部
23:吸附部
23a-1~23a-k:吸附孔
23b:真空配管
23c:真空泵
24:驅動機構
25:拍攝部
25a-1~25a-k:拍攝元件
26j:彈性構件
60:控制器
MD:磁性灰塵
R1:區域
R2:區域
R3:區域
R4:區域
R5:區域
R6:區域
R21:區域
R22:區域
R23:區域
R24:區域
R31:區域
R32:區域
R33:區域
R34:區域
R41:區域
R42:區域
R43:區域
R44:區域
Rin:內側之區域
Rout:外側之區域
SW:積層基板
SW':積層基板
SW'':積層基板
W1:基板
W2~W6:基板
W21:基板
W22:基板
圖1係表示應用實施方式之基板貼合裝置之製造系統之構成之圖。
圖2係表示實施方式之基板貼合裝置之構成之圖。
圖3係表示實施方式中之吸附平台之構成之圖。
圖4A~圖4D係表示實施方式中之電磁元件之構成之圖。
圖5係表示實施方式之基板貼合裝置之動作之流程圖。
圖6A及圖6B係表示實施方式之基板貼合裝置之動作之圖。
圖7A及圖7B係表示實施方式之基板貼合裝置之動作之圖。
圖8A及圖8B係表示實施方式之基板貼合裝置之動作之圖。
圖9A及圖9B係表示實施方式之基板貼合裝置之動作之圖。
圖10A及圖10B係表示實施方式之基板貼合裝置之動作之圖。
圖11A及圖11B係表示實施方式之基板貼合裝置之動作之圖。
圖12A及圖12B係表示實施方式之基板貼合裝置之動作之圖。
圖13A及圖13B係表示實施方式之基板貼合裝置之動作之圖。
圖14係表示實施方式之第1變化例中之吸附平台之構成之圖。
圖15係表示實施方式之第2變化例之基板貼合裝置之構成之圖。
圖16係表示實施方式之第2變化例中之吸附平台之構成之圖。
圖17A及圖17B係表示實施方式之第2變化例之基板貼合裝置之動作之圖。
圖18A及圖18B係表示實施方式之第2變化例之基板貼合裝置之動作之圖。
圖19A及圖19B係表示實施方式之第2變化例之基板貼合裝置之動作之圖。
圖20係表示實施方式之第3變化例中之吸附平台之構成之圖。
圖21係表示實施方式之第4變化例之基板貼合裝置之動作之圖。
1:基板貼合裝置
10:吸附平台
11:平台基座
11a:主面
12:電磁力產生部
12a-1~12a-n:電磁元件
13:吸附部
13a-1~13a-k:吸附孔
13b:真空配管
13c:真空泵
14:驅動機構
15:拍攝部
15a-1~15a-k:拍攝元件
20:吸附平台
21:平台基座
21a:主面
22:電磁力產生部
22a-1~22a-n:電磁元件
23:吸附部
23a-1~23a-k:吸附孔
23b:真空配管
23c:真空泵
24:驅動機構
25:拍攝部
25a-1~25a-k:拍攝元件
60:控制器
Claims (16)
- 一種基板貼合裝置,其具備:第1吸附平台,其具有第1電磁力產生部,能吸附第1基板;及第2吸附平台,其具有與上述第1電磁力產生部對向之第2電磁力產生部,能吸附第2基板;且上述第1吸附平台具有第1吸附面,上述第1電磁力產生部包含排列於與上述第1吸附面平行之方向之複數個第1電磁元件;上述第2吸附平台具有第2吸附面,上述第2電磁力產生部包含排列於與上述第2吸附面平行之方向之複數個第2電磁元件;上述第1吸附平台進而具有:第1吸附部,其配置於上述複數個第1電磁元件之間,能吸附上述第1基板;及第1拍攝元件,其配置於上述複數個第1電磁元件之間,拍攝上述第1基板上之基準標記;上述第2吸附平台進而具有:第2吸附部,其配置於上述複數個第2電磁元件之間,能吸附上述第2基板;及第2拍攝元件,其配置於上述複數個第2電磁元件之間,拍攝上述第2基板上之基準標記。
- 一種基板貼合裝置,其具備:第1吸附平台,其具有第1電磁力產生部,能吸附第1基板;及 第2吸附平台,其具有與上述第1電磁力產生部對向之第2電磁力產生部,能吸附第2基板;且上述第1吸附平台具有第1吸附面,上述第1電磁力產生部包含排列於與上述第1吸附面平行之方向之複數個第1電磁元件;上述第2吸附平台具有第2吸附面,上述第2電磁力產生部包含排列於與上述第2吸附面平行之方向之複數個第2電磁元件;上述第1吸附平台進而具有:第1吸附部,其配置於上述複數個第1電磁元件之間,能吸附上述第1基板;上述第2吸附平台進而具有:第2吸附部,其配置於上述複數個第2電磁元件之間,能吸附上述第2基板;上述基板貼合裝置進而具備:控制器,其對上述複數個第1電磁元件中之1個第1電磁元件、及上述複數個第1電磁元件中之與上述1個第1電磁元件不同之至少1個第1電磁元件相互獨立地進行控制,且對上述複數個第2電磁元件中之1個第2電磁元件、及上述複數個第2電磁元件中之與上述1個第2電磁元件不同之至少1個第2電磁元件相互獨立地進行控制。
- 如請求項2之基板貼合裝置,其中上述控制器以使上述複數個第1電磁元件中相鄰之2個相互成為不同極之方式進行控制,且以使上述複數個第2電磁元件中相鄰之2個相互成為不同極之方式進行控制。
- 如請求項2之基板貼合裝置,其中上述控制器使相互對向之上述複數個第1電磁元件中之1個與上述複數個第2電磁元件中之1個彼此以相反之極性產生電磁力,且使上述複數個第1電磁元件中產生電磁力之電磁元件之個數隨著時間經過而增加,使上述複數個第2電磁元件中產生電磁力之電磁元件之個數隨著時間經過而增加。
- 如請求項2之基板貼合裝置,其中上述控制器使相互對向之上述複數個第1電磁元件中之1個與上述複數個第2電磁元件中之1個彼此以相反之極性產生電磁力,且使上述複數個第1電磁元件中產生電磁力之電磁元件隨著時間經過自上述第1吸附面中心向上述第1吸附面外周區域擴大,使上述複數個第2電磁元件中產生電磁力之電磁元件隨著時間經過自上述第2吸附面中心向上述第2吸附面外周區域擴大。
- 如請求項2之基板貼合裝置,其中上述控制器使相互對向之上述複數個第1電磁元件中之1個與上述複數個第2電磁元件中之1個彼此以相反之極性產生電磁力。
- 如請求項2之基板貼合裝置,其中上述控制器使相互對向之上述複數個第1電磁元件中之1個與上述複數個第2電磁元件中之1個彼此以相同之極性產生電磁力。
- 一種基板貼合裝置,其具備:第1吸附平台,其具有第1電磁力產生部,能吸附第1基板;及第2吸附平台,其具有與上述第1電磁力產生部對向之第2電磁力產生部,能吸附第2基板;且上述第1吸附平台進而具有於上述第1基板側覆蓋上述第1電磁力產生部之第1彈性構件,上述第2吸附平台進而具有於上述第2基板側覆蓋上述第2電磁力產生部之第2彈性構件。
- 一種基板貼合裝置,其具備:第1吸附平台,其具有第1電磁力產生部,能吸附第1基板;及第2吸附平台,其具有與上述第1電磁力產生部對向之第2電磁力產生部,能吸附第2基板;且上述第1吸附平台具有第1吸附面,上述第1電磁力產生部包含排列於與上述第1吸附面平行之方向之複數個第1電磁元件;上述第1吸附平台進而具有於上述第1基板側覆蓋上述複數個第1電磁元件的一體之第1彈性構件;上述第2吸附平台具有第2吸附面,上述第2電磁力產生部包含排列於與上述第2吸附面平行之方向之複數個第2電磁元件;上述第2吸附平台進而具有於上述第2基板側覆蓋上述複數個第2電磁元件的一體之第2彈性構件。
- 如請求項9之基板貼合裝置,其進而具備 控制器,其根據上述第1基板之背面形狀,對上述複數個第1電磁元件相互獨立地進行控制,且根據上述第2基板之背面形狀,對上述複數個第2電磁元件相互獨立地進行控制。
- 如請求項10之基板貼合裝置,其中上述控制器使相互對向之上述複數個第1電磁元件中之1個與上述複數個第2電磁元件中之1個彼此以相反之極性產生電磁力。
- 如請求項10之基板貼合裝置,其中上述控制器使相互對向之上述複數個第1電磁元件中之1個與上述複數個第2電磁元件中之1個彼此以相同之極性產生電磁力。
- 如請求項9之基板貼合裝置,其中上述複數個第1電磁元件相互獨立地受控制,上述複數個第2電磁元件相互獨立地受控制,且使上述複數個第1電磁元件中被供給電流之第1電磁元件產生電磁力,使上述複數個第2電磁元件中受到電流供給之第2電磁元件產生電磁力。
- 如請求項1、8、9之任一項之基板貼合裝置,其進而具備對上述第1電磁力產生部與上述第2電磁力產生部相互獨立地進行控制之控制器。
- 一種半導體裝置之製造方法,其包含如下步驟:於吸附有第1半導體基板之第1吸附平台中對第1電磁力產生部供給電流而產生電磁力,並且於吸附有第2半導體基板之第2吸附平台中對第2電磁力產生部供給電流而產生與第1電磁力產生部之間相互吸引之電磁力;使上述第1吸附平台中對上述第1電磁力產生部供給電流而產生電磁力之區域擴大,且使上述第2吸附平台中對上述第2電磁力產生部供給電流而產生電磁力之區域擴大;將上述第1半導體基板及上述第2半導體基板搬入基板貼合裝置;使上述第1吸附平台吸附上述第1半導體基板,使上述第2吸附平台吸附上述第2半導體基板;使用第1拍攝元件拍攝上述第1半導體基板之基準標記,使用第2拍攝元件拍攝上述第2半導體基板之基準標記,並進行上述第1半導體基板與上述第2半導體基板之位置對準;於使上述第1半導體基板與上述第2半導體基板相互接近之後,將上述第1吸附平台中產生電磁力之區域擴大,且將上述第2吸附平台中產生電磁力之區域擴大,將上述第1半導體基板與上述第2半導體基板貼合而形成積層基板;及將上述積層基板自上述基板貼合裝置搬出。
- 如請求項15上述之半導體裝置之製造方法,其中於上述第1吸附平台及上述第2吸附平台產生電磁力之步驟包含:於上述第1半導體基板之中央部及上述第2半導體基板之中央部開始 產生電磁力;使於上述第1吸附平台及上述第2吸附平台產生電磁力之區域擴大之步驟包含:使產生電磁力之區域自上述第1半導體基板之中央部及上述第2半導體基板之中央部分別向外側擴大。
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JP6097229B2 (ja) | 2014-01-31 | 2017-03-15 | 東京エレクトロン株式会社 | 接合装置、接合システムおよび接合方法 |
KR20230009995A (ko) | 2014-12-10 | 2023-01-17 | 가부시키가이샤 니콘 | 기판 겹침 장치 및 기판 겹침 방법 |
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- 2021-06-14 US US17/346,743 patent/US12002700B2/en active Active
- 2021-07-30 TW TW110128106A patent/TWI836247B/zh active
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TW200526801A (en) * | 2003-12-20 | 2005-08-16 | Aixtron Ag | Method and device for handling a dielectric substrate and a dielectric mask |
JP2013232663A (ja) * | 2013-06-20 | 2013-11-14 | Nikon Corp | 基板ホルダ装置及び基板張り合わせ装置 |
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