TWI830807B - Plate processing method - Google Patents
Plate processing method Download PDFInfo
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- TWI830807B TWI830807B TW108140392A TW108140392A TWI830807B TW I830807 B TWI830807 B TW I830807B TW 108140392 A TW108140392 A TW 108140392A TW 108140392 A TW108140392 A TW 108140392A TW I830807 B TWI830807 B TW I830807B
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- thermocompression bonding
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- 238000003672 processing method Methods 0.000 title claims abstract description 15
- 235000012431 wafers Nutrition 0.000 claims abstract description 98
- 238000000034 method Methods 0.000 claims abstract description 74
- 238000010438 heat treatment Methods 0.000 claims abstract description 48
- 230000010354 integration Effects 0.000 claims abstract description 17
- 230000011218 segmentation Effects 0.000 claims abstract description 6
- -1 polyethylene Polymers 0.000 claims description 41
- 238000005520 cutting process Methods 0.000 claims description 40
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 20
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 20
- 239000004698 Polyethylene Substances 0.000 claims description 14
- 229920000573 polyethylene Polymers 0.000 claims description 14
- 239000004743 Polypropylene Substances 0.000 claims description 11
- 229920001155 polypropylene Polymers 0.000 claims description 11
- 239000004793 Polystyrene Substances 0.000 claims description 10
- 229920000728 polyester Polymers 0.000 claims description 10
- 229920000098 polyolefin Polymers 0.000 claims description 10
- 229920002223 polystyrene Polymers 0.000 claims description 9
- 238000002679 ablation Methods 0.000 claims description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000011900 installation process Methods 0.000 abstract description 4
- 238000002844 melting Methods 0.000 abstract description 4
- 230000008018 melting Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- UHPJWJRERDJHOJ-UHFFFAOYSA-N ethene;naphthalene-1-carboxylic acid Chemical compound C=C.C1=CC=C2C(C(=O)O)=CC=CC2=C1 UHPJWJRERDJHOJ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/388—Trepanning, i.e. boring by moving the beam spot about an axis
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
- B26D1/01—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work
- B26D1/12—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis
- B26D1/14—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis with a circular cutting member, e.g. disc cutter
- B26D1/143—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis with a circular cutting member, e.g. disc cutter rotating about a stationary axis
- B26D1/15—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis with a circular cutting member, e.g. disc cutter rotating about a stationary axis with vertical cutting member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
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- Life Sciences & Earth Sciences (AREA)
- Forests & Forestry (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
[課題]提供即使在一邊保護晶圓或CSP基板等板狀物的表面一邊進行分割的情形下，亦不會使生產效率惡化的板狀物的加工方法。 [解決手段]藉由本發明，提供一種板狀物加工方法，其係至少由以下所構成：支持構件配設工程，其係在被加工物(10)的背面(10b)配設支持構件；薄片配設工程，其係在該支持構件配設工程之前、或後，在被加工物(10)的表面(10a)舖設熱壓接薄片(20)，進行加熱而熱壓接；分割工程，其係將分割手段定位在應分割的區域而連同熱壓接薄片(20)一起將被加工物(10)分割成各個晶片；一體化工程，其係使對應各個晶片而被分割的熱壓接薄片(20)加熱且熔融，將在分割工程中被分割的熱壓接薄片(20)連結而一體化；及剝離工程，其係將已一體化的熱壓接薄片(20)由被加工物(10)剝離。[Problem] To provide a method for processing plate-shaped objects such as wafers and CSP substrates without deteriorating production efficiency even when dividing the plate-shaped objects such as wafers and CSP substrates while protecting their surfaces. [Solution] The present invention provides a plate-shaped object processing method, which is composed of at least the following: a support member arrangement process in which a support member is arranged on the back surface (10b) of the workpiece (10); and a thin sheet The installation process involves laying a thermocompression bonding sheet (20) on the surface (10a) of the workpiece (10) before or after the support member installation process, and heating and thermocompression bonding; the segmentation process includes The dividing means is positioned in the area to be divided and the workpiece (10) is divided into individual wafers together with the thermocompression bonding sheet (20); the integration process is to make the thermocompression bonding sheet divided corresponding to each wafer. (20) heating and melting to connect and integrate the thermocompression bonded sheets (20) divided in the dividing process; and a peeling process in which the integrated thermocompression bonded sheets (20) are separated from the workpiece ( 10) Peel off.
Description
本發明係關於將板狀的被加工物分割成各個晶片的板狀物加工方法的發明。 The present invention relates to a method for processing a plate-shaped object by dividing a plate-shaped workpiece into individual wafers.
藉由分割預定線區劃IC、LSI等複數元件而形成在表面的板狀的晶圓、或藉由分割預定線區劃CSP(Chip Size Package，晶片尺寸封裝體)而形成在表面的CSP基板係藉由具備切削刀的切割裝置、雷射加工裝置等而被分割成各個晶片，且被利用在行動電話、個人電腦等電氣機器。 A plate-shaped wafer is formed on the surface by dividing a plurality of components such as IC and LSI along scheduled lines, or a CSP (Chip Size Package) is formed on the surface by dividing scheduled lines. A CSP substrate is formed on the surface. It is divided into individual wafers by a dicing device equipped with a cutting blade, a laser processing device, etc., and is used in electrical equipment such as mobile phones and personal computers.
若藉由切割裝置，沿著晶圓或CSP基板的分割預定線進行切削時，切削屑會附著晶圓或CSP基板的表面而將元件或CSP污染。同樣地，若藉由雷射加工裝置，對晶圓或CSP基板的分割預定線照射雷射光線而施行燒蝕加工時，碎屑會飛散而將元件或CSP污染。為了保護元件的表面免於該等污染，已提案出在晶圓或CSP基板的表面貼接保護膠帶而保護元件的表面免於因切削屑、或碎屑所致之污染(參照例如專利文獻1)。 If the cutting device is used to cut along the planned division lines of the wafer or CSP substrate, cutting chips will adhere to the surface of the wafer or CSP substrate and contaminate the components or CSP. Similarly, if a laser processing device is used to irradiate laser light onto the planned division lines of the wafer or CSP substrate to perform ablation processing, debris will fly and contaminate the components or CSP. In order to protect the surface of the component from such contamination, it has been proposed to affix protective tape to the surface of the wafer or CSP substrate to protect the surface of the component from contamination caused by cutting chips or debris (see, for example, Patent Document 1 ).
[專利文獻1] 日本特開2007-134390號公報 [Patent Document 1] Japanese Patent Application Publication No. 2007-134390
如上所述，當施行藉由切割裝置、或雷射加工裝置所為之加工時，在晶圓或CSP基板的表面配設保護膠帶，連同保護膠帶一起施行對晶圓或CSP基板的分割加工，藉此可保護元件或CSP免於因切削屑或碎屑所致之污染。但是，若在晶圓或CSP基板的表面貼接有保護膠帶的狀態下分割成各個晶片，被貼接在表面的保護膠帶亦按每個晶片被個片化，且必須在施行分割加工之後，將由各個晶片的表面被個片化的保護膠帶一個一個剝離，作業極為困難，且生產效率明顯降低。 As mentioned above, when processing by a cutting device or a laser processing device, a protective tape is placed on the surface of the wafer or CSP substrate, and the wafer or CSP substrate is divided together with the protective tape. This protects the component or CSP from contamination caused by chips or debris. However, if the wafer or CSP substrate is divided into individual wafers with a protective tape attached to the surface, the protective tape attached to the surface is also individualized for each wafer, and the dividing process must be performed. It is extremely difficult to peel off the individualized protective tapes on the surface of each wafer one by one, and the production efficiency is significantly reduced.
本發明係鑑於上述事實而完成者，其主要技術課題在提供即使在一邊保護晶圓或CSP基板等板狀物的表面一邊進行分割的情形下，亦不會使生產效率惡化的板狀物的加工方法。 The present invention was completed in view of the above-mentioned facts, and its main technical subject is to provide a plate-shaped object that does not deteriorate production efficiency even when dividing a plate-shaped object such as a wafer or a CSP substrate while protecting its surface. processing method.
為解決上述主要技術課題，藉由本發明，提供一種板狀物加工方法，其係將板狀的被加工物分割成各個晶片的板狀物加工方法，其至少由以下所構成：支持構 件配設工程，其係在被加工物的背面配設支持構件；薄片配設工程，其係在該支持構件配設工程之前、或後，在被加工物的表面舖設熱壓接薄片，進行加熱而熱壓接；分割工程，其係將分割手段定位在應分割的區域而連同該熱壓接薄片一起將被加工物分割成各個晶片；一體化工程，其係使對應各個晶片而被分割的熱壓接薄片加熱且熔融，將在分割工程中被分割的熱壓接薄片連結而一體化；及剝離工程，其係將已一體化的熱壓接薄片由被加工物剝離。 In order to solve the above-mentioned main technical problems, the present invention provides a plate-shaped object processing method, which is a plate-shaped object processing method that divides a plate-shaped workpiece into individual wafers, and is composed of at least the following: a support structure. The component arranging process involves arranging supporting members on the back side of the workpiece; the sheet arranging process involves laying thermocompression bonding sheets on the surface of the workpiece before or after the supporting member arranging process. Heating and thermocompression bonding; division process, which is to position the dividing means in the area to be divided and divide the workpiece into individual wafers together with the thermocompression bonding sheet; integration process, which is to divide each wafer correspondingly The thermocompression bonding sheet is heated and melted to connect and integrate the thermocompression bonding sheets divided in the dividing process; and the peeling process is to peel the integrated thermocompression bonding sheet from the workpiece.
該分割工程係可旋轉地配備在外周具有切刃的切削刀的切削手段、或照射雷射光線而對被加工物施行燒蝕加工的雷射光線照射手段的任一者。此外，被加工物係可形成為藉由分割預定線區劃複數元件且形成在表面的晶圓。 This dividing process is either a cutting means equipped with a cutting blade rotatably having a cutting edge on the outer periphery, or a laser beam irradiation means that irradiates a laser beam to perform ablation processing on the workpiece. In addition, the object to be processed may be a wafer in which a plurality of elements are divided by dividing lines and formed on the surface.
較佳為該熱壓接薄片係由聚烯烴系的薄片、或聚酯系的薄片中作選擇。 It is preferable that the thermocompression bonding sheet is selected from a polyolefin-based sheet or a polyester-based sheet.
該聚烯烴系的薄片係可由聚乙烯薄片、聚丙烯薄片、聚苯乙烯薄片之任一者中作選擇。較佳為在該薄片配設工程中，由聚烯烴系的薄片中作選擇的熱壓接薄片為聚乙烯薄片時的加熱溫度為120℃~140℃，為聚丙烯薄片時的加熱溫度為160℃~180℃，為聚苯乙烯薄片時的加熱溫度為220℃~240℃，在該一體化工程中，該熱壓接薄片為聚乙烯薄片時的加熱溫度為160℃以上，為聚丙烯薄片時的加熱溫度為200℃以上，為聚苯乙烯薄片時的加熱溫度為260℃以上。 The polyolefin-based sheet can be selected from polyethylene sheets, polypropylene sheets, and polystyrene sheets. In the sheet arrangement process, it is preferable that the heating temperature of the thermocompression bonding sheet selected from polyolefin-based sheets is 120°C to 140°C when it is a polyethylene sheet, and 160°C when it is a polypropylene sheet. ℃ ~ 180 ℃, when it is a polystyrene sheet, the heating temperature is 220 ℃ ~ 240 ℃. In this integration project, when the thermocompression bonding sheet is a polyethylene sheet, the heating temperature is above 160 ℃, which is a polypropylene sheet. The heating temperature for polystyrene sheets is 200°C or above, and the heating temperature for polystyrene sheets is 260°C or above.
該聚酯系薄片係可由聚對苯二甲酸乙二酯薄片、或聚對萘二甲酸乙二酯薄片中作選擇。較佳為在該薄片配設工程中，由聚酯系的薄片中作選擇的熱壓接薄片為聚對苯二甲酸乙二酯薄片時的加熱溫度為250℃~270℃，為聚對萘二甲酸乙二酯薄片時的加熱溫度為160℃~180℃，在該一體化工程中，該熱壓接薄片為聚對苯二甲酸乙二酯薄片時的加熱溫度為290℃以上，為聚對萘二甲酸乙二酯薄片時的加熱溫度為200℃以上。 The polyester sheet can be selected from polyethylene terephthalate sheet or polyethylene terephthalate sheet. In the sheet arrangement process, it is preferable that the heating temperature of the thermocompression bonding sheet selected from polyester-based sheets is 250°C to 270°C when the polyethylene terephthalate sheet is polyparanaphthalene. When the thermocompression bonding sheet is a polyethylene terephthalate sheet, the heating temperature is 160°C to 180°C. In this integration project, the heating temperature when the thermocompression bonding sheet is a polyethylene terephthalate sheet is above 290°C, which is a polyethylene terephthalate sheet. The heating temperature for ethylene naphthalate flakes is 200°C or above.
本發明之板狀物加工方法係至少由以下所構成：支持構件配設工程，其係在被加工物的背面配設支持構件；薄片配設工程，其係在該支持構件配設工程之前、或後，在被加工物的表面舖設熱壓接薄片，進行加熱而熱壓接；分割工程，其係將分割手段定位在應分割的區域而連同該熱壓接薄片一起將被加工物分割成各個晶片；一體化工程，其係使對應各個晶片而被分割的熱壓接薄片加熱且熔融，將在分割工程中被分割的熱壓接薄片連結而一體化；及剝離工程，其係將已一體化的熱壓接薄片由被加工物剝離，藉此，可防止切削屑、或碎屑附著在晶圓、或CSP基板等板狀物的表面而污染，並且將按每個經分割的元件晶片、或CSP晶片被個片化的熱壓接薄片連結而總括剝離。藉此，不需要將經個片化的熱壓接薄片由各個元件晶片或CSP晶片一個一個剝離，不會有使生產性惡化的情 形。 The plate-shaped object processing method of the present invention is composed of at least the following: a support member arrangement process, which is to arrange the support member on the back side of the workpiece; a sheet arrangement process, which is before the support member arrangement process. Or, a thermocompression bonding sheet is laid on the surface of the workpiece, heated and thermocompression bonded; the dividing process is to position the dividing means in the area to be divided and divide the workpiece into pieces together with the thermocompression bonding sheet. each wafer; an integration process in which the thermocompression bonding sheets divided corresponding to each wafer are heated and melted, and the thermocompression bonding sheets divided in the division process are connected and integrated; and a peeling process in which the thermocompression bonding sheets divided in the division process are The integrated thermocompression-bonded sheet is peeled off from the workpiece. This prevents cutting chips or debris from adhering to the surface of plate-shaped objects such as wafers or CSP substrates and contaminating them, and separates each divided component. Wafers or CSP wafers are connected by individualized thermocompression bonding sheets and are collectively peeled off. This eliminates the need to peel individualized thermocompression-bonded sheets from each element wafer or CSP wafer one by one, and does not deteriorate productivity. shape.
10:晶圓 10:wafer
10a:表面 10a: Surface
10b:背面 10b: Back
12:元件 12:Component
12’:元件晶片 12’: component chip
14:分割預定線 14: Split scheduled line
20:熱壓接薄片 20:Hot-compression bonding sheet
30:熱壓接裝置 30:Thermocompression bonding device
32:加熱滾輪 32:Heated roller
34:旋轉軸 34:Rotation axis
40:切割裝置 40: Cutting device
41:心軸單元 41: Spindle unit
42:旋轉心軸 42: Rotating mandrel
43:切削刀 43:Cutter
44:刀蓋 44:Knife cover
45:切削水供給手段 45: Cutting water supply means
50:雷射加工裝置 50:Laser processing device
52:雷射光線照射手段 52: Laser light irradiation method
52a:聚光器 52a: Concentrator
60:一體化用加熱手段 60: Integrated heating means
100:分割溝 100: dividing ditch
110:雷射加工溝 110: Laser processing trench
F:框架 F:frame
T:切割膠帶 T: cutting tape
W:熱風 W: hot air
圖1係晶圓、及熱壓接薄片的斜視圖。 Figure 1 is a perspective view of a wafer and a thermocompression bonded sheet.
圖2係顯示薄片配設工程的實施態樣的斜視圖。 FIG. 2 is a perspective view showing how the sheet installation process is carried out.
圖3係顯示支持構件配設工程的實施態樣的斜視圖。 Fig. 3 is a perspective view showing an implementation state of the support member arrangement process.
圖4(a)係顯示藉由切割裝置所實施的分割工程的實施態樣的斜視圖，(b)係顯示藉由雷射加工裝置所實施的分割工程的實施態樣的斜視圖。 FIG. 4(a) is a perspective view showing an implementation aspect of the dividing process performed by the cutting device, and (b) is a perspective view showing an implementation aspect of the dividing process implemented by the laser processing device.
圖5係藉由分割工程被分割後的晶圓的斜視圖。 FIG. 5 is a perspective view of the wafer divided by the dividing process.
圖6係顯示一體化工程的實施態樣的斜視圖。 FIG. 6 is a perspective view showing an implementation state of the integrated project.
圖7係顯示剝離工程的實施態樣的斜視圖。 FIG. 7 is a perspective view showing how the stripping process is carried out.
以下參照所附圖示，更加詳細說明根據本發明所構成的板狀物加工方法的實施形態。 Hereinafter, embodiments of the plate-shaped object processing method according to the present invention will be described in more detail with reference to the accompanying drawings.
實施本實施形態時，首先，如圖1所示，以板狀的被加工物而言，準備由半導體(例如Si)所成的晶圓10、及熱壓接薄片20。晶圓10係藉由分割預定線14區劃複數元件12且形成在晶圓10的表面10a側的晶圓。 When implementing this embodiment, first, as a plate-shaped workpiece, a wafer 10 made of a semiconductor (for example, Si) and a thermocompression bonding sheet 20 are prepared as shown in FIG. 1 . The wafer 10 is a wafer in which a plurality of elements 12 are divided by planned division lines 14 and formed on the surface 10 a side of the wafer 10 .
熱壓接薄片20係由適於熱壓接的素材中作選 擇。適於熱壓接的素材係指以由藉由加熱至預定的溫度範圍而軟化而發揮黏著性的素材中作選擇為佳。更具體而言，可由聚烯烴系的薄片、或聚酯系的薄片中作選擇。 The thermocompression bonding sheet 20 is selected from materials suitable for thermocompression bonding. Choose. Materials suitable for thermocompression bonding are preferably selected from materials that are softened by heating to a predetermined temperature range and exhibit adhesiveness. More specifically, a polyolefin-based sheet or a polyester-based sheet can be selected.
更具體而言，若由聚烯烴系的薄片中選擇熱壓接薄片20，以選自聚乙烯(PE)薄片、聚丙烯(PP)薄片、聚苯乙烯(PS)薄片之任一者為佳。此外，若由聚酯系的薄片中選擇熱壓接薄片20，以選自聚對苯二甲酸乙二酯(PET)薄片、聚對萘二甲酸乙二酯(PEN)薄片的任一者為佳。其中，在以下說明的實施形態中，以熱壓接薄片20而言，形成為選擇聚乙烯薄片者來接續說明。 More specifically, if the thermocompression bonding sheet 20 is selected from polyolefin-based sheets, it is preferably selected from the group consisting of polyethylene (PE) sheets, polypropylene (PP) sheets, and polystyrene (PS) sheets. . In addition, if the thermocompression bonding sheet 20 is selected from polyester sheets, any one selected from the group consisting of polyethylene terephthalate (PET) sheets and polyethylene terephthalate (PEN) sheets may be used. good. In the embodiment described below, a polyethylene sheet is selected as the thermocompression bonding sheet 20 and the description will be continued.
若如上述備妥晶圓10、及熱壓接薄片20，如圖1所示，在晶圓10的表面10a舖設熱壓接薄片20。接著，搬送至圖2所示之熱壓接裝置30(省略全體圖)。熱壓接裝置30係具備：可以旋轉軸34為中心進行旋轉地予以保持的加熱滾輪32、及未圖示之保持平台。在加熱滾輪32的表面係塗敷有氟樹脂。在加熱滾輪32的內部係內置有電熱器及溫度感測器(省略圖示)，藉由另外準備的控制裝置，將加熱滾輪32的表面調整為所希望的溫度。加熱滾輪32係可一邊以旋轉軸34為中心進行旋轉，一邊沿著平坦形成之未圖示之保持平台的保持面而以預定方向(以箭號表示)移動。若將晶圓10搬送至熱壓接裝置30，將晶圓10之舖設有熱壓接薄片20之面朝向上方，且載置於未圖示之保持平台的保持面。接著，如圖2所示，將舖設在晶圓10的表面10a的熱壓接薄片20側，一邊以加熱滾輪32按壓一邊加熱，且一邊 以旋轉軸34為中心使加熱滾輪32旋轉，一邊沿著熱壓接薄片20的表面而以箭號所示方向移動。此時，藉由加熱滾輪32，熱壓接薄片20係以120℃~140℃的範圍予以加熱。該溫度係構成熱壓接薄片20的聚乙烯薄片的熔點近傍的溫度，但是以熱壓接薄片20不會過度熔融的程度的溫度而且軟化而發揮黏著性的溫度進行設定。藉由如上所示，熱壓接薄片20被熱壓接在晶圓10的表面10a全體，薄片配設工程即完成。 Once the wafer 10 and the thermocompression bonding sheet 20 are prepared as described above, as shown in FIG. 1 , the thermocompression bonding sheet 20 is laid on the surface 10 a of the wafer 10 . Next, it is transferred to the thermocompression bonding device 30 shown in FIG. 2 (the overall view is omitted). The thermocompression bonding device 30 includes a heating roller 32 that is held so as to be rotatable around a rotation axis 34, and a holding platform (not shown). The surface of the heating roller 32 is coated with fluororesin. An electric heater and a temperature sensor (not shown) are built into the heating roller 32, and the surface of the heating roller 32 is adjusted to a desired temperature by a separately prepared control device. The heating roller 32 can move in a predetermined direction (indicated by an arrow) along a flat holding surface of a holding platform (not shown) while rotating about the rotation axis 34 . When the wafer 10 is transported to the thermocompression bonding device 30 , the surface of the wafer 10 on which the thermocompression bonding sheet 20 is laid faces upward and is placed on the holding surface of a holding platform (not shown). Next, as shown in FIG. 2 , the thermocompression bonding sheet 20 side laid on the surface 10 a of the wafer 10 is heated while being pressed by the heating roller 32 . The heating roller 32 is rotated around the rotating shaft 34 and moves in the direction indicated by the arrow along the surface of the thermocompression bonding sheet 20 . At this time, the thermocompression bonding sheet 20 is heated in the range of 120°C to 140°C by the heating roller 32 . This temperature is a temperature close to the melting point of the polyethylene sheet constituting the thermocompression bonding sheet 20, but is set to a temperature at which the thermocompression bonding sheet 20 does not melt excessively and softens to exhibit adhesiveness. As shown above, the thermocompression bonding sheet 20 is thermocompression bonded to the entire surface 10a of the wafer 10, and the sheet placement process is completed.
若上述薄片配設工程完成，如圖3的上段所示，準備由在表面具黏著性的切割膠帶T、及保持切割膠帶T的環狀的框架F所成的支持構件，且在晶圓10的背面10b側貼接切割膠帶T的中央部。藉此，如圖3的下段所示，成為在晶圓10配設有支持構件的狀態。 After the above-mentioned wafer arrangement process is completed, as shown in the upper part of FIG. 3 , a supporting member composed of a dicing tape T having adhesiveness on the surface and an annular frame F holding the dicing tape T is prepared, and is placed on the wafer 10 The back 10b side is attached to the center part of the cutting tape T. Thereby, as shown in the lower part of FIG. 3 , the supporting member is arranged on the wafer 10 .
其中，在本實施形態中，如上所述，在薄片配設工程之後，實施支持構件配設工程，但是本發明並非限定於此。亦即，亦可在實施薄片配設工程之前，實施支持構件配設工程。更具體而言，首先，實施在將熱壓接薄片20進行熱壓接之前的晶圓10的背面10b貼接切割膠帶T，藉由環狀的框架F來支持晶圓10的支持構件配設工程。之後，實施在晶圓10的表面10a舖設熱壓接薄片20，且使用上述之熱壓接裝置30，將熱壓接薄片加熱而熱壓接在晶圓10的表面10a的薄片配設工程。藉此，與上述實施形態同 樣地，可得熱壓接薄片20被熱壓接在晶圓10的表面10a，而且透過切割膠帶T而被支持在環狀的框架F的晶圓10。 In this embodiment, as described above, the support member placement process is performed after the sheet placement process, but the present invention is not limited to this. That is, the support member placement process may be performed before the sheet placement process is performed. More specifically, first, the dicing tape T is attached to the back surface 10 b of the wafer 10 before the thermocompression bonding sheet 20 is thermocompression bonded, and the supporting member arrangement is performed to support the wafer 10 with the annular frame F. project. Thereafter, a sheet arrangement process is performed in which the thermocompression bonding sheet 20 is laid on the surface 10 a of the wafer 10 , and the thermocompression bonding device 30 is used to heat the thermocompression bonding sheet 20 and thermocompression bond it to the surface 10 a of the wafer 10 . In this way, the same as the above embodiment In this way, the thermocompression bonding sheet 20 is thermocompression bonded to the surface 10 a of the wafer 10 , and the wafer 10 is supported on the annular frame F through the dicing tape T.
如上所述，若薄片配設工程及支持構件配設工程完成，實施將分割手段定位在應分割的區域而連同熱壓接薄片20一起將晶圓10分割成各個晶片的分割工程。以下一邊參照圖4一邊說明分割工程的實施態樣。 As described above, after the sheet arrangement process and the support member arrangement process are completed, the dividing process is performed to position the dividing means in the area to be divided and divide the wafer 10 into individual wafers together with the thermocompression bonding sheet 20 . The execution aspect of the division process will be described below with reference to FIG. 4 .
連同熱壓接薄片20一起將晶圓10分割成各個晶片的分割工程係藉由例如圖4(a)所示之切割裝置40(僅顯示一部分)來實現。如圖4(a)所示，切割裝置40係具備有心軸單元41。心軸單元41係具備有：被固定在旋轉心軸42的前端部且在外周具有切刃的切削刀43、及保護切削刀43的刀蓋44。切削刀43係構成為可連同旋轉心軸42一起旋轉。在刀蓋44係在鄰接切削刀43的位置配設有切削水供給手段45，且朝向藉由切削刀43所得之晶圓10的切削位置供給切削水。藉由切削刀43來實施切削時，係使用未圖示之對準手段，進行切削刀43、與形成在被保持在未圖示之保持平台的晶圓10的表面10a側的分割預定線14的對位(對準)。在該對準手段係至少配備有未圖示之紅外線照明手段、及紅外線攝像手段，構成為可對晶圓10的表面10a的分割預定線14，由熱壓接薄片20側進行攝像、檢測。 The division process of dividing the wafer 10 into individual wafers together with the thermocompression bonding sheet 20 is realized by, for example, the cutting device 40 shown in FIG. 4(a) (only a part is shown). As shown in FIG. 4(a) , the cutting device 40 is provided with a spindle unit 41. The spindle unit 41 is provided with a cutting blade 43 which is fixed to the front end of the rotating spindle 42 and has a cutting edge on the outer periphery, and a blade cover 44 which protects the cutting blade 43 . The cutting blade 43 is configured to rotate together with the rotating spindle 42 . The blade cover 44 is provided with a cutting water supply means 45 at a position adjacent to the cutting blade 43 to supply cutting water toward the cutting position of the wafer 10 obtained by the cutting blade 43 . When cutting is performed by the cutting blade 43, an alignment means (not shown) is used to align the cutting blade 43 with the planned division line 14 formed on the surface 10a side of the wafer 10 held on a holding platform (not shown). of alignment (alignment). The alignment means is equipped with at least an infrared illumination means (not shown) and an infrared imaging means, and is configured to image and detect the planned division line 14 on the surface 10a of the wafer 10 from the thermocompression bonding sheet 20 side.
若已實施藉由該對準手段所為之對準，使連同旋轉心軸42一起被高速旋轉的切削刀43，定位在保持在 未圖示之保持平台的晶圓10的分割預定線14所對應的位置而下降而切入，且使晶圓10對切削刀43以箭號X所示之X軸方向(加工進給方向)移動。藉此，形成沿著分割預定線14將晶圓10切削而分割的分割溝100。該分割溝100係將晶圓10完全分割的溝槽，連同晶圓10一起亦將熱壓接薄片20分割。藉由未圖示之移動手段，一邊使保持晶圓10的保持平台，以X軸方向、及與X軸方向呈正交的Y軸方向適當移動，一邊對晶圓10的全部分割預定線14，實施上述藉由切削刀43所為之切削加工。藉此，如圖5所示，沿著晶圓10的全部分割預定線14形成分割溝100，且將晶圓10連同熱壓接薄片20一起分割。藉由以上，分割工程即完成。 If the alignment by this alignment means is performed, the cutting blade 43 rotated at high speed together with the rotating mandrel 42 is positioned to remain in the position. The holding platform (not shown) is lowered to a position corresponding to the planned division line 14 of the wafer 10 to cut, and the wafer 10 is moved toward the cutting blade 43 in the X-axis direction (processing feed direction) indicated by arrow X. . Thereby, the division trench 100 is formed by cutting and dividing the wafer 10 along the planned division line 14 . The dividing groove 100 is a groove that completely divides the wafer 10 and also divides the thermocompression bonding sheet 20 together with the wafer 10 . By moving means not shown in the figure, all the planned division lines 14 of the wafer 10 are moved while appropriately moving the holding platform holding the wafer 10 in the X-axis direction and the Y-axis direction orthogonal to the X-axis direction. , the above-mentioned cutting process by the cutting blade 43 is performed. Thereby, as shown in FIG. 5 , division grooves 100 are formed along all planned division lines 14 of the wafer 10 , and the wafer 10 is divided together with the thermocompression bonding sheet 20 . With the above, the segmentation project is completed.
在本發明中所實施的分割工程並非限定於藉由圖4(a)所示之切割裝置40來實施，亦可例如使用圖4(b)所示之雷射加工裝置50(僅顯示一部分)來實施。以下說明藉由雷射加工裝置50所實施的分割工程。 The segmentation process carried out in the present invention is not limited to being carried out by the cutting device 40 shown in Figure 4(a). For example, the laser processing device 50 shown in Figure 4(b) can also be used (only a part is shown). to implement. The division process performed by the laser processing device 50 will be described below.
如圖4(b)所示，雷射加工裝置50係具備有雷射光線照射手段52。雷射光線照射手段52係具備有：包含未圖示之雷射光線振盪器的光學系，且具備有將由雷射光線振盪器被振盪的雷射光線聚光的聚光器52a。雷射光線照射手段52係以照射對晶圓10具吸收性的波長的雷射光線且實施燒蝕加工的方式設定雷射加工條件。藉由雷射光線照射手段52來實施分割工程之前，使用未圖示之對準手段，進行藉由聚光器52a被照射的雷射光線LB的照射位置、及形成在被保持在未圖示之保持平台的晶圓10的表面 10a側的分割預定線14的對位(對準)。在該對準手段係配備有未圖示之紅外線照明手段及紅外線攝像手段，構成為可將晶圓10的表面10a的分割預定線14由熱壓接薄片20側進行攝像、檢測。 As shown in FIG. 4(b) , the laser processing device 50 is equipped with a laser beam irradiation means 52. The laser beam irradiation means 52 includes an optical system including a laser beam oscillator (not shown), and a condenser 52a that condenses the laser beam oscillated by the laser beam oscillator. The laser beam irradiation means 52 sets the laser processing conditions so that the wafer 10 is irradiated with a laser beam of a wavelength that is absorptive and ablation processing is performed. Before the division process is carried out by the laser beam irradiation means 52, an alignment means (not shown) is used to determine the irradiation position of the laser light LB irradiated by the condenser 52a and to form a position maintained at a position (not shown). The surface of the wafer 10 that holds the platform Positioning (alignment) of the planned division line 14 on the 10a side. The alignment means is equipped with an infrared illumination means and an infrared imaging means (not shown), and is configured to image and detect the planned division line 14 on the surface 10 a of the wafer 10 from the thermocompression bonding sheet 20 side.
若已實施藉由該對準手段所為之對準，將聚光器52a定位在保持在未圖示之保持平台的晶圓10的分割預定線14所對應的位置，且將聚光點定位在晶圓10的預定位置。接著，使雷射光線照射手段52作動，並且使晶圓10對聚光器52a以箭號X所示之X軸方向(加工進給方向)移動。藉此，形成將晶圓10進行燒蝕加工而分割的雷射加工溝110。該雷射加工溝110係將晶圓10完全分割的溝槽，連同晶圓10一起亦將熱壓接薄片20分割。藉由未圖示之移動手段，使保持晶圓10的保持平台，以X軸方向、及與X軸方向呈正交的Y軸方向適當移動，一邊實施上述之藉由雷射光線照射手段52所為之燒蝕加工。藉此，沿著晶圓10的全部分割預定線14形成雷射加工溝110，且將晶圓10連同熱壓接薄片20一起分割。 After the alignment by this alignment means has been performed, the light collector 52a is positioned at a position corresponding to the planned dividing line 14 of the wafer 10 held on a holding platform (not shown), and the light focusing point is positioned at Predetermined position of wafer 10. Next, the laser beam irradiation means 52 is actuated, and the wafer 10 is moved in the X-axis direction (processing feed direction) indicated by arrow X with respect to the condenser 52a. Thereby, the laser-processed grooves 110 are formed by dividing the wafer 10 by ablation processing. The laser processed groove 110 is a groove that completely divides the wafer 10 and also divides the thermocompression bonding sheet 20 together with the wafer 10 . By using a moving means not shown in the figure, the holding platform holding the wafer 10 is appropriately moved in the X-axis direction and the Y-axis direction orthogonal to the X-axis direction, while performing the above-mentioned laser light irradiation means 52 This is done by ablation processing. Thereby, the laser processing grooves 110 are formed along all the planned division lines 14 of the wafer 10 , and the wafer 10 is divided together with the thermocompression bonding sheet 20 .
即使在藉由上述切割裝置40、雷射加工裝置50之任一者進行分割的情形下，亦由於晶圓10的表面10a被熱壓接薄片20所保護，因此防止元件12因切削屑、或碎屑而被污染的情形。 Even when the wafer 10 is divided by any one of the cutting device 40 and the laser processing device 50, the surface 10a of the wafer 10 is protected by the thermocompression bonding sheet 20, thereby preventing the component 12 from being damaged by cutting chips, or contamination due to debris.
若已實施上述分割工程，實施使對應元件12而被分割 成各個的熱壓接薄片20加熱熔融而連結且一體化的一體化工程。一邊參照圖6，一邊更加具體說明該一體化工程。 If the above-mentioned segmentation process has been implemented, the corresponding component 12 will be segmented. The individual thermocompression bonding sheets 20 are heated, melted, connected and integrated in an integrated process. This integration process will be described in more detail with reference to FIG. 6 .
如圖5所示，藉由分割工程，連同晶圓10一起，熱壓接薄片20亦對應元件12而被分割成各個。將該晶圓10，連同由框架F及切割膠帶T所成之支持構件一起定位在圖6所示之一體化用加熱手段60的下方。一體化用加熱手段60係在內部內置有電熱器、及風扇，構成為將預定溫度的熱風W朝向下方噴射。在本實施形態中，熱壓接薄片20係選擇聚乙烯薄片，將熱壓接薄片20加熱至超過聚乙烯薄片的熔點溫度的160℃以上。因此，由一體化用加熱手段60被噴射的熱風W的溫度係被設定為熱壓接薄片20本身成為160℃以上(例如200℃)。由一體化用加熱手段60噴射如上所示所設定的熱風W而以預定時間加熱，藉此，熱壓接薄片20成為熔點以上的溫度而熔融。亦即，如圖6的下段所示，藉由先實施的分割工程所形成的分割溝100因熱壓接薄片20熔融而消滅且被連結而一體化，再次成為一枚薄片。其中，並非藉由一體化用加熱手段60進行加熱的溫度愈高愈好，較佳為加熱至熱壓接薄片20過度熔化而由晶圓10的外緣伸出且不會流出至切割膠帶T側的程度的溫度。藉由以上，一體化工程即完成。 As shown in FIG. 5 , through the dividing process, together with the wafer 10 , the thermocompression bonding sheet 20 is also divided into individual parts corresponding to the components 12 . The wafer 10 is positioned below the integrated heating means 60 shown in FIG. 6 together with the supporting member composed of the frame F and the dicing tape T. The integrated heating means 60 has an electric heater and a fan built inside, and is configured to spray hot air W of a predetermined temperature downward. In this embodiment, a polyethylene sheet is selected as the thermocompression bonding sheet 20, and the thermocompression bonding sheet 20 is heated to 160° C. or higher exceeding the melting point temperature of the polyethylene sheet. Therefore, the temperature of the hot air W sprayed by the integration heating means 60 is set so that the thermocompression bonding sheet 20 itself becomes 160° C. or higher (for example, 200° C.). The hot air W set as above is sprayed from the integration heating means 60 and heated for a predetermined time, whereby the thermocompression bonding sheet 20 reaches a temperature equal to or higher than the melting point and is melted. That is, as shown in the lower part of FIG. 6 , the dividing grooves 100 formed by the previously performed dividing process are melted and eliminated by the thermocompression bonding sheet 20 and are connected and integrated to become one sheet again. Among them, the temperature for heating by the integrated heating means 60 is not as high as possible, but is preferably heated until the thermocompression bonding sheet 20 is excessively melted and protrudes from the outer edge of the wafer 10 without flowing out to the dicing tape T. side temperature. With the above, the integration project is completed.
如上所述，若使分割溝100消滅而連結的一體化工程已完成，如圖7所示，實施將經一體化的熱壓接薄片20由 晶圓10的表面10a剝離的剝離工程。將經一體化的熱壓接薄片20由晶圓10剝離的具體手段並未特別限定，但是若在熱壓接薄片20上黏貼剝離用的黏著膠帶，且連同該黏著膠帶一起由晶圓10剝離熱壓接薄片20即可。藉由如上所示實施剝離工程，在切割膠帶T上，晶圓10以被分割成各個元件晶片12’的狀態下露出。 As described above, once the integration process of eliminating the dividing groove 100 and connecting it is completed, as shown in FIG. 7 , the integrated thermocompression bonding sheet 20 is The peeling process of peeling off the surface 10a of the wafer 10. The specific means for peeling the integrated thermocompression bonding sheet 20 from the wafer 10 is not particularly limited. However, if an adhesive tape for peeling is affixed to the thermocompression bonding sheet 20 and the adhesive tape is peeled from the wafer 10 Just heat and press 20 sheets. By performing the peeling process as described above, the wafer 10 is exposed on the dicing tape T in a state of being divided into individual element wafers 12'.
若如以上所示已實施剝離工程，將晶圓10搬送至由切割膠帶T拾取元件晶片12’的拾取工程，或搬送至連同切割膠帶T及框架F一起收容的未圖示之匣盒來進行收容。 If the peeling process has been performed as described above, the wafer 10 is transferred to the picking process of picking up the component wafer 12' by the dicing tape T, or to a cassette (not shown) that contains the dicing tape T and the frame F. containment.
其中，在上述實施形態中，係將熱壓接薄片20設為聚乙烯薄片，惟本發明並非限定於此，可由聚烯烴系的薄片、或聚酯系的薄片中適當選擇。 In the above embodiment, the thermocompression bonding sheet 20 is a polyethylene sheet, but the present invention is not limited thereto, and may be appropriately selected from a polyolefin-based sheet or a polyester-based sheet.
若將熱壓接薄片20由聚烯烴系的薄片中作選擇，具體而言，除了聚乙烯薄片之外，可由聚丙烯薄片、聚苯乙烯薄片之任一者中作選擇。 If the thermocompression bonding sheet 20 is selected from a polyolefin-based sheet, specifically, it may be selected from a polypropylene sheet or a polystyrene sheet in addition to a polyethylene sheet.
若選擇出聚丙烯薄片作為熱壓接薄片20，較佳為將在薄片配設工程中進行加熱時的溫度設為160℃~180℃，將在一體化工程中加熱時的溫度設為200℃以上。此外，若選擇出聚苯乙烯薄片作為熱壓接薄片20，較佳為將在薄片配設工程中加熱時的溫度設為220℃~240℃，將在一體化工程中加熱時的溫度設為260℃以上。 If a polypropylene sheet is selected as the thermocompression bonding sheet 20, it is preferable to set the heating temperature in the sheet arrangement process to 160°C to 180°C, and to set the heating temperature in the integration process to 200°C. above. In addition, if a polystyrene sheet is selected as the thermocompression bonding sheet 20, it is preferable to set the temperature during heating in the sheet arrangement process to 220°C to 240°C, and to set the temperature during heating in the integration process to 220°C to 240°C. Above 260℃.
若將熱壓接薄片20設為聚酯系的薄片，具體而言，可由聚對苯二甲酸乙二酯薄片、或聚對萘二甲酸乙 二酯薄片中作選擇。 If the thermocompression bonding sheet 20 is a polyester sheet, specifically, it may be made of polyethylene terephthalate sheet or polyethylene terephthalate. Choose from diester flakes.
若選擇出聚對苯二甲酸乙二酯薄片作為熱壓接薄片20，較佳為將在薄片配設工程中加熱時的溫度設為250℃~270℃，將在一體化工程中加熱時的溫度設為290℃以上。此外，若選擇出聚對萘二甲酸乙二酯薄片作為熱壓接薄片20，較佳為將在薄片配設工程中加熱時的溫度設為160℃~180℃，將在一體化工程中加熱時的溫度設為200℃以上。 If a polyethylene terephthalate sheet is selected as the thermocompression bonding sheet 20, it is preferable to set the temperature during heating in the sheet arrangement process to 250°C to 270°C, and to set the temperature during heating in the integration process. The temperature is set above 290°C. In addition, if a polyethylene terephthalate sheet is selected as the thermocompression bonding sheet 20, it is preferable to set the heating temperature in the sheet arrangement process to 160°C to 180°C, and to set the heating temperature in the integration process. The temperature is set to above 200℃.
在上述實施形態中，將成為加工的對象的板狀物，形成為藉由分割預定線14區劃圓盤形狀的複數元件12且形成在晶圓10的表面10a側的晶圓10，惟本發明並非限定於此，亦可為藉由分割預定線區劃複數CSP且形成在表面的矩形狀的CSP基板。 In the above-described embodiment, the plate-like object to be processed is formed into the wafer 10 with the plurality of disc-shaped elements 12 divided by the planned division lines 14 and formed on the surface 10 a side of the wafer 10 . However, the present invention It is not limited to this, and it may be a rectangular CSP substrate in which a plurality of CSPs are divided by planned dividing lines and formed on the surface.
10:晶圓 10:wafer
20:熱壓接薄片 20:Hot-compression bonding sheet
60:一體化用加熱手段 60: Integrated heating means
100:分割溝 100: dividing ditch
F:框架 F:frame
T:切割膠帶 T: cutting tape
W:熱風 W: hot air
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002155249A (en) * | 2000-11-22 | 2002-05-28 | Mitsui Chemicals Inc | Adhesive tape for processing wafer and method for producing the same and method for using the same |
| TW200807536A (en) * | 2006-07-28 | 2008-02-01 | Tokyo Ohka Kogyo Co Ltd | Wafer bonding method, thinning method and detaching method |
| JP2009193825A (en) * | 2008-02-14 | 2009-08-27 | Toyota Central R&D Labs Inc | Composite electrolyte membrane and its manufacturing method |
| JP2014135424A (en) * | 2013-01-11 | 2014-07-24 | Disco Abrasive Syst Ltd | Wafer cutting method |
| TW201810507A (en) * | 2016-06-28 | 2018-03-16 | 琳得科股份有限公司 | Alignment jig, alignment method, and transfer method |
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| TW200807536A (en) * | 2006-07-28 | 2008-02-01 | Tokyo Ohka Kogyo Co Ltd | Wafer bonding method, thinning method and detaching method |
| JP2009193825A (en) * | 2008-02-14 | 2009-08-27 | Toyota Central R&D Labs Inc | Composite electrolyte membrane and its manufacturing method |
| JP2014135424A (en) * | 2013-01-11 | 2014-07-24 | Disco Abrasive Syst Ltd | Wafer cutting method |
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