TWI830743B - Manufacturing method of plated shaped article and circuit substrate - Google Patents

Manufacturing method of plated shaped article and circuit substrate Download PDF

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TWI830743B
TWI830743B TW108123081A TW108123081A TWI830743B TW I830743 B TWI830743 B TW I830743B TW 108123081 A TW108123081 A TW 108123081A TW 108123081 A TW108123081 A TW 108123081A TW I830743 B TWI830743 B TW I830743B
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mass
surface treatment
manufacturing
substrate
resist pattern
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TW108123081A
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TW202007750A (en
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西口直希
桂山真
榊原宏和
松本朋之
遠藤彩子
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日商Jsr股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)

Abstract

本發明的課題在於提供一種無鍍敷液的滲入而可製造形狀良好的鍍敷造形物的鍍敷造形物的製造方法。本發明的鍍敷造形物的製造方法的特徵在於包括:步驟(1),將表面處理劑暴露於在表面具有含銅膜的基板上,形成表面處理基板,所述表面處理劑含有0.001質量%~2質量%的選自三唑(A1)及苯并三唑系化合物(A2)中的至少一種三唑化合物(A)及90質量%~99.999質量%的有機溶劑(B);步驟(2),於所述表面處理基板上形成抗蝕劑組成物的塗膜;步驟(3),對所述塗膜進行曝光及顯影,形成抗蝕劑圖案;以及步驟(4),將所述抗蝕劑圖案作為遮罩來進行鍍敷液處理。 An object of the present invention is to provide a method for manufacturing a plated molded article that can produce a plated molded article with a good shape without penetration of a plating liquid. The manufacturing method of the plated shaped article of the present invention is characterized by including: step (1), exposing a surface treatment agent to a substrate having a copper-containing film on the surface to form a surface treatment substrate, and the surface treatment agent contains 0.001 mass % ~2 mass% of at least one triazole compound (A) selected from triazole (A1) and benzotriazole compound (A2) and 90 mass% to 99.999 mass% of organic solvent (B); step (2) ), forming a coating film of a resist composition on the surface treated substrate; step (3), exposing and developing the coating film to form a resist pattern; and step (4), applying the resist The etch pattern serves as a mask for plating solution processing.

Description

鍍敷造形物的製造方法及電路基板 Manufacturing method of plated shaped article and circuit substrate

本發明是有關於一種鍍敷造形物的製造方法、電路基板及表面處理劑以及表面處理劑套組。 The invention relates to a manufacturing method of a plated shaped object, a circuit substrate, a surface treatment agent and a surface treatment agent set.

配線或凸塊(bump)等鍍敷造形物是藉由於具有銅等的金屬箔的基板上形成抗蝕劑圖案,並將該抗蝕劑圖案作為遮罩來進行鍍敷液處理而形成。 Plating formed objects such as wiring and bumps are formed by forming a resist pattern on a substrate having a metal foil such as copper, and performing a plating solution treatment using the resist pattern as a mask.

近年來,於半導體裝置或液晶顯示器、觸控面板等顯示裝置的電路基板的配線或凸塊等連接端子中,對於高密度安裝的要求不斷提高,故正推進連接端子的微細化。伴隨於此,對於配線或凸塊等連接端子的形成中所使用的抗蝕劑圖案亦要求微細化。 In recent years, the demand for high-density mounting of connection terminals such as wiring and bumps on circuit boards of semiconductor devices or display devices such as liquid crystal displays and touch panels has been increasing, and the miniaturization of the connection terminals has been promoted. Along with this, there is also a demand for miniaturization of resist patterns used for forming connection terminals such as wiring and bumps.

然而,已知有如下問題:於將抗蝕劑圖案作為遮罩且藉由鍍敷液處理而形成鍍敷造形物時,鍍敷液滲入抗蝕劑圖案與基板之間(專利文獻1~專利文獻2)。 However, it is known that when a resist pattern is used as a mask and a plated molded object is formed by treatment with a plating liquid, the plating liquid penetrates between the resist pattern and the substrate (Patent Document 1 to Patent Document 1). Document 2).

[現有技術文獻] [Prior art documents]

[專利文獻] [Patent Document]

[專利文獻1] 日本專利特開2005-274920號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-274920

[專利文獻2] 日本專利特開2007-065642號公報 [Patent Document 2] Japanese Patent Application Publication No. 2007-065642

若抗蝕劑圖案微細化,則因鍍敷液的滲入而相鄰配線或凸塊彼此連接的風險變大。 If the resist pattern is made finer, there is a greater risk that adjacent wirings or bumps will be connected to each other due to penetration of the plating liquid.

本發明的目的在於:提供一種鍍敷造形物的製造方法,於鍍敷液處理時鍍敷液不滲入抗蝕劑圖案與基板之間而可製造形狀良好的鍍敷造形物;提供一種電路基板,具有藉由所述鍍敷造形物的製造方法而製造的鍍敷造形物;提供一種可較佳地用於所述鍍敷造形物的製造方法中的表面處理劑;及提供一種表面處理劑套組。 The object of the present invention is to provide a method for manufacturing a plated molded article, which can produce a plated molded article with good shape without the plating liquid penetrating between the resist pattern and the substrate during the plating liquid treatment; to provide a circuit substrate , having a plated shaped article manufactured by the method for manufacturing a plated shaped article; providing a surface treatment agent that can be preferably used in the method of manufacturing a plated shaped article; and providing a surface treatment agent Set.

本發明者等人為了解決所述課題而進行了努力研究。其結果發現,藉由具有以下構成的鍍敷造形物的製造方法而可解決所述課題,從而完成本發明。即,本發明是有關於例如以下的[1]~[11]。 The inventors of the present invention have conducted diligent research in order to solve the above-mentioned problems. As a result, they found that the above-mentioned problems can be solved by a manufacturing method of a plated molded article having the following structure, and completed the present invention. That is, the present invention relates to, for example, the following [1] to [11].

[1]一種鍍敷造形物的製造方法,其特徵在於包括:將表面處理劑暴露於在表面具有含銅膜的基板(以下,亦稱為「含銅基板」)上,形成表面處理基板的步驟(1)(以下,亦稱為「步驟(1)」),所述表面處理劑含有0.001質量%~2質量%的選自三唑(A1)及苯并三唑系化合物(A2)中的至少一種三唑化合物(A)及90質量%~99.999質量%的有機溶劑(B);於所述表面處理基板上形成抗蝕劑組成物的塗膜的步驟(2)(以下,亦稱為「步驟 (2)」);對所述塗膜進行曝光及顯影,形成抗蝕劑圖案的步驟(3)(以下,亦稱為「步驟(3)」);以及將所述抗蝕劑圖案作為遮罩來進行鍍敷液處理的步驟(4)(以下,亦稱為「步驟(4)」)。 [1] A method of manufacturing a plated shaped article, characterized by including: exposing a surface treatment agent to a substrate having a copper-containing film on the surface (hereinafter also referred to as a "copper-containing substrate"), and forming a surface-treated substrate Step (1) (hereinafter, also referred to as "step (1)"), the surface treatment agent contains 0.001 mass% to 2 mass% selected from triazole (A1) and benzotriazole compound (A2) At least one triazole compound (A) and 90 mass % to 99.999 mass % of an organic solvent (B); the step (2) of forming a coating film of a resist composition on the surface treatment substrate (hereinafter also referred to as for "steps" (2)"); the step (3) of exposing and developing the coating film to form a resist pattern (hereinafter also referred to as "step (3)"); and using the resist pattern as a mask The step (4) of plating solution treatment is performed under the cover (hereinafter also referred to as "step (4)").

[2]如所述[1]所述的鍍敷造形物的製造方法,其中所述抗蝕劑組成物含有鹼可溶性樹脂、丙烯酸化合物、及光自由基聚合起始劑。 [2] The method for producing a plated shaped article according to [1], wherein the resist composition contains an alkali-soluble resin, an acrylic compound, and a photoradical polymerization initiator.

[3]如所述[1]所述的鍍敷造形物的製造方法,其中所述抗蝕劑組成物含有酸解離性鹼難溶性樹脂及光酸產生劑。 [3] The method for producing a plated shaped article according to [1], wherein the resist composition contains an acid-dissociating alkali-insoluble resin and a photoacid generator.

[4]如所述[1]~[3]中任一項所述的鍍敷造形物的製造方法,其中所述抗蝕劑圖案的膜厚為0.8μm~300μm。 [4] The method for manufacturing a plated shaped article according to any one of [1] to [3], wherein the resist pattern has a film thickness of 0.8 μm to 300 μm.

[5]如所述[1]~[4]中任一項所述的鍍敷造形物的製造方法,於所述步驟(4)之後,進一步包括將所述抗蝕劑圖案去除的步驟(5)(以下,亦稱為「步驟(5)」)。 [5] The method for manufacturing a plated shaped article according to any one of [1] to [4], further comprising the step of removing the resist pattern after the step (4) ( 5) (hereinafter also referred to as "step (5)").

[6]如所述[1]~[5]中任一項所述的鍍敷造形物的製造方法,其中所述表面處理劑含有0.001質量%~2質量%的三唑化合物(A)及98質量%~99.999質量%的有機溶劑(B)。 [6] The method for manufacturing a plated shaped article according to any one of [1] to [5], wherein the surface treatment agent contains 0.001 to 2 mass % of a triazole compound (A) and 98% by mass to 99.999% by mass of organic solvent (B).

[7]如所述[1]~[6]中任一項所述的鍍敷造形物的製造方法,其中所述有機溶劑(B)為烷二醇單烷基醚乙酸酯、或醇。 [7] The method for producing a plated shaped article according to any one of [1] to [6], wherein the organic solvent (B) is alkylene glycol monoalkyl ether acetate or alcohol. .

[8]如所述[1]~[7]中任一項所述的鍍敷造形物的製造方法,其中所述有機溶劑(B)的標準沸點為80℃~200℃。 [8] The method for manufacturing a plated shaped article according to any one of [1] to [7], wherein the organic solvent (B) has a standard boiling point of 80°C to 200°C.

[9]一種電路基板,包括藉由如所述[1]~[8]中任一項所述的鍍敷造形物的製造方法而製造的鍍敷造形物。 [9] A circuit board including a plated molded article manufactured by the method of manufacturing a plated molded article according to any one of [1] to [8].

[10]一種表面處理劑,其特徵在於含有0.001質量%~2質量%的選自三唑(A1)及苯并三唑系化合物(A2)中的至少一種三唑化合物(A)及90質量%~99.999質量%的有機溶劑(B)。 [10] A surface treatment agent characterized by containing 0.001 mass % to 2 mass % of at least one triazole compound (A) selected from the group consisting of triazole (A1) and benzotriazole-based compounds (A2) and 90 mass % %~99.999% by mass of organic solvent (B).

[11]一種表面處理劑套組,用以製造如所述[10]所述的表面處理劑,所述表面處理劑套組的特徵在於:至少具有第一溶液及第二溶液,所述第一溶液含有超過2質量%且未滿100質量%的選自三唑(A1)及苯并三唑系化合物(A2)中的至少一種三唑化合物(A),並且含有超過0質量%且98質量%以下的有機溶劑(B);所述第二溶液含有所述有機溶劑(B)。 [11] A surface treatment agent set for producing the surface treatment agent as described in [10]. The surface treatment agent set is characterized in that it has at least a first solution and a second solution, and the third solution A solution containing more than 2 mass % and less than 100 mass % of at least one triazole compound (A) selected from the group consisting of triazole (A1) and benzotriazole-based compounds (A2), and containing more than 0 mass % and 98 Mass % or less of the organic solvent (B); the second solution contains the organic solvent (B).

本發明的鍍敷造形物的製造方法於鍍敷液處理時鍍敷液不滲入抗蝕劑圖案與基板之間而可製造形狀良好的鍍敷造形物。本發明的電路基板由於具有藉由本發明的鍍敷造形物的製造方法而製造的鍍敷造形物,故可靠性高。 The method for manufacturing a plated shaped article of the present invention can produce a plated shaped article with good shape without the plating liquid penetrating between the resist pattern and the substrate during the plating liquid treatment. The circuit board of the present invention has high reliability since it has a plated molded article produced by the method of producing a plated molded article of the present invention.

本發明的表面處理劑可較佳地用於本發明的鍍敷造形物的製造方法中。 The surface treatment agent of the present invention can be preferably used in the method of manufacturing a plated shaped article of the present invention.

本發明的表面處理劑套組可較佳地用於製造所述表面處理劑。 The surface treatment agent kit of the present invention can be preferably used to manufacture the surface treatment agent.

圖1是本發明的鍍敷造形物的製造方法的概略圖。 FIG. 1 is a schematic diagram of a method for manufacturing a plated shaped article of the present invention.

圖2是實施例1B中形成的抗蝕劑圖案的電子顯微鏡照片。 FIG. 2 is an electron micrograph of the resist pattern formed in Example 1B.

圖3是比較例4B中形成的抗蝕劑圖案的電子顯微鏡照片。 FIG. 3 is an electron micrograph of the resist pattern formed in Comparative Example 4B.

以下,於對本發明的表面處理劑進行說明後,對本發明的鍍敷造形物的製造方法、電路基板及表面處理劑套組進行說明。 Hereinafter, after describing the surface treatment agent of the present invention, the manufacturing method of the plated shaped article of the present invention, the circuit board, and the surface treatment agent set will be described.

關於本說明書中所例示的各成分、例如表面處理劑中的各成分,只要未特別提及,則分別可單獨使用一種,亦可併用兩種以上。 Unless otherwise mentioned, each component illustrated in this specification, for example, each component in a surface treatment agent may be used individually by 1 type, or may be used in combination of 2 or more types.

<1>表面處理劑 <1>Surface treatment agent

本發明的表面處理劑含有0.001質量%~2質量%的選自三唑(A1)及苯并三唑系化合物(A2)中的至少一種三唑化合物(A)及90質量%~99.999質量%的有機溶劑(B)。另外,於不喪失本發明的表面處理劑的性能的範圍內,可視需要而含有其他成分(C)。 The surface treatment agent of the present invention contains 0.001 mass % to 2 mass % of at least one triazole compound (A) selected from triazole (A1) and benzotriazole compound (A2) and 90 mass % to 99.999 mass %. organic solvent (B). In addition, other components (C) may be contained as necessary within the range that the performance of the surface treatment agent of the present invention is not lost.

本發明的表面處理劑可將三唑化合物(A)均勻地暴露於含銅基板的整個表面。暴露於含銅基板的表面的三唑化合物(A)可與銅或其衍生物形成錯合物,藉此推斷,於含銅基板的表面形成包含三唑化合物(A)與銅或其衍生物的錯合物的極薄的皮膜(以下,亦稱為「表面處理層」)。 The surface treatment agent of the present invention can uniformly expose the triazole compound (A) to the entire surface of the copper-containing substrate. The triazole compound (A) exposed on the surface of the copper-containing substrate can form a complex with copper or its derivatives. It is inferred that the triazole compound (A) formed on the surface of the copper-containing substrate contains copper or its derivatives. An extremely thin film of complex (hereinafter also referred to as "surface treatment layer").

<1-1>三唑化合物(A) <1-1>Triazole compound (A)

於本發明的鍍敷造形物的製造方法中,三唑化合物(A)與含銅膜的銅形成錯合物,藉此使基板的表面為疏水性,且對基板 賦予提高與抗蝕劑圖案的接著性的效果。 In the manufacturing method of a plated shaped article of the present invention, the triazole compound (A) forms a complex with the copper of the copper-containing film, thereby making the surface of the substrate hydrophobic and making the substrate hydrophobic. It has the effect of improving the adhesion with the resist pattern.

三唑化合物(A)為選自三唑(A1)、及苯并三唑系化合物(A2)中的至少一種,三唑(A1)為1,2,3-三唑或1,2,4-三唑,苯并三唑系化合物(A2)包含苯并三唑、及將苯并三唑的苯環的1個~4個氫原子取代為疏水性基的化合物。 The triazole compound (A) is at least one selected from the group consisting of triazole (A1) and benzotriazole-based compound (A2), and the triazole (A1) is 1,2,3-triazole or 1,2,4 -Triazole, the benzotriazole-based compound (A2) includes benzotriazole and a compound in which 1 to 4 hydrogen atoms of the benzene ring of the benzotriazole are substituted with a hydrophobic group.

作為所述疏水性基,例如可列舉:甲基、乙基、正丁基、第三丁基、異丁基、正己基、2-乙基己基、及正十二烷基等烷基;環丁基、環戊基、環己基、環戊烯基、及異冰片基等環烷基;環戊基甲基、及環己基甲基等烷基取代的環烷基;苯基、1-萘基及2-萘基等芳基;苄基及2-苯乙基等芳烷基;氟原子、全氟甲基、1-氟苯基及2,2',2"-三氟乙基等含鹵素的烴基。 Examples of the hydrophobic group include alkyl groups such as methyl, ethyl, n-butyl, tert-butyl, isobutyl, n-hexyl, 2-ethylhexyl, and n-dodecyl; and ring Cycloalkyl groups such as butyl, cyclopentyl, cyclohexyl, cyclopentenyl, and isobornyl; alkyl-substituted cycloalkyl groups such as cyclopentylmethyl and cyclohexylmethyl; phenyl, 1-naphthyl Aryl groups such as benzyl and 2-naphthyl; aralkyl groups such as benzyl and 2-phenylethyl; fluorine atom, perfluoromethyl, 1-fluorophenyl and 2,2',2"-trifluoroethyl, etc. Halogen-containing hydrocarbon groups.

苯并三唑系化合物(A2)的雜環可為異構體,例如於為不含疏水性基的苯并三唑的情況下,包含1H-苯并三唑及2H-苯并三唑。作為苯并三唑系化合物(A2),可列舉苯并三唑及甲苯并三唑等。 The heterocyclic ring of the benzotriazole compound (A2) may be an isomer, and for example, in the case of a benzotriazole containing no hydrophobic group, it includes 1H-benzotriazole and 2H-benzotriazole. Examples of the benzotriazole-based compound (A2) include benzotriazole, tolyzotriazole, and the like.

本發明的表面處理劑中所含的三唑化合物(A)的含有比例為0.001質量%~2質量%,較佳為0.01質量%~1.5質量%,進而佳為0.05質量%~1質量%。若三唑化合物(A)的含有比例為所述範圍內,則當將本發明的表面處理劑旋塗於基板上時,可於含銅基板的整個表面均勻地形成三唑化合物(A)的表面處理層,結果可製造於含銅基板的整個表面無鍍敷液滲入的鍍敷造形物。 The content ratio of the triazole compound (A) contained in the surface treatment agent of the present invention is 0.001 mass% to 2 mass%, preferably 0.01 mass% to 1.5 mass%, and more preferably 0.05 mass% to 1 mass%. If the content ratio of the triazole compound (A) is within the above range, when the surface treatment agent of the present invention is spin-coated on the substrate, the triazole compound (A) can be uniformly formed on the entire surface of the copper-containing substrate. As a result of the surface treatment layer, it is possible to manufacture a plated molded article without the penetration of plating liquid on the entire surface of the copper-containing substrate.

<1-2>有機溶劑(B) <1-2>Organic solvent (B)

有機溶劑(B)為用以均勻地溶解三唑化合物(A)的成分,藉由含有有機溶劑(B),可將三唑化合物(A)均勻地暴露於含銅基板的整個表面。 The organic solvent (B) is a component for uniformly dissolving the triazole compound (A). By containing the organic solvent (B), the triazole compound (A) can be uniformly exposed to the entire surface of the copper-containing substrate.

作為有機溶劑(B),只要可均勻地溶解三唑化合物(A)且可對含銅膜良好地浸潤,則可為任一種有機溶劑,例如可列舉:乙二醇單甲醚、乙二醇單乙醚、二乙二醇、二乙二醇單乙醚、乳酸乙酯、及丙二醇單甲醚等醇類;乙酸乙酯、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、乙醯乙酸甲酯、及乙氧基乙酸乙酯等酯類;甲基戊基酮、及環己酮等酮類;二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二-正丙醚、及二丙二醇二甲醚等烷二醇二烷基醚;以及乙二醇單甲醚乙酸酯、乙二醇單乙醚乙酸酯、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、及丙二醇單-正丙醚乙酸酯等烷二醇單烷基醚乙酸酯。 The organic solvent (B) can be any organic solvent as long as it can uniformly dissolve the triazole compound (A) and wet the copper-containing film well. Examples include: ethylene glycol monomethyl ether, ethylene glycol Alcohols such as monoethyl ether, diethylene glycol, diethylene glycol monoethyl ether, ethyl lactate, and propylene glycol monomethyl ether; ethyl acetate, ethyl 2-hydroxypropionate, 2-hydroxy-2-methylpropionic acid Esters such as ethyl ester, methyl acetate, and ethoxyethyl acetate; ketones such as methyl amyl ketone and cyclohexanone; diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol diethyl ether, etc. Alkylene glycol dialkyl ethers such as ethylene glycol di-n-propyl ether and dipropylene glycol dimethyl ether; and ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, and propylene glycol monomethyl ether acetate. esters, propylene glycol monoethyl ether acetate, and propylene glycol mono-n-propyl ether acetate and other alkylene glycol monoalkyl ether acetates.

該些中,就對三唑化合物(A)的溶解性高及表面處理劑對含銅膜良好地浸潤的方面而言,較佳為烷二醇單烷基醚乙酸酯及醇。藉由表面處理劑對含銅膜良好地浸潤,可使三唑化合物(A)均勻地暴露於含銅基板的整個表面。 Among these, alkylene glycol monoalkyl ether acetate and alcohol are preferred in terms of high solubility to the triazole compound (A) and good penetration of the surface treatment agent into the copper-containing film. By well infiltrating the copper-containing film with the surface treatment agent, the triazole compound (A) can be evenly exposed to the entire surface of the copper-containing substrate.

有機溶劑(B)的標準沸點通常為80℃~200℃,較佳為100℃~180℃,更佳為120℃~160℃。於將表面處理劑暴露於基板的期間有機溶劑(B)揮發,因此其揮發速度過快或過慢均無法使表面處理劑中所含的三唑化合物(A)均勻地暴露於含銅基板 的整個表面。若有機溶劑(B)的標準沸點為所述範圍,則有機溶劑(B)具有適當的揮發速度,結果可使三唑化合物(A)均勻地暴露於含銅基板的整個表面。 The standard boiling point of the organic solvent (B) is usually 80°C to 200°C, preferably 100°C to 180°C, and more preferably 120°C to 160°C. The organic solvent (B) volatilizes during the period when the surface treatment agent is exposed to the substrate. Therefore, the evaporation rate is too fast or too slow to evenly expose the triazole compound (A) contained in the surface treatment agent to the copper-containing substrate. of the entire surface. If the standard boiling point of the organic solvent (B) is within the above range, the organic solvent (B) has an appropriate volatilization speed, and as a result, the triazole compound (A) can be uniformly exposed to the entire surface of the copper-containing substrate.

再者,所謂本說明書中的標準沸點為一氣壓下的沸點。 In addition, the so-called standard boiling point in this specification refers to the boiling point under one atmosphere.

作為有機溶劑(B),較佳為丙二醇單甲醚乙酸酯(標準沸點146℃)、丙二醇單甲醚(標準沸點121℃)、及乳酸乙酯(標準沸點154℃)。 As the organic solvent (B), propylene glycol monomethyl ether acetate (standard boiling point 146°C), propylene glycol monomethyl ether (standard boiling point 121°C), and ethyl lactate (standard boiling point 154°C) are preferred.

本發明的表面處理劑中所含的有機溶劑(B)的含有比例為90質量%~99.999質量%,較佳為95質量%~99.999質量%,更佳為98質量%~99.999質量%。若為所述範圍內,則可使三唑化合物(A)均勻且薄地暴露於含銅基板的整個表面,故可於含銅基板的整個表面均勻地形成三唑化合物(A)的表面處理層,結果可製造無鍍敷液滲入的鍍敷造形物。 The content ratio of the organic solvent (B) contained in the surface treatment agent of the present invention is 90 mass% to 99.999 mass%, preferably 95 mass% to 99.999 mass%, more preferably 98 mass% to 99.999 mass%. If it is within the above range, the triazole compound (A) can be uniformly and thinly exposed to the entire surface of the copper-containing substrate, and therefore the surface treatment layer of the triazole compound (A) can be uniformly formed on the entire surface of the copper-containing substrate. , as a result, a plated molded article without penetration of plating liquid can be produced.

<1-3>其他成分(C) <1-3>Other ingredients (C)

於不喪失本發明的表面處理劑的效果的範圍內,本發明的表面處理劑視需要可含有界面活性劑及還原劑等其他成分(C)。所述界面活性劑是用於藉由改良本發明的表面處理劑對基板的潤濕性而可於含銅基板的表面均勻地形成表面處理層的成分。 The surface treatment agent of the present invention may contain other components (C) such as a surfactant and a reducing agent as necessary, within the range that the effect of the surface treatment agent of the present invention is not lost. The surfactant is a component used to uniformly form a surface treatment layer on the surface of a copper-containing substrate by improving the wettability of the surface treatment agent of the present invention to the substrate.

作為所述界面活性劑,例如可列舉:聚氧伸烷基苯基醚、聚氧伸烷基甲基苯基醚、聚氧伸烷基辛基苯基醚、聚氧伸烷基壬基苯基醚等非離子系界面活性劑;十二烷基苯磺酸鈉等烷基芳基磺酸鹽等陰離子系界面活性劑。 Examples of the surfactant include polyoxyalkylene phenyl ether, polyoxyalkylene methyl phenyl ether, polyoxyalkylene octyl phenyl ether, and polyoxyalkylene nonylbenzene. nonionic surfactants such as ethers; anionic surfactants such as alkyl aryl sulfonates such as sodium dodecylbenzene sulfonate.

本發明的表面處理劑中所含的其他成分(C)的含有比例為8質量%以下,較佳為4質量%以下,更佳為1.999質量%以下,進而佳為0質量%。即,本發明的表面處理劑進而佳為僅包含三唑化合物(A)及有機溶劑(B)。 The content ratio of other components (C) contained in the surface treatment agent of the present invention is 8 mass% or less, preferably 4 mass% or less, more preferably 1.999 mass% or less, and still more preferably 0 mass%. That is, the surface treatment agent of the present invention further preferably contains only the triazole compound (A) and the organic solvent (B).

<1-4>表面處理劑的製造方法 <1-4> Manufacturing method of surface treatment agent

本發明的表面處理劑可藉由將三唑化合物(A)及視需要的其他成分(C)均勻地溶解於有機溶劑(B)中來製造。 The surface treatment agent of the present invention can be produced by uniformly dissolving the triazole compound (A) and optional other components (C) in the organic solvent (B).

對於溶解後的混合液,例如可利用微細孔的膜濾器(membrane filter)等過濾器進行過濾而去除雜質。 The dissolved mixed liquid can be filtered using a filter such as a fine-pore membrane filter to remove impurities.

<2>表面處理劑套組 <2>Surface treatment agent set

本發明的表面處理劑套組是用以製造本發明的表面處理劑的表面處理劑套組,至少具有以下所說明的第一溶液及第二溶液。 The surface treatment agent set of the present invention is a surface treatment agent set for producing the surface treatment agent of the present invention, and includes at least a first solution and a second solution described below.

第一溶液含有超過2質量%且未滿100質量%的選自三唑(A1)及苯并三唑系化合物(A2)中的至少一種三唑化合物(A)以及超過0質量%且98質量%以下的有機溶劑(B)。第一溶液可含有所述其他成分(C)。 The first solution contains more than 2 mass % and less than 100 mass % of at least one triazole compound (A) selected from the group consisting of triazole (A1) and benzotriazole-based compounds (A2), and more than 0 mass % and 98 mass %. % or less of organic solvent (B). The first solution may contain said other component (C).

第一溶液中所含的三唑化合物(A)及有機溶劑(B)以及其他成分(C)的詳細情況與本發明的表面處理劑的說明中所述的三唑化合物(A)及有機溶劑(B)以及其他成分(C)同義。 The details of the triazole compound (A) and the organic solvent (B) and other components (C) contained in the first solution are the same as the triazole compound (A) and the organic solvent described in the description of the surface treatment agent of the present invention. (B) and other ingredients (C) are synonymous.

所述第二溶液含有有機溶劑(B)。第二溶液中所含的有機溶劑(B)的含有比例通常為95質量%以上,較佳為99質量%以上。作為第二溶液中所含的有機溶劑(B)以外的成分,可列舉 所述其他成分(C)。 The second solution contains organic solvent (B). The content ratio of the organic solvent (B) contained in the second solution is usually 95 mass% or more, preferably 99 mass% or more. Examples of components other than the organic solvent (B) contained in the second solution include The other ingredients (C).

第二溶液中所含的有機溶劑(B)及其他成分(C)的詳細情況與本發明的表面處理劑的說明中所述的有機溶劑(B)及其他成分(C)同義。第二溶液中所含的有機溶劑(B)可與第一溶液中所含的有機溶劑(B)為同種,亦可為不同種,較佳為與第一溶液中所含的有機溶劑(B)為同種。 The details of the organic solvent (B) and other components (C) contained in the second solution are synonymous with the organic solvent (B) and other components (C) described in the description of the surface treatment agent of the present invention. The organic solvent (B) contained in the second solution may be of the same type as the organic solvent (B) contained in the first solution, or may be of a different type. Preferably, it may be the same type as the organic solvent (B) contained in the first solution. ) are of the same species.

本發明的表面處理劑可使用本發明的表面處理劑套組來製造。具體而言,可藉由以選自三唑(A1)及苯并三唑系化合物(A2)中的至少一種三唑化合物(A)成為0.001質量%~2質量%及有機溶劑(B)成為90質量%~99.999質量%的方式進行混合來製造。 The surface treatment agent of the present invention can be produced using the surface treatment agent set of the present invention. Specifically, it can be obtained by using at least one triazole compound (A) selected from the group consisting of triazole (A1) and a benzotriazole compound (A2) in an amount of 0.001% to 2% by mass and an organic solvent (B). It is manufactured by mixing 90 mass% to 99.999 mass%.

<3>鍍敷造形物的製造方法 <3>Manufacturing method of plated molded article

本發明的鍍敷造形物的製造方法包括:步驟(1),將表面處理劑暴露於在表面具有含銅膜的基板上,形成表面處理基板,所述表面處理劑含有0.001質量%~2質量%的選自三唑(A1)及苯并三唑系化合物(A2)中的至少一種三唑化合物(A)及90質量%~99.999質量%的有機溶劑(B);步驟(2),於所述表面處理基板上形成抗蝕劑組成物的塗膜;步驟(3),對所述塗膜進行曝光、顯影,形成抗蝕劑圖案;以及步驟(4),將所述抗蝕劑圖案作為遮罩來進行鍍敷液處理。 The manufacturing method of plated shaped objects of the present invention includes: step (1), exposing a surface treatment agent to a substrate with a copper-containing film on the surface to form a surface treatment substrate; the surface treatment agent contains 0.001 mass % to 2 mass % of at least one triazole compound (A) selected from triazole (A1) and benzotriazole compound (A2) and 90 mass% to 99.999 mass% of an organic solvent (B); step (2), in A coating film of a resist composition is formed on the surface treatment substrate; step (3), exposing and developing the coating film to form a resist pattern; and step (4), forming the resist pattern Perform plating solution treatment as a mask.

本發明的鍍敷造形物的製造方法可進一步包括於所述步驟(4)後,將所述抗蝕劑剝離的步驟(5)。將本發明的鍍敷造 形物的製造方法的步驟的概略示於圖1中。 The method for manufacturing a plated shaped object of the present invention may further include a step (5) of peeling off the resist after the step (4). The plating of the present invention is The outline of the steps of the manufacturing method of the shaped object is shown in FIG. 1 .

本發明的表面處理劑暴露於含銅基板上,藉此可推斷,形成三唑化合物(A)與銅或其衍生物的錯合物的極薄皮膜。所述錯合物為疏水性的三唑化合物(A)的錯合物,故具有疏水性,與親水性的鍍敷液無親和性。本發明的鍍敷造形物的製造方法中,此種疏水性的表面處理層形成於抗蝕劑圖案與含銅基板的接觸面,故可推斷於發生鍍敷液的滲入的抗蝕劑圖案與含銅基板的接觸面,可防止鍍敷液的滲入。 When the surface treatment agent of the present invention is exposed to a copper-containing substrate, it is inferred that an extremely thin film of a complex of the triazole compound (A) and copper or its derivative is formed. The complex is a complex of a hydrophobic triazole compound (A), so it is hydrophobic and has no affinity with the hydrophilic plating solution. In the method of manufacturing a plated molded article of the present invention, since such a hydrophobic surface treatment layer is formed on the contact surface between the resist pattern and the copper-containing substrate, it can be inferred that the penetration of the plating liquid occurs between the resist pattern and the copper-containing substrate. The contact surface of the copper-containing substrate can prevent the penetration of plating liquid.

進而,由於三唑化合物(A)可改善抗蝕劑圖案與含銅膜的接著性,故可推斷於發生了鍍敷液的滲入的抗蝕劑圖案與含銅基板的接觸面,即,尤其是於接著力弱的地方,可防止鍍敷液的滲入。 Furthermore, since the triazole compound (A) can improve the adhesion between the resist pattern and the copper-containing film, it is inferred that the contact surface between the resist pattern and the copper-containing substrate where the plating liquid penetrates occurs, that is, particularly This prevents the penetration of plating liquid in areas with weak adhesion.

<3-1>步驟(1) <3-1>Step (1)

步驟(1)是藉由將本發明的表面處理劑暴露於含銅基板上,而形成於含銅基板的表面具有表面處理層的表面處理基板。所述表面處理層是無法利用觸針式膜厚測定裝置或分光橢圓儀般的通常的膜厚測定裝置進行測定的層。 Step (1) is to form a surface-treated substrate having a surface treatment layer on the surface of the copper-containing substrate by exposing the surface treatment agent of the present invention to the copper-containing substrate. The surface treatment layer is a layer that cannot be measured by a common film thickness measuring device such as a stylus type film thickness measuring device or a spectroscopic ellipsometer.

作為所述含銅基板,可列舉於矽晶圓或玻璃基板等基板的表面設置有含銅膜的基板。作為基板的平面形狀,例如可列舉四邊形及圓形。作為基板表面的形狀,可列舉平坦、及矽通孔(Through Silicon Via,TSV)結構般的凹凸形狀。 Examples of the copper-containing substrate include a substrate in which a copper-containing film is provided on the surface of a substrate such as a silicon wafer or a glass substrate. Examples of the planar shape of the substrate include a quadrangular shape and a circular shape. Examples of the shape of the substrate surface include a flat surface and an uneven shape like a through silicon via (TSV) structure.

關於所述含銅膜,可列舉含有銅、或氧化銅等銅化合物 的膜。含銅膜的厚度通常為10Å~100,000Å。 Examples of the copper-containing film include copper compounds such as copper or copper oxide. membrane. The thickness of copper-containing films is usually 10Å~100,000Å.

作為表面處理劑的暴露方法,可列舉藉由浸漬塗佈、旋塗、網版塗佈、凹版塗佈、線棒塗佈、狹縫塗佈及噴墨等形成塗膜的方法。該些中,就可將三唑化合物(A)均勻地暴露於含銅基板的整個表面,且可形成良好的表面處理層,結果於鍍敷液處理時鍍敷液不滲入抗蝕劑圖案與基板之間而可製造形狀良好的鍍敷造形物的觀點而言,特佳為藉由旋塗或網版塗佈的暴露。 Examples of methods for exposing the surface treatment agent include methods of forming a coating film by dip coating, spin coating, screen coating, gravure coating, wire bar coating, slit coating, inkjet coating, and the like. Among these, the triazole compound (A) can be uniformly exposed to the entire surface of the copper-containing substrate, and a good surface treatment layer can be formed. As a result, the plating liquid does not penetrate into the resist pattern and the resist pattern during the plating liquid treatment. From the viewpoint of producing a plated molded article with good shape between substrates, exposure by spin coating or screen coating is particularly preferred.

藉由旋塗的暴露為如下方法:一面使含銅基板旋轉一面將表面處理劑載置於含銅基板上,藉此,藉由旋轉所產生的離心力而使表面處理劑於含銅基板的整個表面均勻地擴展,並且一面旋轉一面使表面處理劑中的有機溶劑等揮發成分揮發,從而將表面處理劑暴露於含銅基板。 Exposure by spin coating is a method in which a surface treatment agent is placed on the copper-containing substrate while the copper-containing substrate is rotating, whereby the surface treatment agent is spread over the entire copper-containing substrate by the centrifugal force generated by the rotation. The surface spreads evenly, and volatile components such as organic solvents in the surface treatment agent are volatilized while rotating, thereby exposing the surface treatment agent to the copper-containing substrate.

旋塗中的表面處理劑的載置量可根據含銅基板的表面積來適宜選擇,通常為1cc~20cc,較佳為2cc~10cc。旋塗中的最高旋轉速度通常為400rpm~4000rpm,較佳為800rpm~3000rpm。旋塗中進行最高旋轉速度的時間通常為10秒~3000秒,較佳為30秒~2000秒。 The loading amount of the surface treatment agent in spin coating can be appropriately selected according to the surface area of the copper-containing substrate, and is usually 1cc~20cc, preferably 2cc~10cc. The maximum rotation speed in spin coating is usually 400rpm~4000rpm, preferably 800rpm~3000rpm. The maximum rotation speed during spin coating is usually 10 seconds to 3000 seconds, preferably 30 seconds to 2000 seconds.

藉由狹縫塗佈的暴露為如下方法:一面將於噴出表面處理劑的部分具有狹縫狀孔的狹縫噴嘴按壓至含銅基板,一面使表面處理劑中的有機溶劑等揮發成分揮發,從而將表面處理劑暴露於含銅基板的表面。 The exposure by slit coating is as follows: while pressing a slit nozzle with a slit-like hole in the part where the surface treatment agent is sprayed against the copper-containing substrate, volatile components such as organic solvents in the surface treatment agent are volatilized. The surface treatment agent is thereby exposed to the surface of the copper-containing substrate.

狹縫塗佈中的表面處理劑的噴出速度可根據含銅基板 的表面積來適宜選擇,通常為0.01cc/秒~1.0cc/秒。狹縫塗佈中的狹縫噴嘴的移動速度通常為1cm/秒~50cm/秒。 The spray speed of the surface treatment agent in slot coating can be adjusted according to the copper-containing substrate. The surface area is appropriately selected, usually 0.01cc/second ~ 1.0cc/second. The moving speed of the slit nozzle in slot coating is usually 1cm/second to 50cm/second.

可於將本發明的表面處理劑暴露於含銅基板上後,對含銅基板進行加熱。藉由加熱,可使有機溶劑(B)揮發,可於含銅基板的表面形成良好的表面處理層。另外推斷,藉由加熱,可促進形成三唑化合物(A)與含銅膜的錯合物,結果推斷,可形成良好的表面處理層。所述加熱溫度通常為200℃以下,較佳為70℃~150℃,所述加熱時間通常為0.5分鐘~20分鐘,較佳為1分鐘~10分鐘。 After the surface treatment agent of the present invention is exposed to the copper-containing substrate, the copper-containing substrate can be heated. By heating, the organic solvent (B) can be volatilized and a good surface treatment layer can be formed on the surface of the copper-containing substrate. In addition, it is inferred that the formation of a complex of the triazole compound (A) and the copper-containing film can be accelerated by heating, and as a result, it is inferred that a good surface treatment layer can be formed. The heating temperature is usually below 200°C, preferably 70°C to 150°C, and the heating time is usually 0.5 minutes to 20 minutes, preferably 1 minute to 10 minutes.

<3-2>步驟(2) <3-2>Step (2)

步驟(2)是於步驟(1)中所形成的表面處理基板上形成抗蝕劑組成物的塗膜。 Step (2) is to form a coating film of the resist composition on the surface-treated substrate formed in step (1).

作為所述抗蝕劑組成物,可列舉鍍敷造形物的製造中所使用的公知的抗蝕劑組成物,例如可列舉:日本專利特開2004-309775號公報、日本專利特開2007-248727號公報、日本專利特開2015-194715號公報、及日本專利特開2009-169085號公報中記載的含有酸解離性鹼難溶性樹脂及光酸產生劑的正型抗蝕劑組成物;以及日本專利特開2000-039709號公報、日本專利特開2007-293306號公報、WO2018/114635、及WO2013/084886等中記載的含有鹼可溶性樹脂、丙烯酸化合物及光自由基聚合起始劑的負型抗蝕劑組成物。 Examples of the resist composition include known resist compositions used in the production of plated molded articles. Examples include Japanese Patent Application Laid-Open No. 2004-309775 and Japanese Patent Application Laid-Open No. 2007-248727. The positive resist composition containing an acid-dissociating alkali-insoluble resin and a photoacid generator described in Japanese Patent Application Publication No. 2015-194715 and Japanese Patent Application Publication No. 2009-169085; and Japan Negative type resistors containing an alkali-soluble resin, an acrylic compound and a photoradical polymerization initiator are described in Japanese Patent Application Laid-Open No. 2000-039709, Japanese Patent Application Laid-Open No. 2007-293306, WO2018/114635, and WO2013/084886. Corrosion composition.

當於將所述負型抗蝕劑組成物曝光後進行顯影時,經曝 光的抗蝕劑塗膜於膨潤後收縮。若收縮時抗蝕劑塗膜與基板的接著性弱,則存在顯影後的抗蝕劑圖案成為底切(undercut)形狀的情況。若抗蝕劑圖案成為底切形狀,則鍍敷液侵入因底切形狀而產生的空間部分,因此更容易發生鍍敷液的滲入。藉此,若使用所述負型抗蝕劑組成物作為所述抗蝕劑組成物,則本申請案發明的鍍敷造形物的製造方法的效果明顯地顯現,故較佳。 When the negative resist composition is developed after exposure, the exposed The photoresist coating shrinks after swelling. If the adhesiveness between the resist coating film and the substrate is weak during shrinkage, the resist pattern after development may have an undercut shape. If the resist pattern has an undercut shape, the plating liquid will invade into the space created by the undercut shape, so the plating liquid will more easily infiltrate. Therefore, it is preferable to use the negative resist composition as the resist composition because the effect of the manufacturing method of the plated molded article of the present application is clearly apparent.

所述正型抗蝕劑組成物曝光、顯影後所形成的抗蝕劑圖案為未交聯的樹脂膜,故與含銅基板的接著性弱,因此容易發生鍍敷液的滲入。藉此,即使使用所述正型抗蝕劑組成物作為所述抗蝕劑組成物,本申請案發明的鍍敷造形物的製造方法的效果亦明顯地顯現,故較佳。 The resist pattern formed after exposure and development of the positive resist composition is an uncrosslinked resin film, and therefore has weak adhesion to the copper-containing substrate and is prone to infiltration of the plating solution. Accordingly, even if the positive resist composition is used as the resist composition, the effect of the method for manufacturing a plated molded article of the present invention is clearly apparent, so it is preferable.

所述抗蝕劑組成物的塗膜例如可藉由旋塗、利用乾膜的轉印或狹縫塗佈來形成,形成該塗膜時的詳細條件可根據抗蝕劑組成物的種類來適宜選擇。例如,於使用所述負型抗蝕劑組成物作為所述抗蝕劑組成物並且藉由旋塗來形成塗膜的情況下,旋塗的最高旋轉速度通常為800rpm~4000rpm,其時間為10秒~3000秒,旋塗後,通常於50℃~200℃下加熱0.5分鐘~20分鐘,藉此形成塗膜。 The coating film of the resist composition can be formed, for example, by spin coating, transfer using a dry film, or slit coating. The detailed conditions for forming the coating film can be appropriately determined according to the type of the resist composition. select. For example, when the negative resist composition is used as the resist composition and a coating film is formed by spin coating, the maximum rotation speed of the spin coating is usually 800 rpm to 4000 rpm, and the time is 10 seconds to 3000 seconds. After spin coating, it is usually heated at 50°C to 200°C for 0.5 to 20 minutes to form a coating film.

塗膜的膜厚通常為與步驟(3)中所形成的抗蝕劑圖案的膜厚相同或稍厚,通常較抗蝕劑圖案的膜厚厚0%~10%。 The film thickness of the coating film is usually the same as or slightly thicker than the film thickness of the resist pattern formed in step (3), and is usually 0% to 10% thicker than the film thickness of the resist pattern.

<3-3>步驟(3) <3-3>Step (3)

步驟(3)中,對步驟(2)中所形成的塗膜進行曝光、顯影, 形成抗蝕劑圖案。 In step (3), the coating film formed in step (2) is exposed and developed, A resist pattern is formed.

所述曝光通常介隔具有與要形成的抗蝕劑圖案相符的遮光圖案的遮罩(例如網線(reticle)),藉由等倍投影曝光或縮小投影曝光來進行。曝光光通常使用波長為190nm~500nm的雷射。曝光量根據抗蝕劑組成物的種類或塗膜的膜厚來適宜選擇。例如,於所述抗蝕劑組成物為所述負型抗蝕劑組成物,且曝光光為i射線(365nm)雷射,塗膜的膜厚為50μm的情況下,曝光量通常為100mJ/cm2~10,000mJ/cm2The exposure is usually performed by equal-magnification projection exposure or reduced projection exposure through a mask (such as a reticle) having a light-shielding pattern consistent with the resist pattern to be formed. The exposure light usually uses laser with a wavelength of 190nm~500nm. The exposure amount is appropriately selected depending on the type of resist composition and the film thickness of the coating film. For example, when the resist composition is the negative resist composition, the exposure light is an i-ray (365 nm) laser, and the film thickness of the coating film is 50 μm, the exposure dose is usually 100 mJ/ cm 2 ~10,000mJ/cm 2 .

曝光後,亦可於顯影前進行加熱處理。尤其是於抗蝕劑組成物為所述正型抗蝕劑組成物的情況下,通常進行加熱處理,其條件通常為於70℃~180℃下進行1分鐘~10分鐘。 After exposure, heat treatment can also be performed before development. Especially when the resist composition is the positive resist composition, heat treatment is usually performed, and the conditions are usually 1 minute to 10 minutes at 70°C to 180°C.

所述顯影通常藉由顯影液來進行。藉由選擇性曝光,塗膜的每個部位相對於顯影液的溶解度產生差異,故藉由顯影液與塗膜接觸,溶解度高的塗膜部分溶化,結果未溶解的塗膜部分形成抗蝕劑圖案。 The development is usually performed with a developer. Through selective exposure, the solubility of each part of the coating film with respect to the developer is different. Therefore, when the developer comes into contact with the coating film, the part of the coating film with high solubility is dissolved, and the undissolved part of the coating film forms a resist. pattern.

作為所述顯影液,通常使用氫氧化鉀水溶液、及四甲基氫氧化銨水溶液等鹼性顯影液。 As the developer, alkaline developers such as potassium hydroxide aqueous solution and tetramethylammonium hydroxide aqueous solution are usually used.

作為顯影方法,例如可列舉覆液法、浸漬法、攪拌法、噴霧法及噴淋法。顯影時間通常於23℃下為30秒~600秒。 Examples of the development method include a liquid coating method, a dipping method, a stirring method, a spray method, and a shower method. The development time is usually 30 seconds to 600 seconds at 23°C.

顯影後,可藉由水等對抗蝕劑圖案進行清洗。其後,可藉由氣槍或加熱板進行乾燥。 After development, the resist pattern can be cleaned with water or the like. Thereafter, drying can be carried out using an air gun or a heating plate.

抗蝕劑圖案的膜厚通常為0.8μm~300μm,當鍍敷造形 物為配線時,通常為0.8μm~50μm,當鍍敷造形物為電極時,為1μm~300μm。 The film thickness of the resist pattern is usually 0.8μm~300μm. When plating and shaping When the object is a wiring, it is usually 0.8μm~50μm, and when the plated molded object is an electrode, it is 1μm~300μm.

抗蝕劑圖案的形狀根據鍍敷造形物的於電路基板中的應用零件的種類,選擇與其相符的形狀。 The shape of the resist pattern is selected in accordance with the type of application part of the plating molded article in the circuit board.

例如,當應用零件為配線時,抗蝕劑圖案的形狀為線與空間圖案(line and space pattern),當應用零件為凸塊時,抗蝕劑圖案的形狀為立方體形狀的孔圖案(hole pattern)。 For example, when the applied part is a wiring, the shape of the resist pattern is a line and space pattern, and when the applied part is a bump, the shape of the resist pattern is a cube-shaped hole pattern. ).

<3-4>步驟(4) <3-4>Step (4)

步驟(4)中,將步驟(3)中所形成的抗蝕劑圖案作為遮罩並進行鍍敷液處理,製造鍍敷造形物。 In step (4), the resist pattern formed in step (3) is used as a mask and a plating liquid treatment is performed to produce a plated shaped object.

即,將抗蝕劑圖案作為鑄模,對由抗蝕劑圖案所形成的開口部進行鍍敷液處理,藉此形成鍍敷造形物。 That is, the resist pattern is used as a mold, and the opening formed by the resist pattern is treated with a plating solution to form a plated molded object.

所述鍍敷液處理通常為電解鍍敷液處理。作為電解鍍敷液處理的籽晶(seed)層,通常使用位於基板表面的含銅膜,亦可將藉由無電解鍍敷液處理而形成於抗蝕劑圖案的內壁的鍍敷膜用作籽晶層。亦可於形成籽晶層之前形成阻擋層,可將籽晶層用作阻擋層。 The plating solution treatment is usually an electrolytic plating solution treatment. As the seed layer for electrolytic plating solution treatment, a copper-containing film located on the surface of the substrate is usually used. A plating film formed on the inner wall of the resist pattern by electroless plating solution treatment may also be used. As a seed layer. The barrier layer may also be formed before forming the seed layer, and the seed layer may be used as a barrier layer.

於進行鍍敷液處理之前,為了提高抗蝕劑圖案的內壁與鍍敷液的親和性,且為了去除含銅膜的氧化膜、及為了去除抗蝕劑圖案的開口部的污物,例如可進行灰化(ashing)處理、助焊劑(flux)處理、及除膠渣(desmear)處理。 Before performing the plating solution treatment, in order to improve the affinity between the inner wall of the resist pattern and the plating solution, to remove the oxide film of the copper-containing film, and to remove dirt from the opening of the resist pattern, for example It can perform ashing treatment, flux treatment, and desmear treatment.

於抗蝕劑圖案的開口部的底部存在藉由本發明的表面 處理劑而形成的三唑化合物(A)的表面處理層,於鍍敷液處理之前,所述表面處理層可去除,亦可不去除,兩者均可。所述表面處理層極薄,因此不會妨礙鍍敷液處理,故可不去除表面處理層地進行鍍敷液處理。 There is a surface formed by the present invention at the bottom of the opening of the resist pattern The surface treatment layer of the triazole compound (A) formed by using a treatment agent can be removed or not removed before treatment with the plating solution, either way is acceptable. The surface treatment layer is extremely thin and does not interfere with the plating solution treatment. Therefore, the plating solution treatment can be performed without removing the surface treatment layer.

作為鍍敷液處理,例如可列舉:銅鍍敷液處理、錫鍍敷液處理、錫-銀鍍敷液處理、焊料鍍敷液處理、金鍍敷液處理、鎳鍍敷液處理、鎳-金鍍敷液處理及鉻鍍敷液處理。 Examples of the plating solution treatment include copper plating solution treatment, tin plating solution treatment, tin-silver plating solution treatment, solder plating solution treatment, gold plating solution treatment, nickel plating solution treatment, nickel- Gold plating solution treatment and chromium plating solution treatment.

作為所述銅鍍敷液處理,例如可列舉使用了包含硫酸銅或焦磷酸銅等的鍍敷浴的鍍敷液處理;作為所述金鍍敷液處理,例如可列舉使用了包含氰化金鉀的鍍敷浴的鍍敷液處理;作為所述鎳鍍敷液處理,例如可列舉使用了包含硫酸鎳或碳酸鎳的鍍敷浴的鍍敷液處理。 Examples of the copper plating solution treatment include a plating solution treatment using a plating bath containing copper sulfate, copper pyrophosphate, etc.; examples of the gold plating solution treatment include a plating solution treatment using a plating bath containing gold cyanide. Plating solution treatment using a potassium plating bath; Examples of the nickel plating solution treatment include plating solution treatment using a plating bath containing nickel sulfate or nickel carbonate.

所述電解鍍敷液處理的條件只要根據鍍敷液的組成適宜選擇即可,例如,當為包含硫酸銅的鍍敷液時,其條件通常為溫度10℃~90℃、電流密度0.1A/dm2~100A/dm2The conditions for the electrolytic plating solution treatment can be appropriately selected according to the composition of the plating solution. For example, when it is a plating solution containing copper sulfate, the conditions are usually a temperature of 10°C to 90°C and a current density of 0.1A/ dm 2 ~100A/dm 2 .

鍍敷液處理可依次進行不同的鍍敷液處理。例如,首先進行銅鍍敷液處理後,進行鎳鍍敷液處理,藉此可形成焊料銅柱凸塊的銅柱。 Plating solution treatment Different plating solution treatments can be performed sequentially. For example, by first performing a copper plating solution treatment and then performing a nickel plating solution treatment, the copper pillars of the solder copper pillar bumps can be formed.

<3-5>步驟(5) <3-5>Step (5)

步驟(5)中,於進行步驟(4)的鍍敷液處理後,進而去除抗蝕劑圖案。 In step (5), after performing the plating solution treatment in step (4), the resist pattern is further removed.

抗蝕劑圖案的去除例如可列舉將步驟(4)之後的基板 浸漬於抗蝕劑剝離液中的方法。作為所述抗蝕劑剝離液,例如可使用包含四甲基銨等鹼性物質的有機溶液。 Examples of the removal of the resist pattern include removing the substrate after step (4) Method of immersing in resist stripper. As the resist stripping liquid, for example, an organic solution containing an alkaline substance such as tetramethylammonium can be used.

去除抗蝕劑圖案後,可藉由濕式蝕刻等來將形成有鍍敷造形物的區域以外的含銅膜去除。 After the resist pattern is removed, the copper-containing film other than the area where the plated molding is formed can be removed by wet etching or the like.

如以上所示般,藉由至少步驟(1)~步驟(4),可製造符合配線或凸塊等目的的鍍敷造形物,可製造無因鍍敷液滲入抗蝕劑圖案與基板之間所致的形狀不良,具有良好的形狀的鍍敷造形物。 As shown above, by at least steps (1) to (4), it is possible to produce a plated molded object suitable for purposes such as wiring or bumping, and it is possible to make a plated product without the plating liquid penetrating between the resist pattern and the substrate. The resulting shape is a plated molded article with good shape.

<4>電路基板 <4>Circuit substrate

本發明的電路基板具有藉由本發明的鍍敷造形物的製造方法而製造的鍍敷造形物。 The circuit board of the present invention has a plated molded article produced by the method of producing a plated molded article of the present invention.

藉由本發明的鍍敷造形物的製造方法而製造的鍍敷造形物於電路基板整個面,無因鍍敷液滲入抗蝕劑圖案與基板之間所致的形狀不良,具有良好形狀,故不存在相鄰的配線或凸塊間的短路,因此為可靠性高的電路基板。 The plated molded article manufactured by the method of manufacturing a plated molded article of the present invention has no shape defects caused by the penetration of the plating liquid between the resist pattern and the substrate on the entire surface of the circuit substrate, and has a good shape. Since there is no short circuit between adjacent wirings or bumps, it is a highly reliable circuit board.

作為電路基板,為具有包括配線或凸塊的電路基板者,具體而言可列舉半導體裝置、顯示裝置、及產業用裝置等。 The circuit board is a circuit board including wiring or bumps, and specific examples thereof include semiconductor devices, display devices, industrial devices, and the like.

[實施例] [Example]

以下,基於實施例來對本發明進一步進行具體說明,但本發明並不限定於該些實施例。 Hereinafter, the present invention will be further described in detail based on examples, but the present invention is not limited to these examples.

[實施例1A~實施例4A、比較例1A~比較例3A]表面處理劑1A~表面處理劑7A的製造 [Example 1A to Example 4A, Comparative Example 1A to Comparative Example 3A] Production of Surface Treatment Agent 1A to Surface Treatment Agent 7A

藉由將下述表1中所示的成分以下述表1中所示的含有比例均勻地混合,而製造表面處理劑1A~表面處理劑7A。 Surface treatment agents 1A to 7A were manufactured by uniformly mixing the components shown in Table 1 below at the content ratios shown in Table 1 below.

Figure 108123081-A0305-02-0021-1
Figure 108123081-A0305-02-0021-1

[實驗例1A]表面處理基板1A的形成及接觸角的測定 [Experimental Example 1A] Formation of surface-treated substrate 1A and measurement of contact angle

將表面處理劑1A旋塗(表面處理劑1A的載置量:5cc、最高轉數:1,000rpm、時間:0.5分鐘)於在表面具有銅箔(厚度:3000Å)的12吋矽晶圓上,利用加熱板於90℃下加熱1分鐘,形成表面處理基板1A。 Spin-coat surface treatment agent 1A (loading amount of surface treatment agent 1A: 5cc, maximum rotation speed: 1,000rpm, time: 0.5 minutes) on a 12-inch silicon wafer with copper foil (thickness: 3000Å) on the surface. The surface-treated substrate 1A was formed by heating at 90° C. for 1 minute using a hot plate.

依據「日本工業標準(Japanese Industrial Standards,JIS)R 3257、1999」規格,對表面處理基板1A的12吋矽晶圓的中心(位置1)、距離中心4吋的周緣側的位置(位置2)、及距離中心8吋的周緣的位置(位置3)此三點處的水的接觸角進行測定。將評價結果示於下述表2中。 According to the "Japanese Industrial Standards (JIS) R 3257, 1999" specification, the center (position 1) of the 12-inch silicon wafer of the surface-treated substrate 1A and the position on the peripheral side 4 inches from the center (position 2) The contact angles of water at these three points are measured: , and the position of the periphery 8 inches from the center (position 3). The evaluation results are shown in Table 2 below.

[實驗例2A~實驗例7A]表面處理基板2A~表面處理基板7A的形成及接觸角的測定 [Experimental Examples 2A to 7A] Formation of surface-treated substrates 2A to 7A and measurement of contact angles

於實驗例1A中使用下述表2中所示的表面處理劑,除此以外,藉由與實驗例1A相同的操作而製造表面處理基板2A~表面處理基板7A,並測定其接觸角。將評價結果示於下述表2中。 In Experimental Example 1A, except for using the surface treatment agent shown in the following Table 2, surface-treated substrates 2A to 7A were manufactured by the same operation as Experimental Example 1A, and their contact angles were measured. The evaluation results are shown in Table 2 below.

[實驗例8A]表面處理基板1A的形成及接觸角的測定 [Experimental Example 8A] Formation of surface-treated substrate 1A and measurement of contact angle

將表面處理劑1A狹縫塗佈(狹縫噴嘴:70μm間隙(GAP)、表面處理劑1A的噴出速度:0.1cc/秒、移動速度:2cm/秒)於在表面具有銅箔(厚度:3000Å)的玻璃環氧基板(尺寸:縱50cm、橫40cm)上,利用加熱板於90℃下加熱1分鐘,形成表面處理基板8A。 Surface treatment agent 1A is slit-coated (slit nozzle: 70 μm gap (GAP), ejection speed of surface treatment agent 1A: 0.1cc/second, moving speed: 2cm/second) on a surface with copper foil (thickness: 3000Å) ) on a glass epoxy substrate (size: 50 cm in length, 40 cm in width), and heated at 90° C. for 1 minute using a hot plate to form surface-treated substrate 8A.

依據「JISR 3257、1999」規格,對表面處理基板8A的 玻璃環氧基板的中心(位置1)、距離中心10cm的縱向上的周緣側的位置(位置2)、及距離中心10cm的橫向上的周緣的位置(位置3)此三點處的水的接觸角進行測定。將評價結果示於下述表2中。 According to the "JISR 3257, 1999" standard, the surface treatment substrate 8A Water contact at three points: the center of the glass epoxy substrate (position 1), the position on the peripheral edge 10 cm from the center in the longitudinal direction (position 2), and the position on the peripheral edge 10 cm from the center in the transverse direction (position 3) Angle is measured. The evaluation results are shown in Table 2 below.

Figure 108123081-A0305-02-0024-2
Figure 108123081-A0305-02-0024-2

[實施例1B]抗蝕劑圖案的形成及鍍敷造形物的製造 [Example 1B] Formation of resist pattern and production of plated molded article

將負型抗蝕劑組成物(商品名「THB-151N」、JSR(股)製造、含有鹼可溶性樹脂、丙烯酸化合物、及光自由基聚合起始劑的抗蝕劑組成物)旋塗於表面處理基板1A上,利用加熱板於120℃下加熱300秒,形成抗蝕劑組成物的塗膜。使用步進機(stepper)(尼康(Nikon)公司製造、型號「NSR-i10D」),介隔圖案遮罩對抗蝕劑組成物的塗膜進行曝光,且於2.38質量%的四甲基氫氧化銨水溶液中浸漬200秒進行顯影,形成抗蝕劑圖案(縱20μm、橫20μm、深度50μm的孔圖案)。 A negative resist composition (trade name "THB-151N", manufactured by JSR Co., Ltd., a resist composition containing an alkali-soluble resin, an acrylic compound, and a photoradical polymerization initiator) is spin-coated on the surface. The treatment substrate 1A was heated at 120° C. for 300 seconds using a hot plate to form a coating film of the resist composition. Using a stepper (model "NSR-i10D" manufactured by Nikon Corporation), the coating film of the resist composition was exposed through a pattern mask, and oxidized to 2.38 mass% tetramethylhydrogen. It was immersed in an aqueous ammonium solution for 200 seconds and developed to form a resist pattern (a hole pattern of 20 μm in length, 20 μm in width, and 50 μm in depth).

利用電子顯微鏡觀察所述位置1處的所述抗蝕劑圖案的底部(bottom)的狀態,以下述評價基準進行評價。將評價結果示於下述表3中。 The state of the bottom of the resist pattern at the position 1 was observed with an electron microscope and evaluated based on the following evaluation criteria. The evaluation results are shown in Table 3 below.

A:抗蝕劑圖案無底切。 A: The resist pattern has no undercut.

B:抗蝕劑圖案有底切。 B: The resist pattern has undercut.

另外,將實施例1B中形成的抗蝕劑圖案的電子顯微鏡照片示於圖2中。 In addition, an electron micrograph of the resist pattern formed in Example 1B is shown in FIG. 2 .

將所述抗蝕劑圖案作為遮罩,藉由下述方法來進行電解鍍敷處理,製造鍍敷造形物。作為鍍敷的前處理,藉由氧電漿來進行灰化處理(輸出100W、氧流量100毫升、處理時間60秒),其後,進行硫酸處理(接觸10質量%的硫酸水溶液60秒),繼而進行水洗。將前處理後的基板浸漬於1L的銅鍍敷液(製品名「麥庫洛法波(MICROFAB)SC-40」、樂思(Enthone)公司製造)中, 設定為鍍敷浴溫度40℃、電流密度2A/dm2,進行15分鐘電解鍍敷處理,製造鍍敷造形物。 Using the resist pattern as a mask, an electrolytic plating process is performed by the following method to produce a plated molded article. As a pretreatment for plating, ashing treatment was performed by oxygen plasma (output 100W, oxygen flow rate 100 ml, treatment time 60 seconds), and then sulfuric acid treatment was performed (contact with 10 mass% sulfuric acid aqueous solution for 60 seconds). Then wash with water. The pretreated substrate was immersed in 1 L of copper plating solution (product name "MICROFAB SC-40", manufactured by Enthone Co., Ltd.), and the plating bath temperature was set to 40°C. Electrolytic plating was performed at a current density of 2A/dm 2 for 15 minutes to produce a plated molded article.

利用光學顯微鏡觀察所述鍍敷造形物的製造後的所述抗蝕劑圖案與表面處理基板1A的界面狀態(有無鍍敷液滲入),以下述評價基準進行評價。將評價結果示於下述表3中。 The interface state of the resist pattern and the surface-treated substrate 1A after the production of the plated shaped article (whether the plating liquid penetrated or not) was observed with an optical microscope, and evaluated based on the following evaluation criteria. The evaluation results are shown in Table 3 below.

A:無鍍敷液的滲入。 A: No penetration of plating solution.

B:有鍍敷液的滲入。 B: There is penetration of plating liquid.

[實施例2B~實施例4B、比較例1B~比較例4B]抗蝕劑圖案的形成及鍍敷造形物的製造 [Example 2B to Example 4B, Comparative Example 1B to Comparative Example 4B] Formation of resist pattern and production of plated molded article

於實施例1B中使用下述表3中所示的表面處理基板,除此以外,藉由與實施例1B相同的操作而形成抗蝕劑圖案,製造鍍敷造形物,並進行與實施例1B同樣的評價。將評價結果示於下述表3中。 In Example 1B, the surface-treated substrate shown in the following Table 3 was used. Except for this, a resist pattern was formed by the same operation as in Example 1B, a plated molded article was produced, and the same process as in Example 1B was performed. Same rating. The evaluation results are shown in Table 3 below.

再者,比較例4B中使用未藉由表面處理劑進行表面處理且於表面具有銅箔(厚度:3000Å)的12吋矽晶圓作為基板。 Furthermore, in Comparative Example 4B, a 12-inch silicon wafer that was not surface-treated with a surface treatment agent and had copper foil (thickness: 3000Å) on the surface was used as the substrate.

將比較例4B中形成的抗蝕劑圖案的電子顯微鏡照片示於圖3中。 An electron micrograph of the resist pattern formed in Comparative Example 4B is shown in FIG. 3 .

[實施例5B]抗蝕劑圖案的形成及鍍敷造形物的製造 [Example 5B] Formation of resist pattern and production of plated molded article

將負型抗蝕劑組成物(商品名「THB-151N」、JSR(股)製造、含有鹼可溶性樹脂、丙烯酸化合物、及光自由基聚合起始劑的抗蝕劑組成物)狹縫塗佈於表面處理基板8A上,利用加熱板於120 ℃下加熱300秒,形成抗蝕劑組成物的塗膜。使用對準機(aligner)(蘇斯微技術(Suss Microtech)公司製造、型號「MA150」),介隔圖案遮罩對抗蝕劑組成物的塗膜進行曝光,且於2.38質量%的四甲基氫氧化銨水溶液中浸漬200秒進行顯影,形成抗蝕劑圖案(縱20μm、橫20μm、深度50μm的孔圖案)。 A negative resist composition (trade name "THB-151N", manufactured by JSR Co., Ltd., a resist composition containing an alkali-soluble resin, an acrylic compound, and a photoradical polymerization initiator) is slit-coated On the surface treatment substrate 8A, use a heating plate at 120 Heating for 300 seconds at ℃ to form a coating film of the resist composition. Using an aligner (manufactured by Suss Microtech, model "MA150"), the coating film of the resist composition was exposed through a pattern mask, and exposed to 2.38 mass % tetramethyl It was immersed in an aqueous ammonium hydroxide solution for 200 seconds and developed to form a resist pattern (a hole pattern of 20 μm in length, 20 μm in width, and 50 μm in depth).

與實施例1B同樣地對所述抗蝕劑圖案進行評價,製造鍍敷造形物,並進行與實施例1B同樣的評價。將評價結果示於下述表3中。 The resist pattern was evaluated in the same manner as in Example 1B, a plated molded article was produced, and the same evaluation as in Example 1B was performed. The evaluation results are shown in Table 3 below.

[實施例6B]抗蝕劑圖案的形成及鍍敷造形物的製造 [Example 6B] Formation of resist pattern and production of plated molded article

將正型抗蝕劑組成物(商品名「THB-820P」、JSR(股)製造、含有酸解離性鹼難溶性樹脂及光酸產生劑的抗蝕劑組成物)旋塗於表面處理基板1A上,利用加熱板於120℃下加熱300秒,形成抗蝕劑組成物的塗膜。使用步進機(stepper)(尼康(Nikon)公司製造、型號「NSR-i10D」),介隔圖案遮罩對抗蝕劑組成物的塗膜進行曝光,並利用加熱板於110℃下加熱300秒,且於2.38質量%的四甲基氫氧化銨水溶液中浸漬300秒進行顯影,形成抗蝕劑圖案(縱20μm、橫20μm、深度50μm的孔圖案)。 A positive resist composition (trade name "THB-820P", manufactured by JSR Co., Ltd., a resist composition containing an acid-dissociating alkali-insoluble resin and a photoacid generator) is spin-coated on the surface-treated substrate 1A on a hot plate at 120° C. for 300 seconds to form a coating film of the resist composition. Using a stepper (model "NSR-i10D" manufactured by Nikon Corporation), the coating film of the resist composition was exposed through a pattern mask, and heated at 110° C. for 300 seconds using a hot plate. , and immersed in a 2.38 mass% tetramethylammonium hydroxide aqueous solution for 300 seconds and developed to form a resist pattern (a hole pattern of 20 μm in length, 20 μm in width, and 50 μm in depth).

與實施例1B同樣地對所述抗蝕劑圖案進行評價,製造鍍敷造形物,並進行與實施例1B同樣的評價。將評價結果示於下述表3中。 The resist pattern was evaluated in the same manner as in Example 1B, a plated molded article was produced, and the same evaluation as in Example 1B was performed. The evaluation results are shown in Table 3 below.

[比較例5B]抗蝕劑圖案的形成及鍍敷造形物的製造 [Comparative Example 5B] Formation of resist pattern and production of plated molded article

於實施例6B中使用未藉由表面處理劑進行表面處理且於表 面具有銅箔(厚度:3000Å)的12吋矽晶圓作為基板,除此以外,藉由與實施例6B相同的操作而形成抗蝕劑圖案,製造鍍敷造形物,並進行與實施例1B同樣的評價。將評價結果示於下述表3中。 In Example 6B, no surface treatment by surface treatment agent was used and the surface A 12-inch silicon wafer with a copper foil (thickness: 3000Å) was used as the substrate. Except for this, a resist pattern was formed by the same operation as in Example 6B, and a plated molded article was produced, and the same process as in Example 1B was performed. Same rating. The evaluation results are shown in Table 3 below.

[實施例7B]抗蝕劑圖案的形成及鍍敷造形物的製造 [Example 7B] Formation of resist pattern and production of plated molded article

於實施例1B中形成高度30μm、間距20μm的1L/1S的線與空間圖案作為抗蝕劑圖案,除此以外,進行與實施例1B同樣的評價。將評價結果示於下述表3中。 In Example 1B, the same evaluation as in Example 1B was performed except that a 1L/1S line and space pattern with a height of 30 μm and a pitch of 20 μm was formed as a resist pattern. The evaluation results are shown in Table 3 below.

下述表3中的表示抗蝕劑組成物的用語及表示抗蝕劑圖案形狀的文字的意思如下。 The terms representing the resist composition and the characters representing the shape of the resist pattern in Table 3 below have the following meanings.

‧抗蝕劑組成物 ‧Resist composition

負:商品名「THB-151N」、JSP(股)製造、含有鹼可溶性樹脂、丙烯酸化合物、及光自由基聚合起始劑的抗蝕劑組成物。 Negative: A resist composition with a trade name of "THB-151N", manufactured by JSP Co., Ltd., containing an alkali-soluble resin, an acrylic compound, and a photoradical polymerization initiator.

正:商品名「THB-820P」、JSP(股)製造、含有酸解離性鹼難溶性樹脂及光酸產生劑的抗蝕劑組成物。 Positive: Trade name "THB-820P", manufactured by JSP Co., Ltd., a resist composition containing an acid-dissociating alkali-insoluble resin and a photoacid generator.

‧抗蝕劑圖案形狀 ‧Resist pattern shape

A:縱20μm、橫20μm、深度50μm的孔圖案。 A: Hole pattern of 20 μm in length, 20 μm in width, and 50 μm in depth.

B:高度30μm、間距20μm的1L/1S的線與空間圖案。 B: 1L/1S line and space pattern with a height of 30 μm and a pitch of 20 μm.

Figure 108123081-A0305-02-0029-3
Figure 108123081-A0305-02-0029-3

Claims (9)

一種鍍敷造形物的製造方法,其特徵在於包括:步驟(1),將表面處理劑暴露於在表面具有含銅膜的基板上,形成表面處理基板,藉此疏水性的表面處理層形成於抗蝕劑圖案與含銅基板的接觸面,所述表面處理劑含有0.001質量%~2質量%的選自三唑(A1)、非取代的苯并三唑及將苯并三唑的苯環的1個~4個氫原子取代為烷基、烷基取代的環烷基、芳基、芳烷基或含鹵素的烴基的化合物中的至少一種三唑化合物(A)及90質量%~99.999質量%的有機溶劑(B);步驟(2),於所述表面處理基板上形成抗蝕劑組成物的塗膜;步驟(3),對所述塗膜進行曝光及顯影,形成抗蝕劑圖案;以及步驟(4),將所述抗蝕劑圖案作為遮罩來進行鍍敷液處理。 A method for manufacturing a plated shaped object, which is characterized by including: step (1), exposing a surface treatment agent to a substrate with a copper-containing film on the surface to form a surface treatment substrate, whereby a hydrophobic surface treatment layer is formed on The contact surface between the resist pattern and the copper-containing substrate, the surface treatment agent contains 0.001 mass% to 2 mass% selected from the group consisting of triazole (A1), unsubstituted benzotriazole and the benzene ring of benzotriazole At least one triazole compound (A) and 90 mass % to 99.999 of compounds in which 1 to 4 hydrogen atoms are substituted with alkyl groups, alkyl-substituted cycloalkyl groups, aryl groups, aralkyl groups or halogen-containing hydrocarbon groups Mass % organic solvent (B); step (2), forming a coating film of the resist composition on the surface treatment substrate; step (3), exposing and developing the coating film to form a resist pattern; and step (4), using the resist pattern as a mask to perform plating solution treatment. 如申請專利範圍第1項所述的鍍敷造形物的製造方法,其中所述抗蝕劑組成物含有鹼可溶性樹脂、丙烯酸化合物、及光自由基聚合起始劑。 The method for manufacturing a plated shaped object according to claim 1, wherein the resist composition contains an alkali-soluble resin, an acrylic compound, and a photoradical polymerization initiator. 如申請專利範圍第1項所述的鍍敷造形物的製造方法,其中所述抗蝕劑組成物含有酸解離性鹼難溶性樹脂及光酸產生劑。 The method for manufacturing a plated shaped object according to claim 1, wherein the resist composition contains an acid-dissociating alkali-insoluble resin and a photoacid generator. 如申請專利範圍第1項至第3項中任一項所述的鍍敷造形物的製造方法,其中所述抗蝕劑圖案的膜厚為0.8μm~300μm。 The method for manufacturing a plated shaped object as described in any one of items 1 to 3 of the patent application, wherein the film thickness of the resist pattern is 0.8 μm ~ 300 μm. 如申請專利範圍第1項至第3項中任一項所述的鍍敷造形物的製造方法,於所述步驟(4)之後進一步包括步驟(5),將 所述抗蝕劑圖案去除。 The method for manufacturing a plated shaped object as described in any one of items 1 to 3 of the patent application further includes step (5) after the step (4). The resist pattern is removed. 如申請專利範圍第1項至第3項中任一項所述的鍍敷造形物的製造方法,其中所述表面處理劑含有0.001質量%~2質量%的三唑化合物(A)及98質量%~99.999質量%的有機溶劑(B)。 The method for manufacturing a plated shaped object as described in any one of items 1 to 3 of the patent application, wherein the surface treatment agent contains 0.001 mass% to 2 mass% of triazole compound (A) and 98 mass% %~99.999% by mass of organic solvent (B). 如申請專利範圍第1項至第3項中任一項所述的鍍敷造形物的製造方法,其中所述有機溶劑(B)為烷二醇單烷基醚乙酸酯、或醇。 The method for manufacturing a plated shaped article as described in any one of items 1 to 3 of the patent application, wherein the organic solvent (B) is alkylene glycol monoalkyl ether acetate or alcohol. 如申請專利範圍第1項至第3項中任一項所述的鍍敷造形物的製造方法,其中所述有機溶劑(B)的標準沸點為80℃~200℃。 The method for manufacturing a plated shaped object as described in any one of items 1 to 3 of the patent application, wherein the standard boiling point of the organic solvent (B) is 80°C to 200°C. 一種電路基板,包括藉由如申請專利範圍第1項至第8項中任一項所述的鍍敷造形物的製造方法而製造的鍍敷造形物。 A circuit substrate includes a plated molded article manufactured by the method for manufacturing a plated molded article described in any one of items 1 to 8 of the patent application.
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