TWI835441B - Crucible for evaporation, evaporation source and evaporation device - Google Patents

Crucible for evaporation, evaporation source and evaporation device Download PDF

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TWI835441B
TWI835441B TW111145925A TW111145925A TWI835441B TW I835441 B TWI835441 B TW I835441B TW 111145925 A TW111145925 A TW 111145925A TW 111145925 A TW111145925 A TW 111145925A TW I835441 B TWI835441 B TW I835441B
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vapor deposition
crucible
opening side
opening
stainless steel
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TW111145925A
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TW202323558A (en
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末永真吾
濱永教彰
政田英昭
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日商長州産業股份有限公司
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Abstract

本發明提供蒸鍍用坩堝以及具備這種蒸鍍用坩堝的蒸鍍源和蒸鍍裝置,可以抑制蒸鍍材料向開口部及其周邊析出,從而使蒸鍍材料穩定擴散。所述蒸鍍用坩堝具有開口部並利用感應加熱進行加熱,開口部側部分由透過感應加熱引起的溫度上升比其他部分大的材料形成。The present invention provides a crucible for vapor deposition, a vapor deposition source and a vapor deposition device equipped with the crucible for vapor deposition, which can suppress the deposition of the vapor deposition material into the opening and its surroundings, thereby stably diffusing the vapor deposition material. The vapor deposition crucible has an opening and is heated by induction heating, and the opening side portion is made of a material whose temperature rise due to induction heating is larger than that of other parts.

Description

蒸鍍用坩堝、蒸鍍源和蒸鍍裝置Crucible for evaporation, evaporation source and evaporation device

本發明涉及蒸鍍用坩堝、蒸鍍源和蒸鍍裝置。The present invention relates to a crucible for vapor deposition, a vapor deposition source and a vapor deposition device.

顯示面板、太陽能電池等的金屬電極佈線、有機場致發光(EL)層、半導體層、其他有機材料薄膜和無機材料薄膜等,有時透過真空蒸鍍法等的蒸鍍形成。進行這種蒸鍍的蒸鍍裝置,通常包括在常溫下對固體的蒸鍍材料進行加熱並將汽化的蒸鍍材料朝向基板表面噴射的蒸鍍源(也稱蒸發源等),以及保持基板的基板保持部等。蒸鍍源具備收容蒸鍍材料的坩堝,以及對所述蒸鍍材料直接或間接加熱並使其汽化的加熱裝置。作為蒸鍍源的加熱裝置,已知使用感應加熱的裝置(參照專利文獻1、2)。與電阻加熱方式相比,感應加熱方式具有加熱效率高、熱響應性優異等優點。Metal electrode wiring, organic electroluminescence (EL) layers, semiconductor layers, other organic material films, inorganic material films, etc. of display panels, solar cells, etc. are sometimes formed by evaporation such as vacuum evaporation. A vapor deposition device that performs such vapor deposition usually includes a vapor deposition source (also called an evaporation source, etc.) that heats a solid vapor deposition material at room temperature and sprays the vaporized vapor deposition material toward the substrate surface, and a device that holds the substrate. substrate holding part, etc. The vapor deposition source includes a crucible for storing the vapor deposition material, and a heating device for directly or indirectly heating and vaporizing the vapor deposition material. As a heating device for a vapor deposition source, a device using induction heating is known (see Patent Documents 1 and 2). Compared with resistance heating, induction heating has the advantages of high heating efficiency and excellent thermal responsiveness.

現有技術文獻existing technical documents

專利文獻1:日本專利公開公報特開2011-52301號Patent document 1: Japanese Patent Publication No. 2011-52301

專利文獻2:日本專利公開公報特開2020-176298號Patent document 2: Japanese Patent Publication No. 2020-176298

可是,在採用線圈的感應加熱方式中,線圈的中心部分磁場最強,所述中心部分最容易被加熱。以覆蓋坩堝的周圍的方式配置線圈,利用感應加熱對坩堝進行加熱時,坩堝的開口部及其周邊因磁場相對較弱且開口,所以溫度相比中心部分降低。因此,坩堝內收容的蒸鍍材料透過加熱而汽化從而向坩堝外擴散時,蒸鍍材料的一部分容易在坩堝的開口部及其周邊析出。在坩堝的開口部及其周邊析出的蒸鍍材料會妨礙蒸鍍材料的擴散,從而導致堵塞。However, in the induction heating method using a coil, the magnetic field is strongest in the center part of the coil, and the center part is most easily heated. When the coil is arranged to cover the periphery of the crucible and the crucible is heated by induction heating, the temperature of the opening of the crucible and its periphery is lower than that of the center because the magnetic field is relatively weak and open. Therefore, when the vapor deposition material contained in the crucible is vaporized by heating and diffuses outside the crucible, part of the vapor deposition material is likely to precipitate at the opening of the crucible and its surroundings. The evaporation material precipitated in and around the opening of the crucible may hinder the diffusion of the evaporation material and cause clogging.

鑒於以上問題,本發明的主要目的是提供蒸鍍用坩堝以及具備這種蒸鍍用坩堝的蒸鍍源和蒸鍍裝置,可以抑制蒸鍍材料向開口部及其周邊析出,從而使蒸鍍材料穩定擴散。In view of the above problems, the main object of the present invention is to provide a crucible for vapor deposition, a vapor deposition source and a vapor deposition device equipped with the crucible for vapor deposition, which can suppress the deposition of the vapor deposition material into the opening and its surroundings, thereby making the vapor deposition material Stable diffusion.

為解決上述問題的本發明的蒸鍍用坩堝(A),是具有開口部並利用感應加熱進行加熱的蒸鍍用坩堝,開口部側部分由透過感應加熱引起的溫度上升比其他部分大的材料形成。The vapor deposition crucible (A) of the present invention that solves the above problems is a vapor deposition crucible that has an opening and is heated by induction heating. The opening side part has a greater temperature rise due to transmission induction heating than other parts. form.

為解決上述問題的其他本發明的蒸鍍用坩堝(B),是利用感應加熱進行加熱的蒸鍍用坩堝,開口部側部分由強磁性體金屬形成,其他部分由非磁性體金屬形成。Another vapor deposition crucible (B) of the present invention that solves the above problems is a vapor deposition crucible heated by induction heating. The opening side portion is formed of a ferromagnetic metal and the other portion is formed of a nonmagnetic metal.

在所述蒸鍍用坩堝(A)和蒸鍍用坩堝(B)中,優選形成上述開口部側部分的材料和形成上述其他部分的材料都是不銹鋼。In the vapor deposition crucible (A) and the vapor deposition crucible (B), it is preferable that the material forming the opening side portion and the material forming the other portion are both stainless steel.

在所述蒸鍍用坩堝(A)和蒸鍍用坩堝(B)中,優選上述開口部側部分具有細腰部。In the crucible for vapor deposition (A) and the crucible for vapor deposition (B), it is preferable that the opening side portion has a narrow waist.

為解決上述問題的另一本發明的蒸鍍源,具備所述蒸鍍用坩堝(A)或蒸鍍用坩堝(B),以及以覆蓋上述蒸鍍用坩堝(A)或蒸鍍用坩堝(B)的周圍的方式配置的線圈。In order to solve the above problem, another vapor deposition source of the present invention is provided with the crucible for vapor deposition (A) or the crucible for vapor deposition (B), and is covered with the crucible for vapor deposition (A) or the crucible for vapor deposition ( B) The coil is configured in a surrounding manner.

為解決上述問題的另一本發明是具備所述蒸鍍源的蒸鍍裝置。Another aspect of the present invention that solves the above problems is a vapor deposition device provided with the vapor deposition source.

按照本發明,可以提供蒸鍍用坩堝以及具備這種蒸鍍用坩堝的蒸鍍源和蒸鍍裝置,可以抑制蒸鍍材料向開口部及其周邊析出,從而使蒸鍍材料穩定擴散。According to the present invention, it is possible to provide a crucible for vapor deposition, a vapor deposition source and a vapor deposition apparatus including the crucible for vapor deposition, which can suppress the deposition of the vapor deposition material into the opening and its surroundings, thereby stably diffusing the vapor deposition material.

以下,適當參照附圖詳細說明本發明的一個實施方式的蒸鍍用坩堝、蒸鍍源和蒸鍍裝置。Hereinafter, a crucible for vapor deposition, a vapor deposition source, and a vapor deposition apparatus according to one embodiment of the present invention will be described in detail with appropriate reference to the drawings.

(蒸鍍用坩堝)(Crucible for evaporation)

圖1的蒸鍍用坩堝10用於蒸鍍裝置的蒸鍍源。蒸鍍用坩堝10是收容將被汽化的蒸鍍材料的容器。利用感應加熱對蒸鍍用坩堝10進行加熱。蒸鍍用坩堝10呈有底的大致圓筒形狀。在圖1的蒸鍍用坩堝10中,下側為底,上側開口。即,蒸鍍用坩堝10的上側頂端具有開口部11。The crucible 10 for vapor deposition in FIG. 1 is used as a vapor deposition source of a vapor deposition apparatus. The crucible 10 for vapor deposition is a container containing the vapor deposition material to be vaporized. The crucible 10 for vapor deposition is heated by induction heating. The crucible 10 for vapor deposition has a substantially cylindrical shape with a bottom. In the vapor deposition crucible 10 of FIG. 1 , the lower side is the bottom and the upper side is open. That is, the crucible 10 for vapor deposition has the opening 11 at the upper top end.

在蒸鍍用坩堝10中,以垂直於中心軸A(圖1中的蒸鍍用坩堝10的對稱軸)的假想面B作為邊界,形成開口部側部分12(圖1中的上側部分)與其他部分13(圖1中的下側部分)的材料各異。開口部側部分12是包括開口部11的部分,以蒸鍍用坩堝10的高度作為基準,例如可以是從開口部11(圖1中的上端)至10~50%的部分。蒸鍍用坩堝10的開口部側部分12具有細腰部14。其他部分13是開口部側部分12以外的部分,即底側的部分。其他部分13是主要收容蒸鍍材料的部分。但是,蒸鍍材料也可以收容至開口部側部分12。In the crucible for vapor deposition 10, an opening side portion 12 (the upper portion in Fig. 1) and The other part 13 (lower part in Figure 1) is made of different materials. The opening side portion 12 is a portion including the opening 11 , and may be, for example, a portion 10 to 50% from the opening 11 (the upper end in FIG. 1 ) based on the height of the vapor deposition crucible 10 . The opening side portion 12 of the vapor deposition crucible 10 has a narrow waist portion 14 . The other portion 13 is a portion other than the opening side portion 12 , that is, a portion on the bottom side. The other part 13 is a part mainly containing the vapor deposition material. However, the vapor deposition material may be accommodated in the opening side portion 12 .

在本發明的一個實施方式中,開口部側部分12由透過感應加熱引起的溫度上升比其他部分13大的材料形成。開口部側部分12由例如進行頻率為300kHz的高頻感應加熱時溫度上升比其他部分13大的材料形成。按照這種方式的蒸鍍用坩堝10,進行採用線圈的感應加熱時,由於開口部側部分12的溫度容易高於其他部分13,所以能夠抑制汽化的蒸鍍材料向開口部11及其周邊析出,從而使蒸鍍材料穩定擴散。另外,開口部11及其周邊可以是開口部側部分12的一部分或全部。In one embodiment of the present invention, the opening side portion 12 is formed of a material whose temperature rise due to induction heating is greater than that of the other portion 13 . The opening side portion 12 is formed of a material whose temperature rises larger than that of the other portion 13 when high-frequency induction heating with a frequency of 300 kHz is performed, for example. According to the vapor deposition crucible 10 in this manner, when induction heating using a coil is performed, the temperature of the opening side portion 12 is easily higher than that of the other portion 13, so the vaporized deposition material can be suppressed from being deposited into the opening 11 and its surroundings. , thereby stably diffusing the evaporated material. In addition, the opening 11 and its periphery may be part or all of the opening side portion 12 .

形成開口部側部分12和其他部分13的材料,可以分別從現有公知的蒸鍍用坩堝的形成材料等中,考慮蒸鍍材料的種類、汽化的溫度等,選擇滿足上述條件的材料來使用。形成開口部側部分12和其他部分13的材料,分別可以是金屬或非金屬(陶瓷、氧化物、碳等)。另外,開口部側部分12和其他部分13都是金屬的情況下,具有容易進行它們的結合等優點。此外,其他部分13為金屬的情況下,即使在其他部分13透過感應加熱未被充分加熱的情況下,也可以透過來自開口部側部分12的傳熱使溫度有效上升,從而使收容的蒸鍍材料汽化。Materials for forming the opening side portion 12 and other portions 13 can be selected from conventionally known forming materials of vapor deposition crucibles, etc., and materials that satisfy the above conditions can be selected and used, taking into account the type of vapor deposition material, vaporization temperature, etc. The material forming the opening side portion 12 and the other portion 13 may be metal or non-metal (ceramics, oxide, carbon, etc.). In addition, when both the opening side portion 12 and the other portion 13 are made of metal, there is an advantage that they can be easily joined together. In addition, when the other part 13 is made of metal, even if the other part 13 is not sufficiently heated by induction heating, the temperature can be effectively increased by heat transfer from the opening side part 12, thereby evaporating the contained material. Material vaporizes.

感應加熱引起的溫度上升的難易,受材料的電阻率、導磁率等的影響。例如,開口部側部分12可以由電阻率比其他部分13高的材料形成。此外,開口部側部分12可以由導磁率比其他部分13高的材料形成。作為開口部側部分12由電阻率比其他部分13高的材料形成的方式,例如可以列舉開口部側部分12由碳形成、其他部分13由銅形成。此外,開口部側部分12由鐵形成、其他部分13由銅形成的示例,也是開口部側部分12由電阻率比其他部分13高的材料形成的方式,還是開口部側部分12由導磁率比其他部分13高的材料形成的方式。作為開口部側部分12由導磁率比其他部分13高的材料形成的典型方式,可以列舉開口部側部分12由強磁性體材料形成、其他部分13由非磁性體材料形成的方式。在這種方式中,優選開口部側部分12由強磁性體金屬形成、其他部分13由非磁性體金屬形成。The difficulty of temperature rise caused by induction heating is affected by the resistivity, magnetic permeability, etc. of the material. For example, the opening side portion 12 may be formed of a material with a higher resistivity than the other portions 13 . In addition, the opening side portion 12 may be formed of a material with a higher magnetic permeability than the other portion 13 . An example of the method in which the opening side portion 12 is formed of a material having a higher resistivity than the other portion 13 is that the opening side portion 12 is formed of carbon and the other portion 13 is formed of copper. In addition, in the example in which the opening side part 12 is formed of iron and the other part 13 is formed of copper, the opening side part 12 is formed of a material with a higher resistivity than the other part 13 , or the opening side part 12 is made of a material with a higher magnetic permeability than that of the other part 13 . The other parts 13 are made of high-quality materials. A typical method in which the opening side portion 12 is formed of a material with a higher magnetic permeability than the other portion 13 is to form the opening side portion 12 of a ferromagnetic material and the other portion 13 of a nonmagnetic material. In this aspect, it is preferable that the opening side portion 12 is formed of ferromagnetic metal and the other portion 13 is formed of non-magnetic metal.

在本發明的一個實施方式中,開口部側部分12由強磁性體金屬形成,其他部分13由非磁性體金屬形成。利用這種方式的蒸鍍用坩堝10,由於進行採用線圈的感應加熱時,開口部側部分12的溫度容易高於其他部分13,所以能夠抑制汽化的蒸鍍材料向開口部11及其周邊析出,從而使蒸鍍材料穩定擴散。In one embodiment of the present invention, the opening side portion 12 is formed of ferromagnetic metal, and the other portion 13 is formed of non-magnetic metal. With the vapor deposition crucible 10 of this type, when induction heating using a coil is performed, the temperature of the opening side portion 12 is likely to be higher than that of the other portion 13, so it is possible to suppress the vaporized deposition material from being deposited into the opening 11 and its surroundings. , thereby stably diffusing the evaporated material.

作為強磁性體金屬,可以列舉鐵、鎳、鐵素體系不銹鋼(JIS SUS430等)、馬氏體系不銹鋼(JIS SUS410等)、奧氏體-鐵素體系不銹鋼(JIS SUS329J1等)、析出固化系不銹鋼(JIS SUS630等)等。Examples of ferromagnetic metals include iron, nickel, ferritic stainless steel (JIS SUS430, etc.), martensitic stainless steel (JIS SUS410, etc.), austenitic-ferritic stainless steel (JIS SUS329J1, etc.), and precipitation solidification stainless steel. (JIS SUS630, etc.) etc.

作為非磁性體金屬,可以列舉鈦、銅、鋁、奧氏體系不銹鋼(JIS SUS304,SUS316,SUS201等)等,從可適度加熱等的觀點出發,優選鈦和奧氏體系不銹鋼。Examples of nonmagnetic metals include titanium, copper, aluminum, and austenitic stainless steel (JIS SUS304, SUS316, SUS201, etc.). Titanium and austenitic stainless steel are preferred because they can be moderately heated.

在本發明的一個實施方式中,優選形成開口部側部分12的材料及形成其他部分13的材料都是不銹鋼。具體優選開口部側部分12由鐵素體系不銹鋼(JIS SUS430等)、馬氏體系不銹鋼(JIS SUS410等)、奧氏體-鐵素體系不銹鋼(JIS SUS329J1等)、析出固化系不銹鋼(JIS SUS630等)等形成,其他部分13由奧氏體系不銹鋼(JIS SUS304,SUS201等)等形成。這樣,形成開口部側部分12的材料及形成其他部分13的材料都是不銹鋼的情況下,可以透過焊接等將開口部側部分12和其他部分13相對容易且牢固地結合。此外,由於不銹鋼存在強磁性體的和非磁性體的,所以蒸鍍用坩堝10的形成材料適合採用不銹鋼。In one embodiment of the present invention, it is preferable that the material forming the opening side portion 12 and the material forming the other portion 13 are both stainless steel. Specifically, it is preferable that the opening side portion 12 is made of ferritic stainless steel (JIS SUS430, etc.), martensitic stainless steel (JIS SUS410, etc.), austenitic-ferritic stainless steel (JIS SUS329J1, etc.), precipitation solidification stainless steel (JIS SUS630, etc.) ), etc., and other parts 13 are formed of austenitic stainless steel (JIS SUS304, SUS201, etc.), etc. In this way, when the material forming the opening side portion 12 and the material forming the other portion 13 are both stainless steel, the opening side portion 12 and the other portion 13 can be joined relatively easily and firmly through welding or the like. In addition, since there are ferromagnetic and non-magnetic stainless steels, stainless steel is suitably used as the material for forming the vapor deposition crucible 10 .

如上所述,蒸鍍用坩堝10的開口部側部分12形成有細腰部14。即,開口部側部分12上存在直徑較細的部分。按照本發明人的看法,透過在蒸鍍用坩堝10的開口部側部分12設置細腰部14,能夠得到不受蒸鍍材料的數量和加熱的程度等的影響而使蒸鍍材料均勻擴散等優點。另一方面,在開口部側部分具有這種細腰部的現有的坩堝中,蒸鍍材料特別容易在所述細腰部上析出,從而容易導致堵塞。因此,在具有細腰部的蒸鍍用坩堝中應用本發明的情況下,能夠特別顯著地得到能抑制蒸鍍材料向坩堝的開口部及其周邊(細腰部等)析出的優點。As described above, the narrow waist 14 is formed in the opening side portion 12 of the vapor deposition crucible 10 . That is, the opening side portion 12 has a portion with a narrow diameter. According to the inventor's opinion, by providing the narrow waist 14 at the opening side portion 12 of the vapor deposition crucible 10, advantages such as uniform diffusion of the vapor deposition material without being affected by the amount of the vapor deposition material, the degree of heating, etc. can be obtained. . On the other hand, in a conventional crucible having such a narrow waist portion at the opening side, the vapor deposition material is particularly likely to precipitate on the narrow waist portion, thereby easily causing clogging. Therefore, when the present invention is applied to a crucible for vapor deposition having a narrow waist, the advantage of being able to suppress precipitation of the vapor deposition material into the opening of the crucible and its periphery (such as the narrow waist) can be particularly significantly obtained.

作為蒸鍍用坩堝10的高度,例如可以在36mm以上且190mm以下的範圍內。作為蒸鍍用坩堝10的直徑(內徑),例如可以在9mm以上且45mm以下的範圍內。所述蒸鍍用坩堝10的直徑(內徑)可以是其他部分13或底部的直徑(內徑)。作為細腰部14的直徑(內徑)相對於蒸鍍用坩堝10的直徑(內徑)的比,例如可以在0.1以上且0.9以下的範圍內,可以在0.2以上且0.7以下的範圍內。作為蒸鍍用坩堝10的側壁的平均厚度,例如可以在0.3mm以上且1mm以下的範圍內。The height of the vapor deposition crucible 10 may be, for example, in the range of 36 mm or more and 190 mm or less. The diameter (inner diameter) of the vapor deposition crucible 10 may be, for example, in the range of 9 mm or more and 45 mm or less. The diameter (inner diameter) of the vapor deposition crucible 10 may be the diameter (inner diameter) of the other part 13 or the bottom. The ratio of the diameter (inner diameter) of the waist portion 14 to the diameter (inner diameter) of the vapor deposition crucible 10 may be, for example, in the range of 0.1 or more and 0.9 or less, or in the range of 0.2 or more and 0.7 or less. The average thickness of the side wall of the vapor deposition crucible 10 may be, for example, in the range of 0.3 mm or more and 1 mm or less.

用蒸鍍用坩堝10進行蒸鍍時,蒸鍍材料收容在蒸鍍用坩堝10內。作為蒸鍍材料沒有特別限定,可以列舉用於形成有機EL層等的有機材料,用於形成半導體層、金屬佈線等的無機材料等。這樣蒸鍍用坩堝10在有機蒸鍍和無機蒸鍍中都可以應用。When the vapor deposition crucible 10 is used for vapor deposition, the vapor deposition material is contained in the vapor deposition crucible 10 . The vapor deposition material is not particularly limited, and examples thereof include organic materials used to form organic EL layers, and inorganic materials used to form semiconductor layers, metal wiring, etc. In this way, the crucible 10 for vapor deposition can be used in both organic vapor deposition and inorganic vapor deposition.

考慮汽化效率,將熱性和化學性穩定且熱導率比蒸鍍材料高的粒狀的傳熱介質和蒸鍍材料一起收納於蒸鍍用坩堝10中。或者,將由粒狀的傳熱介質及包覆所述傳熱介質的蒸鍍材料構成的複合材料收納於蒸鍍用坩堝10中。此外,也可以將利用感應加熱而被加熱的加熱介質和蒸鍍材料一起收容於蒸鍍用坩堝10中。Taking the vaporization efficiency into consideration, a granular heat transfer medium that is thermally and chemically stable and has a higher thermal conductivity than the vapor deposition material is housed in the vapor deposition crucible 10 together with the vapor deposition material. Alternatively, a composite material composed of a granular heat transfer medium and a vapor deposition material covering the heat transfer medium is accommodated in the vapor deposition crucible 10 . In addition, the heating medium heated by induction heating may be accommodated in the vapor deposition crucible 10 together with the vapor deposition material.

(蒸鍍源)(Evaporation source)

圖2的蒸鍍源20具備蒸鍍用坩堝10、以覆蓋蒸鍍用坩堝10的周圍的方式配置的線圈21以及和線圈21連接的供電裝置22。線圈21以蒸鍍用坩堝10的中心軸A和線圈21的中心軸A一致的方式配置。蒸鍍源20所具備的蒸鍍用坩堝10的具體方式如上所述。The vapor deposition source 20 in FIG. 2 includes a crucible 10 for vapor deposition, a coil 21 arranged to cover the periphery of the crucible 10 for vapor deposition, and a power supply device 22 connected to the coil 21 . The coil 21 is arranged so that the central axis A of the vapor deposition crucible 10 coincides with the central axis A of the coil 21 . The specific form of the vapor deposition crucible 10 included in the vapor deposition source 20 is as described above.

線圈21用於對蒸鍍用坩堝10進行感應加熱。線圈21可以採用電線螺旋狀纏繞而成的圓筒形狀的公知的線圈。The coil 21 is used to inductively heat the crucible 10 for vapor deposition. The coil 21 may be a known cylindrical coil in which electric wires are spirally wound.

供電裝置22和線圈21連接,通常向線圈21供給交流電流。供電裝置22與商用電源等連接,通常產生規定頻率的交流電。從供電裝置22向線圈21供給的電流的頻率並沒有特別限定,可以根據形成蒸鍍用坩堝10的材料等來設定,例如能夠設為數10~數100kHz的範圍,可以是100~600kHz的範圍內,也可以是300~500kHz的範圍內。The power supply device 22 is connected to the coil 21 and usually supplies alternating current to the coil 21 . The power supply device 22 is connected to a commercial power supply, etc., and usually generates alternating current of a predetermined frequency. The frequency of the current supplied from the power supply device 22 to the coil 21 is not particularly limited, and can be set according to the material forming the vapor deposition crucible 10 , for example, it can be in the range of several tens to several hundred kHz, or in the range of 100 to 600 kHz. , or it can be in the range of 300 to 500kHz.

按照所述蒸鍍源20,在透過使電流流過線圈21而產生的感應加熱中,由於蒸鍍用坩堝10的開口部側部分12的溫度容易高於其他部分13,所以能夠抑制汽化的蒸鍍材料向開口部11及其周邊析出,從而使蒸鍍材料穩定擴散。According to the vapor deposition source 20 , during induction heating by causing current to flow through the coil 21 , the temperature of the opening side portion 12 of the vapor deposition crucible 10 is likely to be higher than that of the other portion 13 , so the vaporization of the vapor can be suppressed. The plating material precipitates toward the opening 11 and its surroundings, thereby stably diffusing the vapor deposition material.

蒸鍍源例如是具有蒸鍍材料收容室和擴散室的結構。這種情況下,在蒸鍍材料收容室中收容有蒸鍍材料的蒸鍍用坩堝以其周圍被線圈覆蓋的狀態配置。擴散室連接有噴射蒸鍍材料的噴嘴。在這種蒸鍍源中,透過加熱而汽化的蒸鍍用坩堝內的蒸鍍材料,從蒸鍍材料收容室向擴散室移動。移動到擴散室的氣體狀的蒸鍍材料從噴嘴噴射。噴嘴例如可以配置在擴散室的上表面。蒸鍍材料收容室與擴散室可以形成一體,也可以單獨構成。蒸鍍源構成為,利用電源供給裝置和設置在蒸鍍材料的流道上的閥門等,可控制蒸鍍材料的放出量。The vapor deposition source has a structure including a vapor deposition material storage chamber and a diffusion chamber, for example. In this case, the vapor deposition crucible containing the vapor deposition material is placed in the vapor deposition material storage chamber with its periphery covered by the coil. The diffusion chamber is connected with a nozzle for spraying evaporation material. In this type of vapor deposition source, the vapor deposition material in the vapor deposition crucible that is vaporized by heating moves from the vapor deposition material storage chamber to the diffusion chamber. The gaseous vapor deposition material moved to the diffusion chamber is sprayed from the nozzle. For example, the nozzle may be arranged on the upper surface of the diffusion chamber. The evaporation material storage chamber and the diffusion chamber may be integrated or may be configured separately. The vapor deposition source is configured such that the discharge amount of the vapor deposition material can be controlled using a power supply device and a valve provided on the flow path of the vapor deposition material.

(蒸鍍裝置)(Vapor deposition device)

圖3的蒸鍍裝置30具備蒸鍍源20、基板保持部31和真空腔32。蒸鍍源20中的至少蒸鍍用坩堝10和線圈21以及基板保持部31配置在真空腔32內。供電裝置22可以配置在真空腔32外。The vapor deposition apparatus 30 in FIG. 3 includes a vapor deposition source 20, a substrate holding part 31, and a vacuum chamber 32. Among the vapor deposition sources 20 , at least the vapor deposition crucible 10 , the coil 21 , and the substrate holding portion 31 are arranged in the vacuum chamber 32 . The power supply device 22 may be arranged outside the vacuum chamber 32 .

蒸鍍源20(以線圈21覆蓋周圍的方式配置的蒸鍍用坩堝10)配置在真空腔32內的下方。蒸鍍用坩堝10內收容有固體狀的蒸鍍材料X。The vapor deposition source 20 (the vapor deposition crucible 10 arranged so that the coil 21 covers the surrounding area) is arranged below in the vacuum chamber 32 . The crucible 10 for vapor deposition contains the solid vapor deposition material X.

基板保持部31配置在真空腔32內的上方。作為蒸鍍對象的基板Y朝下配置於基板保持部31。對於構成基板Y的材料沒有特別限定,可以是樹脂、金屬、氧化物等。The substrate holding portion 31 is arranged above the vacuum chamber 32 . The substrate Y to be evaporated is placed facing downward in the substrate holding portion 31 . The material constituting the substrate Y is not particularly limited, and may be resin, metal, oxide, etc.

利用真空腔32,能夠對進行蒸鍍的空間維持適當的真空度。即,蒸鍍裝置30可以是真空蒸鍍裝置。真空腔32具備透過排出真空腔32內的氣體使真空腔32內的壓力降低的真空泵,以及透過向真空腔32內注入一定的氣體使真空腔32內的壓力上升的通風裝置等。The vacuum chamber 32 can maintain an appropriate degree of vacuum in the space where evaporation is performed. That is, the evaporation device 30 may be a vacuum evaporation device. The vacuum chamber 32 includes a vacuum pump that reduces the pressure in the vacuum chamber 32 by discharging the gas in the vacuum chamber 32 , and a ventilation device that increases the pressure in the vacuum chamber 32 by injecting a certain amount of gas into the vacuum chamber 32 .

蒸鍍裝置30可以透過與現有的蒸鍍裝置(例如,現有的真空蒸鍍裝置)同樣的方法使用。按照所述蒸鍍裝置30,可以抑制進行蒸鍍時的蒸鍍材料X向蒸鍍用坩堝10的開口部及其周邊析出。因此按照所述蒸鍍裝置30,可以長時間穩定地進行蒸鍍。The evaporation device 30 can be used in the same manner as an existing evaporation device (for example, an existing vacuum evaporation device). According to the vapor deposition device 30 , it is possible to suppress the deposition of the vapor deposition material X into the opening of the vapor deposition crucible 10 and its surroundings during vapor deposition. Therefore, according to the vapor deposition device 30, vapor deposition can be performed stably for a long time.

(其他實施方式)(Other implementations)

本發明不限於上述的實施方式,在不改變本發明的思想的範圍內還可以變更結構。例如,蒸鍍用坩堝的形狀沒有特別限定,可以是圓筒形以外的形狀。此外,蒸鍍用坩堝可以是開口部側部分沒有細腰部的形狀。The present invention is not limited to the above-described embodiments, and the structure may be modified within the scope of not changing the spirit of the present invention. For example, the shape of the vapor deposition crucible is not particularly limited and may be any shape other than a cylindrical shape. In addition, the crucible for vapor deposition may have a shape such that the opening side portion does not have a narrow waist.

蒸鍍用坩堝例如可以由3種以上的材料構成。即使這種情況下,只要開口部側部分由透過感應加熱引起的溫度上升比其他任意部分大的材料形成,或開口部側部分由強磁性體金屬形成、其他任意部分由非磁性體金屬形成即可。但是,開口部側部分與其他部分之間等,存在連接各材料間(各部分間)的材料的情況下,不考慮所述連接的材料。The crucible for vapor deposition may be composed of three or more materials, for example. Even in this case, as long as the opening side part is formed of a material whose temperature rise due to induction heating is greater than that of any other part, or the opening side part is formed of a ferromagnetic metal and the other optional parts are formed of a nonmagnetic metal. Can. However, when there is a material connecting each material (between each part) between the opening side part and other parts, etc., the connecting material is not considered.

(實施例)(Example)

以下,列舉實施例對本發明的內容更具體地進行說明。另外,本發明不限於以下的實施例。Hereinafter, the content of this invention is demonstrated more concretely using an Example. In addition, the present invention is not limited to the following examples.

(實施例1)(Example 1)

製作出開口部側部分由強磁性體金屬的SUS430形成、其他部分由非磁性體金屬的SUS316形成、開口部側部分具有細腰部、容量為2cm 3的大致圓筒形狀的坩堝。使用所述坩堝和電線螺旋狀等間隔纏繞形成的線圈,組裝出實施例1的蒸鍍源。 A substantially cylindrical crucible with a narrow waist and a capacity of 2 cm 3 was produced with the opening side part made of SUS430, a ferromagnetic metal, and the other parts made of non-magnetic metal SUS316. The evaporation source of Example 1 was assembled using the crucible and the coil formed by spirally winding the wires at equal intervals.

(實施例2)(Example 2)

製作出除了容量為5cm 3以外、其他和實施例1中製作的坩堝同樣的坩堝。組裝出實施例2的蒸鍍源,除了採用上述坩堝以外、其他和實施例1同樣。 A crucible similar to the one produced in Example 1 was produced except that the capacity was 5 cm 3 . The evaporation source of Example 2 was assembled, and the conditions were the same as those of Example 1 except that the above-mentioned crucible was used.

(比較例1)(Comparative example 1)

組裝出比較例1的蒸鍍源,除了採用鈦制的同一材料構成的容量為2cm 3的坩堝以外、其他和實施例1同樣。 The evaporation source of Comparative Example 1 was assembled in the same manner as in Example 1 except that a titanium crucible with a capacity of 2 cm 3 made of the same material was used.

(比較例2)(Comparative example 2)

組裝出比較例2的蒸鍍源,除了採用鈦制的同一材料構成的容量為5cm 3的坩堝以外、其他和實施例2同樣。 The evaporation source of Comparative Example 2 was assembled in the same manner as in Example 2 except that a titanium crucible with a capacity of 5 cm 3 made of the same material was used.

(評價)(evaluation)

針對實施例1、2和比較例1、2的蒸鍍源,分別透過在坩堝內收容蒸鍍材料並進行感應加熱從而使蒸鍍材料汽化。蒸鍍材料使用Alq3(三(8-羥基喹啉)鋁),感應加熱透過使頻率為350kHz的交流電流流過線圈來進行。在比較例1、2的各蒸鍍源中,在開口部的周邊蒸鍍材料逐漸析出,最終產生了堵塞,而在實施例1、2的各蒸鍍源中,開口部的周邊沒有蒸鍍材料析出。Regarding the vapor deposition sources of Examples 1 and 2 and Comparative Examples 1 and 2, the vapor deposition material was vaporized by containing the vapor deposition material in the crucible and performing induction heating. Alq3 (tris(8-hydroxyquinoline)aluminum) is used as the evaporation material, and induction heating is performed by flowing an alternating current with a frequency of 350 kHz through the coil. In each of the vapor deposition sources of Comparative Examples 1 and 2, the vapor deposition material gradually precipitated around the opening, eventually causing clogging. However, in each of the vapor deposition sources of Examples 1 and 2, there was no vapor deposition around the opening. Material segregates.

產業利用性Industrial applicability

本發明的蒸鍍用坩堝、蒸鍍源和蒸鍍裝置,可以良好應用於顯示面板和太陽能電池等的金屬電極佈線、半導體層、有機EL層、其他有機材料薄膜和無機材料薄膜等的成膜。The crucible for vapor deposition, the vapor deposition source, and the vapor deposition device of the present invention can be favorably used for film formation of metal electrode wiring, semiconductor layers, organic EL layers, other organic material thin films, and inorganic material thin films of display panels, solar cells, etc. .

10:蒸鍍用坩堝 11:開口部 12:開口部側部分 13:其他部分 14:細腰部 20:蒸鍍源 21:線圈 22:供電裝置 30:蒸鍍裝置 31:基板保持部 32:真空腔 A:中心軸 B:垂直於中心軸A的假想面 X:蒸鍍材料 Y:基板 10: Crucible for evaporation 11:Opening part 12: Opening side part 13:Other parts 14: thin waist 20: Evaporation source 21: coil 22:Power supply device 30: Evaporation device 31:Substrate holding part 32: Vacuum chamber A:Central axis B: Imaginary surface perpendicular to central axis A X:Vapor deposition material Y:Substrate

圖1是表示本發明的一個實施方式的蒸鍍用坩堝的側視圖。 圖2是表示本發明的一個實施方式的蒸鍍源的側視示意圖。 圖3是表示本發明的一個實施方式的蒸鍍裝置的示意圖。 FIG. 1 is a side view of a crucible for vapor deposition according to one embodiment of the present invention. FIG. 2 is a schematic side view of a vapor deposition source according to one embodiment of the present invention. FIG. 3 is a schematic diagram showing a vapor deposition apparatus according to an embodiment of the present invention.

10:蒸鍍用坩堝 10: Crucible for evaporation

11:開口部 11:Opening part

12:開口部側部分 12: Opening side part

13:其他部分 13:Other parts

14:細腰部 14: thin waist

A:中心軸 A:Central axis

B:垂直於中心軸A的假想面 B: Imaginary surface perpendicular to central axis A

Claims (7)

一種蒸鍍用坩堝,具有開口部並利用感應加熱進行加熱,所述蒸鍍用坩堝的特徵在於,開口部側部分由透過感應加熱引起的溫度上升比其他部分大的材料形成,形成上述開口部側部分的材料和形成上述其他部分的材料都是不銹鋼。 A crucible for vapor deposition, which has an opening and is heated by induction heating. The crucible for vapor deposition is characterized in that a portion on the side of the opening is made of a material that has a greater temperature rise due to induction heating than other parts, and the opening is formed The material of the side parts and the material forming the other parts mentioned above is all stainless steel. 如請求項1所述的蒸鍍用坩堝,其特徵在於,上述開口部側部分具有細腰部。 The vapor deposition crucible according to claim 1, wherein the opening side portion has a narrow waist. 一種蒸鍍用坩堝,利用感應加熱進行加熱,所述蒸鍍用坩堝的特徵在於,開口部側部分由強磁性體金屬形成,其他部分由非磁性體金屬形成,上述開口部側部分具有細腰部。 A crucible for vapor deposition, which is heated by induction heating. The crucible for vapor deposition is characterized in that the opening side part is formed of a ferromagnetic metal, and the other part is formed of a non-magnetic metal, and the opening side part has a thin waist. . 如請求項3所述的蒸鍍用坩堝,其特徵在於,形成上述開口部側部分的材料和形成上述其他部分的材料都是不銹鋼。 The vapor deposition crucible according to claim 3, wherein the material forming the opening side portion and the material forming the other portion are both stainless steel. 如請求項3所述的蒸鍍用坩堝,其特徵在於,形成上述開口部側部分的材料是鐵、鎳、鐵素體系不銹鋼、馬氏體系不銹鋼、奧氏體-鐵素體系不銹鋼或析出固化系不銹鋼,形成上述其他部分的材料是鈦、銅、鋁或奧氏體系不銹鋼。 The vapor deposition crucible according to claim 3, wherein the material forming the opening side portion is iron, nickel, ferritic stainless steel, martensitic stainless steel, austenitic-ferritic stainless steel, or precipitation solidified stainless steel. It is stainless steel, and the material forming the other parts mentioned above is titanium, copper, aluminum or austenitic stainless steel. 一種蒸鍍源,其特徵在於包括:如請求項1至5中任意一項所述的蒸鍍用坩堝;以及以覆蓋上述蒸鍍用坩堝的周圍的方式配置的線圈。 A vapor deposition source characterized by including: the crucible for vapor deposition according to any one of claims 1 to 5; and a coil arranged to cover the periphery of the crucible for vapor deposition. 一種蒸鍍裝置,其特徵在於,具備如請求項6所述的蒸鍍源。A vapor deposition device, comprising the vapor deposition source according to claim 6.
TW111145925A 2021-12-07 2022-11-30 Crucible for evaporation, evaporation source and evaporation device TWI835441B (en)

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JP2021-198805 2021-12-07
JP2021198805A JP7350045B2 (en) 2021-12-07 2021-12-07 Deposition crucible, deposition source and deposition equipment

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TW202323558A TW202323558A (en) 2023-06-16
TWI835441B true TWI835441B (en) 2024-03-11

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5976558A (en) 1982-10-25 1984-05-01 Toshiba Corp Centrifugal clarifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5976558A (en) 1982-10-25 1984-05-01 Toshiba Corp Centrifugal clarifier

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