TWI831226B - capacitor - Google Patents
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- TWI831226B TWI831226B TW111120022A TW111120022A TWI831226B TW I831226 B TWI831226 B TW I831226B TW 111120022 A TW111120022 A TW 111120022A TW 111120022 A TW111120022 A TW 111120022A TW I831226 B TWI831226 B TW I831226B
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- capacitor
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- hole conductor
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- porous layer
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- 239000003990 capacitor Substances 0.000 title claims abstract description 223
- 239000004020 conductor Substances 0.000 claims abstract description 209
- 230000000149 penetrating effect Effects 0.000 claims abstract description 7
- 239000011810 insulating material Substances 0.000 claims description 34
- 239000011148 porous material Substances 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 340
- 239000000463 material Substances 0.000 description 49
- 239000011347 resin Substances 0.000 description 41
- 229920005989 resin Polymers 0.000 description 41
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 25
- 229910052802 copper Inorganic materials 0.000 description 25
- 239000010949 copper Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 238000009413 insulation Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 19
- 238000007747 plating Methods 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 239000000945 filler Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 239000007784 solid electrolyte Substances 0.000 description 12
- 239000000470 constituent Substances 0.000 description 11
- 239000011800 void material Substances 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000002131 composite material Substances 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000000441 X-ray spectroscopy Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 238000013507 mapping Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000032798 delamination Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000011231 conductive filler Substances 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000001741 Ammonium adipate Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000019293 ammonium adipate Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 poly(3,4-ethylene dioxythiophene) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/26—Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices with each other
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
本發明提供可靠性優異之電容器。電容器1具備:電容器層10,具有至少1個電容器部30;以及穿通孔導體60,以於電容器層10之厚度方向T貫通電容器部30之方式來設置;電容器部30具有:於至少一個主面具有多孔質層34之陽極板31、設置於多孔質層34之表面上之介電層35、以及設置於介電層35之表面上之陰極層36;穿通孔導體60包括第1穿通孔導體62,其設置於在厚度方向T貫通電容器部30的第1貫通孔63之至少內壁面上;第1穿通孔導體62電氣連接於陽極板31之端面,上述陽極板31之端面在與厚度方向T正交之面方向U上與第1貫通孔63之內壁面對向;於多孔質層34中存在第1孔34A;於第1孔34A之內部包括第1穿通孔導體62之一部分。The present invention provides a capacitor with excellent reliability. The capacitor 1 includes: a capacitor layer 10 having at least one capacitor part 30; and a through-hole conductor 60 provided to penetrate the capacitor part 30 in the thickness direction T of the capacitor layer 10; the capacitor part 30 has: at least one main surface An anode plate 31 having a porous layer 34, a dielectric layer 35 disposed on the surface of the porous layer 34, and a cathode layer 36 disposed on the surface of the dielectric layer 35; the through-hole conductor 60 includes a first through-hole conductor 62, which is provided on at least the inner wall surface of the first through hole 63 penetrating the capacitor part 30 in the thickness direction T; the first through hole conductor 62 is electrically connected to the end surface of the anode plate 31, and the end surface of the anode plate 31 is in the thickness direction. The plane direction U orthogonal to T faces the inner wall surface of the first through-hole 63; the first hole 34A is present in the porous layer 34; a part of the first through-hole conductor 62 is included inside the first hole 34A.
Description
本發明係關於電容器。This invention relates to capacitors.
專利文獻1中揭示有如下之印刷配線板,其係將鋁基板設為導電路之印刷配線板,其特徵在於具備:鋁基板,具有貫穿之間隙孔;連接層,覆蓋鋁基板之表面且自內層起由鋅膜、鍍鎳層及第1鍍銅層所構成;絕緣層,對將鋁基板之表面側及間隙孔內加以覆蓋之連接層之表層實施黑色氧化物處理,經由經該黑色氧化物處理之連接層而與鋁基板連接;穿通孔,形成於間隙孔所處之部位之絕緣層上且直徑小於間隙孔;銅電路,形成於絕緣層之外表面;第2鍍銅層,形成於鋁基板之背面側;以及於穿通孔內具備將銅電路與第2鍍銅層連通之導電路。Patent Document 1 discloses a printed wiring board in which an aluminum substrate is used as a conductive circuit. It is characterized by having an aluminum substrate with a penetrating clearance hole; and a connection layer that covers the surface of the aluminum substrate and is self-contained. The inner layer is composed of a zinc film, a nickel plating layer and a first copper plating layer; the insulating layer is treated with black oxide on the surface of the connecting layer that covers the surface side of the aluminum substrate and the gap hole, and is passed through the black oxide layer. The connection layer treated with oxide is connected to the aluminum substrate; the through hole is formed on the insulating layer where the gap hole is located and the diameter is smaller than the gap hole; the copper circuit is formed on the outer surface of the insulating layer; the second copper plating layer, It is formed on the back side of the aluminum substrate; and has a conductive path connecting the copper circuit and the second copper plating layer in the through hole.
專利文獻2中揭示有如下之固體電解電容器,其具備:積層有電容器元件之積層體,上述電容器元件具有:於陽極芯部之表面具備多孔質層之陽極體、設置於多孔質層之表面之介電層、設置於介電層之表面之固體電解質層、以及設置於固體電解質層之表面上之陰極部;外裝體,覆蓋積層體;陽極外部電極,設置於外裝體之第1端面,且與陽極芯部電氣連接;以及陰極外部電極,設置於與外裝體之第1端面對向之第2端面,且與陰極部電氣連接;上述固體電解電容器之特徵在於:於外裝體之第1端面側,陽極芯部之端面相對於多孔質層之端面而引入至內側,陽極芯部之端面、與陽極外部電極之內表面之距離為0.01 μm以上、20 μm以下,且引出導體將陽極芯部之端面與陽極外部電極之內表面之間連接。 [先前技術文獻] [專利文獻] Patent Document 2 discloses a solid electrolytic capacitor including a laminate in which a capacitor element is laminated, and the capacitor element has an anode body having a porous layer on the surface of an anode core, and an anode body provided on the surface of the porous layer. A dielectric layer, a solid electrolyte layer disposed on the surface of the dielectric layer, and a cathode portion disposed on the surface of the solid electrolyte layer; an outer casing covering the laminate; and an anode external electrode disposed on the first end surface of the outer casing. , and is electrically connected to the anode core; and the cathode external electrode is disposed on the second end face facing the first end face of the exterior body, and is electrically connected to the cathode portion; the above-mentioned solid electrolytic capacitor is characterized by: On the first end surface side of the body, the end surface of the anode core is introduced inward relative to the end surface of the porous layer, and the distance between the end surface of the anode core and the inner surface of the anode external electrode is 0.01 μm or more and 20 μm or less, and is drawn out A conductor connects the end surface of the anode core to the inner surface of the anode external electrode. [Prior technical literature] [Patent Document]
[專利文獻1]日本特開平8-321666號公報 [專利文獻2]日本特開2020-53588號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 8-321666 [Patent Document 2] Japanese Patent Application Publication No. 2020-53588
[發明所欲解決之問題][Problem to be solved by the invention]
專利文獻1中記載之印刷配線板中,由於設為導電路之鋁基板為塊狀基板,故而與鋁基板如專利文獻2所記載之固體電解電容器般於鋁芯部之表面具有多孔質層之情形相比較,鋁基板與連接層之連接電阻難以降低。因此,即使將專利文獻1所記載之印刷配線板之構成用於電容器,可靠性亦難以提高。In the printed wiring board described in Patent Document 1, since the aluminum substrate used as the conductive path is a bulk substrate, the aluminum substrate has a porous layer on the surface of the aluminum core like the solid electrolytic capacitor described in Patent Document 2. Compared with the situation, it is difficult to reduce the connection resistance between the aluminum substrate and the connection layer. Therefore, even if the structure of the printed wiring board described in Patent Document 1 is used for a capacitor, it is difficult to improve reliability.
另一方面,專利文獻2所記載之固體電解電容器中,使用於陽極芯部之表面具有多孔質層之陽極體。然而,專利文獻2所記載之固體電解電容器中,於設置引出導體時,對陽極芯部之端面進行以鋅酸鹽處理為代表之鍍敷處理,故而藉由該鍍敷處理,多孔質層容易被侵蝕。因此,專利文獻2所記載之固體電解電容器中,於多孔質層上容易產生缺陷,可靠性難以提高。又,專利文獻2所記載之固體電解電容器中,多孔質層之端面與陽極外部電極之內表面不進行金屬鍵結,因此多孔質層與陽極外部電極之連接電阻難以降低,可靠性難以提高。On the other hand, in the solid electrolytic capacitor described in Patent Document 2, an anode body having a porous layer on the surface of the anode core is used. However, in the solid electrolytic capacitor described in Patent Document 2, when the lead-out conductor is provided, the end surface of the anode core is subjected to plating treatment represented by zincate treatment. Therefore, by this plating treatment, the porous layer is easily eroded. Therefore, in the solid electrolytic capacitor described in Patent Document 2, defects are likely to occur in the porous layer, and it is difficult to improve reliability. Furthermore, in the solid electrolytic capacitor described in Patent Document 2, the end surface of the porous layer and the inner surface of the anode external electrode are not metal-bonded. Therefore, it is difficult to reduce the connection resistance between the porous layer and the anode external electrode, and it is difficult to improve reliability.
本發明係為解決上述問題而成者,目的為提供可靠性優異之電容器。 [解決問題之手段] The present invention is made to solve the above-mentioned problems, and aims to provide a capacitor with excellent reliability. [Means to solve problems]
本發明之電容器,其特徵在於,具備:電容器層,具有電容器部;以及穿通孔導體,以於上述電容器層之厚度方向貫通上述電容器部之方式來設置;上述電容器部具有:於至少一個主面具有多孔質層之陽極板、設置於上述多孔質層之表面上之介電層、以及設置於上述介電層之表面上之陰極層;上述穿通孔導體包含第1穿通孔導體,其設置於在上述厚度方向貫通上述電容器部之第1貫通孔之至少內壁面上;上述第1穿通孔導體電氣連接於上述陽極板之端面,上述陽極板之端面在與上述厚度方向正交之面方向上與上述第1貫通孔之上述內壁面對向;於上述多孔質層中存在第1孔;於上述第1孔之內部包含上述第1穿通孔導體之一部分。 [發明效果] The capacitor of the present invention is characterized in that it includes: a capacitor layer having a capacitor portion; and a through-hole conductor provided so as to penetrate the capacitor portion in the thickness direction of the capacitor layer; and the capacitor portion has: on at least one main surface An anode plate having a porous layer, a dielectric layer disposed on the surface of the above-mentioned porous layer, and a cathode layer disposed on the surface of the above-mentioned dielectric layer; the above-mentioned through-hole conductor includes a first through-hole conductor, which is disposed on At least the inner wall surface of the first through hole penetrating the capacitor part in the thickness direction; the first through hole conductor is electrically connected to the end surface of the anode plate, and the end surface of the anode plate is in a plane direction orthogonal to the thickness direction. Facing the inner wall surface of the first through-hole, a first hole is present in the porous layer, and a part of the first through-hole conductor is included inside the first hole. [Effects of the invention]
根據本發明,可提供可靠性優異之電容器。According to the present invention, a capacitor excellent in reliability can be provided.
以下,對本發明之電容器進行說明。此外,本發明並不限定於以下之構成,亦可於不脫離本發明之主旨之範圍內進行適當變更。又,將以下所記載之各個較佳構成組合複數個而成者亦為本發明。Next, the capacitor of the present invention will be described. In addition, the present invention is not limited to the following configurations, and appropriate changes can be made within the scope that does not deviate from the gist of the present invention. In addition, the present invention also includes a plurality of combinations of each of the preferred configurations described below.
本發明之電容器具備:電容器層,具有電容器部;以及穿通孔導體,以於電容器層之厚度方向貫通電容器部之方式來設置。The capacitor of the present invention includes: a capacitor layer having a capacitor part; and a through-hole conductor provided so as to penetrate the capacitor part in the thickness direction of the capacitor layer.
以下,圖示出本發明之電容器之一例設為陣列狀之電容器陣列,並且對本發明之電容器之一例進行說明。Hereinafter, a capacitor array in the form of an array is shown in the figure as an example of the capacitor of the present invention, and an example of the capacitor of the present invention is explained.
圖1係表示本發明之電容器之一例設為陣列狀之電容器陣列的立體示意圖。FIG. 1 is a schematic perspective view of a capacitor array in the form of an array as an example of the capacitor of the present invention.
圖1所示之電容器陣列1具有:電容器層10、及穿通孔導體60。The capacitor array 1 shown in FIG. 1 includes a capacitor layer 10 and a through-hole conductor 60 .
電容器層10可如圖1所示般具有複數個電容器部30,亦可具有1個電容器部30。The capacitor layer 10 may have a plurality of capacitor parts 30 as shown in FIG. 1 , or may have one capacitor part 30 .
於電容器層10具有複數個電容器部30之情形時,複數個電容器部30較佳為由複數個貫通部來劃分而平面配置。此外,複數個電容器部30分別構成電容器。When the capacitor layer 10 has a plurality of capacitor portions 30, it is preferable that the plurality of capacitor portions 30 are divided by a plurality of through portions and arranged planarly. In addition, the plurality of capacitor portions 30 each constitute a capacitor.
於電容器層10具有複數個電容器部30之情形時,複數個電容器部30可配置為直線狀,亦可配置為平面狀。又,複數個電容器部30可有規則地配置,亦可不規則地配置。複數個電容器部30之大小及平面形狀等可全部相同,亦可一部分或者全部不同。When the capacitor layer 10 has a plurality of capacitor portions 30, the plurality of capacitor portions 30 may be arranged in a linear shape or in a planar shape. In addition, the plurality of capacitor units 30 may be arranged regularly or irregularly. The plurality of capacitor portions 30 may all be the same in size, planar shape, etc., or may be partially or entirely different.
電容器層10中亦可包含面積不同之2種以上之電容器部30。The capacitor layer 10 may include two or more types of capacitor portions 30 with different areas.
電容器層10中亦可包含平面形狀不為矩形之電容器部30。本說明書中,矩形意指正方形或者長方形。因此,電容器層10中,亦可包含平面形狀為例如矩形以外之四角形、三角形、五角形、六角形等多角形、包含曲線部之形狀、圓形、橢圓形等之電容器部30。於此情形時,電容器層10中亦可包含平面形狀不同之2種以上之電容器部30。又,電容器層10中,除平面形狀不為矩形之電容器部30以外,可包含、亦可不包含平面形狀為矩形之電容器部30。The capacitor layer 10 may also include a capacitor portion 30 whose planar shape is not rectangular. In this specification, rectangle means square or rectangle. Therefore, the capacitor layer 10 may include a capacitor portion 30 whose planar shape is, for example, a polygonal shape other than a rectangular shape such as a quadrangle, a triangle, a pentagon, or a hexagon, a shape including a curved portion, a circle, an ellipse, or the like. In this case, the capacitor layer 10 may include two or more types of capacitor portions 30 with different planar shapes. In addition, the capacitor layer 10 may or may not include the capacitor part 30 whose planar shape is rectangular, in addition to the capacitor part 30 whose planar shape is not rectangular.
於電容器層10具有1個電容器部30之情形時,電容器陣列1相當於單體之電容器。When the capacitor layer 10 has one capacitor part 30, the capacitor array 1 corresponds to a single capacitor.
穿通孔導體60,更具體而言,第1穿通孔導體62及第2穿通孔導體64分別以於電容器層10之厚度方向T貫通電容器部30之方式來設置。The through-hole conductor 60 , more specifically, the first through-hole conductor 62 and the second through-hole conductor 64 are each provided so as to penetrate the capacitor portion 30 in the thickness direction T of the capacitor layer 10 .
本發明之電容器中,電容器部具有:於至少一個主面具有多孔質層之陽極板、設置於多孔質層之表面上之介電層、以及設置於介電層之表面上之陰極層。In the capacitor of the present invention, the capacitor part has an anode plate with a porous layer on at least one main surface, a dielectric layer provided on the surface of the porous layer, and a cathode layer provided on the surface of the dielectric layer.
圖2係表示包含沿著圖1中之線段A1-A2之剖面的電容器陣列之剖面之一例的剖面示意圖。此外,圖2中之線段A1-A2係與圖1中之線段A1-A2對應。FIG. 2 is a schematic cross-sectional view showing an example of a cross-section of the capacitor array along the line segment A1-A2 in FIG. 1 . In addition, the line segment A1-A2 in FIG. 2 corresponds to the line segment A1-A2 in FIG. 1 .
如圖2所示,電容器部30具有:陽極板31、介電層35、及陰極層36。As shown in FIG. 2 , the capacitor part 30 includes an anode plate 31 , a dielectric layer 35 , and a cathode layer 36 .
陽極板31具有:芯部32、及多孔質層34。The anode plate 31 has a core portion 32 and a porous layer 34 .
芯部32較佳為包含金屬,其中較佳為包含閥作用金屬。The core 32 preferably contains metal, preferably a valve metal.
閥作用金屬例如可舉:鋁、鉭、鈮、鈦、鋯等金屬單體;含有該等金屬單體中之至少1種的合金等。其中,較佳為鋁或鋁合金。Examples of the valve metal include: metal monomers such as aluminum, tantalum, niobium, titanium, and zirconium; alloys containing at least one of these metal monomers; and the like. Among them, aluminum or aluminum alloy is preferred.
多孔質層34設置於芯部32之至少一個主面。即,多孔質層34可僅設置於芯部32之一個主面,亦可如圖2所示般設置於芯部32之兩個主面。如上所述,陽極板31於至少一個主面具有多孔質層34。The porous layer 34 is provided on at least one main surface of the core 32 . That is, the porous layer 34 may be provided on only one main surface of the core part 32, or may be provided on both main surfaces of the core part 32 as shown in FIG. 2. As described above, the anode plate 31 has the porous layer 34 on at least one main surface.
多孔質層34較佳為陽極板31之表面經蝕刻處理而成之蝕刻層。The porous layer 34 is preferably an etching layer formed by etching the surface of the anode plate 31 .
關於多孔質層34之內部構造之詳情,後文進行說明。Details of the internal structure of the porous layer 34 will be described later.
陽極板31之形狀較佳為平板狀,更佳為箔狀。如上所述,本說明書中,「板狀」中亦包含「箔狀」。The shape of the anode plate 31 is preferably flat plate shape, more preferably foil shape. As mentioned above, in this specification, "plate shape" also includes "foil shape".
介電層35設置於多孔質層34之表面上。更具體而言,介電層35係沿著存在於多孔質層34中之各孔之表面(輪廓)而設置。The dielectric layer 35 is disposed on the surface of the porous layer 34 . More specifically, the dielectric layer 35 is provided along the surface (contour) of each pore present in the porous layer 34 .
介電層35較佳為由上述閥作用金屬之氧化皮膜構成。例如,於陽極板31為鋁箔之情形時,藉由對陽極板31,於包含己二酸銨等之水溶液中進行陽極氧化處理(亦稱為化成處理),而形成成為介電層35之氧化皮膜。介電層35沿著多孔質層34之表面而形成,因此於介電層35中設置有細孔(凹部)。The dielectric layer 35 is preferably composed of an oxide film of the valve metal. For example, when the anode plate 31 is an aluminum foil, the anode plate 31 is subjected to an anodizing treatment (also called a chemical conversion treatment) in an aqueous solution containing ammonium adipate or the like to form the oxidation layer that becomes the dielectric layer 35 membrane. Since the dielectric layer 35 is formed along the surface of the porous layer 34 , pores (recesses) are provided in the dielectric layer 35 .
陰極層36設置於介電層35之表面上。The cathode layer 36 is disposed on the surface of the dielectric layer 35 .
如圖2所示,陰極層36較佳為具有:設置於介電層35之表面上之固體電解質層36A、以及設置於固體電解質層36A之表面上之導電體層36B。As shown in FIG. 2 , the cathode layer 36 preferably includes a solid electrolyte layer 36A provided on the surface of the dielectric layer 35 and a conductor layer 36B provided on the surface of the solid electrolyte layer 36A.
固體電解質層36A之構成材料例如可舉:聚吡咯類、聚噻吩類、聚苯胺類等導電性高分子等。其中,較佳為聚噻吩類,特佳為聚(3,4-乙烯二氧噻吩)(poly(3,4-ethylene dioxythiophene),PEDOT)。又,導電性高分子亦可包含聚苯乙烯磺酸(polystyrene sulfonic acid,PSS)等摻雜劑。Examples of materials constituting the solid electrolyte layer 36A include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among them, polythiophenes are preferred, and poly(3,4-ethylene dioxythiophene) (PEDOT) is particularly preferred. In addition, the conductive polymer may also contain dopants such as polystyrene sulfonic acid (PSS).
固體電解質層36A較佳為包括:充填於介電層35之細孔(凹部)中之內層、以及覆蓋介電層35之表面之外層。The solid electrolyte layer 36A preferably includes an inner layer filling the pores (concave portions) of the dielectric layer 35 and an outer layer covering the surface of the dielectric layer 35 .
導電體層36B較佳為包括導電性樹脂層及金屬層中之至少一者。即,導電體層36B可僅包含導電性樹脂層,亦可僅包含金屬層,亦可包含導電性樹脂層及金屬層之兩者。Conductor layer 36B preferably includes at least one of a conductive resin layer and a metal layer. That is, the conductor layer 36B may include only a conductive resin layer, may include only a metal layer, or may include both a conductive resin layer and a metal layer.
導電性樹脂層例如可舉:包含選自由銀填料、銅填料、鎳填料及碳填料所組成之群組中之至少1種導電性填料的導電性黏接劑層等。Examples of the conductive resin layer include a conductive adhesive layer containing at least one conductive filler selected from the group consisting of silver fillers, copper fillers, nickel fillers, and carbon fillers.
金屬層例如可舉金屬鍍敷膜、金屬箔等。金屬層較佳為包含選自由鎳、銅、銀以及以該等金屬之至少1種作為主成分之合金所組成之群組中的至少1種金屬。Examples of the metal layer include metal plating films, metal foils, and the like. The metal layer preferably contains at least one metal selected from the group consisting of nickel, copper, silver, and an alloy containing at least one of these metals as a main component.
本說明書中,主成分意指重量比例最大之元素成分。In this specification, the main component means the elemental component with the largest weight proportion.
導電體層36B例如亦可包括:設置於固體電解質層36A之表面上之碳層、以及設置於碳層之表面上之銅層。The conductor layer 36B may include, for example, a carbon layer provided on the surface of the solid electrolyte layer 36A, and a copper layer provided on the surface of the carbon layer.
碳層係藉由例如利用海綿轉印法、網版印刷法、分配器塗布法、噴墨印刷法等,將碳膏塗布於固體電解質層36A之表面,而形成於預定之區域。The carbon layer is formed in a predetermined area by applying carbon paste to the surface of the solid electrolyte layer 36A using, for example, a sponge transfer method, a screen printing method, a dispenser coating method, an inkjet printing method, or the like.
銅層係藉由例如利用海綿轉印法、網版印刷法、噴射塗布法、分配器塗布法、噴墨印刷法等,將銅膏塗布於碳層之表面,而形成於預定之區域。The copper layer is formed in a predetermined area by applying copper paste to the surface of the carbon layer using, for example, a sponge transfer method, a screen printing method, a jet coating method, a dispenser coating method, an inkjet printing method, or the like.
如以上所述,圖2所示之電容器部30具有:於至少一個主面具有多孔質層34之陽極板31、設置於多孔質層34之表面上之介電層35、以及設置於介電層35之表面上之陰極層36。藉此,電容器部30構成電解電容器。此外,於陰極層36具有固體電解質層36A之情形時,電容器部30構成固體電解電容器。As described above, the capacitor part 30 shown in FIG. 2 has the anode plate 31 with the porous layer 34 on at least one main surface, the dielectric layer 35 provided on the surface of the porous layer 34, and the dielectric layer 35 provided on the surface of the porous layer 34. cathode layer 36 on the surface of layer 35. Thereby, the capacitor part 30 constitutes an electrolytic capacitor. In addition, when the cathode layer 36 has the solid electrolyte layer 36A, the capacitor portion 30 constitutes a solid electrolytic capacitor.
本發明之電容器中,穿通孔導體包括第1穿通孔導體,其設置於在厚度方向貫通電容器部之第1貫通孔之至少內壁面上;第1穿通孔導體電氣連接於陽極板之端面,該陽極板之端面在與厚度方向正交之面方向上與第1貫通孔之內壁面對向。In the capacitor of the present invention, the through-hole conductor includes a first through-hole conductor, which is provided on at least the inner wall surface of the first through-hole that penetrates the capacitor part in the thickness direction; the first through-hole conductor is electrically connected to the end surface of the anode plate, and the first through-hole conductor is electrically connected to the end surface of the anode plate. The end surface of the anode plate faces the inner wall surface of the first through hole in a surface direction orthogonal to the thickness direction.
如圖2所示,第1穿通孔導體62係以於電容器層10之厚度方向T貫通電容器部30之方式來設置。更具體而言,第1穿通孔導體62設置於在厚度方向T貫通電容器部30之第1貫通孔63之至少內壁面上。As shown in FIG. 2 , the first through-hole conductor 62 is provided to penetrate the capacitor portion 30 in the thickness direction T of the capacitor layer 10 . More specifically, the first through-hole conductor 62 is provided on at least the inner wall surface of the first through-hole 63 penetrating the capacitor portion 30 in the thickness direction T.
第1穿通孔導體62電氣連接於陽極板31之端面,該陽極板31之端面在與厚度方向T正交之面方向U上與第1貫通孔63之內壁面對向。圖2所示之例中,第1穿通孔導體62連接於陽極板31之端面。The first through-hole conductor 62 is electrically connected to the end surface of the anode plate 31 which faces the inner wall surface of the first through-hole 63 in the surface direction U perpendicular to the thickness direction T. In the example shown in FIG. 2 , the first through-hole conductor 62 is connected to the end surface of the anode plate 31 .
此外,面方向U存在複數個,但圖1、圖2等中代表性示出其中之1方向。In addition, there are a plurality of plane directions U, but one of them is representatively shown in FIGS. 1 and 2 .
在與第1穿通孔導體62電氣連接之陽極板31之端面,露出芯部32及多孔質層34。因此,除芯部32以外,於多孔質層34中亦形成與第1穿通孔導體62之電氣連接。On the end surface of the anode plate 31 electrically connected to the first through-hole conductor 62, the core portion 32 and the porous layer 34 are exposed. Therefore, in addition to the core portion 32 , electrical connection with the first through-hole conductor 62 is also formed in the porous layer 34 .
第1穿通孔導體62例如以如下方式來形成。首先,藉由對欲形成第1穿通孔導體62之部分,進行鑽孔加工、雷射加工等,來形成第1貫通孔63。然後,藉由利用銅、金、銀等低電阻之金屬,將第1貫通孔63之內壁面進行金屬化,來形成第1穿通孔導體62。形成第1穿通孔導體62時,例如藉由利用無電解鍍銅處理、電解鍍銅處理等,將第1貫通孔63之內壁面進行金屬化,則容易加工。此外,關於形成第1穿通孔導體62之方法,除了將第1貫通孔63之內壁面進行金屬化之方法以外,亦可為將金屬、金屬與樹脂之複合材料等充填於第1貫通孔63中之方法。The first through-hole conductor 62 is formed as follows, for example. First, the first through-hole 63 is formed by drilling, laser processing, or the like on the portion where the first through-hole conductor 62 is to be formed. Then, the first through-hole conductor 62 is formed by metallizing the inner wall surface of the first through-hole 63 with a low-resistance metal such as copper, gold, or silver. When forming the first through-hole conductor 62 , for example, by metallizing the inner wall surface of the first through-hole 63 using electroless copper plating, electrolytic copper plating, or the like, processing can be facilitated. In addition, as a method of forming the first through-hole conductor 62 , in addition to metallizing the inner wall surface of the first through-hole 63 , the first through-hole 63 may also be filled with metal, a composite material of metal and resin, or the like. method.
本發明之電容器中,第1穿通孔導體具有位於陽極板之端面側之陽極連接層,陽極連接層較佳為與陽極板之端面接觸。In the capacitor of the present invention, the first through-hole conductor has an anode connection layer located on the end surface side of the anode plate, and the anode connection layer is preferably in contact with the end surface of the anode plate.
如圖2所示,第1穿通孔導體62較佳為具有位於陽極板31之端面側之陽極連接層68。又,如圖2所示,陽極連接層68較佳為與陽極板31之端面接觸。As shown in FIG. 2 , the first through-hole conductor 62 preferably has an anode connection layer 68 located on the end surface side of the anode plate 31 . Furthermore, as shown in FIG. 2 , the anode connecting layer 68 is preferably in contact with the end surface of the anode plate 31 .
藉由第1穿通孔導體62具有位於陽極板31之端面側之陽極連接層68,陽極連接層68作為對於陽極板31之阻隔層,更具體而言,作為對於芯部32及多孔質層34之阻隔層而發揮功能。藉由利用如上所述之陽極連接層68,用以形成後述導電部20等之化學藥液處理時產生之陽極板31之溶解被抑制,而且化學藥液於電容器部30中之滲入被抑制。因此,電容器陣列1之可靠性容易提高,而且,構成電容器陣列1之電容器之可靠性容易提高。Since the first through-hole conductor 62 has the anode connection layer 68 located on the end surface side of the anode plate 31, the anode connection layer 68 serves as a barrier layer for the anode plate 31, more specifically, as a barrier layer for the core portion 32 and the porous layer 34. It functions as a barrier layer. By using the anode connecting layer 68 as described above, the dissolution of the anode plate 31 caused by the chemical solution treatment for forming the conductive portion 20 and the like described later is suppressed, and the penetration of the chemical solution into the capacitor portion 30 is suppressed. Therefore, the reliability of the capacitor array 1 is easily improved, and the reliability of the capacitors constituting the capacitor array 1 is easily improved.
如圖2所示,陽極連接層68亦可自陽極板31之端面側起依序包括第1陽極連接層68A、及第2陽極連接層68B。As shown in FIG. 2 , the anode connection layer 68 may also include a first anode connection layer 68A and a second anode connection layer 68B in order from the end surface side of the anode plate 31 .
陽極連接層68中,例如,第1陽極連接層68A亦可為以鋅為主成分之層,第2陽極連接層68B亦可為以鎳或銅為主成分之層。於此情形時,第1陽極連接層68A例如藉由利用鋅酸鹽處理而使鋅置換析出,從而形成於陽極板31之端面,然後,第2陽極連接層68B例如藉由無電解鎳鍍敷處理或者無電解鍍銅處理而形成於第1陽極連接層68A之表面上。此外,於第2陽極連接層68B之形成時存在第1陽極連接層68A消失之情形,於此情形時,陽極連接層68亦可僅由第2陽極連接層68B構成。Among the anode connecting layers 68 , for example, the first anode connecting layer 68A may be a layer containing zinc as its main component, and the second anode connecting layer 68B may be a layer containing nickel or copper as its main component. In this case, the first anode connection layer 68A is formed on the end surface of the anode plate 31 by, for example, zincate treatment to replace and precipitate zinc, and then the second anode connection layer 68B is formed by, for example, electroless nickel plating. It is formed on the surface of the first anode connection layer 68A by processing or electroless copper plating. In addition, the first anode connection layer 68A may disappear when the second anode connection layer 68B is formed. In this case, the anode connection layer 68 may be composed of only the second anode connection layer 68B.
陽極連接層68較佳為包括以鎳為主成分之層。於此情形時,對構成陽極板31之金屬(例如鋁)等之損傷減少,因此陽極連接層68對於陽極板31之阻隔性容易提高。The anode connection layer 68 preferably includes a layer containing nickel as its main component. In this case, damage to the metal (for example, aluminum) constituting the anode plate 31 is reduced, so the barrier properties of the anode connecting layer 68 to the anode plate 31 are easily improved.
如圖2所示,於厚度方向T,陽極連接層68之尺寸較佳為大於陽極板31之尺寸。於此情形時,由於陽極板31之端面整體由陽極連接層68覆蓋,故而陽極連接層68對於陽極板31之阻隔性容易提高。As shown in FIG. 2 , in the thickness direction T, the size of the anode connecting layer 68 is preferably larger than the size of the anode plate 31 . In this case, since the entire end surface of the anode plate 31 is covered by the anode connection layer 68, the barrier property of the anode connection layer 68 to the anode plate 31 is easily improved.
於厚度方向T,陽極連接層68之尺寸較佳為大於陽極板31之尺寸之100%、且為200%以下。In the thickness direction T, the size of the anode connecting layer 68 is preferably greater than 100% and less than 200% of the size of the anode plate 31 .
於厚度方向T,陽極連接層68之尺寸可與陽極板31之尺寸相同,亦可小於陽極板31之尺寸。In the thickness direction T, the size of the anode connecting layer 68 may be the same as the size of the anode plate 31 , or may be smaller than the size of the anode plate 31 .
此外,第1穿通孔導體62亦可不具有位於陽極板31之端面側之陽極連接層68。In addition, the first through-hole conductor 62 may not have the anode connection layer 68 located on the end surface side of the anode plate 31 .
本發明之電容器中,當自厚度方向觀察時,第1穿通孔導體較佳為遍及第1貫通孔之全周而與陽極板之端面電氣連接。In the capacitor of the present invention, when viewed from the thickness direction, the first through-hole conductor preferably extends over the entire circumference of the first through-hole and is electrically connected to the end surface of the anode plate.
如圖1及圖2所示,當自厚度方向T觀察時,第1穿通孔導體62較佳為遍及第1貫通孔63之全周而與陽極板31之端面電氣連接。如圖2所示,於第1穿通孔導體62具有位於陽極板31之端面側之陽極連接層68之情形時,當自厚度方向T觀察時,第1穿通孔導體62中之陽極連接層68以外之部分較佳為遍及第1貫通孔63之全周而與陽極連接層68連接。於此情形時,第1穿通孔導體62中,陽極連接層68與陽極連接層68以外之部分的接觸面積增大,因此陽極連接層68與陽極連接層68以外之部分的連接電阻容易降低。其結果,第1穿通孔導體62與陽極板31之連接電阻容易降低,因此電容器部30之等效串聯電阻(Equivalent Series Resistance,ESR)容易降低。進而,於第1穿通孔導體62中,陽極連接層68與陽極連接層68以外之部分之間之密接性容易提高,因此由熱應力引起的陽極連接層68與陽極連接層68以外之部分之間的剝離等不良情況難以產生。As shown in FIGS. 1 and 2 , when viewed from the thickness direction T, the first through-hole conductor 62 preferably extends over the entire circumference of the first through-hole 63 and is electrically connected to the end surface of the anode plate 31 . As shown in FIG. 2 , when the first through-hole conductor 62 has the anode connection layer 68 located on the end surface side of the anode plate 31 , when viewed from the thickness direction T, the anode connection layer 68 in the first through-hole conductor 62 The other parts are preferably connected to the anode connection layer 68 over the entire circumference of the first through hole 63 . In this case, in the first through-hole conductor 62, the contact area between the anode connecting layer 68 and the portion other than the anode connecting layer 68 increases, so the connection resistance between the anode connecting layer 68 and the portion other than the anode connecting layer 68 is likely to decrease. As a result, the connection resistance between the first through-hole conductor 62 and the anode plate 31 tends to decrease, and therefore the equivalent series resistance (ESR) of the capacitor portion 30 tends to decrease. Furthermore, in the first through-hole conductor 62, the adhesion between the anode connecting layer 68 and the portion other than the anode connecting layer 68 is easily improved, so the thermal stress caused by the thermal stress between the anode connecting layer 68 and the portion other than the anode connecting layer 68 increases. It is difficult for defects such as peeling between the layers to occur.
如圖2所示,電容器陣列1,更具體而言是構成電容器陣列1之電容器較佳為進一步具有與第1穿通孔導體62電氣連接之導電部20。圖2所示之例中,導電部20設置於第1穿通孔導體62之表面上。導電部20可作為電容器陣列1,更具體而言,可作為電容器部30之連接端子而發揮功能。As shown in FIG. 2 , the capacitor array 1 , more specifically, the capacitors constituting the capacitor array 1 preferably further have a conductive portion 20 electrically connected to the first through-hole conductor 62 . In the example shown in FIG. 2 , the conductive portion 20 is provided on the surface of the first through-hole conductor 62 . The conductive portion 20 can function as the capacitor array 1 , more specifically, as a connection terminal of the capacitor portion 30 .
導電部20之構成材料例如可舉銀、金、銅等低電阻之金屬。於此情形時,導電部20例如藉由對第1穿通孔導體62之表面進行鍍敷處理而形成。Examples of the constituent material of the conductive portion 20 include low-resistance metals such as silver, gold, and copper. In this case, the conductive portion 20 is formed by, for example, plating the surface of the first through-hole conductor 62 .
為提高導電部20與其他構件之間之密接性,此處,為提高導電部20與第1穿通孔導體62之間之密接性,導電部20之構成材料亦可使用選自由銀填料、銅填料、鎳填料及碳填料所組成之群組中之至少1種導電性填料與樹脂的混合材料。In order to improve the adhesion between the conductive part 20 and other components, here, in order to improve the adhesion between the conductive part 20 and the first through-hole conductor 62, the constituent material of the conductive part 20 may also be selected from silver filler, copper A mixed material of at least one conductive filler and resin from the group consisting of fillers, nickel fillers and carbon fillers.
如圖1及圖2所示,電容器陣列1,更具體而言是構成電容器陣列1之電容器較佳為進一步具有第1樹脂充填部29A,其係於第1貫通孔63中充填樹脂材料而成。圖1及圖2所示之例中,第1樹脂充填部29A設置於第1貫通孔63之內壁面上之由第1穿通孔導體62所包圍之空間中。若藉由設置第1樹脂充填部29A,第1貫通孔63內之空間消除,則第1穿通孔導體62之分層之發生被抑制。As shown in FIGS. 1 and 2 , the capacitor array 1 , more specifically the capacitors constituting the capacitor array 1 , preferably further includes a first resin filling portion 29A, which is formed by filling the first through hole 63 with a resin material. . In the example shown in FIGS. 1 and 2 , the first resin filling portion 29A is provided in the space surrounded by the first through-hole conductor 62 on the inner wall surface of the first through-hole 63 . If the space in the first through-hole 63 is eliminated by providing the first resin filling portion 29A, the occurrence of delamination of the first through-hole conductor 62 is suppressed.
第1樹脂充填部29A之熱膨脹率較佳為大於第1穿通孔導體62之熱膨脹率。更具體而言,充填於第1貫通孔63中之樹脂材料之熱膨脹率較佳為大於第1穿通孔導體62之構成材料(例如銅)之熱膨脹率。於此情形時,藉由充填於第1樹脂充填部29A,更具體而言,充填於第1貫通孔63中之樹脂材料於高溫環境下膨脹,第1穿通孔導體62自第1貫通孔63之內側朝向外側而緊壓於第1貫通孔63之內壁面上,因此第1穿通孔導體62之分層之發生充分被抑制。The thermal expansion coefficient of the first resin filled portion 29A is preferably greater than the thermal expansion coefficient of the first through-hole conductor 62 . More specifically, the thermal expansion coefficient of the resin material filled in the first through-hole 63 is preferably greater than the thermal expansion coefficient of the constituent material of the first through-hole conductor 62 (for example, copper). In this case, since the resin material filled in the first resin filling part 29A, more specifically, the first through hole 63 expands in a high temperature environment, the first through hole conductor 62 passes from the first through hole 63 The inner side faces the outer side and is pressed against the inner wall surface of the first through-hole 63, so the occurrence of delamination of the first through-hole conductor 62 is sufficiently suppressed.
第1樹脂充填部29A之熱膨脹率可與第1穿通孔導體62之熱膨脹率相同,亦可小於第1穿通孔導體62之熱膨脹率。更具體而言,充填於第1貫通孔63中之樹脂材料之熱膨脹率可與第1穿通孔導體62之構成材料之熱膨脹率相同,亦可小於第1穿通孔導體62之構成材料之熱膨脹率。The thermal expansion coefficient of the first resin filling portion 29A may be the same as the thermal expansion coefficient of the first through-hole conductor 62 , or may be smaller than the thermal expansion coefficient of the first through-hole conductor 62 . More specifically, the thermal expansion coefficient of the resin material filled in the first through-hole 63 may be the same as the thermal expansion coefficient of the material constituting the first through-hole conductor 62 , or may be smaller than the thermal expansion coefficient of the material constituting the first through-hole conductor 62 . .
電容器陣列1,更具體而言是構成電容器陣列1之電容器亦可不具有第1樹脂充填部29A。於此情形時,第1穿通孔導體62較佳為不僅設置於第1貫通孔63之內壁面上,而且設置於第1貫通孔63之內部整體。The capacitor array 1, more specifically the capacitors constituting the capacitor array 1, may not have the first resin filling portion 29A. In this case, the first through-hole conductor 62 is preferably provided not only on the inner wall surface of the first through-hole 63 but also on the entire interior of the first through-hole 63 .
如圖2所示,電容器層10較佳為進一步具有設置於電容器部30之表面上之絕緣部25。As shown in FIG. 2 , the capacitor layer 10 preferably further has an insulating portion 25 provided on the surface of the capacitor portion 30 .
如圖2所示,絕緣部25較佳為包括:設置於電容器部30之表面上之第1絕緣部25A、以及設置於第1絕緣部25A之表面上之第2絕緣部25B。As shown in FIG. 2 , the insulating part 25 preferably includes a first insulating part 25A provided on the surface of the capacitor part 30 and a second insulating part 25B provided on the surface of the first insulating part 25A.
第1絕緣部25A及第2絕緣部25B之構成材料例如可舉:環氧、苯酚、聚醯亞胺等樹脂材料,或者環氧、苯酚、聚醯亞胺等樹脂材料與二氧化矽、氧化鋁等無機填料的混合材料等。Examples of the constituent materials of the first insulating part 25A and the second insulating part 25B include resin materials such as epoxy, phenol, and polyimide, or resin materials such as epoxy, phenol, and polyimide combined with silicon dioxide, oxide, etc. Mixed materials with inorganic fillers such as aluminum, etc.
第1絕緣部25A之構成材料與第2絕緣部25B之構成材料可彼此相同,亦可彼此不同。The constituent materials of the first insulating part 25A and the second insulating part 25B may be the same as each other, or may be different from each other.
以下,對多孔質層之內部構造進行說明。Next, the internal structure of the porous layer will be described.
本發明之電容器中,於多孔質層中存在第1孔,且於第1孔之內部包含第1穿通孔導體之一部分。In the capacitor of the present invention, the first hole is present in the porous layer, and a part of the first through-hole conductor is included inside the first hole.
圖3係表示將圖2中之區域Z放大之狀態的剖面示意圖。FIG. 3 is a schematic cross-sectional view showing an enlarged state of the area Z in FIG. 2 .
此外,圖3中雖未示出,但介電層35設置於多孔質層34之表面上,更具體而言,沿著多孔質層34中所存在之各孔之表面(輪廓)而設置。In addition, although not shown in FIG. 3 , the dielectric layer 35 is provided on the surface of the porous layer 34 , more specifically, along the surface (contour) of each pore present in the porous layer 34 .
如圖3所示,於多孔質層34中存在第1孔34A。As shown in FIG. 3 , first pores 34A are present in the porous layer 34 .
於第1孔34A之內部包含第1穿通孔導體62之一部分。圖3所示之例中,於第1孔34A之內部包含陽極連接層68之一部分,更具體而言,包含第1陽極連接層68A之一部分。藉此,多孔質層34與第1穿通孔導體62之間之密接性,更具體而言,多孔質層34與陽極連接層68之間之密接性容易提高。其結果,多孔質層34與第1穿通孔導體62之間之剝離,更具體而言,多孔質層34與陽極連接層68之間之剝離等不良情況難以產生,因此電容器陣列1之可靠性提高,而且,構成電容器陣列1之電容器之可靠性提高。A part of the first through-hole conductor 62 is included inside the first hole 34A. In the example shown in FIG. 3 , a part of the anode connection layer 68 , more specifically, a part of the first anode connection layer 68A is included inside the first hole 34A. Thereby, the adhesion between the porous layer 34 and the first through-hole conductor 62, more specifically, the adhesion between the porous layer 34 and the anode connection layer 68 is easily improved. As a result, defects such as peeling between the porous layer 34 and the first through-hole conductor 62 , more specifically, peeling between the porous layer 34 and the anode connection layer 68 are less likely to occur, thereby improving the reliability of the capacitor array 1 Furthermore, the reliability of the capacitors constituting the capacitor array 1 is improved.
關於在多孔質層中存在內部包含第1穿通孔導體之一部分的第1孔,例如,以如下方式來確認。首先,藉由將電容器切斷,此處將電容器陣列切斷,使如圖2所示之通過自厚度方向觀察時之第1貫通孔之中心且沿著包含多孔質層及第1穿通孔導體之厚度方向之電容器之剖面露出。其次,使用掃描型電子顯微鏡(Scanning Electron Microscope,SEM),來拍攝電容器之露出剖面,此處,拍攝電容器陣列之露出剖面中的如圖3所示之多孔質層之放大圖像。然後,對於所獲得之放大圖像,利用波長分散型X射線分光法(WDX)、能量分散型X射線分光法(EDX)等來進行元素繪圖,藉此於多孔質層內,確認內部包含第1穿通孔導體之一部分的第1孔。The existence of the first hole in the porous layer containing a part of the first through-hole conductor is confirmed, for example, as follows. First, by cutting the capacitor, here the capacitor array, through the center of the first through-hole when viewed from the thickness direction as shown in FIG. 2 and along the conductor including the porous layer and the first through-hole The cross section of the capacitor in the thickness direction is exposed. Next, a scanning electron microscope (SEM) is used to photograph the exposed cross-section of the capacitor. Here, an enlarged image of the porous layer as shown in Figure 3 in the exposed cross-section of the capacitor array is photographed. Then, element mapping is performed on the obtained magnified image using wavelength dispersion X-ray spectroscopy (WDX), energy dispersion X-ray spectroscopy (EDX), etc., thereby confirming that the porous layer contains the third 1 through-hole conductor is part of the first hole.
本發明之電容器中,第1孔較佳為存在於構成陽極板之端面的多孔質層之端面。In the capacitor of the present invention, it is preferable that the first hole is present on the end surface of the porous layer constituting the end surface of the anode plate.
如圖3所示,第1孔34A較佳為存在於構成陽極板31之端面的多孔質層34之端面。於此情形時,由於成為在多孔質層34之端面露出第1孔34A之構造,故而於在第1孔34A之內部包含第1穿通孔導體62之一部分之前之狀態下,可以說多孔質層34之端面成為微細之凹凸狀。As shown in FIG. 3 , the first hole 34A is preferably present in the end surface of the porous layer 34 constituting the end surface of the anode plate 31 . In this case, since the first hole 34A is exposed on the end surface of the porous layer 34, it can be said that the porous layer is in a state before a part of the first through-hole conductor 62 is included in the first hole 34A. The end surface of 34 becomes finely concave and convex.
若多孔質層34之端面成為微細之凹凸狀,則與多孔質層34之端面連接之第1穿通孔導體62進入多孔質層34之端面之凹部中,更具體而言,進入第1孔34A中。例如,如圖3所示,於第1穿通孔導體62具有位於陽極板31之端面側之陽極連接層68之情形時,若多孔質層34之端面成為微細之凹凸狀,則陽極連接層68,更具體而言,第1陽極連接層68A進入多孔質層34之端面之凹部中,更具體而言,進入第1孔34A中。因此,多孔質層34與陽極連接層68之間之密接性更容易提高。其結果,多孔質層34與陽極連接層68之間之剝離等不良情況更難以產生,因此電容器陣列1之可靠性更提高,而且,構成電容器陣列1之電容器之可靠性更提高。When the end surface of the porous layer 34 becomes finely uneven, the first through-hole conductor 62 connected to the end surface of the porous layer 34 enters the recessed portion of the end surface of the porous layer 34, more specifically, enters the first hole 34A. middle. For example, as shown in FIG. 3 , when the first through-hole conductor 62 has the anode connecting layer 68 located on the end surface side of the anode plate 31 , if the end surface of the porous layer 34 becomes finely uneven, the anode connecting layer 68 , more specifically, the first anode connecting layer 68A enters the recessed portion of the end surface of the porous layer 34 , and more specifically, enters the first hole 34A. Therefore, the adhesion between the porous layer 34 and the anode connecting layer 68 can be more easily improved. As a result, defects such as peeling between the porous layer 34 and the anode connecting layer 68 are less likely to occur, so the reliability of the capacitor array 1 is further improved, and the reliability of the capacitors constituting the capacitor array 1 is further improved.
本發明之電容器中,於多孔質層中進一步存在第2孔,於第2孔之內部包含絕緣材料,多孔質層包含第2孔之內部之絕緣材料所存在之絕緣區域,於面方向,絕緣區域之第1穿通孔導體側之外端較佳為較多孔質層之第1穿通孔導體側之外端而言,位於與第1穿通孔導體相反側。In the capacitor of the present invention, a second hole is further provided in the porous layer, and an insulating material is included inside the second hole. The porous layer includes an insulating region where the insulating material is present inside the second hole, and is insulating in the plane direction. The first through-hole conductor-side outer end of the region is preferably located on the opposite side to the first through-hole conductor with respect to the first through-hole conductor-side outer end of the porous layer.
如圖3所示,於多孔質層34中進一步存在第2孔34B。As shown in FIG. 3 , second pores 34B further exist in the porous layer 34 .
於第2孔34B之內部包含絕緣材料34C。藉此,多孔質層34包含第2孔34B之內部之絕緣材料34C所存在之絕緣區域。藉由多孔質層34包含絕緣區域,陽極板31與陰極層36之間之絕緣性得到確保,防止兩者間之短路。An insulating material 34C is included inside the second hole 34B. Thereby, the porous layer 34 includes the insulating region where the insulating material 34C exists inside the second hole 34B. Since the porous layer 34 includes an insulating region, the insulation between the anode plate 31 and the cathode layer 36 is ensured and short circuit between the two is prevented.
圖3中,於多孔質層34中,絕緣材料34C之施加有影線之區域相當於絕緣區域。如上所述,絕緣區域並非於多孔質層34內連續存在之區域,而是不連續存在之區域。In FIG. 3 , in the porous layer 34 , the hatched area of the insulating material 34C corresponds to the insulating area. As described above, the insulating region is not a region that exists continuously in the porous layer 34 but is a region that exists discontinuously.
如圖1及圖2所示,絕緣材料34C所存在之絕緣區域較佳為設置於第1穿通孔導體62之周圍。於此情形時,陽極板31與陰極層36之間之絕緣性充分得到確保,充分防止兩者間之短路。As shown in FIGS. 1 and 2 , the insulating area where the insulating material 34C exists is preferably disposed around the first through-hole conductor 62 . In this case, the insulation between the anode plate 31 and the cathode layer 36 is fully ensured, and short circuit between the two is fully prevented.
絕緣材料34C例如可舉:環氧、苯酚、聚醯亞胺等樹脂材料,或者環氧、苯酚、聚醯亞胺等樹脂材料與二氧化矽、氧化鋁等無機填料的混合材料等。Examples of the insulating material 34C include resin materials such as epoxy, phenol, and polyimide, or mixed materials of resin materials such as epoxy, phenol, and polyimide and inorganic fillers such as silicon dioxide and alumina.
如圖3所示,於面方向U,絕緣區域之第1穿通孔導體62側之外端E1較多孔質層34之第1穿通孔導體62側之外端E2而言,位於與第1穿通孔導體62相反側(此處為左側)。藉此,於構成陽極板31之端面的多孔質層34之端面,包含絕緣材料34C以外之材料(例如鋁)之部分之表面積增大。As shown in FIG. 3 , in the plane direction U, the outer end E1 of the insulating region on the first through-hole conductor 62 side is located closer to the first through-hole conductor 62 than the outer end E2 of the porous layer 34 on the first through-hole conductor 62 side. The side opposite the hole conductor 62 (here the left side). Thereby, the surface area of the portion including the material (for example, aluminum) other than the insulating material 34C on the end surface of the porous layer 34 constituting the end surface of the anode plate 31 increases.
若於多孔質層34之端面,包含絕緣材料34C以外之材料之部分之表面積增大,則與多孔質層34之端面連接之第1穿通孔導體62之被覆性提高。例如,如圖3所示,於第1穿通孔導體62具有位於陽極板31之端面側之陽極連接層68之情形時,若於多孔質層34之端面,包含絕緣材料34C以外之材料之部分之表面積增大,則陽極連接層68,更具體而言,第1陽極連接層68A之被覆性提高。若陽極連接層68對於多孔質層34之端面的被覆性提高,則陽極連接層68對於多孔質層34之阻隔性提高,而且,陽極連接層68對於陽極板31之阻隔性提高。其結果,於用以形成導電部20等之化學藥液處理時所產生之陽極板31之溶解被抑制,而且,化學藥液於電容器部30中之滲入被抑制。因此,電容器陣列1之可靠性更提高,而且,構成電容器陣列1之電容器之可靠性更提高。If the surface area of the portion containing materials other than the insulating material 34C on the end surface of the porous layer 34 is increased, the coating properties of the first through-hole conductor 62 connected to the end surface of the porous layer 34 will be improved. For example, as shown in FIG. 3 , when the first through-hole conductor 62 has the anode connection layer 68 located on the end surface side of the anode plate 31 , if the end surface of the porous layer 34 includes a portion of material other than the insulating material 34C When the surface area of the anode connecting layer 68 is increased, the coating properties of the anode connecting layer 68, more specifically, the first anode connecting layer 68A are improved. If the coverage of the anode connecting layer 68 on the end surface of the porous layer 34 is improved, the barrier properties of the anode connecting layer 68 on the porous layer 34 will be improved, and the barrier properties of the anode connecting layer 68 on the anode plate 31 will also be improved. As a result, the dissolution of the anode plate 31 produced during the chemical solution treatment for forming the conductive portion 20 and the like is suppressed, and the penetration of the chemical solution into the capacitor portion 30 is suppressed. Therefore, the reliability of the capacitor array 1 is further improved, and the reliability of the capacitors constituting the capacitor array 1 is further improved.
若於多孔質層34之端面,包含絕緣材料34C以外之材料之部分之表面積增大,則除了芯部32以外,於多孔質層34中,與第1穿通孔導體62之電氣連接亦容易進行,因此第1穿通孔導體62與陽極板31之連接電阻降低。其結果,電容器部30之等效串聯電阻降低,因此電容器陣列1之可靠性更提高,而且,構成電容器陣列1之電容器之可靠性更提高。If the surface area of the end surface of the porous layer 34 including materials other than the insulating material 34C is increased, electrical connection with the first through-hole conductor 62 in the porous layer 34 in addition to the core portion 32 can be easily performed. , therefore the connection resistance between the first through-hole conductor 62 and the anode plate 31 is reduced. As a result, the equivalent series resistance of the capacitor part 30 is reduced, so the reliability of the capacitor array 1 is further improved, and the reliability of the capacitors constituting the capacitor array 1 is further improved.
絕緣區域之第1穿通孔導體側之外端相對於如圖2所示之通過自厚度方向觀察時之第1貫通孔之中心且沿著包含多孔質層及第1穿通孔導體之厚度方向的電容器之剖面,例如以如下方式來設定。首先,藉由將電容器切斷,此處將電容器陣列切斷,而使如圖2所示之上述剖面露出。其次,使用掃描型電子顯微鏡,來拍攝電容器之露出剖面,此處,拍攝電容器陣列之露出剖面中的如圖3所示之多孔質層之放大圖像。然後,藉由對於所獲得之放大圖像,利用波長分散型X射線分光法來進行元素繪圖,而於多孔質層內確認絕緣材料所存在之絕緣區域。而且,於面方向,將絕緣區域之位於最靠第1穿通孔導體側之端部設定為絕緣區域之第1穿通孔導體側之外端。The outer end of the first through-hole conductor side of the insulating region is relative to the center of the first through-hole when viewed from the thickness direction as shown in FIG. 2 and along the thickness direction including the porous layer and the first through-hole conductor. The cross section of the capacitor is set as follows, for example. First, by cutting off the capacitor, in this case the capacitor array, the above-mentioned cross section as shown in FIG. 2 is exposed. Next, a scanning electron microscope is used to photograph the exposed cross-section of the capacitor. Here, an enlarged image of the porous layer shown in Figure 3 in the exposed cross-section of the capacitor array is photographed. Then, by performing element mapping using wavelength dispersion X-ray spectroscopy on the obtained magnified image, the insulating region where the insulating material exists is confirmed within the porous layer. Furthermore, in the plane direction, the end of the insulating region closest to the first through-hole conductor side is set as the outer end of the insulating region on the first through-hole conductor side.
多孔質層之第1穿通孔導體側之外端例如以如下方式來設定。首先,藉由對於利用上述方法來獲得之放大圖像,利用波長分散型X射線分光法進行元素繪圖,來確認包含絕緣區域之多孔質層之範圍整體。而且,於面方向,將多孔質層之位於最靠第1穿通孔導體側之端部設定為多孔質層之第1穿通孔導體側之外端。The outer end of the porous layer on the first through-hole conductor side is set as follows, for example. First, by performing element mapping using wavelength dispersion X-ray spectroscopy on the enlarged image obtained by the above method, the entire range of the porous layer including the insulating region is confirmed. Furthermore, in the plane direction, the end of the porous layer closest to the first through-hole conductor side is set as the outer end of the porous layer on the first through-hole conductor side.
本發明之電容器中,於面方向,利用上述方法來設定之絕緣區域之第1穿通孔導體側之外端只要較利用上述方法來設定之多孔質層之第1穿通孔導體側之外端而言,位於與第1穿通孔導體相反側即可。In the capacitor of the present invention, in the planar direction, the outer end of the first through-hole conductor side of the insulating region set by the above method is longer than the outer end of the first through-hole conductor side of the porous layer set by the above method. In other words, it suffices to be located on the opposite side to the first through-hole conductor.
本發明之電容器中,例如於電容器之製造時,此處,於電容器陣列之製造時,藉由將絕緣材料充填於多孔質層之內部之空孔中後,利用電漿處理等,將存在於多孔質層之端面近旁的絕緣材料選擇性地去除,從而於面方向調整為:絕緣區域之第1穿通孔導體側之外端較多孔質層之第1穿通孔導體側之外端而言,位於與第1穿通孔導體相反側。In the capacitor of the present invention, for example, during the production of the capacitor, here, during the production of the capacitor array, the insulating material is filled in the pores inside the porous layer, and then plasma treatment is performed. The insulating material near the end surface of the porous layer is selectively removed, so that the surface direction is adjusted to: the outer end of the first through-hole conductor side of the insulating region is larger than the outer end of the first through-hole conductor side of the porous layer, Located on the opposite side to the first through-hole conductor.
於面方向U,絕緣區域之第1穿通孔導體62側之外端E1、與多孔質層34之第1穿通孔導體62側之外端E2之間之距離較佳為大於0 μm、且小於20 μm。In the plane direction U, the distance between the outer end E1 of the insulating region on the first through-hole conductor 62 side and the outer end E2 of the porous layer 34 on the first through-hole conductor 62 side is preferably greater than 0 μm and less than 20 μm.
本發明之電容器中,於多孔質層中,當設定遍及自第1穿通孔導體側之外端至於面方向離開多孔質層之厚度程度之位置為止之範圍的第1區域時,第1區域中之空隙之面積比例較佳為0面積%以上、30面積%以下。In the capacitor of the present invention, when the first region in the porous layer is set to cover the range from the outer end on the side of the first through-hole conductor to a position separated by the thickness of the porous layer in the plane direction, the first region The area ratio of the voids is preferably 0 area% or more and 30 area% or less.
如圖3所示,於多孔質層34中,當設定遍及自第1穿通孔導體62側之外端E2起於面方向U離開多孔質層34之厚度程度之位置P1為止之範圍的第1區域R1時,第1區域R1中之空隙之面積比例較佳為0面積%以上、30面積%以下。即,於多孔質層34之端面近旁之第1區域R1中,內部不包含包括第1穿通孔導體62及絕緣材料34C之所有材料的空隙之面積比例較佳為低至0面積%以上、且30面積%以下。因此,於藉由以鋅酸鹽處理為代表之鍍敷處理來形成與多孔質層34之端面連接之第1穿通孔導體62,更具體而言是陽極連接層68時,通過空隙,多孔質層34之端面近旁被過度蝕刻之情況被抑制。其結果,由殘留於多孔質層34之內部的氯、水等所引起之腐蝕被抑制,因此電容器陣列1之可靠性更提高,而且,構成電容器陣列1之電容器之可靠性更提高。As shown in FIG. 3 , in the porous layer 34 , when the first through-hole conductor 62 side outer end E2 is set to cover the range to a position P1 separated by the thickness of the porous layer 34 in the plane direction U, In the case of region R1, the area ratio of the voids in the first region R1 is preferably 0 area% or more and 30 area% or less. That is, in the first region R1 near the end surface of the porous layer 34, the area ratio of voids excluding all materials including the first through-hole conductor 62 and the insulating material 34C is preferably as low as 0 area % or more, and Less than 30% of area. Therefore, when the first through-hole conductor 62 connected to the end surface of the porous layer 34, more specifically the anode connecting layer 68, is formed by plating treatment represented by zincate treatment, the porous Over-etching near the end surface of layer 34 is suppressed. As a result, corrosion caused by chlorine, water, etc. remaining inside the porous layer 34 is suppressed, so the reliability of the capacitor array 1 is further improved, and the reliability of the capacitors constituting the capacitor array 1 is further improved.
於第1區域R1中之空隙之面積比例大於30面積%之情形時,藉由以鋅酸鹽處理為代表之鍍敷處理來形成與多孔質層34之端面連接之第1穿通孔導體62,更具體而言是陽極連接層68時,藉由通過空隙,多孔質層34之端面近旁被過度蝕刻,而於多孔質層34之內部產生更大之空間。其結果,產生由殘存於多孔質層34之內部之氯、水等所引起之腐蝕,因此電容器陣列1之可靠性下降,而且,構成電容器陣列1之電容器之可靠性下降。When the area ratio of the voids in the first region R1 exceeds 30 area %, the first through-hole conductor 62 connected to the end surface of the porous layer 34 is formed by plating treatment represented by zincate treatment. More specifically, in the case of the anode connection layer 68 , the vicinity of the end surface of the porous layer 34 is over-etched by passing through the voids, thereby creating a larger space inside the porous layer 34 . As a result, corrosion caused by chlorine, water, etc. remaining inside the porous layer 34 occurs, so the reliability of the capacitor array 1 is reduced, and the reliability of the capacitors constituting the capacitor array 1 is also reduced.
第1區域中之空隙之面積比例係相對於如圖2所示之通過自厚度方向觀察時之第1貫通孔之中心且沿著包含多孔質層及第1穿通孔導體之厚度方向的電容器之剖面,例如以如下方式來設定。首先,藉由將電容器切斷,此處將電容器陣列切斷,而使如圖2所示之上述剖面露出。其次,使用掃描型電子顯微鏡,來拍攝電容器之露出剖面,此處,拍攝電容器陣列之露出剖面中的如圖3所示之多孔質層之放大圖像。然後,藉由對所獲得之放大圖像,利用波長分散型X射線分光法來進行元素繪圖,而於多孔質層內確認空隙之存在區域。此時,於多孔質層之端面露出之空隙亦包含於上述空隙之存在區域中。另一方面,利用上述方法來設定多孔質層之第1穿通孔導體側之外端,於多孔質層中,確認遍及自第1穿通孔導體側之外端至於面方向離開多孔質層之厚度程度之位置為止之範圍的第1區域。而且,藉由圖像分析軟體,來測定第1區域中之空隙之存在區域之面積比例。然後,將所測定之面積比例設定為第1區域中之空隙之面積比例。The area ratio of the void in the first region is relative to the capacitor along the thickness direction including the porous layer and the first through-hole conductor as shown in FIG. 2 through the center of the first through-hole when viewed from the thickness direction. The profile is set as follows, for example. First, by cutting off the capacitor, in this case the capacitor array, the above-mentioned cross section as shown in FIG. 2 is exposed. Next, a scanning electron microscope is used to photograph the exposed cross-section of the capacitor. Here, an enlarged image of the porous layer shown in Figure 3 in the exposed cross-section of the capacitor array is photographed. Then, element mapping is performed using wavelength dispersion X-ray spectroscopy on the obtained enlarged image, thereby confirming the region where voids exist within the porous layer. At this time, the voids exposed at the end surface of the porous layer are also included in the region where the voids exist. On the other hand, use the above method to set the outer end of the first through-hole conductor side of the porous layer, and confirm the thickness of the porous layer from the outer end of the first through-hole conductor side to the distance away from the porous layer in the plane direction. The first area of the range up to the position of the degree. Furthermore, the area ratio of the area where the void exists in the first area is measured using image analysis software. Then, the measured area ratio is set as the area ratio of the voids in the first region.
此外,上述方法中,藉由對電容器之露出剖面,進行將掃描型電子顯微鏡及波長分散型X射線分光法加以組合之元素繪圖,來確認空隙之存在區域,但亦可利用將掃描型電子顯微鏡及能量分散型X射線分光法加以組合之元素繪圖等其他分析方法來確認空隙之存在區域。In addition, in the above method, the area where the void exists is confirmed by performing elemental mapping that combines a scanning electron microscope and wavelength dispersion X-ray spectroscopy on the exposed cross section of the capacitor. However, a scanning electron microscope can also be used. Elemental mapping and other analysis methods combined with energy dispersive X-ray spectroscopy are used to confirm the areas where voids exist.
圖3中,作為空隙,示出不包含包括第1穿通孔導體62及絕緣材料34C之所有材料的空孔34V;但於空隙中,除了空孔34V之外,亦包含如第1孔34A、第2孔34B等般包含某種材料之孔之內部,即,未完全充填有材料之空的部分。In FIG. 3 , a void 34V excluding all materials including the first through-hole conductor 62 and the insulating material 34C is shown as the void. However, in addition to the void 34V, the void also includes the first hole 34A, The second hole 34B generally includes the inside of a hole of a certain material, that is, an empty portion that is not completely filled with material.
本發明之電容器中,例如於電容器之製造時,此處,於電容器陣列之製造時,較佳為藉由將絕緣材料充填於多孔質層之內部之空孔中後,利用電漿處理等將存在於多孔質層之端面近旁之絕緣材料選擇性地去除,而將第1區域中之空隙之面積比例調整為0面積%以上、30面積%以下。In the capacitor of the present invention, for example, when manufacturing the capacitor, here, when manufacturing the capacitor array, it is preferable to fill the pores inside the porous layer with an insulating material, and then use plasma treatment or the like to fill the pores. The insulating material present near the end surface of the porous layer is selectively removed, and the area ratio of the voids in the first region is adjusted to 0 area% or more and 30 area% or less.
本發明之電容器中,於多孔質層中,當設定遍及自絕緣區域之與第1穿通孔導體相反側之外端起朝向第1穿通孔導體而於面方向離開多孔質層之厚度程度之位置為止之範圍的第2區域時,第2區域中之空隙之面積比例較佳為大於第1區域中之空隙之面積比例。In the capacitor of the present invention, the porous layer is set to a position extending from the outer end of the insulating region on the opposite side to the first through-hole conductor toward the first through-hole conductor and away from the porous layer in the plane direction. When the area ratio of the voids in the second area is the second area, the area ratio of the voids in the second area is preferably larger than the area ratio of the voids in the first area.
如圖3所示,於多孔質層34中,當設定遍及自絕緣區域之與第1穿通孔導體62相反側之外端E3起朝向第1穿通孔導體62於面方向U離開多孔質層34之厚度程度之位置P2為止之範圍的第2區域R2時,第2區域R2中之空隙之面積比例較佳為大於第1區域R1中之空隙之面積比例。於此情形時,如圖3所示,即使於第2區域R2中存在絕緣區域亦無妨,第2區域R2中之空隙之面積比例大於第1區域R1中之空隙之面積比例。即,雖於第2區域R2中存在絕緣區域,但第2區域R2中之絕緣區域之範圍可以說小於第1區域R1中之絕緣區域之範圍。As shown in FIG. 3 , in the porous layer 34 , when it is set from the outer end E3 of the insulating region on the opposite side to the first through-hole conductor 62 and away from the porous layer 34 in the plane direction U toward the first through-hole conductor 62 When the thickness of the second region R2 is the range from the position P2, the area ratio of the voids in the second region R2 is preferably larger than the area ratio of the voids in the first region R1. In this case, as shown in FIG. 3 , even if there is an insulating region in the second region R2 , the area ratio of the voids in the second region R2 is larger than the area ratio of the voids in the first region R1 . That is, although the insulation region exists in the second region R2, the range of the insulation region in the second region R2 can be said to be smaller than the range of the insulation region in the first region R1.
此處,於將絕緣材料34C充填於第2孔34B中時,例如藉由將絕緣材料34C設置於多孔質層34(介電層35)之表面上,而使絕緣材料34C自多孔質層34之表面起沿著厚度方向T,更具體而言,自多孔質層34之表面朝向芯部32而滲透。Here, when the insulating material 34C is filled in the second hole 34B, for example, the insulating material 34C is provided on the surface of the porous layer 34 (dielectric layer 35 ), so that the insulating material 34C is removed from the porous layer 34 It penetrates along the thickness direction T from the surface, more specifically, from the surface of the porous layer 34 toward the core 32 .
此時,設置於多孔質層34之表面上之絕緣材料34C中,位於與第1穿通孔導體62相反側之部分於多孔質層34之表面上,朝向與第1穿通孔導體62相反側而於面方向U擴展。At this time, of the insulating material 34C provided on the surface of the porous layer 34, the portion located on the opposite side to the first through-hole conductor 62 is on the surface of the porous layer 34 and faces toward the opposite side to the first through-hole conductor 62. Expands in surface direction U.
進而,設置於多孔質層34之表面上之絕緣材料34C中,位於與第1穿通孔導體62相反側的部分於多孔質層34之內部,一邊於厚度方向T滲透,一邊朝向與第1穿通孔導體62相反側而於面方向U滲出。當如上所述般,絕緣材料34C於面方向U滲出時,其滲出寬度自多孔質層34之表面朝向芯部32而減小。藉由以上,作為多孔質層34內之絕緣區域中與第1穿通孔導體62相反側之外端E3近旁之區域,形成絕緣材料34C之滲出區域。Furthermore, of the insulating material 34C provided on the surface of the porous layer 34, the portion located on the opposite side to the first through-hole conductor 62 penetrates into the porous layer 34 in the thickness direction T while facing the first through-hole conductor 62. The hole conductor 62 oozes out in the surface direction U on the opposite side. When the insulating material 34C oozes out in the plane direction U as described above, its infiltration width decreases from the surface of the porous layer 34 toward the core 32 . As a result, an exuded region of the insulating material 34C is formed as a region near the outer end E3 on the opposite side to the first through-hole conductor 62 among the insulating regions in the porous layer 34 .
如上所述,雖於第2區域R2中存在絕緣區域,但存在於第2區域R2中之絕緣區域包含絕緣材料34C之滲出區域。因此,第2區域R2中之絕緣區域之範圍小於第1區域R1中之絕緣區域之範圍。即,第2區域R2中之空隙之面積比例大於第1區域R1中之空隙之面積比例。As described above, although the insulating region exists in the second region R2, the insulating region existing in the second region R2 includes the exuded region of the insulating material 34C. Therefore, the range of the insulation region in the second region R2 is smaller than the range of the insulation region in the first region R1. That is, the area ratio of the voids in the second region R2 is larger than the area ratio of the voids in the first region R1.
根據以上,於第2區域R2中之空隙之面積比例大於第1區域R1中之空隙之面積比例之情形時,可以說於第2區域R2中存在利用上述方法來形成之絕緣材料34C之滲出區域。Based on the above, when the area ratio of the voids in the second region R2 is greater than the area ratio of the voids in the first region R1, it can be said that there is an exudation region of the insulating material 34C formed by the above method in the second region R2. .
第2區域中之空隙之面積比例係相對於如圖2所示之通過自厚度方向觀察時之第1貫通孔之中心且沿著包含多孔質層及第1穿通孔導體之厚度方向的電容器之剖面,例如以如下方式來設定。首先,利用上述方法,於多孔質層內確認空隙之存在區域。另一方面,利用上述方法,於多孔質層內確認絕緣區域,於面方向,將絕緣區域之位於最靠與第1穿通孔導體相反側的端部設定為絕緣區域之與第1穿通孔導體相反側之外端。而且,多孔質層中,確認遍及自絕緣區域之與第1穿通孔導體相反側之外端朝向第1穿通孔導體而於面方向離開多孔質層之厚度程度之位置為止之範圍的第2區域。而且,利用圖像分析軟體來測定第2區域中之空隙之存在區域之面積比例。然後,將所測定之面積比例設定為第2區域中之空隙之面積比例。The area ratio of the void in the second region is relative to the capacitor along the thickness direction including the porous layer and the first through-hole conductor when viewed through the center of the first through-hole as shown in FIG. 2 The cross section is set as follows, for example. First, the area where voids exist is confirmed in the porous layer using the above method. On the other hand, using the above method, an insulating region is confirmed in the porous layer, and the end of the insulating region located on the opposite side to the first through-hole conductor in the plane direction is set as the end of the insulating region and the first through-hole conductor. The outer end on the opposite side. Furthermore, in the porous layer, a second region covering the range from the outer end of the insulating region on the opposite side to the first through-hole conductor to the position facing the first through-hole conductor and separated in the plane direction by the thickness of the porous layer is confirmed. . Furthermore, image analysis software is used to measure the area ratio of the area where the void exists in the second area. Then, the measured area ratio is set as the area ratio of the voids in the second region.
相對於第2區域R2中之空隙之面積比例,第1區域R1中之空隙之面積比例較佳為大於0%、且小於80%。Relative to the area ratio of the voids in the second region R2, the area ratio of the voids in the first region R1 is preferably greater than 0% and less than 80%.
圖3中雖未示出,但於多孔質層34中,除第1孔34A、第2孔34B以及空孔34V以外,亦可存在內部包含第1穿通孔導體62及絕緣材料34C以外之材料、例如固體電解質層36A之孔。Although not shown in FIG. 3 , in addition to the first hole 34A, the second hole 34B, and the void 34V, the porous layer 34 may also contain materials other than the first through-hole conductor 62 and the insulating material 34C. , such as the holes of the solid electrolyte layer 36A.
本發明之電容器中較佳為,穿通孔導體進一步包括第2穿通孔導體,其設置於在厚度方向貫通設置有第1穿通孔導體之電容器部的第2貫通孔之至少內壁面上,且第2穿通孔導體電氣連接於陰極層。In the capacitor of the present invention, it is preferable that the through-hole conductor further includes a second through-hole conductor provided on at least the inner wall surface of the second through-hole of the capacitor portion in which the first through-hole conductor is provided, and 2 The through-hole conductor is electrically connected to the cathode layer.
圖4係表示包含沿著圖1中之線段B1-B2之剖面的電容器陣列之剖面之一例的剖面示意圖。此外,圖4中之線段B1-B2係與圖1中之線段B1-B2對應。FIG. 4 is a schematic cross-sectional view showing an example of a cross-section of the capacitor array along the line segment B1-B2 in FIG. 1 . In addition, the line segment B1-B2 in Figure 4 corresponds to the line segment B1-B2 in Figure 1 .
如圖4所示,電容器陣列1,更具體而言是構成電容器陣列1之電容器較佳為進一步具有第2穿通孔導體64。As shown in FIG. 4 , the capacitor array 1 , more specifically the capacitors constituting the capacitor array 1 , preferably further includes a second through-hole conductor 64 .
如圖4所示,第2穿通孔導體64係以於電容器層10之厚度方向T貫通電容器部30之方式來設置。更具體而言,第2穿通孔導體64較佳為設置於在厚度方向T貫通圖2等中所示之設置有第1穿通孔導體62之電容器部30的第2貫通孔65之至少內壁面上。As shown in FIG. 4 , the second through-hole conductor 64 is provided to penetrate the capacitor portion 30 in the thickness direction T of the capacitor layer 10 . More specifically, the second through-hole conductor 64 is preferably provided on at least the inner wall surface of the second through-hole 65 penetrating the capacitor portion 30 shown in FIG. 2 and the like in which the first through-hole conductor 62 is provided in the thickness direction T. superior.
如圖4所示,第2穿通孔導體64較佳為電氣連接於陰極層36。此處,圖4所示之例中,導電部40設置於第2穿通孔導體64之表面上,可作為電容器陣列1,更具體而言,可作為電容器部30之連接端子來發揮功能。又,圖4所示之例中,通孔導體42係以於厚度方向T貫通絕緣部25而與導電部40及陰極層36連接之方式來設置。因此,圖4所示之例中,第2穿通孔導體64經由導電部40及通孔導體42而電氣連接於陰極層36。於此情形時,電容器陣列1可小型化,而且,構成電容器陣列1之電容器可小型化。As shown in FIG. 4 , the second through-hole conductor 64 is preferably electrically connected to the cathode layer 36 . Here, in the example shown in FIG. 4 , the conductive portion 40 is provided on the surface of the second through-hole conductor 64 and functions as the capacitor array 1 , more specifically, as a connection terminal of the capacitor portion 30 . In the example shown in FIG. 4 , the via-hole conductor 42 is provided so as to penetrate the insulating portion 25 in the thickness direction T and connect to the conductive portion 40 and the cathode layer 36 . Therefore, in the example shown in FIG. 4 , the second through-hole conductor 64 is electrically connected to the cathode layer 36 via the conductive portion 40 and the through-hole conductor 42 . In this case, the capacitor array 1 can be miniaturized, and the capacitors constituting the capacitor array 1 can also be miniaturized.
第2穿通孔導體64例如以如下方式來形成。首先,藉由對欲形成第2穿通孔導體64之部分進行鑽孔加工、雷射加工等,而形成貫通孔。其次,藉由於所形成之貫通孔中充填第2絕緣部25B之構成材料(例如樹脂材料),而形成絕緣層。然後,藉由對所形成之絕緣層進行鑽孔加工、雷射加工等,而形成第2貫通孔65。此時,藉由使第2貫通孔65之直徑小於絕緣層之直徑,而成為於剛才形成之貫通孔與第2貫通孔65之間存在第2絕緣部25B之構成材料的狀態。然後,藉由利用銅、金、銀等低電阻之金屬,將第2貫通孔65之內壁面進行金屬化,而形成第2穿通孔導體64。形成第2穿通孔導體64時,例如,藉由利用無電解鍍銅處理、電解鍍銅處理等,將第2貫通孔65之內壁面進行金屬化,則加工變得容易。此外,關於形成第2穿通孔導體64之方法,除了將第2貫通孔65之內壁面進行金屬化之方法以外,亦可為將金屬、金屬與樹脂之複合材料等充填於第2貫通孔65中之方法。The second through-hole conductor 64 is formed as follows, for example. First, a through hole is formed by performing drilling processing, laser processing, etc. on the portion where the second through-hole conductor 64 is to be formed. Next, the formed through-hole is filled with the constituent material of the second insulating portion 25B (for example, a resin material) to form an insulating layer. Then, the second through hole 65 is formed by drilling, laser processing, or the like on the formed insulating layer. At this time, by making the diameter of the second through hole 65 smaller than the diameter of the insulating layer, the constituent material of the second insulating portion 25B is present between the just formed through hole and the second through hole 65 . Then, the second through-hole conductor 64 is formed by metallizing the inner wall surface of the second through-hole 65 with a low-resistance metal such as copper, gold, or silver. When forming the second through-hole conductor 64 , for example, by metallizing the inner wall surface of the second through-hole 65 using electroless copper plating, electrolytic copper plating, or the like, processing becomes easier. In addition, as for the method of forming the second through-hole conductor 64, in addition to the method of metallizing the inner wall surface of the second through-hole 65, the second through-hole 65 may also be filled with metal, a composite material of metal and resin, or the like. method.
導電部40之構成材料例如可舉銀、金、銅等低電阻之金屬。於此情形時,導電部40係例如藉由對第2穿通孔導體64之表面進行鍍敷處理而形成。Examples of the constituent material of the conductive portion 40 include low-resistance metals such as silver, gold, and copper. In this case, the conductive portion 40 is formed by, for example, plating the surface of the second through-hole conductor 64 .
為了提高導電部40與其他構件之間之密接性,此處,提高導電部40與第2穿通孔導體64之間之密接性,亦可使用選自由銀填料、銅填料、鎳填料及碳填料所組成之群組中之至少1種導電性填料與樹脂的混合材料,來作為導電部40之構成材料。In order to improve the adhesion between the conductive part 40 and other components, here, to improve the adhesion between the conductive part 40 and the second through-hole conductor 64, a filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler may also be used. A mixed material of at least one conductive filler and resin in the group is used as the constituent material of the conductive portion 40 .
通孔導體42之構成材料例如可舉與導電部40之構成材料相同者。The through-hole conductor 42 may be made of the same material as the conductive part 40 , for example.
通孔導體42例如係藉由對以於厚度方向T貫通絕緣部25之方式來設置之貫通孔,對內壁面進行鍍敷處理,或於充填導電性膏後進行熱處理而形成。The through-hole conductor 42 is formed, for example, by plating the inner wall surface of a through-hole provided so as to penetrate the insulating portion 25 in the thickness direction T, or by performing heat treatment after filling the conductive paste.
電容器陣列1,更具體而言是構成電容器陣列1之電容器較佳為如圖1及圖4所示,進一步具有於第2貫通孔65中充填樹脂材料而成之第2樹脂充填部29B。圖1及圖4所示之例中,第2樹脂充填部29B設置於第2貫通孔65之內壁面上之由第2穿通孔導體64所包圍之空間中。若藉由設置第2樹脂充填部29B,第2貫通孔65內之空間消除,則第2穿通孔導體64之分層之發生被抑制。The capacitor array 1, more specifically, the capacitors constituting the capacitor array 1 are preferably as shown in FIGS. 1 and 4, and further have a second resin filling portion 29B in which the second through hole 65 is filled with a resin material. In the example shown in FIGS. 1 and 4 , the second resin filling portion 29B is provided in the space surrounded by the second through-hole conductor 64 on the inner wall surface of the second through-hole 65 . If the space in the second through-hole 65 is eliminated by providing the second resin filling portion 29B, the occurrence of delamination of the second through-hole conductor 64 is suppressed.
第2樹脂充填部29B之熱膨脹率較佳為大於第2穿通孔導體64之熱膨脹率。更具體而言,充填於第2貫通孔65中之樹脂材料之熱膨脹率較佳為大於第2穿通孔導體64之構成材料(例如銅)之熱膨脹率。於此情形時,藉由充填於第2樹脂充填部29B中,更具體而言,充填於第2貫通孔65中之樹脂材料於高溫環境下膨脹,第2穿通孔導體64自第2貫通孔65之內側朝向外側而緊壓於第2貫通孔65之內壁面,因此第2穿通孔導體64之分層之發生充分被抑制。The thermal expansion coefficient of the second resin filled portion 29B is preferably greater than the thermal expansion coefficient of the second through-hole conductor 64 . More specifically, the thermal expansion coefficient of the resin material filled in the second through-hole conductor 65 is preferably greater than the thermal expansion coefficient of the constituent material of the second through-hole conductor 64 (for example, copper). In this case, since the resin material filled in the second resin filling part 29B, more specifically, the second through hole 65 expands in a high temperature environment, the second through hole conductor 64 passes from the second through hole The inner side of 65 faces outward and is pressed against the inner wall surface of the second through-hole 65, so the occurrence of delamination of the second through-hole conductor 64 is sufficiently suppressed.
第2樹脂充填部29B之熱膨脹率可與第2穿通孔導體64之熱膨脹率相同,亦可小於第2穿通孔導體64之熱膨脹率。更具體而言,充填於第2貫通孔65中之樹脂材料之熱膨脹率可與第2穿通孔導體64之構成材料之熱膨脹率相同,亦可小於第2穿通孔導體64之構成材料之熱膨脹率。The thermal expansion coefficient of the second resin filling portion 29B may be the same as the thermal expansion coefficient of the second through-hole conductor 64, or may be smaller than the thermal expansion coefficient of the second through-hole conductor 64. More specifically, the thermal expansion coefficient of the resin material filled in the second through-hole 65 may be the same as the thermal expansion coefficient of the material constituting the second through-hole conductor 64 , or may be smaller than the thermal expansion coefficient of the material constituting the second through-hole conductor 64 . .
電容器陣列1,更具體而言是構成電容器陣列1之電容器亦可不具有第2樹脂充填部29B。於此情形時,第2穿通孔導體64較佳為不僅設置於第2貫通孔65之內壁面上,而且設置於第2貫通孔65之內部整體。The capacitor array 1, more specifically the capacitors constituting the capacitor array 1, may not have the second resin filling portion 29B. In this case, the second through-hole conductor 64 is preferably provided not only on the inner wall surface of the second through-hole 65 but also on the entire interior of the second through-hole 65 .
本發明之電容器中較佳為,電容器層進一步具有:設置於電容器部之表面上之第1絕緣部、以及設置於第1絕緣部之表面上之第2絕緣部,且第2絕緣部於陽極板與第2穿通孔導體之間延伸存在。In the capacitor of the present invention, it is preferable that the capacitor layer further includes: a first insulating part provided on the surface of the capacitor part, and a second insulating part provided on the surface of the first insulating part, and the second insulating part is provided on the anode. Extends between the board and the second through-hole conductor.
與圖2同樣,如圖4所示,電容器層10較佳為進一步具有設置於電容器部30之表面上之絕緣部25。Like FIG. 2 , as shown in FIG. 4 , the capacitor layer 10 preferably further has an insulating portion 25 provided on the surface of the capacitor portion 30 .
與圖2同樣,如圖4所示,絕緣部25較佳為包括:設置於電容器部30之表面上之第1絕緣部25A、以及設置於第1絕緣部25A之表面上之第2絕緣部25B。Like FIG. 2 , as shown in FIG. 4 , the insulating part 25 preferably includes a first insulating part 25A provided on the surface of the capacitor part 30 and a second insulating part provided on the surface of the first insulating part 25A. 25B.
即,電容器層10較佳為進一步具有:設置於電容器部30之表面上之第1絕緣部25A、以及設置於第1絕緣部25A之表面上之第2絕緣部25B。That is, the capacitor layer 10 preferably further includes the first insulating part 25A provided on the surface of the capacitor part 30 and the second insulating part 25B provided on the surface of the first insulating part 25A.
於電容器層10具有第1絕緣部25A及第2絕緣部25B之情形時,如圖4所示,第2絕緣部25B較佳為於陽極板31與第2穿通孔導體64之間延伸存在。圖4所示之例中,第2絕緣部25B與陽極板31及第2穿通孔導體64之兩者接觸。藉由第2絕緣部25B於陽極板31與第2穿通孔導體64之間延伸存在,則陽極板31與第2穿通孔導體64之間之絕緣性,而且陽極板31與陰極層36之間之絕緣性得到確保,防止兩者間之短路。When the capacitor layer 10 has the first insulating part 25A and the second insulating part 25B, as shown in FIG. 4 , the second insulating part 25B is preferably extended between the anode plate 31 and the second through-hole conductor 64 . In the example shown in FIG. 4 , the second insulating portion 25B is in contact with both the anode plate 31 and the second through-hole conductor 64 . By the second insulating portion 25B extending between the anode plate 31 and the second through-hole conductor 64, the insulation between the anode plate 31 and the second through-hole conductor 64 is improved, and the insulation between the anode plate 31 and the cathode layer 36 is improved. The insulation is ensured and short circuit between the two is prevented.
於第2絕緣部25B於陽極板31與第2穿通孔導體64之間延伸存在之情形時,如圖4所示,較佳為在與第2絕緣部25B接觸之陽極板31之端面,露出芯部32及多孔質層34。於此情形時,藉由第2絕緣部25B與多孔質層34之接觸面積增大,兩者間之密接性提高,因此第2絕緣部25B與多孔質層34之間之剝離等不良情況難以產生。When the second insulating portion 25B extends between the anode plate 31 and the second through-hole conductor 64, as shown in FIG. 4, it is preferable to expose the end surface of the anode plate 31 that is in contact with the second insulating portion 25B. core 32 and porous layer 34 . In this case, since the contact area between the second insulating part 25B and the porous layer 34 is increased, the adhesion between the two is improved, so that defects such as peeling between the second insulating part 25B and the porous layer 34 are less likely to occur. produce.
於在與第2絕緣部25B接觸之陽極板31之端面,露出芯部32及多孔質層34之情形時,較佳為藉由於多孔質層34之空孔中充填絕緣材料34C,如圖4所示,絕緣材料34C所存在之絕緣區域設置於第2穿通孔導體64之周圍。於此情形時,陽極板31與第2穿通孔導體64之間之絕緣性,而且陽極板31與陰極層36之間之絕緣性充分得到確保,充分防止兩者間之短路。When the core portion 32 and the porous layer 34 are exposed on the end surface of the anode plate 31 that is in contact with the second insulating portion 25B, it is preferable to fill the pores in the porous layer 34 with the insulating material 34C, as shown in Figure 4 As shown, the insulating area where the insulating material 34C exists is provided around the second through-hole conductor 64 . In this case, the insulation between the anode plate 31 and the second through-hole conductor 64 and the insulation between the anode plate 31 and the cathode layer 36 are sufficiently ensured, and short circuit between them is fully prevented.
於在與第2絕緣部25B接觸之陽極板31之端面,露出芯部32及多孔質層34之情形時,第2絕緣部25B之構成材料較佳為進入多孔質層34之空孔中。於此情形時,多孔質層34之機械強度提高,而且由多孔質層34之空孔所引起之分層之發生被抑制。When the core portion 32 and the porous layer 34 are exposed on the end surface of the anode plate 31 that is in contact with the second insulating portion 25B, it is preferable that the constituent material of the second insulating portion 25B enters the pores of the porous layer 34. In this case, the mechanical strength of the porous layer 34 is improved, and the occurrence of delamination caused by the pores in the porous layer 34 is suppressed.
第2絕緣部25B之熱膨脹率較佳為大於第2穿通孔導體64之熱膨脹率。更具體而言,第2絕緣部25B之構成材料之熱膨脹率較佳為大於第2穿通孔導體64之構成材料(例如銅)之熱膨脹率。於此情形時,藉由第2絕緣部25B,更具體而言,第2絕緣部25B之構成材料於高溫環境下膨脹,則多孔質層34及第2穿通孔導體64被緊壓,因此分層之發生充分被抑制。The thermal expansion coefficient of the second insulating portion 25B is preferably greater than the thermal expansion coefficient of the second through-hole conductor 64 . More specifically, the thermal expansion coefficient of the material constituting the second insulating portion 25B is preferably greater than the thermal expansion coefficient of the material (for example, copper) of the second through-hole conductor 64 . In this case, when the second insulating part 25B, more specifically, the material constituting the second insulating part 25B expands in a high-temperature environment, the porous layer 34 and the second through-hole conductor 64 are compressed, so that they are separated. The occurrence of layers is fully suppressed.
第2絕緣部25B之熱膨脹率可與第2穿通孔導體64之熱膨脹率相同,亦可小於第2穿通孔導體64之熱膨脹率。更具體而言,第2絕緣部25B之構成材料之熱膨脹率可與第2穿通孔導體64之構成材料之熱膨脹率相同,亦可小於第2穿通孔導體64之構成材料之熱膨脹率。The thermal expansion coefficient of the second insulating part 25B may be the same as the thermal expansion coefficient of the second through-hole conductor 64, or may be smaller than the thermal expansion coefficient of the second through-hole conductor 64. More specifically, the thermal expansion coefficient of the material constituting the second insulating portion 25B may be the same as that of the material constituting the second through-hole conductor 64 , or may be smaller than the thermal expansion coefficient of the material constituting the second through-hole conductor 64 .
本發明之電容器例如用於複合電子零件。如上所述之複合電子零件例如具有:本發明之電容器、設置於本發明之電容器之外側且與陽極板及陰極層分別電氣連接之外部電極、以及與外部電極電氣連接之電子零件。The capacitor of the present invention is used, for example, in composite electronic components. The composite electronic component as described above includes, for example, the capacitor of the present invention, an external electrode provided outside the capacitor of the present invention and electrically connected to the anode plate and the cathode layer respectively, and an electronic component electrically connected to the external electrode.
複合電子零件中,與外部電極電氣連接之電子零件可為被動元件,亦可為主動元件,亦可為被動元件及主動元件之兩者,亦可為被動元件及主動元件之複合體。Among composite electronic components, the electronic components electrically connected to the external electrodes can be passive components, active components, both passive components and active components, or a composite of passive components and active components.
被動元件例如可舉電感器等。Examples of passive components include inductors.
主動元件可舉:記憶體、GPU(Graphical Processing Unit,圖形處理器)、CPU(Central Processing Unit,中央處理器)、MPU(Micro Processing Unit,微處理器)、PMIC(Power Management IC,電源管理IC)等。Examples of active components include: memory, GPU (Graphical Processing Unit, graphics processor), CPU (Central Processing Unit, central processing unit), MPU (Micro Processing Unit, microprocessor), PMIC (Power Management IC, power management IC) )wait.
於本發明之電容器用於複合電子零件之情形時,例如,本發明之電容器如上所述,作為用以構裝電子零件之基板來處理。因此,藉由將本發明之電容器整體設為片材狀,進而,將構裝於本發明之電容器中之電子零件設為片材狀,可經由在厚度方向貫通電子零件之穿通孔導體,而將本發明之電容器與電子零件於厚度方向電氣連接。其結果,可將作為電子零件之被動元件及主動元件構成為總括之模組。When the capacitor of the present invention is used in a composite electronic component, for example, the capacitor of the present invention is used as a substrate for constructing the electronic component as described above. Therefore, by forming the entire capacitor of the present invention into a sheet shape, and further forming the electronic components included in the capacitor of the present invention into a sheet form, it is possible to pass through-hole conductors penetrating the electronic components in the thickness direction. The capacitor of the present invention and the electronic component are electrically connected in the thickness direction. As a result, passive components and active components as electronic components can be constructed as an integrated module.
例如,藉由在包含半導體主動元件之電壓調節器、與供給經轉換之直流電壓之負荷之間,電氣連接本發明之電容器,可形成開關調節器。For example, a switching regulator can be formed by electrically connecting a capacitor of the present invention between a voltage regulator containing semiconductor active components and a load supplying a converted DC voltage.
複合電子零件中,亦可於布局有複數個本發明之電容器的電容器矩陣片材之一個主面形成電路層之後,將該電路層電氣連接於作為電子零件之被動元件或主動元件。In composite electronic components, a circuit layer may be formed on one main surface of a capacitor matrix sheet on which a plurality of capacitors of the present invention are arranged, and then the circuit layer may be electrically connected to a passive component or an active component of the electronic component.
又,亦可於預先設置於基板上之空腔部中配置本發明之電容器,以樹脂埋入後,於該樹脂上形成電路層。於該基板之其他空腔部中,亦可搭載作為其他電子零件之被動元件或主動元件。Alternatively, the capacitor of the present invention may be disposed in a cavity previously provided on the substrate, embedded in resin, and then a circuit layer may be formed on the resin. Passive components or active components that are other electronic components can also be mounted in other cavities of the substrate.
或者,亦可將本發明之電容器構裝於晶圓、玻璃等平滑之載體上,形成包含樹脂之外層部後,形成電路層,然後將該電路層電氣連接於作為電子零件之被動元件或主動元件。Alternatively, the capacitor of the present invention may be mounted on a smooth carrier such as a wafer or glass. After forming an outer layer including resin, a circuit layer may be formed, and then the circuit layer may be electrically connected to a passive component or active component as an electronic component. element.
1:電容器陣列 10:電容器層 20、40:導電部 25:絕緣部 25A:第1絕緣部 25B:第2絕緣部 29A:第1樹脂充填部 29B:第2樹脂充填部 30:電容器部 31:陽極板 32:芯部 34:多孔質層 34A:第1孔 34B:第2孔 34C:絕緣材料 34V:空孔 35:介電層 36:陰極層 36A:固體電解質層 36B:導電體層 42:通孔導體 60:穿通孔導體 62:第1穿通孔導體 63:第1貫通孔 64:第2穿通孔導體 65:第2貫通孔 68:陽極連接層 68A:第1陽極連接層 68B:第2陽極連接層 E1:絕緣區域之第1穿通孔導體側之外端 E2:多孔質層之第1穿通孔導體側之外端 E3:絕緣區域之與第1穿通孔導體相反側之外端 P1:自多孔質層之第1穿通孔導體側之外端至於面方向離開多孔質層之厚度程度之位置 P2:自絕緣區域之與第1穿通孔導體相反側之外端起朝向第1穿通孔導體而於面方向離開多孔質層之厚度程度之位置 R1:第1區域 R2:第2區域 T:厚度方向 U:面方向 1: Capacitor array 10: Capacitor layer 20, 40: Conductive part 25:Insulation Department 25A: 1st insulation part 25B: 2nd insulation part 29A: 1st resin filling part 29B: 2nd resin filling part 30:Capacitor Department 31:Anode plate 32: Core 34: Porous layer 34A: Hole 1 34B: Hole 2 34C: Insulating materials 34V: empty hole 35: Dielectric layer 36:Cathode layer 36A: Solid electrolyte layer 36B: Conductor layer 42:Through hole conductor 60:Through hole conductor 62: 1st through-hole conductor 63: 1st through hole 64: 2nd through-hole conductor 65: 2nd through hole 68: Anode connection layer 68A: 1st anode connection layer 68B: 2nd anode connection layer E1: The outer end of the first through-hole conductor side of the insulation area E2: The outer end of the first through-hole conductor side of the porous layer E3: The outer end of the insulation area opposite to the first through-hole conductor P1: From the outer end of the first through-hole conductor side of the porous layer to the position separated from the porous layer in the surface direction by the thickness of the porous layer P2: A position starting from the outer end of the insulating region on the opposite side to the first through-hole conductor and facing the first through-hole conductor and away from the porous layer in the surface direction by the thickness of the porous layer R1: Region 1 R2: Region 2 T: Thickness direction U:face direction
[圖1]係表示本發明之電容器之一例設為陣列狀之電容器陣列的立體示意圖。 [圖2]係表示包含沿著圖1中之線段A1-A2之剖面的電容器陣列之剖面之一例的剖面示意圖。 [圖3]係表示將圖2中之區域Z放大之狀態的剖面示意圖。 [圖4]係表示包含沿著圖1中之線段B1-B2之剖面的電容器陣列之剖面之一例的剖面示意圖。 [Fig. 1] is a schematic perspective view showing a capacitor array in the form of an array as an example of the capacitor of the present invention. 2 is a schematic cross-sectional view showing an example of a cross-section of a capacitor array including a cross-section along line segment A1-A2 in FIG. 1 . [Fig. 3] is a schematic cross-sectional view showing an enlarged state of the area Z in Fig. 2. [Fig. FIG. 4 is a schematic cross-sectional view showing an example of a cross-section of the capacitor array including a cross-section along the line segment B1-B2 in FIG. 1 .
25A:第1絕緣部 25A: 1st insulation part
29A:第1樹脂充填部 29A: 1st resin filling part
31:陽極板 31:Anode plate
32:芯部 32: Core
34:多孔質層 34: Porous layer
34A:第1孔 34A: Hole 1
34B:第2孔 34B: Hole 2
34C:絕緣材料 34C: Insulating materials
34V:空孔 34V: empty hole
36:陰極層 36:Cathode layer
36A:固體電解質層 36A: Solid electrolyte layer
36B:導電體層 36B: Conductor layer
62:第1穿通孔導體 62: 1st through-hole conductor
68:陽極連接層 68: Anode connection layer
68A:第1陽極連接層 68A: 1st anode connection layer
68B:第2陽極連接層 68B: 2nd anode connection layer
E1:絕緣區域之第1穿通孔導體側之外端 E1: The outer end of the first through-hole conductor side of the insulation area
E2:多孔質層之第1穿通孔導體側之外端 E2: The outer end of the first through-hole conductor side of the porous layer
E3:絕緣區域之與第1穿通孔導體相反側之外端 E3: The outer end of the insulation area opposite to the first through-hole conductor
P1:自多孔質層之第1穿通孔導體側之外端至於面方向離開多孔質層之厚度程度之位置 P1: From the outer end of the first through-hole conductor side of the porous layer to the position separated from the porous layer in the surface direction by the thickness of the porous layer
P2:自絕緣區域之與第1穿通孔導體相反側之外端起朝向第1穿通孔導體而於面方向離開多孔質層之厚度程度之位置 P2: A position starting from the outer end of the insulating region on the opposite side to the first through-hole conductor and facing the first through-hole conductor and away from the porous layer in the surface direction by the thickness of the porous layer
R1:第1區域 R1: Region 1
R2:第2區域 R2: Region 2
T:厚度方向 T: Thickness direction
U:面方向 U:face direction
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JP2008078301A (en) * | 2006-09-20 | 2008-04-03 | Fujitsu Ltd | Capacitor built-in wiring board and manufacturing method thereof |
JP2012124281A (en) * | 2010-12-07 | 2012-06-28 | Tdk Corp | Wiring board, printed circuit board with built-in electronic component, method of manufacturing wiring board, and method of manufacturing printed circuit board with built-in electronic component |
TW202036619A (en) * | 2019-03-29 | 2020-10-01 | 日商村田製作所股份有限公司 | Capacitor array and composite electronic component |
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JP2008078301A (en) * | 2006-09-20 | 2008-04-03 | Fujitsu Ltd | Capacitor built-in wiring board and manufacturing method thereof |
JP2012124281A (en) * | 2010-12-07 | 2012-06-28 | Tdk Corp | Wiring board, printed circuit board with built-in electronic component, method of manufacturing wiring board, and method of manufacturing printed circuit board with built-in electronic component |
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