TWI832310B - 短路保護電路 - Google Patents
短路保護電路 Download PDFInfo
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- TWI832310B TWI832310B TW111124378A TW111124378A TWI832310B TW I832310 B TWI832310 B TW I832310B TW 111124378 A TW111124378 A TW 111124378A TW 111124378 A TW111124378 A TW 111124378A TW I832310 B TWI832310 B TW I832310B
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- 239000002184 metal Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 11
- 239000013256 coordination polymer Substances 0.000 description 6
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Abstract
短路保護電路適用於功率電晶體。短路保護電路包括第一二極體、第一電阻、分壓電路、閘極電壓產生器、下拉電路以及控制信號產生器。第一二極體耦接至功率電晶體的汲極端。第一電阻耦接在二極體與功率電晶體間。分壓電路耦接在功率電晶體的閘極端與源極端間,用以產生分壓電壓。閘極電壓產生器根據第一驅動信號以及第二驅動信號以提供閘極電壓至功率電晶體的閘極端。下拉電路根據控制信號以拉低閘極電壓。控制信號產生器根據第一驅動信號、二極體陽極端上的電壓以及分壓電壓以產生控制信號。
Description
本發明是有關於一種短路保護電路,且特別是有關於一種應用於碳化矽功率電晶體的短路保護電路。
近年來碳化矽功率電晶體的技術快速的發展,並被廣泛的應用在能源轉換和分配、航空電子和汽車、可再生能源和電力牽引等領域上。
為確保功率電晶體的安全性,短路保護電路常被應用已在當電子裝置發生短路現象時執行保護動作。然而,在電路成本的考量下,如何設計可快速反應以即時截止功率電晶體的短路保護電路,是為本領域技術人員的一重要課題。
本發明提供一種短路保護電路,在短路狀態發生時,可加速功率電晶體被截止的速度。
本發明的短路保護電路適用於功率電晶體。短路保護電路包括第一二極體、第一電阻、分壓電路、閘極電壓產生器、下
拉電路以及控制信號產生器。第一二極體具有陰極端耦接至功率電晶體的汲極端。第一電阻耦接在二極體的陽極端與功率電晶體的閘極端間。分壓電路耦接在功率電晶體的閘極端與功率電晶體的源極端間,用以產生分壓電壓。閘極電壓產生器根據第一驅動信號以及第二驅動信號以提供閘極電壓至功率電晶體的閘極端。下拉電路耦接至功率電晶體的閘極端,根據控制信號以拉低閘極電壓。控制信號產生器根據第一驅動信號、二極體陽極端上的電壓以及分壓電壓以產生控制信號。
基於上述,本發明的短路保護電路可根據功率電晶體上所流通的短路電流來產生控制信號,並透過控制信號使下拉電路被啟動,以進一步使功率電晶體被截止。本發明一實施例中,短路保護電路的部分電路與功率電晶體也可整合在相同的積體電路上,可加快功率電晶體的截止的速率。
100、200、400、500、600、700:短路保護電路
110、210、410、510、610、710:分壓電路
120、220、420、520、620、720:閘極電壓產生器
130、230、430、530、630、730:下拉電路
140、240、440、540、640、740:控制信號產生器
241:比較器
242:邏輯電路
300:積體電路
311、312、313:導電結構
320:基底
331~334:金屬結構
340:導電層
370:絕緣結構
CP:比較結果
Ctrl:控制信號
DRV1、DRV2:驅動信號
GS:閘極結構
GT:閘極端
Mp:功率電晶體
MP0、MP1、MN0、MN1、M1、T0、T1:電晶體
Rg1、Rg2、RI1、RI2、R1、R2、Rd:電阻
SC:源極端
SD1、D1、D2、D3、D4:二極體
SR:源極區
Va、V1、V2:電壓
Vb:分壓電壓
Vg:閘極電壓
WP:拾取井區
WR:井區
Vp:電源電壓
圖1繪示本發明一實施例的短路保護電路的示意圖。
圖2繪示本發明另一實施例的短路保護電路的示意圖。
圖3繪示本發明實施例中,整合功率電晶體以及部分的短路保護電路的積體電路的示意圖。
圖4至圖7繪示本發明多個實施例的短路保護電路的示意圖。
請參照圖1,圖1繪示本發明一實施例的短路保護電路的示意圖。短路保護電路100包括二極體SD1、電阻Rd、分壓電路110、閘極電壓產生器120、下拉電路130以及控制信號產生器140。短路保護電路100適於針對功率電晶體Mp執行短路保護動作。其中,二極體SD1的陰極端耦接至功率電晶體Mp的汲極端,二極體SD1的陽極端與電阻Rd的一端相耦接,電阻Rd的另一端則耦接至功率電晶體Mp的閘極端。分壓電路110耦接在功率電晶體Mp的閘極端與功率電晶體Mp的源極端間,分壓電路110針對功率電晶體Mp的閘極端與源極端間的電壓差進行分壓,並藉以產生分壓電壓Vb。閘極電壓產生器120耦接至功率電晶體Mp的閘極端。閘極電壓產生器120接收驅動信號DRV1以及DRV2,並根據驅動信號DRV1以及DRV2以提供閘極電壓Vg至功率電晶體Mp的閘極端。其中,閘極電壓產生器120接收電壓V1以及V2,並根據驅動信號DRV1以及DRV2來根據電壓V1或V2以產生閘極電壓Vg。在本實施例中,電壓V1大於電壓V2,且在當閘極電壓Vg等於電壓V1時,功率電晶體Mp可被導通,在當閘極電壓Vg等於電壓V2時,功率電晶體Mp則可被截止。
在另一方面,下拉電路130耦接至功率電晶體Mp的閘極。下拉電路130接收控制信號Ctrl,並根據控制信號Ctrl以決定是否下拉閘極電壓Vg至電壓V2,並藉以使功率電晶體Mp可被截止。控制信號Ctrl由控制信號產生器140來產生。控制信號
產生器140接收驅動信號DRV1、分壓電壓Vb以及二極體SD1的陽極端上的電壓Va,並根據驅動信號DRV1、分壓電壓Vb以及二極體SD1的陽極端上的電壓Va來產生控制信號Ctrl。
在本實施例中,在當功率電晶體Mp被導通而執行正常動作時,在正常狀態(未發生短路現象)下,控制信號產生器140可比較分壓電壓Vb以及二極體SD1的陽極端上的電壓Va來產生比較結果,根據比較結果來產生控制信號Ctrl,並透過控制信號Ctrl來使下拉電路130不被啟動,並使功率電晶體Mp維持為被導通的狀態。在此時,二極體SD1的陽極端上的電壓Va小於分壓電壓Vb。
在當短路現象發生時,二極體SD1的陽極端上的電壓Va則可大於分壓電壓Vb。控制信號產生器140則可根據電壓Va以及分壓電壓Vb的比較結果,來產生控制信號Ctrl,並透過控制信號Ctrl來使下拉電路130被啟動,並將閘極電壓Vg下拉至電壓V2。如此一來,功率電晶體Mp可根據閘極電壓Vg而被截止,並達成短路保護的動作。
值得一提的,在本實施例中,分壓電路110、二極體SD1、下拉電路130與功率電晶體Mp可都整合在相同的一積體電路中。如此一來,當短路現象發生時,功率電晶體Mp可快速的被截止,有效提升短路保護的效率。
在本發明其他實施例中,功率電晶體Mp可設置在一積體電路上,而分壓電路110、二極體SD1與下拉電路130也可設置
在上述的積體電路外,沒有一定的限制。
以下請參照圖2,圖2繪示本發明另一實施例的短路保護電路的示意圖。短路保護電路200包括二極體SD1、電阻Rd、分壓電路210、閘極電壓產生器220、下拉電路230以及控制信號產生器240。短路保護電路200適於針對功率電晶體Mp執行短路保護動作。在本實施例中,閘極電壓產生器220包括電晶體MP0、MP1、二極體D1、D2以及電阻Rg1、Rg2。電晶體MP0的第一端接收電壓V1;電晶體MP0的控制端接收驅動信號DRV1;電晶體MP0的第二端則耦接至二極體D1的陽極端。二極體D1的陰極端耦接至電阻Rg1,電阻Rg1的另一端則耦接至功率電晶體Mp的閘極端。另外,電晶體MP1的第一端接收電壓V2;電晶體MP1的控制端接收驅動信號DRV2;電晶體MP1的第二端則耦接至二極體D2的陰極端。二極體D2的陽極端耦接至電阻Rg2,電阻Rg2的另一端則耦接至功率電晶體Mp的閘極端。其中,電阻Rg1、Rg2相耦接的端點用以提供閘極電壓Vg,電壓V1大於電壓V2。
在本實施例中,控制信號產生器240包括比較器241以及邏輯電路242。比較器241用以比較二極體SD1的陽極端上的電壓Va以及分壓電路210所產生的分壓電壓Vb以產生比較結果CP。邏輯電路242則耦接至比較器241,並針對比較結果CP以及驅動信號DRV1來執行邏輯運算,並產生控制信號Ctrl。在本實施例中,邏輯電路242可以為許密特觸發器架構的及閘。
此外,下拉電路230包括電晶體M1。電晶體M1的一端
耦接至功率電晶體Mp的閘極端;電晶體M1的另一端接收電壓V2;電晶體M1的控制端接收控制信號Ctrl。分壓電路210則包括串接的電阻R1以及R2。其中,電阻R1以及R2串接在功率電晶體Mp的閘極端以及源極端間。
關於短路保護電路200的動作細節,當要使功率電晶體Mp截止時,電晶體MP0可根據驅動信號DRV1而被截止,電晶體MP1則可根據驅動信號DRV2而被導通。在這樣的情況下,電晶體MP1可根據具有相對低電壓值的電壓V2來產生閘極電壓Vg,並使功率電晶體Mp被截止。此外,當要使功率電晶體Mp導通時,電晶體MP0可根據驅動信號DRV1而被導通,電晶體MP1則可根據驅動信號DRV2而被截止。在這樣的情況下,電晶體MP0可根據具有相對高電壓值的電壓V1來產生閘極電壓Vg,並使功率電晶體Mp被導通。
在另一方面,當功率電晶體Mp被導通時,若無短路現象發生,功率電晶體Mp的汲極端以及源極端間的電壓差,根據所驅動的負載大小,例如可介於2~5伏特間。以閘極電壓Vg等於20伏特為範例,此時的二極體SD1可被導通。在本實施例中,二極體SD1可以為蕭特基二極體(Schottky diode),並提供約兩伏特的電壓降。如此一來,二極體SD1的陽極端上的電壓Va約可等於4~7伏特。在分壓電路210中,電阻R1、R2針對閘極電壓Vg以及功率電晶體Mp的源極端上的電壓的電壓差進行分壓,在電阻R2例如為電阻R2的三倍為範例,分壓電壓Vb約可等於15伏特。
根據上述,比較器241使比較電壓Va與分壓電壓Vb比較,並可產生為邏輯低準位的比較結果CP。邏輯電路242則可對應產生為邏輯低準位的控制信號Ctrl,並使下拉電路230不被啟動。功率電晶體Mp可維持為導通的狀態。
當功率電晶體Mp被導通時,且發生短路現象時,短路電流流通過功率電晶體Mp,並使功率電晶體Mp的汲極端以及源極端間的電壓差大於或等於功率電晶體Mp的閘極端以及源極端間的電壓差。在這樣的情況下,二極體SD1處於反向偏壓的狀態,其陽極端上的電壓Va可等於閘極電壓Vg(例如等於20伏特)。另外,分壓電路210可產生例如等於15伏特的分壓電壓Vb。如此一來,比較器241使比較電壓Va與分壓電壓Vb比較,並可產生為邏輯高準位的比較結果CP。邏輯電路242則可根據同樣為邏輯高準位的驅動信號DRV1以及比較結果CP來產生為邏輯高準位的控制信號Ctrl,並使下拉電路230被啟動以拉低閘極電壓Vg至電壓V2。在當閘極電壓Vg被拉低後,功率電晶體Mp可被截止並達到短路保護的效應。
值得一提的,上述動作中所提及的電壓數值,都只是說明用的範例,並不代表本實施例必須工作在上述的電壓數值或電壓範圍中。其中,設計人員可根據實際的狀況以及規格的需求來調整其中的電壓數值以及電壓範圍,沒有特定的限制。
以下請參照圖3,圖3繪示本發明實施例中,整合功率電晶體以及部分的短路保護電路的積體電路的示意圖。圖3繪示積
體電路300的剖面圖。積體電路300具有基底320。基底320上形成多個井區WR。每一井區WR中並形成源極區SR以及拾取井區(well pickup region)WP。源極區SR用以形成功率電晶體的源極端,並電性連接至源極端SC。在相鄰的源極區SR間,並具有多個閘極結構GS以形成功率電晶體的閘極。這些閘極結構GS並共同電性連接至閘極端GT。基底320的下表面並耦接導電層340。導電層340用以形成功率電晶體的汲極,並接收電源電壓Vp。
另外,在基底320的上表面上,並形成一絕緣結構370。絕緣結構370則形成多個導電結構311、312以及313。導電結構311用以形成如圖2實施例中的電阻Rd,導電結構312以及313則分別用以形成圖2實施例中的電阻R1以及R2。另外,導電結構313的一端透過金屬結構334以電性連接至功率電晶體的源極端SC;導電結構313的另一端透過金屬結構333以電性連接至導電結構312的一端;導電結構312的另一端則透過金屬結構332以電性連接至導電結構311的一端以及功率電晶體的閘極端。此外,導電結構311的另一端則透過金屬結構331電性連接至基底320的表面。在功率電晶體為碳化矽電晶體的前提下,金屬結構331與基底320的連接面上可形成一蕭特基二極體,亦即圖2實施例中的二極體SD1。
附帶一提的,金屬結構333上可產生分壓電壓Vb,而金屬結構331為二極體SD1的陽極端,並可提供電壓Va。
由上述的說明可以得知,本發明實施例的短路保護電
路,其中的二極體SD1,連接在功率電晶體的閘極端與二極體SD1間的電阻,以及分壓電路都可以與功率電晶體整合設計在相同的積體電路300中,可有效提高功率電晶體的導通以及截止的速率。如此一來,在當短路現象發生時,本發明實施例的短路保護電路可使功率電晶體快速的被截止,降低電子裝置中的電子元件發生損毀的可能。
以下請參照圖4,圖4繪示本發明另一實施例的短路保護電路的示意圖。短路保護電路400包括二極體SD1、電阻Rd、分壓電路410、閘極電壓產生器420、下拉電路430以及控制信號產生器440。短路保護電路400與圖2實施例的短路保護電路200有相類似的架構,其中相同標號的構件為相同的構件,在此不重複贅述。
與圖2實施例的短路保護電路200不相同的,在本實施例中,閘極電壓產生器420另包括電晶體MN0以及MN1以及二極體D3以及D4。二極體D3的陽極端接收驅動信號DRV1,二極體D3的陰極端則耦接至電晶體MP0的控制端。二極體D4的陽極端接收驅動信號DRV2,二極體D4的陰極端則耦接至電晶體MP1的控制端。另外,電晶體MN0與電晶體MP0並聯耦接,電晶體MN1則與電晶體MP1並聯耦接。電晶體MN0、MN1為N型電晶體,電晶體MP0、MP1則可以為P型電晶體。其中,電晶體MP0的控制端耦接至二極體D3的陰極端;電晶體MP1的控制端耦接至二極體D3的陽極端;電晶體MN0的控制端耦接至二極體D4
的陰極端;電晶體MN1的控制端則耦接至二極體D4的陽極端。
以下請參照圖5,圖5繪示本發明另一實施例的短路保護電路的示意圖。短路保護電路500包括二極體SD1、電阻Rd、分壓電路510、閘極電壓產生器520、下拉電路530以及控制信號產生器540。短路保護電路500與圖4實施例的短路保護電路400有相類似的架構,其中相同標號的構件為相同的構件,在此不重複贅述。
與圖4實施例的短路保護電路400不相同的,在本實施例中,閘極電壓產生器520中,電晶體MP0、MN0的控制端均耦接至二極體D3的陰極端以接收驅動信號DRV1。
以下請參照圖6,圖6繪示本發明另一實施例的短路保護電路的示意圖。短路保護電路600包括二極體SD1、電阻Rd、分壓電路610、閘極電壓產生器620、下拉電路630以及控制信號產生器640。短路保護電路600與圖4實施例的短路保護電路400有相類似的架構,其中相同標號的構件為相同的構件,在此不重複贅述。
與圖4實施例的短路保護電路400不相同的,在本實施例中,閘極電壓產生器620另包括電阻RI1以及RI2。而圖4中的電晶體MN0、MN1則分別被置換為電晶體T0以及T1。電晶體T0的控制端(基極)可透過電阻RI1以耦接至二極體D3的陽極端,電晶體T1的控制端(基極)則可透過電阻RI2以耦接至二極體D4的陽極端。
在本實施例中,電晶體T0以及T1可以為NPN型的雙極性接面電晶體。
以下請參照圖7,圖7繪示本發明另一實施例的短路保護電路的示意圖。短路保護電路700包括二極體SD1、電阻Rd、分壓電路710、閘極電壓產生器720、下拉電路730以及控制信號產生器740。短路保護電路700與圖6實施例的短路保護電路600有相類似的架構,其中相同標號的構件為相同的構件,在此不重複贅述。
在本實施例中,控制信號產生器740耦接至二極體D3的陰極端,閘極電壓產生器720並透過二極體D3的陰極端來傳送驅動信號DRV1至控制信號產生器740。藉此,可降低驅動信號DRV1上的雜訊對控制信號產生器740的動作產生影響。
綜上所述,本發明的短路保護電路,在當短路現象發生時,可快速的因應短路電流以使功率電晶體被截止。降低電路元件因短路電流而產生損壞的可能,提升電子裝置的安全性。
100:短路保護電路
110:分壓電路
120:閘極電壓產生器
130:下拉電路
140:控制信號產生器
Ctrl:控制信號
DRV1、DRV2:驅動信號
Mp:功率電晶體
Rd:電阻
SD1:二極體
Va、V1、V2:電壓
Vb:分壓電壓
Vg:閘極電壓
Claims (21)
- 一種短路保護電路,適用於一功率電晶體,包括:一第一二極體,具有陰極端耦接至該功率電晶體的汲極端;一第一電阻,耦接在該第一二極體的陽極端與該功率電晶體的閘極端間;一分壓電路,耦接在該功率電晶體的閘極端與該功率電晶體的源極端間,產生一分壓電壓;一閘極電壓產生器,根據一第一驅動信號以及一第二驅動信號以提供一閘極電壓至該功率電晶體的閘極端;一下拉電路,耦接至該功率電晶體的閘極端,根據一控制信號以拉低該閘極電壓;以及一控制信號產生器,根據該第一驅動信號、該第一二極體的陽極端上的電壓以及該分壓電壓以產生該控制信號,其中該控制信號產生器包括:一比較器,比較該第一二極體的陽極端上的電壓以及該分壓電壓以產生一比較結果;以及一邏輯電路,針對該比較結果以及該第一驅動信號進行邏輯運算以產生該控制信號。
- 如請求項1所述的短路保護電路,其中該分壓電路、該第一二極體、該下拉電路與該功率電晶體整合在相同的一積體電路中。
- 如請求項1所述的短路保護電路,其中該功率電晶體設置在一積體電路中,該分壓電路、該第一二極體以及該下拉電路設置在該積體電路外。
- 如請求項1所述的短路保護電路,其中該分壓電路針對該功率電晶體的閘極端與該功率電晶體的源極端間的電壓差進行分壓以產生該分壓電壓。
- 如請求項1所述的短路保護電路,其中該分壓電路包括相互串聯耦接的一第二電阻以及一第三電阻,且該分壓電路與該功率電晶體整合在相同的一積體電路中。
- 如請求項5所述的短路保護電路,其中該積體電路包括:一基底;一絕緣結構,設置在該基底的表面上;一第一導電結構,設置在該絕緣結構上,其中該第一導電結構形成該第一電阻;一第二導電結構,設置在該絕緣結構上,其中該第二導電結構形成該第二電阻;一第三導電結構,設置在該絕緣結構上,其中該第三導電結構形成該第三電阻;以及一第一金屬結構,耦接在該第一導電結構的第一端與該基底的表面間,其中該第一金屬結構與該基底形成該第一二極體。
- 如請求項6所述的短路保護電路,其中該積體電路包括:一第二金屬結構,耦接在該第一導電結構的第二端與該第二導電結構的第一端間;一第三金屬結構,耦接在該第二導電結構的第二端與該第三導電結構的第一端間;以及一第四金屬結構,耦接在該第三導電結構的第二端與該功率電晶體的源極間,其中該第二金屬結構並耦接至該功率電晶體的閘極。
- 如請求項1所述的短路保護電路,其中在一第一模式下,該閘極電壓產生器根據該第一驅動信號以及該第二驅動信號以提供等於一第一電壓的該閘極電壓使該功率電晶體被導通。
- 如請求項8所述的短路保護電路,其中在一第二模式下,該閘極電壓產生器根據該第一驅動信號以及該第二驅動信號以提供等於一第二電壓的該閘極電壓使該功率電晶體被截止,其中該第一電壓大於該第二電壓。
- 如請求項1所述的短路保護電路,其中該閘極電壓產生器包括:一第一電晶體,具有第一端接收一第一電壓,該第一電晶體的控制端接收該第一驅動信號;一第二電晶體,具有第一端接收一第二電壓,該第一電晶體的控制端接收該第二驅動信號; 一第二二極體,具有陽極端耦接至該第一電晶體的第二端;一第三二極體,具有陰極端耦接至該第二電晶體的第二端;一第二電阻,具有第一端耦接至該第二二極體的陰極端,該第二電阻的第二端耦接至該功率電晶體的閘極端以提供該閘極電壓;以及一第三電阻,耦接在該第二電阻的第二端與該第三二極體的陽極端間,其中該第一電壓大於該第二電壓。
- 如請求項10所述的短路保護電路,其中該閘極電壓產生器更包括:一第三電晶體,與該第一電晶體並聯耦接;以及一第四電晶體,與該第二電晶體並聯耦接,其中,該第三電晶體與該第一電晶體的導電極性相反,該第四電晶體與該第二電晶體的導電極性相反。
- 如請求項11所述的短路保護電路,其中該閘極電壓產生器更包括:一第四二極體,具有陽極端接收該第一驅動信號,該第四二極體的陰極端接至該第一電晶體的閘極端;一第五二極體,具有陽極端接收該第二驅動信號,該第五二極體的陰極端接至該第二電晶體的閘極端,其中該四電晶體的控制端耦接至該五二極體的陽極端。
- 如請求項12所述的短路保護電路,其中該三電晶體的控制端耦接至該四二極體的陽極端。
- 如請求項12所述的短路保護電路,其中該閘極電壓產生器更包括:一第四電阻,耦接在該第四二極體的陽極端與該第三電晶體的控制端間;以及一第五電阻,耦接在該第五二極體的陽極端與該第四電晶體的控制端間,其中該第三電晶體與該第四電晶體為雙極性電晶體。
- 如請求項12所述的短路保護電路,其中該第四二極體的陽極端或陰極端提供該第一驅動信號至該控制信號產生器。
- 如請求項1所述的短路保護電路,其中該邏輯電路為許密特觸發器架構的及閘。
- 如請求項1所述的短路保護電路,其中當該第一二極體陽極端上的電壓大於該分壓電壓,且該第一驅動信號為邏輯高準位時,該控制信號產生器產生該控制信號以致能該下拉電路。
- 如請求項1所述的短路保護電路,其中該功率電晶體為碳化矽電晶體。
- 如請求項1所述的短路保護電路,其中該下拉電路包括: 一電晶體,具有第一端耦接至該功率電晶體的閘極端,該電晶體的第二端接收一電壓,該電晶體的控制端接收該控制信號。
- 如請求項1所述的短路保護電路,其中在短路現象發生時,該控制信號產生器產生該控制信號以啟動該下拉電路,該下拉電路根據該控制信號以拉低該閘極電壓並使該功率電晶體被截止。
- 如請求項1所述的短路保護電路,其中該第一二極體為蕭特基二極體。
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TW111124378A TWI832310B (zh) | 2022-06-29 | 2022-06-29 | 短路保護電路 |
US17/864,430 US20240007095A1 (en) | 2022-06-29 | 2022-07-14 | Short-circuit protection circuitry |
CN202210879553.3A CN117374889A (zh) | 2022-06-29 | 2022-07-25 | 短路保护电路 |
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Citations (4)
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CN200959511Y (zh) * | 2006-08-30 | 2007-10-10 | 方大集团股份有限公司 | 一种用于电路短路保护的电路 |
TW201201472A (en) * | 2010-06-23 | 2012-01-01 | Anpec Electronics Corp | Short circuit protection circuit, short circuit protection method and power supply device thereof |
US20200280308A1 (en) * | 2019-02-28 | 2020-09-03 | Analog Devices International Unlimited Company | Short-circuit protection of power semiconductor device by sensing current injection from drain to gate |
TW202107816A (zh) * | 2018-07-19 | 2021-02-16 | 愛爾蘭商納維達斯半導體有限公司 | 半橋GaN電路及回轉偵測電路 |
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US5272399A (en) * | 1992-02-25 | 1993-12-21 | Siemens Aktiengesellschaft | Circuit limiting the load current of a power MOSFET |
JP7155534B2 (ja) * | 2018-02-16 | 2022-10-19 | 富士電機株式会社 | 半導体装置 |
US10720913B1 (en) * | 2019-05-28 | 2020-07-21 | Infineon Technologies Austria Ag | Integrated failsafe pulldown circuit for GaN switch |
-
2022
- 2022-06-29 TW TW111124378A patent/TWI832310B/zh active
- 2022-07-14 US US17/864,430 patent/US20240007095A1/en active Pending
- 2022-07-25 CN CN202210879553.3A patent/CN117374889A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN200959511Y (zh) * | 2006-08-30 | 2007-10-10 | 方大集团股份有限公司 | 一种用于电路短路保护的电路 |
TW201201472A (en) * | 2010-06-23 | 2012-01-01 | Anpec Electronics Corp | Short circuit protection circuit, short circuit protection method and power supply device thereof |
TW202107816A (zh) * | 2018-07-19 | 2021-02-16 | 愛爾蘭商納維達斯半導體有限公司 | 半橋GaN電路及回轉偵測電路 |
US20200280308A1 (en) * | 2019-02-28 | 2020-09-03 | Analog Devices International Unlimited Company | Short-circuit protection of power semiconductor device by sensing current injection from drain to gate |
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CN117374889A (zh) | 2024-01-09 |
US20240007095A1 (en) | 2024-01-04 |
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